CN115020434A - Infrared detector and dark current eliminating method, device and equipment thereof - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 44
- 230000004044 response Effects 0.000 claims abstract description 213
- 238000012360 testing method Methods 0.000 claims abstract description 131
- 230000002093 peripheral effect Effects 0.000 claims abstract description 11
- 239000010410 layer Substances 0.000 claims description 41
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 239000011241 protective layer Substances 0.000 claims description 11
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 claims description 9
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 claims description 9
- 238000003491 array Methods 0.000 claims description 6
- 238000004590 computer program Methods 0.000 claims description 6
- 230000008030 elimination Effects 0.000 claims 2
- 238000003379 elimination reaction Methods 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 239000011651 chromium Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000007737 ion beam deposition Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 229910052984 zinc sulfide Inorganic materials 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- QWUZMTJBRUASOW-UHFFFAOYSA-N cadmium tellanylidenezinc Chemical compound [Zn].[Cd].[Te] QWUZMTJBRUASOW-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000004297 night vision Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
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Abstract
The application discloses an infrared detector and a dark current eliminating method, a device and equipment thereof, which relate to the field of infrared detectors and are used for eliminating dark current backgrounds; the extended pixel array is positioned at the peripheral edge of the pixel array of the infrared detector chip, the local pixel array at least does not comprise pixels at two ends of the extended pixel array in the transverse direction or the longitudinal direction, and a shielding layer is arranged in an area, corresponding to the local pixel array, of the back surface of the infrared detector chip; and determining a dark current response value of the infrared detector according to the first test response value set, and rejecting the dark current response value. The area that this application chip back corresponds local pixel array is equipped with the shielding layer for the pixel in the local pixel array becomes dark yuan, confirms dark current response value and rejects through dark yuan's test response value, and the mode is simple, and need not to reduce operating temperature, and the cost increase is very little.
Description
Technical Field
The application relates to the field of infrared detectors, in particular to an infrared detector and a dark current eliminating method, device and equipment thereof.
Background
The infrared detector plays an important supporting role in the fields of aerospace, meteorological remote sensing, weapon guidance, night vision investigation, deep space exploration and the like. The dark current of the infrared detector affects the detection rate of the infrared detector, and particularly in the field of deep space detection, the detected small signal of a target is very weak, is close to the magnitude of the dark current, even lower, and puts more rigorous requirements on the level of the dark current of the detector.
In order to suppress the influence of dark current, there are two ways, one is to continuously optimize the manufacturing process of the detector, which is difficult and slow, and needs to be continuously explored by researchers, and the other is to reduce the refrigerating temperature for operating the detector, the requirement for the capacity of a refrigerating machine is increased, the manufacturing cost is increased sharply, especially for aerospace load, the lower operating temperature means that more volume weight, more expensive manufacturing and maintenance cost are needed.
Therefore, how to solve the above technical problems should be a great concern to those skilled in the art.
Disclosure of Invention
The application aims to provide an infrared detector and a dark current eliminating method, device and equipment thereof, so that the eliminating difficulty of dark current is reduced, the cost is not increased basically, and the probability of accurately identifying weak and small signals is improved.
In order to solve the technical problem, the application provides a method for eliminating dark current of an infrared detector, which comprises the following steps:
acquiring a first test response value set of a local pixel array in an extended pixel array of an infrared detector chip; the extended pixel array is located at the peripheral edge of the pixel array of the infrared detector chip, the local pixel array at least does not comprise pixels at two ends of the extended pixel array in the transverse direction or the longitudinal direction, and a shielding layer is arranged on the back of the infrared detector chip in an area corresponding to the local pixel array;
and determining a dark current response value of the infrared detector according to the first test response value set, and rejecting the dark current response value.
Optionally, after acquiring the first test response value set of the local pixel array in the extended pixel array of the infrared detector chip, the method further includes:
extracting a test response value of an intermediate pixel array positioned in the middle of the local pixel array from the first test response value set to obtain a second test response value set;
correspondingly, the determining the dark current response value of the infrared detector according to the first test response value set comprises:
and determining a dark current response value of the infrared detector according to the second test response value set.
