CN114999900A - Method for prolonging service life of minority carrier in silicon carbide wafer - Google Patents
Method for prolonging service life of minority carrier in silicon carbide wafer Download PDFInfo
- Publication number
- CN114999900A CN114999900A CN202210839289.0A CN202210839289A CN114999900A CN 114999900 A CN114999900 A CN 114999900A CN 202210839289 A CN202210839289 A CN 202210839289A CN 114999900 A CN114999900 A CN 114999900A
- Authority
- CN
- China
- Prior art keywords
- amorphous silicon
- silicon carbide
- carbide wafer
- thin film
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 144
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 144
- 238000000034 method Methods 0.000 title claims abstract description 53
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 114
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 32
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 31
- 230000007547 defect Effects 0.000 claims abstract description 25
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 25
- 239000000969 carrier Substances 0.000 claims abstract description 12
- 239000010408 film Substances 0.000 claims description 69
- 239000010409 thin film Substances 0.000 claims description 60
- 239000010410 layer Substances 0.000 claims description 33
- 238000000151 deposition Methods 0.000 claims description 23
- 230000008021 deposition Effects 0.000 claims description 20
- 239000001257 hydrogen Substances 0.000 claims description 20
- 229910052739 hydrogen Inorganic materials 0.000 claims description 20
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 18
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 17
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 238000002161 passivation Methods 0.000 claims description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 6
- 230000007935 neutral effect Effects 0.000 claims description 6
- 229910000077 silane Inorganic materials 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 239000012495 reaction gas Substances 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 3
- 238000002791 soaking Methods 0.000 claims description 3
- 230000002035 prolonged effect Effects 0.000 abstract description 8
- 239000013078 crystal Substances 0.000 description 6
- 238000005406 washing Methods 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000003344 environmental pollutant Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 231100000719 pollutant Toxicity 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/045—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide passivating silicon carbide surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- High Energy & Nuclear Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention relates to the technical field of silicon carbide, and discloses a method for prolonging the service life of minority carriers in a silicon carbide wafer, wherein the surface service life of the silicon carbide wafer is prolonged by passivating the carbon vacancy defects on the surface of the silicon carbide wafer through hydrogen atoms escaping from an amorphous silicon film; and then, the number of hydrogen atoms escaping from the amorphous silicon film into the silicon carbide wafer is increased by carrying out laser irradiation on the amorphous silicon film, and the hydrogen atoms passivate carbon vacancy defects inside the silicon carbide wafer, so that the service life of the silicon carbide wafer is prolonged, and finally, the service life of minority carriers in the silicon carbide wafer is prolonged by prolonging the surface life and the body life of the silicon carbide wafer.
Description
Technical Field
The invention relates to the technical field of silicon carbide, in particular to a method for prolonging the service life of minority carriers in a silicon carbide wafer.
Background
The equivalent minority carrier lifetime of a silicon carbide wafer is an important parameter in measuring the quality of a silicon carbide wafer, and can be measured in a non-destructive, non-contact manner, typically by microwave techniques.
The equivalent minority carrier lifetime of a silicon carbide wafer consists of two parts, one is the bulk lifetime of a silicon carbide wafer and one is the surface lifetime of a silicon carbide wafer. According to the current research, the equivalent minority carrier lifetime of the silicon carbide is determined by the concentration of the carbon vacancy defects in the silicon carbide wafer to a great extent, so an effective method is found to reduce or passivate the carbon vacancy defects, and the quality of the silicon carbide wafer can be obviously improved; where carbon vacancies are point defects in the crystal lattice that lack one carbon atom.
The traditional method for improving the equivalent minority carrier lifetime in a silicon carbide wafer is to generate interstitial carbon atoms at the interface of silicon carbide and silicon oxide by a thermal oxidation method and then eliminate the defect of carbon vacancy by utilizing the diffusion of the interstitial atoms. The method needs longer thermal oxidation time, consumes more energy, generates less interstitial carbon atoms, can eliminate a smaller proportion of carbon vacancies and has not good enough effect.
