CN115016048A - Antireflection microstructure and manufacturing method thereof - Google Patents
Antireflection microstructure and manufacturing method thereof Download PDFInfo
- Publication number
- CN115016048A CN115016048A CN202210674293.6A CN202210674293A CN115016048A CN 115016048 A CN115016048 A CN 115016048A CN 202210674293 A CN202210674293 A CN 202210674293A CN 115016048 A CN115016048 A CN 115016048A
- Authority
- CN
- China
- Prior art keywords
- microstructure
- layer
- antireflection
- substrate
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 67
- 239000000463 material Substances 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims description 22
- 230000003667 anti-reflective effect Effects 0.000 claims description 20
- 229920002120 photoresistant polymer Polymers 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 230000000694 effects Effects 0.000 abstract description 15
- 230000003287 optical effect Effects 0.000 abstract description 9
- 238000009826 distribution Methods 0.000 abstract description 5
- 230000035772 mutation Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 176
- 238000002834 transmittance Methods 0.000 description 14
- 230000005540 biological transmission Effects 0.000 description 12
- 230000008859 change Effects 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 229910052732 germanium Inorganic materials 0.000 description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000005387 chalcogenide glass Substances 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 239000005083 Zinc sulfide Substances 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- XASAPYQVQBKMIN-UHFFFAOYSA-K ytterbium(iii) fluoride Chemical compound F[Yb](F)F XASAPYQVQBKMIN-UHFFFAOYSA-K 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical group [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 2
- 230000003592 biomimetic effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000023077 detection of light stimulus Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The application discloses an antireflection microstructure, which relates to the technical field of optics and is used on an optical device window and comprises a substrate; the microstructure layer is arranged on the upper surface and/or the lower surface of the substrate and comprises at least two microstructure array layers which are arranged in a stacked mode, each microstructure array layer comprises a plurality of microstructures, and the microstructures in different microstructure array layers are made of different materials. The microstructure layer of the antireflection microstructure comprises a microstructure array layer, the microstructure array layer comprises a plurality of microstructures, the microstructure array layer can be equivalent to a film with gradient distribution of gradient refractive index, the antireflection effect is achieved, the number of layers of the microstructure array layer is more than two layers, materials of different microstructure array layers are different, mutation of the refractive index is reduced, Fresnel reflection can be reduced, the antireflection capacity of the antireflection microstructure is enhanced, and a better antireflection effect is achieved. The application also provides a manufacturing method of the antireflection microstructure with the advantages.
Description
Technical Field
The present disclosure relates to the field of optical technologies, and in particular, to an antireflection microstructure and a manufacturing method thereof.
Background
When light rays enter the interface surface of two media, Fresnel reflection occurs, which causes great obstruction to the transmission and detection of light energy, and the optical windows of optical devices such as cameras, infrared detectors and the like need to have transmission capacity as high as possible, and reflection needs to be eliminated as far as possible.
In order to satisfy a specific refractive index required for antireflection, an antireflection microstructure based on a moth-eye biomimetic technique can well satisfy the above requirements. The existing antireflection microstructure comprises a substrate and a layer of cylinder or cone microstructure array which is periodically arranged on the substrate, wherein the microstructure array can be regarded as a layer of film with fixed refractive index or gradient distribution of graded refractive index, so that a certain antireflection effect is realized. However, the antireflection microstructure having a single-layer microstructure array can only achieve an antireflection effect at a specific wavelength, and the broadband antireflection effect is poor, that is, the antireflection capability is poor. If the optimal broadband antireflection is to be realized, the microstructure needs to have a specific section shape and an extremely high depth-to-width ratio, and the processing difficulty is extremely high and difficult to realize.
Therefore, how to solve the above technical problems should be a great concern to those skilled in the art.
Disclosure of Invention
The application aims to provide an antireflection microstructure and a manufacturing method thereof, so that the antireflection effect of the antireflection microstructure is improved, and the manufacturing difficulty is reduced.
In order to solve the above technical problem, the present application provides an antireflection microstructure, including:
a substrate;
the microstructure layer is arranged on the upper surface and/or the lower surface of the substrate and comprises at least two microstructure array layers which are arranged in a stacked mode, each microstructure array layer comprises a plurality of microstructures, and the microstructures in the different microstructure array layers are made of different materials.
Optionally, the number of the microstructure array layers is three.
Optionally, the shape of the microstructure is any one of a cylinder, a prism, a circular truncated cone, a truncated pyramid, a parabolic cone and a pyramid.
Optionally, each microstructure array layer has a shape of any one of a square, a rectangle, a circle, and a polygon including at least five line segments.
Optionally, the height of the microstructure layer is between 0.1 μm and 50 μm.
Optionally, the center-to-center distance between adjacent microstructures in the microstructure array layer is between 0.1 μm and 50 μm.
Optionally, the method further includes:
and the anti-reflection layer is arranged in the area which is not covered by the micro-structural layer on the upper surface and/or the lower surface of the substrate and on the surface of the micro-structural layer.
Optionally, the thickness of the anti-reflection layer is between 0.1 μm and 10 μm.
The application also provides a manufacturing method of the antireflection microstructure, which comprises the following steps:
obtaining a substrate;
depositing a microstructure layer to be processed on the upper surface and/or the lower surface of the substrate, wherein the microstructure layer to be processed comprises at least two microstructure array layers to be processed which are arranged in a stacked manner, and different materials of the microstructure array layers to be processed are different;
coating photoresist on the surface of the microstructure layer to be processed, which is far away from the substrate, exposing and developing the photoresist to form a patterned mask;
etching the microstructure layer to be processed according to the graphical mask to form a microstructure layer, wherein the microstructure layer comprises at least two microstructure array layers which are arranged in a stacked mode, and each microstructure array layer comprises a plurality of microstructures;
and removing the graphical mask to obtain the antireflection microstructure.
Optionally, after removing the patterned mask, the method further includes:
and depositing an antireflection layer on the upper surface and/or the lower surface of the substrate in the area not covered by the microstructure layer and the surface of the microstructure layer.
The application provides an subtract reflection microstructure includes: a substrate; the microstructure layer is arranged on the upper surface or the lower surface of the substrate and comprises at least two microstructure array layers which are arranged in a stacked mode, each microstructure array layer comprises a plurality of microstructures, and materials of the microstructures in the microstructure array layers are different.
It can be seen that the micro-structure layer that antireflection microstructure in this application set up on the base includes the microstructure array layer, and every layer of microstructure array layer includes a plurality of microstructures, and the microstructure array layer can be equivalent to the film that has gradual change refractive index gradient distribution, realizes antireflection effect, and the number of piles of microstructure array layer is more than two-layer simultaneously, and the material of different microstructure array layers is different, reduces the sudden change of refracting index, consequently can reduce to take place fresnel reflection, strengthens antireflection microstructure's antireflection ability, realizes better anti-reflection effect.
In addition, the application also provides a manufacturing method of the antireflection microstructure with the advantages.
Drawings
For a clearer explanation of the embodiments or technical solutions of the prior art of the present application, the drawings needed for the description of the embodiments or prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an antireflection microstructure provided in an embodiment of the present application;
fig. 2 is a top view of an anti-reflective microstructure provided in an embodiment of the present application;
fig. 3 is a schematic structural diagram of another antireflection microstructure provided in an embodiment of the present application;
fig. 4 is a schematic structural diagram of another antireflection microstructure provided in an embodiment of the present application;
FIG. 5 is a graph of transmittance curves of the antireflective microstructure shown in FIG. 3 and transmittance curves of a conventional antireflective microstructure;
FIG. 6 is a graph of transmittance curves of the antireflective microstructure of FIG. 4 and a conventional antireflective microstructure;
fig. 7 is a flowchart of a method for manufacturing an anti-reflective microstructure according to an embodiment of the present disclosure;
fig. 8 to 13 are flow charts of processes for fabricating an anti-reflective microstructure according to embodiments of the present disclosure;
fig. 14 is a flowchart illustrating another method for fabricating an anti-reflective microstructure according to an embodiment of the present disclosure;
in the figure, 1, a substrate, 2, a microstructure layer, 3, an anti-reflection layer, 4, photoresist, 5, a patterned mask, 21, a microstructure array layer, 21' and a microstructure array layer to be processed.
