CN1151574A - Method for patterning metal layer - Google Patents
Method for patterning metal layer Download PDFInfo
- Publication number
- CN1151574A CN1151574A CN96120116A CN96120116A CN1151574A CN 1151574 A CN1151574 A CN 1151574A CN 96120116 A CN96120116 A CN 96120116A CN 96120116 A CN96120116 A CN 96120116A CN 1151574 A CN1151574 A CN 1151574A
- Authority
- CN
- China
- Prior art keywords
- layer
- mask layer
- magnetosphere
- magnetic pole
- lower magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/32—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film
- H01F41/34—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying conductive, insulating or magnetic material on a magnetic film, specially adapted for a thin magnetic film in patterns, e.g. by lithography
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Magnetic Heads (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Abstract
The invention discloses a method for forming a lower magnetic pole in film magnetic head. The forming of a thin isolation layer on the surface of the lower magnetic pole becomes easier because of the shape of the lower magnetic pole. The method comprises: a magnetic layer is formed on the substrate; a mask layer is deposited on the magnetic layer; an ion implantation layer is formed in the mask layer through the ion implantation method; a part of the mask layer is etched by the etching agent to form a first inclined wall; the other part of the mask layer is etched by with the etching agent to form a second inclined wall, and a mask layer with patterns on the surface is formed and obtained; and the magnetic layer with the same configuration of the patterns of the mask layer is formed through the ion sharpening method, and the lower magnetic pole is obtained.
Description
The present invention relates to a kind of thin-film head that is used for hard disk drive (HDD), and more particularly relate to a kind of by adopting ion implantation to form improving one's methods of lower magnetic pole.
As everyone knows, thin-film head is widely used in reading, write down and/or wipe the signal on tape or disk.Figure 1 shows that the signal drawing in side sectional elevation of a typical thin film magnetic head 100.Thin-film head 100 comprises first magnetosphere 124 that is formed in the substrate 110, be formed on second magnetosphere 126 on the part of upper surface of first magnetosphere, 124 tops and pedestal 110, be deposited on first insulation course 134 above the part of second magnetosphere 126, make and be formed on figuratum coil layer 140 above first insulation course 134 by metallic conductor, cover second insulation course 138 of the figuratum coil layer 140 and first insulation course 134 and be formed on last magnetic pole 136 above second insulation course 138, should go up magnetic pole and also cover the part that is not covered in some part of second magnetosphere 126 and first insulation course 134 by second insulation course 138, wherein lower magnetic pole 125 is made up of first and second magnetospheres 124,126.In addition, owing to second magnetosphere 126 has a step that forms around the edge of first magnetosphere 124, each layer that is formed on later on above them also has a step, so just forms a stepped area 142.
In Fig. 2 A to 2F, the signal drawing in side sectional elevation that is provided has illustrated a kind of method that forms the typical prior art of lower magnetic pole 125 on the substrate shown in Fig. 1 110.
The process that constitutes lower magnetic pole 125 is that this layer is made of metal, and is formed on above the substrate 110 by the technology of employing as sputter since the formation of a seeding layer (Seed layer) 112.By adopting, for example, spin coating method is with first photoresist layer, as a kind of eurymeric (positive type) photoresist, deposit to seeding layer 112 above, then, according to predetermined configuration, make its part 116,118 form pattern, shown in Fig. 2 A, the part of seeding layer 112 are come out thus.
In next procedure, shown in Fig. 2 B, the part 122 in the pattern part 116 is exposed by a branch of light.Shown in Fig. 2 C, on the part that has come out on the seeding layer 112, electroplate first magnetosphere 124, shown in Fig. 2 D, be formed with the part 122 that is exposed in the pattern part 116 then by adopting suitable developer to remove.
Then, shown in Fig. 2 E, in first magnetosphere 124 and seeding layer 112 since remove be exposed part 122 and be not capped that part of above plating second magnetosphere 126.Shown in Fig. 2 F, the part 118 and 120 that forms pattern is removed, then, all unwanted first and second magnetospheres and seeding layer are all removed from substrate 110.
In connecing next step, as shown in Figure 1, deposition first insulation course 134 above the part that in lower magnetic pole 125 and substrate 110, is not covered by lower magnetic pole 125.First insulation course, 134 roles are as the interval between the upper and lower magnetic pole 125,136, wherein the thickness of first insulation course 134 plays crucial effect in the performance of thin-film head, this is because narrower interval can be with magnetic confinement less part to the tape, thereby allows more magnetic signal to be recorded on the given tape length.
One of major defect of said method is: even and thin unfertile land to form first insulation course 134 on lower magnetic pole 125 be difficult, this is because steep step 150 of existence is represented as with dashed lines circle in Fig. 2 F.
Therefore, fundamental purpose of the present invention is to provide a kind of and forms the method for lower magnetic pole at the magnetic head that is used for HDD, and the shape of this lower magnetic pole can make and constitute thin dielectric layer thereon and become easy.
According to an aspect of the present invention, provide a kind of method that forms lower magnetic pole, this method comprises the following steps:
(a) in substrate, form a magnetosphere;
(b) mask of deposition (Mask) layer on magnetosphere;
(c) use ion implantation ion implanted layer of formation on mask layer;
(d) part by etching mask layer forms first inclined wall;
(e) another part by etching mask layer forms second inclined wall, obtains forming figuratum mask layer thus; And
(f) use ion beam milling method (ion milling), magnetosphere is formed and the pattern that is formed with the mask layer identical configuration of pattern, obtain lower magnetic pole thus.
From below in conjunction with the given description to preferred embodiment of accompanying drawing, above-mentioned and other purpose of the present invention and feature will become apparent, wherein:
Figure 1 shows that the schematic cross-sectional figure of a conventional thin-film head;
Schematic cross-sectional figure shown in Fig. 2 A to 2F illustrates a kind of typical art methods that forms lower magnetic pole in thin-film head shown in Figure 1; And
The schematic cross-sectional figure that Fig. 3 A to 3F is provided illustrates a kind of method of making lower magnetic pole according to a preferred embodiment of the invention.
Referring to Fig. 3 A to 3F, shown schematic cross-sectional figure has illustrated and has made a related step of lower magnetic pole that is used for the thin-film head according to the present invention.
As shown in Figure 3A, the process of making lower magnetic pole is from making a substrate 210 with upper surface, and this substrate is made by a kind of non-magnetic material, such as SiO
2Or Al
2O
3, in the above, form seeding layer 212 by method such as evaporation method or sputtering method.Seeding layer 212 has a bottom and a top layer, has the thickness of 50-200 dust respectively, and bottom is made by chromium (Cr) or titanium (Ti), and top layer is by permalloy (permalloy), and Ni-Fe makes such as Ni-Fe.Then, plating one magnetosphere 214 on seeding layer 212, the thickness position 8-10 μ m of this magnetosphere and be by permalloy, for example Ni-Fe is made.
One of deposition is by SiO on magnetosphere 214
2The mask layer of making 216.Preferably, the thickness of mask layer 216 is bigger than the thickness of magnetosphere 214, for example is 9-20 μ m.
Then, use ion implantation, form ion implanted layer 216a on the top of mask layer 216, this ion implantation comprises with the ion beam bombardment mask layer 216 that comprises positive ion.In other words, as shown in Figure 3A, mask layer 216 is divided into ion implanted layer 216a and does not suffer ion to inject damaged layer 216b, and ion implanted layer 216a is positioned on layer 216b that do not suffer damage.
By adopting method such as spin-coating method, formation photoresist layer 218 on ion implanted layer 216a, and the part 220 of photoresist layer 218 expose by a branch of light, thus define a size of lower magnetic pole.
In the step under connecing, shown in Fig. 3 B, the part 220 of photoresist layer 218 is removed, then, partly removed, obtain first inclined wall 223 thus with the mask layer 216 that etchant will not be capped owing to removing part 220 with developer.
Part 222 in the remainder of photoresist layer 218 is exposed by a branch of light, thereby has defined the zone, an end (tip) of lower magnetic pole.In the step under connecing, shown in Fig. 3 C, part 222 is removed by adopting developer, then, partly remove, obtain second inclined wall 225 thus with the mask layer 216 that etchant will not be capped owing to removing part 222, during this period, the remainder of the mask layer 216 that is not capped owing to remove part 220 also is removed, and with this upper surface of magnetosphere 214 is exposed, and forms figuratum mask layer 214 thereby obtain one.Preferably, etchant can be by with ammonium fluoride (NH
4F) mix with hydrogen fluoride (HF) and to prepare.
According to the preferred embodiments of the invention, during etching, because the existence of the defective of ion implanted layer, ion implanted layer 216a is more more responsive to etchant than layer 216b that do not suffer damage, cause etching rate quicker, what conversely, the degree of tilt of first and second inclined walls that produce did not so produce when not having ion implanted layer 216a in the magnetosphere 216 is steep.
Again referring to Fig. 3 D, the photoresist layer 218 that forms face on the figuratum mask layer 224 is divested as described, wherein, form figuratum mask layer 224 during magnetosphere 214 forms patterns as mask.
Afterwards, use the dryness etching method, as the ion beam milling method, make magnetosphere 214 form the pattern of lower magnetic poles 226, this lower magnetic pole has the configuration identical with the figuratum mask layer of formation 224, and wherein, shown in Fig. 3 E, lower magnetic pole 226 comprises inclined wall 229 and upper surface 230.
Shown in Fig. 3 F, the inclined wall 229 in the lower magnetic pole 226 passes through to use conventional method resulting steep, and this just makes that formation thereon is thin and insulation course 228 is more easy uniformly.
Though only describe the present invention with describe at preferred embodiment, but should understand, to this area person of being familiar with,, can also carry out other corrections and change not departing from the basis of defined the spirit and scope of the present invention in the appended claims.
Claims (10)
1, make one to be formed on suprabasil metal level formation method of patterning, this method may further comprise the steps:
(a) form one on metal level and form figuratum mask layer, the shape of this mask layer makes and forms film thereon easily; And
(b) make this metal level constitute a pattern with the figuratum mask layer identical configuration of formation.
2, method as claimed in claim 1, wherein, step (a) comprises the following steps:
(a1) deposition mas layer on metal level;
(a2) use ion implantation on mask layer, to form ion implanted layer;
(a3) on ion implanted layer, form photoresist layer;
(a4), form first inclined wall by the part of etching mask; With
(a5) by another part of etching mask layer, form second inclined wall, obtain to form figuratum mask layer thus.
3, method as claimed in claim 1, wherein, metal level is made by magnetic material.
4, method as claimed in claim 3, wherein, magnetic material is made by permalloy.
5, method as claimed in claim 4, wherein, magnetosphere has the thickness of 8-10 μ m.
6, method as claimed in claim 2, wherein, mask layer is by silicon dioxide (SiO
2) make.
7, method as claimed in claim 2, wherein, mask layer is next etched with etchant, this etchant is by ammonium fluoride (NH
4F) and hydrogen fluoride (HF) make.
8, method as claimed in claim 2, wherein, mask layer has the thickness of 9-20 μ m.
9, method as claimed in claim 1, wherein, metal level adopts the ion beam milling method to constitute pattern.
10, form the method for lower magnetic pole, this method comprises the following steps:
(a) in substrate, form magnetosphere;
(b) deposition mas layer on magnetosphere;
(c) use ion implantation in mask, to form ion implanted layer;
(d) use etchant, the part of etching mask layer is to form first inclined wall;
(e) use etchant, another part of etching mask layer to form second inclined wall, obtains to form figuratum mask layer thus; And
(f) use the ion beam milling method, make magnetosphere form the pattern of the configuration identical, obtain lower magnetic pole with this with forming figuratum mask layer.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR33526/95 | 1995-09-30 | ||
| KR1019950033526A KR0174460B1 (en) | 1995-09-30 | 1995-09-30 | Method for patterning a lower pole of the thin film magnetic head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1151574A true CN1151574A (en) | 1997-06-11 |
Family
ID=19428926
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN96120116A Pending CN1151574A (en) | 1995-09-30 | 1996-09-28 | Method for patterning metal layer |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH09138910A (en) |
| KR (1) | KR0174460B1 (en) |
| CN (1) | CN1151574A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1959879B (en) * | 2006-10-12 | 2010-05-12 | 南京航空航天大学 | Superfine magnetic elements, and electrochemical manufacturing method |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6383598B1 (en) * | 2000-06-21 | 2002-05-07 | International Business Machines Corporation | Patterned magnetic recording media with regions rendered nonmagnetic by ion irradiation |
| US9893141B2 (en) | 2015-02-26 | 2018-02-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Magnetic core, inductor, and method for fabricating the magnetic core |
-
1995
- 1995-09-30 KR KR1019950033526A patent/KR0174460B1/en not_active IP Right Cessation
-
1996
- 1996-09-26 JP JP8254114A patent/JPH09138910A/en active Pending
- 1996-09-28 CN CN96120116A patent/CN1151574A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1959879B (en) * | 2006-10-12 | 2010-05-12 | 南京航空航天大学 | Superfine magnetic elements, and electrochemical manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH09138910A (en) | 1997-05-27 |
| KR970017208A (en) | 1997-04-30 |
| KR0174460B1 (en) | 1999-04-15 |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |