CN115053148A - 光像素投射模块 - Google Patents

光像素投射模块 Download PDF

Info

Publication number
CN115053148A
CN115053148A CN202180012845.0A CN202180012845A CN115053148A CN 115053148 A CN115053148 A CN 115053148A CN 202180012845 A CN202180012845 A CN 202180012845A CN 115053148 A CN115053148 A CN 115053148A
Authority
CN
China
Prior art keywords
light
tof
projection module
photodetector
assembly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180012845.0A
Other languages
English (en)
Inventor
马西莫·卡塔尔多·马齐洛
约翰·拉姆琴科
扬·马费尔德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Ams Osram International GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ams Osram International GmbH filed Critical Ams Osram International GmbH
Publication of CN115053148A publication Critical patent/CN115053148A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/04—Optical or mechanical part supplementary adjustable parts
    • G01J1/0488—Optical or mechanical part supplementary adjustable parts with spectral filtering
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/4204—Photometry, e.g. photographic exposure meter using electric radiation detectors with determination of ambient light
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/4228—Photometry, e.g. photographic exposure meter using electric radiation detectors arrangements with two or more detectors, e.g. for sensitivity compensation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/88—Lidar systems specially adapted for specific applications
    • G01S17/89—Lidar systems specially adapted for specific applications for mapping or imaging
    • G01S17/894—3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481—Constructional features, e.g. arrangements of optical elements
    • G01S7/4814—Constructional features, e.g. arrangements of optical elements of transmitters alone
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481—Constructional features, e.g. arrangements of optical elements
    • G01S7/4816—Constructional features, e.g. arrangements of optical elements of receivers alone
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481—Constructional features, e.g. arrangements of optical elements
    • G01S7/4817—Constructional features, e.g. arrangements of optical elements relating to scanning
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/483—Details of pulse systems
    • G01S7/486—Receivers
    • G01S7/4865—Time delay measurement, e.g. time-of-flight measurement, time of arrival measurement or determining the exact position of a peak
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10—Beam splitting or combining systems
    • G02B27/14—Beam splitting or combining systems operating by reflection only
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/207—Filters comprising semiconducting materials
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/208—Filters for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02016—Circuit arrangements of general character for the devices
    • H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02027—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for devices working in avalanche mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02165—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors using interference filters, e.g. multilayer dielectric filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/1013—Devices sensitive to infrared, visible or ultraviolet radiation devices sensitive to two or more wavelengths, e.g. multi-spectrum radiation detection devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G01J2001/4413—Type
    • G01J2001/442—Single-photon detection or photon counting
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G01J2001/4446—Type of detector
    • G01J2001/446—Photodiode
    • G01J2001/4466—Avalanche
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/28—Interference filters

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Remote Sensing (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Optical Radar Systems And Details Thereof (AREA)

Abstract

一种光像素投射模块(1300)，包括像素光源(1302)、光像素投射组件(1304)和用于测量到外部物体(O)的距离的光学ToF测量组件(1306)，所述ToF测量组件(1306)包括ToF光源(1322)、用于将入射光束(IL)分成反射的主光束分量(ILm)和透射衰减的次光束分量(ILs)的分束光学装置(1304)，和基于APD的ToF光电检测器(1324)。分束光学装置(1304)布置在由ToF光源(1322)发射的光束(IL)的光路中，使得它将每个光束(IL)分成离开模块(1300)并朝向外部物体(O)前进的主光束分量(ILm)和留在模块(1300)内并撞击ToF光电检测器(1324)的次光束分量(ILs)。分束光学装置(1304)还用作所述光像素投射组件(1304)。

Description

光像素投射模块
本申请要求德国专利申请No.102020201453.1的优先权。上述德国专利申请的公开内容在此以引用的方式并入本申请中。
本公开还涉及一种用于集成到电子装置中的光像素投射模块，该光像素投射模块适于发射要被投射到表面上的光像素，该光像素投射模块包括：
-包含像素光源的光像素生成组件；
-光像素投射组件，用于投射由光像素生成组件生成的光像素；和
-光学飞行时间(ToF)测量组件，用于测量投射模块与外部物体之间的距离，
ToF测量组件包括：
a)用于发射光的ToF光源，该光源将被引导到外部物体并从外部物体反射；
b)分束光学装置，用于将入射光束分成反射的主光束分量和透射衰减的次光束分量；和
c)用于光检测的基于APD的ToF光电检测器。
这种光像素投射模块从文献US2019/0310489A1已知。
该已知解决方案的缺点是它需要复杂且耗电的快速电子器件124、170以在ToF测量期间使光电检测与IR激光器510的驱动同步。
因此，本公开的目的在于提供一种具有简单且省电的ToF测量能力的光像素投射模块。
根据本公开，该目的是通过以下来实现的：将分束光学装置设置在ToF光源所发射的光束的光路中，使得其将ToF光源所发射的每一光束分为：
i)离开模块并朝向外部物体前进的主光束分量；和
ii)留在模块内并撞击ToF光电检测器的次光束分量。
由于本公开的分束光学装置，在离开模块时，ToF光束的一小部分被转向到ToF光电检测器上。然后，ToF光电检测器对该次光束分量的检测可用作必要时间测量的触发器。因此，可以省去现有技术中复杂的同步电子器件。
根据优选实施例，本公开的投射模块可以以所有技术上可能的组合包括以下特征中的一个、几个或全部：
-分束光学装置是层堆叠，其上镜面部分用作主要反射镜，下光衰减部分设置在上镜面部分的下方；
-层堆叠沉积在ToF光电检测器的有效表面区域上；
-上镜面部分是光学长通滤光器，其截止波长高于ToF光源发射的光束的最大波长，使得由分束光学装置分开的光束的次光束分量等于不超过光束的总强度的5％；
-下光衰减部分为中性密度滤光器，优选分数透射率不超过0.01％；
-分束光学装置还用作光像素投射组件；
-封装，其容纳投射模块的元件，因此ToF光源和ToF光电检测器共享同一个封装；
-用于检测像素光源和/或ToF光源的辐照度漂移的光电检测器组件；
-光电检测器组件包括一个或多个硅光电倍增管；
-分束光学装置覆盖光电检测器组件和ToF光电检测器二者；
-ToF光电检测器包括至少一个单光子雪崩二极管或SPAD；
-ToF光电检测器由单个SPAD组成，ToF测量组件还包括ToF光扫描装置，用于扫描外部物体上的主光束分量以获得其3D图像。
本公开还涉及一种用于将像素化图像投射到表面上的图像投射装置，该图像投射装置包括如上定义的投射模块和用于将由投射模块投射的光像素分布到表面的不同部分的光扫描模块，从而创建像素化图像。
本公开还涉及使用如上定义的投射模块进行ToF测量的方法。
现在将参照附图详细描述本公开的优选实施例，其中：
图1是根据本公开的光像素投射模块第一实施例的功能框图；
图2是示出图1的投射模块的供电和监控电子器件的不同元件的功能框图；
图3a和3b是图1和2的第一实施例的可行结构实施的透视图；和
图4是根据本公开的光像素投射模块第二实施例的功能框图。
图1示出了根据本公开的光像素投射模块的第一实施例1300。光像素投射模块1300由虚线多边形界定。光像素投射模块1300是能够用于将变化的光束投射到屏幕上以创建用于娱乐或专业应用的图像的像素的装置。它是一种光电元件，可以集成到电子装置中，例如智能手机、可穿戴设备或平板电脑。
光像素投射模块1300适用于发射光P的像素，所述像素将被投射到表面S上。
光像素投射模块1300包括光像素生成组件1302、光像素投射组件1304、光学飞行时间测量组件1306(由虚线包络界定)、光电检测器组件1308以及供电和监控电子器件1310。
