CN115028477A - DSC ceramic metallization technology and ceramic packaging substrate prepared by same - Google Patents
DSC ceramic metallization technology and ceramic packaging substrate prepared by same Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/89—Coating or impregnation for obtaining at least two superposed coatings having different compositions
- C04B41/90—Coating or impregnation for obtaining at least two superposed coatings having different compositions at least one coating being a metal
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
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- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a DSC ceramic metallization technology and a ceramic packaging substrate prepared by the same. The method comprises the following steps: providing a ceramic substrate; and depositing a metal conducting layer on the surface of the ceramic substrate by adopting a continuous high-power magnetron sputtering technology to obtain the ceramic packaging substrate. The invention adopts DSC technique to prepare ceramic packaging substrate, wherein the DSC technique refers to: the novel metallization process for depositing the metal conducting layer on the surface of the ceramic substrate by using the magnetron sputtering technology with high ionization and high deposition efficiency. Compared with the DPC technology, the ceramic packaging substrate prepared by the DSC technology has the following technical advantages: the bonding strength between the metal conducting layer prepared by adopting the DSC technology and the ceramic substrate is greatly improved, the surface of the metal conducting layer is smooth, the tissue structure is compact, and the electrical conductivity is good; the full vacuum processing environment, green and environmental protection and high production efficiency.
Description
Technical Field
The invention relates to the technical field of electronic packaging, in particular to a DSC ceramic metallization technology and a ceramic packaging substrate prepared by the same.
Background
With the rapid development of microelectronic technology, large scale integrated circuits are gradually miniaturized, multi-functionalized,High frequency, high power, and the like. Due to the increase of the operating voltage and current of the high-power device and the continuous reduction of the chip size, the power density of the high-power device is obviously increased, and higher requirements on heat dissipation and heat resistance of a packaged chip are provided. Ceramic substrate (Al) 2 O 3 ，AlN、Si 3 N 4 Etc.) have high thermal and thermal resistance, while having high strength, good insulation, and low thermal expansion coefficient, have become the inevitable choice for high power electronic devices.
At present, the surface copper-coating process of the ceramic substrate mainly comprises DBC, AMB and DPC. The copper-clad laminate is characterized in that a Cu-O eutectic liquid is formed between copper and a ceramic substrate by adopting a DBC technology at 1111 ℃, and an eutectic transition layer compound is generated through reaction, so that high-strength connection between the ceramic substrate and a copper-clad layer is realized. However, the heating and heat-preserving process conditions are harsh, and it is difficult to effectively control the interface state of the eutectic transition layer in actual production, and interface voids are easily generated. In addition, the eutectic transition layer also causes signal transmission delay and increases loss to some extent. The AMB technology is developed on the basis of the DBC technology, and AgCu welding flux containing active elements Ti and Zr wets and reacts on the interface of ceramic and metal at the temperature of 811 ℃, so that heterogeneous bonding between the ceramic and the metal is realized. The ceramic packaging substrate prepared by the AMB process not only has higher thermal conductivity and higher bonding force, but also has the advantages of small thermal resistance, high reliability and the like. But because the lattice type of the ceramic material belongs to ionic bonds or covalent bonds, on one hand, the metal solder is difficult to wet on the surface of the ceramic material; on the other hand, with the obvious increase of the power density of the packaging module, the temperature of the copper coating layer on the surface of the ceramic substrate is obviously increased, which easily causes serious problems of solder overflow, brazing interface cavity increase, internal short circuit of the module caused by local overheating, and the like. The DPC technology is that firstly, a metal seed layer is prepared on the surface of the ceramic substrate by utilizing a magnetron sputtering technology or other technologies, then the metal seed layer is thickened to the required thickness of the metal layer through an electroplating process, the temperature of the whole preparation process is less than 211 ℃, the adverse effect of high temperature on the performance of the ceramic substrate can be effectively avoided, and meanwhile, the problem caused by brazing filler metal welding cannot be generated. However, the bonding strength between the metal layer prepared by the DPC technique and the ceramic substrate is generally not high, so that the reliability of the circuit board is deteriorated, and meanwhile, a large amount of waste liquid containing heavy metal ions and toxic substances is generally generated during the electroplating process, which causes serious pollution to the environment. Therefore, the surface metallization technology of the existing ceramic package substrate still needs to be improved and developed.
