CN114981940A - 在坚固的封装衬底中具有分割裸片垫的经封装电子装置 - Google Patents

在坚固的封装衬底中具有分割裸片垫的经封装电子装置 Download PDF

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CN114981940A
CN114981940A CN202180010847.6A CN202180010847A CN114981940A CN 114981940 A CN114981940 A CN 114981940A CN 202180010847 A CN202180010847 A CN 202180010847A CN 114981940 A CN114981940 A CN 114981940A
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China
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die
wire
package substrate
wire bond
bond
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CN202180010847.6A
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简宇涵
柯长彦
侯志谦
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Texas Instruments Inc
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Texas Instruments Inc
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Abstract

在所描述的实例中，一种设备(200)包含：封装衬底，其具有在裸片安装部分与导线接合部分(226)之间具有槽(224)的分割裸片垫；所述导线接合部分的第一端，其在所述槽的一端处耦合到所述裸片安装部分；所述导线接合部分的第二端，其耦合到所述封装衬底上的第一引线(210)。至少一个半导体裸片(202)安装在所述裸片安装部分上；第一导线接合(220)的第一端接合到所述至少一个半导体裸片(202)上的第一接合垫；所述第一导线接合(220)的第二端接合到所述导线接合部分(226)；且模制化合物(222)覆盖所述至少一个半导体裸片、所述裸片安装部分、所述导线接合部分，并填充所述槽(224)。

Description

在坚固的封装衬底中具有分割裸片垫的经封装电子装置
技术领域
本描述大体上涉及封装电子装置，且更特定来说，涉及具有耦合到裸片垫的导线接合的封装半导体裸片。
发明内容
在所描述的实例中，一种设备包含：封装衬底，其具有在裸片安装部分与导线接合部分之间具有槽的分割裸片垫；所述导线接合部分的第一端，其在所述槽的一端处连接到所述裸片安装部分；及所述导线接合部分的第二端，其连接到所述封装衬底上的第一引线。至少一个半导体裸片安装在所述裸片安装部分上；第一导线接合的第一端接合到所述至少一个半导体裸片上的第一接合垫；所述第一导线接合的第二端接合到所述导线接合部分；且模制化合物覆盖所述至少一个半导体裸片、所述裸片安装部分、所述导线接合部分，并填充所述槽。
附图说明
图1A-1D是经封装半导体裸片的投影图、经封装半导体裸片的横截面及其中半导体裸片安装在裸片垫上且具有去往裸片垫的导线接合的引线框架的平面图；图1E-1F是说明在将裸片安装到引线框架的裸片垫期间树脂渗出实例的横截面图。
图2A-2C分别是具有分割裸片垫的引线框架的平面图及投影图，以及其中半导体裸片安装在分割裸片垫的第一裸片安装部分上且具有去往分割裸片垫的第二导线接合部分的导线接合的经封装半导体裸片的投影图。
图3A-3G是说明制造具有带分割裸片垫布置的引线框架的经封装半导体裸片的主要步骤的一系列视图。
图4是说明对应于图3A-3G中的制造步骤的方法的流程图。
图5A-5E是经封装多芯片模块的制造过程中主要制造步骤的平面图及投影图，其中半导体裸片安装在分割裸片垫的第一裸片安装部分上，且具有去往分割裸片垫的第二导线接合部分的导线接合。
图6A-6D是可与分割裸片垫一起使用的实例半导体装置封装的投影图。
具体实施方式
除非另有指示，否则不同图中的对应数字及符号通常指对应的部分。附图不一定按比例绘制。
元件在本文中描述为“耦合”。如本文所使用的，术语“耦合”包含直接连接的元件，且即使与中间元件或导线电连接的元件也被耦合。
