CN115060374A - Infrared thermopile sensor capable of improving absorption efficiency and MEMS process manufacturing method thereof - Google Patents
Infrared thermopile sensor capable of improving absorption efficiency and MEMS process manufacturing method thereof Download PDFInfo
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- CN115060374A CN115060374A CN202210658197.2A CN202210658197A CN115060374A CN 115060374 A CN115060374 A CN 115060374A CN 202210658197 A CN202210658197 A CN 202210658197A CN 115060374 A CN115060374 A CN 115060374A
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- 238000010521 absorption reaction Methods 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 50
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 50
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 21
- 239000010703 silicon Substances 0.000 claims abstract description 21
- 230000005855 radiation Effects 0.000 claims abstract description 18
- 238000005260 corrosion Methods 0.000 claims abstract description 13
- 230000007797 corrosion Effects 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 239000010408 film Substances 0.000 claims description 19
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 4
- 238000007736 thin film deposition technique Methods 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 5
- 239000007788 liquid Substances 0.000 abstract description 3
- 239000007787 solid Substances 0.000 description 7
- 230000035945 sensitivity Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 4
- 230000005678 Seebeck effect Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/0015—Cantilevers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0205—Mechanical elements; Supports for optical elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
Abstract
The invention relates to an infrared thermopile sensor for improving absorption efficiency and an MEMS process manufacturing method thereof, belonging to the field of infrared thermopile sensor manufacturing; compared with the traditional infrared thermopile sensor, the infrared thermopile sensor is added with the substrate, the hollow area and the silicon nitride absorption area, and the thermal resistance of the sensor is only influenced by the cantilever beam, so that the change of an output signal of the sensor caused by the thermal resistance change cannot be influenced by the increased silicon nitride absorption area part due to the thermal resistance change compared with the traditional thermopile. Meanwhile, the silicon nitride absorption area can absorb extra energy to the infrared radiation of the object to be measured, the thicker the silicon nitride absorption area is, the more the absorbed infrared radiation is, the more heat is converted, and the output signal of the thermopile is enhanced; meanwhile, the silicon nitride absorption area is formed, an MEMS manufacturing process is utilized, and according to anisotropic corrosion characteristics of silicon, the silicon nitride is not easy to be corroded by silicon corrosion liquid, so that a silicon corrosion self-termination technology is formed, and the silicon nitride area is reserved.
Description
Technical Field
The invention relates to an infrared thermopile sensor for improving absorption efficiency and an MEMS (micro-electromechanical systems) process manufacturing method thereof, belonging to the field of infrared thermopile sensor manufacturing.
Background
The infrared thermopile sensor is a sensor which converts infrared radiation energy into an electric signal and outputs the electric signal by utilizing the seebeck effect. Utilize MEMS technology, can make into the compatible single-point temperature acquisition chip of CMOS with infrared thermopile sensor and be applied to infrared thermometer, compare traditional mercury thermometer, infrared thermometer has safer, and the reading is directly perceived, and the time is short, advantages such as precision height have played the important effect in the aspect of the prevention and control. The combination of MEMS and CMOS technology is utilized, the infrared thermopile sensor can be manufactured into an infrared array sensor chip with a certain scale, all measured objects in a certain area are detected in a two-dimensional plane mode, respective temperature distribution states are shown, and the infrared thermopile sensor is widely applied to various intelligent household products, such as a microwave oven capable of automatically adjusting power, an automatic temperature control energy-saving refrigerator, an air conditioner with air moving along with people and the like, and has considerable market potential.
The structure of a conventional representative infrared stack sensor and its MEMS process, such as those shown in fig. 2-5 of patent US 8592765, can be applied to both single-point and infrared array sensors. The suspended film in the middle of the structure is used for absorbing infrared radiation, and the cantilever beams on two sides are used for heat insulation and mechanical support, so that absorbed infrared radiation heat is kept to the maximum extent and is not scattered and overflowed to the periphery, and the thermopile obtains higher electric signal conversion. However, since the size of the whole thermopile chip is usually limited to 50um to 1mm in terms of the manufacturing cost and the occupied area of the chip, the sensitivity of the whole thermopile chip is not too high due to the small area. And because the cantilever beam structure of the thermopile chip is solidified, the signal output can not be improved by structural change.
Disclosure of Invention
The purpose of the invention is as follows: the infrared thermopile sensor and the MEMS process manufacturing method thereof are provided for improving the absorption efficiency, and the problems that the size of the whole thermopile chip is usually limited within 50um to 1mm due to the consideration of the manufacturing cost of the chip and the occupied area of the chip, so that the sensitivity of the whole thermopile chip is not too high due to the influence of a small area are solved. And because the cantilever beam structure of the thermopile chip is solidified, the signal output can not be improved by structural change.
The technical scheme is as follows: in a first aspect the present invention provides an infrared thermopile sensor for improved absorption efficiency, comprising:
suspended films arranged in the middle of various areas, a first cantilever beam and a second cantilever beam,
a silicon nitride absorption area is arranged below the suspended film, the silicon nitride absorption area can perform extra energy absorption on infrared radiation of a measured object, the thicker the thickness, the more the absorbed infrared radiation is, the more heat is converted, and the output signal of the thermopile is enhanced;
the bottom of the silicon nitride absorption region is provided with a substrate, and a hollow region is arranged between the silicon nitride absorption region and the substrate.
Further, the silicon nitride absorption region adopts a MEMS manufacturing process.
The invention provides a method for manufacturing an infrared thermopile MEMS (micro electro mechanical System) process for improving absorption efficiency, which is characterized in that a chip can obtain more thermal signals under the same radiation condition by enhancing the infrared absorption ratio of a suspended film, so that the overall sensitivity of a sensor is improved, and the method specifically comprises the following steps:
step 1, coating photoresist on a silicon substrate in a crystal direction, and carrying out photoetching development to expose a filling area to be covered by silicon nitride;
step 2, performing silicon dry etching on the top of the crystal orientation by using an MEMS (micro electro mechanical system) process to form a pit, depositing silicon nitride by using a thin film deposition method, forming a silicon nitride region after performing partial region photoetching, and cleaning to remove the photoresist;
step 3, forming a thermopile sensor structure by using an MEMS process, wherein the thermopile sensor structure comprises a first cantilever beam, a second cantilever beam and a suspended film;
and 4, carrying out silicon corrosion by using tetramethyl ammonium hydroxide or potassium hydroxide, wherein the silicon nitride area is not easy to be corroded by the silicon corrosion solution, and forming a final structure.
Has the advantages that: the thermopile structure adopted by the invention comprises a suspended film, two cantilever beams, a substrate, a hollow area and a silicon nitride absorption area, wherein compared with the central suspended film of the traditional thermopile structure, the silicon nitride absorption area is additionally arranged below the thermopile structure. Meanwhile, the silicon nitride absorption area can absorb extra energy to the infrared radiation of the object to be measured, the thicker the silicon nitride absorption area is, the more the absorbed infrared radiation is, the more heat is converted, and the output signal of the thermopile is enhanced; meanwhile, the silicon nitride absorption area is formed, an MEMS manufacturing process is utilized, and according to anisotropic corrosion characteristics of silicon, the silicon nitride is not easy to be corroded by silicon corrosion liquid, so that a silicon corrosion self-termination technology is formed, and the silicon nitride area is reserved.
Drawings
Fig. 1 is a diagram of a thermopile structure in the prior art.
Fig. 2 is a schematic diagram of a thermopile in the prior art.
FIG. 3 is a cross-sectional view of a thermopile structure of the present invention.
FIG. 4 is a schematic diagram of a method for manufacturing a silicon nitride absorption region MEMS process according to the present invention.
FIG. 5 is a schematic diagram of a method for manufacturing a silicon nitride absorption region MEMS process according to the present invention.
FIG. 6 is a schematic diagram of a method for manufacturing a silicon nitride absorption region MEMS process according to the present invention.
Reference numerals: the structure comprises a thermopile structure 100, a suspended film 103, a first cantilever beam 101, a second cantilever beam 102, a substrate 300, a hollow area 301, a silicon nitride absorption area 302 and photoresist 400.
Detailed Description
In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art, that the present invention may be practiced without one or more of these details; in other instances, well-known features have not been described in order to avoid obscuring the invention.
Example 1:
in a first aspect, the present invention provides an infrared thermopile sensor for improved absorption efficiency, comprising: the thermopile structure 100 adopted by the present invention is similar to the structures related to other conventional patents, and as shown in fig. 1, both include a middle suspended thin film 103 and a first cantilever beam 102 and a second cantilever beam 103, wherein the suspended thin film 103 is used for absorbing infrared radiation of a measured object and converting the infrared radiation into heat energy, and the thermopiles on the first cantilever beam 102 and the second cantilever beam 103 convert the heat energy into an electrical signal by utilizing the seebeck effect. Meanwhile, the first cantilever beam 102 and the second cantilever beam 103 also play a role of heat insulation, so that most of heat is kept on the suspended film 103 and is not dissipated.
In particular, the thermal resistance R of the integral sensor TP As shown in fig. 2, it can be obtained by simple calculation that the suspended film 103 can be divided into an upper part and a lower part according to the heat flow direction of the central heat; from the solid heat exchange equation, the thermal resistance can be found as:
R＝L/(λ*A)
wherein L is the length of the solid, λ is the thermal conductivity of the solid, and a is the cross-sectional area through which the heat flow passes;
therefore, the thermal resistance of the sensor is formed by connecting the upper half cantilever beam 101 plus half of the suspended film 201 and the lower half cantilever beam 102 plus half of the suspended film 202 in parallel; the lengths of the first cantilever beam 102 and the second cantilever beam 103 are both L 1 All coefficients of thermal conductivity are lambda 1 The cross sectional areas are all A 1 (ii) a The length of the upper half suspended film and the lower half suspended film is L 2 All thermal conductivity coefficients are lambda 2 The cross sectional areas are all A 2 . The thermal resistance of the sensor is therefore:
wherein, when the sensor structure is designed, L 1 ＞＞L 2 ，A 2 ＞＞A 1 Therefore:
so that the thermal resistance R of the sensor can be obtained TP Can be seen as being influenced only by the cantilever beam.
More specifically, according to the definition formula of solid heat transfer, the solid heat transfer at a certain heat transfer power and the temperature difference generated at two ends of the solid temperature are as follows:
Δ T ＝R*P
wherein R is solid thermal resistance, and P is heat source power; therefore, the thermopile sensor generates a temperature difference under the influence of infrared radiation Q:
Δ TTP ＝R TP *Q*η
P＝Q*η
wherein η is the actual absorption efficiency of the sensor; according to the seebeck effect, the sensitivity, i.e. the voltage output, of the sensor is:
V＝N*α*Δ TTP
wherein N is the logarithm of the thermopile, and alpha is the Seebeck coefficient. Therefore, under the condition that the cantilever beam structure is fixed, the sensitivity of the sensor needs to be improved, namely the temperature difference generated by the sensor needs to be improved, and only the actual absorption efficiency eta of the sensor needs to be improved by a method.
In one embodiment, a cross-sectional view of a thermopile structure 100 adopted by the present invention is shown in fig. 3, which comprises a substrate 300, a hollow region 301 and a silicon nitride absorption region 302 in addition to a suspended thin film 103 and a first cantilever beam 102 and a second cantilever beam 103, wherein the silicon nitride absorption region 302 is additionally added under the present invention compared to the central suspended thin film 103 of the conventional thermopile structure. Due to the thermal resistance R of the sensor TP Only supported cantilever beamThe increased silicon nitride absorption region 302 portion does not affect the change in the output signal of the sensor due to the change in thermal resistance compared to a conventional thermopile. Meanwhile, the silicon nitride absorption area 302 can absorb extra energy to the infrared radiation of the object to be measured, the thicker the silicon nitride absorption area is, the more the infrared radiation is absorbed, the more heat is converted, and the output signal of the thermopile is enhanced.
Example 2:
in a first aspect, the present invention provides a method for manufacturing an infrared thermopile MEMS process with improved absorption efficiency, wherein the silicon nitride absorption region 302 is formed by using the MEMS manufacturing process. According to the anisotropic corrosion characteristics of silicon, silicon nitride is not easy to be corroded by silicon corrosion liquid, so that a silicon corrosion self-termination technology is formed, and a silicon nitride area is reserved. To obtain a new thermopile sensor with a silicon nitride absorbing region 302.
Specifically, the invention enhances the infrared absorption ratio of the suspended film, and enables the chip to obtain more heat signals under the same radiation condition, thereby improving the overall sensitivity of the sensor, and the MEMS process manufacturing method specifically comprises the following steps:
step 1, as shown in fig. 4, coating a photoresist 400 on a silicon substrate in a crystal orientation, and performing photolithography and development to expose a filling region to be covered by silicon nitride;
step 2, as shown in fig. 5, performing silicon dry etching on the top area 401 of the crystal orientation by using an MEMS process to form a pit, depositing silicon nitride by using a thin film deposition method, performing partial area photolithography etching to form a silicon nitride area, and then cleaning to remove the photoresist;
step 3, as shown in fig. 6, forming a thermopile sensor structure by using an MEMS process, including a first cantilever beam 102, a second cantilever beam 103, and a suspended film 101;
and 4, as shown in figure 3, silicon etching is carried out through tetramethyl ammonium hydroxide or potassium hydroxide, and the silicon nitride area is not easy to be etched by the silicon etching solution, so that a final structure is formed.
In one embodiment, the method of thin film deposition includes LPCVD and PECVD.
The preferred embodiments of the present invention have been described in detail with reference to the accompanying drawings, however, the present invention is not limited to the specific details of the embodiments, and various equivalent changes can be made to the technical solution of the present invention within the technical idea of the present invention, and these equivalent changes are within the protection scope of the present invention.
Claims (4)
1. An infrared thermopile sensor for improved absorption efficiency comprising: suspended films arranged in the middle of various areas, a first cantilever beam and a second cantilever beam,
the thermopile infrared detector is characterized in that a silicon nitride absorption area is arranged below the suspended film, the silicon nitride absorption area can perform extra energy absorption on infrared radiation of a detected object, the thicker the thickness of the silicon nitride absorption area is, the more infrared radiation is absorbed, the more heat is converted, and the output signal of the thermopile is enhanced;
the bottom of the silicon nitride absorption region is provided with a substrate, and a hollow region is arranged between the silicon nitride absorption region and the substrate.
2. The infrared thermopile sensor of claim 1, wherein the silicon nitride absorbing region is fabricated using a MEMS fabrication process.
3. A MEMS process manufacturing method of an infrared thermopile sensor for improving absorption efficiency is characterized by comprising the MEMS manufacturing process of claim 2, and specifically comprising the following steps:
step 1, coating photoresist on a silicon substrate in a crystal orientation, and carrying out photoetching development to expose a filling area required to be covered by silicon nitride;
step 2, performing silicon dry etching on the top of the crystal orientation by using an MEMS (micro electro mechanical system) process to form a pit, depositing silicon nitride by using a thin film deposition method, forming a silicon nitride region after performing partial region photoetching, and cleaning to remove the photoresist;
step 3, forming a thermopile sensor structure by using an MEMS process, wherein the thermopile sensor structure comprises a first cantilever beam, a second cantilever beam and a suspended film;
and 4, carrying out silicon corrosion by using tetramethyl ammonium hydroxide or potassium hydroxide, wherein the silicon nitride area is not easy to be corroded by the silicon corrosion solution, and forming a final structure.
4. The MEMS process manufacturing method of the infrared thermopile sensor for improving absorption efficiency of claim 3, wherein the thin film deposition method comprises LPCVD and PECVD.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115830106A (en) * | 2023-02-16 | 2023-03-21 | 智联信通科技股份有限公司 | Auxiliary positioning method for electrified cleaning of machine room equipment |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115830106A (en) * | 2023-02-16 | 2023-03-21 | 智联信通科技股份有限公司 | Auxiliary positioning method for electrified cleaning of machine room equipment |
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