Disclosure of Invention
In view of the above disadvantages of the prior art, the present invention aims to provide a DSC ceramic metallization technology and a ceramic package substrate prepared by the same, and aims to solve the problems of loose texture and poor electrical conductivity of a metal layer, low bonding strength between the metal layer and the ceramic substrate, high energy consumption or environmental pollution, etc. of the existing ceramic substrate metallization technology.
The technical scheme of the invention is as follows:
in a first aspect of the present invention, a DSC ceramic metallization technique is provided, comprising the steps of:
providing a ceramic substrate;
and depositing a metal conducting layer on the surface of the ceramic substrate by adopting a continuous high-power magnetron sputtering technology to obtain the ceramic packaging substrate.
Optionally, before the step of depositing the metal conductive layer on the surface of the ceramic substrate by using the continuous high-power magnetron sputtering technology, the method further includes the steps of: depositing a metal transition layer on the surface of the ceramic substrate by adopting a high ionization rate magnetron sputtering technology, and depositing a metal conducting layer on the surface of the metal transition layer by adopting a continuous high-power magnetron sputtering technology;
and/or after the step of depositing the metal conducting layer on the surface of the ceramic substrate by adopting the continuous high-power magnetron sputtering technology, the method further comprises the following steps:
and depositing a surface functional layer and/or a surface protective layer on the surface of the metal conducting layer, preferably depositing by using a vacuum coating technology.
Optionally, in the step of depositing the metal transition layer on the surface of the ceramic substrate by using a high-ionization-rate magnetron sputtering technique, the high-ionization-rate magnetron sputtering technique may be one or more of a high-power pulse magnetron sputtering technique, a continuous high-power magnetron sputtering technique, and other magnetron sputtering techniques for assisting ionization.
Optionally, the method further includes, while depositing the metal transition layer on the surface of the ceramic substrate: and arranging an ion accelerating grid outside the ceramic substrate to enable the ion energy to be 1-111 keV.
Optionally, in the step of depositing the surface functional layer and/or the surface protective layer on the surface of the metal conductive layer, the vacuum coating technology is vacuum, and may be one or more of vacuum evaporation coating, vacuum arc ion plating, vacuum magnetron sputtering, and vacuum pulsed laser deposition.
Optionally, in the step of depositing the metal conductive layer on the ceramic substrate surface by using a continuous high-power magnetron sputtering technique, process parameters of the continuous high-power magnetron sputtering technique include: power density of discharge>81W/cm 2 The bias voltage is a direct current bias voltage, and the magnitude of the bias voltage is 1-111V.
Optionally, the material of the ceramic substrate is selected from Al 2 O 3 、ZrO 2 、MgO、BeO、ZnO、Cr 2 O 3 、AlN、TiN、BN、TiC、SiC、Si 3 N 4 One or more of them.
Optionally, the material of the metal conductive layer is selected from an alloy consisting of one or more of Cu, Ag, Ti, Au, Mg, Al, V, Cr, Mn, Fe, Co, Ni, Zn, Zr, Nb and Mo;
the thickness of the metal conducting layer is 1-211 mu m.
Optionally, the material of the metal transition layer is selected from one or more of Al, Ti, V, Cr, Ni, Cu, Zn, Zr, Nb, Pd, Ag, Cd, Ta, Pt, and Au.
Optionally, the material of the surface functional layer is selected from an alloy consisting of one or more of Ru, Ti, Cr, Ni, Cu, Rh, Zr, Nb, Pd, Ag, Cd, Ta, Pt, Au.
Optionally, the material of the surface protection layer is selected from one or more of metals, metal alloys, metal oxides, nitrides, carbides, and organic materials.
In a second aspect of the present invention, a ceramic package substrate is provided, wherein the ceramic package substrate is prepared by using the DSC ceramic metallization technology of the present invention.
Has the advantages that: the invention adopts DSC technique to prepare ceramic packaging substrate, and the DSC technique refers to that: the novel metallization process for depositing the metal conducting layer on the surface of the ceramic substrate by using the magnetron sputtering technology with high ionization and high deposition efficiency. Compared with the DPC technology, the ceramic packaging substrate prepared by the DSC technology has the following technical advantages: the bonding strength between the metal conducting layer prepared by adopting the DSC technology and the ceramic substrate is greatly improved, the surface of the metal conducting layer is smooth, the tissue structure is compact, and the electrical conductivity is good; the full vacuum processing environment, green and environmental protection and high production efficiency.
Drawings
FIG. 1 is a schematic flow diagram of a conventional DPC technique for surface metallization of ceramic substrates.
Fig. 2 is a schematic structural diagram of a ceramic package substrate according to an embodiment of the present invention.
Fig. 3 is a surface topography of the metal conductive layer of the ceramic package substrate in embodiment 1.
FIG. 4 is a cross-sectional profile comparison of the metal conductive layer and the electroplated layer of the ceramic package substrate in example 1.
Fig. 5 is a graph illustrating the bonding strength between the metal conductive layer and the ceramic substrate in the ceramic package substrate of example 1.
Detailed Description
The invention provides a DSC ceramic metallization technology and a ceramic packaging substrate prepared by the DSC ceramic metallization technology, and the invention is further described in detail below in order to make the purpose, technical scheme and effect of the invention clearer and clearer. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1, the DPC technique for metallization of a ceramic substrate surface refers to drilling a hole in a ceramic substrate with laser, depositing a metal seed layer on the ceramic substrate by magnetron sputtering or vacuum sputtering, then performing multiple exposure, development, etching, and stripping processes on a photoresist by photolithography to complete a metal circuit, finally filling the hole by an electroplating process to thicken the metal layer (i.e., increase the thickness of the metal circuit), and completing the metallization circuit after the photoresist is removed. The process has the characteristics of high circuit precision and low preparation temperature, and can realize vertical interconnection of the ceramic packaging substrate so as to improve the packaging density. However, the process has the following disadvantages: the metal circuit layer is prepared by adopting an electroplating process, so that the environment is polluted, the electroplating growth speed is low, the thickness of the circuit layer is limited, and the packaging requirement of a high-current power device is difficult to meet.
Accordingly, the embodiment of the present invention provides a DSC ceramic metallization technique, which includes the steps of:
s1, providing a ceramic substrate;
and S2, depositing a metal conducting layer on the surface of the ceramic substrate by adopting a continuous high-power magnetron sputtering technology to obtain the ceramic packaging substrate.
In this embodiment, a ceramic package substrate is prepared by using a DSC technique, which refers to: and (3) depositing a metal conductive layer on the surface of the ceramic substrate by using a magnetron sputtering technology with high ionization and high deposition efficiency. Compared with the DPC technology, the ceramic packaging substrate prepared by the DSC technology has the following technical advantages: the bonding strength between the metal conducting layer prepared by adopting the DSC technology and the ceramic substrate is greatly improved, and the metal conducting layer has smooth surface, compact structure and good conductivity; the full vacuum processing environment, green and environmental protection and high production efficiency.
The DSC technology can also be used in the copper-clad process of components and parts which take nonmetal simple substances or ceramic compounds as substrates, such as high-power IGBT, laminated capacitor (MLCC), vehicle-mounted chips, radar chips and the like.
In step S1, in one embodiment, the ceramic substrate may be made of Al 2 O 3 、ZrO 2 、MgO、BeO、ZnO、Cr 2 O 3 、AlN、TiN、BN、TiC、SiC、Si 3 N 4 And one or more of metal or alloy oxide, nitride, carbide and boride ceramic.
In step S2, in an embodiment, before the step of depositing the metal conductive layer on the surface of the ceramic substrate by using the continuous high-power magnetron sputtering technique, the method further includes the steps of:
vacuumizing: putting the ceramic substrate into a vacuum system, and vacuumizing a vacuum chamber of the vacuum system to a back bottom vacuum of 1 multiplied by 11 through a vacuum pump set -3 Pa below;
plasma cleaning: and introducing inert gas into the vacuum chamber until the working pressure is 1.1-11Pa, and performing plasma cleaning on the ceramic substrate through plasma discharge to eliminate organic matters adsorbed on the surface of the ceramic substrate.
