CN114913782A - Display device - Google Patents

Display device Download PDF

Info

Publication number
CN114913782A
CN114913782A CN202110177359.6A CN202110177359A CN114913782A CN 114913782 A CN114913782 A CN 114913782A CN 202110177359 A CN202110177359 A CN 202110177359A CN 114913782 A CN114913782 A CN 114913782A
Authority
CN
China
Prior art keywords
layer
electrode
display device
display
grid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202110177359.6A
Other languages
Chinese (zh)
Inventor
刘晓伟
林昌廷
孙明晓
高上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hisense Visual Technology Co Ltd
Original Assignee
Hisense Visual Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hisense Visual Technology Co Ltd filed Critical Hisense Visual Technology Co Ltd
Priority to CN202110177359.6A priority Critical patent/CN114913782A/en
Publication of CN114913782A publication Critical patent/CN114913782A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect
    • G02F1/153—Constructional details
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect
    • G02F1/163—Operation of electrochromic cells, e.g. electrodeposition cells; Circuit arrangements therefor
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/34—Parallel operation in networks using both storage and other dc sources, e.g. providing buffering
    • H02J7/35—Parallel operation in networks using both storage and other dc sources, e.g. providing buffering with light sensitive cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Theoretical Computer Science (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

The invention discloses a display device, comprising: the pixel structure comprises a substrate and a plurality of pixel units arranged on one side of the substrate; the pixel unit comprises a display area and a color-changing area, wherein a micro light-emitting diode is arranged in the display area, an electrochromic device is arranged in the color-changing area, a solar cell device is arranged between the electrochromic device and the substrate, and the orthographic projection of the electrochromic device on the substrate covers the orthographic projection of the solar cell device on the substrate; when the display device is switched to the display mode, the electrochromic device is in a black opaque state, so that the display contrast can be improved, and the display image quality is improved; when the display device is switched to the energy storage mode, the electrochromic device is in a transparent state, light can smoothly irradiate the solar cell device, the solar cell device absorbs ambient light, the ambient light is converted into electric energy to supply power to the display device, and the service life of the display device is prolonged.

Description

Display device
Technical Field
The invention relates to the technical field of display, in particular to a display device.
Background
Micro Light Emitting Diode (Micro Light Emitting Diode, abbreviated as Micro-LED) technology, that is, Light Emitting Diode (Light Emitting Diode, abbreviated as LED) Micro-scale and matrixing technology. The Micro-LED is applied to a display device to form a Micro light-emitting diode display device, and as the Micro-LED has the advantage of higher brightness, the outdoor environment is often in a strong light state, the Micro-LED is commonly used in the outdoor display device.
However, the power consumption of the existing Micro-LED outdoor large-screen display device is high, the outdoor environment is complex, the power supply is difficult to guarantee in many scenes, and therefore the service time cannot be guaranteed.
Disclosure of Invention
In some embodiments of the present invention, a display device includes: the pixel structure comprises a substrate and a plurality of pixel units arranged on one side of the substrate; the pixel unit comprises a display area and a color-changing area, wherein a high-brightness micro light-emitting diode is arranged in the display area, an electrochromic device is arranged in the color-changing area, a solar cell device is arranged between the electrochromic device and the substrate, and the orthographic projection of the electrochromic device on the substrate covers the orthographic projection of the solar cell device on the substrate; when the display device is switched to the display mode, the electrochromic device is in a black opaque state, so that the display contrast can be improved, and the display image quality is improved; when the display device is switched to the energy storage mode, the electrochromic device is in a transparent state, light can smoothly irradiate the solar cell device, the solar cell device absorbs ambient light, absorbed light energy is converted into electric energy to be stored in the display device, loss of an original power supply is supplemented, the stored electric energy can be applied when the display device is used later, and the service life of the display device is prolonged.
In some embodiments of the present invention, a display device includes a plurality of gate lines, a plurality of first data lines, and a plurality of second data lines; the grid lines extend along a first direction and are arranged along a second direction; the first data lines extend along the second direction and are arranged along the first direction; the second data lines extend along the second direction, are arranged along the first direction and are alternately arranged with the first data lines; the first direction and the second direction intersect; the grid line and the first data line divide a pixel unit.
