CN115020227A - Wafer laser annealing equipment based on scanning rotating mirror - Google Patents

Wafer laser annealing equipment based on scanning rotating mirror Download PDF

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Publication number
CN115020227A
CN115020227A CN202210710762.5A CN202210710762A CN115020227A CN 115020227 A CN115020227 A CN 115020227A CN 202210710762 A CN202210710762 A CN 202210710762A CN 115020227 A CN115020227 A CN 115020227A
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China
Prior art keywords
laser
wafer
motion platform
mirror
scanning
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CN202210710762.5A
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Chinese (zh)
Inventor
骆公序
汪于涛
王丽
王浩
钱鹏
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Shanghai Institute of Laser Technology
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Shanghai Institute of Laser Technology
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Priority to CN202210710762.5A priority Critical patent/CN115020227A/en
Publication of CN115020227A publication Critical patent/CN115020227A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0643—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Mechanical Engineering (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

The invention particularly relates to a wafer laser annealing device based on a scanning rotating mirror, which comprises a laser, a beam expander, a polarizing element, a reflector, a beam shaper, the scanning rotating mirror, a telecentric field lens, a motion platform, a wafer carrying platform, a camera system and a computer, wherein the motion platform comprises a first motion platform, a second motion platform and a third motion platform which have different motion directions, the bottom of the first motion platform is movably provided with a base, the second motion platform is positioned at the top of the first motion platform, the third motion platform is positioned on the second motion platform, and the wafer carrying platform is arranged on the third motion platform. The base is provided with a bearing structure mechanical structure plane, light beams emitted by the laser are expanded by the beam expander, pass through the polarizing element and then enter the light beam shaper through the reflector for shaping, and then are subjected to direction deflection by the scanning rotating mirror and then enter the surface of the wafer through the telecentric field lens. The laser, the scanning rotating mirror, the motion platform, the wafer carrying platform and the camera system are electrically connected with the computer.