Optionally, after the extracting a test response value of an intermediate image element array located in the middle of the local image element array from the first test response value set to obtain a second test response value set, the method further includes:
judging whether each test response value in the second test response value set is larger than a preset response value threshold value or not;
if the test response value is larger than the preset response value threshold, rejecting the test response value;
if the test response value is not larger than the preset response value threshold, retaining the test response value to obtain a third test response value set;
correspondingly, determining the dark current response value of the infrared detector according to the second test response value set comprises:
determining an average of all test response values in the third set of test response values as the dark current response value.
Optionally, the determining a dark current response value of the infrared detector according to the first test response value set includes:
determining an average of all test response values in the first set of test response values as the dark current response value.
The application also provides an infrared detector dark current removing devices, includes:
the acquisition module is used for acquiring a first test response value set of a local pixel array in an extended pixel array of the infrared detector chip; the extended pixel array is positioned at the peripheral edge of the pixel array of the infrared detector chip, the local pixel array at least does not comprise pixels at two ends of the extended pixel array in the transverse direction or the longitudinal direction, and a shielding layer is arranged on the back surface of the infrared detector chip in a region corresponding to the local pixel array;
and the determining and rejecting module is used for determining the dark current response value of the infrared detector according to the first test response value set and rejecting the dark current response value.
The application also provides an infrared detector dark current rejecting device, which comprises:
a memory for storing a computer program;
and the processor is used for realizing the steps of any one of the infrared detector dark current eliminating methods when the computer program is executed.
The present application further provides an infrared detector, including:
an infrared detector chip with a pixel array and an extended pixel array is formed on the front surface of the infrared detector chip, and the extended pixel array is positioned at the periphery of the pixel array;
the reading circuit is connected with the infrared detector chip and independently reads the pixel array and the extended pixel array;
the shielding layer is positioned on the back surface of the infrared detector chip and corresponds to a local pixel array in the extended pixel array, and the local pixel array at least does not comprise pixels at two ends in the transverse direction or the longitudinal direction in the extended pixel array.
Optionally, the shielding layer is a metal layer.
Optionally, the infrared detector chip is a mercury cadmium telluride chip.
Optionally, the method further includes:
the protective layer is arranged on the back surface of the infrared detector chip;
correspondingly, the protective layer is positioned on the surface of the protective layer.
The application provides a method for eliminating dark current of an infrared detector, which comprises the following steps: acquiring a first test response value set of a local pixel array in an extended pixel array of an infrared detector chip; the extended pixel array is positioned at the peripheral edge of the pixel array of the infrared detector chip, the local pixel array at least does not comprise pixels at two ends of the extended pixel array in the transverse direction or the longitudinal direction, and a shielding layer is arranged on the back surface of the infrared detector chip in a region corresponding to the local pixel array; and determining a dark current response value of the infrared detector according to the first test response value set, and rejecting the dark current response value.
It can be seen that, in the present application, when the dark current of the infrared detector is rejected, the first test response value set of the local pixel array in the extended pixel array located at the peripheral edge of the pixel array is obtained, and since the shielding layer is arranged in the region of the back of the infrared detector chip corresponding to the local pixel array, the pixels in the local pixel array become dark elements, that is, the first test response value set is the test response value set of the dark elements, and then the dark current response value is determined according to the test response value of the dark elements and rejected, so as to avoid the interference to weak and small signals, and improve the probability of accurately identifying weak and small targets.
In addition, the application also provides a device, equipment and infrared detector with above-mentioned advantage.
Drawings
For a clearer explanation of the embodiments or technical solutions of the prior art of the present application, the drawings needed for the description of the embodiments or prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a flowchart of a method for rejecting dark current of an infrared detector according to an embodiment of the present disclosure;
FIG. 2 is a schematic diagram of a pixel array and an extended pixel array in an embodiment of the present application;
fig. 3 is a flowchart of another method for rejecting dark current of an infrared detector according to an embodiment of the present disclosure;
fig. 4 is a block diagram of a dark current eliminating device for an infrared detector according to an embodiment of the present disclosure;
fig. 5 is a block diagram of a dark current eliminating device for an infrared detector according to an embodiment of the present disclosure;
FIG. 6 is a schematic diagram of another pixel array and an extended pixel array in an embodiment of the present application;
fig. 7 is a schematic structural diagram of a hybrid chip according to an embodiment of the present disclosure;
FIG. 8 is a schematic diagram of a hybrid chip lithographic pattern.
