CN115224104A - High-resistance layer epitaxial structure for GaN power device and growth method thereof - Google Patents

High-resistance layer epitaxial structure for GaN power device and growth method thereof Download PDF

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CN115224104A
CN115224104A CN202210598468.XA CN202210598468A CN115224104A CN 115224104 A CN115224104 A CN 115224104A CN 202210598468 A CN202210598468 A CN 202210598468A CN 115224104 A CN115224104 A CN 115224104A
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layer
gan
resistance
epitaxial structure
substrate
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李国强
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Heyuan Choicore Photoelectric Technology Co ltd
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Heyuan Choicore Photoelectric Technology Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT

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  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
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Abstract

The invention discloses a high-resistance layer epitaxial structure for a GaN power device and a growth method thereof, wherein the high-resistance layer epitaxial structure comprises a substrate and a plurality of epitaxial layers, wherein the epitaxial layers are sequentially formed on the substrate from bottom to top: the GaN-based high-resistance layer comprises a nucleation layer, a stress control layer and a high-resistance GaN layer, wherein the high-resistance GaN layer comprises a Fe-doped GaN layer and an autonomous C-doped GaN layer which are periodically alternated, the periodic alternation is similar to a superlattice growth mode, the memory effect caused by Fe source doping is greatly weakened, the influence of the Fe source memory effect on a GaN channel is avoided, meanwhile, the nonuniformity of autonomous C doping can be compensated, and the pressure resistance characteristic of the high-resistance layer is comprehensively ensured. The epitaxial material of the invention makes up the defects of the mainstream high-resistance layer growth method in the prior art under the condition of keeping high-resistance characteristics, and realizes the improvement of the pressure-resistant stability of the material.

Description

High-resistance layer epitaxial structure for GaN power device and growth method thereof
Technical Field
The invention relates to the technical field of epitaxial structures, in particular to a high-resistance layer epitaxial structure for a GaN power device and a growth method thereof.
Background
Gallium nitride (GaN) has high electron saturation velocity, high critical field and high stability, and has strong application potential in high-power and high-frequency electronic devices. In addition, the wide bandgap discontinuity and reduced lattice mismatch between GaN and its ternary alloy AlGaN makes it possible to form a high quality AlGaN/GaN heterointerface that can confine an exceptionally high density of electron gas (2 DEG) in a two-dimensional range over the gallium nitride surface. MOCVD grown AlGaN/GaN heterostructures in several conventional growth methods exhibit higher electron gas mobility for 2DEG, with the mobility of heterojunction 2DEG grown on sapphire substrates at room temperature typically being about 1000-1200cm2/Vs, and the mobility of heterojunction grown on SiC substrates being 2000cm2/Vs.
In addition to 2DEG, one of the key links for realizing high-quality GaN power devices is to grow a thick high-resistance gallium nitride layer. The high resistance gallium nitride layer must be thick enough, typically > 1um, and any significant defects in the thick gallium nitride layer will result in leakage sources from the drain and degrade the radio frequency performance of the device. The doping sources used for the growth of the mainstream high-resistance GaN at present are an Fe source and a C source, and the deep-level acceptor can be introduced by effective doping, so that the high-resistance state is realized. But has the following disadvantages: the Fe source has a memory effect and can affect a channel layer of the device so as to deteriorate the characteristics of the device; the C source requires additional cost and is difficult to control uniformity.
Disclosure of Invention
In order to overcome the defects of the prior art, one of the purposes of the invention is to provide a high-resistance layer epitaxial structure for a GaN power device, wherein the high-resistance GaN layer comprises a Fe-doped GaN layer and an autonomous C-doped GaN layer which are periodically alternated; the periodically alternating growth mode can avoid the influence of Fe source memory effect on the GaN channel, compensate the nonuniformity of autonomous C doping and comprehensively ensure the voltage resistance of the high-resistance layer; the invention also aims to provide a growth method for the high-resistance epitaxial structure of the GaN power device, which greatly improves the insulation property of the epitaxial high-resistance layer material through pulse type doping and self-doping modes, provides a high-quality platform for the high voltage resistance of the subsequent GaN power device, and greatly improves the power property of the device.
One of the purposes of the invention is realized by adopting the following technical scheme:
a high-resistance layer epitaxial structure for a GaN power device comprises a substrate and is formed on the substrate from bottom to top in sequence: the GaN-based high-resistance GaN layer comprises a nucleating layer, a stress control layer and a high-resistance GaN layer, wherein the high-resistance GaN layer comprises a Fe-doped GaN layer and an autonomous C-doped GaN layer which are periodically alternated.
Further, the combination method of the Fe-doped GaN layer and the self-contained C-doped GaN layer is a superlattice or C-doped GaN layer/Fe-doped GaN layer alternate stack, preferably an alternate stack of more than two layers.
Still further, the substrate is a combined layer structure of one or more than two of a sapphire substrate, a sapphire AlN thin film substrate, a GaN substrate, a silicon substrate and a silicon carbide substrate.
Further, the thickness of the nucleating layer is 15-1000 nm, and the nucleating layer is in a combined layer structure of one or more than two of a GaN layer, an AlGaN layer, an InAlGaN layer and an InGan layer.
Furthermore, the thickness of the stress control layer is 15-1000 nm, and the stress control layer is in a combined layer structure of one or more than two of a GaN layer, an AlGaN layer, an InAlGaN layer and an InGan layer.
Further, the thickness of the Fe-doped GaN layer is 150-500 nm; the thickness of the self-contained C-doped GaN layer is 200-500 nm.
The second purpose of the invention is realized by adopting the following technical scheme:
the growth method for the high-resistance layer epitaxial structure of the GaN power device comprises the following steps:
1) Growing a nucleation layer on a substrate;
2) Growing a stress control layer on the nucleation layer;
3) And growing a high-resistance GaN layer on the stress control layer, wherein the high-resistance GaN layer comprises a Fe-doped GaN layer and an autonomous C-doped GaN layer which are periodically alternated, so as to obtain an epitaxial structure.
Further, in the step 1), the growth temperature of the nucleation layer is 450-1150 ℃; in the step 2), the growth temperature of the stress control layer is 450-1150 ℃.
Further, in the step 3), the growth temperature of the high-resistance GaN layer is 1000-1200 ℃, and the growth thickness is 2-4 μm.
Further, in the step 3), the doping concentration of the Fe-doped GaN layer is 5 × 10 18 ～1×10 20 cm -3 (ii) a Doping concentration of the self-contained C-doped GaN layerIs 5 x 10 18 ～1×10 20 cm -3 。
Compared with the prior art, the invention has the beneficial effects that:
(1) The invention provides a high-resistance epitaxial structure for a GaN power device, which can effectively improve the voltage-resistant characteristic of materials, and the epitaxial structure is formed by the following steps: the high-resistance GaN layer comprises a Fe-doped GaN layer and an autonomous C-doped GaN layer which are periodically alternated; the periodic alternation growth mode similar to a superlattice greatly weakens the memory effect caused by Fe source doping, avoids the influence of the Fe source memory effect on a GaN channel, and simultaneously can compensate the nonuniformity of autonomous C doping, and the thickness of the material can be improved due to the periodic alternation mode, so that the voltage resistance characteristic of the high-resistance layer is comprehensively ensured. The epitaxial material of the invention makes up the defects of the mainstream high-resistance layer growth method in the prior art under the condition of keeping high-resistance characteristics, and realizes the improvement of the pressure-resistant stability of the material.
(2) According to the growth method of the epitaxial structure, the core, the stress control layer and the high-resistance GaN layer are sequentially grown on the substrate from bottom to top, wherein the high-resistance GaN layer grows the periodically alternating Fe-doped GaN layer and the self-doping GaN layer in a pulse-type doping and self-doping mode, so that the insulation characteristic of the epitaxial high-resistance layer material is greatly improved, a high-quality platform is provided for the high withstand voltage of a subsequent GaN power device, the leakage of current caused by material defects is effectively avoided, the withstand voltage capability of the material is obviously improved, and the power characteristic of the device is greatly improved.
Drawings
Fig. 1 is a schematic view of an epitaxial structure of example 1;
FIG. 2 is a schematic view of an epitaxial structure of example 2;
FIG. 3 is a schematic view of an epitaxial structure of example 3;
FIG. 4 is a graph showing the vertical withstand voltage characteristics of the high barrier material of example 1;
in the figure: 1. a substrate; 2. a nucleation layer; 3. a stress control layer; 4. a high-resistance GaN layer; 41. a Fe-doped GaN layer; 42. and doping the GaN layer with the autonomous C.
Detailed Description
The present invention will be further described with reference to the accompanying drawings and the detailed description, and it should be noted that any combination of the embodiments or technical features described below can be used to form a new embodiment without conflict.
Example 1
A high-resistance epitaxial structure for GaN power devices, as shown in FIG. 1, comprises a substrate 1, and sequentially formed on the substrate 1 from bottom to top: the structure comprises a nucleating layer 2, a stress control layer 3 and a high-resistance GaN layer 4, wherein the high-resistance GaN layer 4 comprises two layers of Fe-doped GaN layers 41 and self-contained C-doped GaN layers 42 which are periodically and alternately stacked.
Wherein the substrate 1 is a GaN substrate 1. The thickness of the nucleation layer 2 is 100nm, and the nucleation layer 2 is of a GaN/AlGaN combined layer structure. The thickness of the stress control layer 3 is 500nm, and the stress control layer 3 is of an InAlGaN/InGan combined layer structure. The thickness of each Fe-doped GaN layer 41 is 250nm; each of the layers of the autonomous C-doped GaN layer 42 has a thickness of 250nm.
Specifically, the above-mentioned growth method for the high-resistance layer epitaxial structure of the GaN power device includes the following steps:
1) Growing a nucleation layer 2 on a substrate 1 at a growth temperature of 650 ℃;
2) Growing a stress control layer 3 on the nucleation layer 2 at a growth temperature of 550 ℃;
3) And growing a high-resistance GaN layer 4 on the stress control layer 3 at the growth temperature of 1200 ℃, wherein the high-resistance GaN layer 4 comprises two layers of Fe-doped GaN layers 41 and self-contained C-doped GaN layers 42 which are alternated, so as to obtain an epitaxial structure.
Wherein, in the step 3), the doping concentration of each Fe-doped GaN layer 41 is 1 × 10 19 (ii) a The doping concentration of each of the autonomous C-doped GaN layers 42 is 1X 10 19 cm -3 。
Example 2
A high-resistance epitaxial structure for GaN power devices, as shown in FIG. 2, comprises a substrate 1, and sequentially formed on the substrate 1 from bottom to top: the high-resistance GaN layer 4 comprises a nucleation layer 2, a stress control layer 3 and a high-resistance GaN layer 4, wherein the high-resistance GaN layer 4 comprises a layer of Fe-doped GaN layer 41 and an autonomous C-doped GaN layer 42 which are periodically and alternately stacked.
Wherein, the substrate 1 is a silicon substrate 1. The thickness of the nucleating layer 2 is 150nm, and the nucleating layer 2 is a GaN layer. The thickness of the stress control layer 3 is 650nm, and the stress control layer 3 is of a combined layer structure of AlGaN/InAlGaN. The thickness of the Fe-doped GaN layer 41 is 300nm; the thickness of the autonomous C-doped GaN layer 42 is 400nm.
Specifically, the above-mentioned growth method for the high-resistance layer epitaxial structure of the GaN power device includes the following steps:
1) Growing a nucleation layer 2 on a substrate 1 at a growth temperature of 1150 ℃;
2) Growing a stress control layer 3 on the nucleation layer 2 at a growth temperature of 1150 ℃;
3) And growing a high-resistance GaN layer 4 on the stress control layer 3 at a growth temperature of 1200 ℃, wherein the high-resistance GaN layer 4 comprises periodically and alternately Fe-doped GaN layers 41 and self-contained C-doped GaN layers 42 to obtain an epitaxial structure.
Wherein, in the step 3), the doping concentration of the Fe-doped GaN layer 41 is 1 × 10 20 cm -3 (ii) a The doping concentration of the self-contained C-doped GaN layer 42 is 1 × 10 20 cm -3 。
Example 3
A high-resistance epitaxial structure for GaN power devices, as shown in FIG. 3, comprises a substrate 1, and sequentially formed on the substrate 1 from bottom to top: the high-resistance GaN layer 4 comprises three layers of Fe-doped GaN layers 41 and an autonomous C-doped GaN layer 42 which are periodically and alternately stacked.
Wherein the substrate 1 is a GaN substrate 1. The thickness of the nucleation layer 2 is 60nm, and the nucleation layer 2 is a combined layer structure of GaN/InGan. The thickness of the stress control layer 3 is 650nm, and the stress control layer 3 is of a combined layer structure of AlGaN/InAlGaN. The thickness of the Fe-doped GaN layer 41 is 150nm; the thickness of the self-C-doped GaN layer 42 is 200nm.
Specifically, the above-mentioned growth method for the high-resistance layer epitaxial structure of the GaN power device includes the following steps:
1) Growing a nucleation layer 2 on a substrate 1 at a growth temperature of 450 ℃;
2) Growing a stress control layer 3 on the nucleation layer 2 at a growth temperature of 450 ℃;
3) And growing a high-resistance GaN layer 4 on the stress control layer 3 at a growth temperature of 1000 ℃, wherein the high-resistance GaN layer 4 comprises periodically and alternately Fe-doped GaN layers 41 and self-contained C-doped GaN layers 42 to obtain an epitaxial structure.
Wherein, in the step 3), the doping concentration of each Fe-doped GaN layer 41 is 5 × 10 18 cm -3 (ii) a The doping concentration of each of the autonomous C-doped GaN layers 42 is 5X 10 18 cm -3 。
Comparative example 1
Comparative example 1 differs from example 1 in that: the high-resistance GaN layer 4 of comparative example 1 includes only the Fe-doped GaN layer 41. The remaining layer structure and growth method were the same as in example 1.
Comparative example 2
Comparative example 2 differs from example 1 in that: the high-resistance GaN layer 4 of comparative example 2 includes only the autonomous C-doped GaN layer 42. The remaining layer structure and growth method were the same as in example 1.
Performance testing
Preparation of epitaxial Structure of example 1 the epitaxial layer surface and the substrate were prepared to be 1X 1cm each 2 The metal electrode of (1) detects the vertical withstand voltage characteristic of the device material according to the standard of the gallium nitride epitaxial wafer test of the semiconductor power analyzer, and as can be seen from fig. 4, the epitaxial structure of example 1 comprehensively ensures the withstand voltage characteristic of the high resistance layer.
The above embodiments are only preferred embodiments of the present invention, and the protection scope of the present invention is not limited thereby, and any insubstantial changes and substitutions made by those skilled in the art based on the present invention are within the protection scope of the present invention.

Claims (10)

1. The utility model provides a be used for high resistant layer epitaxial structure of GaN power device which characterized in that, includes the substrate to and form on the substrate from the bottom up in proper order: the GaN-based high-resistance GaN layer comprises a nucleating layer, a stress control layer and a high-resistance GaN layer, wherein the high-resistance GaN layer comprises a Fe-doped GaN layer and an autonomous C-doped GaN layer which are periodically alternated.
2. The high resistance layer epitaxial structure for GaN power devices of claim 1, wherein the Fe doped GaN layer and the autonomous C doped GaN layer are combined by superlattice or C doped GaN layer/Fe doped GaN layer alternate stacking.
3. The high resistance layer epitaxial structure for GaN power devices of claim 1, wherein the substrate is a combined layer structure of one or more of a sapphire substrate, a sapphire AlN thin film substrate, a GaN substrate, a silicon substrate and a silicon carbide substrate.
4. The high-resistance layer epitaxial structure for GaN power devices as claimed in claim 1, wherein the thickness of the nucleation layer is 15-1000 nm, and the nucleation layer is a combined layer structure of one or more of GaN layer, alGaN layer, inAlGaN layer and InGan layer.
5. The high resistance layer epitaxial structure for GaN power devices of claim 1, wherein the thickness of the stress control layer is 15-1000 nm, and the stress control layer is a combined layer structure of one or more of GaN layer, alGaN layer, inAlGaN layer and InGan layer.
6. The high resistance layer epitaxial structure for GaN power devices of claim 1, wherein the thickness of the Fe-doped GaN layer is 150-500 nm; the thickness of the self-contained C-doped GaN layer is 200-500 nm.
7. The growth method of the high-resistance layer epitaxial structure for the GaN power device, as recited in any of claims 1 to 6, is characterized by comprising the following steps:
1) Growing a nucleation layer on a substrate;
2) Growing a stress control layer on the nucleation layer;
3) And growing a high-resistance GaN layer on the stress control layer, wherein the high-resistance GaN layer comprises a Fe-doped GaN layer and an autonomous C-doped GaN layer which are periodically alternated, so as to obtain an epitaxial structure.
8. The growth method for the high-resistance layer epitaxial structure of the GaN power device as claimed in claim 7, wherein in the step 1), the growth temperature of the nucleation layer is 450-1150 ℃; in the step 2), the growth temperature of the stress control layer is 450-1150 ℃.
9. The growth method of the epitaxial structure of the high resistance layer for the GaN power device of claim 7, wherein in the step 3), the growth temperature of the high resistance GaN layer is 1000 to 1200 ℃ and the growth thickness is 2 to 4 μm.
10. The growth method for the high-resistance epitaxial structure of GaN power device of claim 7, wherein in the step 3), the doping concentration of the Fe-doped GaN layer is 5 x 10 18 ～1×10 20 cm -3 (ii) a The doping concentration of the self-contained C-doped GaN layer is 5 multiplied by 10 18 ～1×10 20 cm -3 。
CN202210598468.XA 2022-05-30 2022-05-30 High-resistance layer epitaxial structure for GaN power device and growth method thereof Pending CN115224104A (en)

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