CN115167598A - Power supply voltage selection circuit - Google Patents
Power supply voltage selection circuit Download PDFInfo
- Publication number
- CN115167598A CN115167598A CN202210887455.4A CN202210887455A CN115167598A CN 115167598 A CN115167598 A CN 115167598A CN 202210887455 A CN202210887455 A CN 202210887455A CN 115167598 A CN115167598 A CN 115167598A
- Authority
- CN
- China
- Prior art keywords
- circuit
- vout
- voltage
- switch
- tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001514 detection method Methods 0.000 claims abstract description 49
- 238000006243 chemical reaction Methods 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims description 3
- 230000009471 action Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/561—Voltage to current converters
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Dc-Dc Converters (AREA)
Abstract
The application discloses supply voltage selection circuit includes: when the VOUT end is short-circuited, the VOUT short-circuit detection circuit generates positive Vdg voltage conduction due to the pressure difference between the VOUT end and the VIN end, pulls SEL _ VOUTB of the level conversion circuit to the potential of the VIN end, controls the VOUT gating end in the power selection switch circuit to be closed, and quickly blocks the current from the VIN end to the VOUT end. This application is through improving circuit structure, adds fast switch circuit, can skip comparator and level shift circuit when VOUT short circuit, closes VOUT gating end among the power selection switch circuit, blocks VIN to VOUT's short-circuit current fast, reduces the impact to internal circuit to avoid influencing the normal work of chip.
Description
Technical Field
The present application relates to electronic circuits, and more particularly to a power supply voltage selection circuit.
Background
The boost circuit is one of six basic chopper circuits, is a switching direct current booster circuit, can enable output voltage to be higher than input voltage, and is mainly applied to direct current motor transmission, single-phase Power Factor Correction (PFC) circuits and other alternating current and direct current Power supplies.
However, in the maximum power supply voltage selection circuit in the boost circuit, if the switching tube is not switched timely when VOUT is short-circuited, a through current from VIN to VOUT is likely to occur, and the circuit is likely to be damaged under the action of the through current, which affects the normal operation of the chip.
Disclosure of Invention
The utility model provides a purpose provides a supply voltage selection circuit, through improving circuit structure, adds VOUT short circuit detection circuitry, can skip comparator and level shift circuit when VOUT short circuit, closes VOUT strobe end, blocks VIN to VOUT's short-circuit current fast, reduces the impact to internal circuit to avoid influencing the normal work of chip.
In order to achieve the purpose, the application provides the following technical scheme:
a supply voltage selection circuit comprising: bleeder circuit, comparator, level conversion circuit, power selection switch circuit and VOUT short circuit detection circuit, wherein:
the first end of the voltage division circuit is connected with the VOUT end, the second end of the voltage division circuit is connected with the VIN end, the third end of the voltage division circuit is connected with the positive phase input end of the comparator, and the fourth end of the voltage division circuit is connected with the negative phase input end of the comparator;
the output end of the comparator is connected with the first end of the level switching circuit, the second end of the level switching circuit is connected with the first end of the power selection switch circuit, and the third end of the level switching circuit is respectively connected with the second end of the power selection switch circuit and the first end of the VOUT short-circuit detection circuit; the fourth end of the power selection switch circuit is connected with the second end of the VOUT short-circuit detection circuit, the common end of the power selection switch circuit is connected with the VOUT end, the fifth end of the power selection switch circuit is connected with the third end of the VOUT short-circuit detection circuit, and the common end of the power selection switch circuit is connected with the VIN end;
the fourth end of the level switching circuit, the third end of the power selection switch circuit and the fourth end of the VOUT short-circuit detection circuit are respectively connected with a VMAX end;
when the VOUT end is short-circuited, the VOUT short-circuit detection circuit generates positive Vdg voltage to be conducted due to the voltage difference between the VOUT end and the VIN end, the SEL _ VOUTB of the level conversion circuit is pulled to the potential of the VIN end, the VOUT gating end in the power supply selection switch circuit is controlled to be closed, and the short-circuit current from the VIN end to the VOUT end is quickly blocked.