Detailed Description
In order that those skilled in the art will better understand the disclosure, the following detailed description is given with reference to the accompanying drawings. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than those specifically described and will be readily apparent to those of ordinary skill in the art without departing from the spirit of the present invention, and therefore the present invention is not limited to the specific embodiments disclosed below.
As described in the background section, the conventional antireflection microstructure includes a substrate and a layer of pillar or cone microstructure array periodically arranged on the substrate, and the antireflection effect of the antireflection microstructure is poor.
In view of the above, the present application provides an anti-reflective microstructure, please refer to fig. 1, which includes:
a substrate 1;
the microstructure layer 2 is arranged on the upper surface and/or the lower surface of the substrate 1, the microstructure layer 2 comprises at least two microstructure array layers 21 which are arranged in a stacked mode, each microstructure array layer 21 comprises a plurality of microstructures, and the microstructures in the microstructure array layers 21 are made of different materials.
The microstructures in different microstructure array layers 21 are stacked in a one-to-one correspondence manner, and the sizes of the microstructures are the same. The material of the microstructure may be selected from common infrared materials or optical materials, such as silicon, germanium, zinc selenide, chalcogenide glass, quartz glass, PMMA (polymethyl methacrylate) polymer, ytterbium fluoride, and the like.
The shape of each microstructure array layer 21 is not limited in this application, and may be set by itself. For example, the shape of each microstructure array layer 21 may be any one of a square, a rectangle, a circle, a polygon including at least five line segments, or other irregular shapes, etc. Further, the shape of the microstructure is not limited in the present application, and the microstructure can be set by itself. For example, the shape of the microstructures can be any of a cylinder, a prism (e.g., a quadrangular prism, a hexagonal prism, etc.), a truncated cone, a truncated pyramid, a parabolic cone, a pyramid, or other irregular shapes. When the microstructure is cylindrical and the microstructure array layer 21 is rectangular, a top view of the antireflection microstructure is shown in fig. 2.
Compared with a multilayer film antireflection structure in the prior art, the microstructure layer 2 in the application comprises at least two microstructure array layers 21, and the microstructure layer 2 in the application can provide a more flexible equivalent refractive index, so that a better antireflection effect can be realized by using fewer film layers.
The number of the microstructure array layers 21 is greater than or equal to 2, and the larger the number of the layers, the better the antireflection effect. As an implementation manner, the number of the microstructure array layers 21 is three, and a schematic structure of the antireflection microstructure is shown in fig. 3.
When the microstructure in the antireflective microstructure in the prior art is a cone, in order to obtain a required antireflective effect, an extremely high depth-to-width ratio is required, so that the processing difficulty of the antireflective microstructure in the prior art is extremely high, and because the multilayer microstructure array layer 21 is arranged in the application, the refractive index abrupt change is reduced, the high depth-to-width ratio is not required when the microstructure in the application is a cone, and the manufacturing difficulty can be reduced; when the microstructure is a cylinder in the application, compared with the cone microstructure in the prior art, the manufacturing process is simple and the manufacturing difficulty is low.
The material of the substrate 1 can be selected from common infrared materials or optical materials, such as silicon, germanium, zinc selenide, chalcogenide glass, quartz glass, PMMA polymer, and the like.
It should be noted that, in the present application, the height of the microstructure layer 2 is not limited, and the specific height of the microstructure layer 2 may be determined according to the operating wavelength of the antireflection microstructure and the material of the microstructure. For example, the height of the microstructure layer 2 is between 0.1 μm and 50 μm, for example, 0.1 μm, 1 μm, 5 μm, 10 μm, 15 μm, 25 μm, 35 μm, 45 μm, 50 μm, etc., when the operating wavelength is in the long-wave infrared band of 8 μm to 14 μm.
It should be further noted that, in the present application, the center-to-center distance between adjacent microstructures is not limited, and may be determined specifically according to the operating wavelength of the antireflection microstructure and the material of the microstructure. For example, when the operating wavelength is in the long-wave infrared band of 8 μm to 14 μm, the center-to-center distance between adjacent microstructures in the microstructure array layer 21 is 0.1 μm to 50 μm, such as 0.1 μm, 1 μm, 5 μm, 10 μm, 15 μm, 25 μm, 35 μm, 45 μm, 50 μm, and the like.