In some embodiments of the present invention, the pixel unit of the display device further includes a first thin film transistor and a second thin film transistor, the first thin film transistor includes a first gate, a first source and a first drain, the first gate is connected to the gate line, the first source is connected to the first data line, and the first drain is connected to the micro light emitting diode; the first thin film transistor transmits a signal of the first data line to the micro light emitting diode under the control of a signal of the gate line, thereby realizing the control of the brightness of the micro light emitting diode. The second thin film transistor comprises a second grid electrode, a second source electrode and a second drain electrode, the second grid electrode is connected with the grid line, the second source electrode is connected with the second data line, and the second drain electrode is connected with the electrochromic device; the second thin film transistor transmits the signal of the second data line to the electrochromic device under the control of the signal of the gate line, so that the electrochromic device is switched between a transparent state and a black opaque state according to different requirements of the display device modes.
In some embodiments of the present invention, the driving circuit layer includes a first thin film transistor, a second thin film transistor, and a plurality of exposed first electrodes and second electrodes. The micro light-emitting diode is positioned on one side of the driving circuit layer, which is far away from the substrate and is connected with the first electrode; the electrochromic device is positioned on one side of the driving circuit layer, which is far away from the substrate base plate, and is connected with the second electrode.
In some embodiments of the present invention, the driving circuit layer includes a gate metal layer, a gate insulating layer, an active layer, a source drain metal layer, and a passivation layer. The grid metal layer, the active layer, the source drain metal layer and the passivation layer can be formed by adopting a one-step composition process, so that the process difficulty is reduced.
In some embodiments of the present invention, the gate metal layer further includes a fixed potential signal line, and the gate insulating layer includes a via hole for exposing the fixed potential signal line; the source-drain metal layer also comprises a third electrode which is electrically connected with the fixed potential signal line through a through hole of the gate insulating layer; the passivation layer further includes a via hole for exposing the third electrode, and the first electrode is electrically connected to the third electrode through the via hole of the passivation layer.
In some embodiments of the present invention, the display device further includes a light-shielding layer having a pattern covering the gate line, the first data line, the second data line, the first thin film transistor, and the second thin film transistor. The light shielding layer can be made of materials such as black resin and the like, has a shielding effect on each signal line and each thin film transistor in the driving circuit layer, can prevent environment direct light from irradiating the grid line, the first data line, the second data line, the first thin film transistor and the second thin film transistor, and avoids the problems of glare and the like, so that the display effect of the display device is improved.
In some embodiments of the present invention, an electrochromic device comprises: the ion storage layer is arranged on the first transparent conducting layer; when the color changing layer is made of an electro-acid-base response material, the first transparent conducting layer and the second transparent conducting layer form an electric field after electric signals are applied, ions in the ion storage layer can reach the color changing layer through the ion conducting layer, so that the acid-base characteristic of the color changing layer is changed, the color of dye in the color changing layer is changed when the acid-base characteristic is changed, and therefore the electro-chromic device is changed from transparent color to black. And if a reverse voltage is applied to the electrochromic device, the electrochromic device can be converted from black to transparent again.
In some embodiments of the present invention, a solar cell device includes: the solar cell comprises a conducting layer, an N-type semiconductor layer, an intrinsic semiconductor layer and a P-type semiconductor layer, wherein the solar cell device is made of a P-I-N type amorphous silicon film, the basic process of the P-I-N type amorphous silicon film solar cell device can be compatible with a panel production line, and the functions of the product are improved on the basis of not increasing the product cost greatly.
In some embodiments of the present invention, a display device includes a power module and a connection line; the power module provides power for the display device, and the connecting wire is used for electrically connecting the power module and the conducting layer of the solar cell device, so that the power module of the display device is electrically connected with the solar cell device, and the electric energy converted by the solar cell device can be applied to the display device.
