CN114928336A - Darlington amplifier with optimized low frequency noise function - Google Patents
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
- H03F1/3205—Modifications of amplifiers to reduce non-linear distortion in field-effect transistor amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
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- H—ELECTRICITY
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- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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Abstract
The invention discloses a Darlington amplifier with a function of optimizing low-frequency noise, which is applied to the field of radio frequency communication and aims at the problems that the suppression capability of noise is slightly deficient when an amplifier circuit is applied to extremely low frequency and the attention degree of out-of-band high-frequency stability is insufficient in the prior art; according to the invention, RC feedback is adopted between the grid electrode and the drain electrode of the active bias transistor, the suppression of extremely low frequency noise is realized by using a smaller capacitance value, meanwhile, the active bias self-excitation is avoided by using a small resistor, and the high frequency stability is enhanced by adopting an LR parallel frequency selection structure.
Description
Technical Field
The invention belongs to the field of radio frequency communication, and particularly relates to a low noise amplifier.
Background
As one of the key elements in a radio frequency communication system, a low noise amplifier has been widely used in many fields such as wireless communication, satellite navigation, radar remote sensing, and phased array systems. In a wireless receiving system, a low noise amplifier is often located at the frontmost end of a receiver and is used for amplifying a received weak signal, and the performance of the low noise amplifier directly affects the sensitivity and other performances of the whole communication system.
With the rapid development of communication technology, wireless communication systems with wider bandwidth have been receiving more attention, and naturally, low noise amplifiers have to be studied along with the trend of wider bandwidth. As a typical solution for the wideband amplifier, the darlington amplifier is favored by researchers due to its advantages of multi-octave bandwidth and higher linearity. Compared with the traditional common-source very-low-noise amplifier, the Darlington amplifier can reduce the use of on-chip inductance on one hand, thereby reducing the chip area, and on the other hand, the structure can make up the defect that the common-source amplifier cannot realize the broadband gain change from very low frequency (approaching direct current) to a higher frequency band.
From the prior art, the following topologies are available for the wideband darlington lna:
As shown in fig. 1, a darlington structure is directly formed by compounding two transistors, and a passive bias network with resistors dividing voltage is used to provide bias voltage for the corresponding transistors, although the circuit topology is clear and simple, the consistency of the electrical characteristics of the chip in the whole wafer is poor, and the drain current and the gain are easily affected by temperature changes;
prior art II
On the basis of the first prior art, an original resistance voltage division network is replaced by an active bias structure, and an RC negative feedback structure is added between input and output to expand the bandwidth, so that the topological structure can reduce the temperature-sensitive characteristic of the whole circuit and enhance the performance stability of the circuit, but the bandwidth and the gain flatness of the topological structure are still limited;
prior art III
As shown in fig. 2, the improvement is continued on the basis of the second prior art, and the cascode structure is used to replace the original second-stage common-source transistor, which may further expand the bandwidth and improve the gain flatness, but the noise protrusion generated by the active bias tube at the very low frequency may not be completely eliminated, and at this time, because the amplifier has a wider frequency band and a higher and flat gain, the stability inside and outside the operating frequency band needs to be particularly concerned.
In summary, the prior art has a little lack of noise suppression capability when the amplifier circuit is applied to very low frequencies, and has a low attention to out-of-band high frequency stability.
Disclosure of Invention
In order to solve the technical problem, the invention provides a Darlington amplifier with the function of optimizing low-frequency noise, wherein RC feedback is adopted between a grid electrode and a drain electrode of an active bias transistor, the suppression of extremely low-frequency noise is realized by using a smaller capacitance value, and meanwhile, the self-excitation of the active bias is avoided by using a small resistor; and an LR parallel frequency selective structure is adopted to enhance the high-frequency stability.