本文使用术语“半导体裸片”。半导体裸片可为例如双极晶体管的离散半导体装置、在半导体衬底上一起形成的几个离散装置，例如在单个半导体裸片上一起制造的一对功率FET开关，或半导体裸片可包含多个半导体装置，例如A/D转换器中的多个电容器。半导体裸片可包含无源装置(例如电阻器、电感器、滤波器)或有源装置(例如晶体管)。半导体裸片可为具有数百或数千个晶体管的集成电路，其耦合以形成功能数字电路，例如计算机处理器或存储器装置。半导体裸片可为无源装置，例如传感器。实例传感器包含光电池、换能器及电荷耦合装置(CCD)，或可为微机电装置，例如数字微镜装置(DMD)或另一MEMS装置。
本文使用术语“划线通道”。划线通道是半导体裸片之间的半导体晶片的一部分。有时在相关文献中使用的是术语“划线切割道”。一旦处理完成且半导体装置完成，通过沿划线通道切断半导体晶片将半导体装置分离为个别半导体裸片。然后可移除分离的裸片并个别地处置，以用于进一步处理，包含封装。这种从晶片移除裸片的过程被称为“分离”，有时也被称为“切割”。划线通道布置在半导体裸片的四侧上，当裸片彼此分离时，形成矩形半导体裸片。
术语“四平面无引线”或“QFN”在本文中用于装置封装。QFN封装具有与模制封装体的侧同延的引线，且在四元封装中，引线位于四个侧上。替代无引线封装在两侧上具有导线(小轮廓无引线或“SON”封装)。替代扁平无引线封装在一侧上可具有引线。无引线封装可为安装到板的表面。引线封装可与引线从模制封装体延伸并成形以形成用于焊接到板的端子部分的布置一起使用。有引线封装可在四个侧上有引线，称为四平面封装。双列直插封装或“DIP”可与布置一起使用。小轮廓IC封装或“SOIC”可与布置一起使用。
本文使用术语“封装衬底”。封装衬底是经布置以接收半导体裸片并在完成的半导体封装中支撑半导体裸片的衬底。封装衬底包含导电引线框架，其可由铜、铝、不锈钢及合金(例如合金42)形成。冲压及蚀刻工艺可用于生产引线框架。引线框架可包含用于安装半导体裸片的裸片垫，及布置在裸片垫附近的导电引线，用于使用导线接合、导线带状接合或其它导体耦合到半导体裸片上的接合垫。引线框架可以带状或二维阵列提供。裸片可放置在引线框架带或阵列上，裸片放置在用于每一装置的裸片垫上，且可使用裸片附接或裸片粘合剂将裸片安装到引线框架裸片垫。导线接合或带状接合可将半导体裸片上的接合垫耦合到裸片垫及引线框架的引线。在导线接合到位之后，可用保护材料(例如模制化合物)覆盖衬底、接合导线、裸片的一部分及裸片垫的至少一部分。可使用热固性模制化合物，例如环氧树脂。可使用转移模制，或可使用块模制，以从模制化合物形成封装体。在模制之后，可从带及模制化合物切割个别经封装装置，对于引线封装类型，引线框架引线的暴露部分然后形成经封装半导体装置的端子。对于无引线封装类型，模制化合物不覆盖引线的端，这些端形成从模制封装体暴露的端子。引线或端子可用于将封装的半导体装置安装到板。
替代封装衬底包含用于接收半导体裸片的预模制引线框架(PMLF)及模制互连衬底(MIS)。这些衬底可包含模制化合物及模制化合物中的导电部分。引线框架可包含冲压及部分蚀刻的引线框架。在部分蚀刻的引线框架中，可通过从金属引线框架的一侧蚀刻图案，然后从另一侧蚀刻来形成两层金属，以形成全厚度及部分厚度部分，且在一些区域中，可通过部分蚀刻的引线框架蚀刻所有金属以形成开口。封装衬底也可为承载导体的基于胶带及基于薄膜的衬底；陶瓷衬底、具有多层导体及绝缘体层的层压衬底；及陶瓷、玻璃纤维或树脂的印刷电路板衬底，或玻璃增强环氧树脂衬底，例如FR4。在实例布置中，下设引线框架的一些部分可比其它部分更低级别。例如，可从引线向下设置裸片垫。
本文使用术语“模具锁”来描述封装衬底(例如引线框架)中的开口，目的是允许在引线框架前侧上及引线框架后侧上形成的模制化合物之间形成模制化合物桥。这将前侧及后侧模制化合物锁定在一起，显著减少模制化合物与引线框架之间的分层。
本文使用术语“裸片垫”。如本文所使用的，裸片垫是封装衬底的一部分，其经配置以安装半导体装置裸片。在一些参考中，部分经成形类似于焊盘，且使用术语“裸片焊盘”。本文使用的裸片焊盘是裸片垫。
