CN114944823A - Low-noise amplifier - Google Patents
Low-noise amplifier Download PDFInfo
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- CN114944823A CN114944823A CN202210797709.3A CN202210797709A CN114944823A CN 114944823 A CN114944823 A CN 114944823A CN 202210797709 A CN202210797709 A CN 202210797709A CN 114944823 A CN114944823 A CN 114944823A
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- 239000003990 capacitor Substances 0.000 claims abstract description 59
- 230000003321 amplification Effects 0.000 claims abstract description 23
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 23
- 230000008878 coupling Effects 0.000 claims abstract description 5
- 238000010168 coupling process Methods 0.000 claims abstract description 5
- 238000005859 coupling reaction Methods 0.000 claims abstract description 5
- 238000002955 isolation Methods 0.000 claims abstract description 5
- 239000000126 substance Substances 0.000 claims description 2
- 230000007423 decrease Effects 0.000 claims 2
- 230000000694 effects Effects 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 230000001965 increasing effect Effects 0.000 description 7
- 230000008859 change Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
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- 238000010586 diagram Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
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- 102100037224 Noncompact myelin-associated protein Human genes 0.000 description 1
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- 230000005540 biological transmission Effects 0.000 description 1
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- 229910044991 metal oxide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers
- H03G3/20—Automatic control
- H03G3/30—Automatic control in amplifiers having semiconductor devices
- H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
The invention discloses a low noise amplifier, comprising: bias current control module, MOS tubes NM 0-NM 4, capacitors C1, C2, C4, inductors L1, L2, resistors R1 and R2; the capacitors C1, C2, the resistors R1 and R2 form radio frequency signal alternating current isolation coupling; the bias current control module is used for controlling working currents of the MOS transistors NM 0-NM 4, and the capacitor C4 and the MOS transistor NM0 generate bias currents so that the MOS transistors NM 0-NM 4 work in an amplification region; the inductor L1 and the inductor L2 amplify the high frequency signal. The invention solves the problems of adjustable gain, adjustable impedance matching and consistent noise performance of the low-noise amplifier, ensures the wide dynamic range, low noise and optimal matching effect of the LNA, effectively improves the signal amplification effect of the LNA and the consistency of chips, and thus can meet the requirement of mass production under the condition of consistent performance.
Description
Technical Field
The invention relates to the field of low-noise radio frequency amplification and the technical field of microelectronics, in particular to a low-noise amplifier.
Background
In the rf transceiver chip, a Low Noise Amplifier (LNA) is required to amplify a received weak rf signal so as to demodulate and recover the transmitted signal, but the integrated amplifier often causes a change in the characteristics (such as amplification factor, linearity, etc.) of the amplifier due to a deviation of the production process or a change in the carrier frequency, so that the integrated LNA is required to adjust the center frequency and the gain so as to ensure that the LNA operates in an optimal state (such as gain, linearity, etc.).
The LNA integrated inside the chip usually adopts the integrated inductor as the load impedance, but due to the production process, the inductance value of the integrated inductor of each chip cannot be guaranteed to be consistent, if the inductance value of the inductor changes, the gain changes, and if the gain changes too low, the receiving sensitivity is affected. If the signal is too high, the dynamic range of the input signal is narrowed, overload can occur when some large signals are input, the saturation phenomenon occurs, and the error rate is improved. Therefore, it is necessary to design a gain control circuit to control the gain of the LNA within a certain range.
The NF (noise figure) of the LNA needs to be taken into consideration in the LNA gain adjustment process, and it is necessary to suppress noise of the adjusting circuit.
When the LNA amplifies, impedance matching of the received radio frequency signal needs to be considered, and only when the impedance of the radio frequency signal is matched, energy and signal integrity of the transmission signal are optimal. The input terminal can adjust the impedance to achieve a near ideal matching effect.
Disclosure of Invention
The invention mainly aims to provide a low-noise amplifier, which aims to solve the problems of adjustable gain, adjustable impedance matching and consistent noise performance of the low-noise amplifier, ensure the wide dynamic range, low noise and optimal matching effect of an LNA (low-noise amplifier), effectively improve the signal amplification effect of the LNA and the consistency of chips, and meet the requirement of mass production under the condition of consistent performance.
To achieve the above object, the present invention provides a low noise amplifier comprising: the device comprises a bias current control module, a MOS transistor NM0, a MOS transistor NM1, a MOS transistor NM2, a MOS transistor NM3, a MOS transistor NM4, a capacitor C1, a capacitor C2, a capacitor C4, an inductor L1, an inductor L2, a resistor R1 and a resistor R2;
the capacitor C1, the capacitor C2, the resistor R1 and the resistor R2 form radio frequency signal alternating current isolation coupling; the bias current control module is used for controlling working currents of the MOS tube NM0, the MOS tube NM1, the MOS tube NM2, the MOS tube NM3 and the MOS tube NM4, and the capacitor C4 and the MOS tube NM0 generate bias currents, so that the MOS tube NM0, the MOS tube NM1, the MOS tube NM2, the MOS tube NM3 and the MOS tube NM4 work in an amplification region; the inductor L1 and the inductor L2 amplify high frequency signals.
The further technical scheme of the invention is that when the amplified signal amplitude is too large, the bias current control module reduces the current of the MOS tube NM0 to reduce the amplification factor, and when the amplified signal amplitude is too small, the bias current control module increases the current of the MOS tube NM0 to increase the amplification factor.
The further technical scheme of the invention is that the invention also comprises a capacitor C3, a capacitor C5, a capacitor C6, a resistor R3 and a resistor R4; wherein the content of the first and second substances,
the bias current control module is connected with one end of the capacitor C3, one end of the resistor R1, one end of the resistor R2, one end of the capacitor C4, the gate of the MOS transistor NM0, the gate of the MOS transistor NM3 and the gate of the MOS transistor NM4, the other end of the capacitor C3 is grounded, the other end of the resistor R1 is connected with one end of the capacitor C1 and the gate of the MOS transistor NM1, the other end of the capacitor C1 inputs the radio frequency signal RF +, the other end of the resistor R2 is connected with one end of the capacitor C2 and the gate of the MOS transistor NM2, the other end of the capacitor C2 inputs the radio frequency signal RF-, the other end of the capacitor C4 and the source of the MOS transistor NM0 are grounded, the drain of the MOS transistor NM0 is connected between the source of the MOS transistor NM1 and the source of the MOS transistor NM2, the drain of the MOS transistor NM1 is connected with the source of the MOS transistor NM3 and the drain of the resistor R3, the drain of the MOS transistor NM2 is connected with the source 4 and the source of the MOS transistor NM 393956, Resistance R4 one end is connected, resistance R4 the other end electron R3 the other end respectively with electric capacity C5's one end is connected, electric capacity C5's other end ground connection, electric capacity C6 connect in between MOS pipe NM3, the grid of MOS pipe NM4, MOS pipe NM 3's drain respectively with inductance L1's one end, V0-are connected, MOS pipe NM 4's drain respectively with inductance L2's one end, V0+ are connected, the VCC is connected to inductance L1, inductance L2's the other end.
The low-noise amplifier has the beneficial effects that: the invention solves the problems of adjustable gain, adjustable impedance matching and consistent noise performance of the low-noise amplifier, ensures the wide dynamic range, low noise and optimal matching effect of the LNA, effectively improves the signal amplification effect of the LNA and the consistency of chips, and thus can meet the requirement of mass production under the condition of consistent performance.
Drawings
FIG. 1 is a schematic diagram of a preferred embodiment of a low noise amplifier according to the present invention;
FIG. 2 is a schematic diagram of the low noise amplifier gain control response process of the present invention;
fig. 3 is a schematic diagram of a bias current control module.
The implementation, functional features and advantages of the present invention will be further described with reference to the accompanying drawings.
Detailed Description
It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
As shown in fig. 1, the present invention provides a low noise amplifier, and the preferred embodiment of the low noise amplifier of the present invention includes a bias current control module, a MOS transistor NM0, a MOS transistor NM1, a MOS transistor NM2, a MOS transistor NM3, a MOS transistor NM4, a capacitor C1, a capacitor C2, a capacitor C4, an inductor L1, an inductor L2, a resistor R1, and a resistor R2.
The capacitor C1, the capacitor C2, the resistor R1 and the resistor R2 form radio frequency signal alternating current isolation coupling; the bias current control module is used for controlling working currents of the MOS tube NM0, the MOS tube NM1, the MOS tube NM2, the MOS tube NM3 and the MOS tube NM4, and the capacitor C4 and the MOS tube NM0 generate bias currents, so that the MOS tube NM0, the MOS tube NM1, the MOS tube NM2, the MOS tube NM3 and the MOS tube NM4 work in an amplification region.
The inductor L1 and the inductor L2 amplify a high frequency signal, specifically, an on-chip inductor, which is an inductive load with a high Q value in a specific frequency range, and form a common-gate amplifier with NM3 and NM4, respectively, to amplify and filter an input ac signal.
Further, in this embodiment, the low noise amplifier further includes a capacitor C3, a capacitor C5, a capacitor C6, a resistor R3, and a resistor R4.
Wherein, the bias current control module is connected to one end of the capacitor C3, one end of the resistor R1, one end of the resistor R2, one end of the capacitor C4, the gate of the MOS transistor NM0, the MOS transistor NM3 and the gate of the MOS transistor NM4, the other end of the capacitor C3 is grounded, the other end of the resistor R1 is connected to one end of the capacitor C1 and the gate of the MOS transistor NM1, the other end of the capacitor C1 inputs the RF signal, the other end of the resistor R2 is connected to one end of the capacitor C2 and the gate of the MOS transistor NM2, the other end of the capacitor C2 inputs the RF signal, the other end of the capacitor C4 and the source of the MOS transistor NM0 are grounded, the drain of the MOS transistor NM0 is connected between the MOS transistor NM1 and the source of the MOS transistor NM2, the drain of the MOS transistor 1 is connected to the source of the MOS transistor NM1 and the drain of the transistor NM1, and the drain of the transistor NM1 are connected to the source 1, Resistance R4 one end is connected, resistance R4 the other end electron R3 the other end respectively with electric capacity C5's one end is connected, electric capacity C5's other end ground connection, electric capacity C6 connect in between MOS pipe NM3, the grid of MOS pipe NM4, MOS pipe NM 3's drain respectively with inductance L1's one end, V0-are connected, MOS pipe NM 4's drain respectively with inductance L2's one end, V0+ are connected, the VCC is connected to inductance L1, inductance L2's the other end.
In this embodiment, the capacitor C1, the capacitor C2, the resistor R1, and the resistor R2 constitute an ac isolation coupling and impedance matching for radio frequency signals, and the capacitor C4 and the MOS transistor NM0 generate bias currents, so that the MOS transistor NM1, the MOS transistor NM2, the MOS transistor NM3, and the MOS transistor NM4 for amplification work in an amplification region, the inductor L1 and the inductor L2 are ac loads of differential amplification pair transistors, and amplify high frequency signals, and the bias current control module completes conversion of digital control signals into bias voltages Vbias1, Vbias2, VDC, and realizes programming controllability.
Radio frequency signals are isolated and directly coupled to the grids of the N-type MOS tube NM1 and the N-type MOS tube NM2 from RF +, RF-through the capacitor C1 and the capacitor C2, the N-type MOS tube NM1 and the N-type MOS tube NM2 form a differential common source amplifier, the input of the N-type MOS tube NM1 and the input of the N-type MOS tube NM2 are amplified for the first time, and the amplified signals are respectively sent to the sources of the N-type MOS tube NM3 and the N-type MOS tube NM 4. The grid electrodes of the N-type MOS tube NM3 and the N-type MOS tube NM4 are connected with fixed voltage to form a common-grid amplifier, and the inductor L1 and the inductor L2 are loads to form secondary amplification of radio-frequency signals. This completes the amplification of the input signal.
The bias current control module can control the working currents of the MOS tube NM0, the MOS tube NM1, the MOS tube NM2, the MOS tube NM3 and the MOS tube NM4, and can change the integral amplification factor. When the amplitude of the amplified signal is too large, the amplification factor can be reduced by reducing the current. On the contrary, if the amplitude of the amplified signal is not large enough, the current is increased, so that the amplification factor is increased.
Specifically, as shown in fig. 3, Iref is a reference current input, and the P-type MOS transistors MP0 to MP7 and the control switch D <7:0> form an 8-bit DAC, wherein the ratio of the width-to-length ratios of the P-type MOS transistors MP0 to MP7 is 1/4:1/2:1:2:4:8:16:32, and an 8-bit 2-ary weighting is combined, so that the on and off of the switches are controlled by changing the control level value of D <7:0>, the magnitude change of the bias current of the N-type MOS transistor MN0 is realized, the voltage of Vbias is adjusted, the digital-to-analog conversion is completed, and the programming controllability of the bias current is realized.
In fig. 3, a current of the P-type MOS transistor MP10 passes through the N-type MOS transistor MN1 to generate a bias voltage VDC, and a current of the P-type MOS transistor MP11 passes through the N-type MOS transistor MN2 and MN3 to generate a bias voltage Vbias 2.
The inventive lna gain control response process is shown in fig. 2.
Firstly, judging whether an input signal is too large or too small, if so, reducing a value D, wherein the value D is a bias voltage control 8-bit weighted digital control signal, the range is 0x 00-0 x7F, reducing Vbias, reducing the current of an MOS (metal oxide semiconductor) transistor NM0, reducing the transconductance of a differential pair MOS transistor NM1, reducing the gain of a low-noise amplifier, if not, increasing the value D, increasing the Vbias, increasing the current of the MOS transistor NM0, increasing the transconductance of the differential pair MOS transistor NM1, and increasing the gain of the low-noise amplifier.
The low-noise amplifier has the beneficial effects that:
the invention solves the problems of adjustable gain, adjustable impedance matching and consistent noise performance of the low-noise amplifier, ensures the wide dynamic range, low noise and optimal matching effect of the LNA, effectively improves the signal amplification effect of the LNA and the consistency of chips, and thus can meet the requirement of mass production under the condition of consistent performance.
The above description is only a preferred embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications of equivalent structures and equivalent processes, which are made by using the contents of the present specification and the accompanying drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (3)
1. A low noise amplifier, comprising: bias current control module, MOS transistor NM0, MOS transistor NM1, MOS transistor NM2, MOS transistor NM3, MOS transistor NM4, capacitor C1, capacitor C2, capacitor C4, inductor L1, inductor L2, resistor R1 and resistor R2;
the capacitor C1, the capacitor C2, the resistor R1 and the resistor R2 form radio frequency signal alternating current isolation coupling;
the bias current control module is used for controlling working currents of the MOS tube NM0, the MOS tube NM1, the MOS tube NM2, the MOS tube NM3 and the MOS tube NM4 and controlling the capacitor C4 and the MOS tube NM0 to generate bias currents, so that the MOS tube NM0, the MOS tube NM1, the MOS tube NM2, the MOS tube NM3 and the MOS tube NM4 work in an amplification region;
the inductor L1 and the inductor L2 are used for amplifying high-frequency signals in the amplification region.
2. The lna of claim 1, wherein the bias current control module decreases the current of the MOS transistor NM0 so that the amplification factor decreases when the amplified signal amplitude is too large, and increases the current of the MOS transistor NM0 so that the amplification factor increases when the amplified signal amplitude is too small.
3. The low noise amplifier of claim 1, further comprising a capacitor C3, a capacitor C5, a capacitor C6, a resistor R3, and a resistor R4; wherein the content of the first and second substances,
the bias current control module is connected with one end of the capacitor C3, one end of the resistor R1, one end of the resistor R2, one end of the capacitor C4, the gate of the MOS transistor NM0, the MOS transistor NM3 and the gate of the MOS transistor NM4, the other end of the capacitor C3 is grounded, the other end of the resistor R1 is connected with one end of the capacitor C1 and the gate of the MOS transistor NM1, the other end of the capacitor C1 is input with a radio frequency signal RF +, the other end of the resistor R2 is connected with one end of the capacitor C2 and the gate of the MOS transistor NM2, the other end of the capacitor C2 is input with a radio frequency signal RF-, the other end of the capacitor C4 and the source of the MOS transistor NM0 are grounded, the drain of the MOS transistor NM0 is connected between the sources of the MOS transistor NM1 and the MOS transistor NM2, the drain of the MOS transistor NM1, the drain of the MOS transistor NM3 and the drain of the resistor R3 are connected, the drain of the MOS transistor NM2 is connected with the source of the source 4 and the drain of the MOS transistor NM 6342, Resistance R4 one end is connected, resistance R4 the other end resistance R3 the other end respectively with electric capacity C5's one end is connected, electric capacity C5's other end ground connection, electric capacity C6 connect in between MOS pipe NM3, the grid of MOS pipe NM4, MOS pipe NM 3's drain respectively with inductance L1's one end, V0-are connected, MOS pipe NM 4's drain respectively with inductance L2's one end, V0+ are connected, the VCC is connected to inductance L1, inductance L2's the other end.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210797709.3A CN114944823A (en) | 2022-07-08 | 2022-07-08 | Low-noise amplifier |
| CN202222862793.0U CN219459022U (en) | 2022-07-08 | 2022-10-28 | Low noise amplifier |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210797709.3A CN114944823A (en) | 2022-07-08 | 2022-07-08 | Low-noise amplifier |
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| CN114944823A true CN114944823A (en) | 2022-08-26 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202210797709.3A Pending CN114944823A (en) | 2022-07-08 | 2022-07-08 | Low-noise amplifier |
| CN202222862793.0U Active CN219459022U (en) | 2022-07-08 | 2022-10-28 | Low noise amplifier |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202222862793.0U Active CN219459022U (en) | 2022-07-08 | 2022-10-28 | Low noise amplifier |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070024377A1 (en) * | 2005-07-28 | 2007-02-01 | Xuezhen Wang | Impedance matching techiques for multi-band or wideband RF amplifiers and associated amplifier designs |
| CN102790593A (en) * | 2012-08-08 | 2012-11-21 | 江苏物联网研究发展中心 | Parallel-resistance feedback differential low-noise amplifier |
| CN202652152U (en) * | 2012-05-15 | 2013-01-02 | 无锡中科微电子工业技术研究院有限责任公司 | Output power adjustable circuit of radio frequency power amplifier |
| CN109716648A (en) * | 2016-09-16 | 2019-05-03 | 派赛公司 | Common source and common grid amplifier biasing circuit |
| CN113508526A (en) * | 2019-03-06 | 2021-10-15 | 派赛公司 | Transistor bias adjustment for optimizing third order intercept point in cascode amplifier |
-
2022
- 2022-07-08 CN CN202210797709.3A patent/CN114944823A/en active Pending
- 2022-10-28 CN CN202222862793.0U patent/CN219459022U/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070024377A1 (en) * | 2005-07-28 | 2007-02-01 | Xuezhen Wang | Impedance matching techiques for multi-band or wideband RF amplifiers and associated amplifier designs |
| CN202652152U (en) * | 2012-05-15 | 2013-01-02 | 无锡中科微电子工业技术研究院有限责任公司 | Output power adjustable circuit of radio frequency power amplifier |
| CN102790593A (en) * | 2012-08-08 | 2012-11-21 | 江苏物联网研究发展中心 | Parallel-resistance feedback differential low-noise amplifier |
| CN109716648A (en) * | 2016-09-16 | 2019-05-03 | 派赛公司 | Common source and common grid amplifier biasing circuit |
| CN113508526A (en) * | 2019-03-06 | 2021-10-15 | 派赛公司 | Transistor bias adjustment for optimizing third order intercept point in cascode amplifier |
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| CN219459022U (en) | 2023-08-01 |
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