In some embodiments of the present invention, a driving method of a display device includes: when the display device is switched to the energy storage mode, a first signal loaded by the second data line is transmitted to the electrochromic device, so that the electrochromic device is in a transparent state under the control of the first signal; when the display device is switched to a display mode, the second signal loaded by the second data line is transmitted to the electrochromic device, so that the electrochromic device is in a black opaque state under the control of the second signal. In the display mode, the electrochromic device is in a black opaque state, so that the display contrast can be greatly improved, and the display picture quality is improved; in the energy storage mode, the electrochromic device is in a transparent state, light can be smoothly irradiated on the solar cell device, and the solar cell device absorbs ambient light and converts the ambient light into electric energy to supply power for the display device.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required to be used in the embodiments of the present invention will be briefly described below, and it is obvious that the drawings described below are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic top view of a display device according to an embodiment of the present invention;
fig. 2 is a schematic partial cross-sectional view of a display device according to an embodiment of the invention;
FIG. 3 is a schematic cross-sectional structure diagram of an electrochromic device according to an embodiment of the present invention;
fig. 4 is a schematic cross-sectional structure diagram of a solar cell device provided in an embodiment of the present invention;
fig. 5 is a second partial cross-sectional structural diagram of a display device according to an embodiment of the invention;
fig. 6 is a third schematic partial cross-sectional view illustrating a display device according to an embodiment of the invention;
fig. 7 is a flowchart illustrating a driving method of a display device according to an embodiment of the invention.
Wherein, 10-substrate, 11-micro light emitting diode, 12-electrochromic device, 13-solar cell device, 14-first thin film transistor, 15-second thin film transistor, 20-driving circuit layer, 30-light shielding layer, 40-power module, 50-connecting line, 201-gate metal layer, 201-gate insulating layer, 203-active layer, 304 source drain metal layer, 205-passivation layer, 121-first conducting layer, 122-ion storage layer, 123-ion conducting layer, 124-color changing layer, 125-second transparent conducting layer, 131-conducting layer, 132-N type semiconductor layer, 133-intrinsic semiconductor layer, 134-P type semiconductor layer, e 1-first electrode, e 2-second electrode, e3-third electrode, G1-first gate, G2-second gate, S1-first source, S2-second source, D1-first drain, D2-second drain, a-channel region, P-fixed potential signal line, L-gate line, N-data line, N1-first data line, N2-second data line, E-display region, F-light-transmitting region.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, the present invention is further described with reference to the accompanying drawings and examples. Example embodiments may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus their repetitive description will be omitted. The words indicating positions and directions in the present invention are illustrated by way of example in the accompanying drawings, but may be changed as required and are within the scope of the present invention. The drawings of the present invention are for illustrative purposes only and do not represent true scale.
Micro Light Emitting diodes (Micro-LEDs) are designed to be thin-film, miniaturized, and arrayed, and have the characteristics of high efficiency and low power consumption of LEDs, and also have a small size. Due to the high size and brightness of the Micro-LED, the Micro-LED is often applied to outdoor display devices in a strong light state.
The micro light emitting diode display device can be driven in a passive or active mode, wherein the active driving mode has the advantages of low power consumption, crosstalk resistance, low driving cost and the like. In addition, the micro light-emitting diode display device with the active drive can also be manufactured by adopting a thin film process.
Fig. 1 is a schematic top view of a display device according to an embodiment of the present invention.
Referring to fig. 1, the display device includes: a base substrate 10 and a plurality of pixel units disposed on the base substrate 10. The pixel unit is divided by a plurality of gate lines L and a plurality of first data lines N1 provided on the substrate 10.
As shown in fig. 1, a substrate base plate 10 is located at the bottom of the display device; the gate lines L extend along the first direction x and are arranged along the second direction y, and the first data lines N1 extend along the second direction y and are arranged along the first direction x. Wherein the first direction x and the second direction y cross each other such that the gate line L and the first data line N1 cross each other to partition a plurality of pixel units. In a specific implementation, the first direction x and the second direction y are perpendicular to each other, and the first direction x is a direction of a pixel unit row, and the second direction y is a direction of a pixel unit column.
As shown in fig. 1, a pixel unit of a display device according to an embodiment of the present invention includes: display areas E and color shifting areas F.
Set up miniature emitting diode 11 in display area E, miniature emitting diode 11 has multiple colour, includes: the red micro light-emitting diode, the green micro light-emitting diode and the blue micro light-emitting diode are arranged in the pixel, and one adjacent red micro light-emitting diode, one adjacent green micro light-emitting diode and one adjacent blue micro light-emitting diode form one pixel.
The micro light emitting diode 11 is different from a common light emitting diode, and the micro light emitting diode 11 has a very small size and high brightness, so that the micro light emitting diode 11 can be applied to an outdoor environment in a high-light state, but in a complex outdoor environment in the high-light state, the power supply has a large loss degree and high cost.
In view of this, in the embodiment of the present invention, the region of the pixel unit except the display region E is set as the color-changing region F, the electrochromic device 12 is disposed in the color-changing region F, and the electrochromic device 12 is in a black opaque state when the display apparatus is switched to the display mode and in a transparent state when the display apparatus is switched to the energy storage mode. A solar cell device 13 is disposed between the electrochromic device 12 and the base substrate 10, and an orthographic projection of the electrochromic device 12 on the base substrate 10 covers an orthographic projection of the solar cell device 12 on the base substrate 10.
When the display device is switched to the display mode, the electrochromic device 12 is in a black opaque state, so that the display contrast can be improved, and the display image quality can be improved; when the display device is switched to the energy storage mode, the electrochromic device 12 is in a transparent state, light can smoothly irradiate the solar cell device 13, the solar cell device 13 absorbs ambient light, absorbed light energy is converted into electric energy to be stored in the display device, loss of an original power supply is supplemented, the stored electric energy can be applied when the display device is used later, and the service life of the display device is prolonged.
Referring to fig. 1, the display apparatus according to the embodiment of the invention is further provided with a plurality of second data lines N2, wherein the second data lines N2 extend along the second direction y, are arranged along the first direction x, and are alternately arranged with the first data lines N1, and the second data lines N2 are used for providing signals to the electrochromic device 12 so that the electrochromic device 12 can be switched between a transparent state and a black opaque state according to different requirements of the display apparatus mode.
Further, as shown in fig. 1, a pixel unit of a display device according to an embodiment of the present invention further includes: a first thin film transistor 14 and a second thin film transistor 15.
The first thin film transistor 14 includes: a first gate G1, a first source S1, and a first drain D1.
The first gate G1 of the first tft 14 is connected to the gate line L, the first source S1 is connected to the first data line N1, and the first drain D1 is connected to the micro light emitting diode 11; the first thin film transistor 14 can apply the signal voltage of the first data line N1 to the micro light emitting diode 11 under the control of the signal of the gate line L, thereby controlling the brightness of the micro light emitting diode 11.
The second thin film transistor 15 includes: a second gate G2, a second source S2, and a second drain D2.
The second gate electrode G2 of the second thin film transistor 15 is connected to the gate line L, the second source electrode S2 is connected to the second data line N2, and the second drain electrode D2 is connected to the electrochromic device 12; when the display device is switched to the energy storage mode, the second thin film transistor 15 transmits the first signal loaded by the second data line to the electrochromic device 12 under the control of the signal of the gate line L, so that the electrochromic device 12 is in a transparent state under the control of the first signal; when the display device is switched to the display mode, the second thin film transistor 15 transmits the second signal loaded on the second data line to the electrochromic device 12 under the control of the signal of the gate line L, so that the electrochromic device 12 is in a black opaque state under the control of the second signal.
In the display mode, the electrochromic device 12 is in a black opaque state, which can improve the display contrast and further improve the display quality; in the energy storage mode, the electrochromic device 12 is in a transparent state, light can smoothly irradiate the solar cell device 13, the solar cell device 13 absorbs solar light, absorbed light energy is converted into electric energy to be stored in the display device, loss of an original power supply is supplemented, the stored electric energy can be applied when the display device is used later, and the service life of the display device is prolonged.
The color-changing region F of the display device according to the embodiment of the present invention is located between the first data line N1 and the second data line N2 in the pixel unit, and the electrochromic device 12 covers the entire area of the color-changing region F, so that the size of the solar cell device 13 can also be set as large as possible. When the display device is in a display mode, the color-changing area F covered by the electrochromic device 12 is completely in a black opaque state, so that the display contrast can be improved to the greatest extent, and the display image quality is optimal; when the display device is in the energy storage mode, the color changing regions F covered by the transparent electrochromic device 12 are all in a transparent state, so that the solar cell device 13 can absorb solar rays and convert more electric energy.
Fig. 2 is a schematic partial cross-sectional view of a display device according to an embodiment of the invention.
Referring to fig. 2, the display device includes: a base substrate 10, a driving line layer 20, and a light shielding layer 30.
The substrate base plate 10 is located at the bottom of the display device and has a bearing function. The base substrate 10 has a rectangular or square shape including a top side, a bottom side, a left side, and a right side. Wherein the antenna side is opposite to the ground side, the left side is opposite to the right side, the antenna side is connected with one end of the left side and one side of the right side respectively, and the ground side is connected with the other end of the left side and the other end of the right side respectively.
The size of the substrate base plate 10 is adapted to the size of the display device, and generally, the size of the substrate base plate 10 is slightly smaller than the size of the display device.
The substrate 10 is made of glass or the like, and before manufacturing, the glass needs to be cleaned, dried, or the like.
The driving circuit layer 20 is disposed on the substrate 10, and the driving circuit layer 20 includes a signal line and a driving element for driving the micro light emitting diode to emit light. In the embodiment of the present invention, a Thin Film Transistor (TFT) manufacturing process is used to manufacture the driving circuit layer 20.
The driving line layer 20 is composed of a plurality of metal layers and insulating layers, and a circuit including driving elements such as a first thin film transistor and a second thin film transistor having a specific connection relationship, a capacitor, and a resistor is formed by patterning the metal layers and the insulating layers. After the driving circuit layer 20 is electrically connected to the micro light emitting diode 11 and the electrochromic device 12, the driving circuit layer 20 may provide a driving signal to the micro light emitting diode 11 to control the micro light emitting diode 11 to emit light, and provide a driving signal to the electrochromic device 12 to control the color development state of the electrochromic device 12.
As shown in fig. 2, the driving circuit layer 20 in the embodiment of the invention includes a first electrode e1 and a second electrode e2, which are exposed, the first electrode e1 is used for electrically connecting the micro light emitting diode 11, and the second electrode e2 is used for electrically connecting the electrochromic device 12. The first electrode e1 is an exposed pad on the array substrate, and the micro light emitting diode 11 is usually soldered on the first electrode e1, thereby achieving an electrical connection therebetween.
Specifically, the first electrode e1 and the second electrode e2 in the embodiment of the invention are made of a transparent conductive material, i.e., ito, and there is no contact between the two first electrodes e1 connected to the same micro light emitting diode 11.
The patterns of the first electrode e1 and the second electrode e2 are formed using a one-time patterning process.
Specifically, as shown in fig. 2, in the embodiment of the present invention, the driving line layer 20 includes: a gate metal layer 201, a gate insulating layer 202, an active layer 203, a source-drain metal layer 204, and a passivation layer 205.
The gate metal layer 201 is located on the substrate 10 and on the surface of the substrate 10 on the same side as the solar cell device 13, and the pattern of the gate metal layer 201 does not overlap with the solar cell device 13. The gate metal layer has a pattern including a first gate G1, a second gate G2, a gate line, and a fixed potential signal line P.
The gate metal layer 201 may use a single-layer or multi-layer metal of gold (Au), silver (Ag), copper (Cu), nickel (Ni), platinum (Pt), aluminum (Al), molybdenum (Mo), or chromium (Cr), or may also use a metal layer of aluminum (Al): neodymium (Nd) alloy, molybdenum (Mo): tungsten (W) alloy.
The pattern of the gate metal layer 201 may be formed using a one-time patterning process. After the pattern of the gate metal layer 201 is formed, the pattern of the solar cell device 13 is formed on the base substrate.
The gate insulating layer 202 is located on the surface of the gate metal layer 201 and the side of the solar cell device 13 facing away from the base substrate 20. The gate insulating layer 202 serves to insulate the gate metal layer 201, so that another metal layer may be further formed on the gate insulating layer 202.
The gate insulating layer 202 may be an inorganic layer of silicon oxide, silicon nitride, or metal oxide, and may include a single layer or multiple layers. The gate insulating layer 202 includes a via hole for exposing the fixed-potential signal line P, and is formed using a one-time patterning process.
The active layer 203 is located on the surface of the gate insulating layer 202 on the side away from the gate metal layer 201. The active layer 203 includes a source region and a drain region formed by doping N-type impurity ions or P-type impurity ions. The region between the source region and the drain region is a channel region a that is not doped.