On the basis of any of the above embodiments, in an embodiment of the present application, referring to fig. 4, the antireflection microstructure further includes:
and the antireflection layer 3 is arranged on the upper surface and/or the lower surface of the substrate 1 in the region not covered by the microstructure layer 2 and on the surface of the microstructure layer 2.
It can be understood that, when the microstructure layer 2 is disposed on the upper surface of the substrate 1, the anti-reflection layer 3 is disposed on the upper surface of the substrate 1 in the region not covered by the microstructure layer 2 and on the surface of the microstructure layer 2; when the microstructure layer 2 is arranged on the lower surface of the substrate 1, the anti-reflection layer 3 is arranged on the lower surface of the substrate 1 in the area not covered by the microstructure layer 2 and on the surface of the microstructure layer 2; when the microstructure layer 2 is disposed on the upper surface and the lower surface of the substrate 1, the antireflection layer 3 is disposed on the surface of the microstructure layer 2 and the regions of the upper surface and the lower surface of the substrate 1 not covered by the microstructure layer 2.
Materials for antireflective layer 3 include, but are not limited to, silicon, germanium, zinc selenide, chalcogenide glass, quartz glass, PMMA polymer.
It should be noted that the thickness of antireflection layer 3 is not limited in this application, and the specific thickness of antireflection layer 3 may be determined according to the operating wavelength of the antireflection microstructure and the material of antireflection layer 3. For example, when the operating wavelength is in the long-wave infrared band of 8 μm to 14 μm, the thickness of the antireflection layer 3 is 0.1 μm to 10 μm, for example, 0.1 μm, 1 μm, 2 μm, 3 μm, 4 μm, 5 μm, 6 μm, 8 μm, 10 μm, or the like.
The antireflection microstructure in the embodiment is provided with the antireflection layer 3, so that the transmission capability of the antireflection microstructure can be further enhanced.
The antireflective microstructure in the present application is further described in the following in specific cases.
Example 1
Referring to fig. 3, the antireflection microstructure includes a substrate 1 and a microstructure layer 2 disposed on an upper surface of the substrate 1, and the microstructure layer 2 includes three microstructure array layers 21.
The microstructures in each microstructure array layer 21 are cylindrical, the diameter D of the cylinder is 1.835 μm, and the center-to-center distance P between two adjacent microstructures is 2.300 μm. For convenience of description, the microstructure array layer 21 is referred to as a first microstructure array layer, a second microstructure array layer, and a third microstructure array layer, respectively, in a direction gradually away from the substrate 1, and the height H1 of the first microstructure array layer is 1.270 μm, the height H2 of the second microstructure array layer is 0.074 μm, and the height H3 of the third microstructure array layer is 2.040 μm. The microstructure array layer 21 has a square shape.
The material of the first microstructure array layer is elemental germanium, the material of the second microstructure array layer is zinc sulfide, and the material of the third microstructure array layer is ytterbium fluoride; the material of the substrate 1 is simple substance silicon.
The transmittance curve of the antireflection microstructure (multilayer microstructure) in this embodiment and the transmittance curve of the conventional antireflection microstructure (single-layer microstructure) are shown in fig. 5, where the abscissa is the wavelength and the ordinate is the transmittance, and the average transmittance of the antireflection microstructure in this embodiment can reach 98.8% in the long-wave infrared band of 8 μm to 14 μm, which is much higher than the average transmittance of 94.6% of the conventional antireflection microstructure.
That is, when an antireflection microstructure is disposed on one of the incident surface and the exit surface of the window of the optical device, the transmission capacity of the window is 94.6% when the conventional antireflection microstructure is used, and the transmission capacity of the window can reach 98.8% when the antireflection microstructure is used in the present embodiment; when the incident surface and the exit surface of the window of the optical device are both provided with the antireflection microstructure, the comprehensive transmission capacity of the window using the traditional antireflection microstructure is 89.5%, while the comprehensive transmission capacity of the window using the antireflection microstructure of the embodiment can reach 97.6%, and the transmission rate can be improved by 8 points.