In one embodiment, before the step of depositing the metal conductive layer on the surface of the ceramic substrate by using the continuous high-power magnetron sputtering technology, the method further comprises the following steps: depositing a metal transition layer on the surface of the ceramic substrate by adopting a high ionization rate magnetron sputtering technology, and depositing a metal conducting layer on the surface of the metal transition layer by adopting a continuous high-power magnetron sputtering technology;
and/or after the step of depositing the metal conducting layer on the surface of the ceramic substrate by adopting the continuous high-power magnetron sputtering technology, the method further comprises the following steps:
preferably, a surface functional layer and/or a surface protective layer are/is deposited on the surface of the metal conducting layer by a vacuum coating technology.
As shown in fig. 2, the ceramic package substrate of the present embodiment may further include one or more of a metal transition layer, a surface functional layer, and a surface protection layer. The metal transition layer is positioned between the ceramic substrate and the metal conducting layer and is used for further improving the bonding strength of the ceramic packaging substrate; the surface functional layer is positioned on the metal conductive layer and used for improving weldability or welding quality and the like; the surface protection layer is positioned on the metal conducting layer and used for effectively inhibiting the metal conducting layer from being oxidized or corroded and preventing the conductivity of the ceramic packaging substrate from being reduced; and when the metal conductive layer contains the surface functional layer and the surface protective layer, the surface functional layer is positioned on the metal conductive layer, and the surface protective layer is positioned on the surface functional layer.
In the embodiment, a magnetron sputtering technology and a vacuum coating technology with high ionization and high deposition efficiency are adopted in one vacuum cavity to realize continuous and rapid deposition of multiple functional layers on the surface of the ceramic substrate, so that the bonding strength of the metal conducting layer and the ceramic substrate is greatly improved, the density of the metal conducting layer is controlled, and the conductivity is improved. The prepared ceramic packaging substrate has the advantages of compact structure, smooth surface, good oxidation resistance and weldability and high reliability. In addition, different from the existing DPC technology (sputtering/evaporation combined with electroplating to prepare the ceramic packaging substrate with multiple functional layers), all layers of the ceramic packaging substrate of the embodiment are prepared in a vacuum cavity by adopting a magnetron sputtering technology and a vacuum coating technology which have high ionization and high deposition efficiency, so that the preparation process is a full vacuum environment, green and environment-friendly, and has high production efficiency.
In one embodiment, the method for depositing a metal transition layer on the surface of the ceramic substrate by using the high ionization rate magnetron sputtering technology further comprises the following steps: and arranging an ion accelerating grid outside the ceramic substrate to enable the ion energy to be 1-111 keV. The bonding strength between the metal conductive layer and the ceramic substrate can be further improved by adjusting the ion energy.
In one embodiment, the high ionization rate magnetron sputtering technique may be one or more of a high power pulse magnetron sputtering technique, a continuous high power magnetron sputtering technique, and other magnetron sputtering techniques for assisting ionization in the step of depositing the metal transition layer on the surface of the ceramic substrate.
In one embodiment, the metal transition layer may be a single-layer or multi-layer composite structure, and the material thereof may be selected from one or more metals or alloys of Al, Ti, V, Cr, Ni, Cu, Zn, Zr, Nb, Pd, Ag, Cd, Ta, Pt, Au, and the like.
In one embodiment, the thickness of the metal transition layer is 1.1 to 11 μm.
In one embodiment, in the step of depositing the metal conductive layer on the surface of the ceramic substrate by using the continuous high-power magnetron sputtering technique, the process parameters of the continuous high-power magnetron sputtering technique include: density of discharge power>81W/cm 2 The bias voltage is a DC bias voltage, the magnitude of the bias voltage is 1-111V, and the magnitude of the bias voltage is further preferably 51-111V.
In one embodiment, the material of the metal conductive layer may be one or more selected from Cu, Ag, Ti, Au, Mg, Al, V, Cr, Mn, Fe, Co, Ni, Zn, Zr, Nb, Mo, and the like, and alloys thereof.
In one embodiment, the metal conductive layer has a thickness of 1 to 211 μm. Further, the thickness of the metal conductive layer is 21-51 μm, such as 21 μm, 31 μm, 41 μm, 51 μm, etc.
In an embodiment, in the step of depositing the surface functional layer and/or the surface protective layer on the surface of the metal conductive layer by using a vacuum coating technology, the vacuum coating technology uses vacuum as a working environment, and may be one or more of vacuum evaporation coating, vacuum arc ion plating, vacuum magnetron sputtering, and vacuum pulsed laser deposition.