在本示例中，光像素生成组件1302由三个激光二极管1312、1314和1316组成。第一激光二极管1312是蓝色激光器并且发射波长为例如475nm的光BL。第二激光二极管1314是绿色激光器并且发射波长为例如515nm的光GL。第三激光二极管1316为红色激光器并且发射波长为例如635nm的光RL。每个激光二极管的功率可能高达50mW。优选地，每个激光二极管发射具有持续时间例如为2ns的间歇单个光脉冲(半高全宽，或FWHM)。三个激光二极管1312、1314和1316以及因此光像素生成组件1302可以一起被限定为像素光源。
在图1中，光像素投射组件1304被实施为具有上镜面部分1318和布置在该上部分1318下方的下光衰减部分1320的层堆叠。在本示例中，层堆叠1304沉积在光电检测器组件1308上。上镜面部分1318可以是光学长通滤光器。该长通滤光器1318可以在使用例如二氧化硅和二氧化钛的多层涂层技术中实施。下光衰减部分1320可以是中性密度滤光器，优选具有不超过0.01％的分数透射率。下光衰减部分1320可以实施为具有微米面积孔径的金属层滤光器(例如基于铝)。
光学飞行时间(TOF)测量组件1306被配置用于测量投射模块1300与外部物体O之间的距离。TOF测量组件1306包括TOF光源1322、分束光学装置1304、基于雪崩光电二极管(APD)的TOF光电检测器1324和TOF测量电子器件1326。
TOF光源1322被配置为发射光IL，该光IL被导向到外部物体O上，并被外部物体O反射。优选地，TOF光源1322是红外(IR)激光二极管。红外激光二极管1322可以发射大约905nm波长的光。红外激光二极管1322的功率可高达1至10W，但优选为50-100mW的量级。红外激光二极管1322可以特别地发射具有大约2ns的持续时间(半高全宽，FWHM)的光脉冲。在本实施例中，所有四个激光二极管1312、1314、1316和1322被组合在一起并形成多波长激光照明块。将投射模块1300的所有光源作为在一个地方的组简化了模块的设置和光源的控制。
像素光源1302(即红色、绿色和蓝色激光器)和飞行时间光源1322(即IR激光器)均相对于层堆叠1304定向，以使得由这些光源发射的光束BL、GL、RL和IL以大约45°的角度α撞击层堆叠1304的外表面1328。
在图1所示的实施例中，光像素投射组件(即层堆叠)1304也用作分束光学装置。这意味着层堆叠1304将入射光束(例如光束IL)分成反射主光束分量ILm和透射衰减次光束分量ILs。更准确地说，层堆叠1304布置在由TOF光源1322和像素光源1302发射的光束的光路中，使得它将每个光束(例如，BL)分成离开模块1300的主光束分量(BLm)和留在模块1300内并撞击TOF光电检测器1324或光电检测器组件1308的次光束分量(BLs)。为此，上镜面部分1318用作主要反射镜。如上所述，主要反射镜1318可以是光学长通滤光器。其截止波长高于TOF光源1322发射的光束IL的最大波长。由于飞行时间光源1322通常为红外光源，这意味着光学长通滤光器1318反射几乎所有的光，不管它来自飞行时间光源1322还是像素光源1302。光束IL、BL、GL和RL由层堆叠1304分离的次光束分量ILs、BLs、GLs和RLs可不超过光束的总强度的5％。
TOF光电检测器1324布置在层堆叠1304下方。在本示例中，光电检测器组件1308和TOF光电检测器1324集成到单个单片光电检测器芯片1330中。层堆叠1304沉积在光电检测器芯片1330的整个顶部表面上并因此在TOF光电检测器1324和光电检测器组件1308的有源表面区域上方。换句话说，层堆叠1304覆盖光电检测器组件1308和TOF光电检测器1324二者。
在图1的第一实施例中，TOF光电检测器1324被实施为单光子雪崩二极管(SPAD)的阵列。SPAD阵列1324可以具有总共64x64像素，像素具有独立的输出。
用于读出由SPAD阵列1324传递的信号的TOF测量电子器件1326可以是时间-数字转换器或TDC。
光电检测器组件1308可以包括四个硅光电倍增器(SiPM)1332、1334、1336和1338。每个硅光电倍增器与激光器1312、1314、1316和1322中的一个相关联。第一硅光电倍增器1332被设置为监测蓝色激光器1312的辐照度。第二硅光电倍增器1334被设置为监测绿色激光器1314的辐照度。第三硅光电倍增器1336被设置为监测红色激光器1316的辐照度。第四硅光电倍增器1338被设置为监测红外激光器1322的辐照度。所有四个硅光电倍增器可以是相同类型的。或者，每个SiPM可能有其自己的特定设计，该设计针对相关颜色的光检测进行了优化。
在图1中，四个硅光电倍增管1332至1338被布置成彼此相邻并齐平。该布置使得，当蓝色激光器1312发射并由分束器1304分开蓝色光束BL时，次光束分量BLs撞击第一硅光电倍增管1332，当绿色激光器1314发射并由分束器1304分开绿色光束GL时，次光束分量GLs撞击第二硅光电倍增管1334，当红色激光器1316发射并由分束器1304分开红色光束RL时，次光束分量RLs撞击第三硅光电倍增器1336，当红外激光器1322发射并被分束器1304分开红外光束IL时，次光束分量ILs撞击第四硅光电倍增器1338。
光电检测器组件1308的目的是检测激光光源辐照度的潜在漂移。四个硅光电倍增管1332至1338每个可以具有10×10个像素并且可以具有多路复用输出。
供电和监控电子器件1310在图2中更详细地示出并且在其中由虚线多边形标识。供电和监控电子器件1310的目的是为光电检测器组件1308和TOF光电检测器1324提供它们操作所必需的电力并且还处理由四个硅光电倍增器1332到1338传递的输出信号D1到D4。为此，供电和监控电子器件1310包括电源1340、鉴别器级1342、转换器级1344和处理级1346。如箭头所示，电源1340单独地为前三个硅光电倍增器(蓝色、绿色和红色)1332、1334和1336提供必要的工作电压。第四硅光电倍增器1338和SPAD阵列1324形成集成对并由电源1340共同供电。
在本示例中，鉴别器级1342和转换器级1344两者都具有用于四个硅光电倍增管的四个单独信号D1至D4的四个单独通道。鉴别器级1342用作从输出信号D1到D4中去除低水平伪影的阈值器。在鉴别器级1342之后的转换器级1344的目的是对信号进行计数或积分。因此，转换器级1344可以是计数器或模数转换器(ADC)。转换器级1344的输出然后用于监测激光器的强度或辐照度，如图2中的箭头M所示。如果激光器传递的光的强度存在漂移，则可以采取通过调整激光器驱动器1348的操作来进行校正动作。这样，可以确保在投射模块1300的帮助下获得的投射图像的最佳亮度。
图1和图2的投射模块1300操作如下：
红色、绿色、蓝色和红外激光器发射非常快的高功率光脉冲RL、GL、BL和IL。大部分激光由层堆叠1304反射。由层堆叠1304反射的红光、绿光和蓝光用于激光投射。为此，反射分量BLm、GLm和RLm可以由光束整形器1311整形并由光扫描模块1313例如在屏幕S上扫描。光扫描模块1313例如可以是微机电***或具有扫描镜的MEMS。如此一来，便在屏幕S的表面上得到像素化图像。投射模块1300与光扫描模块1313共同构成图像投射装置1315。在此图像产生过程中，像素P由投射模块1300的层堆叠1304投射。
四个激光器发出的光的一小部分被层堆叠1304透射和衰减。这小部分到达四个硅光电倍增管1332至1338和SPAD阵列1324。由层堆叠1304透射的红色、绿色、蓝色和红外激光由四个独立的硅光电倍增管以单脉冲电平监控。如果红色、绿色和/或蓝色激光器发射的脉冲强度存在不希望的漂移，则相应地调整激光器驱动器1348的控制以校正在投射模块1300的帮助下投射到屏幕S上的图像的亮度。
可选地，第四硅光电倍增器1338还可用于检测投射模块1300内部的杂散红外光，例如，在第四硅光电倍增器1338检测到连续红外激光脉冲之间的时间间隔期间。杂散红外光以及因此存在于投射模块1300中的IR噪声的量的测量可用于提高信噪比和/或飞行时间测量的准确性。
飞行时间测量如下进行：红外光的到达SPAD阵列1324的次分量ILs触发SPAD阵列的每个像素的时间采集。同时，反射的主光束分量ILm离开模块并朝向外部物体O前进。来自主光束分量ILm的红外光然后从外部物体O反射回来并返回到SPAD阵列1324。这会产生用于SPAD阵列的每个像素的相应的停止信号并且时间采集完成。所得到的飞行时间测量可用于构建外部物体O表面的3D图像。优选地，来自外部物体O的红外光返回触发新一轮的时间采集，一旦红外光在SPAD阵列1324和外部物体O之间来回传播第二次，该过程就停止。这个过程可以在闭环中重复多次。
我们现在将转向图3，其示出了本公开的投射模块1300的可行结构。如图3所示，投射模块1300的所有元件可以集成到单个封装1348中。封装1348可以具有长方体形状。它可以由陶瓷或硅胶制成。在所示示例中，封装1348具有围绕凹槽1352的外缘1350。投射模块1300的各种功能元件布置在该凹槽1352内。盖1354可以覆盖凹槽1352。图3a示出了没有盖1354的投射模块1300。图3b示出了包括盖1354的投射模块1300。盖1354可以由玻璃制成并且包括金属掩模。它可以具有用于光像素P的第一透射窗口1356和用于来自ToF测量组件1306的红外光的第二透射窗口1358。
倾斜支撑件1360设置在凹槽1352中。倾斜支撑件1360具有倾斜表面1362。光电检测器芯片1330附接到倾斜表面1362。
为了更好地观察光电检测器芯片1330，图3a中省略了该芯片顶部的层堆叠1304。实际上，分束层堆叠1304当然覆盖整个光电检测器芯片1330，因此覆盖整个倾斜表面1362。
光电检测器芯片1330分为前半部分H1和后半部分H2，前半部分包括第四硅光电倍增管1338和SPAD阵列1324，后半部分包括前三个硅光电倍增管1332、1334和1336。
SPAD阵列1324可以由单行单光子雪崩二极管组成，如图3a中的虚线矩形所示。优选地，该单行的所有SPAD与盖1354的下表面的垂直距离相同。这可以简化基于飞行时间的3D成像，这是因为它使从一个SPAD像素到下一个SPAD像素的路径长度差异最小化。
四个激光二极管1312、1314、1316和1322以相对于倾斜支撑件1360的面对关系布置。激光器以这样的方式布置在凹槽1352中，使得激光束在平行于凹槽1352的底部的方向上传播。在该配置中，支撑件1360的倾斜表面1362与凹槽1352的底部形成45°角，使得从分束层堆叠1304(未示出)反射的光束分量可以在垂直于由盖1354限定的平面的方向上离开投射模块1300。
参考图4，我们现在将描述根据本公开的投射模块的第二实施例2300。第二实施例2300在许多方面类似于图1至图3所示的第一实施例1300。在下文中，我们将仅描述相对于第一实施例的不同之处。关于相似之处，请参考之前对第一实施例的描述。
第二实施例2300与第一实施例1300的不同之处在于TOF光电检测器2324由单个SPAD组成。此外，TOF测量组件还包括TOF光扫描装置2500，用于扫描在外部物体O上的主光束分量ILm以获得其3D图像。TOF光扫描装置2500可以是微机电***或具有扫描镜的MEMS。这种变型的优点是它允许减小TOF光电检测器2324的尺寸。
综上所述，本公开的光像素投射模块尤其具有以下技术优势：
-集成飞行时间测量组件用于外部物体3D成像；
-通过实时监测激光光源的光强度，自动校正投射图像的亮度；
-红外杂散光监测，以改善飞行时间测量期间的噪声抑制；
-通过使用ToF光束的一小部分作为时间间隔测量的触发器，简化了飞行时间测量；
-非常紧凑的封装概念，多波长激光照明模块和高灵敏度实时多波长光监控模块以面对面的方式集成到单个封装中。

Claims (13)

1.一种用于集成到电子装置中的光像素投射模块(1300)，所述光像素投射模块(1300)适于发射要被投射到表面(S)上的光像素(P)，所述光像素投射模块(1300)包括：
-包含像素光源的光像素生成组件(1302)；
-光像素投射组件(1304)，用于投射由所述光像素生成组件生成的光像素(P)；和
-光学飞行时间ToF测量组件(1306)，用于测量所述投射模块(1300)和外部物体(O)之间的距离，所述ToF测量组件(1306)包括：
a)用于发射光的ToF光源(1322)，该光源将被引导到所述外部物体(O)并从所述外部物体反射；
b)分束光学装置(1304)，用于将入射光束(IL)分成反射主光束分量(ILm)和透射衰减的次光束分量(ILs)；和
c)用于光检测的基于APD的ToF光电检测器(1324)；
其特征在于，所述分束光学装置(1304)设置在所述ToF光源(1322)所发射的光束(IL)的光路中，使得其将所述ToF光源所发射的每一光束(IL)分为：
i)离开所述模块(1300)并朝向所述外部物体(O)前进的主光束分量(ILm)；和
ii)留在所述模块(1300)内并撞击所述ToF光电检测器(1324)的次光束分量(ILs)。
2.根据权利要求1所述的投射模块(1300)，其中所述分束光学装置(1304)是层堆叠，其上镜面部分(1318)用作主要反射镜，下光衰减部分(1320)设置在所述上镜面部分的下方。
3.根据权利要求2所述的投射模块(1300)，其中，所述层堆叠(1304)沉积在所述ToF光电检测器(1324)的有效表面区域上。
4.根据权利要求2或3所述的投射模块(1300)，其中，所述上镜面部分(1318)是光学长通滤光器，其截止波长高于所述ToF光源(1322)发射的光束(IL)的最大波长，使得由所述分束光学装置(1304)分开的光束的次光束分量(ILs)不超过所述光束的总强度的5％。
5.根据权利要求2至4中任一项所述的投射模块(1300)，其中，所述下光衰减部分(1320)为中性密度滤光器，优选其分数透射率不超过0.01％。
6.根据上述权利要求中任一项所述的投射模块(1300)，其中，所述分束光学装置(1304)还用作所述光像素投射组件。
7.根据上述权利要求中任一项所述的投射模块(1300)，还包括封装(1348)，其容纳所述投射模块(1300)的元件，所述ToF光源(1322)和所述ToF光电检测器(1324)因此共享同一个封装。
8.根据上述权利要求中任一项所述的投射模块(1300)，还包括用于检测所述像素光源(1302)和/或所述ToF光源(1322)的辐照度漂移的光电检测器组件(1308)。
9.根据权利要求8所述的投射模块(1300)，其中，所述光电检测器组件(1308)包括一个或多个硅光电倍增管(1332)。
10.根据权利要求8或9所述的投射模块(1300)，其中，所述分束光学装置(1304)覆盖所述光电检测器组件(1308)和所述ToF光电检测器(1324)二者。
11.根据上述权利要求中任一项所述的投射模块(1300)，其中，所述ToF光电检测器(1324)包括至少一个单光子雪崩二极管或SPAD。
12.根据权利要求11所述的投射模块(2300)，其中，所述ToF光电检测器(2324)由单个SPAD组成，所述ToF测量组件还包括ToF光扫描装置(2500)，用于扫描所述外部物体(O)上的主光束分量(ILm)以获得其3D图像。
13.一种用于将像素化图像投射到表面(S)上的图像投射装置(1315)，所述图像投射装置(1315)包括根据前述权利要求中任一项所述的投射模块(1300)和用于将所述投射模块投射的光像素(P)分布到所述表面(S)的不同部分的光扫描模块(1313)，从而创建像素化图像。
CN202180012845.0A 2020-02-06 2021-02-05 光像素投射模块 Pending CN115053148A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102020201453.1 2020-02-06
DE102020201453 2020-02-06
PCT/EP2021/052819 WO2021156446A1 (en) 2020-02-06 2021-02-05 A light pixel projection module

Publications (1)

Publication Number Publication Date
CN115053148A true CN115053148A (zh) 2022-09-13

Family

ID=77199187

Family Applications (3)

Application Number Title Priority Date Filing Date
CN202180013382.XA Pending CN115104013A (zh) 2020-02-06 2021-02-05 环境光传感器
CN202180013294.XA Pending CN115104012A (zh) 2020-02-06 2021-02-05 集成式光电检测半导体光电部件
CN202180012845.0A Pending CN115053148A (zh) 2020-02-06 2021-02-05 光像素投射模块

Family Applications Before (2)

Application Number Title Priority Date Filing Date
CN202180013382.XA Pending CN115104013A (zh) 2020-02-06 2021-02-05 环境光传感器
CN202180013294.XA Pending CN115104012A (zh) 2020-02-06 2021-02-05 集成式光电检测半导体光电部件

Country Status (4)

Country Link
US (3) US20230116903A1 (zh)
EP (3) EP4100705A1 (zh)
CN (3) CN115104013A (zh)
WO (3) WO2021156447A1 (zh)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101853675A (zh) * 2009-03-30 2010-10-06 三洋电机株式会社 光拾取装置
US20130112855A1 (en) * 2011-11-09 2013-05-09 STMicroelectronics (R&D) Ltd. Ambient light sensing system and method
CN104301647A (zh) * 2013-07-16 2015-01-21 Lg电子株式会社 能够在显示区域上投影不同的图像的显示设备
CN105683807A (zh) * 2013-10-31 2016-06-15 微视公司 扫描激光接近检测
CN105895645A (zh) * 2015-02-17 2016-08-24 全视科技有限公司 像素阵列及图像感测***
WO2017172030A1 (en) * 2016-04-01 2017-10-05 Intel Corporation Laser projector and camera
CN107885023A (zh) * 2016-09-29 2018-04-06 意法半导体(R&D)有限公司 图像投影设备中用于亮度和自动聚焦控制的飞行时间感测
CN108227059A (zh) * 2016-12-09 2018-06-29 徕卡显微***复合显微镜有限公司 具有至少一个光谱选择性组件的光学装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL106265A (en) * 1992-07-13 1999-07-14 Hughes Aircraft Co External conductive optical filter
TW200832687A (en) * 2007-01-30 2008-08-01 Univ Nat Taiwan Ambient light sensor
US20110068426A1 (en) * 2009-09-22 2011-03-24 Intersil Americas Inc. Photodiodes and methods for fabricating photodiodes
JP2012021819A (ja) * 2010-07-12 2012-02-02 Panasonic Electric Works Co Ltd 測光装置
US20120313201A1 (en) * 2011-06-13 2012-12-13 Intersil Americas LLC Optical sensor devices including front-end-of-line (feol) optical filters and methods for fabricating optical sensor devices
WO2017094672A1 (ja) * 2015-11-30 2017-06-08 Jsr株式会社 光学フィルター、環境光センサーおよびセンサーモジュール
US10312275B2 (en) * 2017-04-25 2019-06-04 Semiconductor Components Industries, Llc Single-photon avalanche diode image sensor with photon counting and time-of-flight detection capabilities
US10613341B2 (en) 2018-04-09 2020-04-07 Microvision, Inc. Method and apparatus for laser beam combining and speckle reduction

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101853675A (zh) * 2009-03-30 2010-10-06 三洋电机株式会社 光拾取装置
US20130112855A1 (en) * 2011-11-09 2013-05-09 STMicroelectronics (R&D) Ltd. Ambient light sensing system and method
CN104301647A (zh) * 2013-07-16 2015-01-21 Lg电子株式会社 能够在显示区域上投影不同的图像的显示设备
CN105683807A (zh) * 2013-10-31 2016-06-15 微视公司 扫描激光接近检测
CN105895645A (zh) * 2015-02-17 2016-08-24 全视科技有限公司 像素阵列及图像感测***
WO2017172030A1 (en) * 2016-04-01 2017-10-05 Intel Corporation Laser projector and camera
CN107885023A (zh) * 2016-09-29 2018-04-06 意法半导体(R&D)有限公司 图像投影设备中用于亮度和自动聚焦控制的飞行时间感测
CN108227059A (zh) * 2016-12-09 2018-06-29 徕卡显微***复合显微镜有限公司 具有至少一个光谱选择性组件的光学装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SHAAN SENGUPTA等: "" An All-Digital CMOS Ambient Light Sensor using a Single Photon Avalanche Diode"", 2017 IEEE SENSORS, 25 December 2017 (2017-12-25), pages 1 - 3 *

Also Published As

Publication number Publication date
US20230084888A1 (en) 2023-03-16
US20230116903A1 (en) 2023-04-13
EP4100705A1 (en) 2022-12-14
EP4100704A1 (en) 2022-12-14
WO2021156446A1 (en) 2021-08-12
WO2021156447A1 (en) 2021-08-12
CN115104013A (zh) 2022-09-23
EP4100764A1 (en) 2022-12-14
WO2021156445A1 (en) 2021-08-12
CN115104012A (zh) 2022-09-23
US20230062921A1 (en) 2023-03-02

Similar Documents

Publication Publication Date Title
KR102494430B1 (ko) 물체까지의 거리를 결정하기 위한 시스템 및 방법
CN107257935B (zh) 用于探测光的装置和方法
US10921454B2 (en) System and method for determining a distance to an object
US20220120906A1 (en) Synchronized image capturing for electronic scanning lidar systems
US10852400B2 (en) System for determining a distance to an object
US11604259B2 (en) Scanning LIDAR receiver with a silicon photomultiplier detector
KR20200085297A (ko) 방출기들의 어드레스가능 어레이를 사용하는 비행 시간 감지
US20160266253A1 (en) Distance measuring device and photodetector
KR20190057124A (ko) 물체까지의 거리를 결정하기 위한 시스템
US20180164414A1 (en) LiDAR Apparatus
KR20200097683A (ko) Lidar 신호 취득
US10422862B2 (en) LiDAR apparatus
KR102263183B1 (ko) 라이다 장치
US20210116545A1 (en) Lidar measuring system with wavelength conversion
JP6833924B2 (ja) 光電センサ及び物体検出方法
US10746875B2 (en) Sensor system and method to operate a sensor system
US12032095B2 (en) Dynamic range improvements in LIDAR applications
CN115053148A (zh) 光像素投射模块
US20230375672A1 (en) Lidar device with spatial light modulators
JP2001311664A (ja) 測光装置
CN112558038A (zh) 一种激光雷达的扫描方法
US20210364813A1 (en) Detector with deflecting elements for coherent imaging
WO2021144340A1 (en) Apparatus and method for detecting two photon absorption
CN116964476A (zh) 用于组合多个光学部件阵列的***、方法和装置
CN114690339A (zh) 具有用于减少串扰的滤光器和挡板的Lidar接收器

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination