CN114959658A - Heating device and chemical vapor deposition equipment - Google Patents
Heating device and chemical vapor deposition equipment Download PDFInfo
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- CN114959658A CN114959658A CN202110207618.5A CN202110207618A CN114959658A CN 114959658 A CN114959658 A CN 114959658A CN 202110207618 A CN202110207618 A CN 202110207618A CN 114959658 A CN114959658 A CN 114959658A
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 280
- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 24
- 239000000463 material Substances 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical group Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 235000012431 wafers Nutrition 0.000 description 48
- 238000000034 method Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention provides a heating device and chemical vapor deposition equipment, wherein the heating device comprises a carrying platform for holding a wafer on the carrying platform, and the carrying platform is provided with at least two heating areas; the at least two heating zones comprise a circular heating zone and at least one annular heating zone; at least one annular heating zone is arranged in concentric circles around the center of the circular heating zone. The heating device further comprises at least two heating elements which are arranged below the carrier and respectively and independently heat, the at least two heating elements are in one-to-one correspondence with the at least two heating zones, and each heating element is used for heating the heating zone corresponding to the heating element. Through at least two independent heating elements, carry out the independent heating respectively to circular zone of heating and at least one annular zone of heating, make the temperature difference between circular zone of heating and the annular zone of heating can carry out adjustment on a large scale according to chemical vapor deposition technology, make the thickness of the film that forms on the wafer surface comparatively even, improve the poor problem of film thickness uniformity.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a heating device and chemical vapor deposition equipment.
Background
Chemical Vapor Deposition (CVD) is a Chemical technology, which mainly uses one or more gaseous compounds or simple substances containing film elements to perform Chemical reaction on the surface of a wafer to form a film on the surface of the wafer. Specifically, the chemical vapor deposition equipment comprises a reaction chamber and a heating device arranged in the reaction chamber, wherein the wafer is placed on the heating device. When the reaction chamber works, reaction gas is filled into the reaction chamber, and the heating device heats the wafer at the same time, so that the reaction gas is deposited on the surface of the wafer, and a film is formed on the surface of the wafer.
The heating device in the prior art only comprises one heating element, so that the heating device cannot regulate and control the temperature of different areas of the wafer, the thickness of films formed at different parts of the surface of the wafer cannot be changed, the thickness of the films formed on the surface of the wafer is uneven, and the uniformity of the thickness of the films is poor.
Disclosure of Invention
The invention provides a heating device and chemical vapor deposition equipment, which can enable the thickness of a film formed on the surface of a wafer to be more uniform and solve the problem of poor consistency of the thickness of the film in the chemical vapor deposition process.
In a first aspect, the present invention provides a heating device for use in a chemical vapor deposition apparatus. The heating device comprises a carrier for holding the wafer thereon, and at least two heating zones are arranged on the carrier; the at least two heating zones comprise a circular heating zone and at least one annular heating zone; wherein, at least one annular heating zone is arranged around the center of the circular heating zone in concentric circles. The heating device further comprises at least two heating elements which are arranged below the carrier and respectively and independently heat, the at least two heating elements are in one-to-one correspondence with the at least two heating zones, and each heating element is used for heating the heating zone corresponding to the heating element.
In the above scheme, a circular heating area and at least one annular heating area are divided on the carrier, at least two heating elements which are independently heated are arranged, the circular heating area and the annular heating area are independently heated, and the temperatures of the circular heating area and the annular heating area can be reasonably controlled by adjusting the temperatures of different heating elements during application. Compared with the mode that adopts a heating element to heat among the prior art, the scheme of this application can carry out the independent heating respectively through at least two independent heating elements to circular zone of heating and at least one annular zone of heating, makes the temperature difference between circular zone of heating and at least one annular zone of heating can carry out adjustment on a relatively large scale according to chemical vapor deposition technology to better heat the wafer, make the thickness of forming at the film on wafer surface comparatively even, improve the relatively poor problem of film thickness uniformity. And through setting up a plurality of heating zones, can make the temperature difference between two adjacent heating zones less, make the temperature difference of a plurality of heating zones pull open gradually to prevent that the difference in temperature of two adjacent heating zones is great and arouse the wafer to burst apart.
In one embodiment, the circular heating zone is the upper end surface of the disc structure; the at least two annular heating zones are the upper end faces of the circular ring structures, and the at least two circular ring structures are arranged around the center of the disc structure in a concentric circle mode. The heating zones are formed by adopting the upper end surfaces of the disc structure and the circular ring structure, so that different heating zones can be divided.
In one embodiment, the material of the disk structure and the ring structure is aluminum nitride, aluminum, SUS316, SUS314, or SUS316L, so as to improve the thermal conductivity of the disk structure and the ring structure and improve the heating effect on the wafer.
In a particular embodiment, there is no gap between the side wall of the disc structure and the inner wall of the ring structure located at the innermost turn. Between any two adjacent circular ring structures, no gap exists between the outer wall of the circular ring structure positioned on the inner ring and the inner wall of the circular ring structure positioned on the outer ring.
In a specific embodiment, the distance between the side wall of the disc structure and the inner wall of the ring structure positioned at the innermost circle is 0.1 mm-10 cm. And between any two adjacent circular ring structures, the distance between the outer wall of the circular ring structure positioned on the inner ring and the inner wall of the circular ring structure positioned on the outer ring is 0.1 mm-10 cm.
In a particular embodiment, the side wall of the disc structure is spaced from the inner wall of the ring structure located at the innermost turn by a distance d 1. Between any two adjacent circular ring structures, the distances d1 between the outer wall of the circular ring structure positioned at the inner ring and the inner wall of the circular ring structure positioned at the outer ring are equal, and d1 is d 2.
In a particular embodiment, the disk structure is flush with an upper end surface of the at least one ring structure such that a wafer placed over the stage is in thermally conductive contact with both of the at least two heating zones.
In a specific embodiment, the number of the at least two heating zones is 2-10, so as to simplify the structure of the heating zones.
In a specific embodiment, the temperature control range of each heating zone in the at least two heating zones is 50-700 ℃.
In a second aspect, the present invention also provides a chemical vapor deposition apparatus comprising any one of the heating devices described above. The circular heating area and the at least one annular heating area are divided on the carrier, at least two heating elements which are independently heated respectively are arranged, the circular heating area and the annular heating area are independently heated respectively, and when the heating device is applied, the temperatures of the circular heating area and the annular heating area can be reasonably controlled by adjusting the temperatures of different heating elements. Compared with the mode that adopts a heating element to heat among the prior art, the scheme of this application can carry out the independent heating respectively through at least two independent heating elements to circular zone of heating and at least one annular zone of heating, makes the temperature difference between circular zone of heating and at least one annular zone of heating can carry out adjustment on a relatively large scale according to chemical vapor deposition technology to better heat the wafer, make the thickness of forming at the film on wafer surface comparatively even, improve the relatively poor problem of film thickness uniformity. And through setting up a plurality of zone of heating, can make the temperature difference between two adjacent zones of heating less, make the temperature difference of a plurality of zones of heating pull open gradually to prevent that the difference in temperature of two adjacent zones of heating is great and arouse the wafer to burst apart.
Drawings
Fig. 1 is a schematic cross-sectional structural diagram of a heating apparatus according to an embodiment of the present invention;
fig. 2 is a schematic top view of a heating device according to an embodiment of the present invention.
Reference numerals are as follows:
10-wafer 11-circular heating zone 12-annular heating zone
21-disc structure 22-ring structure 30-heating element
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
To facilitate understanding of the heating apparatus provided in the embodiment of the present invention, an application scenario of the heating apparatus provided in the embodiment of the present invention is first described below, where the heating apparatus is used in a chemical vapor deposition apparatus to heat a wafer during a chemical vapor deposition process. The heating device will be described in detail with reference to the accompanying drawings.
