CN114995575B - Voltage stabilizing circuit for high-low voltage circuit and control method thereof - Google Patents

Voltage stabilizing circuit for high-low voltage circuit and control method thereof Download PDF

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CN114995575B
CN114995575B CN202210412099.0A CN202210412099A CN114995575B CN 114995575 B CN114995575 B CN 114995575B CN 202210412099 A CN202210412099 A CN 202210412099A CN 114995575 B CN114995575 B CN 114995575B
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voltage
circuit
negative
operational amplifier
switching circuit
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CN114995575A (en
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林立家
朱畅
韦鸿运
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Shenzhen Tiandeyu Technology Co ltd
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Shenzhen Tiandeyu Technology Co ltd
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    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10Regulating voltage or current
    • G05F1/625Regulating voltage or current wherein it is irrelevant whether the variable actually regulated is ac or dc
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)

Abstract

The invention provides a voltage stabilizing circuit for a high-low voltage circuit and a control method thereof. According to the voltage stabilizing circuit for the high-low voltage circuit and the control method thereof, the switching circuit is used for controlling the on-off of the negative pressure generating circuit and the half-voltage structure circuit, the negative power supply end of the half-voltage structure circuit is switched between the grounding and the negative pressure generating circuit, and because the voltage of the negative power supply end of the half-voltage structure circuit is switched, the half-voltage structure circuit has enough voltage to solve the problem that the starting voltage is increased, and the negative pressure generated by the negative pressure generating circuit is not required to be too low, so that excessive power consumption is avoided.

