CN115083871A - Etching apparatus and etching method - Google Patents
Etching apparatus and etching method Download PDFInfo
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- CN115083871A CN115083871A CN202210880934.3A CN202210880934A CN115083871A CN 115083871 A CN115083871 A CN 115083871A CN 202210880934 A CN202210880934 A CN 202210880934A CN 115083871 A CN115083871 A CN 115083871A
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- 238000005530 etching Methods 0.000 title claims abstract description 74
- 238000000034 method Methods 0.000 title claims abstract description 23
- 238000010438 heat treatment Methods 0.000 claims abstract description 140
- 238000006243 chemical reaction Methods 0.000 claims abstract description 102
- 238000005086 pumping Methods 0.000 claims abstract description 13
- 238000009413 insulation Methods 0.000 claims description 5
- 230000002035 prolonged effect Effects 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 238000012423 maintenance Methods 0.000 description 19
- 230000008569 process Effects 0.000 description 10
- 238000000151 deposition Methods 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 9
- 230000009286 beneficial effect Effects 0.000 description 8
- 230000008021 deposition Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000004321 preservation Methods 0.000 description 6
- 238000001816 cooling Methods 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000005192 partition Methods 0.000 description 4
- 230000002349 favourable effect Effects 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 238000004804 winding Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000005485 electric heating Methods 0.000 description 2
- 239000003344 environmental pollutant Substances 0.000 description 2
- 231100000719 pollutant Toxicity 0.000 description 2
- 238000013024 troubleshooting Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 229920000742 Cotton Polymers 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
- F04D—NON-POSITIVE-DISPLACEMENT PUMPS
- F04D19/00—Axial-flow pumps
- F04D19/02—Multi-stage pumps
- F04D19/04—Multi-stage pumps specially adapted to the production of a high vacuum, e.g. molecular pumps
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
- F04D—NON-POSITIVE-DISPLACEMENT PUMPS
- F04D25/00—Pumping installations or systems
- F04D25/16—Combinations of two or more pumps ; Producing two or more separate gas flows
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- General Engineering & Computer Science (AREA)
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- Manufacturing & Machinery (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The embodiment of the invention provides etching equipment and an etching method, and relates to the technical field of semiconductors. The etching equipment comprises a main reaction box, a heating auxiliary box, a first vacuum system and a second vacuum system; the heating auxiliary box is communicated with the main reaction box; the first vacuum system comprises a first pipeline and a power pump, the first pipeline is communicated with the heating auxiliary box, and the power pump is arranged on the first pipeline and used for pumping the heating auxiliary box and the main reaction box to a first vacuum state; the second vacuum system comprises a second pipeline and a molecular pump, the second pipeline is communicated with the heating auxiliary box, and the molecular pump is arranged on the second pipeline and used for pumping the heating auxiliary box and the main reaction box to a second vacuum state. The first vacuum system and the second vacuum system are separately designed, so that the vacuum pumping efficiency is improved, the molecular pump is protected, the working stability of the molecular pump is improved, and the service life of the molecular pump is prolonged.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to etching equipment and an etching method.
Background
Etching equipment is an important equipment in the semiconductor industry, and is mainly used for etching wafers. Because the tail gas generated in the process reaction cavity contains a large amount of sulfide, fluoride, chloride and the like, the substances are easy to adhere to the inner wall of the pipeline after being cooled, so that the pipeline is blocked or corroded, particularly, the molecular pump is easy to be blocked, and the working efficiency and the service life of the molecular pump are influenced.
Disclosure of Invention
Objects of the present invention include, for example, providing an etching apparatus capable of improving the operating efficiency of a molecular pump and extending the service life of the molecular pump.
Embodiments of the invention may be implemented as follows:
the invention provides etching equipment, which comprises a main reaction box, a heating auxiliary box, a first vacuum system and a second vacuum system, wherein the main reaction box is connected with the heating auxiliary box through a pipeline;
the heating auxiliary box is communicated with the main reaction box;
the first vacuum system comprises a first pipeline and a power pump, the first pipeline is communicated with the heating auxiliary box, and the power pump is arranged on the first pipeline and used for pumping the heating auxiliary box and the main reaction box to a first vacuum state;
the second vacuum system comprises a second pipeline and a molecular pump, the second pipeline is communicated with the heating auxiliary box, and the molecular pump is arranged on the second pipeline and used for pumping the heating auxiliary box and the main reaction box to a second vacuum state.
In an alternative embodiment, one end of the second pipeline is communicated with the first pipeline, the other end of the second pipeline is connected with the molecular pump, and the molecular pump is communicated with the heating auxiliary tank.
In an alternative embodiment, the first pipeline comprises a first section and a second section which are connected with each other, the first section is connected with the heating auxiliary tank, the second pipeline is connected to the first section, and the power pump is arranged on the first section and/or the second section.
In an alternative embodiment, the second vacuum system further comprises a connecting pipe, one end of the connecting pipe is connected with the molecular pump, and the other end of the connecting pipe is connected with the heating sub-tank; the pipe diameters of the connecting pipes are respectively larger than those of the first pipeline and the second pipeline.
In an optional embodiment, the pipe diameter of the connecting pipe is greater than 200mm, and the pipe diameters of the first pipeline and the second pipeline are respectively less than 50 mm.
In an alternative embodiment, the pressure of the heating sub-tank is less than 400mtorr in the first vacuum state, the molecular pump is turned on in the first vacuum state so that the power pump and the molecular pump work together to maintain the second vacuum state, the pressure of the second vacuum state is less than the pressure in the first vacuum state, and the pressure of the heating sub-tank is less than 50mtorr in the second vacuum state.
In an alternative embodiment, one end of the first pipeline close to the heating auxiliary tank is provided with a first angle valve, and the first angle valve is provided with a heating unit; and a second angle valve is arranged on the second pipeline, and a heating unit is arranged on the second angle valve.
In an alternative embodiment, the first pipeline, the second pipeline and the connecting pipe are respectively wound with heating tapes.
In an alternative embodiment, a heating element is provided within the heating sub-tank.
In an alternative embodiment, the inner wall and/or the outer wall of the heating auxiliary box are/is provided with heat preservation guard plates.
In a second aspect, the present invention provides an etching method comprising:
the first vacuum system pumps the heating auxiliary box and the main reaction box to a first vacuum state;
the second vacuum system is started in the first vacuum state and works together with the first vacuum system to pump the heating auxiliary box and the main reaction box to a second vacuum state;
heating the heating auxiliary box after the second vacuum system is started;
and etching the wafer in the main reaction box under the second vacuum state.
In an alternative embodiment, the step of the first vacuum system drawing the heating sub-tank and the main reaction tank to a first vacuum state comprises:
evacuating the pressure of the heating sub-tank and the main reaction tank to less than 400 mtorr;
the second vacuum system is started in the first vacuum state, and the step of pumping the heating auxiliary box and the main reaction box to a second vacuum state by working together with the first vacuum system comprises the following steps:
evacuating the pressure of the heating sub-tank and the main reaction tank to less than 50 mtorr.
In an alternative embodiment, the pressure of the heating sub-tank and the main reaction tank is less than 150mtorr in the first vacuum state.
In an alternative embodiment, the heating sub-tank is heated to 20 ℃ to 60 ℃.
The embodiment of the invention has the following beneficial effects:
according to the etching equipment and the etching method provided by the embodiment of the invention, the first vacuum system and the second vacuum system are separately designed, the first vacuum system is started first, the second vacuum system is started again in the first vacuum state, and the first vacuum system does not influence the second vacuum system during working and running, so that the molecular pump is not easy to block, the working efficiency of the molecular pump is improved, the service life of the molecular pump is prolonged, and the maintenance cost of the molecular pump is reduced.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and those skilled in the art can also obtain other related drawings based on the drawings without inventive efforts.
Fig. 1 is a schematic view of a first view of a connection structure of a molecular pump, a first vacuum system, and a second vacuum system of an etching apparatus according to an embodiment of the present invention;
fig. 2 is a schematic diagram of a second view angle of a connection structure of a molecular pump, a first vacuum system and a second vacuum system of an etching apparatus according to an embodiment of the present invention;
FIG. 3 is a schematic distribution diagram of a molecular pump, a first vacuum system and a second vacuum system of an etching apparatus provided in an embodiment of the present invention in the etching apparatus;
FIG. 4 is a schematic structural diagram of a first viewing angle of an etching apparatus according to an embodiment of the present invention;
FIG. 5 is a schematic structural diagram of a second viewing angle of an etching apparatus according to an embodiment of the present invention;
FIG. 6 is a schematic view of a partial cross-sectional view A-A of FIG. 5;
fig. 7 is a schematic structural diagram of an etching apparatus according to an embodiment of the present invention after the first cabinet is removed;
fig. 8 is a schematic structural diagram of an installation scenario of a first base of an etching apparatus according to an embodiment of the present invention.
Icon: 10-an etching apparatus; 20-a first vacuum system; 21-a first conduit; 211 — first segment; 213-a second section; 215-vertical section; 217-horizontal segment; 23-a first angle valve; 40-a second vacuum system; 41-a second conduit; 43-connecting tube; 45-a second angle valve; 100-an electrical control cabinet; 110-a first side facade; 120-a second side facade; 130-a first cabinet; 140-a first base; 141-a first base plate; 143-a first side wall; 145-a second sidewall; 150-a first mounting hole; 160-second mounting hole; 200-special gas cabinet; 210-a second cabinet; 220-a first gas delivery conduit; 221-a first subsection; 223-a second subsection; 225-third subsection; 227-fourth division; 230-a second air delivery conduit; 231-a first branch pipe; 233-second branch pipe; 235-a third branched pipe; 237-fourth minute pipe; 300-main reaction cabinet; 310-a bottom surface; 320-top surface; 330-a first surface; 340-a second surface; 350-a third surface; 360-a fourth surface; 371-walk the line board; 373-a cable plugging module; 380-frame; 390-a cover plate; 391-appearance protection plate; 400-a main reaction tank; 500-a first frequency matching box; 600-a second frequency matching box; 700-heating the auxiliary box; 710-heat preservation guard board; 730-a heating element; 800-molecular pump; 810-a separator; 1000-compressed air system; 1100-cooling the pipe.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the present invention, it should be noted that if the terms "upper", "lower", "inside", "outside", etc. indicate an orientation or a positional relationship based on that shown in the drawings or that the product of the present invention is used as it is, this is only for convenience of description and simplification of the description, and it does not indicate or imply that the device or the element referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus should not be construed as limiting the present invention.
Furthermore, the appearances of the terms "first," "second," and the like, if any, are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance.
It should be noted that the features of the embodiments of the present invention may be combined with each other without conflict.
Referring to fig. 1 to 4, an etching apparatus 10 according to an embodiment of the present invention includes a main reaction chamber 400, a heating sub-chamber 700, a first vacuum system 20, and a second vacuum system 40; the first vacuum system 20 can rapidly pump the pressure of the heating sub-tank 700 and the main reaction tank 400 to a first vacuum state, the second vacuum system 40 is started under the first vacuum state, and the first vacuum system 20 and the second vacuum system 40 act together to rapidly pump the pressure of the heating sub-tank 700 and the main reaction tank 400 to a second vacuum state so as to meet the requirements of the etching process. Therefore, the pressure required by etching can be quickly achieved, the working efficiency is improved, the vacuum degree can be maintained, and the tail gas in the etching process is discharged to prevent the tail gas from being deposited.
The heating sub-tank 700 is communicated with the main reaction tank 400; the first vacuum system 20 comprises a first pipeline 21 and a power pump (not shown), wherein the first pipeline 21 is communicated with the heating auxiliary tank 700, and the power pump is arranged on the first pipeline 21 and is used for pumping the heating auxiliary tank 700 and the main reaction tank 400 to a first vacuum state; the second vacuum system 40 comprises a second pipeline 41 and a molecular pump 800, the second pipeline 41 is communicated with the heating sub-tank 700, and the molecular pump 800 is arranged on the second pipeline 41 and is used for pumping the heating sub-tank 700 and the main reaction tank 400 to a second vacuum state. The first vacuum system 20 and the second vacuum system 40 are separately designed, the first vacuum system 20 does not affect the second vacuum system 40 when operating, when the first vacuum system 20 starts to operate, because the first vacuum system 20 has a large suction force when operating, the normal pressure state is pumped to the first vacuum state, the pressure change span is large, the suction speed is fast, the gas flow is large, and the gas flow may contain pollutants, if the first vacuum system 20 and the second vacuum system 40 are designed in a collinear manner, the molecular pump 800 is easily blocked, the first vacuum system 20 and the second vacuum system 40 are separately designed, and the part of the gas flow of the first vacuum system 20 which just starts to operate does not pass through the second vacuum system 40, which is beneficial to improving the working efficiency of the molecular pump 800, prolonging the service life of the molecular pump 800, and reducing the maintenance cost of the molecular pump 800.
The heating sub-tank 700 is connected to one side of the main reaction tank 400 and is communicated with the main reaction tank 400; the heating sub-tank 700 is connected to the first vacuum system 20 and the second vacuum system 40, respectively, to exhaust the gas in the main reaction tank 400. The arrangement of the heating auxiliary box 700 can ensure that the tail gas in the etching process in the main reaction box 400 is discharged in time, thereby avoiding tail gas deposition and being beneficial to improving the etching efficiency and the etching quality. It can be understood that the heating sub-tank 700 can increase the temperature of the tail gas, and the tail gas is more active and not easy to deposit on the inner wall of the main reaction tank 400 and the inner wall of the heating sub-tank 700, so that the tail gas is easy to suck away, and the corrosion of the tank body or the influence on the etching quality of the wafer are avoided. In addition, the provision of the heating sub-tank 700 enables the suction direction of the gas flow to be changed, and particularly prevents the off-gas from being deposited on the bottom wall of the main reaction tank 400. If the heating sub-tank 700 is not provided, the gas flow is sucked in a direction from top to bottom, and is easily deposited on the bottom of the main reaction tank 400, because the gas flow cannot completely cover the bottom wall of the main reaction tank 400 at the outlet size of the main reaction tank 400, dead corners of the deposition of the off-gas exist on the bottom wall of the main reaction tank 400, and the off-gas deposited at the dead corners easily contaminates the wafer and affects the etching efficiency and the etching quality. In this embodiment, the heating sub-tank 700 is horizontally disposed at one side of the main reaction tank 400, so that the airflow enters the heating sub-tank 700 from the main reaction tank 400 in the horizontal direction and is sucked away from the heating sub-tank 700, thereby changing the direction of the airflow, preventing the airflow from depositing at the bottom of the main reaction tank 400, preventing the tail gas from polluting the wafer, and further facilitating the improvement of the etching efficiency and the etching quality. Although the heating sub-tank 700 has a certain dead angle for gas deposition, the temperature of the heating sub-tank 700 is high, and the gas flow does not vertically enter the heating sub-tank 700 from top to bottom, so that the gas is not deposited at the bottom of the heating sub-tank 700, and further the wafers in the main reaction tank 400 are not polluted, and no pollution deposition phenomenon is found at the bottom of the main reaction tank 400 and the heating sub-tank 700 of the embodiment after long-term use.
Alternatively, the heating sub-tank 700 may be heated after the second vacuum system 40 is turned on, that is, the heating sub-tank 700 may be heated to any value within the interval of 20 ℃ to 60 ℃, such as 25 ℃, 30 ℃, 35 ℃, 40 ℃, 45 ℃, 50 ℃, 55 ℃, 60 ℃ and the like immediately after the molecular pump 800 is turned on, and is not limited herein.
Alternatively, one end of the second pipeline 41 is communicated with the first pipeline 21, the other end of the second pipeline 41 is connected with the molecular pump 800, and the molecular pump 800 is communicated with the heating sub-tank 700. Of course, in other embodiments, the first pipeline 21 and the second pipeline 41 may be independent of each other, and are not limited herein.
The first pipeline 21 comprises a first section 211 and a second section 213 which are connected with each other, the first section 211 is connected with the heating sub-tank 700, the second pipeline 41 is connected to the first section 211, and a power pump is arranged on the first section 211 and/or the second section 213, namely at least one of the first section 211 and the second section 213 is provided with a power pump. In this embodiment, the power pump is disposed on the second segment 213, and the end of the second pipeline 41 far away from the molecular pump 800 is connected to the first segment 211.
Optionally, the second vacuum system 40 further includes a connection pipe 43, the connection pipe 43 is disposed between the molecular pump 800 and the heating sub-tank 700, one end of the connection pipe 43 is connected to the molecular pump 800, and the other end of the connection pipe 43 is connected to the heating sub-tank 700; it is understood that the connection pipe 43 serves as an inlet pipe of the molecular pump 800, the second pipe 41 serves as an outlet pipe of the molecular pump 800, and the molecular pump 800 serves to exhaust the gas in the heating sub-tank 700. In this embodiment, the pipe diameters of the connecting pipes 43 are respectively larger than those of the first pipeline 21 and the second pipeline 41. Wherein, the pipe diameter of the connecting pipe 43 is greater than 200mm, such as 250 mm; the power pump in the first vacuum system 20 is controlled to rapidly evacuate and meet the requirement of the first vacuum state, the pipe diameter of the first pipeline 21 and the pipe diameter of the second pipeline 41 are respectively required to be less than 50mm, for example, the pipe diameter of the first pipeline 21 and the pipe diameter of the second pipeline 41 are equal and are respectively 38mm, if the pipe diameter is greater than 50mm, the evacuation efficiency is low and the requirement of rapidly evacuating to less than 400mtorr cannot be achieved. The connecting pipe 43 adopts an independent pipe design, so that a larger pipe diameter can be adopted, the air extraction efficiency is improved, namely the exhaust efficiency of the tail gas in the heating auxiliary box 700 is higher, and the tail gas is prevented from depositing in the main reaction box 400 and the heating auxiliary box 700 to pollute the wafer; the exhaust gas can be prevented from being deposited on the inner wall of the connecting pipe 43 to block the connecting pipe 43 or the molecular pump 800, the smoothness and the stability of exhaust are improved, the working efficiency of the molecular pump 800 can be further improved, the service life of the molecular pump 800 is prolonged, and the maintenance cost of the molecular pump 800 is reduced.
In the first vacuum state, the pressure of the heating sub-tank 700 is less than 400mtorr, i.e. the pressure in the heating sub-tank 700 and the pressure in the main reaction tank 400 can be reduced to less than 400mtorr by the operation of a single power pump, such as 100mtorr, 150mtorr or 200 mtorr; the molecular pump 800 is turned on in the first vacuum state so that the power pump and the molecular pump 800 work together to maintain the second vacuum state having a pressure less than that in the first vacuum state, which is generally less than 50 mtorr. In actual work, before the etching process is carried out, the power pump is started, the power pump works for a period of time, the pressure of the heating auxiliary box 700 is maintained to be lower than 400mtorr, if the pressure is reduced to 150mtorr, then the molecular pump 800 is started, and the pressure of the heating auxiliary box 700 is maintained to be lower than 50mtorr so as to meet the etching requirement; during the etching process of the wafer, the power pump and the molecular pump 800 always maintain the main reaction box 400 and the heating sub-box 700 in the second vacuum state to improve the etching efficiency and quality, and simultaneously exhaust tail gas generated by etching in time, so that it is easy to understand that the molecular pump 800 needs to be opened in the first vacuum state to avoid the molecular pump 800 being damaged due to the opening in the case of higher pressure.
It can be understood that in the present embodiment, the first vacuum system 20 and the second vacuum system 40 are separately designed, that is, the molecular pump 800 uses independent pipelines (the connection pipe 43 and the second pipeline 41) for exhausting, so that when the power pump works alone before the etching process, a higher pressure gas and a large amount of gas that may contain corrosion or pollution do not pass through the molecular pump 800, thereby preventing the molecular pump 800 from being damaged, which is beneficial to protecting the molecular pump 800 and prolonging the service life of the molecular pump 800.
Optionally, one end of the first pipeline 21 close to the heating sub-tank 700 is provided with a first angle valve 23, and the first angle valve 23 is provided with a heating unit; a second angle valve 45 is provided on the second pipe 41, and the second angle valve 45 is provided with a heating unit (not shown). The heating unit may be an electric heating wire disposed in the first angle valve 23 and the second angle valve 45, or steam or the like introduced into the first angle valve 23 and the second angle valve 45, or may also be heat insulation cotton or heat insulation board or the like disposed on the first angle valve 23 and the second angle valve 45. Through setting up the heating unit, can prevent the tail gas deposit, be favorable to tail gas in time to discharge, prevent the corruption of tail gas to the pipeline.
Referring to fig. 4, optionally, heating tapes (not shown) are wound on the first pipeline 21, the second pipeline 41 and the connecting pipe 43, respectively. A heating element 730 is arranged in the heating sub-tank 700, and the heating element 730 can be an electric heating wire or the like. The inner wall and/or the outer wall of the heating sub-tank 700 are/is provided with a heat insulation shield 710, that is, at least one of the inner wall and the outer wall of the heating sub-tank 700 is provided with a heat insulation shield 710. The measures of heat preservation and heating can also prevent tail gas from depositing, facilitate the timely discharge of the tail gas and prevent the corrosion of the tail gas to the pipeline.
With reference to fig. 5 to 8, optionally, the etching apparatus 10 further includes an electrical control cabinet 100, a special gas cabinet 200, and a main reaction cabinet 300, wherein the electrical control cabinet 100 has a first side elevation 110 and a second side elevation 120 connected adjacently, the main reaction cabinet 300 is disposed on one side of the first side elevation 110, and the special gas cabinet 200 is disposed on one side of the second side elevation 120; the layout structure is more compact, the occupied area is smaller, and the space can be saved. It is easy to understand, and special gas cabinet 200 and main reaction cabinet 300 all need follow electrical control cabinet 100 wiring, and the connection distance that can effectively shorten all kinds of cable circuits sets up like this, and convenient wiring reduces the wire winding that remote wire winding brought and scrambles the scheduling problem. A wiring board 371 is disposed on one side of the main reaction cabinet 300 close to the electrical control cabinet 100, and a plurality of cable plugging modules 373 are disposed on the wiring board 371. In this embodiment, a plurality of cable grafting modules 373 can realize that the subregion of all kinds of cables divides the functional connection, for example, the cable of special gas holder 200 is connected on a cable grafting module 373, the cable of the high frequency matching box of main reaction cabinet 300 is connected on a cable grafting module 373, the cable of low frequency matching box is connected on a cable grafting module 373, the cable circuit is clear like this, the staff is more directly perceived when overhauing and looking over, be favorable to improving maintenance and maintenance efficiency, if equipment appears unusually or trouble, the maintenance is also more time-saving and laborsaving. It should be understood that the cable plug-in module 373 employs a fast plug-in interface, which facilitates fast installation and removal of various cables.
The main reaction cabinet 300 includes a bottom surface 310, a top surface 320, a first surface 330, and a second surface 340; the bottom surface 310 and the top surface 320 are oppositely arranged, the first surface 330 and the second surface 340 are oppositely arranged, the bottom surface 310 is respectively connected with the first surface 330 and the second surface 340, and the top surface 320 is respectively connected with the first surface 330 and the second surface 340; the first surface 330 is disposed opposite to the first side surface 110, and the wiring board 371 is disposed on the first surface 330.
The side of the top surface 320 far away from the bottom surface 310 is provided with a main reaction box 400, the side of the main reaction box 400 far away from the top surface 320 is provided with a first frequency matching box 500, a second frequency matching box 600 is arranged between the top surface 320 and the bottom surface 310, and the first frequency matching box 500 and the second frequency matching box 600 are respectively connected with the main reaction box 400. In this embodiment, the first frequency matching box 500 is a high frequency matching box, and the second frequency matching box 600 is a low frequency matching box.
The side of the main reaction box 400 close to the electrical control cabinet 100 is provided with a heating auxiliary box 700, the heating auxiliary box 700 is installed on the top surface 320, and the heating auxiliary box 700 is communicated with the main reaction box 400. Optionally, the heating sub-tank 700 is a substantially rectangular tank body, and includes six surfaces, one of which is connected to the main reaction tank 400, and the remaining five surfaces are respectively provided with a heat-insulating protection plate 710; the heating element 730 is arranged in the heating sub-tank 700, and the heating element 730 is arranged on one side of the heating sub-tank 700 far away from the main reaction tank 400. The heating sub-tank 700 serves as a non-process end at the rear end of the main reaction tank 400, heats and preserves heat of the heating sub-tank 700, can balance the temperature of tail gas, protect the first vacuum system 20 and the second vacuum system 40, and can prevent etching solution from remaining on the inner wall of the pipeline to cause corrosion of the pipeline.
The molecular pump 800 is disposed between the top surface 320 and the bottom surface 310, the partition 810 is disposed between the molecular pump 800 and the second frequency matching box 600, the molecular pump 800 is closer to the electrical control cabinet 100 than the second frequency matching box 600, that is, the molecular pump 800 is disposed on a side of the partition 810 close to the electrical control cabinet 100, and the second frequency matching box 600 is disposed on a side of the partition 810 away from the electrical control cabinet 100. The molecular pump 800 and the second frequency matching box 600 are separately provided by using a partition plate 810, which facilitates installation and maintenance.
The electrical control cabinet 100 comprises a first cabinet body 130 and a first base 140 which are detachably connected, wherein the first cabinet body 130 is provided with a first side vertical surface 110 and a second side vertical surface 120 which are adjacent; one end of the first base 140 close to the special gas cabinet 200 is provided with a first mounting hole 150, the first mounting hole 150 is used for mounting the horizontal section 217 of the second section 213, and the vertical section 215 and the first section 211 are arranged along the height direction of the first cabinet body 130, that is, are arranged vertically. The second section 213 of the first pipeline 21 is used as a common pipeline for the molecular pump 800 and the power pump to discharge tail gas, and the horizontal section 217 and the vertical section 215 are arranged in such a way, so that the structure is more compact, and the layout is more reasonable.
The main reaction cabinet 300 further comprises a third surface 350 and a fourth surface 360 which are oppositely arranged, and the first surface 330, the second surface 340, the third surface 350 and the fourth surface 360 form four sides of the main reaction cabinet 300; in the view shown in fig. 4, the first surface 330 and the second surface 340 are two left and right side surfaces, and the third surface 350 and the fourth surface 360 are two front and rear side surfaces. The third surface 350 is close to the special gas cabinet 200 relative to the fourth surface 360, that is, the third surface 350 is the front, and the main pipeline is arranged at one side of the third surface 350 of the main reaction cabinet 300, which is beneficial to shortening the pipeline arrangement distance.
The first base 140 is provided with a compressed air system 1000, and the compressed air system 1000 is disposed at an end of the first base 140 far away from the special gas cabinet 200 and close to the main reaction cabinet 300. The compressed air system 1000 is disposed near the corner of the first base 140, so as to optimize the spatial layout, thereby facilitating the routing of the lines and also providing more layout space for other components, such as the arrangement of the water path system, the first vacuum system 20, and the second vacuum system 40.
A water channel system is arranged on the first base 140, the water channel system comprises a cooling pipeline 1100, the first base 140 comprises a first bottom plate 141, a first side wall 143 and a second side wall 145, the first side wall 143 and the second side wall 145 are oppositely arranged and are respectively connected with the first bottom plate 141, the first side wall 143 is connected with the main reaction cabinet 300, second mounting holes 160 are respectively formed in the first side wall 143 and the second side wall 145, and the cooling pipeline 1100 penetrates through the second mounting holes 160, extends into the main reaction cabinet 300 and is connected with the molecular pump 800. The cooling pipeline 1100 is arranged on the first base 140 and is arranged along the bottom of the first cabinet 130, the bottom space of the first cabinet 130 is reasonably utilized, the first cabinet 130 and the first base 140 are detachably connected, when the maintenance is needed, the first cabinet 130 can be detached, the maintenance or replacement of various systems (including but not limited to the compressed air system 1000, the first vacuum system 20, the water path system and the like) on the first base 140 is facilitated, and the maintenance operation space is large. Optionally, the portions of the cooling pipeline 1100 in the cabinet body (the portions located in the first base 140 and the main reaction cabinet 300) are connected by using stainless steel hard pipes, so that the service life is longer, the maintenance frequency can be reduced, and the maintenance period can be prolonged; the part outside the cabinet body can adopt PFA pipe flexible connection, thereby saving space and optimizing arrangement.
The special gas holder 200 comprises a second holder body 210 and a first gas pipe 220 arranged on the second holder body 210, wherein the first gas pipe 220 is used for being connected with the main reaction box 400, and can introduce special gas into the main reaction box 400 to promote the etching reaction of the main reaction box 400 and improve the etching efficiency and quality. The first air delivery pipe 220 comprises a first subsection 221, a second subsection 223, a third subsection 225 and a fourth subsection 227 which are communicated in sequence; the first section 221 is disposed on the upper surface of the second cabinet 210 and connected to the second cabinet 210, the second section 223 is disposed between the second cabinet 210 and the second side elevation 120, the third section 225 is disposed between the first side elevation 110 and the first surface 330, and the fourth section 227 is disposed along the top surface 320 and is in communication with the main reaction box 400.
Optionally, the special gas holder 200 is provided with a second gas pipe 230, and the second gas pipe 230 comprises a first branched pipe 231, a second branched pipe 233, a third branched pipe 235 and a fourth branched pipe 237 which are connected in sequence; the first branch pipe 231 is arranged on the upper surface of the second cabinet 210, and the first branch pipe 231 and the first branch part 221 are respectively arranged on two sides of the second cabinet 210; the second branch pipe 233 is arranged between the second cabinet 210 and the second side vertical surface 120, and is parallel to the upper surface of the second cabinet 210 and the second side vertical surface 120 respectively; the third branched pipe 235 is disposed in parallel with the first segment 211, and the fourth branched pipe 237 is connected to the first segment 211. The first air conveying pipe 220 and the second air conveying pipe 230 can also be used for flushing the pipelines, so that the deposition of residual etching liquid in the pipelines and the box body is reduced. First gas-supply pipe 220 and second gas-supply pipe 230 adopt horizontal flat vertical mode of laying respectively, the connection of the adapter of being convenient for, and be favorable to special gaseous smooth and easy flow, and secondly, this kind of pipeline mode of laying is clear, does not overlap with other circuit crossovers, and the arrangement is clear, easy access and troubleshooting.
The main reaction cabinet 300 comprises a frame 380 and a cover plate 390, the frame 380 comprises a plurality of columns and beams, the beams and the columns are overlapped to form a frame 380 structure, the cover plate 390 is detachably connected with the frame 380, and the cover plate 390 is sealed at the periphery of the frame 380 to play a role in dust prevention and protection. The cover plate 390 and the frame 380 enclose to form a third cabinet, the molecular pump 800 and the second frequency matching box 600 are disposed in the third cabinet, the main reaction box 400 and the auxiliary heating box 700 are disposed above the third cabinet, and the first frequency matching box 500 is disposed on the main reaction box 400. It can be understood that the cover plate 390 and the frame 380 are quick-release structures, which facilitates assembly and disassembly, and after the cover plate 390 is disassembled, the operation space is large, which facilitates the maintenance and repair of various systems, components, etc.
In addition, in this embodiment, the bottom of the main reaction cabinet 300, the bottom of the electrical control cabinet 100, and the bottom of the special gas cabinet 200 are respectively provided with a moving wheel, so that the moving is more convenient. The main cover plate 390 edge of the reaction cabinet 300 is also provided with an appearance protection plate 391, the appearance protection plate 391 is mainly arranged at the juncture of the top surface 320 and the third surface 350, so that the dustproof and waterproof effect is achieved, the decoration and the attractive effect are achieved, the appearance layout tends to serialization, the identification degree is high, the effect of distinguishing product series is achieved, and the product model and the product series can be intuitively mastered during maintenance or sale.
The embodiment of the invention also provides an etching method, firstly, the first vacuum system 20 pumps the heating auxiliary box 700 and the main reaction box 400 to a first vacuum state; the second vacuum system 40 is started in the first vacuum state and works together with the first vacuum system 20 to pump the heating sub-tank 700 and the main reaction tank 400 to the second vacuum state; the wafers in the main reaction chamber 400 are etched in the second vacuum state. The first vacuum system 20 is firstly started, the pressure of the heating sub-tank 700 and the pressure of the main reaction tank 400 can be quickly pumped to a first vacuum state, the second vacuum system 40 is started under the first vacuum state, and the first vacuum system 20 and the second vacuum system 40 act together, so that the pressure of the heating sub-tank 700 and the pressure of the main reaction tank 400 can be quickly pumped to a second vacuum state to meet the requirements of the etching process. Therefore, the pressure required by etching can be quickly achieved, the working efficiency is improved, the vacuum degree can be maintained, the etching requirement is met, and the tail gas in the etching process is discharged to prevent the tail gas from being deposited. After the molecular pump 800 in the first vacuum system 20 is started, the heating element 730 is immediately started to heat the heating sub-tank 700, the heating can be carried out to 20 ℃ to 60 ℃, the heat-preservation protection plate 710 in the heating sub-tank 700 can realize a good heat-preservation effect, the heating sub-tank 700 is maintained in a better temperature range, the deposition of tail gas is favorably prevented, the exhaust efficiency is higher, and the exhaust effect is better. The first vacuum system 20 and the second vacuum system 40 are separately designed, so that the damage to the molecular pump 800 caused by the working conditions (large pressure change span, high pumping speed, large gas flow and possible pollutant contained in the gas flow) when the first vacuum system 20 starts to work can be prevented, the work efficiency of the molecular pump 800 can be improved, the service life of the molecular pump 800 can be prolonged, and the maintenance cost of the molecular pump 800 can be reduced.
Optionally, the step of the first vacuum system 20 pumping the heating sub-tank 700 and the main reaction tank 400 to the first vacuum state comprises: evacuating the pressure of the heating sub-tank 700 and the main reaction tank 400 to less than 400 mtorr; such as 100mtorr, 150mtorr, or 200mtorr, etc.; in the second vacuum state, the pressure for heating the sub-tank 700 and the main reaction tank 400 is less than 50mtorr, which is advantageous for improving the etching quality. Further, in the first vacuum state, the pressure for heating the sub-tank 700 and the main reaction tank 400 is less than 150mtorr, which is beneficial to reducing the impact and damage to the molecular pump 800, prolonging the service life of the molecular pump 800, and improving the working efficiency of the molecular pump 800.
In summary, the etching apparatus 10 and the etching method provided by the embodiment of the invention have the following beneficial effects:
according to the etching equipment 10 and the etching method provided by the embodiment of the invention, the first vacuum system 20 and the second vacuum system 40 are separately designed, and the first vacuum system 20 does not influence the second vacuum system 40 when in operation, so that the molecular pump 800 is not easy to block, the working efficiency of the molecular pump 800 is improved, the service life of the molecular pump 800 is prolonged, and the maintenance cost of the molecular pump 800 is reduced. The connecting pipe 43 has a larger pipe diameter, so that the pumping efficiency can be improved, the molecular pump 800 is prevented from being blocked or corroded, and the service life of the molecular pump 800 is prolonged. The measures of heat preservation and heating can also prevent the tail gas from being deposited, thereby being beneficial to the timely discharge of the tail gas and preventing the corrosion of the tail gas to the pipeline.
In addition, the main reaction cabinet 300 and the special gas cabinet 200 are respectively arranged at two adjacent sides of the electrical control cabinet 100, the structure is compact, the main reaction cabinet 300 and the special gas cabinet 200 are convenient to be respectively connected with cables of the electrical control cabinet 100, the wiring distance is relatively short, and long-distance winding and arrangement are avoided; and the wiring board 371 is arranged, so that the wiring board can divide various cable circuits into regions and perform functional connection, the control function of each circuit is clear and more visual, the maintenance efficiency is improved, and the time and the labor are saved during maintenance. The main reaction cabinet 300, the electrical control cabinet 100 and the special gas cabinet 200 are arranged in a modularized mode, the main reaction cabinet 300 can be subdivided into the molecular pump 800, the main reaction box 400, the heating auxiliary box 700, the first frequency matching box 500, the second frequency matching box 600 and other submodules, modular design, assembly and sale can be realized, rapid assembly and production can be conveniently carried out, when faults occur, the troubleshooting efficiency is high, the first cabinet body 130 and the first base 140 are of quick-release structures, the frame 380 and the cover plate 390 of the main reaction cabinet 300 are of quick-release structures, assembly and disassembly are convenient, and the maintenance operation space is large after disassembly.
The above description is only for the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (14)
1. An etching apparatus, comprising a main reaction chamber (400), a heating sub-chamber (700), a first vacuum system (20), and a second vacuum system (40);
the heating auxiliary box (700) is communicated with the main reaction box (400);
the first vacuum system (20) comprises a first pipeline (21) and a power pump, the first pipeline (21) is communicated with the auxiliary heating box (700), and the power pump is arranged on the first pipeline (21) and is used for pumping the auxiliary heating box (700) and the main reaction box (400) to a first vacuum state;
the second vacuum system (40) comprises a second pipeline (41) and a molecular pump (800), the second pipeline (41) is communicated with the heating auxiliary box (700), and the molecular pump (800) is arranged on the second pipeline (41) and used for pumping the heating auxiliary box (700) and the main reaction box (400) to a second vacuum state.
2. The etching apparatus according to claim 1, wherein one end of the second pipe (41) communicates with the first pipe (21), the other end of the second pipe (41) is connected with the molecular pump (800), and the molecular pump (800) communicates with the heating sub-tank (700).
3. The etching apparatus according to claim 1, wherein the first pipe (21) comprises a first section (211) and a second section (213) connected to each other, the first section (211) is connected to the heating sub-tank (700), the second pipe (41) is connected to the first section (211), and the power pump is provided on the first section (211) and/or the second section (213).
4. The etching apparatus according to claim 1, wherein the second vacuum system (40) further comprises a connection pipe (43), one end of the connection pipe (43) is connected to the molecular pump (800), and the other end of the connection pipe (43) is connected to the heating sub-tank (700); the pipe diameters of the connecting pipes (43) are respectively larger than those of the first pipeline (21) and the second pipeline (41).
5. Etching apparatus according to claim 4, characterized in that the pipe diameter of the connecting pipe (43) is greater than 200mm, the pipe diameters of the first and second pipes (21, 41) being respectively less than 50 mm.
6. The etching apparatus according to claim 1, wherein the pressure of the heating sub-tank (700) is less than 400mtorr in the first vacuum state, the molecular pump (800) is turned on in the first vacuum state so that the power pump and the molecular pump (800) work together to maintain the second vacuum state, the pressure of the second vacuum state is less than the pressure in the first vacuum state, and the pressure of the heating sub-tank (700) is less than 50mtorr in the second vacuum state.
7. Etching apparatus according to claim 1, characterized in that the end of the first pipe (21) close to the heating subtank (700) is provided with a first angle valve (23), the first angle valve (23) being provided with a heating unit; and a second angle valve (45) is arranged on the second pipeline (41), and a heating unit is arranged on the second angle valve (45).
8. Etching apparatus according to claim 1, wherein the first and second conduits (21, 41) are each wound with a heating tape.
9. Etching apparatus according to claim 1, characterized in that a heating element (730) is provided in the heating sub-tank (700).
10. Etching apparatus according to any of claims 1 to 9, characterized in that the inner and/or outer walls of the heating sub-tank (700) are provided with insulation shields (710).
11. An etching method, comprising:
the first vacuum system (20) pumps the heating auxiliary box (700) and the main reaction box (400) to a first vacuum state;
a second vacuum system (40) is started in the first vacuum state and works together with the first vacuum system (20) to pump the heating auxiliary box (700) and the main reaction box (400) to a second vacuum state;
-heating the heating sub-tank (700) after the second vacuum system (40) is switched on;
etching the wafer in the main reaction chamber (400) in the second vacuum state.
12. The etching method according to claim 11, wherein the step of drawing the heating sub-tank (700) and the main reaction tank (400) to the first vacuum state by the first vacuum system (20) comprises:
evacuating the pressure of the heating sub-tank (700) and the main reaction tank (400) to less than 400 mtorr;
the second vacuum system (40) is turned on in the first vacuum state, and the step of drawing the heating sub-tank (700) and the main reaction tank (400) to a second vacuum state in cooperation with the first vacuum system (20) comprises:
evacuating the pressure of the heating sub-tank (700) and the main reaction tank (400) to less than 50 mtorr.
13. The etching method according to claim 12, wherein the pressure of the heating sub-tank (700) and the main reaction tank (400) is less than 150mtorr in the first vacuum state.
14. Etching method according to claim 11, characterized in that the heating sub-tank (700) is heated to 20 to 60 ℃.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115360129A (en) * | 2022-10-24 | 2022-11-18 | 无锡邑文电子科技有限公司 | Side-vacuumizing etching machine |
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Address after: 226400 No.1 Jinshan Road, zuegang street, Rudong County, Nantong City, Jiangsu Province Patentee after: Jiangsu Yiwen Microelectronics Technology Co.,Ltd. Patentee after: Wuxi Yiwen Microelectronics Technology Co.,Ltd. Address before: 226400 No.1 Jinshan Road, zuegang street, Rudong County, Nantong City, Jiangsu Province Patentee before: Jiangsu Yiwen Microelectronics Technology Co.,Ltd. Patentee before: WUXI YIWEN ELECTRONIC TECHNOLOGY Co.,Ltd. |