The technical scheme adopted by the invention is as follows: darlington amplifier with optimized low frequency noise function, comprising: a transistor M1, a transistor M2, a transistor M3; the source of the transistor M1 is connected to the gate of the transistor M3 through a parallel structure formed by an inductor L3 and a resistor R10, and the drain of the transistor M3 is connected to the source of the transistor M2;
the grid electrode of the transistor M1 is connected with the input end through the inductor L1, the drain electrode of the transistor M1 is connected with the drain electrode of the transistor M2, the grid electrode of the transistor M2 is connected with the output end, and the source electrode of the transistor M3 is grounded;
the gate bias voltage of transistor M1 is provided using an active bias network comprising: a resistor R5, a resistor R6 and an active bias transistor M4, wherein the first end of the resistor R6 is connected with the drain of the transistor M1, the second end of the resistor R6 is connected with the drain of the active bias transistor M4, the source of the active bias transistor M4 is grounded, and the gate of the active bias transistor M4 is connected with the source of the transistor M1; the first end of the resistor R5 is connected with the second end of the resistor R6, and the second end of the resistor R5 is connected with the gate of the transistor M1 through the inductor L1;
the gate bias voltage of the transistor M2 is obtained by performing resistance voltage division through a resistor R8 and a resistor R9 which are connected in series; the divided voltage is transmitted to a grid electrode of the M2 through a resistor R4, a first end of the resistor R8 is connected with an output end, a second end of the resistor R8 is connected with a first end of a resistor R9, a second end of the resistor R9 is grounded, a first end of a resistor R4 is connected with a second end of a resistor R8, and a second end of the resistor R4 is connected with a grid electrode of a transistor M2;
the gate bias voltage of the transistor M3 is provided by the voltage across the source feedback resistor R11 of the transistor M1;
the feedback circuit further comprises a series feedback structure consisting of a resistor R3 and a capacitor C3, wherein the series feedback structure is shorted between the gate and the drain of the transistor M4.
The circuit also comprises a resistor R7, wherein the resistor R7 is connected in series between the gate of the active bias transistor M4 and a parallel structure formed by the inductor L3 and the resistor R10.
The circuit also comprises a parallel structure formed by an inductor L2 and a resistor R2, wherein the parallel structure is connected between the drain electrode and the output end of the transistor M2 in series.
The capacitor C4 is also included, the first end of the capacitor C4 is connected with the second end of the resistor R8, and the second end of the capacitor C4 is grounded.
The feedback circuit further comprises a series feedback structure consisting of a resistor R1 and a capacitor C1, wherein the series feedback structure is located between the grid electrode and the drain electrode of the M1.
An input impedance matching unit L1 is also included, connected in series between the input and the gate of transistor M1.
Also included is an output impedance matching unit C2, which is connected in parallel to ground at the output.
The invention has the beneficial effects that: the low-frequency noise degradation phenomenon is improved by adding the RC feedback structure between the grid electrode and the drain electrode of the active bias transistor, meanwhile, the structure can replace a larger bypass capacitor by using a smaller capacitor, and is more beneficial to the compactness of the structural size of a chip.
Drawings
FIG. 1 is a schematic circuit diagram of a prior art I;
FIG. 2 is a schematic diagram of a circuit structure of a prior art III in the background art;
FIG. 3 is a schematic diagram of the circuit structure of the present invention;
FIG. 4 is a schematic diagram illustrating the noise current flow of the active bias transistor M4 according to the present invention;
FIG. 5 is a schematic diagram of the improvement of R3 and C3 in low frequency noise in the present invention;
fig. 6 is a schematic diagram of the improvement of the LR parallel structure in the present invention with respect to the stability factor.
Detailed Description
In order to facilitate the understanding of the technical contents of the present invention by those skilled in the art, the present invention will be further explained with reference to the accompanying drawings.
In the prior art, when the amplifier circuit is applied to extremely low frequency, the noise suppression capability is slightly deficient, and on the other hand, the attention of out-of-band high-frequency stability is insufficient.
The invention is mainly a further improvement on the prior art in the background art, and solves two problems of potential low-frequency noise protrusion and out-of-band high-frequency stability. The invention comprises the following 2 improvements:
on one hand, RC feedback is adopted between the grid electrode and the drain electrode of the active bias transistor, the suppression of extremely low frequency noise is realized by using a smaller capacitance value, and meanwhile, the active bias self-excitation is avoided by using a small resistor;
and on the other hand, an LR parallel frequency selection structure is adopted to enhance the high-frequency stability of the circuit.
As shown in FIG. 3, the present invention provides an improved Darlington-cascode low noise amplifier, and the whole circuit comprises 4 transistors (M1-M4), 11 resistors (R1-R11), 4 capacitors (C1-C4), and 3 inductors (L1-L3).
The capacitor C1 mainly has the main function of isolating direct current influence between the grid electrode and the drain electrode of the M1 transistor, R1 is considered during value selection, input matching is considered, the value selection of the capacitor C2 mainly considers output matching, the value selection of the capacitor C3 mainly considers low-frequency noise elimination capability, and the value selection of the capacitor C4 mainly considers a path provided for a radio-frequency signal leaked by the grid electrode of the M2 transistor to the ground; in the embodiment, the capacitor C1 is about 20pF, the capacitor C2 is about 0.5pF, the capacitor C3 is about 0.5pF, and the capacitor C4 is about 1 pF.
The value selection of the inductor L1 mainly considers input matching, and the value selection of the inductor L2 and the inductor L3 mainly considers stability; in the present embodiment, the inductance L1 is about 0.6nH, the inductance L2 is about 2nH, and the inductance L3 is about 0.6 nH.
The source of the transistor M1 is connected with the gate of the transistor M3 through the parallel structure of the inductor L3 and the resistor R10 to form a Darlington structure, and the drain of the transistor M3 is connected with the source of the transistor M2 to form a cascode structure, so that the transistor M1, the transistor M2 and the transistor M3 form a Darlington-cascode structure integrally.
For the transistor M1, on one hand, an RC series negative feedback structure composed of R1 and C1 is added between the gate input and the drain output of the transistor M1 to expand the operating frequency band and improve the low-frequency stability, and on the other hand, an active bias network is formed by the resistor R6 and the active bias transistor M4 to provide a corresponding gate bias voltage for the M1 transistor, and the bias voltage is transmitted to the gate of the M1 through a larger resistor R5 (meanwhile, the potential measurement can be performed by using R5 to ensure that the active bias network normally operates).
The larger resistor R5 here has a value of about 2500 ohms. Other non-large resistors have resistance values within about a few hundred ohms.
For the transistor M2, the gate bias voltage is obtained by performing resistance voltage division through the resistor R8 and the resistor R9, the divided voltage is supplied to the gate of the transistor M2 through the resistor R4, and the resistor R4 and the capacitor C4 can ensure the stability of the cascode structure and make the leaked radio frequency signal go to the ground through the capacitor C4.
For M3, the gate bias voltage is provided by the voltage on the source feedback resistor R11 of M1, and the large resistor R7 is used to isolate the rf signal interference between the gates of the mirror transistors M3 and M4.
The resistance of the large resistor R7 is about 10000 ohms here.
The series feedback structure of R3 and C3 is shorted between the gate and drain of transistor M4 for noise generated by M4 to ground through the feedback branch, thereby suppressing low frequency noise degradation.
The L3 and R10 are connected between the gate of the transistor M3 and the large resistor R7 in parallel, and the high-frequency stability of the circuit is improved through frequency selection.
The parallel structure of L2 and R2 is connected between the drain and the output port of M2, and is also used for enhancing the circuit stability, the inductor L1 is connected in series with the input port, the capacitor C2 is connected in parallel with the ground at the output port, and the two are respectively used for input and output impedance matching.
When considering that R3 and C3 suppress noise generated by the active bias transistor M4, the simplified schematic diagram of the main amplifying structure is shown in fig. 4, assuming that the main amplifying structure is free of noise. The transistor M4 generates a noise current I at its drain node V1 2 n If there is no feedback branch formed by R3 and C3, the output impedance seen from the drain of M4 is infinite, so a part of the noise current at node V1 will converge to output node V4 directly through resistor R6, and another part will reach the gate of M1 through resistor R5 and be amplified to node V4 by M1, which will increase the output noise (i.e. low frequency noise degradation) to a great extent.
When the feedback branch formed by R3 and C3 is added to the whole circuit, the output impedance Ro viewed from the drain of M4 is equal to (1/(j ω C3) + R7)/g m4 R7, the resistance of the output impedance Ro is further reduced along with the increase of the capacitance value of the capacitor C3 at low frequency, when Ro<<R5, noise current I 2 n When the current flows through the node V1, most of the signal necessarily passes through the R3 and the C3, and then passes through the resistor R7 to the ground, so as to reduce the noise directly gathered to the output terminal (if the C3 is very large, the ideal ac coupling between the nodes V1 and V2 can be regarded as one wire connection, and the noise current can be greatly fed back to the ground, thereby effectively suppressing the low-frequency noise deterioration). At high frequencies, the parasitic capacitance Cgd of M4 itself may also perform a function similar to that of C3. In fact, the large resistor R7 also generates resistive thermal noise V 2 n,R7 When 4kTR7, Vn can be converted into noise current In of M4 drain by calculation, and then noise is suppressed by C3 based on the above principle. For the resistor R3, it does not actually participate in the noise suppression function, if only C3 is added to the feedback branch, then C3 and the corresponding trace will exhibit an inductance effect at high frequency, and the inductance and the parasitic capacitances Cds and Cgs of M4 will form a capacitance three-point oscillation circuit, causing high-frequency self-excitation of the active bias tube, so that a small resistor R3 is added to suppress the high-frequency self-excitation.
The capacitance of the capacitor C3 used in the present invention is about 0.5 pF.
The noise generated by the active bias transistor M4 can be suppressed by connecting the large capacitor to the ground in parallel at the drain of the transistor M4 or connecting the large capacitor to the ground in parallel at the gate of the transistor M4; however, the capacitance value of the large capacitor required by the two modes is almost 3-5 pF or more, and the capacitance value of the capacitor is large, so that the compactness of the structure size of the chip is not facilitated.
For the LR parallel structure, for L3 and R10, when the transistor M1 drives the cascode structure of the subsequent stage, the subsequent stage may be regarded as a capacitive load due to various parasitic effects, and the capacitive load is more likely to generate a negative resistance effect, thereby causing unstable phenomena such as self-oscillation and the like, and deteriorating the stability of the low noise amplifier. And after the structure that L3 and R10 are connected in parallel is added to the grid of M3, the stable characteristic can be well realized. Although the purpose of enhancing stability can be achieved by adding only one resistor R10, the resistor reduces the gain in the whole frequency band. However, when the inductor L3 is added, the frequency characteristics of this stable structure are also changed. When the resistance values of the resistor R10 and the inductor L3 are equal, the transition frequency f can be obtained 0 R10/(2 pi L3). When the signal frequency is lower than the transition frequency f 0 At times, the input signal will be transmitted through inductor L3 with almost no loss, but at signal frequencies above f 0 Then the signal is transmitted through resistor R10 with loss to sacrifice gain for increased stability. Meanwhile, the inductor L3 can compensate the phase delay introduced by the capacitive load, thereby realizing signal balance.
The above analysis can be used to understand the principle of enhancing high frequency stability for L2 and R2, and the frequency characteristics are similar to the above analysis. And the inductor L2 can also compensate the output parasitic capacitance of the M2 tube at this time, but at this time, from a specific impedance expression, the output impedance expression can also be obtained as seen from the drain of the transistor M2 in fig. 3:
as can be seen from the above equation, since the real part of the impedance expression is never 0 due to the presence of the resistor R2, this suppresses the generation of the negative resistance component, thereby avoiding self-oscillation. Meanwhile, the structure can participate in output impedance matching and obtain better linearity.
The R3 and C3 feedback units can achieve effective improvement on low-frequency noise, and the improvement situation of the units on the low-frequency noise is shown in figure 5.
As can be seen from fig. 5, the feedback unit consisting of R3 and C3 does have a great improvement in low frequency noise. In the very low frequency case, the noise figure is reduced to about 2.5dB from the noise figure of nearly 9dB, and the noise figure is reduced by about 72 percent.
The LR parallel configuration can effectively enhance the stability of the amplifier inside and outside the band, and the improvement of the stability factor is shown in fig. 6.
The stability of the amplifier is often characterized by a factor K, and when K >1 is unconditionally stable, the amplifier can be regarded as being unconditionally stable. It can be seen from fig. 6 that the K factor has unstable frequency bands inside and outside the frequency band when the LR parallel structure is not provided, and after the LR parallel structure is added, not only full frequency band (DC-6GHz) stabilization is achieved, but also out-of-band stability up to 30GHz is achieved, which can ensure that the amplifier is still in a stable state when the amplifier operates in a wireless communication system and an unknown high-frequency signal is fed by an antenna, and the stability of the whole system is not damaged.
It will be appreciated by those of ordinary skill in the art that the embodiments described herein are intended to assist the reader in understanding the principles of the invention and are to be construed as being without limitation to such specifically recited embodiments and examples. Various modifications and alterations to this invention will become apparent to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.
Claims (8)
1. Darlington amplifier with optimized low frequency noise function, comprising: a transistor M1, a transistor M2, a transistor M3; the source of the transistor M1 is connected with the gate of the transistor M3 through a parallel structure formed by an inductor L3 and a resistor R10, and the drain of the transistor M3 is connected with the source of the transistor M2;
the gate of the transistor M1 is connected with the input end, the drain of the transistor M1 is connected with the drain of the transistor M2, the gate of the transistor M2 is connected with the output end, and the source of the transistor M3 is grounded;
the gate bias voltage of transistor M1 is provided using an active bias network comprising: a resistor R5, a resistor R6 and an active bias transistor M4, wherein the first end of the resistor R6 is connected with the drain of the transistor M1, the second end of the resistor R6 is connected with the drain of the active bias transistor M4, the source of the active bias transistor M4 is grounded, and the gate of the active bias transistor M4 is connected with the source of the transistor M1; the first end of the resistor R5 is connected with the second end of the resistor R6, and the second end of the resistor R5 is connected with the grid electrode of the transistor M1;
the gate bias voltage of the transistor M2 is obtained by performing resistance voltage division on a resistor R8 and a resistor R9 which are connected in series; the divided voltage is transmitted to a grid electrode of the M2 through a resistor R4, a first end of the resistor R8 is connected with an output end, a second end of the resistor R8 is connected with a first end of a resistor R9, a second end of the resistor R9 is grounded, a first end of a resistor R4 is connected with a second end of a resistor R8, and a second end of the resistor R4 is connected with a grid electrode of a transistor M2;
the gate bias voltage of the transistor M3 is provided by the voltage across the source feedback resistor R11 of the transistor M1;
the feedback circuit further comprises a series feedback structure consisting of a resistor R3 and a capacitor C3, wherein the series feedback structure is shorted between the gate and the drain of the transistor M4.
2. The darlington amplifier with optimized low-frequency noise function according to claim 1, further comprising a resistor R7, wherein the resistor R7 is connected in series between the gate of the active bias transistor M4 and the parallel structure of the inductor L3 and the resistor R10.
3. The darlington amplifier having a function of optimizing low-frequency noise according to claim 2, further comprising a parallel structure of an inductor L2 and a resistor R2, the parallel structure being connected in series between the drain of the transistor M2 and the output terminal.
4. The darlington amplifier with a function of optimizing low-frequency noise according to claim 3, further comprising a capacitor C4, wherein a first terminal of the capacitor C4 is connected to the second terminal of the resistor R8, and a second terminal of the capacitor C4 is connected to ground.
5. The darlington amplifier with low frequency noise optimizing function according to claim 4, further comprising a series feedback structure of a resistor R1 and a capacitor C1, the series feedback structure being located between the gate and the drain of M1.
6. The darlington amplifier with function of optimizing low-frequency noise according to claim 1, further comprising an input impedance matching unit connected in series between the input terminal and the gate of the transistor M1.
7. The darlington amplifier having a function of optimizing low-frequency noise according to claim 6, wherein a second terminal of the resistor R5 is connected to a gate of the transistor M1 through an input impedance matching unit.
8. The darlington amplifier having a function of optimizing low-frequency noise according to claim 1, further comprising an output impedance matching unit connected in parallel to a ground at an output terminal.
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