CN115163831A - Reaction kettle seal for growing gallium nitride by ammonothermal method and manufacturing method - Google Patents
Reaction kettle seal for growing gallium nitride by ammonothermal method and manufacturing method Download PDFInfo
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- CN115163831A CN115163831A CN202210779592.6A CN202210779592A CN115163831A CN 115163831 A CN115163831 A CN 115163831A CN 202210779592 A CN202210779592 A CN 202210779592A CN 115163831 A CN115163831 A CN 115163831A
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 39
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 39
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 238000007789 sealing Methods 0.000 claims abstract description 127
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 20
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 10
- 229910052709 silver Inorganic materials 0.000 claims abstract description 10
- 239000004332 silver Substances 0.000 claims abstract description 10
- 238000005452 bending Methods 0.000 claims description 19
- 238000003466 welding Methods 0.000 claims description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 238000001513 hot isostatic pressing Methods 0.000 claims description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- 238000005516 engineering process Methods 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 238000010288 cold spraying Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 238000005553 drilling Methods 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 abstract 1
- 238000001816 cooling Methods 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 238000009694 cold isostatic pressing Methods 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 238000004080 punching Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000007792 addition Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16J—PISTONS; CYLINDERS; SEALINGS
- F16J15/00—Sealings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23P—METAL-WORKING NOT OTHERWISE PROVIDED FOR; COMBINED OPERATIONS; UNIVERSAL MACHINE TOOLS
- B23P15/00—Making specific metal objects by operations not covered by a single other subclass or a group in this subclass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/065—Composition of the material produced
- B01J2203/0665—Gallium nitrides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/04—Pressure vessels, e.g. autoclaves
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
- C30B7/105—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes using ammonia as solvent, i.e. ammonothermal processes
Landscapes
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention is suitable for the technical field of gallium nitride reaction kettle sealing, and provides a reaction kettle sealing for growing gallium nitride by an ammonothermal method, which comprises the following steps: the inner sealing ring is an annular ring with a hollow inner part formed by a hollow silver pipe; the outer sealing ring is an open circular tube and is welded on the outer wall of the inner sealing ring. The invention also provides a preparation method for sealing the autoclave for growing gallium nitride by the ammonothermal method, which is characterized in that holes are formed on the surface of the inner sealing ring, then nitrogen enters the inner sealing ring in a high-temperature and high-pressure environment, and then the nitrogen is rapidly cooled to fill the nitrogen into the inner sealing ring.
Description
Technical Field
The invention belongs to the technical field of gallium nitride reaction kettle sealing, and particularly relates to a reaction kettle sealing for growing gallium nitride by an ammonothermal method and a manufacturing method thereof.
Background
Gallium nitride, as a representative of third-generation semiconductor materials, has unique properties of large forbidden band width, high breakdown electric field, large thermal conductivity, high electron saturation drift velocity, small dielectric constant and the like, so that the gallium nitride has wide market prospects in the aspects of optoelectronic devices, power electronics, radio frequency microwave devices, lasers, detectors and the like.
At present, a growth device for growing gallium nitride crystals by an ammonothermal method generally comprises a reaction vessel, wherein a raw material area (also called a dissolution area) and a crystallization area (also called a growth area) are arranged in the reaction vessel, polycrystalline raw materials are arranged in the raw material area, seed crystals are arranged in the crystallization area, the raw material area and the crystallization area are separated by a partition plate, and a heating device is arranged outside the reaction vessel.
When the growth device is used for growing the gallium nitride crystal, the growth speed of the gallium nitride crystal is generally slow, and the growth period is long. But the grown gallium nitride is the highest quality. However, the requirements of long-time high temperature and high pressure on the reliability and safety of the sealing structure are high, and the sealing device in the prior art cannot meet the requirements of long-time high temperature and high pressure resistance and corrosion resistance.
Disclosure of Invention
The invention provides a sealing and manufacturing method of a reaction kettle for growing gallium nitride by an ammonothermal method, and aims to solve the problem that the prior art cannot meet the requirements of producing gallium nitride by the ammonothermal method on high temperature resistance, high pressure resistance and corrosion resistance.
The invention is realized in such a way that a reaction kettle seal for growing gallium nitride by an ammonothermal method comprises the following steps:
the inner sealing ring is an annular ring with a hollow inner part formed by a hollow silver pipe;
the outer sealing ring is an open circular tube, and the outer sealing ring is welded on the outer wall of the inner sealing ring.
Preferably, the diameter of the circular tube of the outer sealing ring and the diameter of the circular tube of the inner sealing ring are 5.
Preferably, the angle of the opening on the outer sealing ring is 120 °.
Preferably, the hollow pipe of the inner sealing ring is filled with nitrogen.
A manufacturing method for ammonothermal growth of gallium nitride reaction kettle seal comprises the following steps:
step one, bending a hollow pipe into a ring shape through a pipe bending machine, and welding the joint of the ring-shaped circular pipe by adopting argon arc welding to prepare a rough blank of the inner sealing ring;
drilling a circular hole with the diameter of 0.1-0.3mm on the outer side wall of the rough blank of the inner sealing ring;
thirdly, putting the rough blank of the inner sealing ring into a hot isostatic pressing machine to be pressurized to 80MPa, gradually and slowly heating to 700 ℃ and preserving heat for 10 minutes; then starting a cold function of a hot isostatic pressing machine to rapidly cool the rough blank of the inner sealing ring;
step four, opening a side wall of a circular tube made of high-strength nickel-based alloy GH145 to form an outer sealing ring rough blank, bending the outer sealing ring rough blank, and assembling the outer sealing ring rough blank on the outer wall of an inner sealing ring;
and fifthly, performing laser welding on the joint of the outer sealing ring and the inner sealing ring to enable the outer sealing ring and the inner sealing ring to form a whole, and depositing on the surface of a workpiece by adopting an ultrasonic rapid cold spraying technology to obtain a silver layer of 1 mm.
Preferably, the diameter of the round hole in the second step is 0.2mm.
Preferably, the number of the round holes in the second step is not less than 8.
Preferably, the distance between the circular holes in the second step is not less than 10cm;
preferably, the round hole in the second step is located on the end face of the bottom of the blank of the inner sealing ring.
Preferably, the round hole in the second step is located on the top end face of the rough blank of the inner sealing ring.
Compared with the prior art, the embodiment of the application mainly has the following beneficial effects:
1. according to the reaction kettle seal for growing gallium nitride by the ammonothermal method, the high-pressure nitrogen is filled in the inner sealing ring, when the reaction kettle is pressurized, the inner sealing ring can deform under the action of pressure, so that the inner sealing ring and the reaction kettle body are combined more tightly, the sealing effect is more excellent, the outer sealing ring arranged outside the inner sealing ring can effectively reinforce the inner sealing ring, the pressure of the inner sealing ring is dispersed, and the overall sealing strength of the reaction kettle for growing gallium nitride by the ammonothermal method is improved.
2. According to the manufacturing method for sealing the reaction kettle for growing the gallium nitride by the ammonothermal method, the circular hole is rapidly closed by adopting the rapid cooling function, so that the inside of the inner sealing ring can always keep a pressure non-leakage state; therefore, a sealed workpiece filled with high-pressure nitrogen can be easily obtained, the welding requirement of a structural part is reduced, the structural stability is improved, and the high-temperature and high-pressure resistance and corrosion resistance of the seal are improved.
Drawings
FIG. 1 is a schematic structural diagram of a sealing structure of a reaction kettle for growing gallium nitride by an ammonothermal method.
Detailed Description
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs; the terminology used in the description of the application herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application; the terms "including" and "having," and any variations thereof, in the description and claims of this application and the description of the above figures are intended to cover non-exclusive inclusions. The terms "first," "second," and the like in the description and claims of this application or in the above-described drawings are used for distinguishing between different objects and not for describing a particular order.
Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the application. The appearances of the phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. It is explicitly and implicitly understood by one skilled in the art that the embodiments described herein can be combined with other embodiments.
The embodiment of the invention provides a reactor seal for growing gallium nitride by an ammonothermal method, as shown in figure 1, the reactor seal for growing gallium nitride by the ammonothermal method comprises:
the inner seal ring 1 is of an annular structure with a hollow interior formed by bending a hollow silver tube;
the outer sealing ring 2 is an open circular tube, and the outer sealing ring 2 is welded on the outer wall of the inner sealing ring 1 after being bent;
in this embodiment, the diameter of the circular tube of the outer sealing ring 2 and the diameter of the circular tube of the inner sealing ring 1 are 5 degrees, and the opening angle of the outer sealing ring 2 is 120 degrees; the inner sealing ring 1 is filled with nitrogen, when the inner sealing ring 1 is under the pressure inside the reaction kettle, the inner sealing ring 1 can deform under the pressure, so that the inner sealing ring 1 is combined with the reaction kettle body more tightly, the sealing effect is more excellent, the outer sealing ring 2 arranged outside the inner sealing ring 1 can effectively reinforce the inner sealing ring 1, the pressure applied to the inner sealing ring 1 is dispersed, the sealing integral strength of the reaction kettle for growing gallium nitride by an ammonia-thermal method is improved, and the technical requirements of high temperature and high pressure in the production process of growing gallium nitride by the ammonia-thermal method are met;
as a preferred embodiment in this embodiment, the outer seal ring 2 is made of a high-strength nickel-based alloy GH145, which has good corrosion resistance and oxidation resistance at 980 ℃ or below, high strength at 800 ℃ or below, good creep resistance at 700 ℃ or below, good relaxation resistance at 540 ℃ or below, and good formability and weldability; the high-temperature and high-pressure conditions in the production of growing gallium nitride by an ammonothermal method can be borne, and the strength of the inner silver sealing ring 1 is supplemented;
the embodiment of the invention provides a manufacturing method for a reactor seal for growing gallium nitride by an ammonothermal method, which comprises the following steps:
step one, bending the hollow pipe into a ring shape through a pipe bending machine, and welding the joint of the ring-shaped circular pipe by adopting argon arc welding to prepare a rough blank of the inner sealing ring 1.
Step two, punching round holes with the diameter of 0.2mm into the end face of the bottom of the rough blank of the inner sealing ring 1, wherein the number of the round holes is not less than 10, and the distance between different round holes is not less than 20cm;
thirdly, putting the rough blank of the inner sealing ring 1 into a hot isostatic pressing machine to be pressurized to 80MPa, gradually and slowly heating to 700 ℃ and preserving heat for 10 minutes; then starting a cold pressing function of a hot isostatic pressing machine to rapidly cool the rough blank of the inner sealing ring 1; taking out the processed inner sealing ring 1 for standby;
step four, opening a side wall of a circular tube made of the high-strength nickel-based alloy GH145 to manufacture an outer sealing ring 2 rough blank, and bending the outer sealing ring 2 rough blank by adopting a bending machine to assemble the outer sealing ring 2 rough blank on the outer wall of the inner sealing ring 1;
step five, performing laser welding on the seam of the outer sealing ring 2 and the inner sealing ring 1 to enable the outer sealing ring 2 and the inner sealing ring 1 to form a whole, depositing on the surface of a workpiece by using an ultrasonic rapid cold spraying technology to obtain a silver layer of 1mm, and then further improving the surface density of the workpiece by using a cold isostatic pressing technology;
as a preferred embodiment in this embodiment, the method for manufacturing the sealing of the ammonothermal gallium nitride reaction kettle comprises:
step one, bending the hollow pipe into a ring shape through a pipe bending machine, and welding the joint of the ring-shaped circular pipe through argon arc welding to prepare a rough blank of the inner sealing ring 1.
Step two, punching round holes with the diameter of 0.1mm into the outer side wall of the rough blank of the inner sealing ring 1, wherein the number of the round holes is not less than 15, and the distance between different round holes is not less than 10cm;
thirdly, putting the rough blank of the inner sealing ring 1 into a hot isostatic pressing machine to be pressurized to 80MPa, gradually and slowly heating to 700 ℃ and preserving heat for 10 minutes; then starting a hot isostatic pressing machine cooling function to rapidly cool the rough blank of the inner sealing ring 1; taking out the processed inner sealing ring 1 for standby;
step four, opening a side wall of a circular tube made of high-strength nickel-based alloy GH145 to manufacture an outer sealing ring 2 rough blank, and bending the outer sealing ring 2 rough blank by adopting a bending machine to assemble the outer sealing ring 2 rough blank on the outer wall of the inner sealing ring 1;
step five, performing laser welding on the joint of the outer sealing ring 2 and the inner sealing ring 1 to enable the outer sealing ring 2 and the inner sealing ring 1 to form a whole, depositing on the surface of a workpiece by using an ultrasonic rapid cold spraying technology to obtain a silver layer with the thickness of 1mm, and further improving the surface density of the workpiece by using a cold isostatic pressing technology;
as a preferred embodiment in this embodiment, the method for manufacturing the sealing of the ammonothermal gallium nitride reaction kettle comprises:
step one, bending the hollow pipe into a ring shape through a pipe bending machine, and welding the joint of the ring-shaped circular pipe by adopting argon arc welding to prepare a rough blank of the inner sealing ring 1.