Disclosure of Invention
The invention aims to solve the problem that the traditional method for prolonging the service life of a silicon carbide wafer body has poor effect, and provides a method for prolonging the service life of minority carriers in a silicon carbide wafer.
In order to achieve the above object, the present invention provides a method for improving the minority carrier lifetime in a silicon carbide wafer, comprising the steps of:
providing a silicon carbide wafer, forming an amorphous silicon film on one side surface of the silicon carbide wafer, wherein the amorphous silicon film is bonded with a dangling bond on the corresponding surface of the silicon carbide wafer to passivate a carbon vacancy defect on the corresponding surface of the silicon carbide wafer;
performing laser irradiation on the amorphous silicon thin film to increase the number of hydrogen atoms which escape from the amorphous silicon thin film into the silicon carbide wafer, wherein the hydrogen atoms passivate carbon vacancy defects inside the silicon carbide wafer, and in the process of performing laser irradiation on the amorphous silicon thin film, the laser can also be irradiated into the silicon carbide wafer to increase the number of minority carriers in the silicon carbide wafer, so that the position of a Fermi energy level in the silicon carbide wafer is changed, the number of electrically neutral hydrogen atoms in the silicon carbide wafer is increased, and the passivation of the carbon vacancy defects inside the silicon carbide wafer is improved;
and removing the amorphous silicon film.
As an implementation mode, the intensity range of the laser is 6000-10000W/m 2 The time range of laser irradiation is 5-10 minutes.
As an implementation mode, the method for forming the amorphous silicon thin film on one side surface of the silicon carbide wafer is a PECVD deposited thin film method.
As one possible implementation manner, the process of forming a corresponding amorphous silicon thin film on one side surface of the silicon carbide wafer based on the PECVD deposited thin film method includes annealing, and during the annealing, hydrogen atoms in the amorphous silicon thin film escape to the corresponding surface of the silicon carbide wafer to passivate carbon vacancy defects on the corresponding surface of the silicon carbide wafer, thereby improving the lifetime of the surface of the silicon carbide wafer.
As one possible embodiment, the process of forming an amorphous silicon thin film on one side surface of the silicon carbide wafer by a PECVD deposition thin film method includes:
and putting the silicon carbide wafer into a PECVD chamber for reaction, introducing hydrogen and silane serving as reaction gas sources into the PECVD chamber, and forming an amorphous silicon film on the surface of one side of the silicon carbide wafer.
As an implementable manner, the conditions for growing the amorphous silicon thin film are: the deposition temperature is set at 200 ℃, the pressure is 0.5mbar, the flow rate of hydrogen is 150sccm, the flow rate of silane is 15sccm, and the deposition time is 40min, so that the amorphous silicon film with the required thickness is obtained.
As an implementation mode, the thickness of the amorphous silicon thin film ranges from 50 nm to 100 nm.
As an embodiment, the amorphous silicon thin film is a single-layer thin film or a double-layer thin film; when the amorphous silicon film is a double-layer film, the amorphous silicon film comprises a first layer of amorphous silicon film positioned on the surface of the silicon carbide wafer and a second layer of amorphous silicon film positioned on the surface of the first layer of amorphous silicon film, wherein the density of the first layer of amorphous silicon film is smaller than that of the second layer of amorphous silicon film, so that the hydrogen content of the first layer of amorphous silicon film is larger than that of the second layer of amorphous silicon film.
As an implementation mode, the deposition temperature range of the first amorphous silicon thin film is 150-200 ℃, and the deposition temperature range of the first amorphous silicon thin film is 200-250 ℃.
As an embodiment, the step of removing the amorphous silicon thin film includes: and soaking the silicon carbide wafer with the amorphous silicon thin film into a sodium hydroxide solution, thereby removing the amorphous silicon thin film on the silicon carbide wafer.
