CN114959886A - Branched CsPbBr prepared by vapor phase growth 3 Method for preparing nanocrystalline thin film - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 46
- 239000010409 thin film Substances 0.000 title claims abstract description 24
- 238000001947 vapour-phase growth Methods 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 239000010408 film Substances 0.000 claims abstract description 25
- 238000010438 heat treatment Methods 0.000 claims abstract description 23
- 239000002243 precursor Substances 0.000 claims abstract description 22
- 239000013078 crystal Substances 0.000 claims abstract description 16
- 239000012159 carrier gas Substances 0.000 claims abstract description 12
- 238000001816 cooling Methods 0.000 claims abstract description 10
- 239000012296 anti-solvent Substances 0.000 claims abstract description 6
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 12
- LYQFWZFBNBDLEO-UHFFFAOYSA-M caesium bromide Chemical compound [Br-].[Cs+] LYQFWZFBNBDLEO-UHFFFAOYSA-M 0.000 claims description 10
- 238000002360 preparation method Methods 0.000 claims description 9
- 229910002367 SrTiO Inorganic materials 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 7
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 2
- 230000003993 interaction Effects 0.000 claims description 2
- 230000000087 stabilizing effect Effects 0.000 claims description 2
- 239000012071 phase Substances 0.000 abstract description 7
- 239000007791 liquid phase Substances 0.000 abstract description 4
- 239000013110 organic ligand Substances 0.000 abstract description 4
- 239000002159 nanocrystal Substances 0.000 abstract description 3
- 239000002120 nanofilm Substances 0.000 abstract description 2
- 238000005191 phase separation Methods 0.000 abstract description 2
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 9
- 239000002086 nanomaterial Substances 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000003960 organic solvent Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000035484 reaction time Effects 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000002189 fluorescence spectrum Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- ZASWJUOMEGBQCQ-UHFFFAOYSA-L dibromolead Chemical compound Br[Pb]Br ZASWJUOMEGBQCQ-UHFFFAOYSA-L 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000634 powder X-ray diffraction Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/12—Halides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a method for preparing branch-shaped CsPbBr by vapor phase growth 3 The method for preparing nano crystal film includes preparing CsPbBr as precursor by anti-solvent method 3 Placing the single crystal in a heating zone of a tube furnace, simultaneously placing the substrate in a cooling zone outside the heating zone at the downstream of a carrier gas, pushing the substrate into a heating tube after the temperature of the tube furnace is stable, keeping the position 12-15 cm away from a precursor, and maintaining the temperature in the tube to continue reacting to obtain the branched CsPbBr 3 A nanocrystalline thin film. The branched CsPbBr prepared by the invention 3 CsPbBr in nano crystal film 3 Is cubic phase, has no phase separation problem and no organic ligand, theoretically has higher specific surface area and is branched CsPbBr compared with the traditional liquid phase method 3 The nano film also has better stability, can be placed in the air for more than 1 month, and keeps the original XRD peak unchanged.
Description
Technical Field
The invention belongs to the technical field of preparation of perovskite nano materials, and particularly relates to a method for preparing branch-shaped CsPbBr by vapor phase growth 3 A method of forming a nanocrystalline thin film.
Background
The lead-perovskite halide material is an excellent photovoltaic material and luminescent material due to the properties of extremely long carrier transmission distance, extremely low defect state density, very high light absorption coefficient and the like, and is widely applied to the fields of solar cells, light-emitting diodes, photoelectric sensors and the like. The perovskite thin film with a certain nano structure, especially the preparation of the thin film with high specific surface area, has an important boosting effect on the improvement of the device performance.
Currently, CsPbBr 3 The membrane is prepared by a solution method, such as a two-step solution method, in which PbBr is firstly added 2 Dissolving in DMF, forming a film by using a spin coating process, and then carrying out high-temperature annealing treatment to obtain PbBr 2 Film, finally PbBr is added 2 The membrane is immersed in methanol solution of CsBr, and CsPbBr is formed by controlling reaction time and reaction temperature 3 And (3) a film. However, toxic solvents such as methanol and DMF not only cause great environmental pollution, but also pose a threat to the health of operators. The one-step solution method is to obtain CsPbBr 3 And (5) carrying out spin coating and annealing on the quantum dots to obtain the film. CsPbBr obtained by these solution processes 3 The membrane is often blocky and does not have a certain nano structure, so the specific surface area of the membrane is small, and the problems that an organic solvent or a ligand is difficult to remove and is easy to phase separate exist, thereby the CsPbBr is seriously influenced 3 Use on high quality integrated devices.
Therefore, development of a method for obtaining CsPbBr 3 Pure phase film with special nano structure, no need of organic solvent or ligand preparation method, and very important meaning.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention aims to provide a method for preparing branched CsPbBr by vapor phase growth 3 The method for preparing the nanocrystalline film can effectively solve the technical problems of easy phase separation, difficult removal of organic solvent or ligand and incapability of ensuring the specific surface area of the conventional preparation method.
In order to achieve the purpose, the invention adopts the following technical scheme to realize the purpose:
the invention discloses a method for preparing branch-shaped CsPbBr by vapor phase growth 3 A method of making a nanocrystalline film comprising the steps of:
1) preparation of CsPbBr 3 Single crystal as precursor for use;
2) crushing the precursor prepared in the step 1), placing the crushed precursor in a heating area of a tube furnace, placing the substrate in a cooling area at the downstream of a carrier gas of the tube furnace and outside the heating area, and then heating the tube furnace to 350-400 ℃ and stabilizing for 1 minute;
3) pushing the substrate into a heating pipe of a tube furnace, keeping the temperature of the tube furnace at 350-400 ℃ at a position 12-15 cm away from the precursor, reacting for 1-4 hours, and naturally cooling to prepare the branched CsPbBr 3 A nanocrystalline thin film.
Preferably, in step 1), CsPbBr is prepared 3 CsBr and PbBr with a molar ratio of 1:1 during single crystal growth 2 Dissolving in DMSO, and preparing CsPbBr by anti-solvent method 3 And (3) single crystal.
Preferably, in step 2), the carrier gas in the tube furnace is Ar gas, the pressure of the carrier gas is 100mTorr, and the flow rate of the carrier gas is 18 sccm.
Preferably, the substrate is SrTiO 3 ITO or sapphire glass.
Further preferably, the substrate is a 5mm x 10mm x 0.5mm tile.
Preferably, in step 2), the tube furnace is warmed to 375 ℃ and stabilized for 1 minute.
Preferably, in step 3), the operation of pushing the substrate into the heating tube is performed while the tube furnace is closed.
Further preferably, a magnet is placed outside the tube furnace, and the substrate is pushed into the tube furnace by the interaction of the magnet.
The invention also discloses a method for preparing branch-shaped CsPbBr by adopting the vapor phase growth 3 Branched CsPbBr prepared by method of nanocrystalline film 3 A nanocrystalline thin film.
Compared with the prior art, the invention has the following beneficial effects:
the invention discloses a method for preparing branched CsPbBr by vapor phase growth 3 The method for preparing nano crystal film includes preparing CsPbBr as precursor by anti-solvent method 3 Placing the single crystal in a heating zone of a tube furnace, simultaneously placing the substrate in a cooling zone outside the heating zone at the downstream of a carrier gas, pushing the substrate into a heating tube after the temperature of the tube furnace is stable, keeping the position 12-15 cm away from the precursor to ensure that the gaseous precursor can be deposited on the substrate, and maintaining the temperature in the tube to continue reacting to prepare the branched CsPbBr 3 A nanocrystalline thin film.
Further, the branched CsPbBr in the invention 3 The nanocrystalline film can be grown on SrTiO 3 The ITO glass and the sapphire glass are used as substrates, can be theoretically expanded to various substrates, and have certain universality.
The branched CsPbBr prepared by the invention 3 The CsPbBr3 in the nanocrystalline thin film is a cubic phase, so that compared with the traditional liquid phase method, the nanocrystalline thin film has no phase splitting problem and no organic ligand is used; compared with a block obtained by a traditional liquid phase method, the branched CsPbBr3 nano structure theoretically has a higher specific surface area; meanwhile, the branched CsPbBr3 nano film also has good stability, can be placed in the air for more than 1 month, and keeps the original XRD peak unchanged.
Drawings
FIG. 1 shows CsPbBr preparation used in the present invention 3 A schematic of a single crystal precursor apparatus;
FIG. 2 shows CsPbBr obtained by the present invention 3 An optical image of the single crystal precursor;
FIG. 3 is a schematic view of an apparatus for vapor phase growth according to the present invention;
FIG. 4 shows the branched CsPbBr obtained by the present invention 3 An optical image of the film;
FIG. 5 shows the branched CsPbBr obtained by the present invention 3 Film growth on SrTiO 3 Scanning electron microscope images of the substrate;
FIG. 6 shows the branched CsPbBr obtained by the present invention 3 Scanning electron microscope images of the thin film grown on the ITO substrate;
FIG. 7 shows the branched CsPbBr obtained by the present invention 3 The film grows on the scanning electron microscope picture of the sapphire glass substrate;
FIG. 8 shows the branched CsPbBr obtained by the present invention 3 A powder X-ray diffraction pattern of the film;
FIG. 9 shows the branched CsPbBr obtained by the present invention 3 A fluorescence emission spectrum of the film;
FIG. 10 shows the branched CsPbBr of the present invention 3 A branch of the fluorescence emission spectrum with variable power.
Detailed Description
In order to make the technical solutions of the present invention better understood, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and claims of the present invention and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the invention described herein are capable of operation in other sequences than those illustrated or described herein. Moreover, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
The invention is described in further detail below with reference to the accompanying drawings:
the invention discloses a method for preparing branched CsPbBr by vapor phase growth 3 A method of making a nanocrystalline film comprising the steps of:
1) CsPbBr preparation by anti-solvent method 3 The single crystal is used as a precursor for next growth for standby;
2) the CsPbBr obtained in the step 1) 3 Grinding the single crystal as precursor, heating in tubular furnace, and adding SrTiO 3 ITO or sapphire glass is used as a substrate and is placed at the downstream of the carrier gas, and a cooling area outside a heating area is arranged;
3) and the temperature of the tubular furnace is raised to 350-400 ℃, and the stability is kept for 1 minute.
4) And pushing the substrate into the heating pipe, wherein the distance between the substrate and the precursor is 12-15 cm.
5) And maintaining the temperature in the step 3) for reaction for 1-4 hours, and then naturally cooling.
Example 1
1) CsBr and PbBr at a molar ratio of 1:1 2 Dissolving the CsPbBr3 into DMSO, and preparing CsPbBr3 single crystal by an anti-solvent method. Specifically, 21.2mg CsBr,36.7mg PbBr2 were dissolved in 1mL DMSO and poured into a 6mL glass vial, which was placed open in a 24mL large bottle with 1mL methanol in the bottle, and the bottle was sealed. The structure of the device is shown in figure 1, and a plurality of CsPbBr can be obtained after the device is kept still for 2-3 days 3 Single crystal samples (as shown in figure 2).
2) Grinding CsPbBr3 single crystal obtained in step 1) serving as a precursor, placing the precursor into a heating zone of a tube furnace, and adding SrTiO 3 A cooling zone as a substrate located downstream of the carrier gas and outside the heating zone;
3) and the temperature of the tube furnace is raised to 375 ℃ and the tube furnace is stabilized for 1 minute.
4) Pushing the substrate into a heating tube, keeping the substrate at a position 12cm away from the precursor, keeping the temperature of the substrate at 230 ℃, continuing to react for 3 hours, turning off the furnace, naturally cooling to room temperature to obtain the SrTiO 3 CsPbBr of different thickness on substrate 3 A film. The appearance of the resulting film is shown in FIG. 4.
As shown in FIGS. 5 to 7, the branched CsPbBr prepared in this example 3 The nanocrystalline thin film has a branch-like nanostructure, and the branch-like nanostructure has uniformity on different substrates.
As shown in FIG. 8, the obtained branched CsPbBr 3 The nanocrystalline film is a pure phase cubic phase crystal.
As shown in FIG. 9, the fluorescence emission peak position of the branched CsPbBr3 nanocrystalline thin film is about 520nm, which is similar to that of CsPbBr in the literature report 3 The positions of the fluorescence emission peaks are consistent.
As shown in FIG. 10, the branched CsPbBr 3 After the nanocrystalline is scraped, the variable power laser test is carried out, and CsPbBr with single branch structure can be known 3 The nanocrystalline can be used as a laser resonant cavity, and the laser emission threshold of the nanocrystalline is 7.4 mu J/cm 2 。
Example 2
Different from the example 1, the substrate used was an ITO substrate, the temperature of the tubular reactor was 350 ℃, and the reaction time was 4 hours.
Example 3
Different from the example 1, the substrate used was a sapphire substrate, the temperature of the tubular reaction furnace was 400 ℃, and the reaction time was 1 hour.
In conclusion, the preparation of branched CsPbBr by vapor phase growth disclosed by the invention 3 Compared with a liquid phase method, the method of the nanocrystalline thin film does not need an organic solvent, thereby avoiding the trouble of subsequent treatment and the negative influence of the organic solvent on the material property. In addition, the currently used vapor phase method is to set the position of the substrate before heating and then to heat the substrate for reaction; in the method, the tube is heated first, then the substrate is pushed in to ensure that the gaseous precursor can be deposited on the substrate, and then the temperature in the tube is maintained to continue the reaction to prepare the branched CsPbBr 3 A nanocrystalline thin film.
The above-mentioned contents are only for illustrating the technical idea of the present invention, and the protection scope of the present invention is not limited thereby, and any modification made on the basis of the technical idea of the present invention falls within the protection scope of the claims of the present invention.
Claims (9)
1. Branched CsPbBr prepared by vapor phase growth 3 A method of forming a nanocrystalline film, comprising the steps of:
1) preparation of CsPbBr 3 Single crystal as precursor for use;
2) crushing the precursor prepared in the step 1), placing the crushed precursor in a heating area of a tube furnace, placing the substrate in a cooling area at the downstream of a carrier gas of the tube furnace and outside the heating area, and then heating the tube furnace to 350-400 ℃ and stabilizing for 1 minute;
3) pushing the substrate into a heating tube of a tube furnace, keeping the temperature of the tube furnace at 350-400 ℃ at a position 12-15 cm away from the precursor, reacting for 1-4 hours, and naturally cooling to obtain the branched CsPbBr 3 A nanocrystalline thin film.
2. The vapor-phase growth-producing branched CsPbBr of claim 1 3 The method for preparing the nano-crystalline film is characterized in that in the step 1), CsPbBr is prepared 3 CsBr and PbBr with a molar ratio of 1:1 during single crystal growth 2 Dissolving in DMSO, and preparing to obtain CsPbBr by anti-solvent method 3 And (3) single crystal.
3. The vapor-phase growth-producing branched CsPbBr of claim 1 3 The method for preparing the nanocrystalline thin film is characterized in that in the step 2), the carrier gas in the tube furnace is Ar gas, the pressure of the carrier gas is 100mTorr, and the flow rate of the carrier gas is 18 sccm.
4. The vapor-phase growth-producing branched CsPbBr of claim 1 3 The method of the nanocrystalline thin film is characterized in that the substrate is SrTiO 3 ITO or sapphire glass.
5. The vapor-phase growth-producing branched CsPbBr of claim 4 3 A method of producing a nanocrystalline film, wherein the substrate is in the form of a 5mm x 10mm x 0.5mm piece.
6. The vapor-growth-produced branched CsPbBr according to claim 1 3 The method for preparing the nanocrystalline thin film is characterized in that in the step 2), the temperature of the tube furnace is raised to 375 ℃, and the nanocrystalline thin film is stabilized for 1 minute.
7. The vapor-phase growth-producing branched CsPbBr of claim 1 3 The method for producing a nanocrystalline thin film is characterized in that, in step 3), the operation of pushing the substrate into the heating tube is performed while the tube furnace is closed.
8. The vapor-phase growth-producing branched CsPbBr of claim 7 3 The method for preparing the nanocrystalline thin film is characterized in that a magnet is arranged outside a tube furnace, and a substrate is pushed into the tube furnace by utilizing the interaction of the magnet.
9. The method for preparing branch-shaped CsPbBr by adopting vapor phase growth as claimed in any one of claims 1 to 8 3 Branched CsPbBr prepared by method of nanocrystalline film 3 A nanocrystalline thin film.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108075020A (en) * | 2017-12-27 | 2018-05-25 | 中国科学院长春光学精密机械与物理研究所 | A kind of caesium lead halogen perovskite thin film material and a kind of light emitting diode and preparation method thereof |
| CN110886017A (en) * | 2019-11-29 | 2020-03-17 | 上海应用技术大学 | Preparation method of all-inorganic cesium-lead halogen perovskite nanocrystalline film |
| CN112750919A (en) * | 2020-12-31 | 2021-05-04 | 大连理工大学 | Heterojunction of perovskite nanowire and preparation method thereof |
| WO2022046887A1 (en) * | 2020-08-26 | 2022-03-03 | Board Of Regents, The University Of Texas System | Methods of depositing films with the same stoichiometric features as the source material |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108075020A (en) * | 2017-12-27 | 2018-05-25 | 中国科学院长春光学精密机械与物理研究所 | A kind of caesium lead halogen perovskite thin film material and a kind of light emitting diode and preparation method thereof |
| CN110886017A (en) * | 2019-11-29 | 2020-03-17 | 上海应用技术大学 | Preparation method of all-inorganic cesium-lead halogen perovskite nanocrystalline film |
| WO2022046887A1 (en) * | 2020-08-26 | 2022-03-03 | Board Of Regents, The University Of Texas System | Methods of depositing films with the same stoichiometric features as the source material |
| CN112750919A (en) * | 2020-12-31 | 2021-05-04 | 大连理工大学 | Heterojunction of perovskite nanowire and preparation method thereof |
Non-Patent Citations (3)
| Title |
|---|
| CONSTANTINOS C. STOUMPOS等: "Crystal Growth of the Perovskite Semiconductor CsPbBr3: A New Material for High-Energy Radiation Detection", CRYSTAL GROWTH & DESIGN, vol. 13, pages 2722 - 2727, XP055149023, DOI: 10.1021/cg400645t * |
| M. HIGGINS等: "Solvent-free and large area compatible deposition of methylammonium lead bromide perovskite by close space sublimation and its application in PIN diodes", THIN SOLID FILMS, vol. 692 * |
| YUAN CHEN: "Oriented Halide Perovskite Crystals", CHEMICAL REVIEWS, vol. 121, pages 12107 * |
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