CN115128721B - 一种红外三波峰膜系结构及其制备工艺 - Google Patents
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Abstract
本发明涉及滤光片技术领域，且公开了一种红外三波峰膜系结构，其特征在于：包括基板、第一匹配膜系、主膜膜系、第二匹配膜系；所述主膜膜系依次由第一多层膜通带、耦合层、多层膜长波通带、耦合层、第二多层膜通带、第三多层膜通带组成。本发明公开了一种红外三波峰膜系，使其满足入射角在0°‑30°时折射偏移＜12nm的要求。
Description
技术领域
本发明涉及滤光片镀膜技术领域，具体为一种红外三波峰膜系结构及其制备工艺。
背景技术
由于市面上的红外产品，类似于红外监控设备的需求量增大，以及目前红外设备在市场上的单一性，红外三波峰可使红外设备加强接受效率和方便切换。目前市场需求入射角在0°-30°时折射偏移＜12nm的红外三波峰。但是还没有符合条件的此类产品。
发明内容
(一)解决的技术问题
针对现有技术的不足，本发明提供了一种红外三波峰膜系结构及其制备工艺。
(二)技术方案
一种红外三波峰膜系结构，包括基板、第一匹配膜系、主膜膜系、第二匹配膜系；所述主膜膜系依次由第一多层膜通带、耦合层、多层膜长波通带、耦合层、第二多层膜通带、第三多层膜通带组成，第一多层膜通带为3个的2H1.5L2H组成，耦合层为0.5L，多层膜长波通带为3个的2HL2H组成，第二多层膜通带为8个的2H0.5L组成，第三多层膜通带为6个的2H1.5L组成；第一匹配膜系为L 2.2H 0.3L；第二匹配膜系为2H1.5L；
其中H指氢化硅，L指氧化硅，数值指的是氢化硅或氧化硅四分之一波长的倍数，氢化硅的折射率在940nm时为3.6-3.7，氧化硅的折射率在940nm时为1.47-1.48。如1.5L是指氧化硅的1/4波长的1.5倍。
一种红外三波峰膜系结构的制备工艺，包括如下步骤：
1)底盘公转速度为180rpm，腔体温度为180℃，镀膜氢化硅，开启光控，镀膜功率为2000W到8500W，提升为3s，靶材充气，30-45sccmΑr，提升3s，15-25sccm H2，提升5s，制备出折射率在940nm时为3.6-3.7的氢化硅；
2)底盘公转速度为180rpm，腔体温度为180℃，镀膜氧化硅，开启光控同时离子源为开启状态，离子源功率为500-1600W，提升3s，镀膜功率为2000W，提升3s，离子源充气：20-25sccmΑr，提升2s，靶材充气：25-35sccmΑr，提升3s，10-15sccm O2，提升3s，制备出折射率在940nm时为1.47-1.48的氧化硅；
3)依次对膜层进行速率控制，制备相应厚度的膜层。
(三)有益效果
与现有技术相比，本发明以下有益效果：
发明了一种红外三波峰膜系，使其满足入射角在0°-30°时折射偏移＜12nm的要求。
附图说明
图1本发明的偏移量测试数据。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
实施例一
一种红外三波峰膜系结构，如下：
基板：L2.2H0.3L(2H1.5L2H)^3 0.5L(2HL2H)^3 0.5L(2H0.5L)^8(2H1.5L)^62H1.5L空气
其中L 2.2H 0.3L为第一匹配膜系；
主膜膜系有以下几层组成：
3个(2H1.5L2H)组成的多层膜通带
0.5L耦合层
3个(2HL2H)组成的多层膜长波通带
0.5L耦合层
8个(2H0.5L)组成的多层膜通带
6个(2H1.5L)组成的多层膜通带
2H1.5L为第二匹配膜系。
L指SIO2，H指氢化硅。1.5L是SIO2的1/4波长的1.5倍。
氢化硅的折射率在940nm时为3.6-3.7，氧化硅的折射率在940nm时为1.47-1.48。
实施例二
一种红外三波峰膜系结构的制备工艺，包括如下步骤：
1)底盘公转速度为180rpm，腔体温度为180℃，镀膜氢化硅，开启光控，镀膜功率为2000W到8500W，提升为3s，靶材充气，30-45sccmΑr，提升3s，15-25sccm H2，提升5s，制备出折射率在940nm时为3.6-3.7的氢化硅；
2)底盘公转速度为180rpm，腔体温度为180℃，镀膜氧化硅，开启光控同时离子源为开启状态，离子源功率为500-1600W，提升3s，镀膜功率为2000W，提升3s，离子源充气：20-25sccmΑr，提升2s，靶材充气：25-35sccmΑr，提升3s，10-15sccm O2，提升3s，制备出折射率在940nm时为1.47-1.48的氧化硅；
3)依次对膜层进行速率控制，制备相应厚度的膜层。
由于常规介质材料在可见光是透过的，低折射率有Sio2，高折射有Tio2/Tα2o5/Nb2o5等材料，限制了滤光片的性能提高，无法实现入射角在0°-30°时的偏移＜12nm，只能在40nm左右，严重影响图像在大角的情况的识别度和灵敏度，使用氢化硅加氧化硅的膜系设计可以大大的提高性能。
氢化硅具备很高的折射率，在940nm达到3.6-3.7，氧化硅折射率在940nm在1.47-1.48，存在很大的折射率差异，通过特殊设计使其具备0°-30°的偏移＜12nm，且氢化硅在可见光具有吸收，很好的为减轻设计对截止要求。
设计时将若干个1/4波长的多层膜系叠加在滤光片上形成短波通带和长波通带,经过3次重复调整波长位置，那么最后的组合将具有所希望的3波峰特性：即在中心波长处,反射率等于单纯1/4波长多层膜的反射率；而在中心波长的一边,反射率急剧地增加，这将产生一个短波通带,其反射率被调整到稍稍低于反射膜本身的反射率,那么将得到长波通带曲线。如果要反射膜滤光片相组合,较为常用的结构是在短波通带和长波通带之间插人一个1/4波长层作为耦合层。
在无吸收的基片上镀以实际的单质介质膜时,其反射率在两个极值之间振荡。这两个极值相应于膜厚等于1/4波长的整数倍,当膜厚等于1/4波长的偶数倍,即1/2波长的整数倍时，因此反射在两个极值之间的数值就是膜层的反射率，加上振荡耦合层膜(一个虚设层)；当膜厚等于1/4波长的奇数倍时,取决于薄膜的折射率是高于或是低于基片的折射率,反射率将出现极大值或者极小值。因此,1/4波长的偶数倍和1/4波长的奇数倍配合使带通内会出现的特定波纹，通过特殊设计结合获取折射率的工艺条件，使其具备在入射角为0°-30°的偏移＜12nm。
本发明的偏移量测试数据如图1所示。
Claims (1)
1.一种红外三波峰膜系结构，其特征在于：包括基板、第一匹配膜系、主膜膜系、第二匹配膜系；所述主膜膜系依次由第一多层膜通带、耦合层、多层膜长波通带、耦合层、第二多层膜通带、第三多层膜通带组成，第一多层膜通带为3个的2H1.5L2H组成，耦合层为0.5L，多层膜长波通带为3个的2HL2H组成，第二多层膜通带为8个的2H0.5L组成，第三多层膜通带为6个的2H1.5L组成；第一匹配膜系为L 2.2H 0.3L；第二匹配膜系为2H1.5L；该膜系结构为：基板L2.2H0.3L(2H1.5L2H)^30.5L(2HL2H)^3 0.5L(2H0.5L)^8(2H1.5L)^62H1.5L空气；
其中H指氢化硅，L指氧化硅，数值指的是氢化硅或氧化硅四分之一波长的倍数，氢化硅的折射率在940nm时为3.6-3.7，氧化硅的折射率在940nm时为1.47-1.48。
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