Referring to fig. 1 and 2, a heating apparatus provided by an embodiment of the present invention includes a stage for holding a wafer 10 thereon, the stage having at least two heating zones thereon; the at least two heating zones comprise a circular heating zone 11, and at least one annular heating zone 12; wherein, at least one annular heating zone 12 is arranged in concentric circles around the center of the circular heating zone 11. The heating device further comprises at least two heating elements which are arranged below the carrier and respectively and independently heat, the at least two heating elements are in one-to-one correspondence with the at least two heating zones, and each heating element is used for heating the heating zone corresponding to the heating element.
In the above scheme, a circular heating area 11 and at least one annular heating area 12 are divided on the carrier, at least two heating elements which are independently heated are arranged, the circular heating area 11 and the annular heating area 12 are independently heated, and when the circular heating area 11 and the annular heating area 12 are applied, the temperatures of the circular heating area 11 and the annular heating area 12 can be reasonably controlled by adjusting the temperatures of different heating elements. Compared with the mode of heating by adopting one heating element in the prior art, the scheme of the application can respectively and independently heat the circular heating area 11 and the at least one annular heating area 12 through at least two independent heating elements, so that the temperature difference between the circular heating area 11 and the at least one annular heating area 12 can be adjusted in a larger range according to the chemical vapor deposition process, the wafer 10 is better heated, the thickness of the film formed on the surface of the wafer 10 is more uniform, and the problem of poor consistency of the thickness of the film is improved. And through setting up a plurality of heating zones, can make the temperature difference between two adjacent heating zones less, make the temperature difference of a plurality of heating zones pull open gradually to prevent that the difference in temperature of two adjacent heating zones is great and arouse wafer 10 to burst apart. The above components will be described in detail with reference to the accompanying drawings.
When the stage is disposed, as shown in fig. 1 and 2, at least two heating zones are disposed on the stage, the at least two heating zones include a circular heating zone 11 and at least one annular heating zone 12, and the at least one annular heating zone 12 is arranged around the center of the circular heating zone 11 in a concentric circle. Namely, the heating zone comprises a circular heating zone 11 positioned at the center, the circular heating zone 11 is circular, and at least one annular heating zone 12 positioned around the circular heating zone 11, and the at least one annular heating zone 12 surrounds the circular heating zone 11 and is distributed in concentric circles around the center of the circular heating zone 11. In use, referring to fig. 1, a wafer 10 is placed on at least two heating zones, the wafer 10 is carried by the at least two heating zones, and the wafer 10 can be heated. And at least two heating zones are heated by different heating elements respectively, so that the heating temperatures of different heating elements can be adjusted to adjust the temperatures of the corresponding heating zones, thereby adjusting the heating temperatures of different areas of the wafer 10. During the chemical vapor deposition, the temperatures of the different heating zones can be adjusted according to the amount of gas in the chemical vapor deposition process or the specific position of the nozzle, thereby ensuring that the thickness of the film formed on the surface of the wafer 10 is relatively uniform. Specifically, because the heat dissipation at the edge of the wafer 10 is fast, the heat dissipation at the central position is slow, so that the heating temperature of the heating area at the edge is higher, and the heating temperature of the heating area at the central position is lower, thereby overcoming the phenomenon that the thickness of the central position of the film is thick and the thickness of the edge position is thin under the normal condition, and improving the problem of poor consistency of the film thickness. And the temperature difference between the edge position and the central position of the wafer 10 is gradually pulled through the heating zones, so that the wafer 10 is prevented from cracking due to large local temperature difference.
When the temperature of each heating area is specifically determined, the temperature control range of each heating area in at least two heating areas can be 50-700 ℃, and the temperature can be specifically adjusted to different temperatures according to different heating areas. That is, the temperature of each heating zone may be controlled to any value between 50 ℃ and 700 ℃, such as 50 ℃, 100 ℃, 150 ℃, 200 ℃, 250 ℃, 300 ℃, 350 ℃, 400 ℃, 450 ℃, 500 ℃, 550 ℃, 600 ℃, 650 ℃, 700 ℃ and the like. The temperature of different heating zones can be adjusted by adjusting different heating elements.
