CN115044888A - 用于增加来自安瓿的通量的设备 - Google Patents

用于增加来自安瓿的通量的设备 Download PDF

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CN115044888A
CN115044888A CN202210670164.XA CN202210670164A CN115044888A CN 115044888 A CN115044888 A CN 115044888A CN 202210670164 A CN202210670164 A CN 202210670164A CN 115044888 A CN115044888 A CN 115044888A
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凯尼克·崔
袁晓雄
姚大平
张镁
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Applied Materials Inc
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Abstract

描述了用于半导体制造前驱物的安瓿和使用方法。安瓿包括具有入口端口和出口端口的容器。入口端口在容器内的端部具有喷头。喷头具有至少两个成角度的喷嘴，以引导空腔内的气流，使得气流不垂直于安瓿内的液体的表面。

Description

用于增加来自安瓿的通量的设备
本申请是申请日为2018年3月2日、申请号为201880020038.1、发明名称为“用于增加来自安瓿的通量的设备”的发明专利申请的分案申请。
技术领域
本公开内容一般涉及形成半导体装置的接点的方法。特别地，本公开内容关于用于形成具有临界尺寸控制的自对准接点的处理。
背景技术
半导体工业正在使用越来越多种的用于化学气相沉积(CVD)和原子层沉积(ALD)处理的液体或固体形式的化学品。前驱物通常在具有单个入口和单个出口的密闭容器或安瓿内。
具有低蒸气压的前驱物通常使用载气将蒸汽从安瓿运送到处理反应器。对于这些类型的处理，通常使用两种类型的安瓿：起泡器，其中入口载气进入浸入到前驱物中的管中；及交叉流安瓿(cross-flow ampoule)，其中载气吹扫安瓿中的顶部空间。有些情况下，由于夹带有前驱物，不能使用起泡器，或因为前驱物的通量不符合处理参数，因此不能使用交叉流安瓿。
因此，本领域存在有用于提供比交叉流安瓿更高的前驱物通量的安瓿和方法的需求。
发明内容
本公开内容的一个或多个实施方式涉及一种用于半导体制造前驱物的安瓿。安瓿包含容器，容器具有封闭空腔的底部、侧壁和盖。入口端口与空腔流体连通。入口端口在位于空腔内的入口端口的端部上具有喷头。喷头包含至少两个成角度的喷嘴，以引导气流，使得当液体存在于容器中时。气流不垂直于液体的表面。出口端口与空腔流体连通。
本公开内容的另外的实施方式涉及一种用于半导体制造前驱物的安瓿。安瓿包含容器，容器具有封闭空腔的底部、侧壁和盖。入口端口与空腔流体连通。入口端口在位于空腔内的入口端口的端部上具有喷头。喷头包含三个成角度的喷嘴，以引导气流，使得当液体存在于容器中时，来自每个喷嘴的气流独立地在相对于与液体的表面正交的线而测量的约5°至约7°的范围中。出口端口与空腔流体连通。
本公开内容的其他实施方式涉及一种提供前驱物流的方法。使载气流动通过其中具有液体前驱物的前驱物安瓿的入口端口。在安瓿内使用在入口端口的端部处的喷头引导安瓿内的载气流。喷头包含至少两个成角度的喷嘴，以便以不垂直于液体前驱物的表面的角度引导气流。使载气和前驱物通过出口端口流出安瓿。
附图说明
为了能够详细理解本发明的上述特征的方式，可通过参考实施方式获得上面简要总结的本发明的更具体的描述，其中一些实施方式显示在附图中。然而，应注意附图仅绘示了本发明的典型实施方式，且因此不应被视为限制其范围，因为本发明可允许其他等效的实施方式。
图1显示了根据本公开内容的一个或多个实施方式的安瓿的剖视图；
图2显示了图1的放大区域2；
图3显示了根据本公开内容的一个或多个实施方式的安瓿的局部横截面；及
图4显示了根据本公开内容的一个或多个实施方式的安瓿和管道的示意图。
在附图中，类似的部件及/或特征可具有相同的附图标记。此外，相同类型的各种部件可使用在附图标记之后用在类似部件之间进行区分的破折号和第二符号来区分。若在说明书中仅使用第一附图标记，则实施方式适用于具有相同第一附图标记的任何一个相似部件，而不管第二附图标记如何。附图中部件的交叉影线阴影意欲帮助不同的部件的可视化，且不一定指示不同的构造材料。
具体实施方式
在描述本发明的若干示例性实施方式之前，应该理解本发明不限于以下的实施方式中阐述的构造或处理步骤的细节。本发明能够具有其他实施方式并能够以各种方式实施或执行。
本公开内容的一些实施方式有利地提供具有比交叉流安瓿高的通量的安瓿。一些实施方式有利地为安瓿提供通过液体前驱物而不会起泡的气流。一些实施方式有利地提供了不与前驱物表面正交的气流。
在一些实施方式中，喷头设置在安瓿的入口上，具有在其内的液体上成角度的多个喷嘴。液体的水平与喷头之间的距离被保持，使得喷头不浸没在液体中。
图1显示了用于半导体制造试剂的安瓿100。术语“前驱物”用以描述安瓿100的内容物，且指示流到处理环境中的任何试剂。