Description

Wafer laser annealing equipment based on scanning rotating mirror
Technical Field
The invention relates to the technical field of semiconductor chip manufacturing, in particular to wafer laser annealing equipment based on a scanning rotating mirror.
Background
With the development of semiconductor technology, the demand of high-performance and high-integration semiconductor chips is increasing, and the difficulty of manufacturing the chips is also increasing. The annealing process of the wafer heats the wafer through a heat source, so that the temperature of the wafer material is increased, and the purposes of crystal lattice repair, doped ion activation, crystal phase change of the wafer, combination enhancement of silicon and metal materials and the like of the wafer are achieved.
The annealing technology in the semiconductor manufacturing process mainly comprises three types of furnace tube annealing, rapid thermal annealing and laser annealing. The mainstream annealing processes are rapid thermal annealing and laser annealing. The rapid thermal annealing heats the whole surface of the silicon wafer by using a halogen bulb or a lamp tube on the front surface or the back surface of the silicon wafer, and the whole is heated to about 1100 ℃, so that the damage repair of the silicon wafer and the activation of elements are realized. Laser annealing heats a local area of the surface of a silicon wafer by laser beams generated by equipment, the heating temperature can exceed 1400 ℃, so that the effect of melting silicon crystals in a surface laser irradiation area is achieved, and then the silicon crystals in the melting area are damaged and repaired and the activation of impurity elements is realized.
The laser in the general laser annealing equipment mainly adopts a KrF laser with 248nm, a 308nmXeCl, an all-solid-state laser with 355nm and 532nm and CO with 10.6 mu m 2 The lasers are all long pulse lasers or continuous lasers, the temperature influence is large, the heat affected zone is large, and the light beam moving mechanism is a two-dimensional scanning galvanometer or a one-dimensional linear light spot. The laser pulse width is 1 mus to 1fs, the laser belongs to short pulse and ultrashort pulse lasers, the heating depth is shallow when the laser annealing is carried out, the annealing processing with low thermal influence can be carried out, and the laser annealing device has the characteristics of narrow laser pulse width, small laser pulse energy, high laser frequency and the like.
Disclosure of Invention
Based on this, it is necessary to provide a wafer laser annealing apparatus based on a scanning rotating mirror, which aims at the problems that the thermal influence of laser annealing is large, the moving speed of a two-dimensional scanning galvanometer is slow, and a one-dimensional linear light spot needs high laser pulse energy.
A wafer laser annealing device based on a scanning rotating mirror comprises a laser, a beam expander, a polarizing element, a reflector, a beam shaper, the scanning rotating mirror, a telecentric field lens, a motion platform, a wafer carrier, a camera system and a computer, wherein the motion platform comprises a first motion platform, a second motion platform and a third motion platform which have different motion directions, the bottom of the first motion platform is provided with a base, the second motion platform is arranged at the top of the first motion platform, the third motion platform is arranged at the top of the second motion platform, and the wafer carrier is arranged at the top of the third motion platform; the laser, the beam expander, the polarizing element, the reflector, the beam shaper, the scanning rotating mirror, the telecentric field lens and the camera system are erected on the mechanical structure plane;
the light beam emitted by the laser is expanded by the beam expander, passes through the polarization element and then enters the light beam shaper through the reflector for shaping, and the shaped light beam is subjected to direction deviation through the scanning rotating mirror and then enters the surface of the wafer through the telecentric field lens;
the laser, the scanning rotating mirror, the motion platform, the wafer carrying platform and the camera system are respectively and electrically connected with the computer.
Further, the first moving platform moves along the X-axis direction, the second moving platform moves along the Y-axis direction, and the third moving platform moves along the Z-axis direction.
Further, the reflecting mirror comprises a first reflecting mirror and a second reflecting mirror, and the light beam is reflected to the second reflecting mirror by the first reflecting mirror and reaches the light beam shaper after being reflected by the second reflecting mirror.
Further, the laser wavelength of the laser is 200 nm-2000 nm, the laser pulse width is 1 mus-1 fs and is adjustable, the laser pulse frequency is 10 KHz-100000 KHz, the laser pulse energy is 1 muJ-1J, the polarization type is linearly polarized light, and the light beam energy distribution is Gaussian distribution.
Further, the polarization element is a lambda/4 wave plate to adjust the polarization state of the laser incident on the surface of the wafer to be circular polarization.
Further, the beam shaper is a Gaussian spot shaper to change the laser from a Gaussian spot to a flat-top spot.
Furthermore, the offset distance of the scanning rotating mirror for offsetting the light beam is 10 mm-1000 mm, and the offset speed of the light beam is 2 m/s-200 m/s.
Furthermore, the telecentric field lens is a single lens or a multi-lens combination lens, the focal length is 10 mm-300 mm, and the field range is 10 mm-1000 mm.
Further, the flatness of the wafer carrying platform is less than 10 μm.
The wafer laser annealing equipment based on the scanning rotating mirror can set laser process parameters, namely the parameters of laser wavelength, laser pulse energy, laser frequency, laser pulse width, beam scanning speed and the like through a computer. The depth control of the set laser annealing is achieved by setting laser process parameters, and the shorter the wavelength is, the smaller the pulse width is, the shallower the laser annealing depth is. The wafer annealing temperature is controlled by controlling the laser energy density by setting the laser pulse energy and the laser frequency, and the wafer annealing temperature is increased as the laser energy density is increased.
The laser energy density is set to be proper, and is generally 0.1-10J/cm 2 . The pulse width of the wafer laser annealing equipment can be adjusted, or large pulse envelopes are formed by combining laser sub-pulses to adjust the pulse width of the pulse envelopes, a light beam moving mode of a scanning rotating mirror is adopted, the high-frequency light frequency of a laser is matched, high-speed light beam movement can be realized by using smaller laser light spots, and the two-dimensional vibrating mirror can be improved by 10 times to achieve the purpose of improving the two-dimensional vibrating mirrorThe upper beam moving speed, the smaller laser spot requires lower pulse energy.
The wafer annealing equipment can control the depth of laser annealing by selecting proper laser wavelength and laser pulse width. The laser annealing with short pulse and ultrashort pulse can obtain lower laser heat input, reduce damage to the wafer and control the laser annealing depth. The wafer annealing temperature is controlled by controlling the laser energy density by setting the laser pulse energy and the laser frequency.
Drawings
Fig. 1 is a schematic structural diagram of a wafer laser annealing apparatus based on a scanning rotating mirror according to an embodiment of the present invention.
In the figure: 100. a laser; 110. a linear polarization state Gaussian beam; 120. a beam expander; 130. a polarizing element; 200. a mirror; 210. a first reflector; 220. a second reflector; 300. a beam shaper; 400. scanning a rotating mirror; 500. a telecentric field lens; 600. a wafer carrier; 610. a wafer; 700. a camera system; 800. a motion platform; 810. a first motion platform; 820. a second motion platform; 830. a third motion platform; 900. and (4) a computer.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1, in one embodiment, a scanning mirror-based wafer laser annealing apparatus includes a laser 100, a beam expander 120, a polarizing element 130, a mirror 200, a beam shaper 300, a scanning mirror 400, a telecentric field lens 500, a camera system 700, a wafer stage 600, a motion stage 800, and a computer 900. The motion platform 800 includes a first motion platform 810, a second motion platform 820 and a third motion platform 830, the bottom of the first motion platform 810 is installed with a base and the first motion platform 810 can move along the X-axis direction, the second motion platform 820 is installed on the top of the first motion platform 810 and can move along the Y-axis direction, and the third motion platform 830 is installed on the top of the second motion platform 820 and can move along the Z-axis direction. Wafer stage 600 is fixedly mounted on top of third motion stage 830 for placement of wafer 610. The base is provided with a mechanical structure platform, and the laser 100, the beam expander 120, the polarizing element 130, the reflector 200, the beam shaper 300, the scanning turning mirror 400, the telecentric field lens 500 and the camera system 700 are sequentially erected on the mechanical structure platform.
In this embodiment, the reflecting mirror 200 includes a first reflecting mirror 210 and a second reflecting mirror 220, the linearly polarized gaussian light beam 110 emitted from the laser 100 is incident on the beam expander 120, passes through the polarizing element 130, becomes a circularly polarized gaussian light beam, is reflected by the first reflecting mirror 210 and the second reflecting mirror 220 in sequence, is incident on the beam shaper 300 for shaping, and is deflected in the X-axis direction by the scanning turning mirror 400, and is incident on the surface of the wafer 610 by the telecentric field lens 500.
In the present embodiment, the laser 100, the scanning turning mirror 400, the motion platform 800, and the camera system 700 are all electrically connected to the computer 900. The laser wavelength of the laser 100 is 532nm, the laser pulse width is 10ps, large pulse envelopes can be formed among laser sub-pulses to adjust the pulse width of the pulse envelopes, the laser sub-pulse frequency is 50000KHz, the laser pulse envelope frequency is 200KHz, the laser pulse envelope energy is 400 muJ, the polarization type is linearly polarized light, and the beam energy distribution is Gaussian distribution.
In this embodiment, the magnification of the beam expander 120 is 3 times, and the polarization element 130 is a λ/4 plate for adjusting the polarization state of the laser light, so that the polarization state of the laser light incident on the surface of the wafer 610 is circularly polarized. The beam shaper 300 is a DOE shaping device for changing the laser energy distribution from a gaussian distribution to a flat-top distribution. The scanning rotating mirror 400 is a one-dimensional scanning rotating mirror, the offset distance of a single light beam is 150mm after the scanning rotating mirror is matched with the telecentric field lens 500, and the offset speed of the light beam is 2-50 m/s. The focal length of the telecentric field lens 500 is 200mm, the field width is 150mm, and the laser beam is incident on the surface of the wafer 610 to form a flat-top spot with a diameter of 200 μm.
In this embodiment, a 12-inch wafer 610 to be annealed is placed on wafer stage 600 at a predetermined angle and at a predetermined position in the XY-axis direction, and at this time, camera system 700 captures a characteristic pattern of the surface of wafer 610, and computer 900 generates a laser annealing beam movement trajectory of wafer 610. Then, the computer 900 is used to set the laser process parameters, such as laser pulse energy 400 muJ, laser frequency 200KHz, laser pulse width 200ns, and beam scanning speed 10 m/s. And then, carrying out wafer annealing processing, turning on the laser 100, enabling the laser to enter the scanning rotating mirror 400 after passing through the beam expander 120, the polarizing element 130, the first reflecting mirror 210, the second reflecting mirror 220 and the beam shaper 300, enabling the scanning rotating mirror 400 to rotate at a high speed, enabling the laser beam to move on the surface of the wafer 610 at a high speed along the X-axis direction after passing through the telecentric field lens 500, and enabling the beam to move 150mm in the X-axis direction. After completing a row of laser annealing tasks in the X-axis direction, the second motion platform 820 moves 0.1mm in the Y-axis direction to perform the next row of annealing tasks in the X-axis direction until the row of annealing tasks in the X-axis direction is completed, and then moves 150mm in the X-axis direction to perform the next row of annealing tasks in the X-axis direction until the annealing process of the whole wafer 610 is completed. After the annealing of the entire wafer 610 is completed, the wafer 610 is removed from the wafer stage 600.
The wafer laser annealing equipment based on the scanning rotating mirror can set laser process parameters, namely parameter settings of laser wavelength, laser pulse energy, laser frequency, laser pulse width, beam scanning speed and the like. The depth control of the set laser annealing is achieved by setting laser process parameters, the shorter the wavelength is, the smaller the pulse width is, the shallower the laser annealing depth is, the control of the laser energy density is performed by setting the laser pulse energy and the laser frequency so as to control the wafer annealing temperature, and the higher the laser energy density is, the higher the wafer annealing temperature is. The laser energy density is set to be proper, and is generally 0.1-10J/cm 2 。
The pulse width of the wafer laser annealing equipment can be adjusted, or large pulse envelopes are formed by combining laser sub-pulses and pulse width adjustment of the pulse envelopes is carried out, in addition, a light beam moving mode of a scanning rotating mirror is adopted, the high-frequency light frequency of a laser is matched, high-speed light beam movement can be realized by using small laser spots, the light beam moving speed can be increased by more than 10 times compared with a two-dimensional vibrating mirror, and the pulse energy required by a small laser light plate is lower.
The wafer annealing equipment can perform depth control of laser annealing by selecting proper laser wavelength and laser pulse width, lower laser heat input can be obtained by adopting short-pulse and ultrashort-pulse laser annealing, damage to a wafer is reduced, and the depth of laser annealing can be controlled. The wafer annealing temperature is controlled by controlling the laser energy density by setting the laser pulse energy and the laser frequency.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the present invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.

Claims (9)

1. A wafer laser annealing device based on a scanning rotating mirror is characterized by comprising a laser, a beam expander, a polarizing element, a reflector, a beam shaper, the scanning rotating mirror, a telecentric field lens, a motion platform, a wafer carrier, a camera system and a computer, wherein the motion platform comprises a first motion platform, a second motion platform and a third motion platform which have different motion directions, the bottom of the first motion platform is provided with a base, the second motion platform is arranged at the top of the first motion platform, the third motion platform is arranged at the top of the second motion platform, and the wafer carrier is arranged at the top of the third motion platform; the laser, the beam expander, the polarizing element, the reflector, the beam shaper, the scanning rotating mirror, the telecentric field lens and the camera system are erected on the mechanical structure plane;
the light beam emitted by the laser is expanded by the beam expander, passes through the polarization element and then enters the light beam shaper through the reflector for shaping, and the shaped light beam is subjected to direction deviation through the scanning rotating mirror and then enters the surface of the wafer through the telecentric field lens;
the laser, the scanning rotating mirror, the motion platform, the wafer carrying platform and the camera system are respectively and electrically connected with the computer.
2. The scanning mirror-based wafer laser annealing apparatus of claim 1, wherein the first motion stage moves in an X-axis direction, the second motion stage moves in a Y-axis direction, and the third motion stage moves in a Z-axis direction.
3. The apparatus of claim 1, wherein the mirror comprises a first mirror and a second mirror, and the beam is reflected by the first mirror to the second mirror and then to the beam shaper after being reflected by the second mirror.
4. The wafer laser annealing equipment based on the scanning rotating mirror as claimed in claim 1, wherein the laser wavelength of the laser is 200 nm-2000 nm, the laser pulse width is 1 μ s-1 fs and is adjustable, the laser pulse frequency is 10 KHz-100000 KHz, the laser pulse energy is 1 μ J-1J, the polarization type is linearly polarized light, and the beam energy distribution is gaussian distribution.
5. The wafer laser annealing apparatus based on scanning turning mirror of claim 1, wherein the polarization element is a λ/4 plate to adjust the polarization state of the laser incident on the wafer surface to circular polarization.
6. The scanning mirror based wafer laser annealing apparatus of claim 1 wherein the beam shaper is a gaussian spot shaper to change the laser from a gaussian spot to a flat-top spot.
7. The wafer laser annealing equipment based on the scanning rotating mirror as claimed in claim 1, wherein the scanning rotating mirror shifts the light beam by an offset distance of 10mm to 1000mm, and the shift speed of the light beam is 2m/s to 200 m/s.
8. The wafer laser annealing equipment based on the scanning rotating mirror as claimed in claim 1, wherein the telecentric field lens is a single lens or a multi-lens combination lens, the focal length is 10 mm-300 mm, and the field range is 10 mm-1000 mm.
9. The scanning turning mirror based wafer laser annealing device according to claim 1, wherein the flatness of the wafer stage is less than 10 μm.
CN202210710762.5A 2022-06-22 2022-06-22 Wafer laser annealing equipment based on scanning rotating mirror Pending CN115020227A (en)

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Application Number Priority Date Filing Date Title
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117253828A (en) * 2023-11-16 2023-12-19 深圳市星汉激光科技股份有限公司 Semiconductor laser for semiconductor wafer heating annealing

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117253828A (en) * 2023-11-16 2023-12-19 深圳市星汉激光科技股份有限公司 Semiconductor laser for semiconductor wafer heating annealing
CN117253828B (en) * 2023-11-16 2024-02-20 深圳市星汉激光科技股份有限公司 Semiconductor laser for semiconductor wafer heating annealing

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