CN115101614B - perovskite/GaAs two-end mechanical laminated solar cell with MXene interconnection layer and preparation method thereof - Google Patents

perovskite/GaAs two-end mechanical laminated solar cell with MXene interconnection layer and preparation method thereof Download PDF

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CN115101614B
CN115101614B CN202210623194.5A CN202210623194A CN115101614B CN 115101614 B CN115101614 B CN 115101614B CN 202210623194 A CN202210623194 A CN 202210623194A CN 115101614 B CN115101614 B CN 115101614B
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CN115101614A (en
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朱卫东
巴延双
张春福
陈大正
张进成
郝跃
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Xidian University
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Abstract

The application discloses a perovskite/GaAs two-end mechanical laminated solar cell of an MXene interconnection layer and a preparation method thereof, comprising the following steps: perovskite solar cells, gaAs solar cells, and MXene interconnect layers; the perovskite solar cell comprises an ITO substrate and SnO distributed from bottom to top 2 Electron transport layer, perovskite photoactive layer, spiro hole transport layer, moO x The first surface of the ITO substrate comprises a cathode; the interconnection layer is located on one side of the Ag electrode far away from the ITO substrate, the GaAs solar cell is located on one side of the interconnection layer far away from the ITO substrate, and the GaAs solar cell comprises an anode. According to the application, the perovskite top battery and the GaAs bottom battery are electrically and optically coupled in a mechanical stacking manner, so that the efficiency damage of the GaAs solar battery is greatly reduced, and the efficiency of the laminated battery is improved. In addition, the MXene material is adopted as an interconnection layer, so that the GaAs solar cell and the perovskite solar cell are bonded more tightly, and the optical and electrical parasitic losses of the laminated cell are reduced.

Description

perovskite/GaAs two-end mechanical laminated solar cell with MXene interconnection layer and preparation method thereof
Technical Field
The application belongs to the technical field of semiconductors, and particularly relates to a perovskite/GaAs two-end mechanical laminated solar cell of an MXene interconnection layer and a preparation method thereof.
Background
The organic-inorganic hybrid perovskite material has been rapidly developed and applied due to its excellent photoelectric properties and low-cost preparation method, and in solar cell applications, single junction efficiency has reached 25.7%, which is close to the highest efficiency of currently mainstream GaAs-based solar cells. However, the highest efficiency of single junction cells is limited by the Shokrill-Kui-Joseph limit, and in order to further increase the efficiency of solar cells, the search for lamination processes is a necessary way of related work, where perovskite/GaAs laminated cells have received a great deal of attention.
perovskite/GaAs tandem solar cells can be divided into two-terminal and four-terminal stacks. Specifically, the four-terminal laminated battery needs to prepare two complete battery structures and press the two complete battery structures together through pressure, so that the process is complex, the cost is increased, and light loss is caused by excessively thick laminated structures, and the battery efficiency is greatly influenced. On the other hand, the perovskite layer is directly prepared on the GaAs battery by the laminated battery at two ends, and the problem of process, cost and efficiency loss caused by four-end lamination is effectively solved by the structure, however, the micron-scale fluctuation on the surface of the GaAs battery brings new difficulty for preparing the perovskite layer, a connecting layer is needed to be prepared between the perovskite and the GaAs battery in order to ensure the performance of the final laminated battery, and the design and optimization of the connecting structure become the difficulty of scientific research work; in addition, the high temperature and solution conditions associated with the preparation of the perovskite layer also provide challenges to the two-end lamination process to a certain extent for the efficiency damage of GaAs cells.
Disclosure of Invention
In order to solve the problems in the prior art, the application provides a perovskite/GaAs two-end mechanical laminated solar cell with an interconnection layer and a preparation method thereof. The technical problems to be solved by the application are realized by the following technical scheme:
in a first aspect, the present application provides a perovskite/GaAs two-terminal mechanically laminated solar cell of an MXene interconnect layer comprising: perovskite solar cells, gaAs solar cells, and MXene interconnect layers; wherein,
the perovskite solar cell includes:
an ITO substrate comprising a first surface;
SnO at said first surface 2 An electron transport layer;
located at the SnO 2 A perovskite photoactive layer on one side of the electron transport layer away from the ITO substrate;
the Spiro hole transport layer is positioned on one side of the perovskite photoactive layer, which is far away from the ITO substrate;
MoO on one side of the Spiro hole transport layer away from the ITO substrate x A transmission buffer layer;
is positioned at the MoO x An IZO conductive layer on one side of the transmission buffer layer far away from the ITO substrate;
an Ag electrode positioned on one side of the IZO conducting layer far away from the ITO substrate;
a cathode located on the first surface;
the interconnection layer is located on one side of the Ag electrode far away from the ITO substrate, the GaAs solar cell is located on one side of the interconnection layer far away from the ITO substrate, and the GaAs solar cell comprises an anode.
In one embodiment of the application, the interconnect layer comprises an MXene material.
In a second aspect, the application provides a method for preparing a perovskite/GaAs two-end mechanical stacked solar cell with an MXene interconnect layer, comprising:
providing an ITO substrate, wherein the ITO substrate comprises a first surface;
preparing SnO on the first surface 2 An electron transport layer;
at the SnO 2 Preparing a perovskite photoactive layer on one side of the electron transport layer far away from the ITO substrate;
preparing a Spiro hole transport layer on one side of the perovskite photoactive layer away from the ITO substrate;
preparing MoO on one side of the Spiro hole transport layer far away from the ITO substrate x A transmission buffer layer;
at the MoO x Preparing an IZO conductive layer on one side of the transmission buffer layer far away from the ITO substrate;
preparing an Ag electrode on one side of the IZO conducting layer far away from the ITO substrate, and preparing a cathode on the first surface to obtain a perovskite solar cell;
preparing an MXene interconnection layer on one side of the Ag electrode far away from the ITO substrate;
and providing a GaAs solar cell, and bonding the GaAs solar cell and the perovskite solar cell to obtain the perovskite/GaAs two-end mechanical laminated solar cell of the MXene interconnection layer.
In one embodiment of the application, the preparing of SnO at the first surface 2 An electron transport layer comprising:
80 mu L of SnO 2 Spin-coating the sol on the first surface of the ITO substrate in an air environment at a rotating speed of 3000rpm, and forming SnO after annealing treatment 2 An electron transport layer to obtain ITO/SnO 2 A substrate.
In one embodiment of the present application, the metal oxide is a metal oxide 2 A step of preparing a perovskite photoactive layer on a side of the electron transport layer remote from the ITO substrate, comprising:
the ITO/SnO 2 The substrate is placed in N 2 In the environment, and PbI 2 /PbCl 2 The mixed solution and the MAI/FAI mixed solution are sequentially spin-coated on the ITO/SnO 2 On the substrate;
spin-coating ITO/SnO 2 Placing the substrate on a heat table, annealing to form a perovskite photoactive layer to obtain ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 A substrate.
In one embodiment of the present application, the step of preparing a Spiro hole transport layer on a side of the perovskite photoactive layer remote from the ITO substrate includes:
the ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 The substrate is placed in N 2 After the environment, spin-coating the Spiro-OMeTAD solution on the ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 On the substrate;
spin-coating ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 Placing the substrate under room temperature to form a Spiro hole transport layer to obtain ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 A Spiro-OMeTAD substrate.
In one embodiment of the application, the MoO is prepared on the side of the Spiro hole transport layer away from the ITO substrate x A step of transmitting a buffer layer, comprising:
the ITO/SnO is formed by an evaporation process 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 Deposition on a Spiro-OMeTAD substrate to form MoO x Transmitting the buffer layer to obtain ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 /Spiro-OMeTAD/MoO x A substrate.
In one embodiment of the application, the method comprises the following steps of x A step of preparing an IZO conductive layer on a side of the transmission buffer layer away from the ITO substrate, comprising:
the magnetron sputtering technology is adopted to produce the ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 /Spiro-OMeTAD/MoO x Depositing IZO on the substrate to form an IZO conductive layer to obtain ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 /Spiro-OMeTAD/MoO x IZO substrate.
In one embodiment of the present application, the step of preparing an MXene interconnect layer on a side of the Ag electrode away from the ITO substrate includes:
a screen printing process is adopted to make the Ag electrode far awayDeposition of Nb on side from ITO substrate 2 CT x And (3) placing the Mxene conductive paste on a hot stage for annealing treatment to form the MXene interconnection layer.
In one embodiment of the present application, the step of providing a GaAs solar cell and bonding the GaAs solar cell to the perovskite solar cell to obtain a mechanically laminated perovskite/GaAs two-terminal solar cell of the MXene interconnect layer includes:
providing a GaAS solar cell, wherein the GaAS solar cell comprises an anode;
and placing an anode of the GaAs solar cell on the surface of one side of the MXene interconnection layer far away from the ITO substrate, and curing by using ultraviolet curing glue to realize the bonding of the GaAs solar cell and the perovskite solar cell, so as to obtain the perovskite/GaAs two-end mechanical laminated solar cell of the MXene interconnection layer.
Compared with the prior art, the application has the beneficial effects that:
the application provides a perovskite/GaAs two-end mechanical laminated solar cell with an interconnection layer and a preparation method thereof, and because the interconnection layer is directly prepared on the perovskite solar cell and the GaAs solar cell adopt a mechanical stacking bonding mode, compared with the existing two-end laminated solar cell process, the perovskite/GaAs two-end mechanical laminated solar cell has the advantages that no extra process is needed on the GaAs solar cell, the efficiency damage of the GaAs solar cell is greatly reduced, and the efficiency of the laminated solar cell is improved. In addition, the MXene material is adopted as the interconnection layer, so that the GaAs solar cell and the perovskite solar cell are bonded more tightly, and the optical and electrical parasitic losses of the laminated cell are reduced.
In addition, the perovskite/GaAs two-end mechanical laminated solar cell with the interconnection layer and the preparation method thereof have the advantages of low cost, easiness in implementation and easiness in repetition, balance between the preparation process and the cost is considered, and the perovskite/GaAs two-end mechanical laminated solar cell with the interconnection layer has strong application potential.
The present application will be described in further detail with reference to the accompanying drawings and examples.
Drawings
FIG. 1 is a schematic diagram of a structure of a perovskite/GaAs two-terminal mechanically-stacked solar cell with an MXene interconnect layer provided by an embodiment of the present application;
FIG. 2 is a flow chart of a method for fabricating a perovskite/GaAs two-terminal mechanical stack solar cell of an MXene interconnect layer provided by an embodiment of the application;
FIG. 3 is a schematic diagram of a method for fabricating a perovskite/GaAs two-terminal mechanical tandem solar cell of an MXene interconnect layer according to an embodiment of the present application;
FIG. 4 is a schematic diagram of a method for fabricating a perovskite/GaAs two-terminal mechanical tandem solar cell of an MXene interconnect layer according to an embodiment of the present application;
FIG. 5 is a schematic diagram of a method for fabricating a perovskite/GaAs two-terminal mechanical tandem solar cell of an MXene interconnect layer according to an embodiment of the present application;
FIG. 6 is a schematic diagram of a method for fabricating a perovskite/GaAs two-terminal mechanical stack solar cell of an MXene interconnect layer provided by embodiments of the application;
FIG. 7 is a schematic diagram of a method for fabricating a perovskite/GaAs two-terminal mechanical tandem solar cell of an MXene interconnect layer according to an embodiment of the present application;
FIG. 8 is a schematic diagram of a method for fabricating a perovskite/GaAs two-terminal mechanical stack solar cell of an MXene interconnect layer according to an embodiment of the application;
FIG. 9 is a schematic diagram of a method for fabricating a perovskite/GaAs two-terminal mechanical stack solar cell of an MXene interconnect layer according to an embodiment of the application;
FIG. 10 is a schematic diagram of a method for fabricating a perovskite/GaAs two-terminal mechanical stack solar cell with an MXene interconnect layer according to an embodiment of the application.
Detailed Description
The present application will be described in further detail with reference to specific examples, but embodiments of the present application are not limited thereto.
FIG. 1 is a schematic diagram of a structure of a perovskite/GaAs two-terminal mechanically stacked solar cell with an MXene interconnect layer provided by an embodiment of the application. As shown in fig. 1, an embodiment of the present application provides a perovskite/GaAs two-terminal mechanical stacked solar cell of an MXene interconnect layer, including: perovskite solar cells, gaAs solar cells, and interconnect layers; wherein,
the perovskite solar cell includes:
an ITO substrate including a first surface;
SnO at the first surface 2 An electron transport layer;
located in SnO 2 A perovskite photoactive layer on one side of the electron transport layer away from the ITO substrate;
a Spiro hole transport layer located on a side of the perovskite photoactive layer remote from the ITO substrate;
MoO on side of Spiro hole transport layer away from ITO substrate x A transmission buffer layer;
located at MoO x An IZO conductive layer on one side of the transmission buffer layer far away from the ITO substrate;
an Ag electrode positioned on one side of the IZO conducting layer far away from the ITO substrate;
a cathode located on the first surface;
the interconnection layer is located on one side of the Ag electrode far away from the ITO substrate, the GaAs solar cell is located on one side of the interconnection layer far away from the ITO substrate, and the GaAs solar cell comprises an anode.
Specifically, the perovskite/GaAs two-end mechanical stacked solar cell of the MXene interconnection layer provided by the embodiment of the present application includes: perovskite solar cells, gaAs solar cells, and interconnect layers; wherein, under the view angle shown in fig. 1, the perovskite solar cell comprises an ITO substrate and SnO which are distributed from bottom to top in sequence 2 Electron transport layer, perovskite photoactive layer, spiro hole transport layer, moO x The ITO substrate comprises a transmission buffer layer, an IZO conducting layer and an Ag electrode, wherein the upper surface, namely the first surface, of the ITO substrate further comprises a cathode;
further, the interconnection layer is located at a side of the Ag electrode away from the IZO conductive layer, the GaAs solar cell is located at a side of the interconnection layer away from the Ag electrode, and the GaAs solar cell includes an anode. It should be noted that, in this embodiment, the interconnection layer includes an MXene material, and the use of the MXene material as the mechanical interconnection layer can reduce the optical and electrical limitations on the connection layer of the sub-battery on the premise of maintaining the advantage of high efficiency of the conventional two-end stacked battery, and can solve the problem of the damage to the GaAs solar battery caused by the conditions of high temperature and solution in the two-end stacking process in the prior art. In addition, the MXene material has the characteristics of high conductivity, good light transmittance and the like, and is beneficial to reducing the optical loss and the electrical parasitic loss of the battery.
Fig. 2 is a flowchart of a method for preparing a perovskite/GaAs two-end mechanical stacked solar cell with an MXene interconnect layer according to an embodiment of the present application, and fig. 3 to 10 are schematic diagrams of a method for preparing a perovskite/GaAs two-end mechanical stacked solar cell with an MXene interconnect layer according to an embodiment of the present application. As shown in fig. 2 to 10, an embodiment of the present application provides a method for manufacturing a perovskite/GaAs two-end mechanical stacked solar cell with an MXene interconnect layer, including:
s1, providing an ITO substrate, wherein the ITO substrate comprises a first surface;
s2, preparing SnO on the first surface 2 An electron transport layer;
s3, at SnO 2 Preparing a perovskite photoactive layer on one side of the electron transport layer far away from the ITO substrate;
s4, preparing a Spiro hole transport layer on one side of the perovskite photoactive layer away from the ITO substrate;
s5, preparing MoO on one side of the Spiro hole transport layer far away from the ITO substrate x A transmission buffer layer;
s6, at MoO x Preparing an IZO conductive layer on one side of the transmission buffer layer far away from the ITO substrate;
s7, preparing an Ag electrode on one side of the IZO conducting layer, which is far away from the ITO substrate, and preparing a cathode on the first surface to obtain a perovskite solar cell;
s8, preparing an MXene interconnection layer on one side of the Ag electrode far away from the ITO substrate;
and S9, providing a GaAs solar cell, and bonding the GaAs solar cell and the perovskite solar cell to obtain the perovskite/GaAs two-end mechanical laminated solar cell of the MXene interconnection layer.
Specifically, in the step S1, firstly, the ITO glass substrate is sequentially put into Decon-90 aqueous solution, deionized water and absolute ethyl alcohol to be ultrasonically cleaned for 20min, and then the cleaned ITO substrate is put into a UV-Ozone to be treated for 15-30 min. Illustratively, the glass of the ITO substrate has a thickness of 0.5mm-1mm in a first direction, and the ITO conductive layer has a thickness of 50-200nm in the first direction, the first direction being perpendicular to the plane in which the ITO substrate lies.
Optionally, in the step S2, snO is prepared on the first surface 2 An electron transport layer comprising:
80 mu L of SnO 2 Spin-coating the sol on the first surface of the ITO substrate in an air environment at a rotating speed of 3000rpm, and forming SnO after annealing treatment 2 An electron transport layer to obtain ITO/SnO 2 A substrate.
In the preparation of SnO 2 In the course of the electron transport layer, 80. Mu.L of SnO 2 Directly spin-coating the sol on an ITO substrate subjected to UV-Ozone treatment in an air environment at a rotating speed of 3000rpm for 30 seconds, then placing the sol on a hot stage, and annealing for 30 minutes in an air atmosphere at 150 ℃ to form SnO 2 An electron transport layer. In this example, snO 2 The thickness of the electron transport layer is 50nm-100nm.
As shown in fig. 5, in the above step S3, snO 2 A step of preparing a perovskite photoactive layer on a side of the electron transport layer remote from the ITO substrate, comprising:
ITO/SnO 2 The substrate is placed in N 2 In the environment, and PbI 2 /PbCl 2 The mixed solution and MAI/FAI mixed solution are sequentially spin-coated on ITO/SnO 2 On the substrate;
spin-coating ITO/SnO 2 Placing the substrate on a heat table, annealing to form a perovskite photoactive layer to obtain ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 A substrate.
In this embodiment, the material of the perovskite photoactive layer includes MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 The perovskite photoactive layer may be prepared in a two-step process. First, ITO/SnO 2 The substrate is placed in a glove box N 2 In the environment, pbI is processed by using a spin coater 2 /PbCl 2 Spin-coating the mixed solution on ITO/SnO 2 On the substrate; subsequently, the MAI/FAI mixed solution is spin-coated on ITO/SnO 2 SubstrateOn the substrate, annealing the substrate in a heat table to form a perovskite photoactive layer to obtain ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 A substrate.
Of course, the present embodiment uses MA only 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 For example, in some other embodiments of the present application, other materials may be used to prepare the perovskite photoactive layer described above, as the present application is not limited in this regard.
Referring to fig. 6, in the step S4, a step of preparing a spira hole transport layer on a side of the perovskite photoactive layer away from the ITO substrate includes:
ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 The substrate is placed in N 2 After the environment, the Spiro-OMeTAD solution was spin-coated on ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 On the substrate;
spin-coating ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 Placing the substrate under room temperature to form a Spiro hole transport layer to obtain ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 A Spiro-OMeTAD substrate.
Specifically, ITO/SnO obtained in step S3 is obtained 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 The substrate is placed in a glove box N 2 In the environment, spin-coating the Spiro-OMeTAD solution on ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 On the substrate, spin-coating ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 Placing the substrate at room temperature to form a Spiro-OMeTAD hole transport layer to obtain ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 A Spiro-OMeTAD substrate.
In this embodiment, the thickness of the Spiro hole transport layer in the first direction is 10nm to 100nm.
Further, referring to fig. 7, in step S5, moO is prepared on the side of the Spiro hole transport layer away from the ITO substrate x A step of transmitting a buffer layer, comprising:
in ITO/SnO by vapor deposition process 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 Deposition on a Spiro-OMeTAD substrate to form MoO having a thickness of 10nm to 80nm x Transmitting the buffer layer to obtain ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 /Spiro-OMeTAD/MoO x A substrate.
As shown in fig. 8, in the above step S6, in MoO x A step of preparing an IZO conductive layer on a side of the transmission buffer layer away from the ITO substrate, comprising:
the magnetron sputtering technology is adopted in ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 /Spiro-OMeTAD/MoO x Depositing IZO on the substrate to form IZO conductive layer with thickness of 50-200nm to obtain ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 /Spiro-OMeTAD/MoO x IZO substrate.
Of course, in some other embodiments of the present application, other conductive materials may be used to form the conductive layer, which is not limited in this regard.
As shown in fig. 9, in the step S7, a vapor deposition process is used to deposit ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 /Spiro-OMeTAD/MoO x Depositing and forming an Ag electrode and a cathode positioned on the first surface of the ITO substrate on the IZO substrate to obtain a perovskite solar cell; that is, the Ag electrode and the cathode can be prepared in the same process, and the thickness of the Ag electrode and the cathode is 30nm-150nm.
Optionally, in step S8, the step of preparing the MXene interconnection layer on the side of the Ag electrode away from the ITO substrate includes:
using screen printerDepositing Nb on the side of the Ag electrode far from the ITO substrate 2 CT x And (3) placing the Mxene conductive paste on a hot stage for annealing treatment to form the MXene interconnection layer.
Specifically, as shown in FIG. 10, the screen printing process can be adopted in the step of ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 /Spiro-OMeTAD/MoO x Deposition of Nb on IZO/Ag substrates 2 CT x The Mxene conductive paste was then annealed on a hot bench for 15 minutes to form an MXene interconnect layer having a thickness of 50nm-200 nm.
It should be appreciated that the materials used to prepare the MXene interconnect layer in this embodiment include, but are not limited to, nb 2 CT x 。
Optionally, in the step S9, a GaAs solar cell is provided, and bonding between the GaAs solar cell and the perovskite solar cell is performed to obtain a mechanically laminated perovskite/GaAs two-end solar cell with an MXene interconnection layer, which includes:
providing a GaAS solar cell, wherein the GaAS solar cell comprises an anode;
and placing the anode of the GaAs solar cell on the surface of one side of the MXene interconnection layer far away from the ITO substrate, and curing by using ultraviolet curing glue to realize the bonding of the GaAs solar cell and the perovskite solar cell, so as to obtain the perovskite/GaAs two-end mechanical laminated solar cell of the MXene interconnection layer.
Specifically, in step S9, the anode of the GaAs solar cell is placed on the upper surface of the MXene interconnection layer, ultraviolet curing glue is applied around the GaAs solar cell, and then ultraviolet light is irradiated for 1-10min to complete curing, so that the MXene interconnection layer is stably connected with the anode of the GaAs cell, and thus, the electrical interconnection and optical coupling of the perovskite cell and the GaAs solar cell can be realized by adopting a mechanical stacking manner, and the perovskite/GaAs two-end mechanical stacked solar cell of the MXene interconnection layer shown in fig. 1 is obtained.
According to the above embodiments, the beneficial effects of the application are as follows:
the application provides a perovskite/GaAs two-end mechanical laminated solar cell with an interconnection layer and a preparation method thereof, and because the interconnection layer is directly prepared on the perovskite solar cell and the GaAs solar cell adopt a mechanical stacking bonding mode, compared with the existing two-end laminated solar cell process, the perovskite/GaAs two-end mechanical laminated solar cell has the advantages that no extra process is needed on the GaAs solar cell, the efficiency damage of the GaAs solar cell is greatly reduced, and the efficiency of the laminated solar cell is improved. In addition, the MXene material is adopted as the interconnection layer, so that the GaAs solar cell and the perovskite solar cell are bonded more tightly, and the optical and electrical parasitic losses of the laminated cell are reduced.
In addition, the perovskite/GaAs two-end mechanical laminated solar cell with the interconnection layer and the preparation method thereof have the advantages of low cost, easiness in implementation and easiness in repetition, balance between the preparation process and the cost is considered, and the perovskite/GaAs two-end mechanical laminated solar cell with the interconnection layer has strong application potential.
In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present application, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
In the present application, unless expressly stated or limited otherwise, a first feature "above" or "below" a second feature may include both the first and second features being in direct contact, as well as the first and second features not being in direct contact but being in contact with each other through additional features therebetween. Moreover, a first feature being "above," "over" and "on" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature includes the first feature being directly under and obliquely below the second feature, or simply means that the first feature is less level than the second feature.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present application. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Further, one skilled in the art can engage and combine the different embodiments or examples described in this specification.
Although the application is described herein in connection with various embodiments, other variations to the disclosed embodiments can be understood and effected by those skilled in the art in practicing the claimed application, from a study of the drawings, the disclosure, and the appended claims. In the claims, the word "comprising" does not exclude other elements or steps, and the "a" or "an" does not exclude a plurality. A single processor or other unit may fulfill the functions of several items recited in the claims. The mere fact that certain measures are recited in mutually different dependent claims does not indicate that a combination of these measures cannot be used to advantage.
The foregoing is a further detailed description of the application in connection with the preferred embodiments, and it is not intended that the application be limited to the specific embodiments described. It will be apparent to those skilled in the art that several simple deductions or substitutions may be made without departing from the spirit of the application, and these should be considered to be within the scope of the application.

Claims (7)

1. The preparation method of the perovskite/GaAs two-end mechanical laminated solar cell of the MXene interconnection layer is characterized by comprising the following steps of:
providing an ITO substrate, wherein the ITO substrate comprises a first surface;
preparing SnO on the first surface 2 An electron transport layer;
at the SnO 2 Preparing a perovskite photoactive layer on one side of the electron transport layer far away from the ITO substrate;
preparing a Spiro hole transport layer on one side of the perovskite photoactive layer away from the ITO substrate;
preparing MoO on one side of the Spiro hole transport layer far away from the ITO substrate x A transmission buffer layer;
at the MoO x Preparing an IZO conductive layer on one side of the transmission buffer layer far away from the ITO substrate;
preparing an Ag electrode on one side of the IZO conducting layer far away from the ITO substrate, and preparing a cathode on the first surface to obtain a perovskite solar cell;
adopting a screen printing process to deposit Nb on one side of the Ag electrode far away from the ITO substrate 2 CT x The Mxene conductive paste is placed on a hot table for annealing treatment to form an MXene interconnection layer;
providing a GaAs solar cell, wherein the GaAs solar cell comprises an anode;
and placing an anode of the GaAs solar cell on the surface of one side, far away from the ITO substrate, of the MXene interconnection layer, coating ultraviolet curing glue on the periphery of the GaAs solar cell, and then using ultraviolet irradiation to complete curing so as to realize bonding of the GaAs solar cell and the perovskite solar cell, thus obtaining the perovskite/GaAs two-end mechanical laminated solar cell of the MXene interconnection layer.
2. The perovskite of an MXene interconnect layer according to claim 1The preparation method of the GaAs two-end mechanical laminated solar cell is characterized in that SnO is prepared on the first surface 2 An electron transport layer comprising:
80 mu L of SnO 2 Spin-coating the sol on the first surface of the ITO substrate in an air environment at a rotating speed of 3000rpm, and forming SnO after annealing treatment 2 An electron transport layer to obtain ITO/SnO 2 A substrate.
3. The method for preparing a mechanically laminated perovskite/GaAs two-terminal solar cell with an interconnect layer of MXene according to claim 2, characterized in that the step of forming a layer of a perovskite/GaAs two-terminal mechanically laminated solar cell with an interconnect layer of MXene is performed by 2 A step of preparing a perovskite photoactive layer on a side of the electron transport layer remote from the ITO substrate, comprising:
the ITO/SnO 2 The substrate is placed in N 2 In the environment, and PbI 2 /PbCl 2 The mixed solution and the MAI/FAI mixed solution are sequentially spin-coated on the ITO/SnO 2 On the substrate;
spin-coating ITO/SnO 2 Placing the substrate on a heat table, annealing to form a perovskite photoactive layer to obtain ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 A substrate.
4. The method of fabricating a two-terminal mechanical stacked perovskite/GaAs solar cell for an MXene interconnect layer according to claim 3, wherein the step of fabricating a spira hole transport layer on a side of the perovskite photoactive layer away from the ITO substrate comprises:
the ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 The substrate is placed in N 2 After the environment, spin-coating the Spiro-OMeTAD solution on the ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 On the substrate;
spin-coating ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 The substrate is placed under room temperature condition and shapedForming a Spiro hole transport layer to obtain ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 A Spiro-OMeTAD substrate.
5. The method for manufacturing a mechanically laminated perovskite/GaAs two-terminal solar cell with an MXene interconnect layer according to claim 4, wherein MoO is manufactured on a side of the Spiro hole transport layer away from the ITO substrate x A step of transmitting a buffer layer, comprising:
the ITO/SnO is formed by an evaporation process 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 Deposition on a Spiro-OMeTAD substrate
Formation of MoO x Transmitting the buffer layer to obtain ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 /Spiro-OMeTAD/MoO x A substrate.
6. The method for manufacturing a mechanically laminated perovskite/GaAs two-terminal solar cell having an MXene interconnect layer according to claim 5, wherein said step of forming a thin film on said MoO x A step of preparing an IZO conductive layer on a side of the transmission buffer layer away from the ITO substrate, comprising:
the magnetron sputtering technology is adopted to produce the ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 /Spiro-OMeTAD/MoO x Depositing IZO on the substrate to form an IZO conductive layer to obtain ITO/SnO 2 /MA 0.72 FA 0.28 Pb(I 0.85 Cl 0.15 ) 3 /Spiro-OMeTAD/MoO x IZO substrate.
7. The perovskite/GaAs two-end mechanical stacked solar cell of an MXene interconnect layer, wherein the perovskite/GaAs two-end mechanical stacked solar cell of an MXene interconnect layer is prepared by the method of any one of claims 1 to 6, and the perovskite/GaAs two-end mechanical stacked solar cell of an MXene interconnect layer comprises: perovskite solar cells, gaAs solar cells, and MXene interconnect layers; wherein the perovskite solar cell comprises:
an ITO substrate comprising a first surface;
SnO at said first surface 2 An electron transport layer;
located at the SnO 2 A perovskite photoactive layer on one side of the electron transport layer away from the ITO substrate;
the Spiro hole transport layer is positioned on one side of the perovskite photoactive layer, which is far away from the ITO substrate;
MoO on one side of the Spiro hole transport layer away from the ITO substrate x A transmission buffer layer;
is positioned at the MoO x An IZO conductive layer on one side of the transmission buffer layer far away from the ITO substrate;
an Ag electrode positioned on one side of the IZO conducting layer far away from the ITO substrate;
a cathode located on the first surface;
the interconnection layer is located on one side of the Ag electrode far away from the ITO substrate, the GaAs solar cell is located on one side of the interconnection layer far away from the ITO substrate, and the GaAs solar cell comprises an anode.
CN202210623194.5A 2022-06-02 2022-06-02 perovskite/GaAs two-end mechanical laminated solar cell with MXene interconnection layer and preparation method thereof Active CN115101614B (en)

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