Description

Voltage stabilizing circuit for high-low voltage circuit and control method thereof
Technical Field
The invention relates to the technical field of voltage stabilizing circuits, in particular to a voltage stabilizing circuit for a high-low voltage circuit and a control method thereof.
Background
Products employing high and low voltage regulator circuits are known, such as: electronic shelf labels, electronic papers, etc. The potential is divided into positive potential (VPOS) and negative potential (VNEG), the positive potential and the negative potential are symmetrically changed, and the voltage ranges are +7V to +22V and-7V to-22V respectively. For example, a positive potential changes from 10V to 20V, and a negative potential changes from-10V to-20V. In view of cost, MOS transistors of common process have no double well (dual well) available, which limits the difficulty of circuit design in the prior art.
The existing high-low voltage stabilizing circuits can be roughly divided into a full-voltage architecture and a half-voltage architecture. Regarding the existing full-voltage architecture, because of the large difference between the positive and negative voltages, the power consumption, the large area and the difficulty in design are caused, and special specifications are required for selecting the elements. With respect to the existing half-voltage architecture, the operational amplifier in the voltage stabilizing circuit includes a low voltage N-type transistor (LVNMOS) and a high voltage N-type transistor (HV NMOS) for protection. Since the system is required to operate at + -7V to + -22V, wherein VNEG is the lowest potential of the wafer substrate, and the body of the HVNMOS is connected to VNEG, the body effect is affected by the body effect, so that the turn-on voltage (threshold voltage) of the HVNMOS becomes larger, the voltage across the gate and the source of the HVNMOS may not be enough to overcome the larger turn-on voltage during the operation of the VPOS with lower voltage, resulting in the failure of the circuit to operate normally. Although the circuit positive and negative voltage difference of the half-voltage structure is reduced, the disadvantage of the full-voltage structure can be optimized, when the half-voltage structure operates at a lower voltage, the circuit cannot normally operate due to insufficient voltage crossing between the gate and the source of the transistor.
Disclosure of Invention
The invention aims to provide a voltage stabilizing circuit for a high-low voltage circuit, which solves the problem that the conventional half-voltage structure circuit can not normally operate due to insufficient voltage crossing between a grid electrode and a source electrode of a transistor.
The invention provides a voltage stabilizing circuit for a high-low voltage circuit, which comprises a half-voltage framework circuit, a switching circuit connected with the half-voltage framework circuit and a negative pressure generating circuit connected with the switching circuit;
The half-voltage architecture circuit comprises an operational amplifier, a driving transistor and a feedback voltage dividing resistor;
the operational amplifier comprises a forward input end, a reverse input end, a driving output end, a positive power supply end, a negative power supply end and a wafer substrate end;
The driving transistor comprises a grid electrode, a source electrode, a drain electrode and a body;
the feedback voltage dividing resistor comprises a positive end, a negative end and a feedback end;
The switching circuit comprises a first input end, a second input end, a first output end and a control end;
The first output end of the switching circuit is connected with the negative power supply end of the operational amplifier, the first input end of the switching circuit is grounded, and the second input end of the switching circuit is connected with the negative voltage output end of the negative voltage generating circuit;
The positive power end of the operational amplifier is connected with the source electrode and the body of the driving transistor to a positive potential, the positive input end of the operational amplifier is connected with the feedback end of the feedback voltage dividing resistor, the reverse input end of the operational amplifier is connected to a reference potential, the driving output end of the operational amplifier is connected with the grid electrode of the driving transistor, the wafer substrate end of the operational amplifier is connected to a negative potential, the positive end of the feedback voltage dividing resistor and the drain electrode of the driving transistor are connected to a voltage stabilizing output end, and the negative end of the feedback voltage dividing resistor is grounded;
the control end of the switching circuit is used for switching the first output end to be connected to the first input end or the second input end.
According to the voltage stabilizing circuit for the high-low voltage circuit, the switching circuit is used for controlling the on-off of the negative pressure generating circuit and the half-voltage structure circuit, the negative power supply end of the half-voltage structure circuit is switched between the grounding and the negative pressure generating circuit, and because the voltage of the negative power supply end of the half-voltage structure circuit is switched, the half-voltage structure circuit has enough voltage to solve the problem that the starting voltage is increased, and the negative pressure generated by the negative pressure generating circuit is not required to be too low, so that excessive power consumption is avoided.
Further, the control end of the switching circuit is connected to an external microcontroller, and the switching operation of the switching circuit is controlled by the microcontroller.
Further, the voltage stabilizing circuit further comprises a voltage detecting circuit, wherein the voltage detecting circuit is connected to the positive potential and the control end of the switching circuit, and the voltage detecting circuit is used for detecting the positive potential and controlling the switching operation of the switching circuit;
When the positive potential is judged to be smaller than a preset threshold value, the first output end of the switching circuit is switched to be connected to the second input end; and when the positive potential is judged to be greater than or equal to the preset threshold, the first output end of the switching circuit is switched to be connected to the first input end.
Further, the preset threshold is substantially 11V.
Further, the operational amplifier comprises a low-voltage N-type transistor and a high-voltage N-type transistor connected with the low-voltage N-type transistor;
The body of the low-voltage N-type transistor is connected to the negative power supply end of the operational amplifier, and the body of the high-voltage N-type transistor is connected to the wafer substrate end of the operational amplifier.
Further, the positive potential has a voltage range of 7V to 22V, the negative potential has a voltage range of-7V to-22V, and the negative voltage output terminal of the negative voltage generating circuit has a voltage of substantially-2V.
The invention also provides a circuit control method which is applied to the voltage stabilizing circuit for the high-low voltage circuit, wherein the circuit control method comprises the following steps:
Setting the preset threshold value of the voltage detection circuit;
Applying the positive potential, the negative potential, and the reference potential to the voltage stabilizing circuit for the high-low voltage circuit; and
And controlling the switching operation of the switching circuit according to the voltage level of the positive potential.
Drawings
FIG. 1 is a schematic diagram of a module structure of an LDO voltage stabilizing circuit for a high-low voltage circuit according to a first embodiment of the present invention;
FIG. 2 is a schematic diagram of a circuit structure of the LDO voltage stabilizing circuit for the high and low voltage circuits in FIG. 1;
FIG. 3 is a schematic diagram of a circuit structure of the LDO voltage stabilizing circuit for the high and low voltage circuits in FIG. 2
FIG. 4 is a schematic diagram of a circuit structure of an LDO voltage stabilizing circuit for a high-low voltage circuit according to a second embodiment of the present invention;
FIG. 5 is a flow chart of a control method of the LDO voltage stabilizing circuit for the high and low voltage circuits in FIG. 1;
Description of main reference numerals:
Half-voltage frame circuit 10 Feedback voltage dividing resistor 13 Voltage detecting circuit 40
Operational amplifier 11 Negative voltage generating circuit 20
Driving transistor 12 Switching circuit 30
The invention will be further described in the following detailed description in conjunction with the above-described figures.
Detailed Description
In order that the invention may be readily understood, a more complete description of the invention will be rendered by reference to the appended drawings. Several embodiments of the invention are shown in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It will be understood that when an element is referred to as being "mounted" on another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and the like are used herein for illustrative purposes only.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
Referring to fig. 1 to 3, a voltage stabilizing circuit for high and low voltage circuits according to a first embodiment of the present invention includes a half-voltage architecture circuit 10, a switching circuit 20 connected to the half-voltage architecture circuit 10, and a negative voltage generating circuit 30 connected to the switching circuit 20;
The half-voltage architecture circuit 10 comprises an operational amplifier 11, a driving transistor 12 and a feedback voltage dividing resistor 13;
the operational amplifier 11 includes a forward input terminal, a reverse input terminal, a driving output terminal, a positive power terminal, a negative power terminal, and a wafer substrate terminal;
the drive transistor 12 includes a gate, a source, a drain, and a body;
the feedback voltage dividing resistor 13 comprises a positive end, a negative end and a feedback end;
The switching circuit 20 includes a first input terminal, a second input terminal, a first output terminal, and a control terminal;
The first output terminal of the switching circuit 20 is connected to the negative power supply terminal (VOPNS) of the operational amplifier 11, the first input terminal of the switching circuit 20 is grounded (VSS), and the second input terminal of the switching circuit 20 is connected to the negative voltage output terminal (VN) of the negative voltage generating circuit 30;
The positive power supply terminal of the operational amplifier 11 is connected to a positive potential (VPOS) with the source and the body of the driving transistor 12, the positive input terminal of the operational amplifier 11 is connected to the feedback terminal of the feedback voltage dividing resistor 13, the negative input terminal of the operational amplifier 11 is connected to a reference potential (VREF), the driving output terminal of the operational amplifier 11 is connected to the gate of the driving transistor 12, the die substrate terminal of the operational amplifier 11 is connected to a negative potential (VNEG), the positive terminal of the feedback voltage dividing resistor 13 and the drain of the driving transistor 12 are connected to a regulated output terminal (VOUT), and the negative terminal of the feedback voltage dividing resistor 13 is grounded (VSS);
