CN115108550A - Modification treatment method for reducing defects in graphite film surface - Google Patents
Modification treatment method for reducing defects in graphite film surface Download PDFInfo
- Publication number
- CN115108550A CN115108550A CN202210843651.1A CN202210843651A CN115108550A CN 115108550 A CN115108550 A CN 115108550A CN 202210843651 A CN202210843651 A CN 202210843651A CN 115108550 A CN115108550 A CN 115108550A
- Authority
- CN
- China
- Prior art keywords
- graphite film
- treatment
- microwave
- reducing
- microwave treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/20—Graphite
- C01B32/21—After-treatment
Abstract
A modification treatment method for reducing the in-plane defects of a graphite film relates to a modification treatment method for the graphite film surface, and aims to reduce the content of amorphous carbon and C-O-C functional groups on the graphite film surface, reduce the defect degree of the graphite film at the fold position, and improve the graphitization degree of the graphite film, thereby achieving the effect of improving the thermal conductivity of the graphite film. The method comprises the following steps: cutting a graphite film, placing the cut graphite film in a solvent, flatly paving the graphite film, completely wetting the graphite film by using acetone, then carrying out ultrasonic treatment, and drying the graphite film to constant weight; performing microwave treatment once or performing microwave treatment twice. The method can reduce the content of amorphous carbon on the surface and realize self-cleaning of the surface near the edge of the graphite film, and reduce the surface defects of the graphite film, and the modification method has simple operation and short modification period.
Description
Technical Field
The invention relates to a modification treatment method for reducing defects in a graphite film surface
Background
As the heart of the electronics industry, the semiconductor industry has been developing in recent decades following moore's law towards high performance, miniaturization and integration, and the increase in power consumption and reduction in volume have challenged the heat dissipation of electronic products. Efficient heat output is therefore a critical issue that is unavoidable in electronic package design. Heat dissipation technology is becoming a bottleneck limiting the development of electronic technology.
In application, the thermal management material has increasing requirements on thermal expansion performance, thermal conductivity, processability, light weight and the like. The materials mainly applied as heat management materials at present are metals, ceramics, carbon materials and the like, wherein the metal materials have high thermal conductivity, but the thermal expansion coefficient and the density are relatively high; ceramic materials, although having a low coefficient of thermal expansion, are brittle and therefore complicated and expensive to produce and manufacture. Wherein the carbon material is focused by researchers through higher thermal conductivity and lower density.
In all thermal power devices, thermal diodes, thermal rectifiers, thermal modulators, etc. have two-dimensional heat dissipation application requirements. The heat dissipation of the two-dimensional material has a difference in the XY direction and the Z direction, wherein most of the two-dimensional heat dissipation materials need high thermal conductivity in the XY direction to ensure that heat can be quickly transferred out. The graphite film is a carbon material having a graphite structure intact in two dimensions, and this unique structure ensures high thermal conductivity in the in-plane (XY) direction. The thermal conductivity of the graphite film is related to the density, thickness, graphitization degree, graphite film defect degree and orientation degree of graphite sheet layers of the graphite film. The graphite film with high graphitization degree is generally obtained by pressurizing, heating and carbonizing an organic polymer film (polyimide PI) with high directionality under the protection of inert gas, and then carrying out high-temperature graphitization treatment. The graphite film prepared in this way has a high graphitization degree and a low defect degree, but the surface of the graphite film generates wrinkles, and amorphous carbon with a large sheet diameter and oxygen-containing functional groups exist in the wrinkles, wherein the thermal conductivity of the amorphous carbon is only 400W/(m.K), which is far lower than that of the graphite film, and the thermal conductivity of the graphite film has a large influence.
Disclosure of Invention
The invention aims to provide a modification treatment method for reducing in-plane defects of a graphite film, which reduces the contents of amorphous carbon and C-O-C functional groups on the surface of the graphite film, reduces the defect degree of folds of the graphite film, and improves the graphitization degree of the graphite film, thereby achieving the effect of improving the thermal conductivity of the graphite film.
The modification treatment method for reducing the defects in the graphite film surface is carried out according to the following steps:
cutting of graphite film
Cutting a graphite film and placing the cut graphite film in a solvent to uniformly spread the graphite film;
the solvent is absolute ethyl alcohol or acetone;
ultrasonic treatment with acetone
Flatly paving the graphite film obtained in the step one, completely wetting the graphite film by using acetone, then carrying out ultrasonic treatment, and finally drying the graphite film to constant weight;
the power of ultrasonic treatment is 200-400W, and the ultrasonic treatment time is 10-60 s;
thirdly, carrying out microwave treatment once or twice;
the primary microwave treatment process comprises the following steps: transferring the graphite film obtained in the step two to a microwave oven for high-power short-time first microwave treatment, and then taking out the graphite film after cooling; the graphite film is smoothly spread in the process of transferring to a microwave oven so as to avoid burning out the graphite film due to concentrated point discharge;
the power of the microwave oven during the primary microwave treatment is 800-1000W, and the frequency is 2450 MHz;
the time for the primary microwave treatment is 2-6 s;
the two microwave treatment processes are as follows: carrying out low-power long-time secondary microwave treatment on the graphite film subjected to the primary microwave treatment, and taking out the graphite film after the graphite film is cooled;
the power of the microwave oven during the secondary microwave treatment is 500-800W, and the frequency is 2450 MHz;
the time for the secondary microwave treatment is 6-10 s.
The invention has the following beneficial effects:
1. the method adopts acetone to carry out ultrasonic treatment on the graphite film, and the polarity of the acetone is very similar to that of the amorphous carbon, so that the acetone can effectively disperse the amorphous carbon, the amorphous carbon with large sheet diameter is dispersed into the amorphous carbon with smaller sheet diameter, and the amorphous carbon with smaller sheet diameter is dissolved in the acetone to realize the reduction of the content of the amorphous carbon at the surface.
2. In the invention, microwave radiation causes the surface of the graphite film to generate an electromagnetic induction phenomenon, so that charges in the graphite film move directionally, thereby generating vortex and point discharge phenomena at the edge of the graphite film, and the charges at the edge of the graphite film have an adsorption effect on fine objects such as dispersed amorphous carbon and the like, and show a self-cleaning phenomenon on the surface near the edge of the graphite film.
3. In the invention, microwave radiation enables charges to move in a specific direction in a graphite film, so that C-C bond state stretching vibration of chemical bonds in the graphite film is caused, stretching vibration with different frequencies is generated in chemical bond states of other impurity bond states such as C-O bonds, C-O-C functional groups and the like which cause the shift of the charge center of the graphite film, and under the action of larger heat generated by microwave induced current, the purposes of reducing C-O, C-O, C-O-C functional groups and the like and reducing the surface defects of the graphite film are achieved.
4. In the invention, under microwave radiation, the surface of the graphite film can generate a large amount of Joule heat due to induced current, the graphite film can be rapidly heated, and the oxidation temperature of the amorphous carbon is lower than that of pure graphite, so that the amorphous carbon can be oxidized and removed at high temperature on the premise of keeping the integrity of the graphite film, the quantity of the amorphous carbon on the surface of the graphite film is greatly reduced, and the influence of the amorphous carbon on the thermal conductivity can be effectively reduced.
5. In the invention, the high temperature generated by microwave radiation can improve the crystal grain size of the crystal face of the graphite film, improve the graphitization degree of the graphite film and reduce the defect degree of a corrugated area of the graphite film.
6. The graphite film modification method is simple to operate, short in modification period and capable of achieving batch production, and is a modification means capable of quickly and effectively reducing the surface defects of the graphite film.
Drawings
FIG. 1 is an O1S peak in an XPS spectrum of a graphite film before and after acetone ultrasonic and microwave modification in example 1;
FIG. 2 is a Raman spectrum of a corrugated area of the graphite film before and after microwave modification treatment of the graphite film in example 1;
fig. 3 is an XRD pattern of the graphite film before and after being modified by acetone ultrasound and microwave in example 1.
The following examples are employed to demonstrate the beneficial effects of the present invention
Detailed Description
The technical scheme of the invention is not limited to the specific embodiments listed below, and any reasonable combination of the specific embodiments is included.
The first embodiment is as follows: the modification treatment method for reducing the defects in the graphite film surface in the embodiment is carried out according to the following steps:
cutting of graphite film
Cutting a graphite film and placing the cut graphite film in a solvent to uniformly spread the graphite film; preventing it from curling and introducing defects.
The solvent is absolute ethyl alcohol or acetone;
ultrasonic treatment with acetone
Flatly paving the graphite film obtained in the step one, completely wetting the graphite film by using acetone, then carrying out ultrasonic treatment, and finally drying the graphite film to constant weight;
the power of ultrasonic treatment is 200-400W, and the ultrasonic treatment time is 10-60 s;
thirdly, carrying out microwave treatment once or twice;
the primary microwave treatment process comprises the following steps: transferring the graphite film obtained in the step two to a microwave oven for high-power short-time first microwave treatment, and then taking out the graphite film after cooling; the graphite film is smoothly spread in the process of transferring to a microwave oven so as to avoid burning out the graphite film due to concentrated point discharge;
the power of the microwave oven during the primary microwave treatment is 800-1000W, and the frequency is 2450 MHz;
the time for the primary microwave treatment is 2-6 s;
the two microwave treatment processes are as follows: carrying out low-power long-time secondary microwave treatment on the graphite film subjected to the primary microwave treatment, and taking out the graphite film after the graphite film is cooled;
the power of the microwave oven during the secondary microwave treatment is 500-800W, and the frequency is 2450 MHz;
the time for the secondary microwave treatment is 6-10 s.
The embodiment has the following beneficial effects:
1. in the embodiment, the graphite film is subjected to ultrasonic treatment by using acetone, and the polarity of the acetone is very similar to that of the amorphous carbon, so that the acetone can effectively disperse the amorphous carbon, the amorphous carbon with large sheet diameter is dispersed into the amorphous carbon with smaller sheet diameter, and the amorphous carbon with smaller sheet diameter is dissolved in the acetone, so that the content of the amorphous carbon at the surface is reduced.
2. In this embodiment, microwave radiation makes the graphite membrane surface produce the electromagnetic induction phenomenon for the inside charge of graphite membrane directional movement, thereby produces vortex and point discharge phenomenon at graphite membrane edge, and the department charge at graphite membrane edge has the adsorption effect to tiny object like the amorphous carbon of dispersion etc. shows as a kind of phenomenon to near surface automatically cleaning of graphite membrane edge.
3. In the present embodiment, microwave radiation causes charges to move in a specific direction in the graphite film, which causes C-C bond state stretching vibration of chemical bonds in the graphite film, and stretching vibration of different frequencies is generated in chemical bond states in which other impurity bond states, such as C-O bonds, C ═ O bonds, C-O-C functional groups, etc., cause shift of the center of charges in the graphite film, so that the purpose of reducing C-O, C ═ O, C-O-C functional groups, etc., bond states and reducing surface defects of the graphite film is achieved under the action of large heat generated by microwave induced current.
4. In the embodiment, under microwave radiation, the surface of the graphite film can also generate a large amount of joule heat due to induced current, the graphite film can be rapidly heated, and the oxidation temperature of the amorphous carbon is lower than the oxidation temperature of pure graphite, so that the amorphous carbon can be oxidized and removed at high temperature on the premise of keeping the integrity of the graphite film, the quantity of the amorphous carbon on the surface of the graphite film is greatly reduced, and the influence of the amorphous carbon on the thermal conductivity can be effectively reduced.
5. In the present embodiment, the high temperature generated by the microwave radiation increases the crystal grain size of the crystal face of the graphite film, increases the graphitization degree of the graphite film, and decreases the defect degree of the wrinkle region of the graphite film.
6. In the embodiment, the graphite film modification method is simple to operate, short in modification period and capable of achieving batch production, and is a modification means for quickly and effectively reducing the surface defects of the graphite film.
The second embodiment is as follows: the first difference between the present embodiment and the specific embodiment is: and step one, the graphite film is obtained by performing high-temperature graphitization treatment on the polyimide film.
The third concrete implementation mode: the first or second difference between the present embodiment and the specific embodiment is: in the first step, the average thickness of the graphite film is 20-30 μm.
The fourth concrete implementation mode: the difference between this embodiment mode and one of the first to third embodiment modes is: step one, the cutting shape of the graphite film can be rectangular or circular.
The fifth concrete implementation mode: the difference between this embodiment and one of the first to fourth embodiments is: and step two, the temperature in the drying process is 50-75 ℃, and the drying time is 2-10 h.
The sixth specific implementation mode: the difference between this embodiment and one of the first to fifth embodiments is: and step three, the cooling time of the secondary microwave treatment is 2-10 min.
The seventh embodiment: the difference between this embodiment and one of the first to sixth embodiments is: and step three, the power of the microwave oven during the primary microwave treatment is 800W, and the frequency is 2450 MHz.
The specific implementation mode is eight: the present embodiment differs from one of the first to seventh embodiments in that: and the time for one microwave treatment in the step three is 4 s.
The specific implementation method nine: the difference between this embodiment and the first to eighth embodiments is: and step three, the power of the microwave oven during the secondary microwave treatment is 500W, and the frequency is 2450 MHz.
The detailed implementation mode is ten: the present embodiment differs from one of the first to ninth embodiments in that: and the time for the secondary microwave treatment in the third step is 6 s.
Example 1:
the modification treatment method for reducing the in-plane defects of the graphite film comprises the following steps:
cutting of graphite film
Cutting the graphite film into 50 × 50mm square pieces, removing the surface plastic film, and placing the graphite film in absolute ethyl alcohol to uniformly spread the graphite film so as to prevent the graphite film from curling and introducing defects;
the graphite film is obtained by performing high-temperature graphitization treatment on a highly oriented polyimide film, and the average thickness of the graphite film is 20 micrometers;
ultrasonic treatment of acetone
Flatly paving the graphite film obtained in the step one in a beaker, pouring acetone into the beaker until the graphite film is completely wetted, and putting the beaker into an ultrasonic cleaning machine for ultrasonic treatment for 30s, wherein the power of the ultrasonic treatment is 200W; then taking out the graphite film, putting the graphite film into a vacuum drying oven, and drying the graphite film to constant weight at 60 ℃;
thirdly, carrying out one-time microwave treatment
Transferring the graphite film obtained in the step two into a microwave oven, ensuring smooth spreading to avoid point discharge concentration, performing microwave treatment for 4s under the conditions of 800W and 2450MHz, and taking out the graphite film after cooling;
the embodiment has the following beneficial effects:
after acetone ultrasonic treatment, the grain diameter of the amorphous carbon particles on the surface of the graphite film is reduced, and the amorphous carbon particles are dispersed in all places and do not agglomerate at the folds. The size of the amorphous carbon on the surface of the graphite film is further reduced after microwave treatment. FIG. 1 shows the peak of O1S in the XPS spectrum before and after the graphite film is modified by acetone ultrasound and microwave, and it can be found that the content of C-O-C functional groups on the surface of the graphite film after microwave treatment is reduced from 13.7% to 9.6%. FIG. 2 is a Raman spectrum of the corrugated area of the graphite film before and after microwave modification treatment, and comparison shows that the defect degree I of the corrugated area of the graphite film after microwave treatment D ：I G From 0.88 to 0.05. Fig. 3 is an XRD (X-ray diffraction) diagram of the graphite film before and after the graphite film is subjected to microwave modification treatment, and the calculation of the d (002) interplanar spacing according to the XRD test result shows that the graphitization degree of the graphite film is improved from 95.1% to 99.8%. After the diacetone ultrasonic treatment process of the step of example 1, the thermal conductivity of the graphite film is improved to 1481.9W/(m.K). The thermal conductivity of the graphite film after the microwave treatment of the third step of the example 1 is improved from 1481.9W/(m.K) to 1532.9W/(m.K).
Example 2:
the modification treatment method for reducing the in-plane defects of the graphite film comprises the following steps:
cutting of graphite film
Cutting the graphite film and the surface plastic film together to form 50 × 50mm square sheets, removing the surface plastic film, and placing the square sheets in absolute ethyl alcohol to uniformly spread the square sheets so as to prevent the square sheets from curling and introducing defects;
the average thickness of the graphite film obtained by performing high-temperature graphitization treatment on the highly-oriented polyimide film is 20 micrometers;
ultrasonic treatment of acetone
Flatly paving the graphite film obtained in the step one in a beaker, pouring acetone into the beaker until the graphite film is completely wetted, and putting the beaker into an ultrasonic cleaning machine for ultrasonic treatment for 60 seconds, wherein the power of the ultrasonic treatment is 200W; then taking out the graphite film, putting the graphite film into a vacuum drying oven, and drying the graphite film to constant weight at 60 ℃;
thirdly, carrying out one-time microwave treatment
Transferring the graphite film obtained in the second step into a microwave oven, ensuring smooth spreading to avoid point discharge concentration, performing microwave treatment for 2s under the conditions of 800W and 2450MHz, and taking out the graphite film after the graphite film is cooled;
the embodiment has the following beneficial effects:
after the treatment of acetone, the content of amorphous carbon on the surface of the graphite film is reduced, and the heat conductivity of the graphite film is improved to 1479.0W/(m.K). After microwave treatment, the total defect content of the graphite film is reduced, the amorphous carbon content is further reduced, the content of impurity bond states such as C-O is reduced, the C/O ratio measured by XPS is changed from 9.8 to 11.1, and the heat conductivity is improved from 1479.0W/(m.K) to 1524.0W/(m.K).
Example 3:
the modification treatment method for reducing the in-plane defects of the graphite film comprises the following steps:
cutting of graphite film
Cutting the graphite film into 50 x 80 rectangular sheets, and placing the sheets in acetone to uniformly spread the sheets so as to prevent the sheets from curling and introducing defects;
the graphite film is obtained by performing high-temperature graphitization treatment on a highly oriented polyimide film, and the average thickness of the graphite film is 23 mu m;
ultrasonic treatment with acetone
Putting the beaker with the acetone and the graphite film into an ultrasonic cleaning machine for ultrasonic treatment for 30s, wherein the ultrasonic power is 300W; then taking out the graphite film, putting the graphite film into a vacuum drying oven, and drying the graphite film to constant weight at 60 ℃;
thirdly, carrying out microwave treatment twice
Primary microwave treatment: transferring the graphite film obtained in the step two into a microwave oven, ensuring smooth spreading to avoid point discharge concentration, and performing microwave treatment for 2s under the conditions of 800W and 2450 MHz;
secondary microwave treatment: and (3) performing microwave treatment on the graphite film obtained by the primary microwave treatment for 6s under the conditions of 500W and 2450MHz, and taking out the graphite film after cooling.
The embodiment has the following beneficial effects:
after acetone ultrasonic treatment, the content of amorphous carbon on the surface of the graphite film is reduced, the heat conductivity of the graphite film is improved to 1528.5W/(m.K). After microwave treatment, the total defect content of the graphite film is reduced, the amorphous carbon content is further reduced, the content of impurity bond states such as C-O is reduced, and the heat conductivity of the graphite film is increased from 1528.5W/(m.K) to 1537.5W/(m.K).
Claims (10)
1. A modification treatment method for reducing in-plane defects of a graphite film is characterized by comprising the following steps: the modification treatment method for reducing the defects in the graphite film surface is carried out according to the following steps:
cutting of graphite film
Cutting a graphite film and placing the graphite film in a solvent to uniformly spread the graphite film;
the solvent is absolute ethyl alcohol or acetone;
ultrasonic treatment with acetone
Flatly paving the graphite film obtained in the step one, completely wetting the graphite film by using acetone, then carrying out ultrasonic treatment, and finally drying the graphite film to constant weight;
the power of ultrasonic treatment is 200-400W, and the ultrasonic treatment time is 10-60 s;
thirdly, carrying out microwave treatment once or twice;
the primary microwave treatment process comprises the following steps: transferring the graphite film obtained in the step two to a microwave oven for high-power short-time first microwave treatment, and then taking out the graphite film after cooling;
the power of the microwave oven during the primary microwave treatment is 800-1000W, and the frequency is 2450 MHz;
the time for the primary microwave treatment is 2-6 s;
the two microwave treatment processes are as follows: carrying out low-power long-time secondary microwave treatment on the graphite film subjected to the primary microwave treatment, and taking out the graphite film after the graphite film is cooled;
the power of the microwave oven during the secondary microwave treatment is 500-800W, and the frequency is 2450 MHz;
the time for the secondary microwave treatment is 6-10 s.
2. The modification treatment method for reducing the in-plane defects of the graphite film according to claim 1, characterized in that: step one, the graphite film is obtained by performing high-temperature graphitization treatment on the polyimide film.
3. The modification treatment method for reducing the in-plane defects of the graphite film according to claim 1, characterized in that: in the first step, the average thickness of the graphite film is 20-30 μm.
4. The modification treatment method for reducing the in-plane defects of the graphite film according to claim 1, characterized in that: step one, the graphite film is cut into a rectangular or round shape.
5. The modification treatment method for reducing the in-plane defects of the graphite film according to claim 1, characterized in that: and step two, the temperature in the drying process is 50-75 ℃, and the drying time is 2-10 h.
6. The modification treatment method for reducing the in-plane defects of the graphite film according to claim 1, characterized in that: and step three, the cooling time of the secondary microwave treatment is 2-10 min.
7. The modification treatment method for reducing the in-plane defects of the graphite film according to claim 1, characterized in that: and step three, the power of the microwave oven during the primary microwave treatment is 800W, and the frequency is 2450 MHz.
8. The modification treatment method for reducing the in-plane defects of the graphite film according to claim 1, characterized in that: and the time for one microwave treatment in the step three is 4 s.
9. The modification treatment method for reducing the in-plane defects of the graphite film according to claim 1, characterized in that: and step three, the power of the microwave oven during the secondary microwave treatment is 500W, and the frequency is 2450 MHz.
10. The modification treatment method for reducing the in-plane defects of the graphite film according to claim 1, characterized in that: and the time for the secondary microwave treatment in the step three is 6 s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210843651.1A CN115108550B (en) | 2022-07-18 | 2022-07-18 | Modification treatment method for reducing defects in graphite film surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210843651.1A CN115108550B (en) | 2022-07-18 | 2022-07-18 | Modification treatment method for reducing defects in graphite film surface |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115108550A true CN115108550A (en) | 2022-09-27 |
| CN115108550B CN115108550B (en) | 2023-02-28 |
Family
ID=83332990
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210843651.1A Active CN115108550B (en) | 2022-07-18 | 2022-07-18 | Modification treatment method for reducing defects in graphite film surface |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115108550B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101236138B1 (en) * | 2011-10-26 | 2013-02-22 | 전자부품연구원 | Method for graphene hybrid film using microwaves and intense pulsed light |
| CN103193222A (en) * | 2007-05-17 | 2013-07-10 | 株式会社钟化 | Graphite film and graphite composite film |
| CN110171823A (en) * | 2019-04-11 | 2019-08-27 | 华碳(重庆)新材料产业发展有限公司 | A kind of boron doping natural graphite heat dissipation film and preparation method thereof |
-
2022
- 2022-07-18 CN CN202210843651.1A patent/CN115108550B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103193222A (en) * | 2007-05-17 | 2013-07-10 | 株式会社钟化 | Graphite film and graphite composite film |
| KR101236138B1 (en) * | 2011-10-26 | 2013-02-22 | 전자부품연구원 | Method for graphene hybrid film using microwaves and intense pulsed light |
| CN110171823A (en) * | 2019-04-11 | 2019-08-27 | 华碳(重庆)新材料产业发展有限公司 | A kind of boron doping natural graphite heat dissipation film and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115108550B (en) | 2023-02-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105624445B (en) | A kind of graphene strengthens the preparation method of Cu-base composites | |
| CN108251076B (en) | Carbon nanotube-graphene composite heat dissipation film, and preparation method and application thereof | |
| CN105722375B (en) | A kind of graphene heat abstractor and preparation method thereof | |
| CN105482435B (en) | Three-dimensional drape shape graphene radiating slurry, its preparation method and application | |
| CN104129780B (en) | Graphene film and preparation method thereof | |
| TWI647176B (en) | High heat conduction heat dissipation composite film and preparation method thereof | |
| CN107164647A (en) | High heat conduction rigidity graphene/copper nano composite material fin and preparation method thereof | |
| CN109181654B (en) | Graphene-based composite heat-conducting film and preparation method and application thereof | |
| CN102755950A (en) | Method for preparing graphene coating and graphene coating prepared according to method | |
| WO2013185269A1 (en) | High thermal conductivity graphite heat sink enhanced with thermally conductive fiber and method for preparing same | |
| CN104023505A (en) | Method for preparing high thermal conductivity graphite film | |
| CN109318564B (en) | Method for preparing graphene heat-conducting film through self-assembly ultrasonic spraying | |
| CN106978149A (en) | The preparation method and heat sink material of light high heat conducting graphene-based heat sink material containing aluminium | |
| CN106083046A (en) | A kind of preparation method of Graphene/polyimides copolymerization heat conducting film | |
| CN107686109A (en) | A kind of preparation method of the double-deck carbon-based heat conduction film of high performance graphite graphene | |
| TWI720823B (en) | Manufacturing method of a capillary structure | |
| CN110760189A (en) | Different layer type Ti3C2Filled high-thermal-conductivity silicone grease thermal interface material and preparation method thereof | |
| CN107584203B (en) | Method for preparing gradient aluminum-silicon electronic packaging material by stirring friction surfacing | |
| CN106832926A (en) | Graphite mixture, graphite film for heat conduction and its preparation method and application | |
| Jin et al. | Preparation of spherical silica powder by oxygen–acetylene flame spheroidization process | |
| CN115108550B (en) | Modification treatment method for reducing defects in graphite film surface | |
| KR20200043033A (en) | Paste containing rice-ear-shaped Cu particles | |
| CN110540190A (en) | high-heat-conduction heat-dissipation composite film and preparation method thereof | |
| CN105925978B (en) | A kind of aluminum matrix composite substrate and preparation method thereof | |
| CN109722057B (en) | Graphene composite material with high thermal conductivity, preparation method and preparation device thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |