CN115070973A - Production process of monocrystalline silicon wafer - Google Patents
Production process of monocrystalline silicon wafer Download PDFInfo
- Publication number
- CN115070973A CN115070973A CN202210808423.0A CN202210808423A CN115070973A CN 115070973 A CN115070973 A CN 115070973A CN 202210808423 A CN202210808423 A CN 202210808423A CN 115070973 A CN115070973 A CN 115070973A
- Authority
- CN
- China
- Prior art keywords
- monocrystalline silicon
- silicon wafer
- grinding
- chamfering
- cutting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 51
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 235000012431 wafers Nutrition 0.000 claims abstract description 52
- 238000005520 cutting process Methods 0.000 claims abstract description 17
- 230000009471 action Effects 0.000 claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims abstract description 6
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 6
- 239000010703 silicon Substances 0.000 claims abstract description 6
- 239000000110 cooling liquid Substances 0.000 claims abstract description 4
- 230000008569 process Effects 0.000 claims abstract description 4
- 230000003746 surface roughness Effects 0.000 claims abstract description 4
- 238000001035 drying Methods 0.000 claims description 9
- 238000004140 cleaning Methods 0.000 claims description 6
- 238000001514 detection method Methods 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 4
- 230000002950 deficient Effects 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 238000012216 screening Methods 0.000 claims description 3
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 3
- 239000012530 fluid Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B07—SEPARATING SOLIDS FROM SOLIDS; SORTING
- B07C—POSTAL SORTING; SORTING INDIVIDUAL ARTICLES, OR BULK MATERIAL FIT TO BE SORTED PIECE-MEAL, e.g. BY PICKING
- B07C5/00—Sorting according to a characteristic or feature of the articles or material being sorted, e.g. by control effected by devices which detect or measure such characteristic or feature; Sorting by manually actuated devices, e.g. switches
- B07C5/04—Sorting according to size
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B07—SEPARATING SOLIDS FROM SOLIDS; SORTING
- B07C—POSTAL SORTING; SORTING INDIVIDUAL ARTICLES, OR BULK MATERIAL FIT TO BE SORTED PIECE-MEAL, e.g. BY PICKING
- B07C5/00—Sorting according to a characteristic or feature of the articles or material being sorted, e.g. by control effected by devices which detect or measure such characteristic or feature; Sorting by manually actuated devices, e.g. switches
- B07C5/34—Sorting according to other particular properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention provides a production process of a monocrystalline silicon wafer, and relates to the technical field of silicon wafer production. The production process of the monocrystalline silicon wafer comprises the following steps of S1 and cutting: under the action of the cooling liquid, cutting the monocrystalline silicon wafer into monocrystalline silicon wafers with different size requirements by using a multi-wire cutting device, and S2, grinding: under the action of grinding fluid, the upper surface and the lower surface of the monocrystalline silicon wafer in S1 are ground by using a double-sided grinding device, so that the surface roughness of the monocrystalline silicon wafer meets the process requirements.
Description
Technical Field
The invention relates to the technical field of silicon wafer production, in particular to a production process of a monocrystalline silicon wafer.
Background
A single crystal silicon wafer is a single crystal of silicon, which is a crystal having a substantially complete lattice structure. Different directions have different properties, and the material is a good semiconductor material with high purity. The polycrystalline silicon is prepared by pulling high-purity polycrystalline silicon in a single crystal furnace, wherein the single crystal silicon is an active nonmetal element, is an important component of a crystal material and is in the front of the development of a new material. The material is mainly used as a semiconductor material and utilizes solar photovoltaic power generation, heat supply and the like. Since solar energy has the advantages of cleanness, environmental protection, convenience and the like, in recent thirty years, solar energy utilization technology has been developed greatly in the aspects of research and development, commercial production and market development, and becomes one of the emerging industries of rapid and stable development in the world.
In the prior art, a monocrystalline silicon wafer is generally cut into monocrystalline silicon wafers with single specifications in a monocrystalline silicon wafer production process, then subsequent processing is carried out, when monocrystalline silicon wafers with different specifications are produced, a plurality of cutting sizes are required to be adjusted, production steps are increased, production efficiency is affected, and the use is inconvenient.
Disclosure of Invention
Technical problem to be solved
Aiming at the defects of the prior art, the invention provides a production process of a monocrystalline silicon piece, which solves the problems of more production steps, lower production efficiency and inconvenient use in the production process of the monocrystalline silicon piece.
(II) technical scheme
In order to achieve the purpose, the invention is realized by the following technical scheme: a production process of a monocrystalline silicon wafer comprises the following steps:
s1, cutting: under the action of cooling liquid, cutting the monocrystalline silicon wafer into monocrystalline silicon wafers with different size requirements by using a multi-wire cutting device;
s2, grinding: under the action of the grinding liquid, grinding the upper surface and the lower surface of the monocrystalline silicon wafer in the step S1 by using a double-sided grinding device to ensure that the surface roughness of the monocrystalline silicon wafer meets the process requirement;
s3, chamfering: chamfering processing is carried out on the monocrystalline silicon wafer in the step S2 by using a chamfering device, so that chamfering parameters meet the technological requirements;
s4, cleaning and drying: cleaning the monocrystalline silicon wafer in the step S3 by using a full-automatic ultrasonic cleaning device, and then drying the monocrystalline silicon wafer by using drying equipment;
s5, sorting: classifying and screening the monocrystalline silicon wafer in the S4 according to different specifications by using a non-contact automatic silicon wafer sorting machine;
s6, quality detection: and (4) performing quality detection on the monocrystalline silicon wafers within the same specification, and removing defective products.
(III) advantageous effects
The invention provides a production process of a monocrystalline silicon wafer. The method has the following beneficial effects:
compared with the prior art, the multi-wire cutting device is used for cutting the monocrystalline silicon wafers into the target monocrystalline silicon wafers according to different size requirements, and then the sorting step is added, so that the monocrystalline silicon wafers with different sizes can be sorted and screened out in a classified mode, the step of debugging the cutting size is not needed, the production steps are fewer, the production efficiency is improved, and the multi-wire cutting device is simpler and more convenient to use.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example (b):
the embodiment of the invention provides a production process of a monocrystalline silicon wafer, which comprises the following steps:
s1, cutting: under the action of cooling liquid, cutting the monocrystalline silicon wafer into 300mm and 450mm monocrystalline silicon wafers by using a multi-wire cutting device;
s2, grinding: under the action of the grinding liquid, grinding the upper surface and the lower surface of the monocrystalline silicon wafer in the step S1 by using a double-sided grinding device to ensure that the surface roughness of the monocrystalline silicon wafer meets the process requirement;
s3, chamfering: chamfering processing is carried out on the monocrystalline silicon wafer in the step S2 by using a chamfering device, so that chamfering parameters meet the technological requirements;
s4, cleaning and drying: cleaning the monocrystalline silicon wafer in the step S3 by using a full-automatic ultrasonic cleaning device, and then drying the monocrystalline silicon wafer by using drying equipment;
s5, sorting: classifying and screening the monocrystalline silicon wafer in the S4 according to the specifications of 300mm and 450mm by using a non-contact automatic silicon wafer sorting machine;
s6, quality detection: and (4) performing quality detection on the monocrystalline silicon wafers within the same specification, and removing defective products.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (1)
1. A production process of a monocrystalline silicon wafer is characterized in that; the method comprises the following steps:
s1, cutting: under the action of cooling liquid, cutting the monocrystalline silicon wafer into monocrystalline silicon wafers with different size requirements by using a multi-wire cutting device;
s2, grinding: under the action of the grinding liquid, grinding the upper surface and the lower surface of the monocrystalline silicon wafer in the step S1 by using a double-sided grinding device to ensure that the surface roughness of the monocrystalline silicon wafer meets the process requirement;
s3, chamfering: chamfering processing is carried out on the monocrystalline silicon wafer in the step S2 by using a chamfering device, so that chamfering parameters meet the technological requirements;
s4, cleaning and drying: cleaning the monocrystalline silicon wafer in the step S3 by using a full-automatic ultrasonic cleaning device, and then drying the monocrystalline silicon wafer by using drying equipment;
s5, sorting: classifying and screening the monocrystalline silicon wafer in the S4 according to different specifications by using a non-contact automatic silicon wafer sorting machine;
s6, quality detection: and (4) performing quality detection on the monocrystalline silicon wafers within the same specification, and removing defective products.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210808423.0A CN115070973A (en) | 2022-07-11 | 2022-07-11 | Production process of monocrystalline silicon wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210808423.0A CN115070973A (en) | 2022-07-11 | 2022-07-11 | Production process of monocrystalline silicon wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115070973A true CN115070973A (en) | 2022-09-20 |
Family
ID=83260482
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210808423.0A Pending CN115070973A (en) | 2022-07-11 | 2022-07-11 | Production process of monocrystalline silicon wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115070973A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030131783A1 (en) * | 2002-01-11 | 2003-07-17 | Arvidson Arvid Neil | Method of stacking polycrystalline silicon in process for single crystal production |
| CN102837370A (en) * | 2012-07-31 | 2012-12-26 | 昆明冶研新材料股份有限公司 | Special cutting apparatus for manufacturing silicon core of chemical vapor deposition growth polycrystalline silicon and machining method of silicon core |
| CN107068816A (en) * | 2017-04-17 | 2017-08-18 | 安徽路明光电科技有限公司 | A kind of manufacture craft of LED silicon wafer circuitry plate |
| CN108054111A (en) * | 2017-12-19 | 2018-05-18 | 大连鑫鑫创世科技发展有限公司 | A kind of dividing method of integrated circuit silicon chip |
| CN108644099A (en) * | 2018-06-12 | 2018-10-12 | 山东大海新能源发展有限公司 | The control method and device of water pump in silicon chip production technology |
| CN108972919A (en) * | 2017-06-01 | 2018-12-11 | 江苏拓正茂源新能源有限公司 | The technique that silicon single crystal rod is processed into monocrystalline silicon buffing silicon wafer |
| CN112776195A (en) * | 2019-11-01 | 2021-05-11 | 苏州阿特斯阳光电力科技有限公司 | Silicon wafer processing method, grooving main roller and slicing equipment |
-
2022
- 2022-07-11 CN CN202210808423.0A patent/CN115070973A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030131783A1 (en) * | 2002-01-11 | 2003-07-17 | Arvidson Arvid Neil | Method of stacking polycrystalline silicon in process for single crystal production |
| CN102837370A (en) * | 2012-07-31 | 2012-12-26 | 昆明冶研新材料股份有限公司 | Special cutting apparatus for manufacturing silicon core of chemical vapor deposition growth polycrystalline silicon and machining method of silicon core |
| CN107068816A (en) * | 2017-04-17 | 2017-08-18 | 安徽路明光电科技有限公司 | A kind of manufacture craft of LED silicon wafer circuitry plate |
| CN108972919A (en) * | 2017-06-01 | 2018-12-11 | 江苏拓正茂源新能源有限公司 | The technique that silicon single crystal rod is processed into monocrystalline silicon buffing silicon wafer |
| CN108054111A (en) * | 2017-12-19 | 2018-05-18 | 大连鑫鑫创世科技发展有限公司 | A kind of dividing method of integrated circuit silicon chip |
| CN108644099A (en) * | 2018-06-12 | 2018-10-12 | 山东大海新能源发展有限公司 | The control method and device of water pump in silicon chip production technology |
| CN112776195A (en) * | 2019-11-01 | 2021-05-11 | 苏州阿特斯阳光电力科技有限公司 | Silicon wafer processing method, grooving main roller and slicing equipment |
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