安瓿100包括容器110，容器110具有封闭空腔118的底部112、侧壁114和盖116。入口端口120和出口端口130与空腔118流体连通。
入口端口120通常构造成允许连接到气体源且可具有合适的螺纹或密封连接。如第1和2图所示，入口端口120具有通道121，通道121具有界定通道121的横截面宽度的内径。通道121具有可被弯曲、渐缩、或达到平坦端的底端125。
入口端口120在位于空腔118内的入口端口120的端部123上具有喷头122。喷头122是入口端口120的位于通道121的底端125与入口端口120的端部123之间的部分。喷头122包含至少两个成角度的喷嘴140，以引导气流141。喷头122中的喷嘴140的数量可在约2个到约24个的范围中，或在约2个至约18个的范围中，或在约2个至约1个2的范围中，或在约2个至约10个的范围中，或在约2个至约8个的范围中，或在约2个至约6个的范围中，或在约2个至约4个的范围中。在一些实施方式中，在喷头122中有三个喷嘴140。
喷嘴140被配置为提供成角度的气流141，成角度的气流141是相对于与安瓿100内的液体150的表面151正交的线而测量的。参照图2和图3，每个喷嘴140具有相对于与表面151正交145的线成角度θ的轴线144。
角度θ可为不垂直于液体150的表面151的任何合适的角度。每个喷嘴140可具有与任何其他喷嘴140不同的角度θ。在一些实施方式中，相对于与表面151正交145的线，角度θ大于1°、2°、3°或4°。在一些实施方式中，角度θ在约2°至约25°的范围中，或在约2.5°至约15°的范围中，或在约3°至约12°的范围中，或在约4°至约10°的范围中，或在约5°至约7°的范围中。在一些实施方式中，离开喷嘴的气流不垂直于容器110内的液体150的表面151。
出口端口130也与容器110中的空腔118流体连通。出口端口130通常被配置为能够连接到管线，以允许离开容器110的气体流动到处理腔室(或其他部件)。出口端口130可具有螺纹连接，以允许气体管线连接。
在一些实施方式中，如图1所示，盖116是与底部112和侧壁114分开的部件。盖116可使用可移除的螺栓通过适当成形的开口160而连接到容器110的侧壁114。开口160可具有螺纹部分，以允许方便连接螺栓。螺栓可被移除，以允许盖116从容器110移除，使得容器110中的前驱物可被改变或添加。在一些实施方式中，容器110包括定位在盖116和侧壁114之间的O形环162，以形成流体紧密密封。
在一些实施方式中，如图4所示，盖116可与容器110的侧壁114和底部112一体形成。不同的管道配置可连接到盖116，以允许安瓿100被添加到处理腔室。在一些实施方式中，入口管线170连接到入口端口120。入口阀172可定位在气体源175和入口端口120之间的入口管线170上。入口阀172可与盖116一体地形成或作为单独的部件连接到盖116。出口管线180可连接到出口端口130。一些实施方式的出口管线180包括位于出口端口130和处理腔室185之间的出口阀182。入口阀172和出口阀182可用以隔离安瓿100，使得空腔118的内容物与容器110外部的环境隔离。在一些实施方式中，沿着入口管线170及/或出口管线180存在多个阀。阀172、182可为手动阀或气动阀。
在一些实施方式中，安瓿100包括空腔118内的液体150。液体150可为与半导体制造处理一起使用的前驱物。一些实施方式的液体150包含二钴六羰基叔丁基乙炔(CCTBA)。
参照图3，喷头122到液体150的表面151的距离D可能随着时间和前驱物的使用而变化。当使用前驱物时，容器110内的容积将减小，使得距离D增加。距离D足以防止喷头122接触或浸没在液体150中。
在一些实施方式中，通过入口端口120和喷头122的气流141足以扰动液体前驱物的液体/气体界面而不起泡。在一些实施方式中，扰动液体/气体界面在液体150的表面151中形成凹坑(dimple)153。凹坑153可具有高达约3mm的深度。在一些实施方式中，凹坑具有大于或等于大约0.1mm的深度(从表面151测量)。在一些实施方式中，凹坑153具有小于或等于约2.5mm、2mm、1.5mm、1mm、或0.5mm的深度。气流141可在处理期间随着液体150的水平降低而调节，以保持液体/气体界面的充分扰动。一些实施方式的气流141具有足以防止液体150在出口端口130处冷凝的最大速度。
贯穿这份说明书对“一个实施方式”，“某些实施方式”，“一个或多个实施方式”或“实施方式”的引用意味着结合该实施方式而描述的特定特征、结构、材料、或特性被包括在本发明的至少一个实施方式中。因此，贯穿本说明书各处出现的诸如“在一个或多个实施方式中”，“在某些实施方式中”，“在一个实施方式中”或“在实施方式中”的短语不一定代表本发明的相同实施方式。此外，特定特征、结构、材料、或特性可以任何合适的方式在一个或多个实施方式中组合。
尽管已经参考特定实施方式描述了本文的发明，但应该理解这些实施方式仅仅是对本发明的原理和应用的说明。对于熟悉本领域者来说显而易见的是，在不背离本发明的精神和范围的情况下，可对本发明的方法和设备进行各种修改和变化。因此，本发明意欲包括在附随权利要求书及其等效物的范围内的修改和变化。