Detailed Description
In order that those skilled in the art will better understand the disclosure, the following detailed description will be given with reference to the accompanying drawings. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than those specifically described and will be readily apparent to those of ordinary skill in the art without departing from the spirit of the present invention, and therefore the present invention is not limited to the specific embodiments disclosed below.
As described in the background section, there are two ways to suppress the effect of dark current, one is to continually optimize the detector manufacturing process, which is difficult and slow, and needs to be continuously explored by researchers, and the other is to reduce the cooling temperature for the detector operation, the requirement for the capability of the refrigerator is increased, the manufacturing cost is increased sharply, especially for aerospace loads, the lower operating temperature means that more volume weight, more expensive manufacturing and maintenance costs are required.
In view of this, the present application provides a method for eliminating dark current of an infrared detector, please refer to fig. 1, which includes:
step S101: acquiring a first test response value set of a local pixel array in an extended pixel array of an infrared detector chip; the extended pixel array is located at the peripheral edge of the pixel array of the infrared detector chip, the local pixel array at least does not comprise pixels at two ends of the extended pixel array in the transverse direction or the longitudinal direction, and a shielding layer is arranged on the back face of the infrared detector chip in a region corresponding to the local pixel array.
The number of the test response values in the first test response value set is equal to the number of the pixels in the local pixel array, and the test response values are levels.
The number of pixels in the pixel array is not limited in this application, as the case may be. For example, the pixel array may be a 640 × 512 array, or an array in other arrangements, etc.
The extended pixel arrays are positioned on the two transverse sides of the pixel array, the number of the pixels in each transverse row is equal to that of the pixels in each transverse row of the pixel array, the extended pixel arrays are positioned on the two longitudinal sides of the pixel array, and the number of the pixels in each longitudinal row is equal to that of the pixels in each longitudinal row of the pixel array; the number of each row of pixels in the extended pixel array positioned on the two transverse sides of the pixel array is equal to the number of each row of pixels in the extended pixel array positioned on the two longitudinal sides of the pixel array. For example, as shown in fig. 2, when the pixel array is an M × N array, the extended pixel arrays located on both sides of the pixel array in the transverse direction are an M × P array, and the extended pixel arrays located on both sides of the pixel array in the longitudinal direction are a P × N array.
Optionally, the extended pixel position is in the pipe accompanying region of the support row of the infrared detector chip, the size of the infrared detector chip cannot be increased, and the subsequent packaging design such as packaging Dewar cannot be greatly influenced.
The infrared detector chip can be a mercury cadmium telluride chip, such as a silicon-based mercury cadmium telluride chip or a cadmium zinc telluride-based mercury cadmium telluride chip.
The front side of the infrared detector chip is the surface for forming the pixel by injection, and the back side is opposite to the front side.
Step S102: and determining a dark current response value of the infrared detector according to the first test response value set, and rejecting the dark current response value.
And eliminating the dark current response value, namely subtracting the dark current response value from the test response value of the pixel array.
It should be noted that, in this embodiment, the method for determining the dark current response value is not limited, and may be set.
Optionally, the determining a dark current response value of the infrared detector according to the first test response value set includes: determining an average of all test response values in the first set of test response values as the dark current response value. Or, removing the largest and/or smallest test response value in the first test response value set, and determining the average value of the remaining test response values as the dark current response value.
According to the method, when the dark current of the infrared detector is eliminated, the first test response value set of the local pixel array in the extended pixel array located at the peripheral edge of the pixel array is obtained, and the shielding layer is arranged in the area, corresponding to the local pixel array, of the back face of the infrared detector chip, so that the pixels in the local pixel array become the dark elements, namely the first test response value set is the test response value set of the dark elements, then the dark current response value is determined according to the test response value of the dark elements, the interference on weak and small signals is avoided, the probability of accurately identifying the weak and small targets is improved, the method is simple, the working temperature does not need to be reduced, and the cost is increased very little.
On the basis of the foregoing embodiment, in an embodiment of the present application, after acquiring the first set of test response values of the local pixel array in the extended pixel array of the infrared detector chip, the method further includes:
extracting a test response value of an intermediate pixel array positioned in the middle of the local pixel array from the first test response value set to obtain a second test response value set;
correspondingly, the determining the dark current response value of the infrared detector according to the first test response value set comprises:
and determining a dark current response value of the infrared detector according to the second test response value set.
It should be noted that, in this embodiment, the method for determining the dark current response value is not limited, and may be set.
Optionally, the determining the dark current response value of the infrared detector according to the second test response value set includes: determining an average of all test response values in the second set of test response values as the dark current response value. Or removing the largest and/or smallest test response value in the second test response value set, and determining the average value of the remaining test response values as the dark current response value.
When the test response value of the pixel in the local pixel array is tested, because light leakage still exists on two sides to cause certain response value increase, and the response value from two sides to the pixel at the middle position has a decreasing process, the response value of the middle pixel array is selected to determine the dark current response value in the embodiment, so that the dark current response value can be reduced, and the accurate recognition probability of weak and small targets is further improved.
Referring to fig. 3, the method for eliminating dark current of an infrared detector includes:
step S201: acquiring a first test response value set of a local pixel array in an extended pixel array of an infrared detector chip; the extended pixel array is located at the peripheral edge of the pixel array of the infrared detector chip, the local pixel array at least does not comprise pixels at two ends of the extended pixel array in the transverse direction or the longitudinal direction, and a shielding layer is arranged on the back face of the infrared detector chip in a region corresponding to the local pixel array.
Step S202: and extracting the test response value of an intermediate pixel array positioned in the middle of the local pixel array from the first test response value set to obtain a second test response value set.
Step S203: and judging whether each test response value in the second test response value set is greater than a preset response value threshold value.
It should be noted that, in the present application, the preset response value threshold is not limited, as the case may be.
Step S204: and if the test response value is larger than the preset response value threshold, rejecting the test response value.
If the test response value is larger than the preset response value threshold value, the pixel corresponding to the test response value is a bad pixel, and the test response value of the bad pixel is eliminated.
Step S205: if the test response value is not larger than the preset response value threshold, the test response value is reserved, and a third test response value set is obtained.
If the test response value is not larger than the preset response value threshold, the pixel corresponding to the test response value is a high-quality pixel, and the test response value of the high-quality pixel is reserved.
Step S206: and determining the average value of all the test response values in the third test response value set as the dark current response value, and rejecting the dark current response value.
In this embodiment, after obtaining a part of the test response values of the middle pixel array, the test response values are further analyzed to remove the test response values of the bad pixels, and the average value of the test response values after screening is used as the dark current response value to remove, so that the accuracy of the dark current response value is improved.
In the following, the device for rejecting the dark current of the infrared detector provided by the embodiment of the present application is introduced, and the device for rejecting the dark current of the infrared detector described below and the method for rejecting the dark current of the infrared detector described above may be referred to correspondingly.
Fig. 4 is a block diagram of a structure of a dark current removing device for an infrared detector according to an embodiment of the present application, where referring to fig. 4, the dark current removing device for an infrared detector may include:
the acquisition module 100 is configured to acquire a first test response value set of a local pixel array in an extended pixel array of an infrared detector chip; the extended pixel array is positioned at the peripheral edge of the pixel array of the infrared detector chip, the local pixel array at least does not comprise pixels at two ends of the extended pixel array in the transverse direction or the longitudinal direction, and a shielding layer is arranged on the back surface of the infrared detector chip in a region corresponding to the local pixel array;
and the determining and rejecting module 200 is configured to determine a dark current response value of the infrared detector according to the first test response value set, and reject the dark current response value.
The infrared detector dark current rejection apparatus of this embodiment is configured to implement the infrared detector dark current rejection method, and thus a specific implementation manner of the infrared detector dark current rejection apparatus may be seen in the foregoing embodiment portions of the infrared detector dark current rejection method, for example, the obtaining module 100 and the determining and rejection module 200 are respectively configured to implement steps S101 and S102 in the infrared detector dark current rejection method, so that the specific implementation manner thereof may refer to descriptions of corresponding partial embodiments, and details are not repeated here.
