CN115145347A - Second-order temperature compensation band gap reference circuit insensitive to operational amplifier offset - Google Patents
Second-order temperature compensation band gap reference circuit insensitive to operational amplifier offset Download PDFInfo
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- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
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Abstract
The invention discloses a second-order temperature compensation band gap reference circuit insensitive to operational amplifier offset, which comprises a reference generating circuit, a second-order temperature compensation circuit, an operational amplifier, a starting circuit and a reference starting completion circuit, wherein the second-order temperature compensation circuit is connected with the reference generating circuit, the reference generating circuit is respectively connected with the starting circuit and the reference starting completion circuit after passing through the operational amplifier, and the starting circuit is connected with the reference starting completion circuit. The offset current of the transistor is adjusted through the adjusting resistor, and the temperature drift coefficient of the reference voltage is indirectly adjusted, so that the offset voltage of the operational amplifier is only a direct current offset relative to the reference voltage, a first-order or high-order temperature coefficient relation does not exist, and the reference voltage can be adjusted to the optimal temperature drift coefficient only by once adjustment.
Description
Technical Field
The invention relates to a second-order temperature compensation band gap reference circuit insensitive to operational amplifier offset.
Background
The band-gap reference is a vital module in an analog circuit and a mixed signal circuit, provides reference for all voltages including power supply level and the like in a chip, and is mainly reflected on temperature drift, namely the deviation degree of reference voltage along with temperature change.
Fig. 1 is a diagram of a conventional bandgap reference generating circuit, which mainly includes an operational amplifier, a resistor, a transistor and a current mirror. The base emitter of a resistor triode Q1 is clamped by an operational amplifierVoltage V BE1 Clamped to the positive terminal of resistor R1, and the voltage of the negative terminal of R1 is the base emitter voltage V of transistor Q2 BE2 The triode Q2 is formed by connecting N transistors Q1 in parallel, so that a current I with a positive temperature coefficient is generated PTAT The current value is:
wherein Δ V BE Is the difference between the emitter voltages, V, of the transistor Q1 and the transistor Q2 T Is an intermediate quantity, k is Boltzmann constant, T is Kelvin temperature, q is the amount of electron charge, I PTAT Is a first order positive temperature coefficient current. MOS transistors M1, M2 and M3 are current mirrors, and I is PTAT The current mirror is biased to the transistors Q1, Q2, Q3, and then the reference voltage V REF The voltage values of (a) are:
V BE3 the base emitter voltage of the transistor Q2 is high-order temperature coefficient, and the first order term of the temperature coefficient is negative. In the first-order temperature compensation band gap reference, the high-order temperature coefficient of the base emitter voltage of the transistor is usually ignored, so that V can be enabled only by modifying the resistance value of R3 BE3 And Δ V BE The absolute values of the temperature coefficients are equal, thereby obtaining V of the low temperature drift coefficient REF 。
If the offset voltage of the operational amplifier is V OS Then the current magnitude of IPTAT is:
it can be seen thatPositive temperature coefficient current and V OS Is related to and V BE Voltage and I PATA There is a non-linear relationship, then V OS Will influence V REF Due to temperature drift of V OS There is a large dispersion during the manufacturing process, which results in V REF In addition, because the traditional band gap reference only adopts first-order temperature compensation, the temperature drift of the reference voltage is difficult to be below 10ppm, and fig. 2 is a simulation curve of the temperature drift of the traditional band gap reference, it can be seen that the reference voltage changes by about 2.5mV and the temperature drift coefficient is about 13ppm within the temperature range of-25 ℃ to 125 ℃, and the actually produced band gap reference temperature drift value is larger.
Disclosure of Invention
In order to solve the above technical problems, the present invention provides a second-order temperature compensation bandgap reference circuit with simple structure and insensitive to operational amplifier offset.
The technical scheme for solving the technical problems is as follows: a second-order temperature compensation band gap reference circuit insensitive to operational amplifier offset comprises a reference generating circuit, a second-order temperature compensation circuit, an operational amplifier, a starting circuit and a reference starting completion circuit, wherein the second-order temperature compensation circuit is connected with the reference generating circuit, the reference generating circuit is respectively connected with the starting circuit and the reference starting completion circuit after passing through the operational amplifier, and the starting circuit is connected with the reference starting completion circuit.