在与半导体装置裸片一起使用的导线接合封装中，裸片垫或由引线框架材料形成，周围由同样由引线框架材料制成的各种导电引线包围。在裸片安装、导线接合及模制操作期间，外部框架机械地支撑引线及裸片垫。引线框架可经冲压或蚀刻以形成图案。通常使用铜、不锈钢及合金42。引线框架也通常镀有镍、钯、金、银及其它镀层，以提高可焊性及可接合性，并减少腐蚀。在使用裸片附接材料将半导体裸片安装到裸片垫之后，接合导线被附着以将半导体裸片的接合垫导电地耦合到引线框架的引线。一些导线接合将半导体裸片的接合垫耦合到引线框架的di垫。热超声导线接合工具可使用热、机械压缩及超声波能量的组合，将非常精细的接合导线接合到半导体裸片上的接合垫，这种接合通常被称为“球”接合。在承载导线的工具中的毛细管从接合垫移开时，精细接合导线被分配并成形，且在引线框架的引线处形成“缝合”接合，然后随着毛细管从缝合处移开，接合导线被切割。热用于在从毛细管延伸的末端导线处形成熔融球，以开始下一次接合操作。接合导线可为铂、金、铜、铝以及这些的组合。金、铝及铜接合导线在许多电流装置中使用。
在已安装裸片的裸片垫上形成缝合接合的问题是“树脂渗出”。当要将裸片附接到裸片垫时，在裸片安装区域中分配裸片附接环氧树脂，并将裸片放置在环氧树脂上并压在裸片垫上。由于毛细管作用，裸片附接环氧树脂可在半导体裸片下方流动。来自裸片附接环氧树脂的树脂可“渗出”并流到被半导体裸片覆盖的裸片垫区域外，并流到裸片垫的表面上。如果树脂移动得距离半导体裸片的边缘太远，其可能会干扰在裸片垫上进行的后续缝合接合，并在接合期间当接合导线未成功形成导电导线接合时导致“不粘引线”故障。树脂渗出也可能导致封装装置中的分层，因为模制化合物对环氧树脂或树脂的粘附力小于对引线框架表面的粘附力。
在布置中，通过使用具有裸片安装部分、穿过裸片垫的槽及通过槽与裸片安装部分间隔的第二导线接合部分的分割裸片垫，解决在模制封装中封装半导体装置裸片中的导线接合失败及分层问题。布置的使用将导线接合区域与裸片垫的裸片安装区域分离，防止裸片安装部分中的树脂渗出影响导线接合；槽形成额外的模具锁，以增加模制化合物对裸片垫及半导体装置裸片的粘附力。布置的分割裸片垫的使用还增加额外的支持特征，以减少热超声导线接合操作期间由于裸片垫振动而导致的不粘垫及不粘导线接合问题。布置的使用对于多芯片模块封装尤其有益，其中多个半导体装置裸片安装在单个裸片垫上，在这种情况下更可能发生树脂渗出。
图1A在投影图中展示包含半导体裸片102的小轮廓集成电路(SOIC)封装100。图1B及1C分别展示安装在引线框架104的裸片垫106上的半导体裸片102的横截面图及俯视图，其中裸片102的接合垫使用导线接合118及120电耦合到引线框架104。注意，导线接合120将裸片垫106耦合到半导体裸片102。图1D展示引线框架104的俯视图。引线框架104具有其上安装有半导体裸片102的裸片垫106。裸片垫106耦合到引线框架104上的固定电势引线110。半导体裸片102上的接合垫116与裸片垫106之间的导线接合120可向半导体裸片102提供固定电势(通常接地)。引线框架104还具有引线框架引线108(信号引线)，引线框架引线108使用导线接合118耦合到半导体裸片102上的接合垫116。外部框架103在封装期间为包含引线108、110及裸片垫106的引线框架104提供机械稳定性。在装置分离期间，在施加模制化合物之后移除外部框架103。
引线框架104在裸片垫106与外部框架103之间具有阻尼片112。在此实例中，阻尼片112不用于电连接，而是加强引线框架104并减少导线接合期间由超声波焊接引起的振动。裸片垫的超声波振动可能导致导线接合120薄弱。稍后，在接着模制操作的修整及形成步骤期间，阻尼片112将与外部框架103断开。固定电势引线110及信号引线108的端部不被模制化合物122覆盖，以使半导体裸片封装100能够安装在电路衬底(例如印刷电路板)的引线上。模具锁开口113可形成在阻尼片112中及引线框架104上的其它地方，以减少引线框架104与模制化合物122之间的分层。在模具锁开口中，模制化合物在模制期间流过模具锁，且当模制化合物固化时，其硬化并以更好的附着力固定引线框架104，从而防止或减少分层问题。
如图1A及1B中所展示，在半导体裸片102的表面上的接合垫116与裸片垫106的一部分之间形成导线接合120。裸片垫106可处于固定电势，例如接地电势或Vss供电电势。如图1B中所展示，在裸片102上的接合垫上形成球接合，然后导线120延伸到在裸片垫上形成的缝合接合。缝合接合是“向下”接合，因为裸片垫表面低于(如图1B中所定向)半导体裸片102上的接合垫，因此在接合期间，接合工具毛细管必须将接合导线120伸出，然后将其向下移动以形成缝合。这些导线接合120可向半导体裸片102提供固定电势(通常接地)。如图1A及1B中的长度尺寸135所展示，接合导线120可为长的，尤其是当接合垫116不位于半导体裸片102的边缘附近时。在封装过程期间，这些导线120嵌入模制化合物122中(参见图1A)。将液态模制化合物热注入含有半导体裸片102及接合导线120的模具中。随着热固性模制化合物122冷却，其收缩，拉动接合导线120并向模制化合物122与裸片垫106之间的界面施加横向应力。接合导线120越长，应力越大。此拉应力可导致模制化合物122从裸片垫106分层，且还可导致导线接合120与裸片垫106之间的机械缝合接合失败。
图1E-1F说明在裸片安装及裸片垫导线接合期间可能发生的裸片附接树脂渗出情况。在图1E中，引线框架104与裸片垫106以横截面展示。展示分配到裸片垫106上之后的裸片附接环氧树脂或糊状材料105。拾取及放置工具或其它裸片处置装备(为清楚说明，未展示)将经分离半导体裸片102移动到位，并将其向下压入裸片附接环氧树脂105及裸片垫106。裸片附接环氧树脂由于毛细管作用而扩散及流动。在安装裸片之后，固化步骤将固化裸片附接环氧树脂105。
如图1E-1F中所展示，在固化之后，裸片附接环氧树脂105延伸超出裸片102的周长，且在此实例中，流到裸片垫106的边缘。延伸接合导线120以将半导体裸片102上的接合垫耦合到裸片垫106上的接合位置，这是为了将可放置在裸片垫上的电势(例如接地或Vss)耦合到裸片102。在标记为107的虚线区域中，清楚地展示导线接合的树脂渗出问题，接合导线120与裸片垫106之间的接合受到裸片附接环氧树脂105的干扰。在没有“渗出”的情况下，裸片附接环氧树脂105不应延伸到此接合位置。树脂渗出可能导致“不粘引线”故障，其中接合导线120中的缝合接合不会粘附到裸片垫表面。在自动导线接合工具中，可能会发生“辅助”循环，其中当缝合接合失败时自动接合停止，且接合工具等待操作员来辅助工具，这会降低处理量并可能导致装置报废。另外，模制化合物对裸片附接环氧材料的粘附力不如对引线框架表面的粘附力强，因此树脂渗出也可能导致成品封装中的分层。
图2A展示具有分割裸片垫(209，在虚线椭圆中展示)的布置引线框架204的俯视图。在图2A-2C中，为清晰起见，与图1A-1D中所展示类似的元件使用类似的参考标签。例如，图2A到2C中的引线框架204对应于图1A到1C中的引线框架104。
分割裸片垫209在作为裸片安装部分206的第一部分与第二导线接合部分226之间具有槽224。第二导线接合部分226通过图2A中的区域223中所展示的“颈部”部分连接到裸片安装部分206。从平面图来看，裸片安装部分206看起来像蝌蚪的“头部”，而导线接合部分226看起来像蝌蚪的“尾部”，因此，分割裸片垫209在本文中有时被称为“蝌蚪”垫。引线部分210从外部框架203延伸到导线接合部分226，并将提供外部引线，用于将电势(例如接地或Vss电压)施加到分割裸片垫209。图2A中的区域223中所展示的颈部部分提供到裸片安装部分206的电连接及机械连接，使得导线接合部分226及裸片安装部分206处于相同的电势。接地或固定电压电势可施加到裸片垫209。
图2B在另一平面图中展示引线框架204，其中半导体裸片202安装在裸片安装部分206上，且接合导线220从半导体裸片202上的接合垫延伸到导线接合部分226。导线接合220向半导体裸片202提供固定电势，导线接合220的第一端接合到半导体裸片202上的接合垫216，且第二端缝合接合到蝌蚪尾巴(导线接合部分226)，其可为例如接地接合。如图2C中所展示，模制化合物222在模制期间填充槽224，并阻止模制化合物222收缩应力到达接地接合(接合到导线接合部分226的接合导线220)。经填充槽224(模具锁)还防止模制化合物222从裸片安装部分206分层。此外，在裸片安装操作期间，槽224将防止树脂渗出问题，因为槽224防止裸片附接环氧树脂渗出到达导线接合部分226。以此方式，蝌蚪垫解决由于树脂渗出而导致的不粘引线问题、分层问题以及由于导线接合上的模制化合物应力而导致的接合导线拉脱问题。
槽宽度可在从约0.100mm到约0.300mm的范围内。槽大小可能随引线框架厚度而变化。槽需要足够宽，以确保模制化合物222在封装过程期间可以流过槽224。在用于布置中的实例引线框架材料中，5密耳厚的引线框架使用0.127mm的槽大小，6密耳厚的引线框架使用0.150mm的槽大小，8密耳厚的引线框架使用0.203mm的槽大小，10密耳厚的引线框架使用0.254mm的槽大小，其中“密耳”为1/1000英寸。由于模制化合物可包含填料颗粒，且这些颗粒也需要流过槽，因此可通过实验轻松确定特定引线框架及模制化合物组合所需的最小槽大小。
在图2A中，蝌蚪“尾部”(导线接合部分226)的第一端通过槽224一端处的颈部部分附接到裸片安装部分206(蝌蚪“头部”)(参见图2A中的区域223)。蝌蚪尾部(导线接合部分226)的第二端连接到封装的封装衬底引线210(例如，接地或Vss引线)。在模制期间，引线210的一部分保持未被模制化合物222覆盖，以使其能够安装并耦合到电路衬底上的板，例如印刷电路板(未展示)。阻尼片228在导线接合及封装过程期间向导线接合部分226及裸片安装部分206提供结构稳定性。阻尼片228减少热超声导线接合期间可能削弱接地接合的振动。阻尼片228的第一侧附接到裸片安装部分206，即蝌蚪垫的“头部”。阻尼片228的第二侧附接到围绕引线框架204的外部框架203。阻尼片228的第三侧邻近于引线框架信号引线208并与之电隔离。阻尼片228的第四侧邻近于衬底引线210(通常为固定电势引线)并使用短路棒230附接到衬底引线210。当在成品装置分离过程期间移除引线框架的外部框架203时，此短路棒230保持完整。短路棒230在蝌蚪尾部(导线接合部分226)与裸片安装部分206之间提供第二电连接。
在图2B中，第一导线接合220的一端接合到半导体裸片202上的第一接合垫216，且第一导线接合220的另一端接合到形成固定电势接合(例如接地接合)的蝌蚪尾部(导线接合部分226)。第二导线接合218的一端接合到半导体裸片202上的第二接合垫216，且第二导线接合218的另一端接合到封装衬底信号引线208(信号接合)。在半导体裸片202的操作期间，信号引线上的电势可改变(在接地、0伏或VSS与电源之间，例如数字电路中的电压VDD，各种其它电压电平可为电源或模拟电路中的信号电压)。
在图2C中，在完成之后以投影视图展示模制引线DIP封装。引线框架部分203已在模制之后移除。在封装过程期间，蝌蚪尾部(导线接合部分226)与蝌蚪头部(裸片安装部分206)之间的槽224填充有模制化合物222，防止横向应力(尤其是在较长的接合导线220上)到达接地接合。这减少模制化合物222与分割裸片垫(图2A中的209)之间的分层事件，并消除接地接合的应力故障。阻尼片228在导线接合及封装期间向蝌蚪尾部(导线接合部分226)提供额外支撑。短路棒230向蝌蚪尾部(导线接合部分226)及裸片安装部分206提供额外的机械支撑。注意在修剪及形成步骤期间，在从框架203切割之后的阻尼片228的末端在图2C中展示。引线210已成形(与其它导线一起)以形成完整封装装置200的封装导线。
图3A-3G在一系列视图中说明形成封装半导体裸片300的主要步骤，其中分割裸片垫具有由槽324分离的蝌蚪形头部(裸片安装部分306)及蝌蚪形尾部(导线接合部分326)。
在图3A-3G中，为清晰起见，与图2A-2C中所展示类似的元件使用类似的参考标签。例如，图3A-3G中的引线框架304对应于图2A-2C中的引线框架204。图3A-3G中主要步骤的描述列于图4的过程流程图中。
图3A展示引线框架带305，其中三个引线框架304通过由引线框架材料制成的划片切割道354连接在一起。(步骤401，图4)。引线框架304具有带裸片安装部分306、信号引线308、引线310、导线接合部分326、槽324、阻尼片328及短路棒330的分割裸片垫。外部框架303围绕引线框架304，从而在导线接合及封装过程期间提供结构稳定性。(在封装装置分离过程期间，在修剪及形成工具中移除外部框架303。)
图3B展示半导体衬底，例如半导体晶片314，其表面覆盖有半导体装置裸片302。水平划线通道348(在晶片如图3B中描绘时的水平)及垂直划线通道350将每一裸片302与邻近裸片302分离。
半导体装置裸片302通过沿水平划线通道348及垂直划线通道350(当晶片在图3B中定向时，水平及垂直)切割晶片314来分离(参见步骤403，图4)。图3C是在半导体裸片302的装置侧上具有接合垫316的经分离裸片302中的一者的展开图。
在图3D中，分离裸片302安装在封装衬底304上的分割裸片垫的裸片安装部分306上(步骤403)。在此实例布置中，封装衬底304是引线框架带305中的引线框架。封装衬底304也可为承载导体的基于胶带及基于膜的衬底；陶瓷衬底、具有多层导体及绝缘体层的层压衬底；及陶瓷、玻璃纤维或树脂的印刷电路板衬底，或玻璃增强环氧树脂衬底，例如FR4。封装衬底可为PMLF及MIS衬底。引线框架带305包括若干个别的引线框架304(裸片安装部分306、导线接合部分326、信号引线308、引线310)。个别引线框架304通过由引线框架材料制成的划片切割道354接合在一起。每一引线框架具有分割裸片垫，其具有由槽间隔的裸片安装部分及导线接合部分，如上文关于图2A到2C所描述。
在图3E中，半导体裸片302上的第一接合垫316使用导线接合320电耦合到引线框架304上的蝌蚪尾部(导线接合部分326)(步骤407)。在实例布置中，这提供将固定电势(例如接地或Vss)耦合到半导体裸片302的方法。半导体裸片302上的额外接合垫316使用导线接合318耦合到引线框架信号引线308(步骤409)。其它导电连接器(例如带状接合)可用作导线接合的替代物。
在图3F中，裸片302、导线接合318及320以及信号引线308及接地引线310的部分被模制化合物322(例如填充环氧树脂)覆盖(步骤411)。模制化合物可为热固性环氧树脂。在其中安装高压半导体装置的实例中，模制化合物符合IEC 61010-1标准的CTI(比较跟踪指数)1级，CTI>600V。暴露于高压的模制化合物可在表面上展现导电泄漏路径，形成碳化轨迹。使用CTI指数对用于电模制化合物(EMC)的材料进行绝缘评级。在为特定应用选择模制化合物时，必须考虑隔离要求。
在图3G中，通过切割引线框架304之间的划片切割道354及切割引线框架带305中的外部框架303，将个别封装半导体裸片300彼此分离(步骤413)。
图3G展示经分离封装半导体装置300的俯视图，其具有分割裸片垫，包含通过槽324与蝌蚪尾部(导线接合部分326)分离的蝌蚪头部(裸片安装部分306)。在上文所描述的图2C中，所述图展示对应于图3G中所展示的平面图的小轮廓集成电路(SOIC)封装半导体装置200的投影图。
蝌蚪尾部(导线接合部分326)与蝌蚪头部(裸片安装部分306)之间的槽324提供一个开口，模制化合物322在模制期间流过所述开口。此开口还防止从裸片安装部分306上的裸片附接环氧树脂渗出的树脂到达导线接合部分326，从而防止接地接合的不粘引线问题。槽324还在裸片安装垫306的两个相对表面上的模制化合物322之间形成模具锁。此模具锁防止在模制化合物收缩期间沿着接合导线320累积的应力到达导线接合部分326上的接地接合。布置的分割裸片垫的使用减少模制化合物322与裸片安装垫306之间的分层，还减少接合导线320与分割裸片垫的导线接合部分326之间的接地接合失败。
图5A-5E在一系列视图中说明制造多芯片模块(MCM)的主要步骤，所述MCM具有多于一个分割裸片垫，所述分割裸片垫具有由槽524、525间隔的裸片安装部分506、507及对应导线接合部分526、527，及安装到裸片安装部分的多于一个半导体裸片(552、555、556、558、元件560)。在图5A-5E中，为清晰起见，与图2A-2C中所展示类似的元件使用类似的参考标签。例如，图5A-5C中的导线接合部分526对应于图2A-2C中的导线接合部分226。
图5A中的引线框架带505具有三个引线框架504，它们通过由引线框架材料制成的划片切割道554耦合在一起。每一引线框架504具有三个裸片安装部分506、507及509以及两个导线接合部分526及527。阻尼片528、529将导线接合部分526、527及裸片安装部分506、507耦合到围绕引线框架504的外部框架503。另外，安装部分509经布置以安装无源元件，在此实例中，在多芯片模块中安装承载电感器、线圈或换能器的层压板(参见图5B中的元件560)。
在图5B中，半导体裸片552及555安装在裸片安装部分506上，且半导体裸片556及558安装在裸片安装部分507上。元件560安装在裸片安装部分509上。在安装裸片时，在一些布置中，可将抗树脂渗出材料应用于封装衬底。然而，在这个所说明实例中，如果使用裸片附接材料将多于一个裸片安装到单个裸片垫上，那么在第一裸片安装之后的裸片附接固化步骤可能会降低第二裸片安装的抗树脂渗出材料的有效性，因此当安装第二裸片时，裸片附接环氧树脂糊可能会渗出。第一裸片安装之后的固化降低抗树脂渗出材料的有效性。在布置中使用分割裸片垫的槽确保对分割裸片垫的导线接合部分进行的导线接合不会受到裸片安装部分上树脂渗出的影响，无论是否施加抗树脂渗出材料。导线接合520将裸片552上的接合垫耦合到第一蝌蚪尾部(导线接合部分526)。导线接合521将裸片558上的接合垫耦合到第二蝌蚪尾部(导线接合部分527)。在此实例中，具有蝌蚪形状的分割裸片垫具有带五个侧的不规则多边形。可使用其它形状。矩形、正方形、长菱形、菱形、圆形、椭圆形、三角形及其它垫形状可与通过槽与导线接合部分间隔的裸片安装部分一起使用，使得导线接合部分的一部分在槽的一端处附接到裸片安装部分。在此实例中，槽524、525平行于分割裸片垫的整体形状，且具有中心弯曲部分，以匹配裸片安装部分的不规则多边形形状的两个短边的交点。在所有这些不同形状中，槽将分割裸片垫的导线接合部分与裸片安装部分间隔，且槽还形成模具锁。
在图5C中，在每一引线框架504上，半导体裸片552、555、556、558、560；裸片安装部分506、507；导线接合部分526、527，导线接合518、519、520、521；阻尼片528、529；以及信号引线508及接地引线510的一部分被模制化合物522覆盖。在模制之后，信号引线508及电势引线510的一部分仍暴露于模制化合物522，这些部分将形成为封装装置的外部引线。外部引线使得能够将封装的MCM装置500安装在电路衬底(例如印刷电路板)的导电板上。在此实例布置中，元件560是层压板上的线圈，裸片555、556是耦合电容器，且裸片558、552是开关晶体管，以在单个多芯片模块中形成一对电隔离开关电路。
图5D是一个封装的MCM 500的俯视图，其已通过切割划片切割道554并通过切割信号引线508及引线510以移除外部框架503而从引线框架带505分离出来。支撑片528、529在修剪及形成操作中被切割，且不用作电连接，但是在图5D及5E中，切割端在模制化合物522的外表面处可见。
图5E是完成的小轮廓集成电路(SOIC)封装多芯片模块(MCM)500的投影图。此MCM500具有带导线接合部分526、527及其上安装有多个半导体裸片552、555、556、558的裸片安装垫506、507的两个分割裸片垫。元件560安装在另一裸片安装部分上。其它封装类型(图6A-6D中说明几个实例)可与这些布置一起使用。
蝌蚪尾部(导线接合部分)526、527通过槽524、525与蝌蚪头部(裸片安装部分)506、507分离。导线接合部分526、527的第一端通过位于槽524、525的一端处的引线框架材料的颈部部分耦合到分割裸片垫的裸片安装部分506、507。蝌蚪尾部(导线接合部分526、527)的第二端耦合到引线510及511，引线510及511可向裸片提供固定电势。耦合在裸片安装垫506、507与外部框架503之间的阻尼片528、529在导线接合及封装过程期间提供稳定性。阻尼片528、529(图5A)与导线接合部分526、527之间的短路棒530、531(参见图5A)在蝌蚪尾部(导线接合部分526、527)与蝌蚪头部(裸片安装部分506、507)之间提供机械支撑及连接。槽524、525用作模具锁，阻止由于模制化合物522沿导线接合520、521的长度收缩而产生的应力到达接合导线部分526、527上的接地接合。如上文所描述的，槽524、525防止由于在裸片安装部分506、507上安装半导体裸片之后树脂渗出导致的不粘引线问题。分割裸片垫设计减少模制化合物522与裸片安装部分506、507之间的分层，并减少由模制化合物收缩应力导致的裸片垫导线接合的失败。
图6A-6D在投影图中展示可与布置一起使用的半导体裸片封装的几个代表性实例。这些半导体封装可含有单个半导体裸片，或可含有多个半导体裸片。所有这些都适用于布置的分割裸片垫设计。图6A是小轮廓集成电路(SOIC)。图6B是双列直插封装集成电路(DIP)。图6C是引线四平面封装集成电路(QFP)。图6D是四平面无引线封装集成电路(QFN)。
在所描述的布置中修改是可能的，且在权利要求的范围内其它替代布置是可能的。

Claims (19)

1.一种设备，其包括：
封装衬底，其具有分割裸片垫，所述分割裸片垫在裸片安装部分与面积小于所述裸片安装部分的导线接合部分之间具有槽；
所述导线接合部分的第一端，其在所述槽的一端处耦合到所述裸片安装部分；
所述导线接合部分的第二端，其耦合到所述封装衬底上的第一引线；
至少一个半导体裸片，其安装在所述裸片安装部分上；
第一导线接合的第一端，其接合到所述至少一个半导体裸片上的第一接合垫；
所述第一导线接合的第二端，其接合到所述导线接合部分；
第二导线接合的第一端，其接合到所述至少一个半导体裸片上的第二接合垫；
所述第二导线接合的第二端，其接合到所述封装衬底上的信号引线；
模制化合物，其覆盖所述至少一个半导体裸片、所述裸片安装部分、所述导线接合部分，并填充所述槽；及
所述模制化合物，其覆盖所述信号引线的至少一部分及所述第一引线的至少一部分。
2.根据权利要求1所述的设备，所述封装衬底进一步包括耦合在所述裸片安装部分与所述导线接合部分之间的阻尼片。
3.根据权利要求2所述的设备，其中短路棒将所述阻尼片耦合到所述导线接合部分。
4.根据权利要求1所述的设备，其中所述封装衬底是引线框架。
5.根据权利要求1所述的设备，其中所述槽的宽度为至少0.100毫米。
6.根据权利要求1所述的设备，其进一步包括安装在所述裸片安装部分上的至少第二半导体裸片。
7.根据权利要求1所述的设备，其中所述分割裸片垫包括第一分割裸片垫，且所述设备进一步包括第二分割裸片垫，所述第二分割裸片垫具有第二裸片安装部分及通过第二槽与所述第二裸片安装部分间隔的第二导线接合部分，及安装在所述第二裸片安装部分上的至少第二半导体裸片。
8.根据权利要求1所述的设备，其中多于一个半导体裸片安装在所述裸片安装部分上，且所述设备形成作为多芯片模块(MCM)的半导体封装。
9.根据权利要求1所述的设备，其中所述设备形成半导体封装，所述半导体封装选自基本上由以下组成的群组：小轮廓集成电路(SOIC)封装、双列直插封装(DIP)、四平面封装(QFP)及四平面无引线(QFN)封装。
10.一种方法，其包括：
将至少一个半导体裸片安装在具有至少一个分割裸片垫的封装衬底上，所述分割裸片垫包括将裸片安装部分与导线接合部分分离的槽，所述导线接合部分在所述槽的第一端处连接到所述裸片安装部分；
在与所述槽的所述第一端相对的所述槽的第二端处将所述封装衬底的第一引线耦合到所述导线接合部分；
在所述至少一个半导体裸片上的第一接合垫与所述导线接合部分之间形成第一导线接合；
在所述至少一个半导体裸片上的第二接合垫与所述封装衬底上的信号引线之间形成第二导线接合；
用模制化合物覆盖所述至少一个半导体裸片、所述导线接合部分、所述裸片安装部分、所述第一及第二导线接合以及所述信号引线的至少一部分及所述第一引线的至少一部分，使所述信号引线及所述第一引线的一部分不被所述模制化合物覆盖；及
从所述封装衬底移除外部框架以形成经封装半导体装置。
11.根据权利要求10所述的方法，其进一步包括：
在所述封装衬底上形成至少一个阻尼片，其中第一侧附接到所述裸片安装部分，第二侧附接到所述封装衬底上的所述外部框架，第三侧邻近于信号引线并与所述信号引线电隔离，且第四侧邻近于所述第一引线；
用短路棒将所述阻尼片连接到所述第一引线；及
在用模制化合物覆盖所述半导体裸片之后，从所述阻尼片移除所述外部框架。
12.根据权利要求10所述的方法，其中所述槽为至少0.100mm宽。
13.根据权利要求10所述的方法，其中：
所述封装衬底进一步包括封装衬底带，其中多个个别的封装衬底利用由封装衬底材料制成的划片切割道耦合在一起；且
在用模制化合物覆盖所述半导体裸片之后，通过切割所述划片切割道分离个别的封装衬底。
14.根据权利要求10所述的方法，其中所述封装衬底是引线框架。
15.根据权利要求10所述的方法，其中所述封装选自基本上由以下组成的群组：小轮廓集成电路(SOIC)封装、双列直插封装(DIP)、四平面封装(QFP)及四平面无引线(QFN)封装。
16.根据权利要求10所述的方法，且其进一步包括：
在所述裸片安装部分上安装至少第二半导体裸片；及形成经封装多芯片模块。
17.根据权利要求10所述的方法，其进一步包括：
将至少一个第二半导体裸片安装在第二裸片安装部分上，所述第二裸片安装部分通过所述封装衬底中的第二槽与第二导线接合部分间隔，所述第二导线接合部分的第一端在所述第二槽的一端处附接到所述第二裸片安装部分；
将所述第二导线接合部分的第二端附接到所述封装衬底的第二引线；
在所述至少一个第二半导体裸片上的第三接合垫与所述第二导线接合部分之间形成第三导线接合；
所述信号引线形成第一信号引线，并在所述至少一个第二半导体裸片上的第四接合垫与第二信号引线之间形成第四导线接合；
用模制化合物填充所述第二槽并用所述模制化合物覆盖所述至少一个第二半导体裸片、所述第二裸片安装部分、所述第二导线接合部分以及所述第三及第四导线接合；及
使所述第二信号引线及所述第二引线的一部分未被模制化合物覆盖。
18.根据权利要求17所述的方法，其中所述封装衬底包括封装衬底带的一部分，其中多个多芯片模块封装衬底通过由封装衬底材料制成的划片切割道耦合在一起；
在所述模制化合物覆盖步骤之后通过切割所述划片切割道，将多芯片模块封装衬底彼此分离；及
形成个别多芯片模块封装。
19.一种经封装电子装置，其包括：
封装衬底，其具有至少一个分割裸片垫，所述至少一个分割裸片垫在裸片安装部分与面积小于所述裸片安装部分的导线接合部分之间包含槽；
所述导线接合部分的第一端，其在所述槽的一端处耦合到所述裸片安装部分；
所述导线接合部分的第二端，其耦合到所述封装衬底上的第一引线；
至少一个半导体裸片，其安装在所述裸片安装部分上；
第一导线接合的第一端，其接合到所述至少一个半导体裸片上的第一接合垫；
所述第一导线接合的第二端，其接合到所述导线接合部分；
第二导线接合的第一端，其接合到所述至少一个半导体裸片上的第二接合垫；
所述第二导线接合的第二端，其接合到所述封装衬底上的信号引线；
模制化合物，其覆盖所述至少一个半导体裸片、所述裸片安装部分、所述导线接合部分，并填充所述槽；及
所述模制化合物，其覆盖所述信号引线的一部分并覆盖所述第一引线的一部分。
CN202180010847.6A 2020-03-26 2021-03-26 在坚固的封装衬底中具有分割裸片垫的经封装电子装置 Pending CN114981940A (zh)

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