CN115064510A - Semiconductor circuit module and preparation method thereof - Google Patents
Semiconductor circuit module and preparation method thereof Download PDFInfo
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- CN115064510A CN115064510A CN202210726769.6A CN202210726769A CN115064510A CN 115064510 A CN115064510 A CN 115064510A CN 202210726769 A CN202210726769 A CN 202210726769A CN 115064510 A CN115064510 A CN 115064510A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention discloses a semiconductor circuit module and a preparation method thereof, wherein the semiconductor circuit module comprises: a glass fiber board; the totem poles are made of metal and are arranged at intervals, the first end of each totem pole penetrates through the glass fiber plate through the first thread structure on the outer wall of the totem pole, and the second end of each totem pole is provided with the second thread structure; a plurality of insulating layers; a plurality of copper foil layers; the power components are respectively arranged on the copper foil layers; the patch components are arranged on the glass fiber board at intervals; a plurality of pins; a package body; the second ends of the plurality of totem poles penetrate through the radiator. The semiconductor circuit module of the invention not only avoids the condition that the heat of the high-heat power component is radiated to other components, but also avoids the condition that the outside of the semiconductor circuit is broken, and simultaneously, the installation efficiency is improved and the installation cost is reduced.
Description
Technical Field
The present invention relates to the field of semiconductor circuit technology, and in particular, to a semiconductor circuit module and a method for manufacturing the same.
Background
The semiconductor circuit is a modular intelligent Power system mips (modular intelligent Power system), which not only integrates a Power switch device and a driving circuit, but also embeds fault detection circuits such as overvoltage, overcurrent and overheat, and can send detection signals to a CPU or a DSP for interrupt processing. The high-speed low-power-consumption chip mainly comprises a high-speed low-power-consumption chip, an optimized gate-level driving circuit, a quick protection circuit and the like, and even if a load accident or improper use occurs, the chip can not be damaged.
In order to improve the heat dissipation effect, a heat radiator is generally attached to the side face of a substrate of an existing semiconductor circuit, so that heat dissipated by components is timely conducted out to the heat radiator for heat dissipation, and the situation that the circuit is damaged due to overhigh internal heat of the semiconductor circuit is avoided. But the base plate among the current semiconductor circuit all adopts the metal substrate preparation that the heat conductivity is high, this condition that can radiate the heat to other components and parts when having led to the high heat components and parts of semiconductor circuit to pass through base plate heat conduction, the reliability of product has been reduced, simultaneously, still need set up the locating hole in both limit portion positions in addition when current semiconductor circuit and radiator installation, then twist to move through the screw and assemble fixedly, this has not only reduced the installation effectiveness, and the installation cost is improved, still can cause the phenomenon that the semiconductor circuit outside collapses badly.
Disclosure of Invention
The invention aims to provide a semiconductor circuit module, which aims to solve the problems that when a high-heat component in the conventional semiconductor circuit conducts heat through a substrate, the heat can be radiated to other components, and when the high-heat component is installed with a radiator, the installation efficiency is low, the installation cost is high, and the external part of the semiconductor circuit is cracked.
In order to solve the above problem, the present invention provides, in a first aspect, a semiconductor circuit module including:
the two opposite side surfaces of the glass fiber board are respectively a mounting surface and a heat dissipation surface;
the totem poles are made of metal and are arranged at intervals, the first end of each totem pole penetrates through the glass fiber plate through the first thread structure on the outer wall of the totem pole, and the second end of each totem pole is provided with the second thread structure;
the insulating layers are respectively arranged on the end surfaces of the first ends of the totem-pole bodies;
the copper foil layers are respectively arranged on the insulating layers;
the power components are respectively arranged on the copper foil layers; the number of the power components, the number of the copper foil layers, the number of the insulating layers and the number of the totem poles are the same;
the patch components are arranged on the glass fiber board at intervals; the power components, the patch components and the power components are electrically connected with each other;
the first ends of the pins are arranged on the glass fiber board at intervals and are respectively and electrically connected with the power component and the patch component;
the packaging body covers the glass fiber board, the plurality of power components and the plurality of patch components, and second ends of the pins penetrate through the packaging body and are exposed outwards;
and the second ends of the totem poles penetrate through the radiator and enable the radiator to be attached to the radiating surface.
Preferably, the semiconductor circuit module further includes a protection layer disposed between the corresponding power component and the copper foil layer, and a side surface of the protection layer, which is far away from the copper foil layer, is flush with the mounting surface.
Preferably, the insulation layer, the copper foil layer and the outer wall of the green oil layer which are sequentially arranged at the second end of the totem pole form the second thread structure.
Preferably, the second end of the totem-pole has a portion passing through the heat sink.
Preferably, the second end of the totem-pole penetrates through the heat sink and is locked by a nut.
Preferably, the power components, the patch components and the pins are electrically connected with the power components and the patch components through binding metal wires, and the pins are also electrically connected with the power components and the patch components through the binding metal wires.
Preferably, at least one of the components is disposed on the copper foil layer through a heat sink.
In a second aspect, the present invention provides a method of manufacturing a semiconductor circuit module as described above, comprising the steps of:
sequentially preparing the insulating layer and the copper foil layer at the second end of each totem pole;
preparing through holes for the two ends of the totem poles to respectively penetrate through at a plurality of corresponding positions of the glass fiber plate and the radiator;
then respectively penetrating a plurality of totem poles through a plurality of corresponding through holes on the glass fiber board and the radiator so as to enable the radiator to be attached to the heat dissipation surface of the glass fiber board;
and finally, after the power components, the patch components and the pins are arranged at the corresponding positions, the packaging body is prepared, and then the semiconductor circuit module can be prepared.
Preferably, after the step of sequentially preparing the insulating layer and the copper foil layer at the second end of each totem pole, the method further comprises the steps of: and preparing a first thread structure on the outer walls of the insulating layer and the copper foil layer.
Preferably, the inner walls of the corresponding plurality of through holes on the glass fiber plate and the heat radiator are respectively provided with an internal thread structure which is matched with the first thread structures and the second thread structures on the plurality of totem poles.
Compared with the prior art, the invention takes the glass fiber board as the substrate of the semiconductor circuit module, and respectively penetrates the totem poles into the glass fiber board, then the insulating layer and the copper foil layer are sequentially arranged on the end surface of the first end of each totem pole, and finally the power component is arranged on the copper foil layer on the totem pole, so that the heat of the power component can be led out one by one through the totem poles, and the heat isolation can be carried out through the glass fiber board, thereby avoiding the condition that the heat of the high-heat power component is radiated to other components, so as to improve the reliability of the product, meanwhile, the glass fiber board and the radiator are fixedly connected through the first thread structure and the second thread structure on the totem pole, thereby not only needing to open holes on the edge part of the semiconductor circuit, avoiding the condition that the semiconductor circuit is externally broken, but also needing not to add screws for fixation, and improving the installation efficiency, the installation cost is reduced.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a schematic cross-sectional view of a semiconductor circuit in a semiconductor circuit module according to an embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of a semiconductor circuit module according to an embodiment of the present invention;
FIG. 3 is a schematic plan view of a semiconductor circuit in a semiconductor circuit module according to an embodiment of the present invention;
FIG. 4 is a schematic cross-sectional view of a semiconductor circuit in a semiconductor circuit module according to the prior art;
FIG. 5 is a schematic cross-sectional view of a semiconductor circuit module according to the prior art;
FIG. 6 is a schematic plan view of a semiconductor circuit in a semiconductor circuit module according to the prior art;
fig. 7 is a flowchart illustrating a method for manufacturing a semiconductor circuit module according to an embodiment of the invention.
Wherein, 1, glass fiber board; 2. a totem pole; 21. a first thread formation; 22. a second thread formation; 3. an insulating layer; 4. a copper foil layer; 5. a power component; 51. semi-finished products of components; 52. a heat sink; 6. mounting a component; 7. a pin; 8. a package body; 9. a heat sink; 10. a protective layer; 11. and binding the metal wire.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example one
An embodiment of the present invention provides a semiconductor circuit module, which is shown in fig. 1 to 3 and includes a glass fiber board 1, a plurality of totem poles 2, a plurality of insulating layers 3, a plurality of copper foil layers 4, a plurality of power components 5, a plurality of patch components 6, a plurality of pins 7, a package 8, and a heat sink 9.
Specifically, two opposite side surfaces of the glass fiber plate 1 are a mounting surface and a heat dissipation surface respectively; the plurality of totem poles 2 are made of metal and are arranged at intervals, the first end of each totem pole 2 penetrates through the glass fiber plate 1 through the first thread structure 21 on the outer wall of the totem pole, and the second end of each totem pole 2 is provided with the second thread structure 22; the insulating layers 3 are respectively arranged on the end surfaces of the first ends of the totem poles 2; the plurality of copper foil layers 4 are respectively arranged on the plurality of insulating layers 3; the plurality of power components 5 are respectively arranged on the plurality of copper foil layers 4; the plurality of chip components 6 are arranged on the glass fiber plate 1 at intervals; the first ends of the pins 7 are arranged on the glass fiber board 1 at intervals and are respectively and electrically connected with the power components 5 and the patch components 6; the packaging body 8 covers the glass fiber board 1, the power components 5 and the patch components 6, and second ends of the pins 7 penetrate through the packaging body 8 and are exposed outwards; the second ends of the totem poles 2 penetrate through the radiator 9 and enable the radiator 9 to be attached to the radiating surface.
The semiconductor circuit is an integral structure without the heat sink 9, and the semiconductor circuit module is a combination of the semiconductor circuit and the heat sink 9.
Specifically, the number of the power components 5, the copper foil layer 4, the insulating layer 3 and the totem poles 2 is the same; the plurality of power components 5, the plurality of chip components 6, and the power components 5 and the chip components 6 are electrically connected to each other.
The glass fiber board 1 is also called a glass fiber board, and is used for carrying a low-voltage control device (a chip component 6) and a circuit of the whole semiconductor circuit.
The totem pole 2 serves as a carrier of a high-voltage power device (power component 5) and plays a role in heat conduction (heat dissipation) for the power component 5. The first thread structure 21 is used for connecting with the glass fiber board 1, and the second thread structure 22 is used for connecting with the heat sink 9, so as to realize the installation and the fitting of the heat sink 9 and the glass fiber board 1.
The insulating layer 3 is used to prevent the conduction of electricity between the copper foil layer 4 and the totem pole 2, so as to avoid the risk of short circuit and electric leakage of the semiconductor circuit.
The copper foil layer 4 is etched to form a desired circuit to make a circuit wiring layer, and also serves as a bonding medium (pad) for surface mounting the power component 5 and electrically connecting the circuit.
In this embodiment, the plurality of power components 5 include chips necessary for forming an internal power supply circuit of the semiconductor circuit and a component semi-finished product 51 mounted on the copper foil layer 4 via a heat sink 52 attached thereto. Of course, according to actual requirements, the semiconductor device further includes other high-voltage power components 5 necessary for the semiconductor circuit, or other high-voltage power components 5 added according to different requirements, and the like.
The heat sink 52 is made of a copper material, and the surface of the heat sink 52 is plated with silver, so that the components and the heat sink 52 can be better attached to each other, and the heat dissipation capability is improved.
In this embodiment, the plurality of chip components 6 include chip resistors and chip capacitors; the chip resistor is connected to the grid of a chip (IGBT chip) in the semiconductor circuit, and the switching speed of the chip is limited by current limiting; the patch capacitor plays the roles of filtering, coupling and bootstrap in the semiconductor circuit. Of course, according to actual requirements, the low-voltage control circuit also comprises other low-voltage control components necessary for the semiconductor circuit, or other low-voltage control components added according to different requirements, and the like.
In this embodiment, the pin 7 is C194(-1/2H), and has the following chemical components: cu ≧ 97.0%, Fe: 2.4%, P: 0.03%, Zn: 0.12 percent; or KFC (-1/2H), chemical composition: cu ≧ 99.6%, Fe: 0.1% (0.05% -0.15%, P: 0.03% (0.025% -0.04%). 0.5mm copper plate is punched by machining to form a desired shape, and then the surface is plated with nickel of 0.1-0.5 um thickness and then tin of 2-5 um thickness.
In this embodiment, the package 8 is made by mixing an epoxy resin as a matrix resin, a high-performance phenolic resin as a curing agent, silica powder and the like as fillers, and adding a plurality of auxiliaries, and is a powdery molding compound; and extruding the glass fiber board 1, the power components 5 and the patch components 6 into a die cavity by a heat transfer molding method, covering the glass fiber board, the power components and the patch components, and simultaneously performing cross-linking curing molding to form a structural body with a certain shape structure.
The heat sink 9 serves to quickly dissipate heat from the entire semiconductor circuit.
In this embodiment, the hole body for the totem pole 2 to penetrate through on the glass fiber plate 1 penetrates through the glass fiber plate 1, and the hole body for the totem pole 2 to penetrate through on the heat sink 9 may or may not penetrate through the heat sink 9, so that the totem pole 2 connects the glass fiber plate 1 and the heat sink 9.
In this embodiment, the semiconductor circuit module further includes a protection layer 10 disposed between the corresponding power component 5 and the copper foil layer 4, and a side surface of the protection layer 10 away from the copper foil layer 4 is flush with the mounting surface.
The protective layer 10 is also called a green oil layer, and is used for preventing tin from being applied to places where tin is not applied, increasing the withstand voltage between circuits, preventing short circuit caused by oxidation or pollution of the circuits, and well protecting the circuits.
In this embodiment, the plurality of totem poles 2, the plurality of insulating layers 3, the plurality of copper foil layers 4, the plurality of protective layers 10, and the plurality of power components 5 are the same in number and are arranged in a one-to-one correspondence.
In this embodiment, the outer walls of the insulating layer 3, the copper foil layer 4 and the green oil layer, which are sequentially arranged at the second end of the totem pole 2, form the second thread structure 22 thereof, that is, the second thread structure 22 is prepared on the outer walls of the insulating layer 3, the copper foil layer 4 and the green oil layer, so that the insulating layer 3, the copper foil layer 4, the green oil layer and the totem pole 2 can be regarded as an integrated structure prepared in advance.
As a first form of connection between the totem pole 2 and the heat sink 9, the hole body for the totem pole 2 to penetrate through on the heat sink 9 does not penetrate through the heat sink 9, at this time, the second end of the totem pole 2 penetrates from the glass fiber plate 1 until reaching the heat sink 9, and the second end of the totem pole 2 does not penetrate through the heat sink 9.
As a second form of connection between the totem pole 2 and the heat sink 9, a hole body through which the totem pole 2 is inserted on the heat sink 9 penetrates through the heat sink 9, at this time, the totem pole 2 can be inserted through the hole body on the glass fiber plate 1 or the heat sink 9, the second end portion of the totem pole 2 penetrates through the heat sink 9, and of course, at least a part of the second thread structure 22 on the totem pole 2 is connected with the hole body of the heat sink 9, so as to realize the fixing function of connection between the two.
As a third form of connection between the totem pole 2 and the heat sink 9, a hole body for the totem pole 2 to penetrate through on the heat sink 9 penetrates through the heat sink 9, at this time, the totem pole 2 can be inserted through the hole body on the glass fiber plate 1 or the heat sink 9, the second end part of the totem pole 2 completely penetrates through the heat sink 9, and finally, the second thread structure 22 at the second end of the totem pole 2 is locked by a nut, so as to realize the fixing function of connection between the totem pole 2 and the heat sink 9.
In this embodiment, the power component 5, the patch component 6, the pins 7, and the package 8 are all prepared after the totem pole 2 is connected to the glass fiber board 1 and the heat sink 9.
In this embodiment, the plurality of power components 5, the plurality of patch components 6, and the power components 5 and the patch components 6 are electrically connected through the bonding metal wires 11, and the plurality of pins 7 are also electrically connected with the plurality of power components 5 and the plurality of patch components 6 respectively through the bonding metal wires 11.
The binding metal wire 11 is a metal wire such as gold, aluminum, copper, etc., and is used for electrically connecting the components.
Fig. 4 is a schematic cross-sectional view of a semiconductor circuit in the prior art, which shows that all components are thermally conductive through the same substrate and are not provided with a mounting structure connected to the heat sink 9; fig. 5 is a schematic cross-sectional view of a semiconductor circuit module of the prior art, in which it is apparent that the semiconductor circuit and the heat sink 9 are not connected by a mounting structure thereof; fig. 6 is a schematic plan view of a conventional semiconductor circuit module, in which a mounting hole for connecting a heat sink 9 is provided at an edge portion of a semiconductor circuit.
Compared with the prior art, in the embodiment, the glass fiber plate 1 is used as a substrate of a semiconductor circuit module, the plurality of totem poles 2 are respectively arranged in the glass fiber plate 1 in a penetrating manner, then the insulating layer 3 and the copper foil layer 4 are sequentially arranged on the end face of the first end of each totem pole 2, and finally the power component 5 is arranged on the copper foil layer 4 on the totem pole 2, so that heat of the power component 5 can be led out one by one through the totem poles 2, heat isolation can be carried out through the glass fiber plate 1, the condition that heat of the high-heat power component 5 is radiated to other components is avoided, the reliability of a product is improved, meanwhile, the glass fiber plate 1 and the radiator 9 are fixedly connected through the first thread structure 21 and the second thread structure 22 on the totem pole 2, therefore, holes do not need to be formed on the edge of the semiconductor circuit, and the condition that the outside of the semiconductor circuit is broken is avoided, and screws are not required to be additionally arranged for fixing, so that the mounting efficiency is improved, and the mounting cost and the complexity of a semiconductor circuit are reduced.
Example two
An embodiment of the present invention provides a method for manufacturing a semiconductor circuit module, as shown in fig. 7, including the following steps:
s1, sequentially preparing an insulating layer 3 and a copper foil layer 4 at the second end of each totem pole 2;
s2, preparing through holes for the two ends of the totem-pole 2 to respectively penetrate through at a plurality of corresponding positions of the glass fiber plate 1 and the radiator 9;
s3, respectively penetrating a plurality of totem-pole units 2 into a plurality of corresponding through holes on the glass fiber board 1 and the heat radiator 9, so that the heat radiator 9 is attached to the heat radiating surface of the glass fiber board 1;
and S4, finally, after the plurality of power components 5, the plurality of patch components 6 and the plurality of pins 7 are installed to corresponding positions, preparing the packaging body 8, and thus completing the preparation of the semiconductor circuit module.
The semiconductor circuit module in this embodiment is the semiconductor circuit module in the first embodiment, and is not specifically described here.
In this embodiment, the specific steps of step S1 are as follows: firstly, pressing a corresponding insulating layer 3, a copper foil layer 4 and a protective layer 10 in a pressing mode to form a pressing semi-finished product; and then pressing the semi-finished product to the second end of the totem pole 2, and processing thread structures on the first end of the totem pole 2 and the semi-finished product to form a first thread structure 21 and a second thread structure 22 at two ends of the totem pole 2.
In this embodiment, in step S2: when a perforation is prepared on the glass fiber plate 1, the perforation penetrates through the glass fiber plate 1, and an internal thread structure matched with the first thread structure 21 is prepared on the inner wall of the perforation; when the through holes are formed in the heat sink 9, the through holes may penetrate through the heat sink 9 or may not penetrate through the heat sink 9 according to different requirements.
In this embodiment, in step S3, the totem-pole 2 is inserted into the corresponding through holes on the glass fiber board 1 and the heat sink 9 in three ways: the first is that the through hole on the radiator 9 does not penetrate through the radiator 9, at this time, the totem-pole 2 penetrates into the through hole of the radiator 9 through the through hole on the glass fiber plate 1; the second is that the through hole of the radiator 9 penetrates through the radiator 9 and the inner wall is prepared with an internal thread structure, at this time, the totem-pole 2 can be arranged to the through hole of the other part from the through hole on the glass fiber plate 1 or the radiator 9; the third is that the through hole of the heat sink 9 penetrates through the heat sink 9 and the inner wall is not provided with an internal thread structure, at this time, the totem-pole 2 can be arranged from the through hole on the glass fiber board 1 or the heat sink 9 to the through hole of the other part, and the second thread structure 22 at the second end of the totem-pole 2 can be locked by a nut, so that the heat sink 9 is attached to the heat dissipation surface of the glass fiber board 1.
In this embodiment, in step S4: the installation mode of the plurality of power components 5 is that the power components 5 are respectively pasted on the installation positions of the copper foil layer 4 through automatic crystal adhering equipment (DA machine) in a mode of brushing tin paste or dispensing silver glue on the installation positions reserved on the copper foil layer 4; the power component 5 with the heat radiating fins 52 is characterized in that the power component 5(PFC circuit) is mounted on the heat radiating fins 52 with the silver-plated surfaces through a soft solder die bonder to form a component semi-finished product 51, and the plurality of chip components 6 and the component semi-finished product 51 are mounted in a mode that the chip components 6 and the component semi-finished product 51 are mounted on a specified mounting position through automatic chip SMT (surface mount technology) equipment; the pins 7 are installed in a manner that the pins 7 are placed at corresponding welding positions by a manipulator or a worker; and then, the mounted integral structure is processed through a reflow oven together to weld all the components to the corresponding mounting positions.
In this embodiment, after the semiconductor circuit module is manufactured, the welding quality of each component (the power component 5 and the chip component 6) is detected by a visual inspection AOI (automatic optical inspection) device, and the residual soldering flux, aluminum chips and other foreign matters are removed by cleaning methods such as spraying and ultrasonic cleaning; then welding the metal binding wire to electrically connect each component and the circuit wiring; and finally, plastically packaging the whole structure in a specific mould through packaging equipment, marking the product through laser marking, performing post-curing stress-relief treatment on the product through a high-temperature oven, cutting off and trimming the connecting ribs and the false pins 7 of the pins 7 into required shapes through rib cutting forming equipment, and then testing electrical parameters to form a final qualified product.
Compared with the prior art, in the embodiment, the power component 5 with high power heating is attached to the totem pole 2 of the metal structure of the component, the patch component 6 with low-voltage driving control is attached to the glass fiber board 1, the installation position of the power component 5 with high power heating is reserved at the specific position of the glass fiber board 1 which is full of lines, and the totem pole 2 with the metal structure is inserted into the glass fiber board 1, so that the layout of the power component 5 on the glass fiber board 1 is realized, meanwhile, through the thread structures at the two ends of the totem pole 2 and the multilayer laminating process, various functions of supporting, radiating, insulating, accurately positioning, fixing a radiator 9 and the like can be realized in the semiconductor circuit, and in addition, the semiconductor circuit module in the embodiment is also the semiconductor circuit module in the first embodiment, therefore, the semiconductor circuit module prepared by the preparation method of the semiconductor circuit module in the embodiment also has the functions of the semiconductor circuit module in the first embodiment The technical effects of (1) are not described herein.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications of equivalent structures and equivalent processes, which are made by using the contents of the present specification and the accompanying drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (10)
1. A semiconductor circuit module, comprising:
the glass fiber board, two opposite side surfaces of the glass fiber board are respectively a mounting surface and a heat dissipation surface;
the totem poles are made of metal and are arranged at intervals, the first end of each totem pole penetrates through the glass fiber plate through the first thread structure on the outer wall of the totem pole, and the second end of each totem pole is provided with the second thread structure;
the insulating layers are respectively arranged on the end surfaces of the first ends of the totem-pole bodies;
the copper foil layers are respectively arranged on the insulating layers;
the power components are respectively arranged on the copper foil layers; the number of the power components, the number of the copper foil layers, the number of the insulating layers and the number of the totem poles are the same;
the patch components are arranged on the glass fiber board at intervals; the power components, the patch components and the power components are electrically connected with each other;
the first ends of the pins are arranged on the glass fiber board at intervals and are respectively and electrically connected with the power components and the patch components;
the packaging body covers the glass fiber board, the plurality of power components and the plurality of patch components, and second ends of the pins penetrate through the packaging body and are exposed outwards;
and the second ends of the totem poles penetrate through the radiator and enable the radiator to be attached to the radiating surface.
2. The semiconductor circuit module of claim 1, further comprising a protective layer disposed between the corresponding power component and the copper foil layer, wherein a side of the protective layer remote from the copper foil layer is flush with the mounting surface.
3. The semiconductor circuit module of claim 2, wherein the insulating layer, the copper foil layer and the outer wall of the green oil layer disposed in sequence at the second end of the totem pole form the second thread structure thereof.
4. The semiconductor circuit module of claim 1, wherein the second end of the totem-pole has a portion passing through the heat sink.
5. The semiconductor circuit module of claim 1, wherein the second end of the totem-pole passes through the heat sink and is locked by a nut.
6. The semiconductor circuit module according to claim 1, wherein a plurality of the power components, a plurality of the chip components, and the power component and the chip component are electrically connected by bonding wires, and a plurality of the pins are also electrically connected to the plurality of the power components and the plurality of the chip components respectively by the bonding wires.
7. The semiconductor circuit module of claim 1, wherein at least one of said components is disposed on said copper foil layer through a heat sink.
8. A method for manufacturing a semiconductor circuit module according to any one of claims 1 to 7, comprising the steps of:
sequentially preparing the insulating layer and the copper foil layer at the second end of each totem pole;
preparing through holes for the two ends of the totem poles to respectively penetrate through at a plurality of corresponding positions of the glass fiber plate and the radiator;
then respectively penetrating a plurality of totem poles through a plurality of corresponding through holes on the glass fiber board and the radiator so as to enable the radiator to be attached to the heat dissipation surface of the glass fiber board;
and finally, after the power components, the patch components and the pins are arranged at the corresponding positions, the packaging body is prepared, and then the semiconductor circuit module can be prepared.
9. The method of manufacturing a semiconductor circuit module according to claim 8, wherein the step of sequentially manufacturing the insulating layer and the copper foil layer at the second end of each of the totem-pole further comprises, after the step of sequentially manufacturing the insulating layer and the copper foil layer: and preparing a first thread structure on the outer walls of the insulating layer and the copper foil layer.
10. The method of manufacturing a semiconductor circuit module according to claim 8, wherein inner walls of the corresponding plurality of through holes of the glass fiber plate and the heat sink are each prepared with an internal thread structure that respectively matches the first thread structure and the second thread structure on the plurality of totem poles.
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| CN202210726769.6A CN115064510B (en) | 2022-06-24 | 2022-06-24 | Semiconductor circuit module and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118016630A (en) * | 2024-04-09 | 2024-05-10 | 广东汇芯半导体有限公司 | Integrated semiconductor circuit |
| CN118016630B (en) * | 2024-04-09 | 2024-07-30 | 广东汇芯半导体有限公司 | Integrated semiconductor circuit |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160027709A1 (en) * | 2013-04-24 | 2016-01-28 | Fuji Electric Co., Ltd. | Power semiconductor module, method for manufacturing the same, and power converter |
| US20200357717A1 (en) * | 2019-05-07 | 2020-11-12 | Zf Friedrichshafen Ag | Power module having packaged power semiconductors for the controllable supply of electric power to a load |
-
2022
- 2022-06-24 CN CN202210726769.6A patent/CN115064510B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160027709A1 (en) * | 2013-04-24 | 2016-01-28 | Fuji Electric Co., Ltd. | Power semiconductor module, method for manufacturing the same, and power converter |
| US20200357717A1 (en) * | 2019-05-07 | 2020-11-12 | Zf Friedrichshafen Ag | Power module having packaged power semiconductors for the controllable supply of electric power to a load |
Non-Patent Citations (1)
| Title |
|---|
| 肖龙;贺强民;李涛;徐伟玲;刘涛;: "金属芯印制板在相机电路中的散热应用", 航天返回与遥感, no. 06, 15 December 2016 (2016-12-15), pages 70 - 79 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118016630A (en) * | 2024-04-09 | 2024-05-10 | 广东汇芯半导体有限公司 | Integrated semiconductor circuit |
| CN118016630B (en) * | 2024-04-09 | 2024-07-30 | 广东汇芯半导体有限公司 | Integrated semiconductor circuit |
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| CN115064510B (en) | 2024-07-05 |
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