When the number of the heating zones is determined, the number of the at least two heating zones can be 2-10, specifically, the number of the heating zones can be 2, 3, 4, 5, 6, 7, 8, 9 and 10, so that the structure of the heating zones is simplified. When using, can gradually pull open the temperature difference of wafer 10 border position and central point through increasing the number in zone of heating, make the heating temperature difference of two adjacent zones of heating less to the temperature difference that makes the wafer 10 position that two adjacent zones of heating correspond is less, can finely tune the temperature of wafer 10 different positions, in order to improve the heating effect to wafer 10, and prevents that wafer 10 local difference in temperature is great and arouse wafer 10 to burst apart the phenomenon.
When the circular heating area 11 is provided, as shown in fig. 1 and 2, a heat-conducting disc structure 21 may be provided, and an upper end surface of the disc structure 21 serves as the circular heating area 11. When each annular heating area 12 is provided, a heat-conducting ring structure 22 may be provided, and each annular heating area 12 is an upper end face of the ring structure 22. And at least two ring structures 22 are arranged in concentric circles around the center of the disc structure 21. By using the upper end surfaces of the disc structure 21 and the ring structure 22, heating zones are formed so as to divide different heating zones.
When the arrangement of the disc structure 21 and the ring structure 22 is realized, the distance between the side wall of the disc structure 21 and the inner wall of the ring structure 22 located at the innermost circle may be 0.1mm to 10cm, and specifically, the distance between the side wall of the disc structure 21 and the inner wall of the ring structure 22 located at the innermost circle may be 0.1mm, 0.5mm, 1.0mm, 2.0mm, 3.0mm, 4.0mm, 5.0mm, 6.0mm, 7.0mm, 8.0mm, 9.0mm, 10.0mm, 20.0mm, 30.0mm, 40.0mm, 50.0mm, 60.0mm, 70.0mm, 80.0mm, 90.0mm, 100.0mm, or the like, and may be any value between 0.1mm to 10 cm. Between any two adjacent circular ring structures 22, the distance between the outer wall of the circular ring structure 22 located in the inner ring and the inner wall of the circular ring structure 22 located in the outer ring is 0.1mm to 10cm, and specifically, the distance between the outer wall of the circular ring structure 22 located in the inner ring and the inner wall of the circular ring structure 22 located in the outer ring may be 0.1mm, 0.5mm, 1.0mm, 2.0mm, 3.0mm, 4.0mm, 5.0mm, 6.0mm, 7.0mm, 8.0mm, 9.0mm, 10.0mm, 20.0mm, 30.0mm, 40.0mm, 50.0mm, 60.0mm, 70.0mm, 80.0mm, 90.0mm, 100.0mm, or the like, and may be any value between 0.1mm to 10 cm. Namely, a small gap exists between the disk structure 21 and one adjacent ring structure 22, and a small gap also exists between any two ring structures 22, so that a small gap exists between two adjacent heating regions to serve as a transition region between two adjacent heating regions, and a large local temperature difference of the wafer 10 is prevented.
In determining the gap between the disc structure 21 and the ring structure 22, referring to fig. 1 and 2, the distance between the side wall of the disc structure 21 and the inner wall of the ring structure 22 located at the innermost circle is named d 1; between any two adjacent circular ring structures 22, the distance between the outer wall of the circular ring structure 22 located at the inner ring and the inner wall of the circular ring structure 22 located at the outer ring is d 1. The distance between the outer wall of the ring structure 22 located at the inner ring and the inner wall of the ring structure 22 located at the outer ring between any two adjacent ring structures 22 can be equal. And d1 ═ d2 may also be used. Even if the radial spacing between any two adjacent structures is equal in magnitude. It should be understood that the spacing between two adjacent ring structures 22 may also be unequal, and the spacing between the disc structure 21 and the adjacent ring structure 22 may also be unequal to the spacing between the ring structures 22. When the size of the gap between two adjacent structures is specifically determined, the size can be determined according to the temperature difference between the two adjacent structures, and if the temperature difference is larger, the gap can be set to be larger; if the temperature difference is small, a small gap can be set.