The reference generating circuit comprises a first MOS tube, a first triode, a second triode, a first resistor, a second resistor and a third adjustable resistor, wherein a source electrode of the first MOS tube is connected with a power supply, a drain electrode of the first MOS tube, one end of the second resistor and one end of the third adjustable resistor are connected together and used as an output end of the reference generating circuit, the other end of the third adjustable resistor is connected with an inverting input end of the operational amplifier and an emitting electrode of the first triode, a base electrode of the first triode, a collecting electrode of the first triode, a base electrode of the second triode and a collecting electrode of the second triode are connected together, the emitting electrode of the second triode is connected with one end of the first resistor, and the other end of the first resistor is connected with the other end of the second resistor and an non-inverting input end of the operational amplifier.
The second-order temperature compensation band gap reference circuit insensitive to operational amplifier offset comprises a fourth resistor, a fifth resistor and a third triode, wherein one end of the fourth resistor is connected with an emitting electrode of the first triode, the other end of the fourth resistor is connected with one end of the fifth resistor and an emitting electrode of the third triode together and is connected with a reference current, the other end of the fifth resistor is connected with a non-inverting input end of an operational amplifier, and a base electrode of the third triode and a collector electrode of the third triode are connected together and are connected to a base electrode of the first triode.
The operational amplifier comprises a fifteenth MOS tube, a sixteenth MOS tube, a seventeenth MOS tube and an eighteenth MOS tube, wherein the source electrode of the fifteenth MOS tube is connected with the source electrode of the sixteenth MOS tube and connected with a reference current, the grid electrode of the fifteenth MOS tube is used as the inverting input end of the operational amplifier, the drain electrode of the fifteenth MOS tube is connected with the drain electrode of the seventeenth MOS tube, the grid electrode of the seventeenth MOS tube and the grid electrode of the eighteenth MOS tube and used as the V-shaped input end of the operational amplifier 02 The grid electrode of the sixteenth MOS tube is used as the non-inverting input end of the operational amplifier, the drain electrode of the sixteenth MOS tube is connected with the drain electrode of the eighteenth MOS tube and used as the V of the operational amplifier 01 And the source electrode of the seventeenth MOS tube is connected with the source electrode of the eighteenth MOS tube.
The second-order temperature compensation band gap reference circuit insensitive to operational amplifier offset comprises a second MOS tube, a third MOS tube, a fourth MOS tube, a fifth MOS tube, a sixth MOS tube and a seventh MOS tube, wherein the source electrodes of the second MOS tube and the third MOS tube are connected with a power supply, the grid electrode of the second MOS tube, the grid electrode of the first MOS tube, the grid electrode of the third MOS tube, the drain electrode of the second MOS tube, the drain electrode of the fourth MOS tube and the drain electrode of the fifth MOS tube are connected together, the grid electrode of the fourth MOS tube is connected with a V-shaped operational amplifier 01 The source electrode of the fourth MOS tube is connected with the collector electrode of the second triode, the source electrode of the fifth MOS tube is grounded, and the source electrode of the fifth MOS tube is connected with the output portThe grid electrode of the seventh MOS tube is connected with the drain electrode of the seventh MOS tube, the drain electrode of the seventh MOS tube is connected with a power supply through a resistor, the source electrode of the seventh MOS tube is grounded, the grid electrode of the seventh MOS tube, the grid electrode of the sixth MOS tube, the drain electrode of the sixth MOS tube and the drain electrode of the third MOS tube are connected together, and the source electrode of the sixth MOS tube is grounded.
The second-order temperature compensation band gap reference circuit insensitive to operational amplifier offset comprises an eighth MOS transistor, a ninth MOS transistor, a tenth MOS transistor, an eleventh MOS transistor, a twelfth MOS transistor, a thirteenth MOS transistor, a fourteenth MOS transistor, a first phase inverter, a second phase inverter and a capacitor, wherein the grid electrode of the eighth MOS transistor is connected with a V-shaped end of an operational amplifier 02 The source electrode of the eighth MOS tube is grounded, the drain electrode of the eighth MOS tube, the drain electrode of the tenth MOS tube, the grid electrode of the tenth MOS tube and the grid electrode of the eleventh MOS tube are connected together, the source electrode of the tenth MOS tube is connected with the power supply, the source electrode of the eleventh MOS tube is connected with the power supply, the drain electrode of the eleventh MOS tube is connected with the drain electrode of the ninth MOS tube, and the grid electrode of the ninth MOS tube is connected with the V-shaped transistor of the operational amplifier 01 And the output end of the first phase inverter is connected with the drain electrode of the thirteenth MOS tube and the input end of the second phase inverter, the source electrode of the thirteenth MOS tube is connected with the drain electrode of the fifth MOS tube, the source electrode of the twelfth MOS tube is connected with the ground, the gate electrode of the thirteenth MOS tube is connected with the ground through a capacitor, the output end of the first phase inverter is connected with the drain electrode of the thirteenth MOS tube and the input end of the second phase inverter, the source electrode of the thirteenth MOS tube is connected with the drain electrode of the fourteenth MOS tube, the source electrode of the fourteenth MOS tube is connected with the ground, and the gate electrode of the fourteenth MOS tube is connected with the output end of the second phase inverter and serves as an enabling end of the reference starting completion circuit.
The invention has the beneficial effects that:
1. the offset introduced by the operational amplifier is only a direct current offset for the reference voltage, and has little influence on the temperature drift of the generated reference voltage; after the second-order temperature compensation circuit is adopted, the reference voltage with low temperature drift can be generated; after the power supply is powered on, the reference circuit enters a correct working point, and then the reference starting completion circuit sends a reference starting completion signal to serve as the enabling of other circuits applied to the system. The band gap reference circuit designed by the invention has the temperature drift as low as 2.5ppm, the operational amplifier imbalance has very little influence on the temperature drift performance, the circuit has high consistency under different process design environments, and the band gap reference circuit can provide accurate reference voltage for various high-precision signal processing circuits and signal reading circuits and has wide application prospect.
2. The offset current of the transistor is adjusted through the adjusting resistor, and the temperature drift coefficient of the reference voltage is indirectly adjusted, so that the offset voltage of the operational amplifier is only a direct current offset relative to the reference voltage, a first-order or high-order temperature coefficient relation does not exist, and the reference voltage can be adjusted to the optimal temperature drift coefficient only by once adjustment.
Drawings
Fig. 1 is a schematic diagram of a conventional bandgap reference circuit.
Fig. 2 is a graph showing a temperature simulation of a conventional bandgap reference voltage.
Fig. 3 is a block diagram of the circuit structure of the present invention.
Fig. 4 is a circuit diagram of a reference generation circuit and a start-up circuit of the present invention.
FIG. 5 is a circuit diagram of a second-order temperature compensation circuit according to the present invention.
FIG. 6 is a circuit diagram of an operational amplifier according to the present invention.
FIG. 7 is a second order temperature compensated bandgap reference voltage temperature simulation plot of the present invention.
FIG. 8 is a circuit diagram of a reference start-up completion circuit according to the present invention.
Detailed Description
The invention is further described below with reference to the figures and examples.
As shown in fig. 3, a second-order temperature compensation bandgap reference circuit insensitive to offset of an operational amplifier includes a reference generating circuit, a second-order temperature compensation circuit, an operational amplifier, a start circuit, and a reference start completion circuit, wherein the second-order temperature compensation circuit is connected to the reference generating circuit, the reference generating circuit is connected to the start circuit and the reference start completion circuit respectively after passing through the operational amplifier, and the start circuit is connected to the reference start completion circuit.
As shown in fig. 4, the reference generating circuit includes a first MOS transistor M1, a first triode Q1, a second triode Q2, a first resistor R1, a second resistor R2, and a third adjustable resistor R3, wherein the source of the first MOS transistor M1 is connected to the power supply, the drain of the first MOS transistor M1, one end of the second resistor R2, and one end of the third adjustable resistor R3 are connected together and used as the output end of the reference generating circuit to output the reference voltage V REF The other end of the third adjustable resistor R3 is connected with the inverting input end of the operational amplifier and the emitting electrode of the first triode Q1, the base electrode of the first triode Q1, the collecting electrode of the first triode Q1, the base electrode of the second triode Q2 and the collecting electrode of the second triode Q2 are connected together, the emitting electrode of the second triode Q2 is connected with one end of the first resistor R1, and the other end of the first resistor R1 is connected with the other end of the second resistor R2 and the non-inverting input end of the operational amplifier.
As shown in fig. 5, the second-order temperature compensation circuit includes a fourth resistor R4, a fifth resistor R5, and a third transistor Q3, wherein one end of the fourth resistor R4 is connected to the emitter of the first transistor Q1, and the other end of the fourth resistor R4 is connected to one end of the fifth resistor R5 and the emitter of the third transistor Q3 and is connected to the reference current I REF The other end of the fifth resistor R5 is connected with the non-inverting input end of the operational amplifier, and the base electrode of the third triode Q3 and the collector electrode of the third triode Q3 are connected together and connected to the base electrode of the first triode Q1.
As shown in fig. 6, the operational amplifier includes a fifteenth MOS transistor M15, a sixteenth MOS transistor M16, a seventeenth MOS transistor M17 and an eighteenth MOS transistor M18, wherein the source of the fifteenth MOS transistor M15 and the source of the sixteenth MOS transistor M16 are connected together and connected to the reference current I REF The grid of the fifteenth MOS transistor M15 is used as the inverting input terminal of the operational amplifier, and the drain of the fifteenth MOS transistor M15 is connected to the drain of the seventeenth MOS transistor M17, the grid of the seventeenth MOS transistor M17 and the grid of the eighteenth MOS transistor M18 to be used as the V of the operational amplifier 02 The grid electrode of the sixteenth MOS tube M16 is used as the non-inverting input end of the operational amplifier, the drain electrode of the sixteenth MOS tube M16 and the drain electrode of the eighteenth MOS tube M18 are connected together and used as the operational amplifierV 01 And the source electrode of the seventeenth MOS tube M17 and the source electrode of the eighteenth MOS tube M18 are connected together at the output port.
As shown in fig. 4, the start-up circuit includes a second MOS transistor M2, a third MOS transistor M3, a fourth MOS transistor M4, a fifth MOS transistor M5, a sixth MOS transistor M6, and a seventh MOS transistor M7, the sources of the second MOS transistor M2 and the third MOS transistor M3 are connected to the power supply, the gate of the second MOS transistor M2, the gate of the first MOS transistor M1, the gate of the third MOS transistor M3, the drain of the second MOS transistor M2, the drain of the fourth MOS transistor M4, and the drain of the fifth MOS transistor M5 are connected together, and the gate of the fourth MOS transistor M4 is connected to the V of the operational amplifier 01 And at an output port, the source electrode of the fourth MOS transistor M4 is connected with the collector electrode of the second triode Q2, the source electrode of the fifth MOS transistor M5 is grounded, the gate electrode of the fifth MOS transistor M5 is connected with the drain electrode of the seventh MOS transistor M7, the drain electrode of the seventh MOS transistor M7 is connected with the power supply through a resistor, the source electrode of the seventh MOS transistor M7 is grounded, the gate electrode of the seventh MOS transistor M7, the gate electrode of the sixth MOS transistor M6, the drain electrode of the sixth MOS transistor M6 and the drain electrode of the third MOS transistor M3 are connected together, and the source electrode of the sixth MOS transistor M6 is grounded.
As shown in fig. 7, the reference start-up completion circuit includes an eighth MOS transistor M8, a ninth MOS transistor M9, a tenth MOS transistor M10, an eleventh MOS transistor M11, a twelfth MOS transistor M12, a thirteenth MOS transistor M13, a fourteenth MOS transistor M14, a first inverter, a second inverter, and a capacitor, wherein a gate of the eighth MOS transistor M8 is connected to a V of the operational amplifier 02 The source electrode of the eighth MOS transistor M8 is grounded, the drain electrode of the eighth MOS transistor M8, the drain electrode of the tenth MOS transistor M10, the gate electrode of the tenth MOS transistor M10 and the gate electrode of the eleventh MOS transistor M11 are connected together, the source electrode of the tenth MOS transistor M10 is connected with the power supply, the source electrode of the eleventh MOS transistor M11 is connected with the power supply, the drain electrode of the eleventh MOS transistor M11 is connected with the drain electrode of the ninth MOS transistor M9, and the gate electrode of the ninth MOS transistor M9 is connected with the V of the operational amplifier 01 The output port is grounded at the source electrode of the ninth MOS transistor M9, the input end of the first phase inverter is connected with the drain electrode of the ninth MOS transistor M9, the drain electrode of the twelfth MOS transistor M12 and the grid electrode of the thirteenth MOS transistor M13, the grid electrode of the twelfth MOS transistor M12 is connected with the grid electrode of the fifth MOS transistor M5, the source electrode of the twelfth MOS transistor M12 is grounded, the grid electrode of the thirteenth MOS transistor M13 is grounded after passing through a capacitor, and the output end of the first phase inverter is connected with the drain electrode of the thirteenth MOS transistor M13 and the second inverseThe input end of the phase device is connected, the source electrode of the thirteenth MOS tube M13 is connected with the drain electrode of the fourteenth MOS tube M14, the source electrode of the fourteenth MOS tube M14 is grounded, and the grid electrode of the fourteenth MOS tube M14 is connected with the output end of the second phase inverter and is used as the enabling end REF 0K of the reference start-up completion circuit.
Different from the traditional band-gap reference, the band-gap reference circuit adjusts the temperature drift coefficient by adjusting the R3 to change the bias current of the transistor Q1 and the transistor Q2. Let the input offset voltage of the operational amplifier be V OS The current passing through R1 is PTAT current, and the magnitude is as follows:
difference between emitter voltages of transistor Q1 and transistor Q2, I 1 Is the collector current, I, of the transistor Q1 2 Is the collector current of the transistor Q2, then the band-gap reference voltage V REF Comprises the following steps:
the value of the resistor R3 is properly adjusted, so that the absolute values of the first-order temperature coefficients of the first term and the second term on the right side of the above formula are the same, and the offset voltage V of the middle operational amplifier os Will be only V REF The temperature drift coefficient of the reference voltage cannot be influenced by the direct current offset voltage.
The right circuit of fig. 4 is a start circuit, if the power is on, the bandgap reference is not normally started, and M3 and M6 have no current, so the gates of M6 and M7 are at a low potential, M7 is turned off, and simultaneously R3 pulls up Vstart, M5 is turned on, thereby pulling down the gate potentials of M1, M2 and M3, the bandgap reference circuit is forced to be pulled out of a zero state, when the reference is started, M7 mirrors the current of M6, thereby pulling down Vstart to a low potential, turning off M5, and the start circuit does not affect the normal operation of the bandgap reference.
When the high-order temperature coefficient of the transistor is considered, the base emitter voltage expression is as follows:
wherein V g0 Is a band gap reference voltage in an optimal state, V BE,Tr For a base emitter voltage of the transistor at 27 deg.C, tr is Kelvin temperature corresponding to 27 deg.C, and η is constant, V can be seen BE The higher order term of the temperature coefficient of (2) is positive, and the higher order positive temperature coefficient thereof can be compensated by the second order temperature compensation circuit shown in fig. 6. A reference current with a lower temperature coefficient is biased to a transistor triode Q3, and an emitter of the transistor Q3 is connected across a positive input end and a negative input end of the operational amplifier through resistors R4 and R5. Reference current I REF The reference current with lower temperature drift generated by a system standby circuit is a reference current with lower temperature drift, the temperature drift coefficient of the reference current can be higher than 20ppm, R4 and R5 adopt a ppoly resistor with lower negative temperature, and a band gap reference simulation circuit adopting second-order temperature compensation is shown in fig. 7, so that the reference voltage changes by about 0.4mV and the temperature drift coefficient is about 2.5ppm within the temperature range of-25 ℃ to 125 ℃, and the temperature drift coefficient is only 1/5 of that of the traditional band gap reference.