Example 2
Referring to fig. 4, the antireflection microstructure includes a substrate 1, a microstructure layer 2 disposed on an upper surface of the substrate 1, and an antireflection layer 3 disposed on an area of the upper surface of the substrate 1 not covered by the microstructure layer 2 and on a surface of the microstructure layer 2, where the microstructure layer 2 includes two microstructure array layers 21.
The microstructures in each microstructure array layer 21 are cylindrical, the diameter D of the cylinder is 1.835 μm, and the center-to-center distance P between two adjacent microstructures is 2.300 μm. For convenience of description, the microstructure array layer 21 is referred to as a first microstructure array layer and a second microstructure array layer, respectively, in a direction away from the substrate 1, and the height H1 'of the first microstructure array layer is 0.835 μm, and the height H2' of the second microstructure array layer is 1.040 μm; the thickness H of the antireflection layer 3 was 3.075 μm. The microstructure array layer 21 has a square shape.
The substrate 1 is made of simple substance silicon, the first microstructure array layer is made of simple substance germanium, the second microstructure array layer is made of simple substance silicon, and the anti-reflection layer 3 is made of zinc sulfide.
The transmittance curve of the antireflection microstructure in this embodiment and the transmittance curve of the conventional antireflection microstructure are shown in fig. 6, where the abscissa is the wavelength and the ordinate is the transmittance, and the average transmittance of the antireflection microstructure in this embodiment can reach 99.8% in the long-wave infrared band of 8 μm to 14 μm, and the transmittance is further increased. It should be noted that the reason why the average transmittance of the antireflection microstructure including two microstructure array layers 21 of the present embodiment is higher than that of the antireflection microstructure including three microstructure array layers 21 of example 1 is that the transmission capability is further increased by providing the antireflection layer 3 in the present embodiment.
When the incident surface and the exit surface of the window of the optical device are both provided with the antireflection microstructure, the comprehensive transmission capacity of the window using the traditional antireflection microstructure is 89.5%, while the comprehensive transmission capacity of the window using the antireflection microstructure of the embodiment can reach 99.6%, almost no reflection exists, and the perfect transmission level is achieved.
The present application further provides a method for manufacturing an anti-reflective microstructure, please refer to fig. 7, which includes:
step S101: a substrate is obtained.
The obtained substrate 1 is shown in FIG. 8.
In order to improve the bonding force between the substrate and the microstructure layer to be processed, the substrate is cleaned, and the cleaning process can be as follows: and (3) putting the substrate into an acetone solution for ultrasonic cleaning for 15min, respectively cleaning the substrate for 15min by using ethanol and deionized water, and drying the substrate by using a nitrogen gun after the substrate is cleaned.
Step S102: depositing a microstructure layer to be processed on the upper surface and/or the lower surface of the substrate, wherein the microstructure layer to be processed comprises at least two microstructure array layers to be processed which are arranged in a stacking mode, and different materials of the microstructure array layers to be processed are different.
Specifically, a microstructure array layer 21 'to be processed is sequentially deposited on the upper surface and/or the lower surface of the substrate 1, for example, when the number of the microstructure array layer to be processed is two, the structural schematic diagram of this step is as shown in fig. 9, and two microstructure array layers 21' to be processed are sequentially deposited in a direction from the upper surface of the substrate 1 to a direction gradually away from the upper surface of the substrate 1; when the number of the microstructure array layers to be processed is three, the schematic structural diagram of this step is shown in fig. 10, and three microstructure array layers to be processed 21' are sequentially deposited in a direction from the upper surface of the substrate 1 to a direction gradually away from the upper surface of the substrate 1.
The microstructure array layer to be processed is deposited by a method including but not limited to electron beam evaporation and magnetron sputtering.
Step S103: and coating photoresist on the surface of the microstructure layer to be processed, which is far away from the substrate, exposing and developing the photoresist to form a patterned mask.
