CN115084395B - Perovskite absorption layer/hole transport layer interface processing method and perovskite solar cell - Google Patents
Perovskite absorption layer/hole transport layer interface processing method and perovskite solar cell Download PDFInfo
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Abstract
The invention provides a perovskite absorption layer/hole transport layer interface processing method and a perovskite solar cell, wherein the method comprises the following steps: preparing a vanadium-containing nano film on the hole transport layer, and annealing at 450-550 ℃; or annealing the vanadium-containing nano powder on the hole transport layer at 250 to 350 ℃ to form a dispersion liquid, and drying to obtain a passivation layer; preparing a perovskite absorption layer on the passivation layer; the composition of the passivation layer is V 1‑x1 M x1 O y ；0≤x1≤1；2<y<2.5 the M is selected from one or more of Mg, cu, cr, W, nb, mo, B, H, zr, sn, la and Ti. According to the processing method, a passivation layer is formed on the interface of the perovskite absorption layer and the hole transport layer and serves as an interface buffer layer, so that the interface stability of the material can be effectively improved, and the stability of the solar cell is further improved.
Description
Technical Field
The invention belongs to the technical field of solar cells, and particularly relates to a perovskite absorption layer/hole transport layer interface processing method and a perovskite solar cell.
Background
The perovskite solar cell mainly comprises a transparent conductive substrate, an electron transport layer, a perovskite layer, a hole transport layer and a back electrode. The solar cell is a semiconductor photoelectric device for converting light energy into electric energy, and has important research value in the field of energy conversion.
The perovskite solar cell is of a multilayer film stacking structure, and due to the poor stability and valence of perovskite materials, obvious ion migration exists in the using process, so that instability at the interface of a device or explanation of charge transport layer materials and the like are caused. In addition, under the thermal cycling service condition of the solar cell, a larger shear stress is easily generated due to the mismatch of the thermal expansion coefficients between the perovskite light absorption layer and the charge transmission, so that the device is delaminated at the interface to cause the failure of the device.
Disclosure of Invention
In view of the above, the present invention provides a method for processing a perovskite absorption layer/hole transport layer interface and a perovskite solar cell, in which a passivation layer is formed at the interface between the perovskite absorption layer and the hole transport layer to serve as an interface buffer layer, so that the interface stability of the material can be effectively improved, and the stability of the solar cell can be further improved.
The invention provides a perovskite absorption layer/hole transport layer interface processing method, which comprises the following steps:
preparing a vanadium-containing nano film on the hole transport layer, and annealing at 450-550 ℃;
or annealing the vanadium-containing nano powder on the hole transport layer at 250 to 350 ℃, dispersing to form dispersion liquid, and drying to obtain a passivation layer;
preparing a perovskite absorption layer on the passivation layer;
the composition of the passivation layer is V 1-x1 M x1 O y ；0≤x1≤1；2<y<2.5；
The M is selected from one or more of Mg, cu, cr, W, nb, mo, B, H, zr, sn, la and Ti.
FIG. 1 is a schematic view of an annealing or baking process for the perovskite absorber/hole transport layer interface; wherein, the low temperature state is a schematic diagram of a passivation layer formed by drying the powder dispersion liquid, and the high temperature state is a schematic diagram of a passivation layer formed by annealing the film.
The vanadium-containing nano film is preferably prepared by magnetron sputtering.
In the invention, the vanadium-containing nano film is VO 2 A film; the vanadium-containing nano powder is selected from V 0.99 W 0.01 O 2 Nanopowder, or VO 2 Nanopowder, or V 0.95 Al 0.05 O 2 Nano powder; after annealing or drying, the formed passivation layer has the composition V 1-x1 M x1 O y ；0≤x1≤1；2<y<2.5; in a specific embodiment, the passivation layer is a P-type doped VO 2 Nano-powder layer, W-doped VO 2 Nano powder layer, al doped VO 2 Nano powder layer, or P-type doped VO 2 A thin film layer.
In the invention, the air for annealing at 450 to 550 ℃ has the partial pressure of 1000 to 10000Pa and the time of more than 6 min; in one embodiment, the conditions of the high temperature treatment include a temperature of 540 ℃, a time of 1000s, and an air partial pressure of 5000Pa.
The air partial pressure for annealing at 250 to 350 ℃ is 1 × 10 3 Pa~1×10 5 Pa, time is more than 50 s. In the specific embodiment, the conditions of the low-temperature treatment comprise that the temperature is 250 ℃, the time is 3000s, and the air partial pressure is 10000Pa; or comprises the temperature of 300 ℃, the time of 3000s and the air partial pressure of 13000Pa; or comprises 250 deg.C, 3000s time, and 10000Pa air partial pressure.
The solvent used for the dispersion is preferably an alcohol solvent, and more preferably ethanol. In the invention, the drying temperature is preferably 100 to 150 ℃; the drying time is preferably such that the solvent in the dispersion is substantially evaporated.
In the present invention, the perovskite absorption layer is prepared according to the following method:
preparing a mixed solution of lead iodide and cesium iodide to obtain PbI 2 Precursor solution;
mixing formamidine hydroiodide and methylamine chloride to obtain an organic salt solution;
coating PbI on the passivation layer 2 And coating the precursor solution with an organic salt solution, and annealing to form the perovskite absorption layer.
The invention provides a perovskite solar cell which comprises a substrate, a hole transport layer, a passivation layer and a perovskite absorption layer which are sequentially arranged;
the passivation layer is formed by the processing method in the technical scheme.
In the invention, the thickness of the passivation layer is less than or equal to 30 microns.
In the invention, the hole transport layer is NiO x2 Film (x 2 is less than or equal to 1).
The invention provides a processing method of a perovskite absorption layer/hole transport layer interface, which comprises the following steps: preparing a vanadium-containing nano film on the hole transport layer, and annealing at 450-550 ℃; or annealing the vanadium-containing nano powder on the hole transport layer at 250 to 350 ℃ to form a dispersion liquid, and drying to obtain a passivation layer; preparing a perovskite absorption layer on the passivation layer; the composition of the passivation layer is V 1-x1 M x1 O y ；0≤x1≤1；2<y<2.5; the M is selected from one or more of Mg, cu, cr, W, nb, mo, B, H, zr, sn, la and Ti. The treatment method forms a passivation layer on the interface of the perovskite absorption layer and the hole transport layer, and the passivation layer is used as an interface buffer layer, so that the interface stability of the material can be effectively improved, and further the stability of the solar cell is improved.
Drawings
FIG. 1 is a schematic illustration of a process for treating the perovskite absorption layer/hole transport layer interface at low and high temperatures;
FIG. 2 shows P-type doped VO in example 1 of the present invention 2 XPS diagram of nano powder;
FIG. 3 is a voltage-current density curve of a battery prepared with the interface treatment and the interface non-treatment in example 1 of the present invention;
fig. 4 is a stability test of batteries prepared with interface treatment and interface non-treatment in example 1 of the present invention;
FIG. 5 is a voltage-current density curve of a cell prepared with the interface treatment and the interface non-treatment in example 2 of the present invention;
FIG. 6 is a voltage-current density curve for a cell prepared with interface treatment and interface no treatment in accordance with the present invention;
fig. 7 is a stability test of batteries prepared with interface treatment and interface no treatment according to the present invention;
fig. 8 is a voltage-current density curve of a battery prepared with the interface treatment and the interface non-treatment in the present invention.
Detailed Description
In order to further illustrate the present invention, the following will describe in detail a perovskite absorption layer/hole transport layer interface processing method and a perovskite solar cell provided by the present invention with reference to examples, but they should not be construed as limiting the scope of the present invention.
The current density-voltage (JV) curves of the batteries prepared by the PCE test examples and the comparative examples are tested and finished in a kethley 2400 system; and (3) testing conditions are as follows: the simulated light intensity is 100mW cm -2 (AM 1.5G) Scan Rate of 0.1V s -1 (step size is 0.02V, time delay is 200 ms), scanning interval is 1.2V to-0.2V, and power output of xenon lamp is calibrated by KG5 standard Si battery of NERL (National Renewable Energy Laboratory) standard.
Stability test the perovskite cell was subjected to a cell thermal stability test in a nitrogen glove box at 85 ℃.
Example 1
Weighing 1.16g of VOSO 4 The powder was dispersed in 20mL deionized water and stirred continuously for 10min to obtain a blue, clear solution. Placing the mixture in a water bath heating environment at 70 ℃ and continuously stirring, and then dissolving 0.3mL of hydrazine hydrate (N) 2 H 4 ·H 2 O,80 wt%) was slowly added dropwise to the above solution, gradually turning into a light blue suspension. Stirring is continued for 15miAnd n, adding a proper amount of 1mol/LNaOH aqueous solution after the suspension is stable, and finally washing the precipitate by deionized water, absolute ethyl alcohol and acetone in sequence to finally obtain the precursor. And dispersing the precursor into 30mL of deionized water, and transferring the precursor into a high-pressure hydrothermal kettle with the volume of 50mL after uniform dispersion. Heating the high-pressure hydrothermal kettle to 260 ℃, keeping the temperature constant at 24 h, and naturally cooling to room temperature after the reaction is finished. Washing the primary product with deionized water for 3 times, and drying in vacuum drying oven at 60 deg.C for 6h to obtain VO 2 And (3) nano powder. Taking a proper amount of powder, transferring the powder to a vacuum rapid thermal treatment furnace, annealing for 3000s at 250 ℃ and under the air partial pressure of 10000Pa to obtain p-type doped VO 2 And (3) nano powder. 5mg of annealed VO 2 Dispersing the nano powder into 1mL of absolute ethyl alcohol, and performing ultrasonic dispersion for 12h to obtain a high-dispersion solution A.
1X 1cmFTO film (glass thickness 2mm, FTO film thickness 100 nm) glass through ethanol, isopropanol (IPA) and acetone respectively cleaning for 30 minutes, using nitrogen gun to blow dry. Sputtering a layer of compact NiO on the surface layer of the FTO film glass by adopting a magnetron sputtering method x2 The film (thickness is 20nm, x2 is less than or equal to 1) and the sputtering power is 80W and 30min. And (3) treating the sputtered film for 10min by using oxygen plasma with the power of 2kW.
50 mu.L of the solution A is uniformly paved on the NiO x2 The parameters of a glue machine on the surface of the film are set to be 2500rpm for 30s; then, the mixture is placed on a heating table at 120 ℃ and dried for 5min.
600mg of lead iodide (PbI) were weighed 2 ) And 6mg of cesium iodide (CsI) were dissolved in 900. Mu.L of a solution of N, N-Dimethylformamide (DMF) and 100. Mu.L of dimethyl sulfoxide (DMSO), and the solution was heated and stirred at 70 ℃ to dissolve them sufficiently to obtain PbI 2 And D, precursor solution B. 80mg of formamidine hydroiodide (FAI) and 8mg of methylamine chloride (MACl) were dissolved in 1mL of IPA solution, and the mixture was sufficiently dissolved by stirring to obtain an organic salt solution C.
Uniformly spreading 40 mu L of the solution B on the surface of the annealed film, and setting the parameters of a spin coater to be 2000rpm for 30s; then, the plate was placed on a 75 ℃ hot stand for 1min to form a coating. Uniformly spreading 70 mu L of the solution C on the surface of a coating formed after the solution B is coated, and setting the parameters of a spin coater to be 3000rpm for 30s; the devices were then transferred to a 130 ℃ hot stage anneal for 15min. Samples which were also not subjected to spin coating of the A layer were used as comparative examples to obtain perovskite thin films (400 nm), respectively.
And (3) evaporating a C60 electron transport layer (40 nm) on the surface of the prepared perovskite thin film to obtain the battery.
Transferring the electron transport layer into a thermal evaporation device to reach a vacuum degree of 1 × 10 -5 Starting to evaporate an electrode (Au) under the condition of Pa, wherein the thickness of the Au is 100nm; and (4) obtaining the battery.
Table 1 photovoltaic test results for cells prepared in example 1
Example 2
Weighing 1.16g of VOSO 4 The powder and 0.013g ammonium tungstate were dispersed in 20mL deionized water and stirred continuously at 70 ℃ for 10min to obtain a blue transparent solution. Placing the mixture in a water bath heating environment at 70 ℃ and continuously stirring, and then dissolving 0.3mL of hydrazine hydrate (N) 2 H 4 ·H 2 O,80 wt%) was slowly added dropwise to the above solution, gradually turning into a light blue suspension. And continuously stirring for 15min, adding a proper amount of 1mol/L NaOH aqueous solution after the suspension is stable, and finally washing the precipitate by deionized water, absolute ethyl alcohol and acetone in sequence to finally obtain the precursor. And dispersing the precursor into 30mL of deionized water, and transferring the precursor into a high-pressure hydrothermal kettle with the volume of 50mL after uniform dispersion. Heating the high-pressure hydrothermal kettle to 260 ℃, keeping the temperature constant at 24 h, and naturally cooling to room temperature after the reaction is finished. Washing the primary product with deionized water for 3 times, placing the product in a vacuum drying oven for drying at 60 ℃ for 6h to obtain W-doped VO 2 And (3) nano powder. Transferring a proper amount of powder to a vacuum rapid thermal treatment furnace, annealing for 3000s at 300 ℃ under the air partial pressure of 13000Pa to obtain nano powder V 0.99 W 0.01 O 2 。
5mg of annealed W was doped with VO 2 Dispersing the nano powder into 1mL of absolute ethyl alcohol, and performing ultrasonic dispersion for 12 hours to obtain a high dispersion solution A.
1X 1cmFTO film (glass)2mm in thickness and 100nm in thickness of the FTO film layer) are respectively washed by ethanol, isopropanol (IPA) and acetone for 30 minutes and then dried by a nitrogen gun. Sputtering a layer of compact NiO on the surface layer of the FTO film glass by adopting a magnetron sputtering method x2 The film (thickness is 20nm, x2 is less than or equal to 1) and the sputtering power is 80W and 30min. And (3) treating the sputtered film for 10min by using oxygen plasma with the power of 2kW.
50 mu L of the solution A is evenly paved on the NiO x2 The parameters of a glue machine on the surface of the film are set to be 2500rpm for 30s; then placing on a heating table at 120 ℃ and drying for 5min.
600mg of lead iodide (PbI) are weighed 2 ) And 6mg of cesium iodide (CsI) were dissolved in 900. Mu.L of a solution of N, N-Dimethylformamide (DMF) and 100. Mu.L of dimethyl sulfoxide (DMSO), and the solution was heated and stirred at 70 ℃ to dissolve them sufficiently to obtain PbI 2 And D, precursor solution B. 80mg of formamidine hydroiodide (FAI) and 8mg of methylamine chloride (MACl) were dissolved in 1mL of IPA, and the resulting solution was stirred to dissolve completely to obtain an organic salt solution C.
Uniformly spreading 40 mu L of the solution B on the surface of the annealed film, and setting the parameters of a spin coater to be 2000rpm for 30s; then, the plate was placed on a 75 ℃ hot stand for 1min to form a coating. And (3) uniformly spreading 70 mu L of the solution C on the surface of a coating formed after the solution B is coated, wherein the parameters of a spin coater are as follows: speed 3000rpm, time 30s; the device was then transferred to a 130 ℃ hot stage anneal for 15min. Samples which were also not subjected to spin coating of the A layer were used as comparative examples to obtain perovskite thin films (400 nm), respectively.
And (3) evaporating a C60 electron transport layer (40 nm) on the surface of the prepared perovskite thin film to obtain the battery.
Transferring the electron transport layer into a thermal evaporation device to reach a vacuum degree of 1 × 10 -5 Starting to evaporate an electrode (Au) under the condition of Pa, wherein the thickness of the Au is 100nm; and obtaining the battery.
Table 2 photovoltaic parameters of cells prepared in example 2
Example 3 (Al doping)
Weighing 1.16g of VOSO 4 The powder and 0.053g of aluminum nitrate were dispersed in 20mL of deionized water and stirred continuously for 10min to obtain a blue transparent solution. Placing the mixture in a water bath heating environment at 70 ℃ and continuously stirring, and then dissolving 0.3mL of hydrazine hydrate (N) 2 H 4 ·H 2 O,80 wt%) was added slowly dropwise to the above solution, gradually turning into a light blue suspension. And continuously stirring for 15min, adding a proper amount of 1mol/L NaOH aqueous solution after the suspension is stable, and finally washing the precipitate by deionized water, absolute ethyl alcohol and acetone in sequence to obtain a precursor. And dispersing the precursor into 30mL of deionized water, and transferring the precursor into a high-pressure hydrothermal kettle with the volume of 50mL after uniform dispersion. Heating the high-pressure hydrothermal kettle to 260 ℃, keeping the temperature constant at 24 h, and naturally cooling to room temperature after the reaction is finished. Washing the primary product with deionized water for 3 times, and drying in a vacuum drying oven at 60 deg.C for 6h to obtain V 0.95 Al 0.05 O 2 And (3) nano powder. And (3) transferring a proper amount of powder to a vacuum rapid thermal treatment furnace, annealing for 3000s at 250 ℃ and under the air partial pressure of 10000Pa to obtain the nano powder.
Annealing 5mg of Al doped VO 2 Dispersing the nano powder into 1mL of absolute ethyl alcohol, and performing ultrasonic dispersion for 12h to obtain a high-dispersion solution A.
1X 1cmFTO film (glass thickness 2mm, FTO film thickness 100 nm) glass through ethanol, isopropanol (IPA) and acetone respectively cleaning for 30 minutes, using nitrogen gun to blow dry. Sputtering a layer of compact NiO on the surface layer of the FTO film glass by adopting a magnetron sputtering method x2 The film (thickness is 20nm, x2 is less than or equal to 1) and the sputtering power is 80W and 30min. And (3) treating the sputtered film for 10min by using oxygen plasma with the power of 2kW.
50 mu.L of the solution A is uniformly paved on the NiO x2 The parameters of a glue machine on the surface of the film are set to be 2500rpm and 30s; then, the mixture is placed on a heating table at 120 ℃ and dried for 5min.
600mg of lead iodide (PbI) were weighed 2 ) And 6mg of cesium iodide (CsI) were dissolved in 900. Mu.L of a solution of N, N-Dimethylformamide (DMF) and 100. Mu.L of dimethyl sulfoxide (DMSO), and the solution was heated and stirred at 70 ℃ to dissolve them sufficiently to obtain PbI 2 And (4) precursor solution B. 80mg of the above-mentioned powderFormamidine hydroiodide (FAI) and 8mg of methylamine chloride (MACl) were dissolved in 1mL of IPA, and the solution was stirred to dissolve it sufficiently to obtain an organic salt solution C.
Uniformly spreading 40 mu L of the solution B on the surface of the annealed film, and setting the parameters of a spin coater to be 2000rpm for 30s; then, the plate was placed on a 75 ℃ hot stand for 1min to form a coating. And (3) uniformly spreading 70 mu L of the solution C on the surface of a coating formed after the solution B is coated, wherein the parameters of a spin coater are as follows: speed 3000rpm, time 30s; the device was then transferred to a 130 ℃ hot stage anneal for 15min. Samples which were also not subjected to spin coating of the A layer were used as comparative examples to obtain perovskite thin films (400 nm), respectively.
And (3) evaporating a C60 electron transport layer (40 nm) on the surface of the prepared perovskite thin film to obtain the battery.
Transferring the electron transport layer into a thermal evaporation device to reach a vacuum degree of 1 × 10 -5 The deposition of electrode (Au) was started under Pa to a thickness of 100nm, thereby obtaining a battery.
Table 3 photovoltaic parameters of cells prepared in example 3
Example 4
1X 1cmFTO film (glass thickness 2mm, FTO film thickness 100 nm) glass through ethanol, isopropanol (IPA) and acetone respectively cleaning for 30 minutes, using nitrogen gun to blow dry. Sputtering a layer of compact NiO on the surface layer of the FTO film glass by adopting a magnetron sputtering method x2 The film (thickness is 20nm, x2 is less than or equal to 1) has the sputtering power of 80W and 30min. And (3) treating the sputtered film for 10min by using oxygen plasma with the power of 2kW.
1*1cmFTO/NiO x2 Sequentially placing a substrate (the thickness of glass is 2mm, and the thickness of an FTO film layer is 100 nm) into acetone, absolute ethyl alcohol and deionized water, respectively ultrasonically cleaning for ten minutes, and blowing the surface with nitrogen gas for drying after cleaning; and fixing the cleaned substrate on a magnetron sputtering sample table, and placing the substrate into magnetron sputtering equipment. The magnetron sputtering chamber is vacuumized to 1 × 10 -4 Pa, sample stage liftThe temperature is raised to 400 ℃, then the pumping force of a molecular pump is adjusted, and argon (the purity is 99.9993%) is introduced until the pressure in the chamber is stabilized to 1Pa; o in sputtering process 2 The total flow of the gas and the Ar gas is 50 sccm, the oxygen-argon ratio is 1 49, the sputtering time is 3 min, the direct current (vanadium target) power is fixed to be 80W, a sample is taken out and is moved to a vacuum rapid thermal treatment furnace, the temperature is 540 ℃, the air partial pressure is 5000Pa, and annealing is carried out for 1000s, so that the VO with the P-type doping is obtained 2 A substrate with a modified layer (thickness 15 nm).
600mg of lead iodide (PbI) are weighed 2 ) And 6mg of cesium iodide (CsI) were dissolved in 900. Mu.L of a solution of N, N-Dimethylformamide (DMF) and 100. Mu.L of dimethyl sulfoxide (DMSO), and the solution was heated and stirred at 70 ℃ to dissolve them sufficiently to obtain PbI 2 And (4) precursor solution A. 80mg of formamidine hydroiodide (FAI) and 8mg of methylamine chloride (MACl) were dissolved in 1mL of IPA, and the resulting solution was stirred to dissolve them sufficiently to obtain an organic salt solution B.
Uniformly spreading 40 mu L of solution A on the surface of the annealed film, and setting the parameters of a spin coater to be 2000rpm for 30s; then, the plate was placed on a 75 ℃ hot stand for 1min to form a coating. Uniformly spreading 70 mu L of the solution B on the surface of a coating formed after the solution A is coated, wherein the parameters of a spin coater are set to 3000rpm and 30s; the device was then transferred to a 130 ℃ hot stage anneal for 15min. Samples which were also not subjected to spin coating of the A layer were used as comparative examples to obtain perovskite thin films (400 nm), respectively.
And (3) evaporating a C60 electron transport layer (40 nm) on the surface of the prepared perovskite thin film to obtain the battery.
Transferring the electron transport layer into a thermal evaporation device to reach a vacuum degree of 1 × 10 -5 Starting to evaporate an electrode (Au) under the condition of Pa, wherein the thickness is 100nm; and obtaining the battery.
Table 4 photovoltaic parameters of cells prepared in example 4
As can be seen from the above examples, the present invention provides a method for treating a perovskite absorption layer/hole transport layer interface, comprisingThe following steps: preparing a vanadium-containing nano film on the hole transport layer, and annealing at 450-550 ℃; or annealing the vanadium-containing nano powder on the hole transport layer at 250 to 350 ℃ to form a dispersion liquid, and drying to obtain a passivation layer; preparing a perovskite absorption layer on the passivation layer; the composition of the passivation layer is V 1-x1 M x1 O y ；0≤x1≤1；2<y<2.5; the M is selected from one or more of Mg, cu, cr, W, nb, mo, B, H, zr, sn, la and Ti. According to the processing method, a passivation layer is formed on the interface of the perovskite absorption layer and the hole transport layer and serves as an interface buffer layer, so that the interface stability of the material can be effectively improved, and the stability of the solar cell is further improved. The perovskite solar cell also has higher photoelectric conversion efficiency.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (6)
1. A method of treating a perovskite absorber/hole transport layer interface comprising the steps of:
preparing a vanadium-containing nano film on the hole transport layer, and annealing at 450-550 ℃; the air partial pressure for annealing at the temperature of 450 to 550 ℃ is 1000 to 10000Pa, and the time is more than 6 min;
or annealing the vanadium-containing nano powder on the hole transport layer at 250 to 350 ℃ to form a dispersion liquid, and drying to obtain a passivation layer; the air partial pressure for annealing at 250 to 350 ℃ is 1 × 10 3 Pa~1×10 5 Pa, time is more than 50 s;
preparing a perovskite absorption layer on the passivation layer;
the composition of the passivation layer is V 1-x1 M x1 O y ；0≤x1≤1；2<y<2.5；
The M is selected from one or more of Mg, cu, cr, W, nb, mo, B, H, zr, sn, la and Ti.
2. The method of claim 1The passivation layer is P-type doped VO 2 Nano powder layer or P-type doped VO 2 A thin film layer.
3. The process of claim 1, wherein the perovskite absorption layer is prepared according to the following method:
preparing a mixed solution of lead iodide and cesium iodide to obtain PbI 2 Precursor solution;
mixing formamidine hydroiodide and methylamine chloride to obtain an organic salt solution;
coating PbI on the passivation layer 2 And coating the precursor solution with an organic salt solution, and annealing to form the perovskite absorption layer.
4. The perovskite solar cell is characterized by comprising a substrate, a hole transport layer, a passivation layer and a perovskite absorption layer which are sequentially arranged;
the passivation layer is formed by the processing method of any one of claims 1~3.
5. The perovskite solar cell of claim 4, wherein the thickness of the passivation layer is 30 microns or less.
6. The perovskite solar cell of claim 4, wherein the hole transport layer is NiO x2 Film (x 2 is less than or equal to 1).
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| CN104823295A (en) * | 2012-09-05 | 2015-08-05 | 香港大学 | Solution-processed transition metal oxides |
| CN108232018A (en) * | 2018-01-05 | 2018-06-29 | 宁波工程学院 | A kind of preparation method and applications of vanadium pentoxide films |
| CN112614938A (en) * | 2020-12-15 | 2021-04-06 | 华能新能源股份有限公司 | All-inorganic composite hole transport layer with energy level gradient, battery and preparation method |
| CN114373871A (en) * | 2022-01-07 | 2022-04-19 | 南开大学 | Preparation method of high-open-voltage wide-band-gap perovskite top battery for laminated battery |
| CN114823346A (en) * | 2022-03-31 | 2022-07-29 | 浙江理工大学 | Preparation method and application of pentavalent metal element doped metal oxide film |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104823295A (en) * | 2012-09-05 | 2015-08-05 | 香港大学 | Solution-processed transition metal oxides |
| CN108232018A (en) * | 2018-01-05 | 2018-06-29 | 宁波工程学院 | A kind of preparation method and applications of vanadium pentoxide films |
| CN112614938A (en) * | 2020-12-15 | 2021-04-06 | 华能新能源股份有限公司 | All-inorganic composite hole transport layer with energy level gradient, battery and preparation method |
| CN114373871A (en) * | 2022-01-07 | 2022-04-19 | 南开大学 | Preparation method of high-open-voltage wide-band-gap perovskite top battery for laminated battery |
| CN114823346A (en) * | 2022-03-31 | 2022-07-29 | 浙江理工大学 | Preparation method and application of pentavalent metal element doped metal oxide film |
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