FIG. 8 shows a reference start-up completion circuit when V REF When the potential rises to the vicinity of the reference potential, the output V of the operational amplifier A 01 And V 02 The potentials are similar, since M10 is about 1/2 OF M11, the drain potential OF M11 will go high, REF _ OK is set to 1, REF \uOK can be used as an enable, and other circuit blocks OF the system are started, and M13 and M14 in FIG. 8 introduce hysteresis to prevent REF _ OF from being disturbed and jittering.
Claims (6)
1. A second-order temperature compensation band-gap reference circuit insensitive to operational amplifier offset is characterized in that: the temperature compensation circuit of the second order is connected with the reference generation circuit, the reference generation circuit is respectively connected with the starting circuit and the reference starting completion circuit after passing through the operational amplifier, and the starting circuit is connected with the reference starting completion circuit.
2. The operational amplifier offset insensitive second-order temperature-compensated bandgap reference circuit of claim 1, wherein: the reference generating circuit comprises a first MOS tube, a first triode, a second triode, a first resistor, a second resistor and a third adjustable resistor, wherein a source electrode of the first MOS tube is connected with a power supply, a drain electrode of the first MOS tube, one end of the second resistor and one end of the third adjustable resistor are connected together and used as an output end of the reference generating circuit, the other end of the third adjustable resistor is connected with an inverting input end of the operational amplifier, an emitting electrode of the first triode is connected, a base electrode of the first triode, a collecting electrode of the first triode, a base electrode of the second triode and a collecting electrode of the second triode are connected together, the emitting electrode of the second triode is connected with one end of the first resistor, and the other end of the first resistor is connected with the other end of the second resistor and a non-inverting input end of the operational amplifier.
3. The operational amplifier offset insensitive second order temperature compensated bandgap reference circuit of claim 2, wherein: the second-order temperature compensation circuit comprises a fourth resistor, a fifth resistor and a third triode, one end of the fourth resistor is connected with an emitting electrode of the first triode, the other end of the fourth resistor is connected with one end of the fifth resistor and an emitting electrode of the third triode together and is connected with reference current, the other end of the fifth resistor is connected with a non-inverting input end of the operational amplifier, and a base electrode of the third triode and a collector electrode of the third triode are connected together and are connected to a base electrode of the first triode.
4. The operational amplifier offset insensitive second order temperature compensated bandgap reference circuit of claim 3, wherein: the operational amplifier comprises a fifteenth MOS tube, a sixteenth MOS tube, a seventeenth MOS tube and an eighteenth MOS tube, wherein a source electrode of the fifteenth MOS tube is connected with a source electrode of the sixteenth MOS tube and is connected with a reference current, a grid electrode of the fifteenth MOS tube is used as an inverting input end of the operational amplifier, and a drain electrode of the fifteenth MOS tube is connected with a drain electrode of the seventeenth MOS tube, a grid electrode of the seventeenth MOS tube and a grid electrode of the eighteenth MOS tubeV combined together as an operational amplifier 02 The grid electrode of the sixteenth MOS tube is used as the non-inverting input end of the operational amplifier, the drain electrode of the sixteenth MOS tube is connected with the drain electrode of the eighteenth MOS tube and used as the V of the operational amplifier 01 And the source electrode of the seventeenth MOS tube is connected with the source electrode of the eighteenth MOS tube.
5. The operational amplifier offset insensitive second order temperature compensated bandgap reference circuit of claim 4, wherein: the starting circuit comprises a second MOS tube, a third MOS tube, a fourth MOS tube, a fifth MOS tube, a sixth MOS tube and a seventh MOS tube, the source electrodes of the second MOS tube and the third MOS tube are connected with a power supply, the grid electrode of the second MOS tube, the grid electrode of the first MOS tube, the grid electrode of the third MOS tube, the drain electrode of the second MOS tube, the drain electrode of the fourth MOS tube and the drain electrode of the fifth MOS tube are connected together, the grid electrode of the fourth MOS tube is connected with the V-shaped transistor of the operational amplifier 01 And the source electrode of the fourth MOS tube is connected with the collector electrode of the second triode, the source electrode of the fifth MOS tube is grounded, the grid electrode of the fifth MOS tube is connected with the drain electrode of the seventh MOS tube, the drain electrode of the seventh MOS tube is connected with the power supply through a resistor, the source electrode of the seventh MOS tube is grounded, the grid electrode of the seventh MOS tube, the grid electrode of the sixth MOS tube, the drain electrode of the sixth MOS tube and the drain electrode of the third MOS tube are connected together, and the source electrode of the sixth MOS tube is grounded.
6. The operational amplifier offset insensitive second order temperature compensated bandgap reference circuit of claim 5, wherein: the reference start-up completion circuit comprises an eighth MOS tube, a ninth MOS tube, a tenth MOS tube, an eleventh MOS tube, a twelfth MOS tube, a thirteenth MOS tube, a fourteenth MOS tube, a first phase inverter, a second phase inverter and a capacitor, wherein the grid electrode of the eighth MOS tube is connected with the V of the operational amplifier 02 The source electrode of the eighth MOS tube is grounded, the drain electrode of the eighth MOS tube, the drain electrode of the tenth MOS tube, the grid electrode of the tenth MOS tube and the grid electrode of the eleventh MOS tube are connected together, the source electrode of the tenth MOS tube is connected with the power supply, the source electrode of the eleventh MOS tube is connected with the power supply, the drain electrode of the eleventh MOS tube is connected with the drain electrode of the ninth MOS tube, and the grid electrode of the ninth MOS tube is connected with the operation tubeV of operational amplifier 01 And the output end of the first phase inverter is connected with the drain electrode of the thirteenth MOS tube and the input end of the second phase inverter, the source electrode of the thirteenth MOS tube is connected with the drain electrode of the fifth MOS tube, the source electrode of the twelfth MOS tube is connected with the ground, the gate electrode of the thirteenth MOS tube is connected with the ground through a capacitor, the output end of the first phase inverter is connected with the drain electrode of the thirteenth MOS tube and the input end of the second phase inverter, the source electrode of the thirteenth MOS tube is connected with the drain electrode of the fourteenth MOS tube, the source electrode of the fourteenth MOS tube is connected with the ground, and the gate electrode of the fourteenth MOS tube is connected with the output end of the second phase inverter and serves as an enabling end of the reference starting completion circuit.
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| CN115425841A (en) * | 2022-11-03 | 2022-12-02 | 禹创半导体(深圳)有限公司 | Compensation circuit and control method and device thereof, electronic equipment and medium |
| CN115877908A (en) * | 2023-03-02 | 2023-03-31 | 盈力半导体(上海)有限公司 | Band gap voltage reference circuit and second-order nonlinear correction circuit and chip thereof |
| CN116954296A (en) * | 2023-08-14 | 2023-10-27 | 无锡盛景微电子股份有限公司 | Low-power-consumption self-bias second-order compensation band-gap reference circuit |
| CN117055679A (en) * | 2023-10-10 | 2023-11-14 | 合肥奎芯集成电路设计有限公司 | Low-offset band-gap reference circuit and low-offset band-gap reference chip |
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| CN115425841A (en) * | 2022-11-03 | 2022-12-02 | 禹创半导体(深圳)有限公司 | Compensation circuit and control method and device thereof, electronic equipment and medium |
| CN115877908A (en) * | 2023-03-02 | 2023-03-31 | 盈力半导体(上海)有限公司 | Band gap voltage reference circuit and second-order nonlinear correction circuit and chip thereof |
| CN115877908B (en) * | 2023-03-02 | 2023-04-28 | 盈力半导体(上海)有限公司 | Band gap voltage reference circuit, second-order nonlinear correction circuit and chip thereof |
| CN116954296A (en) * | 2023-08-14 | 2023-10-27 | 无锡盛景微电子股份有限公司 | Low-power-consumption self-bias second-order compensation band-gap reference circuit |
| CN117055679A (en) * | 2023-10-10 | 2023-11-14 | 合肥奎芯集成电路设计有限公司 | Low-offset band-gap reference circuit and low-offset band-gap reference chip |
| CN117055679B (en) * | 2023-10-10 | 2023-12-12 | 合肥奎芯集成电路设计有限公司 | Low-offset band-gap reference circuit and low-offset band-gap reference chip |
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