Optionally, the dark current rejecting apparatus further includes:
the extraction module is used for extracting a test response value of an intermediate pixel array positioned in the middle of the local pixel array from the first test response value set to obtain a second test response value set;
correspondingly, the determining and rejecting module 200 is specifically configured to determine a dark current response value of the infrared detector according to the second test response value set, and reject the dark current response value.
Optionally, the dark current rejecting apparatus further includes:
the judging module is used for judging whether each test response value in the second test response value set is larger than a preset response value threshold value or not;
the rejecting module is used for rejecting the test response value if the test response value is larger than the preset response value threshold;
the reservation module is used for reserving the test response value to obtain a third test response value set if the test response value is not larger than the preset response value threshold;
correspondingly, the determining and rejecting module 200 is specifically configured to determine that an average value of all test response values in the third test response value set is the dark current response value, and reject the dark current response value.
Optionally, the determining and rejecting module 200 is specifically configured to determine an average value of all test response values in the first test response value set as the dark current response value, and reject the dark current response value.
In the following, the infrared detector dark current eliminating device provided in the embodiment of the present application is introduced, and the infrared detector dark current eliminating device described below and the infrared detector dark current eliminating method described above may be referred to in a corresponding manner.
Fig. 5 is a block diagram of a structure of a dark current eliminating device for an infrared detector according to an embodiment of the present application, where the structure includes:
a memory 11 for storing a computer program;
and the processor 12 is configured to implement the steps of the method for rejecting the dark current of the infrared detector according to any one of the above embodiments when executing the computer program.
The present application further provides an infrared detector, including:
an infrared detector chip with a pixel array and an extended pixel array is formed on the front surface of the infrared detector chip, and the extended pixel array is positioned at the periphery of the pixel array;
the reading circuit is connected with the infrared detector chip and independently reads the pixel array and the extended pixel array;
the shielding layer is positioned on the back surface of the infrared detector chip and corresponds to a local pixel array in the extended pixel array, and the local pixel array at least does not comprise pixels at two ends in the transverse direction or the longitudinal direction in the extended pixel array.
The reading circuit in the application can independently read the pixel array and independently read the extended pixel array.
The local pixel array does not comprise pixel fingers at two ends of the extended pixel array in the transverse direction or the longitudinal direction, and at least does not comprise pixels at two ends of the pixel array in the transverse direction for the extended pixel array positioned at two sides of the pixel array; for the extended pixel array positioned at the two longitudinal sides of the pixel array, the local pixel array at least does not comprise pixels at the two longitudinal ends. For example, referring to fig. 2, for an extended array of picture elements located on both lateral sides of the array of picture elements, the local array of picture elements does not include picture elements of the first and mth rows, or does not include picture elements of the first, second, M-1 and mth rows; for the extended pixel array positioned at the two longitudinal sides of the pixel array, the local pixel array does not comprise pixels of a first column and a P-th column, or does not comprise pixels of the first column, a second column, a P-1-th column and the P-th column; and so on.
In order to enable the local pixel array to obtain a good shielding effect, the shielding layer is a metal layer.
The infrared detector chip is a tellurium-cadmium-mercury chip, such as a silicon-based tellurium-cadmium-mercury chip or a tellurium-zinc-cadmium-based tellurium-cadmium-mercury chip.
The infrared detector in the embodiment is provided with the extended pixel array, so that the dark current background can be removed by means of the extended pixel array, other processes for optimizing the detector do not need to be improved, the operation is very simple, the working temperature does not need to be reduced, and the cost increase caused by the increase of the extended pixel is little.
Optionally, in an embodiment of the present application, the infrared detector further includes:
the protective layer is arranged on the back surface of the infrared detector chip;
correspondingly, the protective layer is positioned on the surface of the protective layer.
The protective layer can protect the infrared detector chip, promotes the quality of infrared detection chip, and the protective layer can be for the zinc sulfide layer.
The following describes a process for manufacturing the infrared detector in the present application.
Step S301: and obtaining an infrared detector chip with a front surface formed with a pixel array and an extended pixel array, wherein the extended pixel array is positioned at the periphery of the pixel array.
Step S302: and interconnecting the infrared detector chip and a reading circuit to obtain a mixed chip, wherein the reading circuit independently reads the pixel array and the extended pixel array.
Step S303: forming a shielding layer on the back of the infrared detector chip to obtain an infrared detector; the shielding layer corresponds to a local pixel array in the extended pixel array, and the local pixel array at least does not include pixels at two ends of the extended pixel array in the transverse direction or the longitudinal direction.
The forming process of the shielding layer comprises the following steps:
step S3031: coating photoresist on the back surface of the infrared detector chip, exposing and developing the photoresist, wherein a developing area corresponds to a local pixel array in the extended pixel array, and the local pixel array at least does not comprise pixels at two ends of the extended pixel array in the transverse direction or the longitudinal direction;
step S3032: and forming a shielding layer in the developing area, and removing the photoresist.
When the photoresist is removed, the mixed chip can be placed in an acetone solution at 60 ℃ to be soaked for 30-60 min.
In order to obtain a good shielding effect for the local pixel array, the forming of the shielding layer on the back surface of the infrared detector chip includes:
and forming a metal layer on the back of the infrared detector chip.
The method for forming the metal layer is not limited in the application and is feasible. For example, a metal layer is formed on the back surface of the infrared detector chip by ion beam deposition, or a metal layer is formed by sputtering.
The type of the metal layer is not limited in the application, and the metal layer can be set by itself. For example, the metal layers include chromium layers and gold layers, or metal layers of other metallic materials. The thickness of the chromium layer can be between 50nm and 100nm, and the thickness of the gold layer can be between 100nm and 200 nm.
When ion beam deposition is adopted, in order to avoid the damage of the ion beam to the infrared detector chip, the deposition current is between 80 and 120mA, and the deposition voltage is between 200 and 400V.
Before the formation of the shielding layer, glue is dispensed on the back surface of the infrared detector, and the substrate of the chip is removed.
In the following, a method for eliminating dark current of an infrared detector in the present application is described by taking an example in which a pixel array is a 640 × 512 array.
step 2, performing standard process flow of the mercury cadmium telluride infrared detector to be interconnected according to the design of the step 1 to obtain a mercury cadmium telluride chip with a pixel array and an expanded pixel array formed on the front surface;
step 4, dispensing the interconnected chips, removing the tellurium-zinc-cadmium substrate, growing a ZnS layer 3 on the back of the tellurium-cadmium-mercury chip 1 to protect the surface of the tellurium-cadmium-mercury, and obtaining a mixed chip, as shown in FIG. 7, wherein a filling adhesive 4 is arranged between the readout circuit 2 and the tellurium-cadmium-mercury chip 1;
and 5: coating a layer of photoresist with the thickness of 2-4 mu m on the surface of the long ZnS of the hybrid chip, aligning, photoetching and developing through a mark on a circuit, exposing the central 10 rows of pixels in the corresponding extended pixel array by a photoetching pattern 5, wherein the schematic diagram of the photoetching pattern is shown in FIG. 8;
step 6, placing the photoetched hybrid chip in ion beam deposition equipment, and depositing 50 nm-100 nmCr and 100 nm-200 nmAu by using a beam current of 80 mA-120 mA and a beam pressure of 200V-400V to avoid the damage of an ion beam to the mercury cadmium telluride chip;
step 7, placing the Cr/Au mixed chip after deposition in an acetone solution at 60 ℃ for soaking for 30-60 min, removing the photoresist, and forming an opaque shielding layer in an area of the back corresponding to the central 10 rows of pixels in the extended pixel array;
step 8, a test calculation method: the response values of the central 10 rows of pixels in the extended pixel array are obtained through testing, the response values are decreased from the left side and the right side to the middle position, a certain response value is increased due to light leakage at the left side and the right side, the response values of the central two rows of pixels in the 10 rows are selected, the response values of partial bad elements are removed, the average response value of the response values of the central two rows after the response values of the bad elements are removed is obtained, the response value is used as the intrinsic dark current response value of the hybrid chip, and the response value is used as the background removal.
The embodiments are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same or similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
The infrared detector and the dark current eliminating method thereof provided by the application are described in detail above. The principles and embodiments of the present application are explained herein using specific examples, which are provided only to help understand the method and the core idea of the present application. It should be noted that, for those skilled in the art, it is possible to make several improvements and modifications to the present application without departing from the principle of the present application, and such improvements and modifications also fall within the scope of the claims of the present application.
Claims (10)
1. A dark current eliminating method for an infrared detector is characterized by comprising the following steps:
acquiring a first test response value set of a local pixel array in an extended pixel array of an infrared detector chip; the extended pixel array is positioned at the peripheral edge of the pixel array of the infrared detector chip, the local pixel array at least does not comprise pixels at two ends of the extended pixel array in the transverse direction or the longitudinal direction, and a shielding layer is arranged on the back surface of the infrared detector chip in a region corresponding to the local pixel array;
and determining a dark current response value of the infrared detector according to the first test response value set, and rejecting the dark current response value.
2. The method for eliminating dark current of an infrared detector as claimed in claim 1, wherein after obtaining the first set of test response values of the local pixel array in the extended pixel array of the infrared detector chip, the method further comprises:
extracting a test response value of an intermediate pixel array positioned in the middle of the local pixel array from the first test response value set to obtain a second test response value set;
correspondingly, the determining the dark current response value of the infrared detector according to the first test response value set comprises:
and determining a dark current response value of the infrared detector according to the second test response value set.
3. The infrared detector dark current elimination method of claim 2, wherein after extracting the test response values of the intermediate pixel arrays located in the middle of the local pixel arrays from the first test response value set to obtain a second test response value set, further comprising:
judging whether each test response value in the second test response value set is larger than a preset response value threshold value or not;
if the test response value is larger than the preset response value threshold value, rejecting the test response value;
if the test response value is not larger than the preset response value threshold, retaining the test response value to obtain a third test response value set;
correspondingly, determining the dark current response value of the infrared detector according to the second test response value set comprises:
determining an average of all test response values in the third set of test response values as the dark current response value.
4. The infrared detector dark current culling method of claim 1, wherein determining a dark current response value for an infrared detector from the first set of test response values comprises:
determining an average of all test response values in the first set of test response values as the dark current response value.
5. The utility model provides an infrared detector dark current removing devices which characterized in that includes:
the acquisition module is used for acquiring a first test response value set of a local pixel array in an extended pixel array of the infrared detector chip; the extended pixel array is positioned at the peripheral edge of the pixel array of the infrared detector chip, the local pixel array at least does not comprise pixels at two ends of the extended pixel array in the transverse direction or the longitudinal direction, and a shielding layer is arranged on the back surface of the infrared detector chip in a region corresponding to the local pixel array;
and the determining and rejecting module is used for determining the dark current response value of the infrared detector according to the first test response value set and rejecting the dark current response value.
6. An infrared detector dark current rejection device, comprising:
a memory for storing a computer program;
a processor for implementing the steps of the dark current elimination method of the infrared detector according to any one of claims 1 to 4 when executing the computer program.
7. An infrared detector, comprising:
an infrared detector chip with a pixel array and an extended pixel array is formed on the front surface of the infrared detector chip, and the extended pixel array is positioned at the periphery of the pixel array;
the reading circuit is connected with the infrared detector chip and independently reads the pixel array and the extended pixel array;
the shielding layer is positioned on the back surface of the infrared detector chip and corresponds to a local pixel array in the extended pixel array, and the local pixel array at least does not comprise pixels at two ends in the transverse direction or the longitudinal direction in the extended pixel array.
8. The infrared detector as set forth in claim 7, wherein said shielding layer is a metal layer.
9. The infrared detector of claim 7, wherein the infrared detector chip is a mercury cadmium telluride chip.
10. An infrared detector as claimed in any one of claims 7 to 9, further comprising:
the protective layer is arranged on the back surface of the infrared detector chip;
correspondingly, the protective layer is positioned on the surface of the protective layer.
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