Of course, it is also possible to have no gap between the side wall of the disc structure 21 and the inner wall of the ring structure 22 located at the innermost circle; between any two adjacent circular ring structures 22, there is no gap between the outer wall of the circular ring structure 22 located at the inner ring and the inner wall of the circular ring structure 22 located at the outer ring. I.e. the disc structure 21 is arranged in close proximity to the adjacent ring structure 22 without gaps. Adjacent two ring structures 22 are also disposed immediately adjacent to each other without a gap.
As shown in fig. 1, the disc structure 21 may be flush with the upper end surface of the at least one ring structure 22, i.e. the plurality of heating zones are all in the same plane, so that the wafer 10 placed above the stage is in heat-conducting contact with at least two heating zones. Of course, it is also possible to have a height difference between different heating zones, and the heating temperature at different wafers 10 can be adjusted by adjusting the height difference between different heating zones.
When the materials of the disk structure 21 and the ring structure 22 are specifically determined, the materials of the disk structure 21 and the ring structure 22 may be aluminum nitride, aluminum, SUS316, SUS314, or SUS316L, so as to improve the thermal conductivity of the disk structure 21 and the ring structure 22 and improve the heating effect on the wafer 10.
When the heating elements are specifically arranged, referring to fig. 1, the number of the heating elements is equal to the number of the heating zones, and each heating element corresponds to one heating zone, and each heating element is used for heating the corresponding heating zone. Each heating element, when provided, is conventional in the art and may be, for example, a radio frequency heating element.
The circular heating area 11 and the at least one annular heating area 12 are divided on the carrier, at least two heating elements which are respectively and independently heated are arranged, the circular heating area 11 and the annular heating area 12 are respectively and independently heated, and when the heating device is applied, the temperatures of the circular heating area 11 and the annular heating area 12 can be reasonably controlled by adjusting the temperatures of different heating elements. Compared with the mode of heating by adopting one heating element in the prior art, the scheme of the application can respectively and independently heat the circular heating area 11 and the at least one annular heating area 12 through at least two independent heating elements, so that the temperature difference between the circular heating area 11 and the at least one annular heating area 12 can be adjusted in a larger range according to the chemical vapor deposition process, the wafer 10 is better heated, the thickness of the film formed on the surface of the wafer 10 is more uniform, and the problem of poor consistency of the thickness of the film is improved. And through setting up a plurality of heating zones, can make the temperature difference between two adjacent heating zones less, make the temperature difference of a plurality of heating zones pull open gradually to prevent that the difference in temperature of two adjacent heating zones is great and arouse wafer 10 to burst apart.
In addition, the embodiment of the invention also provides chemical vapor deposition equipment which comprises any one of the heating devices. The circular heating area 11 and the at least one annular heating area 12 are divided on the carrier, at least two heating elements which are respectively and independently heated are arranged, the circular heating area 11 and the annular heating area 12 are respectively and independently heated, and when the heating device is applied, the temperatures of the circular heating area 11 and the annular heating area 12 can be reasonably controlled by adjusting the temperatures of different heating elements. Compared with the mode of heating by adopting one heating element in the prior art, the scheme of the application can respectively and independently heat the circular heating area 11 and the at least one annular heating area 12 through at least two independent heating elements, so that the temperature difference between the circular heating area 11 and the at least one annular heating area 12 can be adjusted in a larger range according to the chemical vapor deposition process, the wafer 10 is better heated, the thickness of the film formed on the surface of the wafer 10 is more uniform, and the problem of poor consistency of the thickness of the film is improved. And through setting up a plurality of heating zones, can make the temperature difference between two adjacent heating zones less, make the temperature difference of a plurality of heating zones pull open gradually to prevent that the difference in temperature of two adjacent heating zones is great and arouse wafer 10 to burst apart.
The above description is only for the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. A heating device applied to chemical vapor deposition equipment is characterized by comprising:
a stage for holding a wafer thereon, the stage having at least two heating zones thereon; the at least two heating zones comprise a circular heating zone and at least one annular heating zone; wherein the at least one annular heating zone is arranged in concentric circles around the center of the circular heating zone;
the heating device comprises at least two heating elements which are arranged below the carrier and respectively and independently heated, wherein the at least two heating elements are in one-to-one correspondence with the at least two heating zones, and each heating element is used for heating the heating zone corresponding to the heating element.
2. The heating apparatus of claim 1, wherein the circular heating zone is an upper end surface of a disk structure; the at least two annular heating zones are the upper end faces of the circular ring structures, and the at least two circular ring structures are arranged in concentric circles around the center of the disc structure.
3. The heating apparatus as claimed in claim 2, wherein the material of the disk structure and the ring structure is aluminum nitride, aluminum, SUS316, SUS314, or SUS 316L.
4. A heating device as claimed in claim 2, wherein there is no gap between the side wall of the disc structure and the inner wall of the ring structure located at the innermost turn;
between any two adjacent circular ring structures, no gap exists between the outer wall of the circular ring structure positioned on the inner ring and the inner wall of the circular ring structure positioned on the outer ring.
5. The heating device of claim 2, wherein the distance between the side wall of the disc structure and the inner wall of the ring structure positioned at the innermost circle is 0.1 mm-10 cm;
and between any two adjacent circular ring structures, the distance between the outer wall of the circular ring structure positioned on the inner ring and the inner wall of the circular ring structure positioned on the outer ring is 0.1 mm-10 cm.
6. A heating device as claimed in claim 5, wherein the side walls of the disc structure are spaced from the inner wall of the ring structure at the innermost turn by a distance d 1;
between any two adjacent circular ring structures, the distances d2 between the outer wall of the circular ring structure positioned at the inner ring and the inner wall of the circular ring structure positioned at the outer ring are equal, and d1 is d 2.
7. A heating device as claimed in claim 2, wherein the disc formation is flush with the upper end face of the at least one annular formation.
8. The heating apparatus as claimed in claim 1, wherein the number of the at least two heating zones is 2 to 10.
9. The heating apparatus as claimed in claim 2, wherein the temperature control range of each of the at least two heating zones is 50 to 700 ℃.
10. A chemical vapor deposition apparatus comprising the heating device according to any one of claims 1 to 9.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110207618.5A CN114959658A (en) | 2021-02-24 | 2021-02-24 | Heating device and chemical vapor deposition equipment |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110207618.5A CN114959658A (en) | 2021-02-24 | 2021-02-24 | Heating device and chemical vapor deposition equipment |
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| CN114959658A true CN114959658A (en) | 2022-08-30 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115442927A (en) * | 2022-11-04 | 2022-12-06 | 上海星原驰半导体有限公司 | Composite temperature control disc |
| CN115506012A (en) * | 2022-09-30 | 2022-12-23 | 江苏第三代半导体研究院有限公司 | Reactor for preparing epitaxial wafer, preparation method and application |
| CN115505897A (en) * | 2022-09-22 | 2022-12-23 | 江苏第三代半导体研究院有限公司 | Rotating disc type reactor for preparing epitaxial wafer, preparation method and application |
| CN117393474A (en) * | 2023-12-11 | 2024-01-12 | 上海谙邦半导体设备有限公司 | Wafer multizone heating device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115505897A (en) * | 2022-09-22 | 2022-12-23 | 江苏第三代半导体研究院有限公司 | Rotating disc type reactor for preparing epitaxial wafer, preparation method and application |
| CN115505897B (en) * | 2022-09-22 | 2023-10-31 | 江苏第三代半导体研究院有限公司 | Turntable type reactor for preparing epitaxial wafer, preparation method and application |
| CN115506012A (en) * | 2022-09-30 | 2022-12-23 | 江苏第三代半导体研究院有限公司 | Reactor for preparing epitaxial wafer, preparation method and application |
| CN115442927A (en) * | 2022-11-04 | 2022-12-06 | 上海星原驰半导体有限公司 | Composite temperature control disc |
| CN115442927B (en) * | 2022-11-04 | 2023-03-10 | 上海星原驰半导体有限公司 | Composite temperature control disc |
| CN117393474A (en) * | 2023-12-11 | 2024-01-12 | 上海谙邦半导体设备有限公司 | Wafer multizone heating device |
| CN117393474B (en) * | 2023-12-11 | 2024-02-13 | 上海谙邦半导体设备有限公司 | Wafer multizone heating device |
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