CN115106929A - Chemical mechanical polishing device for silicon carbide wafer - Google Patents
Chemical mechanical polishing device for silicon carbide wafer Download PDFInfo
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- CN115106929A CN115106929A CN202210907823.7A CN202210907823A CN115106929A CN 115106929 A CN115106929 A CN 115106929A CN 202210907823 A CN202210907823 A CN 202210907823A CN 115106929 A CN115106929 A CN 115106929A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/06—Other polishing compositions
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Abstract
The invention relates to the technical field of silicon carbide polishing, in particular to a chemical mechanical polishing device for a silicon carbide wafer, which comprises a polishing pad body, wherein an abrasive particle layer is fixed on the polishing pad body, and abrasive particles in the abrasive particle layer are uniformly distributed; the polishing solution comprises a Fenton reagent and is used for oxidizing the surface of the silicon carbide wafer; the driving device drives the silicon carbide wafer to polish on the abrasive particle layer; the electrochemical device comprises an anode and a cathode, and an electro-Fenton reaction system is formed by the anode and the cathode and a Fenton reagent in the polishing solution; polishing solution supply device. According to the invention, the polishing solution adopts a Fenton reagent and an aqueous solution, the Fenton reagent provides ferrous ions and hydrogen peroxide, the ferrous ions and the hydrogen peroxide participate in reaction and are reduced, the Fenton reagent is recycled through an electrochemical device, and then, an abrasive particle layer is deposited on the polishing pad body, and abrasive particles cannot enter the polishing solution.
Description
Technical Field
The invention relates to the technical field of silicon carbide polishing, in particular to a chemical mechanical polishing device for a silicon carbide wafer.
Background
The silicon carbide polishing solution adopted in the prior art has overlarge environmental burden, for example, in order to improve the dispersion stability of abrasive particles in the polishing solution, a dispersing agent needs to be added into the polishing solution, in the whole polishing process, the polishing solution needs to be continuously supplied, the polishing solution waste liquid continuously generated continuously is finally discharged into the natural environment, and the production and discharge of the dispersing agent inevitably causes environmental pollution. Silicon carbide is extremely hard and requires a long polishing time, and wear of the polishing pad is a considerable problem, and the polishing pad needs to be replaced periodically due to wear caused by friction between the polishing pad and abrasive grains, which undoubtedly results in an increase in the processing cost.
Chinese patent CN113334242A proposes to use the fenton method for chemical mechanical polishing of diamond wafers to increase the oxidation rate of the diamond surface. The Fenton process is one of the advanced oxidation techniques, and utilizes Fe 2+ Reacts with H2O2 to generate hydroxyl radical with strong oxidizing property, and greatly improves the oxidation rate of the wafer surface, although H 2 O 2 Is more environmentally friendly, but the cost of preparation, transportation and storage is higher, and the traditional Fenton method needs to be continuously supplemented with H 2 O 2 。
Disclosure of Invention
The invention aims at the problems and provides a chemical mechanical polishing device for a silicon carbide wafer.
The technical scheme adopted by the invention is as follows: a chemical mechanical polishing apparatus for a silicon carbide wafer, comprising:
the polishing solution comprises a Fenton reagent and is used for oxidizing the surface of the silicon carbide wafer;
the polishing pad is immersed in the polishing solution and is provided with an abrasive particle layer, and abrasive particles in the abrasive particle layer are uniformly distributed;
the driving device drives the silicon carbide wafer and utilizes the abrasive particle layer for polishing;
the electrochemical device comprises an anode and a cathode, and an electro-Fenton reaction system is formed by the anode and the cathode and a Fenton reagent in the polishing solution to provide an oxidant for the polishing solution;
a polishing liquid supply device that adds an acidic liquid to the polishing liquid;
and an aeration device is also arranged in the polishing solution and comprises an air blower and an aeration pipe, and the air blower provides oxygen to the polishing solution through the aeration pipe.
Optionally, the abrasive grains in the abrasive grain layer are one or more of diamond, boron carbide, silicon carbide, aluminum oxide, chromium oxide, zirconium oxide, silicon oxide, cerium oxide, iron oxide, yttrium oxide, copper oxide, and molybdenum oxide, and the polishing solution does not contain abrasive grains.
Optionally, the polishing pad comprises a polishing pad body and a polycrystalline wafer adhered to the surface of the polishing pad body, wherein the polycrystalline wafer comprises a substrate and a polycrystalline film located on the surface of the substrate, and the polycrystalline film is provided with abrasive particles.
Optionally, the polycrystalline film is formed by depositing abrasive particles on the surface of the substrate by using an electrochemical co-deposition technique, a chemical vapor deposition technique or a gumming thermosetting technique.
Optionally, the grain size range of the abrasive grains of the polycrystalline film is 0-400 nm, and the surface roughness of the polycrystalline film is 0-200 nm.
Optionally, the Fenton's reagent comprises ferrous ions and H 2 O 2 The concentration range of ferrous ions is 100-1200 mg/L, H 2 O 2 ：Fe 2 + is in the range of 4:1 to 8: 1.
Optionally, the driving device comprises a driving source, a telescopic mechanism and a silicon carbide wafer, the driving source is connected with the telescopic mechanism, the telescopic mechanism is connected with the silicon carbide wafer, the driving source provides power for rotation of the silicon carbide wafer, and the telescopic mechanism provides power for reciprocating motion of the silicon carbide wafer.
Optionally, the polishing pad comprises a polishing pad body and a colloidal abrasive particle layer located on the surface of the polishing pad body, the polishing pad body is a felt pad or a polymer felt pad, the surface of the polishing pad body is provided with fibers, the abrasive particle layer is a semisolid colloid, the semisolid colloid comprises colloid and abrasive particles, and the abrasive particles are uniformly distributed in the colloid.
Optionally, the polishing solution supplying device further comprises a peristaltic pump, a conduit and an acid solution source, wherein the acid solution source provides an acidic solution for the conduit, and the peristaltic pump controls the cross-sectional area of the conduit, so as to control the flow speed of the acidic solution in the conduit.
Optionally, the acidic solution is one or more of nitric acid, hydrochloric acid, phosphoric acid, metaphosphoric acid, oxalic acid, citric acid, malic acid, and tartaric acid.
The beneficial effects of the invention are: the polishing solution adopts a Fenton reagent, the Fenton reagent provides ferrous ions and hydrogen peroxide, and after the ferrous ions and the hydrogen peroxide participate in reaction and are reduced, the cyclic use of the Fenton reagent is realized through an electrochemical device without continuously supplementing the hydrogen peroxide; secondly, the abrasive particle layer is deposited on the polishing pad body, abrasive particles cannot enter polishing liquid, and in the application, the polishing liquid does not have the abrasive particles and does not generate waste liquid, so that the polishing liquid can be recycled, and the environment is really protected; meanwhile, the polishing solution supply device adds acid liquid into the Fenton reagent solution at a certain speed, and oxygen is added into the polishing solution through the air blower, so that the generation of iron hydroxide floccules in the polishing solution is prevented, and the substance conversion efficiency in the polishing solution can be accelerated.
Description of the drawings:
FIG. 1 is a schematic structural view of a chemical mechanical polishing apparatus for a silicon carbide wafer in an embodiment of the invention;
FIG. 2 is a schematic structural view of an aeration pipe provided with an aeration tank according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a configuration for providing an abrasive particle layer on a polishing pad body in accordance with an embodiment of the invention.
The figures are numbered:
1. a power source; 2. a metal disc; 3. a polishing pad body; 4. polishing solution; 5. a frame; 6 a silicon carbide wafer; 7. a balancing weight; 8. a peristaltic pump; 9. a conduit; 10. an acidic liquid; 11. a cathode; 12. an anode; 13. a power source; 14. a blower; 15. an aeration pipe; 16. a layer of abrasive particles; 17. polishing the tank body; 18. a drive source; 19. and (5) sealing rings.
The specific implementation mode is as follows:
the present invention will be described in detail below with reference to the accompanying drawings.
As shown in FIG. 1, the invention discloses a chemical mechanical polishing device for silicon carbide wafers, which is used for solving the problem that pollutants generated by polishing cause harm to the environment, and comprises:
the polishing solution 4, the polishing solution 4 comprises a Fenton reagent and is used for carrying out surface oxidation on the silicon carbide wafer 6;
the polishing pad body 3 is immersed in the polishing solution 4, an abrasive particle layer 16 is fixed on the polishing pad body 3, and abrasive particles in the abrasive particle layer 16 are uniformly distributed;
a driving device which drives the silicon carbide wafer 6 and polishes with the abrasive grain layer 16;
the electrochemical device comprises an anode and a cathode, and an electro-Fenton reaction system is formed by the anode and the cathode and a Fenton reagent in the polishing solution to provide an oxidant for the polishing solution;
the polishing solution replenishing device is used for adding the acidic liquid 10 into the polishing solution 4, and the adding speed of the acidic liquid 10 is controllable;
and an aeration device is also arranged in the polishing solution and comprises an air blower and an aeration pipe, and the air blower provides oxygen to the polishing solution through the aeration pipe.
In the embodiment of the invention, the chemical mechanical polishing device for the silicon carbide wafer comprises a frame 5, a polishing tank body 17, polishing liquid 4, a polishing pad body 3, a driving device, an electrochemical device, a polishing liquid supply device and an aeration device, wherein the polishing tank body 17 is arranged on the frame 5, the polishing liquid 4 is positioned in the polishing tank body 17, and the driving device, the electrochemical device, the polishing liquid supply device and the aeration device are all arranged on the frame.
The Fenton's reagent is a system with strong oxidizing property composed of hydrogen peroxide and ferrous ions, and the chemical reaction in the polishing solution 4 is Fe 2+ +H 2 O 2 +H + →Fe 3+ +H 2 O + OH, the hydroxyl radical of which has a strong oxidizing property, is used to oxidize the surface of the silicon carbide wafer 6 to form silicon oxide which is easily polished.
When the Fenton reagent is prepared, the reaction solution is mixed,the content of ferrous ion is 100-1200 mg/L, the ferrous ion is derived from ferrous sulfate and ferrous chloride, and H 2 O 2 ：Fe 2+ In a molar ratio in the range of 4:1 to 8: 1.
In this example, the ferrous ion content was 800mg/L, H 2 O 2 ：Fe 2+ In a molar ratio of 5: 1.
during the operation of the electrochemical device, a reaction takes place between the anode 12 and the cathode 11, the reaction formula of the anode being Fe 2+ +H 2 O 2 +H + →Fe 3+ +H 2 O + OH, the reaction formula of the cathode is O 2 +2H + +2e - →H 2 O 2 ，Fe 3+ +e - →Fe 2+ Regeneration of H in the electro-Fenton reaction System 2 O 2 And is mixed with Fe 3+ To Fe 2+ And the cyclic use of the Fenton reagent is realized.
The acidic liquid is added into the polishing liquid 4 by a polishing liquid supply device to increase the H content in the polishing liquid + Can increase H 2 O 2 The preparation speed is high, and simultaneously, the generation of floccules such as ferric hydroxide is prevented. Meanwhile, the addition of oxygen to the polishing liquid 4 can increase H 2 O 2 The preparation speed of the Fenton reagent is high, and the cyclic use of the Fenton reagent is realized.
In another embodiment, the polishing solution further comprises Na 2 FeO 4 Na under acidic conditions 2 FeO 4 Has strong oxidizing property, and can oxidize C and Na in silicon carbide 2 FeO 4 Is reduced to Fe 3+ 、Fe 2+ And the polishing efficiency of the silicon carbide is accelerated. And Fe produced 2+ The catalyst of the Fenton reaction generates OH radicals with strong oxidizing property, and C of the silicon carbide is quickly oxidized, thereby further accelerating the polishing efficiency of the silicon carbide. Simultaneously using electro-Fenton reaction system to generate Fe 3+ To Fe 2+ And the recycle of the Fenton reagent is realized. Due to the addition of Na 2 FeO 4 The oxidizing power of the polishing solution is greater than that of the Fenton reagent, so that the polishing of the silicon carbide wafer with the front-stage unevenness is facilitated, and the Fenton reagent is adopted for continuously polishing the silicon carbide wafer in the follow-up processThe polishing is carried out, which is beneficial to improving the polishing uniformity and the polishing quality.
The polishing pad comprises a polishing pad body 3 and an abrasive particle layer 16 on the surface of the polishing pad body 3. In the present embodiment, the abrasive layer 16 is a polycrystalline wafer adhered to the surface of the polishing pad body 3, and the polycrystalline wafer includes a substrate and a polycrystalline film on the surface of the substrate, and the polycrystalline film has abrasive grains.
The base is one of a metal substrate, a silicon dioxide substrate, a sapphire substrate, a diamond substrate and a polyester fiber board, and abrasive particles are deposited on the surface of the base by utilizing an electrochemical co-deposition technology, a chemical vapor deposition technology or a gluing thermosetting technology to form the polycrystalline film.
The abrasive grains are one or more of diamond, boron carbide, silicon carbide, aluminum oxide, chromium oxide, zirconium oxide, silicon oxide, cerium oxide, iron oxide, yttrium oxide, copper oxide and molybdenum oxide, the grain size range of the polycrystalline film is 0-400 nm, the surface roughness of the polycrystalline film is 0-200 nm, and the polycrystalline film is used for grinding the silicon carbide wafer.
Because the abrasive layer of the polishing pad is fixed on the polishing pad, in this embodiment, the polishing solution 4 does not contain abrasive particles, no waste liquid is generated, and the polishing solution can be recycled.
In another embodiment, the abrasive particle layer 16 is formed by depositing abrasive particles on the polishing pad body 3 by a gluing thermosetting technique, using an intermediate polyester fiber board, directly adhering the polyester fiber board to the polishing pad body 3, and coating alumina particles on the polyester fiber board to form the abrasive particle layer 16.
In another embodiment, the polishing pad body is a felt pad or a polymer felt pad, the surface of the felt pad is provided with fibers, the abrasive particle layer is a semisolid gum, the semisolid gum comprises a gum body and abrasive particles, and the abrasive particles are uniformly distributed in the gum body.
Specifically, a sodium alginate solution is poured into a container, abrasive particles are added into the container, the abrasive particles and the sodium alginate solution are stirred to enable the abrasive particles to be uniformly distributed in the sodium alginate solution, then the sodium alginate solution containing the abrasive particles is dripped into a calcium chloride solution to form a sodium alginate solution and a calcium chloride solution, and the liquid in the sodium alginate solution and the calcium chloride solution is weak in fluidity and is in a colloidal state;
coating the prepared colloid on the surface of the polishing pad body, and uniformly distributing abrasive particles in the colloid on the surface of the polishing pad body;
heating the polishing pad body and the colloid together, drying the polishing pad body coated with the colloid, pressing the surface of the polishing pad body by using a heavy object in the drying process, so that the colloid on the surface of the polishing pad body is uniformly distributed, and finally colloidal abrasive particles are formed on the surface of the polishing pad body.
The polishing pad body is a felt pad or a polymer felt pad of the type Suba TM 、STT711 TM Or Pellon TM The surface of the felt pad or the polymer felt pad is of a fiber microstructure, semisolid jelly cannot penetrate into the inner layer of the polishing pad body, the compressibility and hardness of the polishing pad body are moderate, and after the polishing pad is manufactured, the silicon carbide wafer is ground by abrasive particles on the polishing pad body, so that damage to the polishing pad body is reduced. And because the polishing pad body is felt pad, has fibrous micro-structure, when sodium alginate and calcium chloride colloidal solution met with the fibre, adsorb tighter, increase polishing pad surface and semisolid jelly adhesion degree, at the polishing in-process, semisolid jelly is difficult for droing to can realize that the surface of polishing presents semi-fixedly, can not influence the used cycle of polishing solution.
In this embodiment, the driving device includes a driving source 18 and a telescopic mechanism, the driving source 18 includes a first motor, the telescopic mechanism includes an electric telescopic rod, a counterweight 7 and a silicon carbide wafer 6, an output end of the first motor is connected with the electric telescopic rod, the electric telescopic rod is connected with the counterweight 7, the counterweight 7 is connected with the silicon carbide wafer 6, the first motor provides power for rotation of the silicon carbide wafer 6, and the electric telescopic rod provides power for reciprocating motion of the silicon carbide wafer 6.
In this embodiment, the silicon carbide wafer 6 is rotated by the weight 7, and the silicon carbide wafer 6 is kept stable.
In this embodiment, polishing pad body 3 is connected with power supply 1, and power supply 1 includes the second motor, the rotation that polishing pad body 3 was given to the second motor provides power, the lower extreme fixedly connected with metal disc 2 of polishing pad body 3, metal disc 2 is connected with the pivot, and the pivot is connected with the output of second motor, is equipped with sealing washer 19 between pivot and the polishing cell body 17, and when the pivot rotated, sealing washer 19 was sealed to the bottom of polishing cell body 17, prevented that polishing solution 4 from revealing.
The power source 1 and the driving source 18 are located on two sides of the polishing pad body 3, and through parameter design of the first motor, the second motor and the electric telescopic rod, when the surface of the silicon carbide wafer 6 is in contact with the abrasive particle layer 16, the abrasive particle layer 16 polishes the surface of the silicon carbide wafer 6, the rotation speed of the polishing pad body 3 is 40-100 rpm, the rotation speed of the silicon carbide wafer 6 is 30-100 rpm, and the polishing pressure is 70-130 kgf.
In this embodiment, the electrochemical device further includes a power supply 13, the power supply 13 is a dc power supply, the positive electrode and the negative electrode of the dc power supply are respectively connected to the anode 12 and the cathode 11, the cathode 11 is made of one or more materials selected from a mercury electrode, a graphite electrode, a carbon felt, activated carbon fibers, foamed glass carbon, and carbon nanotubes, and the anode 12 is made of one or more materials selected from a mercury electrode, a graphite electrode, a titanium electrode, a platinum electrode, and an iron electrode.
In this embodiment, the cathode 11 and the anode 12 are made of graphite, and the electrode area is 100cm 2 The distance between the cathode 11 and the anode 12 is 1-10 cm, and the current density of the DC power supply is 2-40 mA/cm 2 。
In this example, the distance between the cathode 11 and the anode 12 was 3cm, and the current density of the DC power supply was 20mA/cm 2.
In this embodiment, the polishing liquid replenishing apparatus further includes a peristaltic pump 8, a conduit 9, and an acid liquid source, the acid liquid source provides an acidic liquid 10 for the polishing liquid through the conduit 9, and the peristaltic pump 8 controls the cross-sectional area of the conduit 9, so as to control the flow speed of the acidic liquid 10 in the conduit 9, thereby controlling the acidic liquid addition amount of the polishing liquid.
The acidic liquid is one or more of nitric acid, hydrochloric acid, phosphoric acid, metaphosphoric acid, oxalic acid, citric acid, malic acid and tartaric acid.
In this embodiment, the acidic liquid is oxalic acid aqueous solution with pH of 2-4, and the flow rate of oxalic acid aqueous solution is 0.1-1ml/min under the control of peristaltic pump 8.
In this embodiment, the aeration device includes an air blower 14 and an aeration pipe 15, the air blower 14 is installed on the side wall of the frame 5, the output end of the air blower 14 is connected to the aeration pipe, the air blower 14 provides oxygen to the polishing liquid 4 through the aeration pipe, and the oxygen reacts with the polishing liquid 4 to increase H 2 O 2 The production speed of (2) is used for the rapid oxidation of the surface of the silicon carbide wafer (6).
The air flow rate of the blower 14 is 0.1-10L/min.
In this embodiment, the aeration pipe 15 is disposed below the metal plate 2, oxygen generated by the aeration pipe 15 is delivered upward from the bottom of the polishing tank 17, the oxygen reacts with the polishing solution 4, the aeration pipe 15 and the acidic liquid 10 are in the same vertical plane, and the oxygen can rapidly contact with the acidic liquid 10.
As shown in fig. 2, the aeration pipe 15 is provided with a plurality of aeration openings to increase the contact area between the oxygen and the polishing liquid 4 and increase the reaction rate between the oxygen and the polishing liquid 4.
As shown in fig. 3, in the present embodiment, the polishing pad body 3 and the abrasive particle layer 16 are fixed together, and when the silicon carbide wafer 6 is polished by the abrasive particle layer 16, the abrasive particles in the abrasive particle layer 16 do not come off the polishing pad body 3, and contamination of the polishing liquid does not occur.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, and all equivalent structural changes made by using the contents of the present specification and the drawings, which are directly or indirectly applied to other related technical fields, are also included in the scope of the present invention.
Claims (10)
1. A chemical mechanical polishing apparatus for a silicon carbide wafer, comprising:
the polishing solution comprises a Fenton reagent and is used for carrying out surface oxidation on the silicon carbide wafer;
the polishing pad is immersed in the polishing solution and is provided with an abrasive particle layer, and abrasive particles in the abrasive particle layer are uniformly distributed;
the driving device drives the silicon carbide wafer and utilizes the abrasive particle layer for polishing;
the electrochemical device comprises an anode and a cathode, and an electro-Fenton reaction system is formed by the anode and the cathode and a Fenton reagent in the polishing solution to provide an oxidant for the polishing solution;
a polishing liquid supply device that adds an acidic liquid to the polishing liquid;
and an aeration device is also arranged in the polishing solution and comprises an air blower and an aeration pipe, and the air blower provides oxygen to the polishing solution through the aeration pipe.
2. The chemical mechanical polishing device for the silicon carbide wafer as claimed in claim 1, wherein the abrasive grains in the abrasive grain layer are one or more of diamond, boron carbide, silicon carbide, aluminum oxide, chromium oxide, zirconium oxide, silicon oxide, cerium oxide, iron oxide, yttrium oxide, copper oxide and molybdenum oxide, and the polishing solution does not contain abrasive grains.
3. The chemical mechanical polishing device for the silicon carbide wafer as claimed in claim 1, wherein the polishing pad comprises a polishing pad body and a polycrystalline wafer adhered to the surface of the polishing pad body, the polycrystalline wafer comprises a substrate and a polycrystalline film on the surface of the substrate, and the polycrystalline film has abrasive grains.
4. The chemical mechanical polishing device for the silicon carbide wafer as claimed in claim 3, wherein the polycrystalline film is formed by depositing abrasive grains on the surface of the substrate by using an electrochemical co-deposition technique, a chemical vapor deposition technique or a paste thermosetting technique.
5. The chemical mechanical polishing device for the silicon carbide wafer according to claim 3, wherein the grain size of the abrasive grains of the polycrystalline film is in the range of 0 to 400nm, and the surface roughness of the polycrystalline film is in the range of 0 to 200 nm.
6. The chemical mechanical polishing device for silicon carbide wafers as set forth in claim 1, wherein the Fenton's reagent comprises ferrous ions and H 2 O 2 The concentration range of ferrous ions is 100-1200 mg/L, H 2 O 2 ：Fe 2+ In a molar ratio in the range of 4:1 to 8: 1.
7. The chemical mechanical polishing device for the silicon carbide wafer as claimed in claim 1, wherein the driving means comprises a driving source, a retracting mechanism and the silicon carbide wafer, the driving source is connected with the retracting mechanism, the retracting mechanism is connected with the silicon carbide wafer, the driving source powers the rotation of the silicon carbide wafer, and the retracting mechanism powers the reciprocating movement of the silicon carbide wafer.
8. The chemical mechanical polishing device for the silicon carbide wafer as claimed in claim 1, wherein the polishing pad comprises a polishing pad body and a colloidal abrasive particle layer positioned on the surface of the polishing pad body, the polishing pad body is a felt pad or a polymer felt pad, the surface of the polishing pad body is provided with fibers, the abrasive particle layer is a semisolid colloid, the semisolid colloid comprises colloid and abrasive particles, and the abrasive particles are uniformly distributed in the colloid.
9. The chemical mechanical polishing device for silicon carbide wafers as claimed in claim 1, wherein said polishing liquid supply means further comprises a peristaltic pump, a conduit and an acid liquid source, said acid liquid source supplying an acid liquid to the conduit, said peristaltic pump controlling the cross-sectional area of the conduit and thereby controlling the flow rate of the acid liquid in the conduit.
10. The chemical mechanical polishing device for the silicon carbide wafer according to claim 9, wherein the acidic solution is one or more of nitric acid, hydrochloric acid, phosphoric acid, metaphosphoric acid, oxalic acid, citric acid, malic acid, tartaric acid.
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| CN202210907823.7A CN115106929A (en) | 2022-07-29 | 2022-07-29 | Chemical mechanical polishing device for silicon carbide wafer |
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| CN202210907823.7A CN115106929A (en) | 2022-07-29 | 2022-07-29 | Chemical mechanical polishing device for silicon carbide wafer |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115558427A (en) * | 2022-10-24 | 2023-01-03 | 浙江奥首材料科技有限公司 | Polishing solution based on micro-electrolysis-Fenton oxidation system, preparation method and application thereof |
| CN116160355A (en) * | 2023-04-19 | 2023-05-26 | 上海芯谦集成电路有限公司 | Heat dissipation polishing pad and preparation method thereof |
| CN116656243A (en) * | 2023-05-26 | 2023-08-29 | 无锡市恒利弘实业有限公司 | Silicon carbide wafer polishing solution |
| CN116984972A (en) * | 2023-08-10 | 2023-11-03 | 沈阳工业大学 | Grinding and polishing integrated method and device for diamond wafer |
| CN118143760A (en) * | 2024-05-11 | 2024-06-07 | 山东天岳先进科技股份有限公司 | Surface treatment method of diamond substrate |
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2022
- 2022-07-29 CN CN202210907823.7A patent/CN115106929A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115558427A (en) * | 2022-10-24 | 2023-01-03 | 浙江奥首材料科技有限公司 | Polishing solution based on micro-electrolysis-Fenton oxidation system, preparation method and application thereof |
| CN116160355A (en) * | 2023-04-19 | 2023-05-26 | 上海芯谦集成电路有限公司 | Heat dissipation polishing pad and preparation method thereof |
| CN116656243A (en) * | 2023-05-26 | 2023-08-29 | 无锡市恒利弘实业有限公司 | Silicon carbide wafer polishing solution |
| CN116656243B (en) * | 2023-05-26 | 2024-03-29 | 无锡市恒利弘实业有限公司 | Silicon carbide wafer polishing solution |
| CN116984972A (en) * | 2023-08-10 | 2023-11-03 | 沈阳工业大学 | Grinding and polishing integrated method and device for diamond wafer |
| CN116984972B (en) * | 2023-08-10 | 2024-03-26 | 沈阳工业大学 | Grinding and polishing integrated method and device for diamond wafer |
| CN118143760A (en) * | 2024-05-11 | 2024-06-07 | 山东天岳先进科技股份有限公司 | Surface treatment method of diamond substrate |
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