CN115173203A - All-optical adjustable plasmon nanometer optical device based on asymmetric super-surface structure and application thereof - Google Patents
All-optical adjustable plasmon nanometer optical device based on asymmetric super-surface structure and application thereof Download PDFInfo
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
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Abstract
The invention provides an asymmetric super-surface structure based all-optical adjustable plasmon nanometer optical device and application thereof. The plasmon nanometer optical device based on the asymmetric super-surface structure realizes high Q-value resonance response by coupling plasmon resonance of the asymmetric metal nanometer structure with a periodic array lattice diffraction mode, and the asymmetric periodic design provides polarization selection resonance response to realize all-optical adjustable output.
Description
Technical Field
The invention relates to the technical field of nano optical devices, in particular to an all-optical adjustable plasmon nano optical device based on an asymmetric super surface structure and application thereof.
Background
With the rapid development of the information age, electronic components are being developed in the direction of high integration, miniaturization, and high frequency, and higher requirements are being made on the financial resources that are the basis of the electronic components. Under the excitation of incident electromagnetic waves, free electrons on the surface of the surface plasmon nanometer structure and the electromagnetic waves interact to form a resonance mode, so that the distribution of a local electromagnetic field on the surface of the nanometer structure is changed, and the regulation and control of photon states on a nanometer scale can be realized. When the frequency of the incident electromagnetic wave is consistent with the free electron frequency of the surface of the nano structure, the local electromagnetic field can be greatly enhanced in the surface optical near-field range. The strong field localization property of plasmon resonance makes it possible for the optics size to break through the optical diffraction limit. The nano optical device is a micro-nano device which takes nano materials such as nano wires and the like as a resonant cavity and can emit laser under the excitation of light or electricity. Different from the traditional semiconductor micro-nano optical device, the plasmon nano optical device utilizes a plasmon resonance mode to replace cavity mode oscillation in the semiconductor optical device, and the subwavelength property of plasmon resonance enables the plasmon nano optical device to have extremely small mode volume. Therefore, the physical size of the optical device can be reduced to nanometer level, thereby effectively reducing the lasing threshold and power consumption. In addition, due to the high local state density of the plasmons, the plasmons nanometer optical device can realize ultra-fast modulation speed while realizing sub-wavelength physical size and extremely small lasing threshold, and the application prospect of the micro-nano optical device in the fields of high-speed optical communication and optical calculation is further expanded.
At present, plasmon nanometer optical devices based on metal nanometer structures/gain material core-shell structures, semiconductor nanometer structure media/metal film hybrid waveguide structures, and metal/media/metal structures have been realized. However, the existing plasmon nanometer laser still has the problems of large directional divergence, radiation loss and the like in the structural design.
In order to realize radiation loss suppression and lasing direction control, in recent years, plasmon resonance units are arranged in a two-dimensional plane, and emitted laser is highly localized in a direction perpendicular to an array plane by utilizing the homodromous oscillation of a local mode in a periodic structure. Compared with the plasmon resonance of an independent structure, the arrayed structure can utilize the radiation coupling effect between adjacent units, realize effective regulation and control of the lasing direction and greatly inhibit radiation loss, and the quality factor of the array structure is increased by at least one order of magnitude compared with the plasmon resonance of the independent structure. In addition, the periodic array plasmon design has a good modulation effect on laser, and the laser performance can be obviously influenced by the changes of the period, the size, the shape and the like of the unit structure.
In the existing metal nano-structure array device, a symmetrical medium environment is preferred, and single-wavelength resonance output irrelevant to a polarization state is realized, but once the symmetrical array device is processed, the performance of the symmetrical array device is fixed and cannot be regulated, so that the application of the symmetrical array device in the fields of intelligent control, optical dynamic encryption and the like is limited.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provides a plasmon nanometer optical device based on an asymmetric super surface structure.
In order to achieve the purpose, the technical scheme adopted by the invention for solving the technical problem is as follows:
a plasmon nanometer optical device based on an asymmetric super surface structure is characterized in that: the metal super-surface array layer is a metal nano structure distributed in an asymmetric rectangular periodic array, wherein the period Px of the rectangular periodic array in the x direction and the period Py of the rectangular periodic array in the y direction are not equal, the metal nano structure is in a composite shape formed by a coaxial four-corner star and a square, a luminescent gain material is spin-coated on the metal super-surface array layer to serve as the gain medium layer, and plasmon resonance of the asymmetric metal nano structure is coupled with a periodic array lattice diffraction mode, so that high-Q-value resonance response is realized.
While adopting the technical scheme, the invention can also adopt or combine the following technical scheme:
as a preferred technical scheme of the invention: siO selected for the transparent substrate layer 2 The material is quartz glass, sapphire, organic glass or polydimethylsiloxane.
As a preferred technical scheme of the invention: the middle layer metal structure material is aluminum which is cheaper than common noble metal materials such as gold and silver, and the high body plasma element resonance frequency and the narrow interband transition distance enable the working range of the device to realize full coverage of ultraviolet to near-infrared wave bands.
As a preferred technical scheme of the invention: the gain medium layer is in a liquid or solid state, the refractive index of the gain medium layer is different from that of the transparent substrate layer by delta n, delta n is less than 0.1, and a periodic lattice diffraction mode generated by a periodic structure in a refractive index matching environment is coupled with a metal structure plasmon resonance mode to realize a laser resonant cavity with higher Q. The luminous half-peak width of the selected gain medium is less than 50nm, and the length deviation of the luminous wavelength of the gain medium relative to the length of the period of the asymmetric super-surface structure in the x direction multiplied by the refractive index of the gain material is less than 30nm, so that plasmon resonance wavelength and gain material quantum emission coupling during polarization excitation in the x direction are realized.
As a preferred technical scheme of the invention: the period of the asymmetric super-surface structure is 200 nm-600 nm, and the structural response can be controlled to change from ultraviolet to near-infrared wave bands by using the length change; in a composite structure formed by the coaxial four-corner star and the square, the maximum diagonal length of the four-corner star is 1/6-1/3 of the period Px, the included angle between the diagonal of the coaxial square and the diagonal of the four-corner star is 45 degrees, the side length of the square is 1/2-3/4 of the length of the diagonal of the four-corner star, and the wavelength position of a periodic lattice diffraction mode is translated to the long side direction of a plasmon resonance peak by controlling the relative length of the metal nanostructure and the array period, so that the radiation loss is reduced, and the resonance Q value is increased. By designing the four-corner star-shaped and square composite resonance structure with smaller inner angles, a 'needle point effect' is formed at the edge of the resonance structure, the local field amplification effect is further enhanced, and the size of the square structure is used for controlling the plasmon resonance wavelength position of the composite structure and optimizing the resonance Q value.
As a preferred technical scheme of the invention: the periods of the metal super-surface array layer along the x direction and the y direction are different, and the difference value is 40 nm-100 nm. When the polarization of the excitation light is incident along the x direction, the plasmon resonance wavelength is superposed with the quantum emission waveband of the gain material to generate laser output; when the laser is incident along the y direction, the plasmon resonance wavelength is not overlapped with the quantum emission waveband of the gain material, the laser output is stopped, and the full-light regulation and control laser output in a polarization state is realized.
The second purpose of the present invention is to provide an application of a plasmon nanometer optical device based on an asymmetric super surface structure, aiming at the defects of the prior art.
In order to achieve the purpose, the technical scheme adopted by the invention for solving the technical problem is as follows:
the plasmon nanometer optical device based on the asymmetric super-surface structure is applied to a nanometer laser.
The invention has the beneficial effects that: according to the plasmon nanometer optical device based on the asymmetric super-surface structure and the application thereof, the asymmetric periodic super-surface structure is used as a laser resonant cavity to be coupled with a gain material, so that the regulation and control of the intensity and wavelength of emergent laser light by using the polarization state of incident light are successfully realized; the arrayed super-surface metal nanoparticles can integrate the highly localized electromagnetic resonance characteristic of nano metal and the narrow-bandwidth lattice diffraction characteristic of an array structure, the nano metal can be used as a high-quality nanoscale resonant cavity to generate low-threshold laser output after being coupled with a gain material, the coaxial metal nanostructure in the shape of a four-corner star-shaped and square periodic array strengthens the resonance needle point effect, the local field amplification effect is enhanced, the asymmetric super-surface array resonance characteristic is highly sensitive to an incident polarization state, and the full-optical regulation and control of the emergent laser wavelength by using the polarization state can be realized through the periodic change in the setting surface; the invention has simple structure, can realize the laser output of other wave bands through the size ratio transformation, and has good application prospect in the fields of nano lasers and the like.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a top view of a metal super surface array layer;
FIG. 3 is a graph of the change in the transmission spectrum of the device when the size of the asymmetric metal nanostructure is changed;
FIG. 4 is a diagram of the variation of the transmission optical skin of the device when the asymmetric metal nanostructure is periodically changed;
FIG. 5 shows the output spectral characteristics of the device under different power pumping;
FIG. 6 is a transmission spectrum of the device when the polarization directions of x and y are asymmetric and the incident light is polarized along the x and y directions respectively;
FIG. 7 shows the measurement results of the output spectral characteristics of the pump laser incident with x-polarization and y-polarization, respectively;
in the attached drawing, a silicon dioxide transparent substrate layer 1, a metal aluminum super-surface array layer 2 and a cesium lead rust perovskite nanocrystalline gain medium layer 3 are provided.
Detailed Description
The invention is described in further detail below with reference to the accompanying drawings:
as shown in fig. 1, the plasmon nanometer optical device based on the asymmetric super-surface structure of the invention comprises a silicon dioxide transparent substrate layer 1, a metal super-surface array layer 2, and a cesium lead rust perovskite nanocrystalline gain medium layer 3 from bottom to top, wherein the metal super-surface array layer 2 is deposited on the transparent substrate layer 1, the metal super-surface array layer 2 comprises a plurality of asymmetric metal nanometer structures 201, and each asymmetric metal nanometer structure 201 is distributed in a rectangular periodic array.
The asymmetric metal nano structure is in a composite shape formed by coaxial four-corner stars and squares, the metal super-surface array layer 2 is coated with cesium lead rust perovskite nano crystals in a spinning mode to serve as a gain medium layer, and the corresponding central luminescence is 520nm. The thicknesses of the transparent substrate layer and the gain medium layer are larger than 1 μm so as to exclude the influence of equivalent refractive index change caused by thickness change. The difference between the refractive index of the cesium lead rust perovskite nano-crystalline film near a luminescence waveband and the refractive index of the silicon dioxide substrate is 0.04, and a periodic structure can generate a periodic lattice diffraction mode in a refractive index matching environment. The maximum diagonal length d of the four-corner star in the metal structure is 1/6-1/3 of the period Px, and the wavelength position of the periodic lattice diffraction mode is translated to the long side direction of the plasmon resonance peak to generate mode coupling by controlling the proportional relation between the maximum resonance length of the metal nano structure and the array period, so that the radiation loss is reduced, and the high-Q laser resonant cavity is realized. The included angle between the coaxial square diagonal and the four-corner star diagonal is 45 degrees, a 'needle point effect' is formed at the edge of the resonance structure by designing a four-corner star and square composite resonance structure with a small inner angle, the local field amplification effect is further enhanced, the side length of the square is 1/2-3/4 of the length of the four-corner star diagonal, and the size of the square structure is used for controlling the plasmon resonance waveform and the wavelength position of the composite structure and optimizing the resonance Q value.
The invention relates to a plasmon nanometer optical device based on an asymmetric super surface structure, namely SiO 2 As a transparent substrate material, depositing a periodic asymmetric metal nano-structure array on the substrate material, and spin-coating a cesium lead rust perovskite nano-crystal film on the array structure as a luminescent gain material.
In the technical scheme, plasmon resonance of the metal nano structure is coupled with a periodic array lattice diffraction mode, so that high-Q resonance response is realized.
As shown in fig. 2, a top view of the metal super surface array layer, wherein the period of the array structure along the x and y directions is px =350nm and py =390nm, respectively, the maximum length of four corner stars of the asymmetric metal nanostructure is 80nm, the internal angle is 10 °, and the side length of the square is 60nm. In order to ensure that the polarization state is utilized to realize the all-optical regulation effect of laser output, the deviation between the y-direction plasmon resonance wavelength position and the x-direction plasmon resonance wavelength position exceeds the fluorescence emission wavelength range of the cesium lead rust perovskite nanocrystal, and according to the lattice diffraction theory, when the x-y period difference is greater than 40nm, the corresponding coupling resonance mode wavelength difference is 60nm, so that the y-direction resonance has no gain effect on the laser output when the x-direction resonance is coupled with the light emitting waveband of the gain material. Meanwhile, in order to avoid efficiency reduction caused by reduction of a metal resonance absorption section when the period difference is overlarge, the period difference of x and y is less than 100nm in design.
Fig. 3 shows a graph of the change of the x-direction transmission spectrum when the size of the metal structure is changed at a period px =350nm in the plane of the rectangular periodic array, and it can be seen that as the size of the metal structure is reduced, that is, the farther the particle local surface plasmon resonance wavelength position is from the periodic lattice diffraction rayleigh anomaly position, the sharper the resonance peak is exhibited.
Fig. 4 shows the variation of the transmission spectrum of the device corresponding to the polarization direction when the rectangular period is varied. Along with the increase of the period, the Rayleigh abnormal position of periodic lattice diffraction is red-shifted, the hybrid coupling and the mode of the local surface plasmon resonance are also red-shifted, and due to the principle of the peak position of the local plasmon resonance, the radiation loss is reduced, and the Q value of the resonance peak is increased.
Fig. 5 shows the spectral response of the device at different pump powers, and as the pump power increases, the device shows obvious threshold effect as can be seen from the log-log graph of the pump power-emergent light intensity of the insets, which proves that the structure can realize the output of the low-threshold nanometer laser.
Fig. 6 shows different transmission spectrograms of incident light incident along the x-polarization state and the y-polarization state when the periods are not equal to each other in the x direction and the y direction, and a fluorescence spectrogram of the cesium lead rust perovskite nanocrystal serving as a gain material, and it can be seen that the resonance peak position is near 520nm when the y-polarization state is incident, and the resonance peak position is just overlapped with the quantum emission waveband of the cesium lead rust perovskite nanocrystal film, and when the incident light is incident along the x direction, the resonance peak position is near 545nm, and the fluorescence intensity of the cesium lead rust perovskite nanocrystal at the wavelength position is very weak, so that the regulation and control of the resonance peak position by using the polarization state is formed.
FIG. 7 shows the pump laser power 200. Mu.J/cm 2 The results of the output spectral characteristic measurements at the incidence of x-polarization and y-polarization, respectively. Under the x polarization state, the resonance wavelength position of the super-surface resonant cavity is not coincident with the fluorescence light emitting position, and effective laser gain amplification cannot be realized, so that the output signal intensity is weak. And under the incidence of the y polarization state, the resonance position of the super-surface resonant cavity is well superposed with the fluorescence gain wave band, thereby generatingAnd (5) outputting laser. By coupling the asymmetric super-surface resonant cavity array, the switching control of the emergent laser by using the polarization state of the pumping light can be well realized.
The invention realizes laser output through the nanoscale resonant cavity, greatly reduces the size of the device, and can realize all-optical regulation and control on the wavelength of the emergent laser by utilizing the polarization state of the incident light; the needle point effect is enhanced through the sharp-pointed shape of the four-corner star, and the local field amplification effect is enhanced; the laser output device has a simple structure, and can realize laser output of other wave bands through size ratio conversion.
The above detailed description is provided to illustrate the present invention, but not to limit the present invention, and any modifications, equivalents, improvements, etc. made within the spirit of the present invention and the scope of the claims fall within the scope of the present invention.
Claims (7)
1. The utility model provides an all-optical adjustable plasmon nanometer optical device based on asymmetric super surface structure which characterized in that: the tunable all-optical gain amplifier comprises a transparent substrate layer, a metal super-surface array layer and a gain medium layer from bottom to top respectively, wherein the metal super-surface array layer is deposited on the transparent substrate layer and is a metal nano structure distributed in an asymmetric rectangular periodic array, the period Px of the asymmetric rectangular periodic array in the x direction in an array plane is unequal to the period Py of the asymmetric rectangular periodic array in the y direction in the array plane, the metal nano structure is in a composite shape formed by a coaxial four-corner star and a square, the metal nano structure is in central symmetry in the plane, a light-emitting gain material is coated on the metal super-surface array layer to serve as the gain medium layer, plasmon resonance of the metal nano structure is coupled with a periodic array lattice diffraction mode, high-Q-value resonance response is achieved, the polarization selection resonance response is provided by the asymmetric rectangular period, and all-optical adjustable output based on the polarization state of pumping light is achieved.
2. The asymmetric super-surface structure based all-optical tunable plasmonic nano-optical device of claim 1, wherein: the transparent substrate layer isSiO 2 The material is selected from quartz glass, sapphire, organic glass or polydimethylsiloxane.
3. The asymmetric super-surface structure based plasmonic nano-optical device of claim 1, wherein: the metal nano-structure material is aluminum, and the working visible light band of the metal nano-structure material is extended to ultraviolet to near-infrared bands.
4. The asymmetric super-surface structure based all-optical tunable plasmonic nano-optical device according to claim 1, characterized in that: the period Px and Py of the asymmetric rectangular periodic array are 200 nm-600 nm, in the metal nano structure, the maximum diagonal length of a four-corner star is 1/6-1/3 of the period Px, the included angle between the diagonal of the coaxial rectangle and the diagonal of the four-corner star is 45 degrees, and the side length of a square is 1/2-3/4 of the length of the diagonal of the four-corner star.
5. The asymmetric super-surface structure based all-optical tunable plasmonic nano-optical device according to claim 1, characterized in that: the gain medium layer is in a liquid or solid state, the refractive index of the gain medium layer is different from that of the transparent substrate layer by delta n, delta n is less than 0.1, the light-emitting half-peak width of the gain medium is less than 50nm, and the length deviation of the light-emitting wavelength of the gain medium relative to the length of the period of the asymmetric super-surface structure in the x direction multiplied by the refractive index of the gain material is less than 30nm.
6. The asymmetric super-surface structure based all-optical tunable plasmonic nano-optical device of claim 4, wherein: the difference value of the period Px of the rectangular periodic array in the x direction and the period Py of the rectangular periodic array in the y direction in the array plane is 40-100 nm, and the device realizes the all-optical regulation effect of laser output on/off when the polarization state x and the y direction of pump laser are converted.
7. Use of the asymmetric super-surface structure based all-optical tunable plasmonic nano-optical device according to any of claims 1-6, characterized in that: the method is applied to the nanometer laser.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116027608A (en) * | 2023-03-27 | 2023-04-28 | 清华大学 | All-optical nonlinear modulation super-surface diffraction optical computing device and preparation method thereof |
| CN116203655A (en) * | 2023-05-04 | 2023-06-02 | 北京理工大学 | Sodium-based heat-sensitive optical super-surface and heat-sensitive structural device with optical super-surface |
| CN116953828A (en) * | 2023-09-12 | 2023-10-27 | 之江实验室 | Multiband absorber and design method thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101882752A (en) * | 2010-06-28 | 2010-11-10 | 北京航空航天大学 | Surface plasma nanometer laser |
| CN102124382A (en) * | 2008-06-19 | 2011-07-13 | 雷文布里克有限责任公司 | Optical metapolarizer device |
| US20120327502A1 (en) * | 2011-06-24 | 2012-12-27 | Nikolay Ivanovich Zheludev | Tunable metamaterials and related devices |
| CN103066495A (en) * | 2012-12-24 | 2013-04-24 | 北京大学深圳研究生院 | Plasma laser device |
| CN109324466A (en) * | 2017-07-31 | 2019-02-12 | 三星电子株式会社 | Super clever projector and electronic equipment including super clever projector |
| CN109901310A (en) * | 2019-05-05 | 2019-06-18 | 中北大学 | A kind of polarization beat length photoswitch surpassing surface based on surface phasmon |
| CN113381277A (en) * | 2021-05-27 | 2021-09-10 | 哈尔滨工程大学 | Circular polarization laser of chiral metamaterial |
| CN114721071A (en) * | 2022-03-15 | 2022-07-08 | 天津山河光电科技有限公司 | Super-surface optical device and manufacturing process thereof |
-
2022
- 2022-07-28 CN CN202210897329.7A patent/CN115173203B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102124382A (en) * | 2008-06-19 | 2011-07-13 | 雷文布里克有限责任公司 | Optical metapolarizer device |
| CN101882752A (en) * | 2010-06-28 | 2010-11-10 | 北京航空航天大学 | Surface plasma nanometer laser |
| US20120327502A1 (en) * | 2011-06-24 | 2012-12-27 | Nikolay Ivanovich Zheludev | Tunable metamaterials and related devices |
| CN103066495A (en) * | 2012-12-24 | 2013-04-24 | 北京大学深圳研究生院 | Plasma laser device |
| CN109324466A (en) * | 2017-07-31 | 2019-02-12 | 三星电子株式会社 | Super clever projector and electronic equipment including super clever projector |
| CN109901310A (en) * | 2019-05-05 | 2019-06-18 | 中北大学 | A kind of polarization beat length photoswitch surpassing surface based on surface phasmon |
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