The active layer 203 may be formed using amorphous silicon, polysilicon, or the like, and the polysilicon may be formed by crystallization of the amorphous silicon.
The source-drain metal layer 204 is located on a surface of the active layer 203 on a side away from the gate insulating layer 202. The source-drain metal layer 204 has a pattern including a first source S1, a second source S2, a first drain D1, a second drain D2, a third electrode e3, a first data line, and a second data line, wherein the third electrode e3 is electrically connected to the fixed potential signal line P through a via hole of the gate insulating layer 202.
The source/drain metal layer 204 may be a single layer or multiple layers of gold (Au), silver (Ag), copper (Cu), or aluminum (Al), or may be a metal layer of aluminum (Al): copper (Cu) alloy.
The patterns of the active layer 203 and the source drain metal layer 204 can be formed by adopting a one-step composition process; alternatively, the patterns of the active layer 203 and the source-drain metal layer 204 may be patterned separately.
The first gate G1, the active layer 203, the first source S1, and the first drain D1 form a first thin film transistor, and the second gate G2, the active layer 203, the second source S2, and the second drain D2 form a second thin film transistor.
The passivation layer 205 is located on the surface of the active layer 203 and the source-drain metal layer 204 on the side away from the gate insulating layer 202. The passivation layer 205 is used for insulating and protecting the active layer 203 and the source-drain metal layer 204.
The passivation layer 205 may be SiN X /SiO X And the like, patterns of via holes in the passivation layer 205 for exposing the first drain electrode D1, the second drain electrode D2 and the third electrode e3 in the source-drain metal layer are formed by a one-step patterning process, the first electrode e1 is electrically connected with the first drain electrode D1 and the third electrode e3 through the via hole of the passivation layer 205, the second electrode e2 is electrically connected with the second drain electrode D2 through the via hole of the passivation layer 205, and a fixed potential signal line P electrically connected with the third electrode e3 can provide a potential for the micro light emitting diode 11.
The light shielding layer 30 is located on a surface of the driving circuit layer 20 on a side away from the substrate 10, and the light shielding layer 30 has a pattern covering the gate line, the first data line, the second data line, the first thin film transistor and the second thin film transistor. The light shielding layer 30 may be made of a material such as black resin, and the light shielding layer has a shielding effect on the signal lines and the thin film transistors in the driving circuit layer 20, so as to prevent direct ambient light from irradiating the gate lines, the first data lines, the second data lines, the first thin film transistors, and the second thin film transistors, and prevent glare, thereby improving the display effect of the display device.
Fig. 3 is a schematic cross-sectional structure diagram of an electrochromic device according to an embodiment of the present invention.
Referring to fig. 2 and 3, the electrochromic device 12 is located on a surface of the driving circuit layer 20 on a side facing away from the substrate base plate 10, and the electrochromic device 12 specifically includes: a first transparent conductive layer 121; an ion storage layer 122 on one side of the first conductive layer 121; the ion conducting layer 123 is located on the side of the ion storage layer 122 away from the first transparent conducting layer 121; a color altering layer 124 on a side of the ion conducting layer 123 facing away from the ion storage layer 122; and a second transparent conductive layer 125 on a side of the color changing layer 124 remote from the ion conductive layer 123.
The material types adopted by the color changing layer 124 in the embodiment of the present invention include viologen compounds, metal phthalocyanine compounds, conductive polymer materials, and electro-acid-base responsive materials.
Specifically, when the color changing layer 124 is made of an electrochromic acid-base responsive material, the first transparent conductive layer 121 and the second transparent conductive layer 125 form an electric field after an electric signal is applied, so that ions in the ion storage layer 122 can reach the color changing layer 124 through the ion conductive layer 123, so that the acid-base characteristic of the color changing layer 124 is changed, and the color of the dye in the color changing layer 124 is changed when the acid-base characteristic is changed, so that the electrochromic device 12 is changed from transparent color to black color. And if a reverse voltage is applied to the electrochromic device 12, the electrochromic device 12 can be turned from black to transparent again.
The electrochromic device 12 provided by the embodiment of the present invention may be configured such that the first transparent conductive layer 121 is disposed near one side of the driving circuit layer 20; the second transparent conductive layer 125 may be disposed near one side of the driving circuit layer 20, and is not limited herein.