Further, the VOUT short-circuit detection circuit includes a high-voltage switching tube MPS, a source of the high-voltage switching tube MPS is connected to the third terminal of the VOUT short-circuit detection circuit as the first terminal of the VOUT short-circuit detection circuit, a gate of the high-voltage switching tube MPS is connected to the VOUT terminal as the second terminal of the VOUT short-circuit detection circuit, a drain of the high-voltage switching tube MPS is connected to the VIN terminal as the third terminal of the VOUT short-circuit detection circuit, and a substrate of the high-voltage switching tube MPS is connected to the VMAX terminal.
Further, the high-voltage switch tube MPS is a PMOS tube.
Furthermore, the voltage dividing circuit comprises a first resistor and a second resistor, one end of the first resistor is used as the first end of the voltage dividing circuit and is connected with the VOUT end, the other end of the first resistor is connected with one end of the second resistor, the public end of the first resistor is used as the third end of the voltage dividing circuit and is connected with the positive phase input end of the comparator, the other end of the second resistor is connected with the VIN end, and the public end of the second resistor is used as the fourth end of the voltage dividing circuit and is connected with the negative phase input end of the comparator.
Further, the level conversion circuit is a levelshift circuit.
Further, the levelshift circuit includes: inverter, voltage source, switch tube MP1-MP4, switch tube MN1-MN2, wherein:
the input end of the phase inverter is connected with the grid electrode of the switch tube MN2, the first end of the level shift circuit is connected with the output end of the comparator, the output end of the phase inverter is connected with the grid electrode of the switch tube MN1, the drain electrode of the switch tube MN1 is connected with the drain electrode of the switch tube MN2, and the common end of the switch tube MN1 is grounded;
the source electrode of the switch tube MN1 is connected with the drain electrode of the switch tube MP3, the source electrode of the switch tube MN2 is connected with the drain electrode of the switch tube MP4, the grid electrode of the switch tube MP3 is connected with the grid electrode of the switch tube MP4 and one end of the voltage source, the source electrode of the switch tube MP3 is respectively connected with the drain electrode of the switch tube MP1 and the grid electrode of the switch tube MP2, and the common end of the switch tube MP3 is used as the second end of the levelshift circuit and is connected with the first end of the power selection switch circuit;
the other end of the voltage source is connected with the source electrode of the switch tube MP1 and the source electrode of the switch tube MP2 respectively, the common end of the voltage source is used as the fourth end of the levelshift circuit and is connected with the VMAX end, the grid electrode of the switch tube MP1 is connected with the drain electrode of the switch tube MP2, and the common end of the voltage source is used as the third end of the levelshift circuit and is connected with the second end of the power selection switch circuit.
Further, the switching tubes MP1-MP4 are low voltage PMOS tubes.
Further, the switching tubes MN1-MN2 are high-voltage NMOS tubes.
Further, the power selection switch circuit includes: switching tubes MP5-MP6, wherein:
the grid electrode of the switching tube MP5 is used as the second end of the power supply selection switching circuit and is connected with the third end of the level conversion circuit, and the grid electrode of the switching tube MP6 is used as the first end of the power supply selection switching circuit and is connected with the second end of the level conversion circuit; the source electrode of the switch tube MP5 is connected with the source electrode of the switch tube MP6, and the common end of the switch tube MP5 is used as the third end of the power selection switch circuit and is connected with the VMAX end;
the drain electrode of the switch tube MP5 is used as the fifth end of the power supply selection switch circuit and is connected with the third end of the VOUT short-circuit detection circuit, and the drain electrode of the switch tube MP6 is used as the fourth end of the power supply selection switch circuit and is connected with the second end of the VOUT short-circuit detection circuit.
Further, the switch tube MP5 is a high voltage PMOS tube, and the switch tube MP6 is a low voltage PMOS tube.
As can be seen from the above technical solutions, compared with the prior art, the present application discloses a power supply voltage selection circuit, including: when the VOUT end is short-circuited, the VOUT short-circuit detection circuit generates positive Vdg voltage conduction due to the pressure difference between the VOUT end and the VIN end, pulls SEL _ VOUTB of the level conversion circuit to the potential of the VIN end, controls the VOUT gating end in the power selection switch circuit to be closed, and quickly blocks short-circuit current from the VIN end to the VOUT end. This application is through improving circuit structure, adds fast switch circuit, can skip comparator and level shift circuit when VOUT short circuit, closes VOUT gating end among the power selection switch circuit, blocks VIN to VOUT's short-circuit current fast, reduces the impact to internal circuit to avoid influencing the normal work of chip.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, it is obvious that the drawings in the following description are only embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic diagram of a power supply voltage selection circuit provided in the prior art;
fig. 2 is a block diagram of a power supply voltage selection circuit according to an embodiment of the present disclosure;
fig. 3 is a schematic diagram of a power supply voltage selection circuit according to an embodiment of the present disclosure; and
fig. 4 is a schematic diagram illustrating a comparison between the prior art and the current flowing from the switching tube MP6 in the technical solutions provided in the embodiments of the present application.
Detailed Description
The applicant found in the study that, as shown in fig. 1, in the maximum power supply voltage selection circuit in the prior art, comp (comparator) is a low voltage circuit formed by internal low voltage transistors, switch transistors MP1/MP2/MP6 are low voltage transistors, switch transistors MP3/MP4/MP5/MN1/MN2 are high voltage transistors, vb is a bias voltage for protecting switch transistors MP1/MP2, generally several volts, VIN is low in normal operation, VOUT is high in voltage, a voltage sampled by a voltage dividing resistor string between VIN and VOUT is sent to the comparator for comparison, an output signal is transferred to a high voltage domain through a level conversion circuit and sent to the gates of the selection switch transistor MP5 and the switch transistor MP6, VMAX is connected to the higher one of VIN and VOUT, VMAX is connected to VOUT in normal operation, switch transistor MP6 is opened, switch transistor MP5 is closed, if VOUT is short-circuited to 0V, RC delay of the voltage dividing resistor string is needed, comparator delay is delayed, after high voltage level conversion circuit delay, switch signals vonb and switch transistor MP5 is opened, switch transistor MP5 is closed, VIN and switch current is easily generated by switching diode switching transistor MP5 and VIN and switching diode is turned off.
The application provides a supply voltage selection circuit, its aim at: through improving circuit structure, add VOUT short circuit detection circuitry, can skip comparator and level shift circuit when VOUT short circuit, close switch tube MP6, block VIN to VOUT's short-circuit current fast, reduce the impact to internal circuit to avoid influencing the normal work of chip.
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Fig. 2 is a block diagram of a power supply voltage selection circuit according to an embodiment of the present disclosure. As shown in fig. 2, an embodiment of the present application provides a power supply voltage selection circuit, which includes: a voltage dividing circuit 21, a comparator 22, a level conversion circuit 23, a power selection switch circuit 24, and a VOUT short-circuit detection circuit 25, wherein:
a first end of the voltage division circuit 21 is connected with a VOUT end, a second end of the voltage division circuit 21 is connected with a VIN end, a third end of the voltage division circuit 21 is connected with a positive phase input end of the comparator, and a fourth end of the voltage division circuit 21 is connected with a negative phase input end of the comparator;
the output end of the comparator 22 is connected to the first end of the level shift circuit 23, the second end of the level shift circuit 23 is connected to the first end of the power selection switch circuit 24, and the third end of the level shift circuit 23 is connected to the second end of the power selection switch circuit 24 and the first end of the VOUT short-circuit detection circuit 25, respectively; a fourth end of the power selection switch circuit 24 is connected with a second end of the VOUT short-circuit detection circuit 25, a common end of the power selection switch circuit 24 is connected with the VOUT end, a fifth end of the power selection switch circuit 24 is connected with a third end of the VOUT short-circuit detection circuit 25, and a common end of the power selection switch circuit 24 is connected with the VIN end;
the fourth terminal of the level conversion circuit 23, the third terminal of the power selection switch circuit 24 and the fourth terminal of the VOUT short-circuit detection circuit 24 are respectively connected to a VMAX terminal;
when the VOUT terminal is short-circuited, the VOUT short-circuit detection circuit 25 is turned on by a positive Vdg voltage generated by a voltage difference between the VOUT terminal and the VIN terminal, pulls the SEL _ VOUTB of the level shift circuit 23 to a potential of the VIN terminal, controls the VOUT gate terminal in the power selection switch circuit to be turned off, and quickly blocks a short-circuit current from the VIN terminal to the VOUT terminal.
This application embodiment adds VOUT short circuit detection circuitry through improving circuit structure, can skip comparator and level shift circuit when VOUT short circuit, closes power selection switch circuit, blocks VIN to VOUT's short-circuit current fast, reduces the impact to internal circuit to avoid influencing the normal work of chip.
Further, as shown in fig. 3, the VOUT short-circuit detection circuit 25 includes a high-voltage switching tube MPS, a source of the high-voltage switching tube MPS serving as a first terminal of the VOUT short-circuit detection circuit 25 is connected to the third terminal of the level shifter 23, a gate of the high-voltage switching tube MPS serving as a second terminal of the VOUT short-circuit detection circuit 25 is connected to the VOUT terminal, a drain of the high-voltage switching tube MPS serving as a third terminal of the VOUT short-circuit detection circuit 25 is connected to the VIN terminal, and a substrate of the high-voltage switching tube MPS is connected to the VMAX terminal.
The high-voltage switch tube MPS is a PMOS tube.
Further, as shown in fig. 3, the voltage dividing circuit 21 includes a first resistor R1 and a second resistor R2, one end of the first resistor R1 is used as the first end of the voltage dividing circuit 21 and connected to the VOUT end, the other end of the first resistor R1 is connected to one end of the second resistor R2, a common end of the first resistor R1 is used as the third end of the voltage dividing circuit 21 and connected to the positive-phase input end of the comparator 22, the other end of the second resistor R2 is connected to the VIN end, and a common end of the second resistor R2 is used as the fourth end of the voltage dividing circuit 21 and connected to the negative-phase input end of the comparator 22.
Note that the level shift circuit 23 is a level shift circuit.
Further, as shown in fig. 3, the levelshift circuit includes: inverter G, voltage source Vb, switch tube MP1-MP4, switch tube MN1-MN2, wherein:
the input end of the phase inverter G is connected with the gate of the switch tube MN2, the first end of the level shift circuit is connected with the output end of the comparator 22, the output end of the phase inverter G is connected with the gate of the switch tube MN1, the drain of the switch tube MN1 is connected with the drain of the switch tube MN2, and the common end of the switch tube MN1 is grounded;
the source electrode of the switch tube MN1 is connected to the drain electrode of the switch tube MP3, the source electrode of the switch tube MN2 is connected to the drain electrode of the switch tube MP4, the gate electrode of the switch tube MP3 is connected to the gate electrode of the switch tube MP4 and one end of the voltage source Vb, the source electrode of the switch tube MP3 is connected to the drain electrode of the switch tube MP1 and the gate electrode of the switch tube MP2, respectively, and the common end of the switch tube MP3 is connected to the first end of the power selection switch circuit 24 as the second end of the levelshift circuit;
the other end of the voltage source Vb is connected to the source of the switch tube MP1 and the source of the switch tube MP2, respectively, a common end of the voltage source Vb is connected to the VMAX end as the fourth end of the levelshift circuit, a gate of the switch tube MP1 is connected to the drain of the switch tube MP2, and a common end of the voltage source Vb is connected to the second end of the power selection switch circuit 24 as the third end of the levelshift circuit.
It should be noted that the switching tubes MP1-MP4 are low-voltage PMOS tubes.
It should be noted that the switching tubes MN1 to MN2 are high-voltage NMOS tubes.
Further, as shown in fig. 3, the power selection switch circuit 24 includes: switching tubes MP5-MP6, wherein:
the gate of the switching tube MP5 is used as the second terminal of the power selection switching circuit 24 and is connected to the third terminal of the level shift circuit 23, and the gate of the switching tube MP6 is used as the first terminal of the power selection switching circuit 24 and is connected to the second terminal of the level shift circuit 23; the source electrode of the switch tube MP5 is connected to the source electrode of the switch tube MP6, and the common terminal thereof is used as the third terminal of the power selection switch circuit 24 and connected to the VMAX terminal;
the drain of the switching tube MP5 is used as the fifth terminal of the power selection switch circuit 24 and is connected to the third terminal of the VOUT short-circuit detection circuit 25, and the drain of the switching tube MP6 is used as the fourth terminal of the power selection switch circuit 24 and is connected to the second terminal of the VOUT short-circuit detection circuit 25.
It should be noted that the switch tube MP5 is a high-voltage PMOS tube, and the switch tube MP6 is a low-voltage PMOS tube.
In the embodiment of the present application, the high voltage tubes MN1 to MN3 are metal-oxide semiconductor field effect transistors, which are abbreviated as MOSFETs, which are field effect transistors widely used in analog circuits and digital circuits. MOSFETs are classified into "N-type" and "P-type" types according to their "channel" (working carrier) polarities, and are also commonly referred to as NMOSFETs and PMOSFETs, and other types include NMOS and PMOS for short. The source (source) and the drain (drain) of the MOS transistor can be reversed, and both are N-type regions formed in the P-type back gate. In most cases, the two regions are identical, and even if the two regions are reversed, the performance of the device is not affected. The working principle is as follows: the VGS is used to control the amount of the "induced charges" to change the condition of the conductive channel formed by these "induced charges" and then achieve the purpose of controlling the drain current. In the fabrication of the tube, a large number of positive ions are present in the insulating layer by the process, so that more negative charges are induced on the other side of the interface, which turns on the N region of the high-permeation impurity, forming a conducting channel, with a larger drain current ID even at VGS = 0. When the gate voltage is changed, the amount of charge induced in the channel is also changed, and the width of the conductive channel is also changed, so that the drain current ID is changed according to the change of the gate voltage.
The working principle of the MOS transistor is the same whether the MOS transistor is an N-type MOS transistor or a P-type MOS transistor. The MOS transistor controls the current of the drain electrode of the output end by the voltage applied to the grid electrode of the input end. The MOS transistor is a voltage-controlled device, and controls the device by the voltage applied to the gate, and the charge storage effect caused by the base current when the transistor is switched is not generated, so that the switching speed of the MOS transistor should be faster than that of the transistor in the switching application. The internal structure of the MOS tube is shown in the following figure; when it is turned on, only one polarity of carriers (multi-carriers) participate in the conduction, and the transistor is a unipolar transistor. The conduction mechanism is the same as that of a low-power MOS tube, but the structure is greatly different, the low-power MOS tube is a transverse conduction device, and a power MOSFET mostly adopts a vertical conduction structure, also called VMOSFET, so that the voltage resistance and the current resistance of the MOSFET device are greatly improved.
The transistor is mainly characterized in that a silicon dioxide insulating layer is arranged between the metal grid and the channel, so that the transistor has high input resistance, and an n-type conducting channel is formed between two high-concentration n diffusion regions when the transistor is conducted. The n-channel enhancement type MOS tube has to apply forward bias on a grid electrode, and only when the grid source voltage is larger than the threshold voltage, the n-channel MOS tube with a conduction channel is generated. The n-channel depletion type MOS tube is an n-channel MOS tube with a conductive channel generated when no gate voltage is applied (the gate-source voltage is zero).
Note that the mos tube functions: 1. can be applied to an amplifying circuit. Because the input impedance of the MOS tube amplifier is very high, the coupling capacitance can be smaller, and an electrolytic capacitor is not needed. 2. A very high input impedance is very suitable for impedance transformation. Impedance transformation is commonly used in the input stage of a multi-stage amplifier. 3. May be used as a variable resistor. 4. Can conveniently be used as a constant current source. 5. Can be used as an electronic switch.
The MOS tube is a voltage-controlled element, the MOS tube can be conducted as long as the voltage required by the voltage-controlled element is added, the conduction of the MOS tube is just like that of a triode in a saturation state, and the voltage drop of a conducting junction is minimum. This is often referred to as a switching action, and removal of this control voltage is cut off.
In the embodiment of the present application, as shown in fig. 3, during normal operation, VIN is low voltage, VOUT is high voltage, the switching tube MP5 is turned off, the switching tube MP6 is turned on, SEL _ VOUTB and VIN are both lower than VOUT, the switching tube MPs is turned off, the voltage difference between the gate terminal, the source terminal and the drain terminal of the switching tube MPs is in the safe operating range (SOA), the high voltage is loaded between the pair D of gate terminal, source terminal and drain terminal, and the MPs can well operate within the device characteristic range of the high voltage tube. At the moment of short circuit of VOUT, the gate terminals of the switching tubes MPS are 0v, vmax, sel _vinb, sel _voutball fall rapidly and keep the previous switching tube MP5 turned off, the switching tube MP6 is turned on unchanged, and before the forward comparator 22 and the power selection switch circuit 24 flip signals correctly, a through current from VIN to VOUT is generated through the body diode of the switching tube MP5, which easily burns the circuit if the current is large, and easily triggers latchup if the current lasts for a long time. At the moment of short circuit of VOUT, the switching tube MPS is turned on by a positive Vdg voltage generated by a voltage difference between VIN and VOUT to pull SEL _ VOUTB to VIN potential, where VIN voltage is higher than VMAX voltage, and the switching tube MP6 is turned off to rapidly block short-circuit current from the VIN end to the VOUT end.
As shown in fig. 4, pre in the figure represents a prior art solution, new represents a technical solution of the present application, vsg _ MP6 is a source-gate voltage difference of the switching tube MP6, i _ MP6 is a current flowing from the switching tube MP6, and it can be seen from fig. 4 that: in the prior art, after VOUT is in short circuit, the switching tube MP6 is continuously conducted, so that a chip circuit is easily damaged; according to the technical scheme, the short-circuit current from the VIN end to the VOUT end can be quickly blocked, and the switching tube MP6 is quickly closed, so that the chip circuit is prevented from being damaged.
The embodiment of the application discloses supply voltage selection circuit includes: the voltage-dividing circuit comprises a voltage-dividing circuit, a comparator, a level conversion circuit, a power supply selection switch circuit and a VOUT short circuit detection circuit, wherein a first end of the voltage-dividing circuit is connected with a VOUT end, a second end of the voltage-dividing circuit is connected with a VIN end, a third end of the voltage-dividing circuit is connected with a positive phase input end of the comparator, and a fourth end of the voltage-dividing circuit is connected with a negative phase input end of the comparator; the output end of the comparator is connected with the first end of the level switching circuit, the second end of the level switching circuit is connected with the first end of the power selection switch circuit, and the third end of the level switching circuit is respectively connected with the second end of the power selection switch circuit and the first end of the VOUT short-circuit detection circuit; the fourth end of the power selection switch circuit is connected with the second end of the VOUT short-circuit detection circuit, the common end of the power selection switch circuit is connected with the VOUT end, the fifth end of the power selection switch circuit is connected with the third end of the VOUT short-circuit detection circuit, and the common end of the power selection switch circuit is connected with the VIN end; the fourth end of the level switching circuit, the third end of the power selection switch circuit and the fourth end of the VOUT short-circuit detection circuit are respectively connected with a VMAX end; when the VOUT end is short-circuited, the VOUT short-circuit detection circuit generates positive Vdg voltage to be conducted due to the voltage difference between the VOUT end and the VIN end, the SEL _ VOUTB of the level conversion circuit is pulled to the potential of the VIN end, the VOUT gating end in the power supply selection switch circuit is controlled to be closed, and the short-circuit current from the VIN end to the VOUT end is quickly blocked.
This application embodiment adds VOUT short circuit detection circuitry through improving circuit structure, can skip comparator and level shift circuit when the VOUT short circuit, closes the VOUT gating end among the power selection switch circuit, blocks the short-circuit current of VIN end to VOUT end fast, reduces the impact to internal circuit to avoid influencing the normal work of chip.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that an article or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such article or apparatus. Without further limitation, an element defined by the phrase "comprising one of 8230, and" comprising 8230does not exclude the presence of additional like elements in an article or device comprising the same element.
It is intended that the foregoing description of the disclosed embodiments enable any person skilled in the art to make or use the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A supply voltage selection circuit, comprising: bleeder circuit, comparator, level conversion circuit, power selection switch circuit and VOUT short circuit detection circuit, wherein:
the first end of the voltage division circuit is connected with the VOUT end, the second end of the voltage division circuit is connected with the VIN end, the third end of the voltage division circuit is connected with the positive phase input end of the comparator, and the fourth end of the voltage division circuit is connected with the negative phase input end of the comparator;
the output end of the comparator is connected with the first end of the level switching circuit, the second end of the level switching circuit is connected with the first end of the power selection switch circuit, and the third end of the level switching circuit is respectively connected with the second end of the power selection switch circuit and the first end of the VOUT short-circuit detection circuit; the fourth end of the power selection switch circuit is connected with the second end of the VOUT short-circuit detection circuit, the common end of the power selection switch circuit is connected with the VOUT end, the fifth end of the power selection switch circuit is connected with the third end of the VOUT short-circuit detection circuit, and the common end of the power selection switch circuit is connected with the VIN end;
the fourth end of the level switching circuit, the third end of the power selection switch circuit and the fourth end of the VOUT short-circuit detection circuit are respectively connected with a VMAX end;
when the VOUT end is short-circuited, the VOUT short-circuit detection circuit generates positive Vdg voltage to be conducted due to the voltage difference between the VOUT end and the VIN end, the SEL _ VOUTB of the level conversion circuit is pulled to the potential of the VIN end, the VOUT gating end in the power supply selection switch circuit is controlled to be closed, and the short-circuit current from the VIN end to the VOUT end is quickly blocked.
2. The power voltage selection circuit of claim 1, wherein the VOUT short circuit detection circuit is a high-voltage switching tube MPS, a source of the high-voltage switching tube MPS is connected to the third terminal of the level shifter circuit as the first terminal of the VOUT short circuit detection circuit, a gate of the high-voltage switching tube MPS is connected to the VOUT terminal as the second terminal of the VOUT short circuit detection circuit, a drain of the high-voltage switching tube MPS is connected to the VIN terminal as the third terminal of the VOUT short circuit detection circuit, and a substrate of the high-voltage switching tube MPS is connected to the VMAX terminal.
3. The power supply voltage selection circuit of claim 2, wherein the high voltage switch tube MPS is a PMOS tube.
4. The power supply voltage selection circuit according to claim 1, wherein the voltage divider circuit includes a first resistor and a second resistor, one end of the first resistor is connected to the VOUT terminal as the first terminal of the voltage divider circuit, the other end of the first resistor is connected to one end of the second resistor, a common terminal thereof is connected to the positive input terminal of the comparator as the third terminal of the voltage divider circuit, the other end of the second resistor is connected to the VIN terminal, and the common terminal thereof is connected to the negative input terminal of the comparator as the fourth terminal of the voltage divider circuit.
5. The power supply voltage selection circuit according to claim 1, wherein the level shift circuit is a levelshift circuit.
6. The supply voltage selection circuit of claim 5, wherein the levelshift circuit comprises: inverter, voltage source, switch tube MP1-MP4, switch tube MN1-MN2, wherein:
the input end of the phase inverter is connected with the grid electrode of the switch tube MN2, the first end of the level shift circuit is connected with the output end of the comparator, the output end of the phase inverter is connected with the grid electrode of the switch tube MN1, the drain electrode of the switch tube MN1 is connected with the drain electrode of the switch tube MN2, and the common end of the switch tube MN1 is grounded;
a source electrode of the switch tube MN1 is connected to a drain electrode of the switch tube MP3, a source electrode of the switch tube MN2 is connected to a drain electrode of the switch tube MP4, a gate electrode of the switch tube MP3 is connected to a gate electrode of the switch tube MP4 and one end of the voltage source, a source electrode of the switch tube MP3 is connected to a drain electrode of the switch MP1 and a gate electrode of the switch tube MP2, respectively, and a common end of the switch tube MP3 is used as a second end of the levelshift circuit and connected to a first end of the power selection switch circuit;
the other end of the voltage source is connected with the source electrode of the switch tube MP1 and the source electrode of the switch tube MP2 respectively, the common end of the voltage source is used as the fourth end of the levelshift circuit and is connected with the VMAX end, the grid electrode of the switch tube MP1 is connected with the drain electrode of the switch tube MP2, and the common end of the voltage source is used as the third end of the levelshift circuit and is connected with the second end of the power selection switch circuit.
7. The power supply voltage selection circuit of claim 6, wherein the switching transistors MP1-MP4 are low voltage PMOS transistors.
8. The power supply voltage selection circuit of claim 6, wherein the switching transistors MN1-MN2 are high voltage NMOS transistors.
9. The power supply voltage selection circuit of claim 1, wherein the power supply selection switch circuit comprises: switching tubes MP5-MP6, wherein:
the grid electrode of the switching tube MP5 is used as the second end of the power supply selection switching circuit and is connected with the third end of the level conversion circuit, and the grid electrode of the switching tube MP6 is used as the first end of the power supply selection switching circuit and is connected with the second end of the level conversion circuit; the source electrode of the switch tube MP5 is connected with the source electrode of the switch tube MP6, and the common end of the switch tube MP5 is used as the third end of the power selection switch circuit and is connected with the VMAX end;
the drain electrode of the switching tube MP5 is used as the fifth end of the power selection switching circuit and is connected with the third end of the VOUT short-circuit detection circuit, and the drain electrode of the switching tube MP6 is used as the fourth end of the power selection switching circuit and is connected with the second end of the VOUT short-circuit detection circuit.
10. The power supply voltage selection circuit of claim 1, wherein the switch MP5 is a high voltage PMOS transistor, and the switch MP6 is a low voltage PMOS transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210887455.4A CN115167598B (en) | 2022-07-26 | 2022-07-26 | Power supply voltage selection circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210887455.4A CN115167598B (en) | 2022-07-26 | 2022-07-26 | Power supply voltage selection circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115167598A true CN115167598A (en) | 2022-10-11 |
| CN115167598B CN115167598B (en) | 2024-03-15 |
Family
ID=83496782
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210887455.4A Active CN115167598B (en) | 2022-07-26 | 2022-07-26 | Power supply voltage selection circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115167598B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117335379A (en) * | 2023-09-19 | 2024-01-02 | 深圳市思远半导体有限公司 | Power supply selection circuit and power supply |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20060045199A (en) * | 2004-11-12 | 2006-05-17 | 삼성전자주식회사 | Voltage source selector |
| CN103001475A (en) * | 2012-11-19 | 2013-03-27 | 西安三馀半导体有限公司 | Short-circuit protecting circuit applied to synchronous boost type direct current-direct current (DC-DC) converter |
| CN112331245A (en) * | 2020-11-05 | 2021-02-05 | 湘潭大学 | Voltage selection circuit suitable for nonvolatile memory |
-
2022
- 2022-07-26 CN CN202210887455.4A patent/CN115167598B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20060045199A (en) * | 2004-11-12 | 2006-05-17 | 삼성전자주식회사 | Voltage source selector |
| CN103001475A (en) * | 2012-11-19 | 2013-03-27 | 西安三馀半导体有限公司 | Short-circuit protecting circuit applied to synchronous boost type direct current-direct current (DC-DC) converter |
| CN112331245A (en) * | 2020-11-05 | 2021-02-05 | 湘潭大学 | Voltage selection circuit suitable for nonvolatile memory |
Non-Patent Citations (1)
| Title |
|---|
| 杨冬平;王莉;江登宇;: "降栅压技术在MOSFET驱动中的应用", 电力***及其自动化学报, no. 01 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117335379A (en) * | 2023-09-19 | 2024-01-02 | 深圳市思远半导体有限公司 | Power supply selection circuit and power supply |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115167598B (en) | 2024-03-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8754679B2 (en) | Low current power-on reset circuit and method | |
| CN109905111B (en) | Level shift circuit suitable for GaN high-speed gate drive circuit | |
| US4752703A (en) | Current source polarity switching circuit | |
| US6940317B2 (en) | Level-shifter circuit properly operable with low voltage input | |
| CN108768142A (en) | A kind of boostrap circuit | |
| JPH0158896B2 (en) | ||
| US20080191784A1 (en) | Ac Coupling And Gate Charge Pumping For Nmos And Pmos Device Control | |
| CN107634649B (en) | Switching device driving circuit and method and voltage conversion circuit | |
| CN115167598B (en) | Power supply voltage selection circuit | |
| US4071784A (en) | MOS input buffer with hysteresis | |
| CN110045779B (en) | Voltage selection circuit and method | |
| CN208571909U (en) | A kind of boostrap circuit | |
| US6813169B2 (en) | Inverter device capable of reducing through current | |
| US11770120B2 (en) | Bootstrap circuit supporting fast charging and discharging and chip | |
| US11646733B2 (en) | Digital output driver circuit and method | |
| CN111510118B (en) | Low-power-consumption high-speed comparator | |
| CN114362501A (en) | Dynamic backflow prevention circuit for wireless charging synchronous rectifier bridge and working method thereof | |
| CN110445482B (en) | Comparator with low power consumption and high slew rate | |
| CN109861503B (en) | Driving circuit for power device | |
| CN114185389B (en) | Self-adaptive core voltage generation circuit of integrated circuit | |
| KR940007182Y1 (en) | Nmos inverter circuit | |
| US8436659B1 (en) | Circuits and methods for reducing electrical stress on a transistor | |
| CN115313826A (en) | Power supply voltage switching circuit and power supply voltage switching method | |
| CN118199378A (en) | Control device for power conversion equipment | |
| JP3024155B2 (en) | Inverter circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |