CN115084304A - Semiconductor structure and forming method thereof - Google Patents

Semiconductor structure and forming method thereof Download PDF

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Publication number
CN115084304A
CN115084304A CN202110260919.4A CN202110260919A CN115084304A CN 115084304 A CN115084304 A CN 115084304A CN 202110260919 A CN202110260919 A CN 202110260919A CN 115084304 A CN115084304 A CN 115084304A
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Prior art keywords
layer
forming
opening
substrate
ions
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Chinese (zh)
Inventor
冯霞
曾红林
陈晓军
吴家亨
殷霞革
张冬生
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Semiconductor Manufacturing International Shanghai Corp
Semiconductor Manufacturing International Beijing Corp
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Semiconductor Manufacturing International Shanghai Corp
Semiconductor Manufacturing International Beijing Corp
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Priority to CN202110260919.4A priority Critical patent/CN115084304A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

A semiconductor structure and a method of forming the same, wherein the semiconductor structure comprises: the device comprises a substrate, a first doping region and a second doping region are arranged in the substrate; an isolation structure located on the substrate; a first opening in the isolation structure and the substrate; the light absorption layer is positioned in the first opening, and the distance between the top side wall of the first opening and the top side wall of the light absorption layer is larger than zero; and the dielectric layer is positioned on the isolation structure and covers the light absorption layer. Through the first opening in the isolation structure and the substrate, and the distance between the top sidewall of the first opening and the top sidewall of the light absorption layer is greater than zero. So that the distance between the top sidewall of the light absorbing layer and the top sidewall of the first opening is increased. When a dielectric layer is formed subsequently, the dielectric layer can be well filled between the light absorption layer and the isolation structure, the generation of gap problems is reduced, the reliability of the germanium photoelectric detector is effectively improved, and the performance of a finally formed semiconductor structure is improved.

Description

Semiconductor structure and forming method thereof
Technical Field
The present invention relates to the field of semiconductor manufacturing technologies, and in particular, to a semiconductor structure and a method for forming the same.
Background
In semiconductor photodetectors, the photodetector, when exposed to a light source, absorbs light energy through a detection material and converts it into an electrical signal to output a current, which can be used for optical communication and optical detection.
Through decades of development, silicon-based germanium photodetectors, which are one of the important representatives in the silicon-based photoelectric integration technology, are continuously optimized in structure and further improved in performance. Photodetectors can be classified into two types, normal incidence (free space) and edge incidence (waveguide integration), according to the incidence angle of their light. The waveguide integrated photoelectric detector has the advantages that the transmission and absorption of light are along the waveguide direction, and the carrier transport is along the direction perpendicular to the waveguide direction, so that the responsivity of the device can be improved by increasing the absorption length on the premise of keeping the thickness of the absorption region unchanged.
However, the reliability of the silicon-based germanium photodetector in the prior art is poor.
Disclosure of Invention
The invention provides a semiconductor structure and a forming method thereof, which can effectively improve the performance of the semiconductor structure.
To solve the above problems, the present invention provides a semiconductor structure, comprising: the ion source comprises a substrate, wherein the substrate is provided with a first doping area and a second doping area which are separated from each other, the first doping area is provided with first ions, the second doping area is provided with second ions, and the first ions and the second ions are different in electric type; an isolation structure on the substrate; a first opening in the isolation structure and the substrate, the first opening exposing a portion of the first doped region and a portion of the second doped region; the light absorption layer is positioned in the first opening, and the distance between the top side wall of the first opening and the top side wall of the light absorption layer is larger than zero; and the dielectric layer is positioned on the isolation structure and covers the light absorption layer.
Optionally, the material of the light absorption layer includes: and (3) germanium.
Optionally, the isolation structure includes a first isolation layer and a second isolation layer located on the first isolation layer.
Optionally, the density of the second isolation layer is less than the density of the first isolation layer.
Optionally, the first ions comprise N-type ions or P-type ions; the second ions include P-type ions or N-type ions.
Optionally, the method further includes: and the light inlet is positioned in the medium layer and positioned on the light absorption layer.
Correspondingly, the invention also provides a method for forming the semiconductor structure, which comprises the following steps: providing a substrate, wherein the substrate is provided with a first doping area and a second doping area which are separated from each other, the first doping area is provided with first ions, the second doping area is provided with second ions, and the first ions and the second ions are different in electric type; forming an isolation structure on the substrate; forming a first opening in the isolation structure and the substrate, wherein the first opening exposes a part of the first doped region and a part of the second doped region; forming a light absorption layer in the first opening, wherein the distance between the top side wall of the first opening and the top side wall of the light absorption layer is larger than zero; after the light absorption layer is formed, a dielectric layer is formed on the isolation structure and covers the light absorption layer.
Optionally, the material of the light absorption layer includes: and (3) germanium.
Optionally, the isolation structure includes a first isolation layer and a second isolation layer located on the first isolation layer.
Optionally, the method for forming the first opening includes: forming an initial first opening in the substrate, the first isolation layer and the second isolation layer; and etching the initial first opening in the second isolation layer to form the first opening.
Optionally, the density of the second isolation layer is less than the density of the first isolation layer.
Optionally, the process of performing etching treatment on the initial first opening located in the second isolation layer includes a wet etching process.
Optionally, the method for forming the light absorption layer in the first opening includes: and forming the light absorption layer in the first opening by adopting an epitaxial growth process.
Optionally, the forming process of the first isolation layer includes a chemical vapor deposition process.
Optionally, the forming process of the second isolation layer includes a high-temperature furnace tube process.
Optionally, the forming process of the dielectric layer includes a chemical vapor deposition process.
Optionally, the method for forming the substrate includes: providing an initial substrate; forming a first patterning layer on the initial substrate, wherein the first patterning layer exposes part of the top surface of the initial substrate, and performing implantation treatment of first ions on the initial substrate to form the first doping region; after the first doping region is formed, removing the first patterning layer, and forming a second patterning layer on the initial substrate, wherein the second patterning layer exposes a part of the top surface of the initial substrate; and carrying out second ion implantation treatment on the initial substrate to form the second doping area and the substrate.
Optionally, the first ions include N-type ions or P-type ions; the second ions include P-type ions or N-type ions.
Optionally, after the forming of the dielectric layer, the method further includes: and forming a light inlet in the dielectric layer, wherein the light inlet is positioned on the light absorption layer.
Compared with the prior art, the technical scheme of the invention has the following advantages:
in the structure of the technical scheme of the invention, the distance between the top side wall of the first opening and the top side wall of the light absorption layer is larger than zero through the first opening positioned in the isolation structure and the substrate. Such that a distance between a top sidewall of the light absorbing layer and a top sidewall of the first opening is increased. When the dielectric layer is formed subsequently, the dielectric layer can be well filled between the light absorption layer and the isolation structure, so that the gap problem is reduced, the reliability of the germanium photoelectric detector is effectively improved, and the performance of the finally formed semiconductor structure is improved.
In the forming method of the technical scheme of the invention, a first opening is formed in the isolation structure and the substrate, and the distance between the top side wall of the first opening and the top side wall of the light absorption layer is larger than zero. Such that a distance between a top sidewall of the light absorbing layer and a top sidewall of the first opening is increased. When the dielectric layer is formed subsequently, the dielectric layer can be well filled between the light absorption layer and the isolation structure, the generation of gap problems is reduced, the reliability of the germanium photoelectric detector is effectively improved, and the performance of the finally formed semiconductor structure is improved.
Further, the density of the second isolation layer is less than the density of the first isolation layer. By forming the second isolation layer with lower density, the second isolation layer can be removed easily in the process of forming the first opening, and meanwhile, the etching damage to the first isolation layer can also be reduced.
Drawings
FIGS. 1 and 2 are schematic diagrams of a semiconductor structure;
fig. 3 to 8 are schematic structural diagrams of steps of a semiconductor structure forming method according to an embodiment of the invention.
Detailed Description
As described in the background, prior art silicon-based germanium photodetectors have poor reliability. The following detailed description will be made in conjunction with the accompanying drawings.
Fig. 1 and 2 are schematic diagrams of a semiconductor structure.
Referring to fig. 1, a substrate 100 is provided, the substrate 100 has a first doped region 101 and a second doped region 102 separated from each other, the first doped region 101 has first ions therein, the second doped region 102 has second ions therein, and the first ions and the second ions have different electrical types; forming a first isolation layer 103 on the substrate 100; a light absorbing layer 104 is formed within the first isolation layer 103 and the substrate 100, and the light absorbing layer 104 is further located between the first doped region 101 and the second doped region 102.
Referring to fig. 2, after the light absorption layer 104 is formed, a dielectric layer 105 is formed on the first isolation layer 103, and the dielectric layer 105 covers the light absorption layer 104.
In this embodiment, the material germanium of the light absorption layer 104, and the light absorption layer 104 as an important component of a germanium photodetector, can generate a photoelectric effect in the presence of light, thereby separating free electrons. When a reverse voltage is applied to the first doped region 101 and the second doped region 102, a current generated by free electrons can be detected.
In the present embodiment, the method of forming the light absorbing layer 104 in the first isolation layer 103 and the substrate 100 includes: forming a first opening (not shown) in the first isolation layer 103 and the substrate 100; the light absorbing layer 104 is formed within the first opening using an epitaxial growth process.
Since the light absorbing layer 104 is formed by an epitaxial growth process, there is a problem of uneven growth distribution during the epitaxial growth process, so that the top of the light absorbing layer 104 is in an arc structure, and a small included angle (as shown in part a in fig. 1) exists between the top surface of the light absorbing layer 104 and the sidewall of the first isolation layer 103.
In the subsequent process of forming the dielectric layer 105, the light absorption layer 104 cannot withstand high temperature, so that the dielectric layer 105 cannot be formed by a high-temperature furnace process with better filling property. In addition, the dielectric layer 105 cannot be formed using a High Density Plasma (HDP) cvd process because the light absorbing layer 104 is also damaged by the High intensity Plasma.
Therefore, in the present embodiment, a common low temperature chemical vapor deposition process is selected to form the dielectric layer 105. However, the filling property of the low temperature chemical vapor deposition is weak, and therefore, the included angle between the top surface of the light absorption layer 105 and the sidewall of the first isolation layer 103 cannot be filled, and a gap (as shown in part B of fig. 2) is formed, which affects the reliability of the germanium photodetector, so that the performance of the finally formed semiconductor structure is reduced.
On the basis, the invention provides a semiconductor structure and a forming method thereof, wherein a first opening is formed in the isolation structure and the substrate, and the distance between the top side wall of the first opening and the top side wall of the light absorption layer is larger than zero. Such that a distance between a top sidewall of the light absorbing layer and a top sidewall of the first opening is increased. When the dielectric layer is formed subsequently, the dielectric layer can be well filled between the light absorption layer and the isolation structure, so that the gap problem is reduced, the reliability of the germanium photoelectric detector is effectively improved, and the performance of the finally formed semiconductor structure is improved.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
Fig. 3 to 8 are schematic structural diagrams illustrating a process of forming a semiconductor structure according to an embodiment of the present invention.
Referring to fig. 3, a substrate 200 is provided, the substrate 200 has a first doped region 201 and a second doped region 202 separated from each other, the first doped region 201 has first ions therein, the second doped region 202 has second ions therein, and the first ions and the second ions have different electrical types.
In this embodiment, the method for forming the substrate 200 includes: providing an initial substrate (not shown); forming a first patterning layer (not shown) on the initial substrate, wherein the first patterning layer exposes a part of the top surface of the initial substrate, and performing an implantation process of first ions on the initial substrate to form the first doping region 201; after forming the first doped region 201, removing the first patterned layer, a second patterned layer (not shown) on the initial substrate, the second patterned layer exposing a portion of the top surface of the initial substrate; and performing second ion implantation treatment on the initial substrate to form the second doped region 202 and the substrate 200.
In this embodiment, the substrate 200 is made of silicon; in other embodiments, the substrate may also be germanium, silicon carbide, gallium arsenide, or indium gallium.
In this embodiment, the first ions are N-type ions, and the second ions are P-type ions; in other embodiments, the first ions may also be P-type ions, and the second ions may be N-type ions.
In this embodiment, by forming the first doped region 201 and the second doped region 202, the first doped region 201 and the second doped region 202 form a PN junction, and then applying a reverse voltage to the PN junction, a current generated by free electrons separated from the light absorption layer can be detected.
Referring to fig. 4, an isolation structure is formed on the substrate 200.
In this embodiment, the isolation structure includes a first isolation layer 203 and a second isolation layer 204 on the first isolation layer 203.
In this embodiment, the density of the second isolation layer 204 is less than the density of the first isolation layer 203. By forming the second isolation layer 204 with a smaller density, the second isolation layer 204 can be removed more easily in the subsequent process of forming the first opening, and meanwhile, the etching damage to the first isolation layer 203 can also be reduced.
In this embodiment, the forming process of the first isolation layer 203 includes a chemical vapor deposition process.
In this embodiment, the forming process of the second isolation layer 204 includes a high temperature furnace process.
In this embodiment, the material of the first isolation layer 203 is silicon oxide; the material of the second isolation layer 204 is silicon oxide.
Referring to fig. 5, a first opening 205 is formed in the isolation structure and the substrate 200, and the first opening 205 exposes a portion of the first doped region 201 and a portion of the second doped region 202.
In this embodiment, the method for forming the first opening 205 includes: forming an initial first opening (not shown) in the substrate 200, the first isolation layer 203 and the second isolation layer 204; and etching the initial first opening in the second isolation layer 204 to form the first opening 205.
In this embodiment, the first opening 205 in the first isolation layer 203 and the substrate 200 has a first dimension d1, the first opening 205 in the second isolation layer 204 has a second dimension d2, and the second dimension d2 is greater than the first dimension d 1.
In this embodiment, the process of etching the initial first opening in the second isolation layer 204 includes a wet etching process.
Referring to fig. 6, a light absorbing layer 206 is formed in the first opening 205, and a distance d3 between a top sidewall of the first opening 205 and the top sidewall of the light absorbing layer 206 is greater than zero.
In the present embodiment, the first opening 205 is formed in the isolation structure and the substrate 200, and the distance d3 between the top sidewall of the first opening 205 and the top sidewall of the light absorbing layer 206 is greater than zero. So that the interval between the top sidewall of the light absorbing layer 206 and the top sidewall of the first opening 205 is increased. When the dielectric layer is formed subsequently, the dielectric layer can be well filled between the light absorption layer 206 and the isolation structure, so that the generation of a gap problem is reduced, the reliability of the germanium photoelectric detector is effectively improved, and the performance of the finally formed semiconductor structure is improved.
In the present embodiment, the material of the light absorption layer 206 is germanium.
In the present embodiment, the method of forming the light absorbing layer 206 in the first opening 205 includes: the light absorbing layer 206 is formed within the first opening 205 using an epitaxial growth process.
In the present embodiment, the material germanium of the light absorption layer 206, and the light absorption layer 206 is an important component of a germanium photodetector, under the condition of illumination, the light absorption layer 206 generates the conversion of the photoelectric effect, and further separates the free electrons. At this time, a reverse voltage is applied to the first doped region 201 and the second doped region 202, and a current generated by the free electrons separated from the light absorbing layer 206 can be detected, so as to achieve the effect of optical detection.
Referring to fig. 7, after the light absorbing layer 206 is formed, a dielectric layer 207 is formed on the isolation structure, and the dielectric layer 207 covers the light absorbing layer 206.
In this embodiment, the dielectric layer 207 is formed by a chemical vapor deposition process.
The crystal structure of the light absorption layer 206 may be damaged due to high temperature or high density plasma. Therefore, in this embodiment, the dielectric layer may not be formed by a High temperature furnace process with better filling property and a High Density Plasma (High Density Plasma HDP) chemical vapor deposition process, but by a low temperature chemical vapor deposition process.
In this embodiment, the temperature of the chemical vapor deposition process is less than 400 ℃.
In this embodiment, the dielectric layer 207 is made of silicon oxide.
Referring to fig. 8, after the dielectric layer 207 is formed, a light inlet 208 is formed in the dielectric layer 207, and the light inlet 208 is located on the light absorbing layer 206.
In this embodiment, the light inlet 208 is formed in the dielectric layer 207, so that the photosensitivity of the light absorbing layer 206 can be improved, and the electrical performance of the final germanium photodetector can be improved.
In this embodiment, the method for forming the light inlet 208 includes: forming a patterned layer (not shown) on the dielectric layer 207, the patterned layer exposing a portion of the top surface of the dielectric layer 207; and etching the dielectric layer 207 by using the patterning layer as a mask to form the light inlet 208.
Accordingly, an embodiment of the present invention further provides a semiconductor structure, please continue to refer to fig. 8, including: a substrate 200, wherein the substrate 200 has a first doped region 201 and a second doped region 202 separated from each other, the first doped region 201 has first ions therein, the second doped region 202 has second ions therein, and the first ions and the second ions are different in electrical type; an isolation structure on the substrate 200; a first opening 205 in the isolation structure and the substrate 200, wherein the first opening 205 exposes a portion of the first doped region 201 and a portion of the second doped region 202; a light absorbing layer 206 within the first opening 205, and a distance between a top sidewall of the first opening 205 and a top sidewall of the light absorbing layer 206 is greater than zero; a dielectric layer 207 on the isolation structure, wherein the dielectric layer 207 covers the light absorption layer 206.
In the present embodiment, the first opening 205 is located in the isolation structure and the substrate 200, and the distance between the top sidewall of the first opening 205 and the top sidewall of the light absorbing layer 206 is greater than zero. So that the interval between the top sidewall of the light absorbing layer 206 and the top sidewall of the first opening 205 is increased. When the dielectric layer 207 is formed subsequently, the dielectric layer 207 can be well filled between the light absorption layer 206 and the isolation structure, so that the generation of a gap problem is reduced, the reliability of the germanium photoelectric detector is effectively improved, and the performance of a finally formed semiconductor structure is improved.
In the present embodiment, the material of the light absorption layer 206 is germanium.
In this embodiment, the isolation structure includes a first isolation layer 203 and a second isolation layer 204 on the first isolation layer 203.
In this embodiment, the density of the second isolation layer 204 is less than the density of the first isolation layer 203.
In this embodiment, the first ions are N-type ions, and the second ions are P-type ions; in other embodiments, the first ions may also be P-type ions, and the second ions may be N-type ions.
In this embodiment, the method further includes: the light inlet 208 is located in the dielectric layer 207, and the light inlet 208 is located on the light absorbing layer 206.
In this embodiment, the light inlet 208 located in the dielectric layer 207 can improve the light sensitivity of the light absorption layer 206, so as to improve the electrical performance of the final germanium photodetector.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.

Claims (19)

1. A semiconductor structure, comprising:
the ion source comprises a substrate, wherein the substrate is provided with a first doping area and a second doping area which are separated from each other, the first doping area is provided with first ions, the second doping area is provided with second ions, and the first ions and the second ions are different in electric type;
an isolation structure on the substrate;
a first opening in the isolation structure and the substrate, the first opening exposing a portion of the first doped region and a portion of the second doped region;
the light absorption layer is positioned in the first opening, and the distance between the top side wall of the first opening and the top side wall of the light absorption layer is larger than zero;
and the dielectric layer is positioned on the isolation structure and covers the light absorption layer.
2. The semiconductor structure of claim 1, wherein the light absorbing layer comprises a material comprising: and (3) germanium.
3. The semiconductor structure of claim 1, wherein the isolation structure comprises a first isolation layer and a second isolation layer on the first isolation layer.
4. The semiconductor structure of claim 3, wherein a density of the second spacer is less than a density of the first spacer.
5. The semiconductor structure of claim 1, wherein the first ions comprise N-type ions or P-type ions; the second ions include P-type ions or N-type ions.
6. The semiconductor structure of claim 1, further comprising: and the light inlet is positioned in the medium layer and positioned on the light absorption layer.
7. A method of forming a semiconductor structure, comprising:
providing a substrate, wherein the substrate is provided with a first doping area and a second doping area which are separated from each other, the first doping area is provided with first ions, the second doping area is provided with second ions, and the first ions and the second ions are different in electric type;
forming an isolation structure on the substrate;
forming a first opening in the isolation structure and the substrate, wherein the first opening exposes a part of the first doped region and a part of the second doped region;
forming a light absorption layer in the first opening, wherein the distance between the top side wall of the first opening and the top side wall of the light absorption layer is larger than zero;
after the light absorption layer is formed, a dielectric layer is formed on the isolation structure, and the dielectric layer covers the light absorption layer.
8. The method of claim 7, wherein the light absorbing layer comprises a material selected from the group consisting of: and (3) germanium.
9. The method of forming a semiconductor structure of claim 7, wherein the isolation structure comprises a first isolation layer and a second isolation layer over the first isolation layer.
10. The method of forming a semiconductor structure of claim 9, wherein the method of forming the first opening comprises: forming an initial first opening in the substrate, the first isolation layer and the second isolation layer; and etching the initial first opening in the second isolation layer to form the first opening.
11. The method of forming a semiconductor structure of claim 10, wherein a density of the second spacer is less than a density of the first spacer.
12. The method of forming a semiconductor structure of claim 11, wherein the process of etching the initial first opening in the second isolation layer comprises a wet etch process.
13. The method as claimed in claim 7, wherein the step of forming a light absorption layer in the first opening comprises: and forming the light absorption layer in the first opening by adopting an epitaxial growth process.
14. The method of forming a semiconductor structure of claim 9, wherein the first isolation layer comprises a chemical vapor deposition process.
15. The method of claim 9, wherein the forming of the second isolation layer comprises a high temperature furnace process.
16. The method of claim 7, wherein the dielectric layer is formed by a chemical vapor deposition process.
17. The method of forming a semiconductor structure of claim 7, wherein the method of forming the substrate comprises: providing an initial substrate; forming a first patterning layer on the initial substrate, wherein the first patterning layer exposes a part of the top surface of the initial substrate, and performing implantation treatment of first ions on the initial substrate to form the first doped region; after the first doped region is formed, removing the first patterning layer, and forming a second patterning layer on the initial substrate, wherein the second patterning layer exposes a part of the top surface of the initial substrate; and carrying out second ion implantation treatment on the initial substrate to form the second doping area and the substrate.
18. The method of forming a semiconductor structure of claim 7, wherein the first ions comprise N-type ions or P-type ions; the second ions include P-type ions or N-type ions.
19. The method of forming a semiconductor structure of claim 7, further comprising, after forming the dielectric layer: and forming a light inlet in the dielectric layer, wherein the light inlet is positioned on the light absorption layer.
CN202110260919.4A 2021-03-10 2021-03-10 Semiconductor structure and forming method thereof Pending CN115084304A (en)

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Application Number Priority Date Filing Date Title
CN202110260919.4A CN115084304A (en) 2021-03-10 2021-03-10 Semiconductor structure and forming method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110260919.4A CN115084304A (en) 2021-03-10 2021-03-10 Semiconductor structure and forming method thereof

Publications (1)

Publication Number Publication Date
CN115084304A true CN115084304A (en) 2022-09-20

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