CN115250626A - 触觉反馈基板、触觉反馈装置及触觉反馈方法 - Google Patents

触觉反馈基板、触觉反馈装置及触觉反馈方法 Download PDF

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Publication number
CN115250626A
CN115250626A CN202180000340.2A CN202180000340A CN115250626A CN 115250626 A CN115250626 A CN 115250626A CN 202180000340 A CN202180000340 A CN 202180000340A CN 115250626 A CN115250626 A CN 115250626A
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China
Prior art keywords
electrode
substrate
haptic feedback
electric field
piezoelectric material
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Pending
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CN202180000340.2A
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English (en)
Inventor
花慧
陈右儒
尹晓峰
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BOE Technology Group Co Ltd
Beijing BOE Technology Development Co Ltd
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BOE Technology Group Co Ltd
Beijing BOE Technology Development Co Ltd
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Publication of CN115250626A publication Critical patent/CN115250626A/zh
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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/016—Input arrangements with force or tactile feedback as computer generated output to the user
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
    • B06B1/0607—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using multiple elements
    • B06B1/0622—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using multiple elements on one surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
    • H10N30/302—Sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/877—Conductive materials
    • H10N30/878—Conductive materials the principal material being non-metallic, e.g. oxide or carbon based
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/04—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning
    • H10N30/045—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning by polarising
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8548—Lead based oxides
    • H10N30/8554—Lead zirconium titanate based
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals
    • H10N30/875—Further connection or lead arrangements, e.g. flexible wiring boards, terminal pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/88—Mounts; Supports; Enclosures; Casings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/88—Mounts; Supports; Enclosures; Casings
    • H10N30/883—Further insulation means against electrical, physical or chemical damage, e.g. protective coatings

Abstract

本申请提供了一种触觉反馈基板、触觉反馈装置及触觉反馈方法，其中，触觉反馈基板包括：衬底以及设置在衬底一侧的形变单元，形变单元包括层叠设置的第一电极、压电材料层以及第二电极，第一电极靠近衬底设置，第一电极与第二电极用于形成交变电场，压电材料层用于在交变电场的作用下发生振动，并驱动衬底发生共振；其中，交变电场的频率与衬底的固有频率之差小于或等于预设阈值。本申请技术方案，通过向第一电极和第二电极分别施加电压信号，在第一电极与第二电极之间形成交变电场，压电材料层在交变电场的作用下发生形变，当交变电场的频率接近或等于衬底的固有频率时，可以驱动衬底发生共振，振幅增强，从而在衬底表面实现触觉反馈。

Description

PCT国内申请，说明书已公开。

Claims (15)

  1. PCT国内申请，权利要求书已公开。
CN202180000340.2A 2021-02-26 2021-02-26 触觉反馈基板、触觉反馈装置及触觉反馈方法 Pending CN115250626A (zh)

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PCT/CN2021/078073 WO2022178807A1 (zh) 2021-02-26 2021-02-26 触觉反馈基板、触觉反馈装置及触觉反馈方法

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CN115250626A true CN115250626A (zh) 2022-10-28

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CN202180000340.2A Pending CN115250626A (zh) 2021-02-26 2021-02-26 触觉反馈基板、触觉反馈装置及触觉反馈方法
CN202180003572.3A Pending CN115250640A (zh) 2021-02-26 2021-11-25 压电传感器及触觉反馈装置

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CN202180003572.3A Pending CN115250640A (zh) 2021-02-26 2021-11-25 压电传感器及触觉反馈装置

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US (1) US11847263B2 (zh)
EP (1) EP4163986A4 (zh)
CN (2) CN115250626A (zh)
WO (2) WO2022178807A1 (zh)

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Publication number Priority date Publication date Assignee Title
WO2024082255A1 (zh) * 2022-10-21 2024-04-25 京东方科技集团股份有限公司 一种触觉反馈基板及触觉反馈装置

Citations (6)

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CN101632054A (zh) * 2007-02-12 2010-01-20 里尔科学技术大学 振动触觉界面
US20110043477A1 (en) * 2009-08-21 2011-02-24 Samsung Electro-Mechanics Co., Ltd. Touch feedback panel, and touch screen device and electronic device inluding the same
US20180150164A1 (en) * 2016-11-30 2018-05-31 Japan Display Inc. Display device with input function
CN108846318A (zh) * 2018-05-24 2018-11-20 业成科技（成都）有限公司 超声波指纹识别装置及其制作方法以及应用其的电子装置
CN109240485A (zh) * 2018-05-28 2019-01-18 厦门大学 一种纹理触觉再现装置、显示装置与弧度再现装置
CN111749874A (zh) * 2019-03-29 2020-10-09 研能科技股份有限公司 微机电泵

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JP3798287B2 (ja) * 2001-10-10 2006-07-19 Ｓｍｋ株式会社 タッチパネル入力装置
JP5398315B2 (ja) 2009-03-13 2014-01-29 富士フイルム株式会社 圧電素子及びその製造方法並びにインクジェットヘッド
JP2013161587A (ja) 2012-02-02 2013-08-19 Alps Electric Co Ltd メンブレンスイッチユニットおよびこのメンブレンスイッチユニットを用いたキーボード装置
JP2014197576A (ja) 2013-03-29 2014-10-16 セイコーエプソン株式会社 液体噴射ヘッド、液体噴射装置、圧電素子、超音波トランスデューサー及び超音波デバイス
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CN101632054A (zh) * 2007-02-12 2010-01-20 里尔科学技术大学 振动触觉界面
US20110043477A1 (en) * 2009-08-21 2011-02-24 Samsung Electro-Mechanics Co., Ltd. Touch feedback panel, and touch screen device and electronic device inluding the same
US20180150164A1 (en) * 2016-11-30 2018-05-31 Japan Display Inc. Display device with input function
CN108846318A (zh) * 2018-05-24 2018-11-20 业成科技（成都）有限公司 超声波指纹识别装置及其制作方法以及应用其的电子装置
CN109240485A (zh) * 2018-05-28 2019-01-18 厦门大学 一种纹理触觉再现装置、显示装置与弧度再现装置
CN111749874A (zh) * 2019-03-29 2020-10-09 研能科技股份有限公司 微机电泵

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Publication number Publication date
WO2022179219A1 (zh) 2022-09-01
US11847263B2 (en) 2023-12-19
US20230152892A1 (en) 2023-05-18
EP4163986A4 (en) 2024-02-21
CN115250640A (zh) 2022-10-28
WO2022178807A1 (zh) 2022-09-01
EP4163986A1 (en) 2023-04-12

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