In one embodiment, the surface functional layer may be a single-layer or multi-layer composite structure, and the material thereof may be one or more selected from Ru, Ti, Cr, Ni, Cu, Rh, Zr, Nb, Pd, Ag, Cd, Ta, Pt, Au, and alloys thereof.
In one embodiment, the thickness of the surface functional layer is 1.1 to 11 μm.
In one embodiment, the surface protection layer may be a single-layer or multi-layer composite structure, and the material thereof may be selected from one or more of metals, metal alloys, metal oxides, nitrides, carbides and other metal/non-metal ceramic materials, organic materials, and the like.
In one embodiment, the surface protection layer has a thickness of 1.1 to 11 μm.
The embodiment of the invention also provides a ceramic packaging substrate, wherein the ceramic packaging substrate is prepared by adopting the DSC ceramic metallization technology.
Referring to fig. 2, the ceramic package substrate of the present embodiment mainly includes a ceramic substrate 1 and a metal conductive layer 3. According to specific use requirements, the ceramic package substrate of the embodiment may further include one or more of a metal transition layer 2, a surface functional layer, and a surface protection layer. The metal transition layer 2 is positioned between the ceramic substrate 1 and the metal conducting layer 3 and is used for further improving the bonding strength of the ceramic packaging substrate; the surface functional layer 4 is positioned on the metal conductive layer 3 and is used for improving the weldability or the welding quality and the like; the surface protection layer 4 is located on the metal conductive layer 3, and is used for effectively inhibiting the metal conductive layer from being oxidized or corroded and preventing the conductivity of the ceramic packaging substrate from being reduced.
For the details of the layers of the ceramic package substrate, the description is omitted here.
The invention is further illustrated by the following specific examples.
Example 1: al (Al) 2 O 3 Preparation of ceramic package substrate
As shown in FIG. 2, a kind of Al 2 O 3 The ceramic packaging substrate comprises a ceramic substrate, a metal transition layer arranged on the surface of the ceramic substrate, and a metal conducting layer arranged on the surface of the metal transition layer, wherein a surface functional layer can be further arranged on the surface of the metal conducting layer as required, and a surface protective layer can be further arranged on the surface of the surface functional layer as required. The novel Al 2 O 3 The preparation method of the ceramic packaging substrate comprises the following steps:
1) vacuumizing: al after cleaning 2 O 3 Putting the substrate into a vacuum system, and vacuumizing the vacuum chamber of the vacuum system to back bottom vacuum of 3X 11 by a vacuum pump set -3 Pa or less.
2) Plasma cleaning: introducing inert gas Ar into the vacuum chamber until the working pressure is stabilized at about 1.1Pa, and discharging Al by plasma 2 O 3 And carrying out plasma cleaning on the surface of the substrate to eliminate organic matters adsorbed on the surface of the substrate, wherein the bias voltage is a direct current bias voltage with the magnitude of 111V, and the cleaning time is 21 min.
3) Interface ion bombardment/implantation treatment and Ti transition layer deposition: preferably, the high-power pulse magnetron sputtering technology is used for discharging the Ti target material, the purity of the Ti target material is 99.99 percent, and the discharge parameters of the high-power pulse magnetron sputtering technology are as follows: the discharge voltage is 811V, the frequency is 111Hz, the pulse width is 211 mus, the ionization rate of Ti material is 81 percent, and Al is added 2 O 3 An ion accelerating grid is arranged outside the substrate to make the ion energy be 51keV, and the boundary is keptIon bombardment/injection treatment is carried out on the surface, and a Ti transition layer is deposited for 2 min.
4) And (3) depositing a Cu conductive layer: discharging the Cu target by adopting a C-HPMS technology, wherein the purity of the Cu target is 99.99%, and the discharge parameters of the C-HPMS are as follows: the discharge power density was 111W/cm 2 And selecting direct current bias as bias voltage, wherein the magnitude of the bias voltage is 111V, and rapidly depositing a Cu conductive layer until the thickness is 31 mu m.
Structural characterization and Performance testing
Al prepared in example 1 2 O 3 The surface topography of the ceramic packaging substrate is observed, as shown in fig. 3, the grain size of the Cu conducting layer on the surface of the substrate is 21-111nm, and the texture structure is compact. Al from FIG. 4 2 O 3 The cross section appearance of the ceramic packaging substrate can be seen, the overall thickness of the Cu conducting layer is about 35.5 mu m, and no structural defects such as obvious microcracks, air holes and the like exist inside the Cu conducting layer. From Al of FIG. 5 2 O 3 The ceramic packaging substrate is tested for binding force by a drawing method, and the result shows that the membrane-based binding force is more than 31N.
Example 2: preparation of AlN ceramic packaging substrate
1) Vacuumizing: putting the cleaned AlN substrate into a vacuum system, and vacuumizing a vacuum chamber of the vacuum system to back bottom vacuum of 3 multiplied by 11 through a vacuum pump set -3 Pa or less.
2) Plasma cleaning: and introducing inert gas Ar into the vacuum chamber until the working pressure is stabilized at about 1.1Pa, carrying out plasma cleaning on the surface of the AlN substrate through plasma discharge to eliminate organic matters adsorbed on the surface of the AlN substrate, wherein the bias is selected from direct current bias with the magnitude of 811V, and the cleaning time is 31 min.
3) Interface ion bombardment/implantation treatment and Ni transition layer deposition: preferably, the high-power pulse magnetron sputtering technology is used for discharging the Ni target material, the purity of the Ni target material is 99.99 percent, and the discharge parameters of the high-power pulse magnetron sputtering technology are as follows: the discharge voltage is 1111V, the frequency is 111Hz, the pulse width is 211 mus, the ionization rate of the Ni material is 81%, an ion accelerating grid is arranged outside the workpiece, the ion energy is 81keV, the ion bombardment/implantation treatment is carried out on the interface, and a Ni transition layer is deposited for 5 min.
4) Deposition of a Cu conductive layer: discharging the Cu target by adopting a C-HPMS technology, wherein the purity of the Cu target is 99.99%, and the discharge parameters of the C-HPMS are as follows: the discharge power density was 111W/cm 2 And selecting a direct current bias voltage as the bias voltage, quickly depositing a Cu conductive layer until the thickness is 31 mu m, wherein the magnitude of the bias voltage is 111V.
The AlN ceramic packaging substrate in the embodiment is tested by the same detection means as the embodiment 1, and the result shows that the grain size of the Cu conducting layer on the surface of the AlN substrate is 21-111nm, the organization structure is compact, the thickness of the Cu conducting layer is about 29.8 mu m, and the film-substrate binding force is more than 41N.
Example 3: preparation of vehicle-mounted chip
This embodiment is the same as embodiment 1, except that this embodiment further includes the steps of:
5) deposition of a Ni protective layer: discharging the Ni target material by a magnetron sputtering technology preferentially, wherein the purity of the Ni target material is 99.99 percent, and the technological parameters of the magnetron sputtering technology are as follows: and the discharge voltage is 811V, the frequency is 111Hz, the pulse width is 211 mu s, and a Ni protective layer is deposited on the surface of the Cu conductive layer for 5 min. The Ni protective layer can effectively inhibit the Cu conductive layer from being oxidized or corroded, and prevent the conductivity of the ceramic packaging substrate from being reduced.
Example 4: preparation of Radar chips
This embodiment is the same as embodiment 2, except that this embodiment further includes the steps of:
5) and (3) depositing an Au functional layer: preferably, the magnetron sputtering technology is used for discharging the Au target material, the purity of the Au target is 99.99 percent, and the technological parameters of the magnetron sputtering technology are as follows: and the discharge voltage 811V, the frequency of 111Hz and the pulse width of 211 mus, and the Au functional layer is deposited on the surface of the Cu conductive layer for 1 min. The Au functional layer can remarkably improve the weldability or welding quality of the ceramic packaging substrate.
In summary, the present invention provides a DSC ceramic metallization technique and a ceramic package substrate prepared by the same. In the invention, the metal or alloy target is discharged in a vacuum cavity by adopting a magnetron sputtering technology and a vacuum coating technology with high ionization and high deposition rate, and high-energy ions are obtained by arranging an ion acceleration grid outside a workpiece, so that the continuous and rapid growth of a metal transition layer, a metal conductive layer, a surface functional layer and a surface protective layer on the surface of a ceramic substrate is realized. The ceramic packaging substrate prepared by the invention has the advantages of compact structure, high conductivity, high film-substrate bonding strength and good weldability, and the production process of the DSC ceramic metallization technology is in a full vacuum environment, is green and environment-friendly, has high production efficiency, and is easy to popularize and apply on a large scale.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.
Claims (10)
1. A DSC ceramic metallization technique, comprising the steps of:
providing a ceramic substrate;
and depositing a metal conducting layer on the surface of the ceramic substrate by adopting a continuous high-power magnetron sputtering technology to obtain the ceramic packaging substrate.
2. The DSC ceramic metallization technique according to claim 1, wherein the step of depositing a metal conductive layer on the surface of the ceramic substrate by using a continuous high power magnetron sputtering technique further comprises the steps of: depositing a metal transition layer on the surface of the ceramic substrate by adopting a high ionization rate magnetron sputtering technology, and depositing a metal conducting layer on the surface of the metal transition layer by adopting a continuous high-power magnetron sputtering technology;
and/or after the step of depositing the metal conducting layer on the surface of the ceramic substrate by adopting the continuous high-power magnetron sputtering technology, the method further comprises the following steps:
and depositing a surface functional layer and/or a surface protective layer on the surface of the metal conducting layer by using a vacuum coating technology.
3. The DSC ceramic metallization technique of claim 2, wherein the step of depositing the metal transition layer on the ceramic substrate surface by using a high ionization rate magnetron sputtering technique, the high ionization rate magnetron sputtering technique comprises one or more of a high power pulse magnetron sputtering technique and a continuous high power magnetron sputtering technique.
4. The DSC ceramic metallization technique according to claim 2, wherein the deposition of the metal transition layer on the surface of the ceramic substrate by the high ionization rate magnetron sputtering technique further comprises: and arranging an ion accelerating grid outside the ceramic substrate to enable the ion energy to be 1-100 keV.
5. The DSC ceramic metallization technique of claim 2, wherein in the step of depositing the surface functional layer and/or the surface protection layer on the surface of the metal conductive layer, the vacuum coating technique is one or more selected from vacuum evaporation coating, vacuum arc ion plating, vacuum magnetron sputtering and vacuum pulsed laser deposition, and uses vacuum as a working environment.
6. The DSC ceramic metallization technique according to claim 1, wherein in the step of depositing a metal conductive layer on the ceramic substrate surface by using a continuous high power magnetron sputtering technique, the process parameters of the continuous high power magnetron sputtering technique include: power density of discharge>80W/cm 2 The bias voltage is DC bias voltage, and the magnitude of the bias voltage is 0-600V.
7. The DSC ceramic metallization technique of claim 1, wherein the material of the ceramic substrate is selected from Al 2 O 3 、ZrO 2 、MgO、BeO、ZnO、Cr 2 O 3 、AlN、TiN、BN、TiC、SiC、Si 3 N 4 One or more of them.
8. The DSC ceramic metallization technique of claim 1, wherein the material of the metal conductive layer is selected from one or more metals or alloys of Cu, Ag, Ti, Au, Mg, Al, V, Cr, Mn, Fe, Co, Ni, Zn, Zr, Nb, Mo;
the thickness of the metal conducting layer is 1-200 μm.
9. The DSC ceramic metallization technique of claim 2, wherein the material of the metal transition layer is selected from one or more of Al, Ti, V, Cr, Ni, Cu, Zn, Zr, Nb, Pd, Ag, Cd, Ta, Pt and Au;
the material of the surface functional layer is selected from one or more of Ru, Ti, Cr, Ni, Cu, Rh, Zr, Nb, Pd, Ag, Cd, Ta, Pt and Au;
the material of the surface protection layer is selected from one or more of metal, metal alloy, metal oxide, nitride, carbide and organic material.
10. A ceramic package substrate, wherein the ceramic package substrate is prepared by the DSC ceramic metallization technique according to any one of claims 1 to 9.
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| CN103360122A (en) * | 2013-06-21 | 2013-10-23 | 西南交通大学 | Method for improving metalized surface performance of ceramic workpiece |
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