Step two, punching round holes with the diameter of 0.3mm into the end surface of the top of the rough blank of the inner sealing ring 1, wherein the number of the round holes is not less than 8, and the distance between different round holes is not less than 30cm;
thirdly, putting the rough blank of the inner sealing ring 1 into a hot isostatic pressing machine to be pressurized to 80MPa, gradually and slowly heating to 700 ℃ and preserving heat for 10 minutes; then starting a hot isostatic pressing machine cooling function to rapidly cool the rough blank of the inner sealing ring 1; taking out the processed inner sealing ring 1 for standby;
step four, opening a side wall of a circular tube made of the high-strength nickel-based alloy GH145 to manufacture an outer sealing ring 2 rough blank, and bending the outer sealing ring 2 rough blank by adopting a bending machine to assemble the outer sealing ring 2 rough blank on the outer wall of the inner sealing ring 1;
step five, performing laser welding on the joint of the outer sealing ring 2 and the inner sealing ring 1 to enable the outer sealing ring 2 and the inner sealing ring 1 to form a whole, depositing on the surface of a workpiece by using an ultrasonic rapid cold spraying technology to obtain a silver layer with the thickness of 1mm, and further improving the surface density of the workpiece by using a cold isostatic pressing technology;
in this embodiment, while the circular holes on the end face of the blank of the inner seal ring 1 are heated in the hot isostatic pressing machine, nitrogen filled in the hot isostatic pressing machine enters the inner seal ring 1 through the circular holes, after heat preservation treatment is performed at 700 ℃, the pressure inside the inner seal ring 1 reaches a balanced state, and then the circular holes are rapidly closed by adopting a rapid cooling function, so that the inside of the inner seal ring 1 can always keep a pressure non-leakage state; the manufacturing method for the ammonothermal gallium nitride reaction kettle seal has the advantages that the production process is simple, the nitrogen filling mode reduces welding requirements of structural parts, the structural stability is improved, the high-temperature and high-pressure environment of the ammonothermal gallium nitride reaction kettle can be effectively borne, the equipment loss is reduced, and the service life of the equipment is prolonged;
it should be noted that, for simplicity of description, the above-mentioned embodiments are described as a series of acts, but those skilled in the art will recognize that the present invention is not limited by the order of acts, as some steps may occur in other orders or concurrently in accordance with the invention. Further, those skilled in the art will appreciate that the embodiments described in the specification are presently preferred and that no acts or modules are necessarily required in the present disclosure.
The above examples are only used to illustrate the technical solutions of the present invention, and do not limit the scope of the present invention. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from these embodiments without making any inventive step, fall within the scope of the present invention. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art may still make various combinations, additions, deletions or other modifications of the features of the embodiments of the present invention according to the situation without conflict, and thus, different technical solutions that do not substantially depart from the spirit of the present invention may be obtained, and these technical solutions also belong to the scope of the present invention.
Claims (10)
1. A reactor seal for ammonothermal growth of gallium nitride, comprising:
the inner sealing ring is an annular ring with a hollow inner part formed by a hollow silver pipe;
the outer sealing ring is an open circular tube, and the outer sealing ring is welded on the outer wall of the inner sealing ring.
2. The sealing device for the ammonothermal growth reactor for gallium nitride according to claim 1, wherein the diameter of the circular tube of the outer sealing ring is 5.
3. The seal of claim 2, wherein the angle of the opening of the outer seal ring is 120 °.
4. The seal of claim 3, wherein the hollow tube of the inner seal ring is filled with nitrogen.
5. The method for manufacturing a reactor seal for ammonothermal growth of gallium nitride according to any of claims 1 to 4, comprising:
step one, bending a hollow pipe into a ring shape through a pipe bending machine, and welding the joint of the ring-shaped circular pipe by adopting argon arc welding to prepare a rough blank of the inner sealing ring;
drilling a circular hole with the diameter of 0.1-0.3mm on the outer side wall of the rough blank of the inner sealing ring;
thirdly, putting the rough blank of the inner sealing ring into a hot isostatic pressing machine to be pressurized to 80MPa, gradually and slowly heating to 700 ℃ and preserving heat for 10 minutes; then starting a cold function of a hot isostatic pressing machine to rapidly cool the rough blank of the inner sealing ring;
step four, opening a side wall of a circular tube made of high-strength nickel-based alloy GH145 to form an outer sealing ring rough blank, bending the outer sealing ring rough blank, and assembling the outer sealing ring rough blank on the outer wall of an inner sealing ring;
and fifthly, performing laser welding on the joint of the outer sealing ring and the inner sealing ring to enable the outer sealing ring and the inner sealing ring to form a whole, and depositing on the surface of the workpiece by adopting an ultrasonic rapid cold spraying technology to obtain a silver layer with the thickness of 1 mm.
6. The method for manufacturing the sealing of the autoclave for ammonothermal growth of gallium nitride according to claim 5, wherein the diameter of the circular hole in the second step is 0.2mm.
7. The method for manufacturing the sealing of the reaction kettle for ammonothermally growing the gallium nitride according to claim 6, wherein the number of the round holes in the second step is not less than 8.
8. The method for manufacturing the sealing of the ammonothermal growth gallium nitride reaction kettle according to claim 7, wherein the distance between the circular holes in the second step is not less than 10cm.
9. The method for manufacturing the ammonothermal growth gallium nitride autoclave seal according to claim 8, wherein the round hole in the second step is located on the end face of the bottom of the blank of the inner seal ring.
10. The method for manufacturing the ammonothermal growth gallium nitride autoclave seal of claim 9, wherein the round hole in the second step is located on the top end face of the rough blank of the inner seal ring.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210779592.6A CN115163831A (en) | 2022-07-03 | 2022-07-03 | Reaction kettle seal for growing gallium nitride by ammonothermal method and manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210779592.6A CN115163831A (en) | 2022-07-03 | 2022-07-03 | Reaction kettle seal for growing gallium nitride by ammonothermal method and manufacturing method |
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| CN115163831A true CN115163831A (en) | 2022-10-11 |
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| CN202210779592.6A Pending CN115163831A (en) | 2022-07-03 | 2022-07-03 | Reaction kettle seal for growing gallium nitride by ammonothermal method and manufacturing method |
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|---|---|---|---|---|
| GB2041112A (en) * | 1979-02-02 | 1980-09-03 | Pressure Science Inc | Resiliently deformable metallic annular sealing ring |
| JP2000257717A (en) * | 1999-03-05 | 2000-09-19 | Japan Atom Energy Res Inst | Metallic hollow o-ring |
| JP2001182833A (en) * | 1999-12-24 | 2001-07-06 | Nippon Valqua Ind Ltd | Metal gasket and its manufacturing method |
| US20020175479A1 (en) * | 2001-05-25 | 2002-11-28 | Behil Vincent S. | Resilient metallic gasket |
| US20100239448A1 (en) * | 2007-07-02 | 2010-09-23 | Emmanuel Uzoma Okoroafor | Fkm or ffkm multiple layers seal |
| CN106439013A (en) * | 2016-08-24 | 2017-02-22 | 苏州先创流体控制技术有限公司 | Annular pipe sealing ring used for ultralow-temperature dynamic sealing and machining method thereof |
| CN206017713U (en) * | 2016-08-24 | 2017-03-15 | 苏州先创流体控制技术有限公司 | A kind of sealing ring of ultralow temperature dynamic sealing |
| CN213839530U (en) * | 2020-12-14 | 2021-07-30 | 成都航睿科精密机械有限公司 | From metal seal who takes limit function |
-
2022
- 2022-07-03 CN CN202210779592.6A patent/CN115163831A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2041112A (en) * | 1979-02-02 | 1980-09-03 | Pressure Science Inc | Resiliently deformable metallic annular sealing ring |
| JP2000257717A (en) * | 1999-03-05 | 2000-09-19 | Japan Atom Energy Res Inst | Metallic hollow o-ring |
| JP2001182833A (en) * | 1999-12-24 | 2001-07-06 | Nippon Valqua Ind Ltd | Metal gasket and its manufacturing method |
| US20020175479A1 (en) * | 2001-05-25 | 2002-11-28 | Behil Vincent S. | Resilient metallic gasket |
| US20100239448A1 (en) * | 2007-07-02 | 2010-09-23 | Emmanuel Uzoma Okoroafor | Fkm or ffkm multiple layers seal |
| CN106439013A (en) * | 2016-08-24 | 2017-02-22 | 苏州先创流体控制技术有限公司 | Annular pipe sealing ring used for ultralow-temperature dynamic sealing and machining method thereof |
| CN206017713U (en) * | 2016-08-24 | 2017-03-15 | 苏州先创流体控制技术有限公司 | A kind of sealing ring of ultralow temperature dynamic sealing |
| CN213839530U (en) * | 2020-12-14 | 2021-07-30 | 成都航睿科精密机械有限公司 | From metal seal who takes limit function |
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