Taking the number of the microstructure array layers to be processed as three layers as an example, the photoresist 4 can be coated by adopting a spin coating method, and as shown in fig. 11, the thickness of the photoresist 4 can be 300 nm-5 μm; a mask is placed on a substrate, a photoresist on the substrate is exposed, so that a pattern on the mask is transferred to the photoresist, and a patterned mask 5 formed after development is shown in fig. 12.
It should be noted that after spin-coating the photoresist and before exposure, the substrate needs to be baked by an electric hot plate, which is "prebaking"; and baking the substrate again after exposure and before development.
And developing by using a developer after baking for 10s to 120s according to different graphic parameters, and repeatedly washing by using deionized water to obtain the required graphical mask. The substrate can now be baked using the hot plate, this being a "post bake".
Step S104: and etching the microstructure layer to be processed according to the graphical mask to form a microstructure layer, wherein the microstructure layer comprises at least two microstructure array layers which are arranged in a stacked mode, and each microstructure array layer comprises a plurality of microstructures.
The etching method may be reactive ion etching or other etching methods, and the three to-be-processed microstructure array layers that are not protected by the patterned mask are removed to obtain the microstructure array layer, please refer to fig. 13.
Step S105: and removing the graphical mask to obtain the antireflection microstructure.
The patterned mask is removed by a resist remover, and the resulting antireflection microstructure is shown in fig. 3.
It should be noted that, after removing the patterned mask by the glue remover, a cleaning step is required, and the specific process may be: and (3) putting the substrate with the microstructure array layer into an acetone solution for ultrasonic cleaning for 15min, and then respectively cleaning for 15min by using ethanol and deionized water. After cleaning, the mixture is dried by a nitrogen gun.
The micro-structure layer that the antireflection micro-structure set up on the basement of preparation includes the micro-structure array layer in this application, the micro-structure array layer includes a plurality of microstructures, the micro-structure array layer can be equivalent to become the film that has gradual change refractive index gradient distribution, realize subtracting the reflection effect, the number of piles on micro-structure array layer is more than two-layer simultaneously, and the material on different micro-structure array layers is different, reduce the sudden change of refractive index, consequently, can reduce to take place fresnel reflection, the reinforcing subtracts reflection of reflection micro-structure, realize better anti-reflection effect.
Referring to fig. 14, the present application further provides another method for manufacturing an anti-reflective microstructure, including:
step S201: a substrate is obtained.
Step S202: depositing a microstructure layer to be processed on the upper surface and/or the lower surface of the substrate, wherein the microstructure layer to be processed comprises at least two laminated microstructure array layers to be processed, and different materials of the microstructure array layers to be processed are different.
Step S203: and coating photoresist on the surface of the microstructure layer to be processed, which is far away from the substrate, exposing and developing the photoresist to form a patterned mask.
Step S204: and etching the microstructure layer to be processed according to the graphical mask to form a microstructure layer, wherein the microstructure layer comprises at least two microstructure array layers which are arranged in a stacked mode, and each microstructure array layer comprises a plurality of microstructures.
Step S205: and removing the patterned mask.
Step S206: and depositing an antireflection layer on the regions of the upper surface and/or the lower surface of the substrate which are not covered by the microstructure layer and the surface of the microstructure layer to obtain the antireflection microstructure.
The anti-reflection layer deposition mode includes but is not limited to magnetron sputtering method and electron beam evaporation method.
Taking the microstructure layer including two stacked microstructure array layers as an example, the antireflection microstructure obtained after depositing the antireflection layer in this step is shown in fig. 4.
Please refer to the above embodiments from step S201 to step S205, except that the number of layers of the microstructure array to be processed is two in this embodiment.
The embodiments are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same or similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
The antireflection microstructure and the manufacturing method thereof provided by the present application are described in detail above. The principles and embodiments of the present application are described herein using specific examples, which are only used to help understand the method and its core idea of the present application. It should be noted that, for those skilled in the art, it is possible to make several improvements and modifications to the present application without departing from the principle of the present application, and such improvements and modifications also fall within the scope of the claims of the present application.
Claims (10)
1. An anti-reflective microstructure, comprising:
a substrate;
the microstructure layer is arranged on the upper surface and/or the lower surface of the substrate and comprises at least two microstructure array layers which are arranged in a stacked mode, each microstructure array layer comprises a plurality of microstructures, and the microstructures in the different microstructure array layers are made of different materials.
2. The anti-reflective microstructure of claim 1, wherein the microstructure array layer has three layers.
3. The antireflection microstructure of claim 1 wherein the microstructure is in the shape of any one of a cylinder, a prism, a truncated cone, a truncated pyramid, a parabolic cone, and a pyramid.
4. The antireflection microstructure of claim 1 wherein each of the microstructure array layers has a shape of any one of a square, a rectangle, a circle, and a polygon including at least five line segments.
5. The anti-reflective microstructure of claim 1, wherein the height of the microstructure layer is between 0.1 μ ι η and 50 μ ι η.
6. The antireflection microstructure of claim 1 wherein the center-to-center spacing of adjacent microstructures in the microstructure array layer is between 0.1 μ ι η and 50 μ ι η.
7. The antireflection microstructure of any one of claims 1 to 6 further comprising:
and the anti-reflection layer is arranged in the area which is not covered by the micro-structural layer on the upper surface and/or the lower surface of the substrate and on the surface of the micro-structural layer.
8. The antireflection microstructure of claim 7 wherein the antireflective layer has a thickness of between 0.1 μ ι η and 10 μ ι η.
9. A method for manufacturing an antireflection microstructure is characterized by comprising the following steps:
obtaining a substrate;
depositing a microstructure layer to be processed on the upper surface and/or the lower surface of the substrate, wherein the microstructure layer to be processed comprises at least two microstructure array layers to be processed which are arranged in a stacked manner, and different materials of the microstructure array layers to be processed are different;
coating photoresist on the surface of the microstructure layer to be processed, which is far away from the substrate, exposing and developing the photoresist to form a patterned mask;
etching the microstructure layer to be processed according to the graphical mask to form a microstructure layer, wherein the microstructure layer comprises at least two microstructure array layers which are arranged in a stacked mode, and each microstructure array layer comprises a plurality of microstructures;
and removing the graphical mask to obtain the antireflection microstructure.
10. The method of claim 9, wherein after removing the patterned mask, the method further comprises:
and depositing an antireflection layer on the upper surface and/or the lower surface of the substrate in the area not covered by the microstructure layer and the surface of the microstructure layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210674293.6A CN115016048B (en) | 2022-06-15 | 2022-06-15 | Anti-reflection microstructure and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210674293.6A CN115016048B (en) | 2022-06-15 | 2022-06-15 | Anti-reflection microstructure and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115016048A true CN115016048A (en) | 2022-09-06 |
| CN115016048B CN115016048B (en) | 2024-02-27 |
Family
ID=83074590
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210674293.6A Active CN115016048B (en) | 2022-06-15 | 2022-06-15 | Anti-reflection microstructure and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115016048B (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100157609A1 (en) * | 2008-12-24 | 2010-06-24 | Wu Yii-Der | Brightness enhancement film |
| WO2011162165A1 (en) * | 2010-06-23 | 2011-12-29 | シャープ株式会社 | Method for manufacturing light-diffusing film, light-diffusing film manufactured by the method, and display device provided with the light-diffusing film |
| TW201505139A (en) * | 2013-07-29 | 2015-02-01 | Nat Applied Res Laboratories | Conductive microstructure array and fabricating method thereof |
| CN104777544A (en) * | 2015-04-29 | 2015-07-15 | 深圳市华星光电技术有限公司 | Polarizer and preparation method and liquid crystal display panel thereof |
| US20190369294A1 (en) * | 2018-05-29 | 2019-12-05 | North Carolina State University | Enhancing optical transmission of multlayer composites with interfacial nanostructures |
| CN112271221A (en) * | 2020-10-13 | 2021-01-26 | 常熟理工学院 | Three-layer silicon nitride anti-reflection layer with microstructure and preparation method thereof |
| CN114488362A (en) * | 2022-01-19 | 2022-05-13 | 中国科学院上海光学精密机械研究所 | Sapphire window with double-sided anti-reflection microstructure and preparation method thereof |
-
2022
- 2022-06-15 CN CN202210674293.6A patent/CN115016048B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100157609A1 (en) * | 2008-12-24 | 2010-06-24 | Wu Yii-Der | Brightness enhancement film |
| WO2011162165A1 (en) * | 2010-06-23 | 2011-12-29 | シャープ株式会社 | Method for manufacturing light-diffusing film, light-diffusing film manufactured by the method, and display device provided with the light-diffusing film |
| TW201505139A (en) * | 2013-07-29 | 2015-02-01 | Nat Applied Res Laboratories | Conductive microstructure array and fabricating method thereof |
| CN104777544A (en) * | 2015-04-29 | 2015-07-15 | 深圳市华星光电技术有限公司 | Polarizer and preparation method and liquid crystal display panel thereof |
| US20190369294A1 (en) * | 2018-05-29 | 2019-12-05 | North Carolina State University | Enhancing optical transmission of multlayer composites with interfacial nanostructures |
| CN112271221A (en) * | 2020-10-13 | 2021-01-26 | 常熟理工学院 | Three-layer silicon nitride anti-reflection layer with microstructure and preparation method thereof |
| CN114488362A (en) * | 2022-01-19 | 2022-05-13 | 中国科学院上海光学精密机械研究所 | Sapphire window with double-sided anti-reflection microstructure and preparation method thereof |
Non-Patent Citations (2)
| Title |
|---|
| 王威;沈鸿烈;吕红杰;岳之浩;: "多孔复合微结构的制备与减反射性能", 南京航空航天大学学报, no. 01, pages 147 - 151 * |
| 王威;沈鸿烈;吕红杰;岳之浩;: "多层纳米微结构的制备与陷光机理研究", 电子器件, no. 01, pages 1 - 4 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115016048B (en) | 2024-02-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Sanchez-Sobrado et al. | Colloidal-lithographed TiO 2 photonic nanostructures for solar cell light trapping | |
| US6794119B2 (en) | Method for fabricating a structure for a microelectromechanical systems (MEMS) device | |
| US7368779B2 (en) | Hemi-spherical structure and method for fabricating the same | |
| US20100116332A1 (en) | Transparent substrate provided with an improved electrode layer | |
| JP5963469B2 (en) | Transmission type diffractive optical element, transmission type laminated diffractive optical element, and manufacturing method thereof | |
| JP5756510B2 (en) | Manufacturing method using dry etching of glass substrate with uneven structure film, glass substrate with uneven structure film, solar cell, and manufacturing method of solar cell | |
| TWI564585B (en) | Anti reflection substrate structure and manufacturing method thereof | |
| US11681078B2 (en) | Structure having low reflectance surface and method for manufacturing the structure, and solar cell and optical film having the structure | |
| CN115016048B (en) | Anti-reflection microstructure and manufacturing method thereof | |
| TW202046449A (en) | Patterning of multi-depth optical devices | |
| CN111025463A (en) | Three-dimensional integrated super-surface device, and preparation method and application thereof | |
| KR100672702B1 (en) | CMOS Image sensor and Method for fabricating of the same | |
| TWI756046B (en) | Image sensing device | |
| JP2003332604A (en) | Photoelectric conversion element having reflection preventing layer and manufacture method therefor | |
| US20060012880A1 (en) | Optical device with refractive and diffractive properties | |
| US20190044004A1 (en) | Packaging glass with hierarchically nanostructured surface | |
| CN218917690U (en) | Antireflection lens and imaging device | |
| EP3499573B1 (en) | Method for manufacturing a microlens | |
| US20040052946A1 (en) | Method for producing a tool which can be used to create surface structures in the sub-mum range | |
| CN218975456U (en) | Semiconductor device with a semiconductor layer having a plurality of semiconductor layers | |
| KR20090130717A (en) | Fabricating methode of coating film for microlens and the same | |
| CN210720787U (en) | Shading space ring, imaging lens group and camera device | |
| CN117991442A (en) | Grating coupler and manufacturing method thereof | |
| Choi et al. | Fabrication of ultra high aspect ratio silica nanocone arrays by multiple shrinking mask etching | |
| CN106415328B (en) | Method for producing nanostructures in a transparent substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |