CN115207144B - 太阳能电池组件的刻槽填充方法 - Google Patents
太阳能电池组件的刻槽填充方法 Download PDFInfo
- Publication number
- CN115207144B CN115207144B CN202210638995.9A CN202210638995A CN115207144B CN 115207144 B CN115207144 B CN 115207144B CN 202210638995 A CN202210638995 A CN 202210638995A CN 115207144 B CN115207144 B CN 115207144B
- Authority
- CN
- China
- Prior art keywords
- photoresist layer
- solar cell
- negative photoresist
- layer
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 57
- 238000011049 filling Methods 0.000 title claims abstract description 42
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 116
- 230000007547 defect Effects 0.000 claims abstract description 23
- 230000008569 process Effects 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000010521 absorption reaction Methods 0.000 claims abstract description 16
- 239000011521 glass Substances 0.000 claims abstract description 15
- 239000002904 solvent Substances 0.000 claims abstract description 13
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 10
- 239000003504 photosensitizing agent Substances 0.000 claims abstract description 8
- 239000011248 coating agent Substances 0.000 claims abstract description 6
- 238000000576 coating method Methods 0.000 claims abstract description 6
- 238000006243 chemical reaction Methods 0.000 claims description 15
- 238000007605 air drying Methods 0.000 claims description 12
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 238000004132 cross linking Methods 0.000 claims description 7
- 230000005540 biological transmission Effects 0.000 claims description 6
- 238000005286 illumination Methods 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims description 4
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 3
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 3
- 230000008859 change Effects 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 13
- 239000000853 adhesive Substances 0.000 abstract description 5
- 230000001070 adhesive effect Effects 0.000 abstract description 5
- 239000011540 sensing material Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 132
- 239000010408 film Substances 0.000 description 39
- 239000010409 thin film Substances 0.000 description 8
- 238000002360 preparation method Methods 0.000 description 3
- 238000010329 laser etching Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Life Sciences & Earth Sciences (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202210638995.9A CN115207144B (zh) | 2022-06-07 | 2022-06-07 | 太阳能电池组件的刻槽填充方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202210638995.9A CN115207144B (zh) | 2022-06-07 | 2022-06-07 | 太阳能电池组件的刻槽填充方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN115207144A CN115207144A (zh) | 2022-10-18 |
CN115207144B true CN115207144B (zh) | 2023-07-07 |
Family
ID=83576558
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202210638995.9A Active CN115207144B (zh) | 2022-06-07 | 2022-06-07 | 太阳能电池组件的刻槽填充方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN115207144B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114967340A (zh) * | 2021-02-22 | 2022-08-30 | 中国建材国际工程集团有限公司 | 多肽型负性厚膜光刻胶及其制备与使用方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001274447A (ja) * | 2000-03-23 | 2001-10-05 | Kanegafuchi Chem Ind Co Ltd | 集積型薄膜太陽電池の製造方法 |
JP2004228141A (ja) * | 2003-01-20 | 2004-08-12 | Sharp Corp | 薄膜太陽電池およびその製造方法 |
CN101893823A (zh) * | 2009-05-21 | 2010-11-24 | 中芯国际集成电路制造(北京)有限公司 | 避免光刻胶层图形损伤的方法 |
CN103576458A (zh) * | 2012-07-31 | 2014-02-12 | 罗门哈斯电子材料有限公司 | 光刻胶组合物和形成光刻图案的方法 |
-
2022
- 2022-06-07 CN CN202210638995.9A patent/CN115207144B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001274447A (ja) * | 2000-03-23 | 2001-10-05 | Kanegafuchi Chem Ind Co Ltd | 集積型薄膜太陽電池の製造方法 |
JP2004228141A (ja) * | 2003-01-20 | 2004-08-12 | Sharp Corp | 薄膜太陽電池およびその製造方法 |
CN101893823A (zh) * | 2009-05-21 | 2010-11-24 | 中芯国际集成电路制造(北京)有限公司 | 避免光刻胶层图形损伤的方法 |
CN103576458A (zh) * | 2012-07-31 | 2014-02-12 | 罗门哈斯电子材料有限公司 | 光刻胶组合物和形成光刻图案的方法 |
Also Published As
Publication number | Publication date |
---|---|
CN115207144A (zh) | 2022-10-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
IE54443B1 (en) | Photocoltaic devices and manufacture thereof | |
US20070227584A1 (en) | Photovoltaic module and method for manufacturing photovoltaic module | |
CN115207144B (zh) | 太阳能电池组件的刻槽填充方法 | |
JP2009532883A (ja) | 自己整合プロセスを用いて薄膜太陽光発電相互接続部を形成する方法 | |
TW201436273A (zh) | 用於薄太陽電池之模組組合 | |
US20130118548A1 (en) | Apparatus and methods for enhancing photovoltaic efficiency | |
CN114927622A (zh) | 一种钙钛矿电池及其内部串联方法和内部串联结构 | |
JP2001044470A (ja) | 太陽電池および太陽電池の製造方法並びに集光型太陽電池モジュール | |
KR101919482B1 (ko) | 태양 전지 및 태양 전지의 제조 방법 | |
US8633053B2 (en) | Photovoltaic device | |
JP2003298084A (ja) | 太陽電池およびその製造方法 | |
CN117276377A (zh) | 太阳能电池及其制作方法、光伏组件及光伏*** | |
CN116014027B (zh) | 一种铜栅线太阳电池及其制备方法 | |
Kang et al. | Colorful transparent silicon photovoltaics with unprecedented flexibility | |
CN218244272U (zh) | 一种钙钛矿电池及其内部串联结构 | |
EP0060487B1 (en) | Plugged pinhole thin film and method of making same | |
US20120017982A1 (en) | Thin Film Silicon Solar Cell and Manufacturing Method Thereof | |
TW201436276A (zh) | 太陽能電池之封裝方法 | |
JP7282961B1 (ja) | 光電変換素子の検査装置、光電変換素子の製造装置、光電変換素子の製造方法 | |
RU2740862C1 (ru) | Способ изготовления фотоэлектрического концентраторного модуля | |
KR20200038402A (ko) | 전기적 특성이 향상된 태양 전지 및 태양 전지의 제조 방법 | |
KR102489246B1 (ko) | 광기능성 필름을 갖는 실내용 태양전지 및 이를 이용한 사물인터넷 장치 | |
KR101223018B1 (ko) | 태양전지의 선택적 에미터 형성방법 및 선택적 에미터형성장치 | |
TWI759872B (zh) | 太陽能電池之量測裝置 | |
Balaji | Thin Silicon Heterojunction Solar Cells |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20240624 Address after: 518000 5th floor, east block, North Yihai Plaza, Chuangye Road, Nanshan District, Shenzhen City, Guangdong Province Patentee after: Shenzhen Kaisheng Technology Engineering Co.,Ltd. Country or region after: China Patentee after: China Triumph International Engineering Co.,Ltd. Address before: 27th floor, Zhongji building, 2000 Zhongshan North Road, Putuo District, Shanghai Patentee before: China Triumph International Engineering Co.,Ltd. Country or region before: China |
|
TR01 | Transfer of patent right |