As an embodiment, the step of providing a silicon carbide wafer comprises:
generating a silicon carbide crystal ingot by using a PVT (physical vapor transport) method, and cutting the silicon carbide crystal ingot to obtain a wafer;
and removing pollutants on the surface of the wafer by adopting an RCA standard cleaning method, then washing, and drying to obtain the silicon carbide wafer.
The invention has the beneficial effects that: the invention provides a method for prolonging the service life of minority carriers in a silicon carbide wafer, which is characterized in that an amorphous silicon film is formed on the surface of one side of the surface of the silicon carbide wafer, and the carbon vacancy defects on the surface of the silicon carbide wafer are passivated by hydrogen atoms escaping from the amorphous silicon film, so that the surface service life of the silicon carbide wafer is prolonged; and then, the number of hydrogen atoms escaping from the amorphous silicon film into the silicon carbide wafer is increased by carrying out laser irradiation on the amorphous silicon film, and the hydrogen atoms passivate carbon vacancy defects inside the silicon carbide wafer, so that the service life of the silicon carbide wafer is prolonged, and finally, the service life of minority carriers in the silicon carbide wafer is prolonged by prolonging the surface life and the body life of the silicon carbide wafer.
Drawings
FIG. 1 is a schematic diagram of the steps of a method for increasing minority carrier lifetime in a SiC wafer according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, the present embodiment provides a technical solution: a method of increasing minority carrier lifetime in a silicon carbide wafer, comprising the steps of:
step S100: providing a silicon carbide wafer, forming an amorphous silicon film on one side surface of the silicon carbide wafer, wherein the amorphous silicon film is bonded with a dangling bond on the corresponding surface of the silicon carbide wafer to passivate a carbon vacancy defect on the corresponding surface of the silicon carbide wafer;
step S200: performing laser irradiation on the amorphous silicon thin film to increase the number of hydrogen atoms which escape from the amorphous silicon thin film into the silicon carbide wafer, wherein the hydrogen atoms passivate carbon vacancy defects inside the silicon carbide wafer, and in the process of performing laser irradiation on the amorphous silicon thin film, the laser can also be irradiated into the silicon carbide wafer to increase the number of minority carriers in the silicon carbide wafer, so that the position of a Fermi energy level in the silicon carbide wafer is changed, the number of electrically neutral hydrogen atoms in the silicon carbide wafer is increased, and the passivation of the carbon vacancy defects inside the silicon carbide wafer is improved;
step S300: and removing the amorphous silicon film.
Step S100 is executed, and the specific steps of providing the silicon carbide wafer include:
generating a silicon carbide crystal ingot by using a PVT (physical vapor transport) method, and cutting the silicon carbide crystal ingot to obtain a wafer;
and removing pollutants on the surface of the wafer by adopting an RCA standard cleaning method, then washing, and drying to obtain the silicon carbide wafer.
Specifically, the technology for cutting the silicon carbide crystal ingot to obtain the wafer is a mortar slicing technology, and the method for drying after washing is specifically to blow dry with nitrogen after repeatedly washing with deionized water.
According to the embodiment of the invention, the amorphous silicon film is grown on the surface of the silicon carbide wafer to passivate the surface of the silicon carbide wafer, and the lattice constant of the amorphous silicon film is relatively close to that of the silicon carbide wafer, so that the amorphous silicon film can form a bond with a dangling bond on the surface of the silicon carbide wafer well, and the defect of carbon vacancy, namely the defect of carbon vacancy on the surface of the passivated silicon carbide wafer, is eliminated, thereby prolonging the service life of the surface of the silicon carbide wafer.
The method for forming the amorphous silicon film on the surface of one side of the surface of the silicon carbide wafer is a PECVD film deposition method, and the amorphous silicon formed by the PECVD film deposition method has high hydrogen content and higher deposition speed.
The process of forming the corresponding amorphous silicon film on the surface of one side of the silicon carbide wafer based on the PECVD deposition film method comprises annealing, and in the annealing process, hydrogen atoms in the amorphous silicon film escape to the surface corresponding to the silicon carbide wafer to passivate carbon vacancy defects on the surface corresponding to the silicon carbide wafer, so that the service life of the surface of the silicon carbide wafer is prolonged.
Specifically, the process of forming the amorphous silicon thin film on the surface of one side of the silicon carbide wafer by the PECVD deposition thin film method includes:
and putting the silicon carbide wafer into a PECVD chamber for reaction, introducing hydrogen and silane serving as reaction gas sources into the PECVD chamber, and forming an amorphous silicon film on the surface of one side of the silicon carbide wafer.
The conditions for growing the amorphous silicon film in the PECVD chamber are as follows: setting the deposition temperature at 200 ℃, and depositing for corresponding time under the preset reaction chamber pressure and gas flow to obtain the amorphous silicon film with the required thickness; specifically, the deposition temperature can be set at 200 ℃, the pressure is 0.5mbar, the flow rate of hydrogen is 150sccm, the flow rate of silane is 15sccm, and the deposition time is 40min, so as to obtain the amorphous silicon thin film with the required thickness.
The thickness range of the amorphous silicon film can be 50-100nm, so that enough hydrogen in the amorphous silicon film can passivate the surface of the silicon carbide wafer, and the time is not consumed too much.
Further, the amorphous silicon film is a single-layer film or a double-layer film; when the amorphous silicon thin film is a double-layer thin film, the amorphous silicon thin film comprises a first layer of amorphous silicon thin film positioned on the surface of the silicon carbide wafer and a second layer of amorphous silicon thin film positioned on the surface of the first layer of amorphous silicon thin film, wherein the density of the first layer of amorphous silicon thin film is smaller than that of the second layer of amorphous silicon thin film, so that the hydrogen content of the first layer of amorphous silicon thin film is larger than that of the second layer of amorphous silicon thin film; the hydrogen content of the first layer of amorphous silicon film is high, so that the first layer of amorphous silicon film can better passivate the surface of the silicon carbide wafer; the second layer of amorphous silicon film has high density, so that the overflow of hydrogen in the first layer of amorphous silicon film can be prevented, and the better passivation effect on the surface of the silicon carbide wafer is realized.
The deposition temperature range of the first amorphous silicon film is 150-200 ℃, the deposition temperature range of the first amorphous silicon film is 200-250 ℃, and other conditions can be the same.
Step S200 is executed, the intensity range of the laser is 6000-10000W/m 2 The laser irradiation time range is 5-10 minutes, so that the number of hydrogen atoms in the amorphous silicon film can be better excited, more hydrogen atoms escape into the silicon carbide wafer to passivate carbon vacancy defects inside the silicon carbide wafer, and the service life of the silicon carbide wafer is prolonged.
In the process of irradiating the amorphous silicon thin film with the laser, the laser can also irradiate the silicon carbide wafer, so that the number of minority carriers in the silicon carbide wafer is increased, the position of a Fermi level in the silicon carbide wafer is changed, the number of electrically neutral hydrogen atoms in the silicon carbide wafer is increased, and the hydrogen atoms passivate carbon vacancy defects inside the silicon carbide wafer, namely, the passivation of the carbon vacancy defects inside the silicon carbide wafer is improved.
Specifically, the amorphous silicon film is in a thermodynamically metastable state, and generally has a structure containing weaker hydrogen bonds, if a layer of amorphous silicon film is deposited on the silicon carbide wafer, the amorphous silicon film is heated by laser, so that the hydrogen bonds in the amorphous silicon film can be broken, and hydrogen atoms in the amorphous silicon film can be fully released into the silicon carbide wafer; in addition, laser can also irradiate the silicon carbide wafer, so that a large number of minority carriers can be generated in the silicon carbide wafer, the position of a Fermi energy level in the silicon carbide wafer is changed, the distribution of a charged state of hydrogen in the silicon carbide wafer is also changed correspondingly along with the change of the position of the Fermi energy level, namely, the number of a large number of electrically neutral hydrogen atoms is increased, and the passivation of carbon vacancies is enhanced. At the same time, the laser also heats the silicon carbide wafer, which also creates conditions for hydrogen passivating the carbon vacancies. Therefore, the method can effectively passivate carbon vacancies in the silicon carbide wafer and improve the quality of the silicon carbide wafer. In addition, the cost of the amorphous silicon film is low, so that the method has high cost performance and is beneficial to industrial popularization.
Executing step S300, wherein the step of removing the amorphous silicon thin film comprises the following steps: and soaking the silicon carbide wafer with the amorphous silicon thin film into a sodium hydroxide solution, thereby removing the amorphous silicon thin film on the silicon carbide wafer.
According to the method for prolonging the service life of minority carriers in the silicon carbide wafer, the proportion of neutral hydrogen atoms in the silicon carbide wafer and the amorphous silicon film is effectively adjusted through laser, so that the carbon vacancy passivation is facilitated; meanwhile, the amorphous silicon film is a source of hydrogen and a barrier layer for hydrogen overflow, so that high concentration of hydrogen in the silicon carbide wafer can be maintained, and passivation of carbon vacancies is further improved.
Although the present invention has been described with reference to the preferred embodiments, it is not intended to limit the present invention, and those skilled in the art can make possible variations and modifications of the present invention using the method and the technical contents disclosed above without departing from the spirit and scope of the present invention.
Claims (10)
1. A method of increasing minority carrier lifetime in a silicon carbide wafer, comprising the steps of:
providing a silicon carbide wafer, forming an amorphous silicon film on the surface of one side of the silicon carbide wafer, bonding the amorphous silicon film and the dangling bonds on the corresponding surface of the silicon carbide wafer, and passivating the carbon vacancy defects on the corresponding surface of the silicon carbide wafer;
performing laser irradiation on the amorphous silicon thin film to increase the number of hydrogen atoms which escape from the amorphous silicon thin film into the silicon carbide wafer, wherein the hydrogen atoms passivate carbon vacancy defects inside the silicon carbide wafer, and in the process of performing laser irradiation on the amorphous silicon thin film, the laser can also be irradiated into the silicon carbide wafer to increase the number of minority carriers in the silicon carbide wafer, so that the position of a Fermi energy level in the silicon carbide wafer is changed, the number of electrically neutral hydrogen atoms in the silicon carbide wafer is increased, and the passivation of the carbon vacancy defects inside the silicon carbide wafer is improved;
and removing the amorphous silicon film.
2. The method as set forth in claim 1, wherein the laser has an intensity in the range of 6000-10000W/m 2 The time range of laser irradiation is 5-10 minutes.
3. The method according to claim 1, wherein the method for forming the amorphous silicon thin film on the surface of the silicon carbide wafer is a PECVD deposition thin film method.
4. The method for improving the minority carrier lifetime in the SiC wafer according to claim 3, wherein the step of forming a corresponding amorphous silicon thin film on one side surface of the SiC wafer based on the PECVD deposition thin film method comprises annealing, and during the annealing, hydrogen atoms in the amorphous silicon thin film escape to the corresponding surface of the SiC wafer to passivate carbon vacancy defects on the corresponding surface of the SiC wafer, thereby improving the lifetime of the surface of the SiC wafer.
5. The method of claim 3, wherein the step of forming the amorphous silicon thin film on the surface of one side of the SiC wafer by PECVD deposition of the thin film comprises:
and putting the silicon carbide wafer into a PECVD chamber for reaction, introducing hydrogen and silane serving as reaction gas sources into the PECVD chamber, and forming an amorphous silicon film on the surface of one side of the silicon carbide wafer.
6. The method of claim 5, wherein the conditions for growing the amorphous silicon thin film are as follows: the deposition temperature is set at 200 ℃, the pressure is 0.5mbar, the flow rate of hydrogen is 150sccm, the flow rate of silane is 15sccm, and the deposition time is 40min, so that the amorphous silicon film with the required thickness is obtained.
7. The method of claim 1, wherein the amorphous silicon thin film has a thickness in the range of 50-100 nm.
8. The method of claim 1, wherein the amorphous silicon thin film is a single layer thin film or a double layer thin film; when the amorphous silicon film is a double-layer film, the amorphous silicon film comprises a first layer of amorphous silicon film positioned on the surface of the silicon carbide wafer and a second layer of amorphous silicon film positioned on the surface of the first layer of amorphous silicon film, wherein the density of the first layer of amorphous silicon film is smaller than that of the second layer of amorphous silicon film, so that the hydrogen content of the first layer of amorphous silicon film is larger than that of the second layer of amorphous silicon film.
9. The method according to claim 8, wherein the deposition temperature of the first amorphous silicon thin film is in a range of 150 to 200 ℃, and the deposition temperature of the first amorphous silicon thin film is in a range of 200 to 250 ℃.
10. The method of claim 1, wherein the removing the amorphous silicon thin film comprises: and soaking the silicon carbide wafer with the amorphous silicon thin film into a sodium hydroxide solution, so as to remove the amorphous silicon thin film on the silicon carbide wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210839289.0A CN114999900B (en) | 2022-07-18 | 2022-07-18 | Method for prolonging service life of minority carriers in silicon carbide wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210839289.0A CN114999900B (en) | 2022-07-18 | 2022-07-18 | Method for prolonging service life of minority carriers in silicon carbide wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114999900A true CN114999900A (en) | 2022-09-02 |
| CN114999900B CN114999900B (en) | 2023-08-08 |
Family
ID=83022260
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210839289.0A Active CN114999900B (en) | 2022-07-18 | 2022-07-18 | Method for prolonging service life of minority carriers in silicon carbide wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114999900B (en) |
Citations (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6214107B1 (en) * | 1996-04-18 | 2001-04-10 | Matsushita Electric Industrial Co., Ltd. | Method for manufacturing a SiC device |
| CN101114593A (en) * | 2006-07-28 | 2008-01-30 | 财团法人电力中央研究所 | Method for improving the quality of an SiC crystal and SiC semiconductor device |
| CN102560673A (en) * | 2011-12-22 | 2012-07-11 | 瀚天泰成电子科技（厦门）有限公司 | Method for prolonging service life of current carrier of silicon carbide material |
| CN102610661A (en) * | 2011-01-25 | 2012-07-25 | 东方电气集团(宜兴)迈吉太阳能科技有限公司 | Lamination-recombination passive film used for front surface of single-crystalline-silicon solar cell |
| US20140070230A1 (en) * | 2012-09-12 | 2014-03-13 | Cree, Inc. | Using a carbon vacancy reduction material to increase average carrier lifetime in a silicon carbide semiconductor device |
| CN103946985A (en) * | 2011-12-28 | 2014-07-23 | 富士电机株式会社 | Semiconductor device and method for producing semiconductor device |
| US20150064882A1 (en) * | 2011-05-16 | 2015-03-05 | Katsunori Danno | Process for producing semiconductor device and semiconductor device |
| CN107492482A (en) * | 2017-07-18 | 2017-12-19 | 李哲洋 | A kind of method for improving silicon carbide epitaxial layers carrier lifetime |
| WO2018108006A1 (en) * | 2016-12-15 | 2018-06-21 | 中国电子科技集团公司第五十五研究所 | Method for reducing silicon carbide epitaxial basal plane dislocation density |
| CN108461386A (en) * | 2018-03-16 | 2018-08-28 | 三峡大学 | A kind of siliceous quantum dot multilayer film and preparation method thereof |
| CN109449257A (en) * | 2018-05-04 | 2019-03-08 | 中国科学院上海微***与信息技术研究所 | Hydrogenation treatment method and silicon heterojunction solar battery preparation method after noncrystal membrane |
| CN110106550A (en) * | 2019-05-15 | 2019-08-09 | 中国电子科技集团公司第十三研究所 | A kind of preparation method of epitaxial wafer |
| CN110164959A (en) * | 2019-05-15 | 2019-08-23 | 中国电子科技集团公司第十三研究所 | A kind of substrate and epitaxial wafer |
| CN111146075A (en) * | 2019-12-18 | 2020-05-12 | 中国电子科技集团公司第十三研究所 | Method for prolonging service life of silicon carbide epitaxial wafer carrier |
| CN114093765A (en) * | 2022-01-18 | 2022-02-25 | 浙江大学杭州国际科创中心 | Method for prolonging minority carrier lifetime of silicon carbide film |
| CN114188424A (en) * | 2020-09-14 | 2022-03-15 | 泰州隆基乐叶光伏科技有限公司 | Solar cell, production method and cell module |
| CN114242566A (en) * | 2022-01-07 | 2022-03-25 | 中国电子科技集团公司第五十五研究所 | Method for prolonging service life of silicon carbide epitaxial wafer carrier |
| CN114334609A (en) * | 2021-12-16 | 2022-04-12 | 中国电子科技集团公司第五十五研究所 | Method for prolonging service life of minority carrier of silicon carbide epitaxial material |
-
2022
- 2022-07-18 CN CN202210839289.0A patent/CN114999900B/en active Active
Patent Citations (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6214107B1 (en) * | 1996-04-18 | 2001-04-10 | Matsushita Electric Industrial Co., Ltd. | Method for manufacturing a SiC device |
| CN101114593A (en) * | 2006-07-28 | 2008-01-30 | 财团法人电力中央研究所 | Method for improving the quality of an SiC crystal and SiC semiconductor device |
| CN102610661A (en) * | 2011-01-25 | 2012-07-25 | 东方电气集团(宜兴)迈吉太阳能科技有限公司 | Lamination-recombination passive film used for front surface of single-crystalline-silicon solar cell |
| US20150064882A1 (en) * | 2011-05-16 | 2015-03-05 | Katsunori Danno | Process for producing semiconductor device and semiconductor device |
| CN102560673A (en) * | 2011-12-22 | 2012-07-11 | 瀚天泰成电子科技（厦门）有限公司 | Method for prolonging service life of current carrier of silicon carbide material |
| CN103946985A (en) * | 2011-12-28 | 2014-07-23 | 富士电机株式会社 | Semiconductor device and method for producing semiconductor device |
| US20140070230A1 (en) * | 2012-09-12 | 2014-03-13 | Cree, Inc. | Using a carbon vacancy reduction material to increase average carrier lifetime in a silicon carbide semiconductor device |
| WO2018108006A1 (en) * | 2016-12-15 | 2018-06-21 | 中国电子科技集团公司第五十五研究所 | Method for reducing silicon carbide epitaxial basal plane dislocation density |
| CN107492482A (en) * | 2017-07-18 | 2017-12-19 | 李哲洋 | A kind of method for improving silicon carbide epitaxial layers carrier lifetime |
| CN108461386A (en) * | 2018-03-16 | 2018-08-28 | 三峡大学 | A kind of siliceous quantum dot multilayer film and preparation method thereof |
| CN109449257A (en) * | 2018-05-04 | 2019-03-08 | 中国科学院上海微***与信息技术研究所 | Hydrogenation treatment method and silicon heterojunction solar battery preparation method after noncrystal membrane |
| CN110106550A (en) * | 2019-05-15 | 2019-08-09 | 中国电子科技集团公司第十三研究所 | A kind of preparation method of epitaxial wafer |
| CN110164959A (en) * | 2019-05-15 | 2019-08-23 | 中国电子科技集团公司第十三研究所 | A kind of substrate and epitaxial wafer |
| CN111146075A (en) * | 2019-12-18 | 2020-05-12 | 中国电子科技集团公司第十三研究所 | Method for prolonging service life of silicon carbide epitaxial wafer carrier |
| CN114188424A (en) * | 2020-09-14 | 2022-03-15 | 泰州隆基乐叶光伏科技有限公司 | Solar cell, production method and cell module |
| CN114334609A (en) * | 2021-12-16 | 2022-04-12 | 中国电子科技集团公司第五十五研究所 | Method for prolonging service life of minority carrier of silicon carbide epitaxial material |
| CN114242566A (en) * | 2022-01-07 | 2022-03-25 | 中国电子科技集团公司第五十五研究所 | Method for prolonging service life of silicon carbide epitaxial wafer carrier |
| CN114093765A (en) * | 2022-01-18 | 2022-02-25 | 浙江大学杭州国际科创中心 | Method for prolonging minority carrier lifetime of silicon carbide film |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114999900B (en) | 2023-08-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101058735B1 (en) | Solar cell and manufacturing method | |
| US20150013758A1 (en) | Process for treating a heterojunction photovoltaic cell | |
| KR101654691B1 (en) | A method for cleaning the surface of a silicon substrate | |
| WO1995032519A1 (en) | Method for passivating silicon devices at low temperature to achieve low interface state density | |
| JP2014506005A (en) | Heterojunction interface passivation method | |
| Granata et al. | Effect of an in-situ H2 plasma pretreatment on the minority carrier lifetime of a-Si: H (i) passivated crystalline silicon | |
| Kampas | Reactions of atomic hydrogen in the deposition of hydrogenated amorphous silicon by glow discharge and reactive sputtering | |
| CN113206172A (en) | Sliced silicon heterojunction cell, preparation method and solar cell module | |
| CN111668088A (en) | Processing method of silicon carbide substrate | |
| Okamoto et al. | Passivation of defects in nitrogen-doped polycrystalline Cu 2 O thin films by crown-ether cyanide treatment | |
| Ray et al. | Infrared vibrational spectra of hydrogenated amorphous silicon carbide thin films prepared by glow discharge | |
| CN114999900B (en) | Method for prolonging service life of minority carriers in silicon carbide wafer | |
| JPH02260531A (en) | Treatment of silicon surface | |
| Sameshima et al. | Defect reduction in polycrystalline silicon thin films by heat treatment with high-pressure H2O vapor | |
| JPH0851110A (en) | Method for forming insulating film | |
| CN115050637A (en) | Method for prolonging surface life of silicon carbide wafer | |
| JPH071766B2 (en) | Method for manufacturing semiconductor device | |
| JPH08506215A (en) | Microwave excitation method for manufacturing high quality semiconductor materials | |
| JP3325793B2 (en) | Amorphous semiconductor, method for manufacturing the same, and photovoltaic device | |
| Xiao-Yong et al. | Characterized microstructure and electrical properties of hydrogenated nanocrystalline silicon films by Raman and electrical conductivity spectra | |
| JP6415918B2 (en) | Silicon surface passivation method, surface passivated silicon manufacturing method, and solar cell manufacturing method | |
| JP7447786B2 (en) | Method for evaluating carbon concentration of silicon sample, method for evaluating silicon wafer manufacturing process, method for manufacturing silicon wafer, and method for manufacturing silicon single crystal ingot | |
| CN109518278B (en) | Method for enhancing p-type conductive doping of boron nitride film by nitrogen-rich atmosphere | |
| JP7413992B2 (en) | Method for evaluating carbon concentration of silicon sample, method for evaluating silicon wafer manufacturing process, method for manufacturing silicon wafer, and method for manufacturing silicon single crystal ingot | |
| JPS62144370A (en) | Manufacture of photoelectric conversion element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |