CN115220158A - Photoelectric conversion module based on lithium niobate optical chip - Google Patents
Photoelectric conversion module based on lithium niobate optical chip Download PDFInfo
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- CN115220158A CN115220158A CN202210631662.3A CN202210631662A CN115220158A CN 115220158 A CN115220158 A CN 115220158A CN 202210631662 A CN202210631662 A CN 202210631662A CN 115220158 A CN115220158 A CN 115220158A
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12002—Three-dimensional structures
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4206—Optical features
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- G—PHYSICS
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4266—Thermal aspects, temperature control or temperature monitoring
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/1204—Lithium niobate (LiNbO3)
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12085—Integrated
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optical Couplings Of Light Guides (AREA)
Abstract
The invention relates to a photoelectric conversion module based on a lithium niobate optical chip, and belongs to the technical field of optical communication. According to the lithium niobate optical chip-based photoelectric conversion module provided by the invention, the module comprises the lithium niobate optical chip, and the optical unit and the electric module which are respectively coupled with the lithium niobate optical chip, and because the lithium niobate optical chip is used for photoelectric conversion in the invention and a semiconductor optical amplifier is not needed, the power consumption and the cost are reduced, and the circuit is simplified.
Description
Technical Field
The invention belongs to the technical field of optical communication, and particularly relates to a lithium niobate optical chip-based photoelectric conversion module.
Background
The traditional single-channel 40KM 100G photoelectric conversion module needs an additional Semiconductor Optical Amplifier (SOA) and is used for improving the transmitting optical power of the system, so that the corresponding circuit function becomes complex, the power consumption is high, and the cost is very high.
The above information disclosed in this background is only for background understanding of the inventive concept and therefore may contain information that does not constitute prior art.
Disclosure of Invention
The present invention has been made to solve the above problems, and an object of the present invention is to provide a photoelectric conversion module based on a lithium niobate optical chip.
The inventor of the invention finds that in the future 6G wireless network market, the current wavelength division multiplexing device is smoothly transited from a 25G CWDM optical module to a 100G CWDM/DWDM optical module, but the traditional 100G single-wavelength optical module does not appear in the market at present. Therefore, the invention provides a 100G single-wavelength lithium niobate optical chip-based photoelectric conversion module which is developed based on an LNOI (lithium niobate) process, can be used for developing communication modulators with different wavelengths, forming different series of 100G series optical modules with different single wavelengths, and can make up for the blank of the current market.
The invention provides a photoelectric conversion module based on a lithium niobate optical chip, which comprises:
a lithium niobate optical chip;
an optical unit coupled to the lithium niobate optical chip; and
an electrical module coupled to the lithium niobate optical chip.
The invention provides a lithium niobate optical chip-based photoelectric conversion module, wherein an optical unit comprises an optical fiber array or a grating.
The invention provides a lithium niobate optical chip-based photoelectric conversion module, wherein the photoelectric conversion module comprises a digital signal processing unit.
The invention provides a lithium niobate optical chip-based photoelectric conversion module, wherein the lithium niobate optical chip sequentially comprises a substrate, a silicon dioxide layer, a lithium niobate waveguide layer and an electrode from bottom to top.
The invention provides a lithium niobate optical chip-based photoelectric conversion module, wherein a substrate comprises a silicon material or a quartz material.
The invention provides a photoelectric conversion module based on a lithium niobate optical chip, wherein a temperature control unit is arranged between the lithium niobate optical chip and an electric module.
The invention provides a photoelectric conversion module based on a lithium niobate optical chip, wherein an optical unit is arranged above the lithium niobate optical chip.
The invention provides a lithium niobate optical chip-based photoelectric conversion module, wherein an optical unit is coupled with the end face of the lithium niobate optical chip.
The invention provides a lithium niobate optical chip-based photoelectric conversion module, wherein an optical unit comprises an optical fiber array, and one end of the optical fiber array is provided with at least one inclined surface, so that light is transmitted into a lithium niobate optical chip from the optical fiber array through the inclined surface.
The invention provides a photoelectric conversion module based on a lithium niobate optical chip, wherein the lithium niobate optical chip is fixedly connected with an optical fiber array.
Action and Effect of the invention
According to the photoelectric conversion module based on the lithium niobate optical chip provided by the embodiment, the module comprises the lithium niobate optical chip, and the optical unit and the electric module which are respectively coupled with the lithium niobate optical chip.
Drawings
Fig. 1 is a schematic structural diagram of a lithium niobate optical chip-based photoelectric conversion module according to an embodiment of the present invention;
fig. 2 is a block diagram of a structure of a lithium niobate optical chip-based photoelectric conversion module according to an embodiment of the present invention;
fig. 3 is a schematic signal conversion diagram of a lithium niobate optical chip-based photoelectric conversion module according to an embodiment of the present invention;
FIG. 4 is a schematic cross-sectional view of a lithium niobate optical chip of an embodiment of the present invention;
fig. 5 is a block diagram of a light unit according to an embodiment of the present invention.
Detailed Description
In order to make the technical means, the creation features, the achievement purposes and the effects of the present invention easy to understand, the following describes the photoelectric conversion module based on the lithium niobate optical chip provided by the present invention in detail with reference to the embodiments and the accompanying drawings.
< example >
Fig. 1 is a schematic structural diagram of a lithium niobate optical chip-based photoelectric conversion module according to an embodiment of the present invention, fig. 2 is a block structural diagram of a lithium niobate optical chip-based photoelectric conversion module according to an embodiment of the present invention, and referring to fig. 1 and fig. 2, a lithium niobate optical chip-based photoelectric conversion module 100 provided in this embodiment includes a lithium niobate optical chip 1, an optical unit 2, an electrical module 3, and a temperature control unit 4. The electric module 3 is arranged on the substrate 11 of the lithium niobate optical chip 1 and coupled with the lithium niobate optical chip 1, and the optical unit 2 is arranged on the lithium niobate optical chip 1 and coupled with the lithium niobate optical chip 1.
Referring to fig. 3, the signal conversion of the lithium niobate optical chip-based photoelectric conversion module 100 provided in this embodiment is described as follows:
the electric signal in the electric module 3 is modulated by the lithium niobate optical chip 1 and is converted and output into an optical signal after entering the optical unit 2; on the contrary, the optical signal in the optical unit 2 is modulated by the lithium niobate optical chip 1, and the electrical signal is output after passing through the electrical module 3.
Referring to fig. 4, the lithium niobate optical chip 1 in this embodiment sequentially includes, from bottom to top, a substrate 11, a silicon dioxide layer 12, a lithium niobate waveguide layer 13, and an electrode 14.
Specifically, the substrate 11 in the present embodiment is a silicon material, and in other embodiments, the substrate 11 may also be a quartz material or a silicon nitride material, and the electrical module 3 is disposed on the substrate 11. The silicon dioxide layer 12 is a buffer layer and is disposed on the substrate 11. The lithium niobate waveguide layer 13 is a modulator layer and is disposed on the silicon dioxide layer 12. The number of the electrodes 14 is two, the electrodes are respectively arranged at two ends of the lithium niobate waveguide layer 13, the electrodes are made of gold, and the silicon dioxide cladding layer 12 is coated above the lithium niobate waveguide layer 13 and the electrodes 14. In this embodiment, the lithium niobate waveguide layer 13 is used for providing modulation, loading and coupling of signals. In this embodiment, the lithium niobate optical chip 1 is a modulator, and in other embodiments, the lithium niobate optical chip 1 may also be used for beam splitting by a beam splitter.
Referring to fig. 1 and 2, the electrical module 3 in the present embodiment is disposed on the substrate 11 of the lithium niobate optical chip 1, and the electrical module 3 includes a metal shell 31, an amplifying unit 32, a digital signal processing unit 33, and a control unit 34.
A metal case 31 is provided on the substrate 11, and the amplifying unit 32 is enclosed inside the metal case 31. The digital signal processing unit 33 is a 9nm DSP chip, the bias current of the DSP chip is less than 3A, the power consumption is less than 10W, the current loss of the DSP chip to the modulation circuit is not more than 75mA, the thermal performance of the module can be improved, and the instruction of the EEPROM can be executed. The control unit 34 is used for controlling the operation of the DSP chip.
Referring to fig. 2, the temperature control unit 4 is made of TEC, and is disposed between the lithium niobate optical chip 1 and the electrical module 3 for adjusting the temperature therebetween, so as to keep the temperature constant. The temperature control unit 4 is provided in this embodiment, and in other embodiments, the temperature control unit 4 may not be provided.
Referring to fig. 2 and 5, the optical unit 2 is coupled to the lithium niobate optical chip 1, and the optical unit 2 includes a light emitting unit 21, a light coupling unit 22, and a light receiving unit 23.
The light emitting unit 21 includes a dc laser 211 and a splitter 212. Specifically, the parameters of the splitter 212 in the present embodiment are not limited to 1 minute or more. The dc laser 211 is configured to emit laser light, and split the laser light by the splitter 212 to obtain a plurality of split signals.
The optical coupling unit 22 is bonded with the light emitting unit 21 through epoxy glue, and the optical coupling unit 22 comprises an FA optical fiber array 221 and a spot size converter 222.
Referring to fig. 1, an fa fiber array 221 (monocrystailine silicon fiber array) is disposed above the lithium niobate optical chip 1 and is fixedly connected to the lithium niobate optical chip 1. One end of the FA fiber array 221 has at least one inclined surface, so that light is transmitted from the FA fiber array 221 into the lithium niobate optical chip 1 via the inclined surface. The FA fiber array 221 may also be end-coupled to the lithium niobate optical chip 1.
Specifically, the FA fiber array 221 includes a glass cover plate and a multi-core single-mode fiber, and a groove for accommodating the multi-core single-mode fiber is provided on the substrate 11, and the groove may be a V-shaped groove or a U-shaped groove. The glass cover plate is arranged on the multi-core single-mode optical fiber, and the glass cover plate, the multi-core single-mode optical fiber and the substrate 11 are fixed through the adhesive. The substrate 11 and the FA fiber array 221 are subjected to UV, baking, TC aging, 8-degree angle polishing, testing, and the like.
The thickness of the adhesive layer between the glass cover plate and the substrate 11 can be controlled by manually adjusting the two-dimensional adjusting balance shaft, so that the adhesive layer is uniformly distributed. The alignment mode of the glass cover plate and the end face of the substrate 11 is controlled by the sawtooth-shaped alignment platform of the clamp, so that the loading stability of the substrate 11 is improved, the coupling area is increased, the coupling difficulty is simplified, and the damage to the substrate 11 caused by the coupling with a small area is avoided. The two-dimensional adjusting balance shaft in the embodiment is a passive optical device coupling fine adjustment shaft in the prior art.
The substrate 11 is bonded and cured to the interlayer to perform an 8 degree angle grind, wherein the 8 degree angle grind results in the best return loss and minimal dispersion for the incident light device.
The optical coupling is performed by aligning the FA fiber array 221 with the light receiving unit 23 using a passive coupling six-bit adjusting platform in order to minimize the loss of received light.
The FA fiber array 221 is an 8-degree angle, and when the laser light is transmitted in the FA fiber array 221, the laser light is totally reflected into the light receiving unit 23 through an 8-degree angle end face. Meanwhile, when an optical signal is transmitted through the FA optical fiber array 221 made of g.652 single-mode fiber, the return loss value can reach the maximum, and the total dispersion coefficient can reach a smaller value.
The FA fiber array 221 is polished at an angle of 8 degrees, so that the polishing amount of the substrate 11 can be increased at one time, and the deformation caused in the manufacturing process can be overcome. The 8 degrees angles of accurate positioning can be realized to the mode of lapping, avoids the damage of this chip simultaneously, and its location scope is 8 degrees 0.3 degrees.
The grinding step is divided into a coarse grinding process and a polishing process, wherein the grinding powder in the coarse grinding process adopts substances such as ferric oxide, green silicon carbide, chromium oxide and the like with the powder granularity of 10 nm-10 nm of a lithium niobate optical chip, the Mohs hardness of a split body of 7-9 and the powder crystal form of a sheet, hexagonal cylinder, square, monoclinic, cube and the like. The grits have a certain lattice morphology and form sharp points during crushing. The grinding powder in the polishing process adopts substances such as aluminum oxide, cerium oxide, zirconium oxide and the like with the powder granularity of 5 nm-1 nm of a lithium niobate optical chip, the split Mohs hardness of 5-9, and the powder crystal form of sheet, hexagonal column, square, monoclinic, cube and the like. The polishing powder has proper hardness and density, and has good wettability and suspensibility with water.
The spot size converter 222 is used to connect the lithium niobate optical chip 1 and the FA optical fiber array 221, and reduce optical loss therebetween. One end of the spot size converter 222 has a larger spot size matching that of the standard optical fiber, and the other end has a smaller spot size matching that of the lithium niobate optical waveguide, so that the optical connection loss between the standard optical fiber and the lithium niobate optical waveguide can be significantly reduced.
The light receiving unit 23 and the light coupling unit 22 perform light-to-light and adhesion coupling through a six-dimensional adjusting frame, and the light receiving unit 23 includes a detector 231, specifically a PD detector, which is adhered to the substrate 11 in a wafer bonding manner.
The FA optical fiber array 221 in this embodiment may also be disposed on the side surface of the lithium niobate optical chip 1, and coupled to the end surface of the lithium niobate optical chip 1. The angle of the inclined plane in the FA fiber array 221 in fig. 1 is 45 degrees, and in other embodiments, the optical grating may be coupled to the lithium niobate optical chip 1. Specifically, one end of the grating is coupled to the lithium niobate optical chip 1, and the other end is coupled to the FA fiber array 221 without an inclined plane.
The embodiment also provides a preparation method of the optical fiber coupling device, which comprises the following steps:
step one, arranging an FA optical fiber array 221 on a substrate 11, covering glass cover plates at two ends of the FA optical fiber array 221, and fixing the substrate 11 and the glass cover plates through an adhesive to obtain a substrate-cover plate composite;
and step two, grinding the incident end face and the emergent end face of the substrate-cover plate composite part to obtain a grinding face forming an angle of 8 degrees with the substrate 11. And the grinding in the second step comprises coarse grinding and polishing. The coarse grinding adopts grinding powder grinding, the powder granularity of the grinding powder is 10 nm-10 nm of the lithium niobate optical chip, the split Mohs hardness of the grinding powder is 7-9, and the grinding powder has a lattice form. Polishing with polishing powder of 5 nm-1 nm powder size and 5-9 Mohs hardness.
The present embodiment further provides a coupling method, in which the above-mentioned photoelectric conversion module 100 based on a lithium niobate optical chip includes the following steps:
providing a six-position adjusting platform, wherein the six-position adjusting platform is used for placing and clamping a substrate 11;
and step two, aligning the light emitting unit 21 and the light receiving unit 23 by adjusting the six-position adjusting platform to minimize the loss of received light.
The present embodiment further provides a method for manufacturing an optical transceiver module, where the above-mentioned photoelectric conversion module 100 based on a lithium niobate optical chip includes the following steps:
step one, coupling the light emitting unit 21 and the light receiving unit 23 through the optical coupling unit 22 by using a passive coupling mode to obtain a coupled photoelectric conversion module 100 based on a lithium niobate optical chip;
step two, carrying out optical fiber transmission data test on the coupled photoelectric conversion module 100 based on the lithium niobate optical chip to obtain a qualified product;
and step three, packaging the qualified product.
The working principle of the photoelectric conversion module 100 based on the lithium niobate optical chip in this embodiment is as follows:
the photoelectric conversion module 100 based on the lithium niobate optical chip performs photoelectric and electro-optical conversion, a transmitting end converts an electrical signal into an optical signal, and a receiving end converts the optical signal into the electrical signal after the optical signal is transmitted through an optical fiber.
Compared with the traditional discrete scheme, the scheme integrates optical/electrical chips such as a shunt, a modulator, a multi-channel detector and the like on a silicon optical chip, so that the size is greatly reduced, the material cost, the chip cost and the packaging cost are effectively reduced, and meanwhile, the power consumption can be effectively controlled. By virtue of the advantages, the silicon optical module is expected to get a larger share in application scenes such as data centers, medium and long-distance coherent communication and the like, or the traditional competition pattern is changed.
Effects and effects of the embodiments
Further, under the condition that the package size is the same, because the single-channel rate of the lithium niobate optical chip in the embodiment is 100Gbps, the single-channel 100Gbps signal can be easily transmitted and received, and the rate of the traditional QSFP 28-series module is increased by 4 times.
Further, since the optical transmitter unit in this embodiment has a dc laser combined with an optical splitter of 1*8, the cost is saved by more than 80%, and the competitive advantage of product commercialization is improved.
Further, since the lithium niobate optical chip in the present embodiment only contains 1 LNOI modulator, the cost is saved by more than 50% compared with the conventional technology EML modulator.
Further, in the embodiment, the light receiving unit uses the PD detector and is attached to the substrate in a wafer bonding manner, so that mass commercial processing can be performed, and the problems of poor sensitivity, high processing difficulty and the like of the current PD detector are solved.
Furthermore, in this embodiment, the optical coupling unit uses a passive coupling mode, specifically, the passive coupling mode is to couple the optical transmitting unit and the optical receiving unit with an external signal by using an FA fiber array, and glass cover plates are attached to the input end and the output end of the substrate, so as to grind the end face of the FA fiber array at an angle of 8 degrees, thereby increasing the coupling area and simplifying the coupling difficulty.
Further, the applicable markets of the 100G lithium niobate optical chip-based photoelectric conversion module in the present embodiment include digital market, telecommunication market, and emerging market. The general market is the market with the fastest speed increase of a 100G photoelectric conversion module based on a lithium niobate optical chip, is the first market beyond the telecommunication market at present, and is the mainstream growth point of the future of the photoelectric conversion module industry based on the lithium niobate optical chip; the telecommunication market is the market which is first developed by 100G photoelectric conversion modules based on lithium niobate optical chips, and 5G construction greatly draws the demand of the photoelectric conversion modules based on the lithium niobate optical chips for telecommunication; the 6G construction will greatly drive new requirements of 100G single-wavelength lithium niobate optical chip-based photoelectric conversion modules. The other needs of the 100G single-wavelength lithium niobate optical chip-based photoelectric conversion module are emerging markets including consumer electronics, automatic driving, industrial automation and the like, and the market has the largest future development potential. The downstream applications of the 100G single-wavelength lithium niobate optical chip-based photoelectric conversion module are widely distributed in data centers, 6G base stations and carrying networks, optical fiber access and emerging industries.
As will be appreciated by one skilled in the art, embodiments of the present application may be provided as a method, system, or computer program product. Accordingly, the present application may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, the present application may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, and the like) having computer-usable program code embodied therein.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Various other modifications and alterations will occur to those skilled in the art upon reading the foregoing description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the invention.
Claims (10)
1. A photoelectric conversion module based on a lithium niobate optical chip comprises:
a lithium niobate optical chip;
an optical unit coupled to the lithium niobate optical chip; and
an electrical module coupled to the lithium niobate optical chip.
2. The photoelectric conversion module according to claim 1: wherein the light unit comprises an optical fiber array or a grating.
3. The photoelectric conversion module of claim 1, wherein the electrical module comprises a digital signal processing unit.
4. The photoelectric conversion module of claim 1, wherein the lithium niobate optical chip comprises a substrate, a silicon dioxide layer, a lithium niobate waveguide layer and an electrode in sequence from bottom to top.
5. The photoelectric conversion module according to claim 4, wherein the substrate comprises a silicon material or a quartz material.
6. The photoelectric conversion module according to claim 1, wherein a temperature control unit is provided between the lithium niobate optical chip and the electrical module.
7. The photoelectric conversion module according to claim 1, wherein the optical unit is provided above the lithium niobate optical chip.
8. The photoelectric conversion module according to claim 1, wherein the optical unit is end-coupled to the lithium niobate optical chip.
9. The photoelectric conversion module according to claim 1, wherein the optical unit comprises an optical fiber array having at least one inclined surface at one end thereof, so that light is transmitted from the optical fiber array into the lithium niobate optical chip via the inclined surface.
10. The photoelectric conversion module according to claim 9, wherein the lithium niobate optical chip is fixedly connected to the optical fiber array.
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