CN115066759A - 发光器件、电子装置、控制装置及发光控制方法 - Google Patents

发光器件、电子装置、控制装置及发光控制方法 Download PDF

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Publication number
CN115066759A
CN115066759A CN202080036466.0A CN202080036466A CN115066759A CN 115066759 A CN115066759 A CN 115066759A CN 202080036466 A CN202080036466 A CN 202080036466A CN 115066759 A CN115066759 A CN 115066759A
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China
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nano
layer
electrode layer
emitting device
antenna
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CN202080036466.0A
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刘永俊
杨亮
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Huawei Technologies Co Ltd
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Huawei Technologies Co Ltd
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Publication of CN115066759A publication Critical patent/CN115066759A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80522—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
    • H05B45/60—Circuit arrangements for operating LEDs comprising organic material, e.g. for operating organic light-emitting diodes [OLED] or polymer light-emitting diodes [PLED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/868—Arrangements for polarized light emission

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

本申请实施例提供一种发光器件、电子装置、控制装置及发光控制方法，涉及显示技术领域，可以改善发光器件发光效率低的问题。该发光器件包括依次设置的第一电极层、电致发光层和纳米天线层；其中，所述第一电极层用于使能所述电致发光层产生光子；所述纳米天线层用于在所述电致发光层产生的光子出射至所述纳米天线层靠近所述电致发光层的表面时，在所述表面产生表面等离激元。

Description

PCT国内申请，说明书已公开。

Claims (28)

  1. PCT国内申请，权利要求书已公开。
CN202080036466.0A 2020-12-31 2020-12-31 发光器件、电子装置、控制装置及发光控制方法 Pending CN115066759A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2020/142492 WO2022141565A1 (zh) 2020-12-31 2020-12-31 发光器件、电子装置、控制装置及发光控制方法

Publications (1)

Publication Number Publication Date
CN115066759A true CN115066759A (zh) 2022-09-16

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US (1) US20230363199A1 (zh)
EP (1) EP4261903A4 (zh)
CN (1) CN115066759A (zh)
WO (1) WO2022141565A1 (zh)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101295767A (zh) * 2007-04-27 2008-10-29 北京大学 一种提高有机电致发光器件出光效率的方法及相应的器件
KR101274591B1 (ko) * 2009-12-18 2013-06-13 엘지디스플레이 주식회사 표면 플라즈몬을 이용한 컬러필터와 액정표시장치 및 그 제조방법
JP5821038B2 (ja) * 2011-03-23 2015-11-24 パナソニックＩｐマネジメント株式会社 有機エレクトロルミネッセンス素子
CN102394263A (zh) * 2011-11-22 2012-03-28 中国科学院半导体研究所 增强n-ZnO/AlN/p-GaN发光二极管的电致发光性能的方法
WO2016084727A1 (ja) * 2014-11-27 2016-06-02 シャープ株式会社 発光素子、表示パネル、表示装置、電子機器、発光素子の製造方法
CN109671826B (zh) * 2017-10-17 2021-01-12 京东方科技集团股份有限公司 发光二极管及其制作方法以及显示装置
CN109166982A (zh) * 2018-08-31 2019-01-08 京东方科技集团股份有限公司 一种有机电致发光器件、显示面板及显示装置
US11139442B2 (en) * 2019-03-12 2021-10-05 Universal Display Corporation Nanopatch antenna outcoupling structure for use in OLEDs
CN111769182B (zh) * 2020-07-10 2022-03-15 中国科学院半导体研究所 表面等离激元GaN基LED外延结构及其制备方法和应用

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EP4261903A4 (en) 2024-04-03
WO2022141565A1 (zh) 2022-07-07
US20230363199A1 (en) 2023-11-09
EP4261903A1 (en) 2023-10-18

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