wherein the control terminal of the switching circuit 20 is configured to switch the first output terminal to be connected to the first input terminal or to be connected to the second input terminal.
In the above-mentioned voltage stabilizing circuit for high-low voltage circuit, the switching circuit 20 controls the on-off of the negative voltage generating circuit 30 and the half-voltage constructing circuit 10, and the negative power supply end of the half-voltage constructing circuit 10 is switched between the ground and the negative voltage generating circuit 30, and the voltage of the negative power supply end of the half-voltage constructing circuit 10 is switched, so that the problem of the increase of the starting voltage of the transistor can be solved.
Specifically, when the operating voltage of the voltage stabilizing circuit is smaller than a preset threshold, the voltage switching operation of the invention can increase the voltage across the gate and the source of the high-voltage N-type transistor of the operational amplifier 11, and can decrease the voltage across the source and the body of the high-voltage N-type transistor of the operational amplifier 11, so that the problem of increasing the starting voltage can be overcome. On the other hand, the negative voltage generated by the negative voltage generating circuit 30 is not required to be too low, so that excessive power consumption can be avoided.
Referring to fig. 2, in one embodiment of the present invention, the voltage stabilizing circuit for high and low voltage further includes a voltage detecting circuit 40, the voltage detecting circuit 40 is connected to the positive potential and to the control terminal of the switching circuit 20, and the voltage detecting circuit 40 is configured to detect the positive potential and control the switching operation of the switching circuit 20;
When the positive potential is determined to be less than a preset threshold, the first output terminal of the switching circuit 20 is switched to be connected to the second input terminal; when the positive potential is determined to be equal to or greater than the preset threshold, the first output terminal of the switching circuit 20 is switched to be connected to the first input terminal.
In the embodiment of the present invention, the preset threshold is substantially 11V, and in a specific implementation process, the magnitude of the preset threshold may be adjusted according to an actual situation.
In one embodiment of the present invention, the operational amplifier 11 includes a low voltage N-type transistor, and a high voltage N-type transistor connected to the low voltage N-type transistor;
Wherein the body of the low voltage N-type transistor is connected to the negative power supply terminal of the operational amplifier 11, and the body of the high voltage N-type transistor is connected to the wafer substrate terminal of the operational amplifier 11.
The voltage range of the positive potential is 7V to 22V, the voltage range of the negative potential is-7V to-22V, and the voltage at the negative voltage output terminal of the negative voltage generating circuit 30 is substantially-2V.
Referring to fig. 4, in another embodiment of the present invention, the control terminal of the switching circuit 20 may be connected to an external microcontroller, and the switching operation of the switching circuit 20 is controlled by the microcontroller.
Referring to fig. 5, a third embodiment of the present invention provides a circuit control method applied to the voltage stabilizing circuit for high and low voltage circuits according to any of the above embodiments, where the circuit control method includes steps S01 to S03.
Step S01, setting the preset threshold value of the voltage detection circuit;
Step S02 of applying the positive potential, the negative potential, and the reference potential to the voltage stabilizing circuit for high-low voltage circuit; and
Step S03, controlling the switching operation of the switching circuit 20 according to the voltage level of the positive potential.
When the positive potential is determined to be less than a preset threshold, the first output terminal of the switching circuit 20 is switched to be connected to the second input terminal; when the positive potential is determined to be equal to or greater than the preset threshold, the first output terminal of the switching circuit 20 is switched to be connected to the first input terminal.
In the control method of the voltage stabilizing circuit for the high-low voltage circuit, the switching circuit 20 controls the on-off of the negative voltage generating circuit 30 and the half-voltage structure circuit 10, and the negative power supply end of the half-voltage structure circuit 10 is switched between the ground and the negative voltage generating circuit 30, so that the problem that the starting voltage of the transistor is increased can be solved because the voltage of the negative power supply end of the half-voltage structure circuit 10 is switched.
Specifically, when the operating voltage of the voltage stabilizing circuit is smaller than a preset threshold, the voltage switching operation of the invention can increase the voltage across the gate and the source of the high-voltage N-type transistor of the operational amplifier 11, and can decrease the voltage across the source and the body of the high-voltage N-type transistor of the operational amplifier 11, so that the problem of increasing the starting voltage can be overcome. On the other hand, the negative voltage generated by the negative voltage generating circuit 30 is not required to be too low, so that excessive power consumption can be avoided.
The foregoing examples illustrate only a few embodiments of the invention and are described in detail herein without thereby limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.

Claims (7)

1. The voltage stabilizing circuit for the high-low voltage circuit is characterized by comprising a half-voltage framework circuit, a switching circuit connected with the half-voltage framework circuit and a negative pressure generating circuit connected with the switching circuit;
The half-voltage architecture circuit comprises an operational amplifier, a driving transistor and a feedback voltage dividing resistor;
the operational amplifier comprises a forward input end, a reverse input end, a driving output end, a positive power supply end, a negative power supply end and a wafer substrate end;
The driving transistor comprises a grid electrode, a source electrode, a drain electrode and a body;
the feedback voltage dividing resistor comprises a positive end, a negative end and a feedback end;
The switching circuit comprises a first input end, a second input end, a first output end and a control end;
The first output end of the switching circuit is connected with the negative power supply end of the operational amplifier, the first input end of the switching circuit is grounded, and the second input end of the switching circuit is connected with the negative voltage output end of the negative voltage generating circuit;
The positive power end of the operational amplifier is connected with the source electrode and the body of the driving transistor to a positive potential, the positive input end of the operational amplifier is connected with the feedback end of the feedback voltage dividing resistor, the reverse input end of the operational amplifier is connected to a reference potential, the driving output end of the operational amplifier is connected with the grid electrode of the driving transistor, the wafer substrate end of the operational amplifier is connected to a negative potential, the positive end of the feedback voltage dividing resistor and the drain electrode of the driving transistor are connected to a voltage stabilizing output end, and the negative end of the feedback voltage dividing resistor is grounded;
the control end of the switching circuit is used for switching the first output end to be connected to the first input end or the second input end.
2. The voltage stabilizing circuit for high and low voltage circuit according to claim 1, wherein said control terminal of said switching circuit is connected to an external microcontroller, and switching operation of said switching circuit is controlled by said microcontroller.
3. The voltage stabilizing circuit for high and low voltage circuit according to claim 1, further comprising a voltage detecting circuit connected to the positive potential and to the control terminal of the switching circuit, the voltage detecting circuit being configured to detect the positive potential and control a switching operation of the switching circuit;
When the positive potential is judged to be smaller than a preset threshold value, the first output end of the switching circuit is switched to be connected to the second input end; and when the positive potential is judged to be greater than or equal to the preset threshold, the first output end of the switching circuit is switched to be connected to the first input end.
4. A voltage stabilizing circuit for high and low voltage circuits according to claim 3 and wherein said predetermined threshold is substantially 11V.
5. The voltage stabilizing circuit for high and low voltage circuit according to claim 1, wherein said operational amplifier comprises a low voltage N-type transistor and a high voltage N-type transistor connected to said low voltage N-type transistor;
The body of the low-voltage N-type transistor is connected to the negative power supply end of the operational amplifier, and the body of the high-voltage N-type transistor is connected to the wafer substrate end of the operational amplifier.
6. The voltage stabilizing circuit for high and low voltage circuit according to claim 5, wherein the positive potential has a voltage range of 7V to 22V, the negative potential has a voltage range of-7V to-22V, and the negative voltage output terminal of the negative voltage generating circuit has a voltage of substantially-2V.
7. A circuit control method applied to the voltage stabilizing circuit for high and low voltage circuits according to any one of claims 1 to 6, characterized by comprising:
setting a preset threshold value of the voltage detection circuit;
Applying the positive potential, the negative potential, and the reference potential to the voltage stabilizing circuit for the high-low voltage circuit; and
And controlling the switching operation of the switching circuit according to the voltage level of the positive potential.
CN202210412099.0A 2022-04-19 2022-04-19 Voltage stabilizing circuit for high-low voltage circuit and control method thereof Active CN114995575B (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000099173A (en) * 1998-09-17 2000-04-07 Citizen Watch Co Ltd Regulator circuit
CN101546538A (en) * 2008-03-27 2009-09-30 奇景光电股份有限公司 Latch-up protection circuit for LCD driver IC
CN110320955A (en) * 2019-07-10 2019-10-11 深圳市锐能微科技有限公司 A kind of low-dropout linear voltage-regulating circuit and integrated circuit
CN110728960A (en) * 2019-10-21 2020-01-24 湖南国科微电子股份有限公司 LCD drive circuit and display device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000099173A (en) * 1998-09-17 2000-04-07 Citizen Watch Co Ltd Regulator circuit
CN101546538A (en) * 2008-03-27 2009-09-30 奇景光电股份有限公司 Latch-up protection circuit for LCD driver IC
CN110320955A (en) * 2019-07-10 2019-10-11 深圳市锐能微科技有限公司 A kind of low-dropout linear voltage-regulating circuit and integrated circuit
CN110728960A (en) * 2019-10-21 2020-01-24 湖南国科微电子股份有限公司 LCD drive circuit and display device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
一种用于LDO稳压器的共享预稳压电路;李景虎;张兴宝;喻明艳;;固体电子学研究与进展;20110825(第04期);全文 *

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