Claims (20)

1.一种用于半导体制造前驱物的安瓿，所述安瓿包含：
容器，所述容器封闭有空腔，所述空腔与气体源处于固定构造；
入口端口，所述入口端口限定气体通道，所述气体通道具有与所述空腔流体连通的底端，所述入口端口具有喷头，所述喷头在位于所述空腔内的所述入口端口的所述底端处，所述喷头包含至少两个成角度的喷嘴，以引导气体的流动，使得当包含前驱物的液体存在于所述容器中时，来自任何喷嘴的所述气体的所述流动不垂直于所述液体的表面；及
出口端口，与所述空腔流体连通，以将气态前驱物和所述载气引导出所述容器。
2.根据权利要求1所述的安瓿，其中当存在液体时，所述喷嘴在相对于与所述液体的所述表面正交的线而测量的约2°至约25°的范围中独立地成角度。
3.根据权利要求1所述的安瓿，其中当存在液体时，所述喷嘴在相对于与所述液体的所述表面正交的线而测量的约5°至约7°的范围中独立地成角度。
4.根据权利要求1所述的安瓿，其中存在有在两个至四个范围中的喷嘴。
5.根据权利要求1所述的安瓿，其中所述喷嘴的所有喷嘴与所述气体通道的所述底端直接流体连通。
6.根据权利要求1所述的安瓿，其中所述容器包含底部、多个侧壁和盖。
7.根据权利要求6所述的安瓿，其中所述盖是与所述底部和所述侧壁分离的分离部件。
8.根据权利要求7所述的安瓿，其中所述盖使用多个可移除的螺栓而连接到所述容器的所述侧壁。
9.根据权利要求8所述的安瓿，其中所述入口端口的所述底端位于与所述盖相距第一正交距离处，并且所述出口端口位于与所述盖相距第二正交距离处，并且所述第一正交距离大于所述第二正交距离。
10.根据权利要求1所述的安瓿，进一步包含在所述空腔内的所述前驱物。
11.根据权利要求10所述的安瓿，其中所述前驱物包含二钴六羰基叔丁基乙炔。
12.根据权利要求1所述的安瓿，其中所述流动由来自所述气体源的所述气体组成。
13.根据权利要求1所述的安瓿，其中所述气体的所述流动足以扰乱所述液体的液体/气体界面而不起泡。
14.根据权利要求13所述的安瓿，其中扰动所述液体/气体界面在所述液体的所述表面中形成凹坑，所述凹坑具有小于或等于约1mm的深度。
15.根据权利要求1所述的安瓿，其中所述气体的所述流动具有最大速度以防止在所述出口端口处的冷凝。
16.一种用于半导体制造前驱物的安瓿，所述安瓿包含：
容器，所述容器封闭有空腔；
入口端口，与所述空腔流体连通，所述入口端口具有喷头，所述喷头在位于所述空腔内的所述入口端口的底端处，所述喷头包含三个成角度的喷嘴，以引导由气体组成的流动，使得当液体存在于所述容器中时，来自任何喷嘴的所述气流独立地在相对于与所述液体的表面正交的线而测量的约5°至约7°的范围中；及
出口端口，与所述空腔流体连通。
17.根据权利要求16所述的安瓿，其中所述容器包含底部、多个侧壁和盖，并且所述入口端口的所述底端位于与所述盖相距第一正交距离处，并且所述出口端口位于与所述盖相距第二正交距离处，并且所述第一正交距离大于所述第二正交距离。
18.一种提供前驱物的流动的方法，包含以下步骤：
使来自气体源的载气流动通过前驱物安瓿的入口端口，所述前驱物安瓿中具有液体前驱物，所述入口端口界定具有底端的气体通道，并且所述安瓿与所述气体源处于固定构造；
使用位于所述入口端口的所述底端处的喷头引导所述安瓿内的所述载气的所述流动，所述喷头包含至少两个成角度的喷嘴，以便从任何喷嘴以不垂直于所述液体前驱物的表面的角度引导所述气体的所述流动；及
使所述载气和气态前驱物通过出口端口流出所述安瓿。
19.根据权利要求18所述的方法，其中所述载气流足以扰动所述液体前驱物的液体/气体界面而不使气泡通过所述液体前驱物。
20.根据权利要求18所述的方法，其中所述载气流具有最大速度以防止在所述出口端口处的冷凝。
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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7267088B2 (ja) * 2019-05-10 2023-05-01 東京エレクトロン株式会社 タンク、基板処理装置、及びタンクの使用方法
US11505863B2 (en) * 2019-05-31 2022-11-22 Applied Materials, Inc. Methods for forming films on substrates
US11502160B2 (en) * 2020-03-02 2022-11-15 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for forming metal-insulator-metal capacitors
US11270911B2 (en) 2020-05-06 2022-03-08 Applied Materials Inc. Doping of metal barrier layers
US11587873B2 (en) 2020-05-06 2023-02-21 Applied Materials, Inc. Binary metal liner layers

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040000270A1 (en) * 2002-06-26 2004-01-01 Carpenter Craig M. Methods and apparatus for vapor processing of micro-device workpieces
US20060065254A1 (en) * 2004-09-30 2006-03-30 Tsuneyuki Okabe Vaporizer
US20150053134A1 (en) * 2012-03-28 2015-02-26 UNITEX Co., LTD Source container and vapour-deposition reactor
US20160333477A1 (en) * 2015-05-13 2016-11-17 Air Products And Chemicals, Inc. Container for chemical precursors in a deposition process

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06295862A (ja) 1992-11-20 1994-10-21 Mitsubishi Electric Corp 化合物半導体製造装置及び有機金属材料容器
JP2001274145A (ja) * 2000-03-24 2001-10-05 Mitsubishi Electric Corp 液体原料気化装置、半導体装置および半導体装置の製造方法
US7186385B2 (en) 2002-07-17 2007-03-06 Applied Materials, Inc. Apparatus for providing gas to a processing chamber
US7156380B2 (en) 2003-09-29 2007-01-02 Asm International, N.V. Safe liquid source containers
US20050249873A1 (en) 2004-05-05 2005-11-10 Demetrius Sarigiannis Apparatuses and methods for producing chemically reactive vapors used in manufacturing microelectronic devices
JP4299286B2 (ja) * 2005-10-06 2009-07-22 東京エレクトロン株式会社 気化装置、成膜装置及び気化方法
US7464917B2 (en) * 2005-10-07 2008-12-16 Appiled Materials, Inc. Ampoule splash guard apparatus
US7967911B2 (en) * 2006-04-11 2011-06-28 Applied Materials, Inc. Apparatus and methods for chemical vapor deposition
KR100980729B1 (ko) * 2006-07-03 2010-09-07 주식회사 야스 증착 공정용 다중 노즐 증발원
US7959994B2 (en) * 2007-01-29 2011-06-14 Praxair Technology, Inc. Diptube apparatus and delivery method
US8146896B2 (en) * 2008-10-31 2012-04-03 Applied Materials, Inc. Chemical precursor ampoule for vapor deposition processes
US20100119734A1 (en) 2008-11-07 2010-05-13 Applied Materials, Inc. Laminar flow in a precursor source canister
JP5589873B2 (ja) 2011-01-31 2014-09-17 東京エレクトロン株式会社 気化装置及び成膜装置
JP5728772B2 (ja) * 2011-05-31 2015-06-03 株式会社ブイ・テクノロジー 原料ガス発生装置
JP5761067B2 (ja) * 2012-02-13 2015-08-12 東京エレクトロン株式会社 ガス供給装置及び熱処理装置
US10480070B2 (en) 2016-05-12 2019-11-19 Versum Materials Us, Llc Delivery container with flow distributor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040000270A1 (en) * 2002-06-26 2004-01-01 Carpenter Craig M. Methods and apparatus for vapor processing of micro-device workpieces
US20060065254A1 (en) * 2004-09-30 2006-03-30 Tsuneyuki Okabe Vaporizer
CN1754983A (zh) * 2004-09-30 2006-04-05 东京毅力科创株式会社 气化器
US20150053134A1 (en) * 2012-03-28 2015-02-26 UNITEX Co., LTD Source container and vapour-deposition reactor
US20160333477A1 (en) * 2015-05-13 2016-11-17 Air Products And Chemicals, Inc. Container for chemical precursors in a deposition process

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