Fig. 4 is a schematic cross-sectional structure diagram of a solar cell device according to an embodiment of the present invention. Fig. 5 is a second partial cross-sectional view of a display device according to an embodiment of the invention.
Referring to fig. 4 and 5, the solar cell device 13 is made of a P-I-N type amorphous silicon thin film, and the solar cell device 13 is located on the base substrate 10 and includes: a conductive layer 131, an N-type semiconductor layer 132, an intrinsic semiconductor layer 133, and a P-type semiconductor layer 134.
The conductive layer 131 is located on the substrate 10, and is made of transparent conductive material indium tin oxide, and the shape and size of the material are the same as those of the solar cell device 13.
The N-type semiconductor layer 132 is disposed on the conductive layer 131 and has a shape and size corresponding to the conductive layer 131.
The intrinsic semiconductor layer 133 is disposed on the N-type semiconductor layer 132, and has a shape and size identical to those of the N-type semiconductor layer 132.
The P-type semiconductor layer 134 is positioned on the intrinsic semiconductor layer 133 in a shape and size identical to the intrinsic semiconductor layer 133.
The basic process of the P-I-N type amorphous silicon thin film solar cell device can be compatible on a panel production line, so that when the P-I-N type amorphous silicon thin film is adopted to manufacture the solar cell device 13, the functions of the product can be improved on the basis of not greatly increasing the product cost.
Fig. 6 is a third schematic partial sectional view of a display device according to an embodiment of the invention.
Referring to fig. 6, the display device according to the embodiment of the present invention includes a power module 40 and a connection line 50.
The power module 40 supplies power to the display device, and the connection line 50 is used to electrically connect the power module 40 and the conductive layer 131 of the solar cell device 13, thereby electrically connecting the power module 40 of the display device and the solar cell device 13, so that the electric energy converted by the solar cell device 13 can be applied to the display device.
In another aspect of the embodiments of the present invention, a driving method based on the display device is provided. Fig. 7 is a flowchart illustrating a driving method of a display device according to an embodiment of the present invention.
Referring to fig. 7, a method for driving a display device according to an embodiment of the present invention includes:
s10, determining the mode of the display device;
s20, when the display device is switched to the energy storage mode, controlling the electrochromic device to be switched to a transparent state;
and S30, when the display device is switched to the display mode, controlling the electrochromic device to be switched to the black opaque state.
The electrochromic device is in a transparent state when the display device is switched to the energy storage mode, and is in a black opaque state when the display device is switched to the display mode.
Specifically, when the display device is switched to the energy storage mode, a first signal loaded by the second data line is transmitted to the electrochromic device, so that the electrochromic device is in a transparent state under the control of the first signal; when the display device is switched to a display mode, the second signal loaded by the second data line is transmitted to the electrochromic device, so that the electrochromic device is in a black opaque state under the control of the second signal. In the display mode, the electrochromic device is in a black opaque state, so that the display contrast can be greatly improved, and the display image quality is improved; in the energy storage mode, the electrochromic device is in a transparent state, light can smoothly irradiate the solar cell device, and the solar cell device absorbs ambient light and converts the ambient light into electric energy to supply power for the display device.
According to the first inventive concept, a pixel unit of a display device includes: the display area is internally provided with a micro light-emitting diode which is different from a common light-emitting diode, the size of the micro light-emitting diode is very small, the brightness is high, and therefore the micro light-emitting diode can be applied to the outdoor environment in a high-light state.
According to the second inventive concept, the area of the pixel unit except the display area is set as the color-changing area, the electrochromic device is arranged in the color-changing area, and the electrochromic device presents a black opaque state when the display device is switched to the display mode and presents a transparent state when the display device is switched to the energy storage mode. A solar cell device is disposed between the electrochromic device and the base substrate, and an orthographic projection of the electrochromic device on the base substrate covers an orthographic projection of the solar cell device on the base substrate.
According to the third inventive concept, when the display apparatus is switched to the display mode, the electrochromic device is in a black opaque state, which can improve the display contrast and further improve the display image quality; when the display device is switched to the energy storage mode, the electrochromic device is in a transparent state, light can smoothly irradiate the solar cell device, the solar cell device absorbs ambient light, absorbed light energy is converted into electric energy to be stored in the display device, loss of an original power supply is supplemented, the stored electric energy can be applied when the display device is used later, and the service life of the display device is prolonged.
According to the fourth inventive concept, the color-changing region of the display device is located between the first data line and the second data line in the pixel unit, and the electrochromic device covers the entire area of the color-changing region, so that the size of the solar cell device can also be set as large as possible. When the display device is in a display mode, the color-changing area covered by the electrochromic device is in a black opaque state, so that the display contrast can be improved to the greatest extent, and the display image quality is optimal; when the display device is in the energy storage mode, the color changing regions covered by the transparent electrochromic device are all in a transparent state, so that the solar cell device can absorb solar rays and convert more electric energy.
According to a fifth inventive concept, the light blocking layer has a pattern covering the gate line, the first data line, the second data line, the first thin film transistor, and the second thin film transistor. The light shielding layer can be made of materials such as black resin and the like, has a shielding effect on each signal line and each thin film transistor in the driving circuit layer, can prevent environment direct light from irradiating the grid line, the first data line, the second data line, the first thin film transistor and the second thin film transistor, and avoids the problems of glare and the like, so that the display effect of the display device is improved.
According to a sixth inventive concept, an electrochromic device includes: the ion storage layer is arranged on the first transparent conducting layer; when the color changing layer is made of an electro-acid-base response material, the first transparent conducting layer and the second transparent conducting layer form an electric field after electric signals are applied, ions in the ion storage layer can reach the color changing layer through the ion conducting layer, so that the acid-base characteristic of the color changing layer is changed, the color of dye in the color changing layer is changed when the acid-base characteristic is changed, and therefore the electro-chromic device is changed from transparent color to black. And if a reverse voltage is applied to the electrochromic device, the electrochromic device can be converted from black to transparent again.
According to a seventh inventive concept, a solar cell device includes: the solar cell comprises a conducting layer, an N-type semiconductor layer, an intrinsic semiconductor layer and a P-type semiconductor layer, wherein the solar cell device is made of a P-I-N type amorphous silicon film, the basic process of the P-I-N type amorphous silicon film solar cell device can be compatible with a panel production line, and the functions of the product are improved on the basis of not increasing the product cost greatly.
According to an eighth inventive concept, a display apparatus includes a power module and a connection line; the power module provides power for the display device, and the connecting wire is used for electrically connecting the power module and the conducting layer of the solar cell device, so that the power module of the display device is electrically connected with the solar cell device, and the electric energy converted by the solar cell device can be applied to the display device.
According to a ninth inventive concept, a driving method of a display device includes: when the display device is switched to the energy storage mode, a first signal loaded by the second data line is transmitted to the electrochromic device, so that the electrochromic device is in a transparent state under the control of the first signal; when the display device is switched to a display mode, the second signal loaded by the second data line is transmitted to the electrochromic device, so that the electrochromic device is in a black opaque state under the control of the second signal. In the display mode, the electrochromic device is in a black opaque state, so that the display contrast can be greatly improved, and the display picture quality is improved; in the energy storage mode, the electrochromic device is in a transparent state, light can smoothly irradiate the solar cell device, and the solar cell device absorbs ambient light and converts the ambient light into electric energy to supply power for the display device.
While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including preferred embodiments and all such alterations and modifications as fall within the scope of the invention.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.

Claims (10)

1. A display device, comprising:
the substrate base plate has supporting and bearing functions; the pixel unit is arranged on one side of the substrate and comprises a display area and a color changing area;
the micro light-emitting diode is positioned in the display area;
an electrochromic device located within the color-changing region; the electrochromic device is configured to assume a black opaque state when the display apparatus is switched to a display mode and a transparent state when the display apparatus is switched to an energy storage mode;
a solar cell device located between the substrate base plate and the electrochromic device; the orthographic projection of the electrochromic device on the substrate covers the orthographic projection of the solar cell device on the substrate.
2. The display device of claim 1, further comprising:
a plurality of gate lines extending in a first direction and arranged in a second direction; the first direction and the second direction intersect;
a plurality of first data lines extending in the second direction and arranged in the first direction;
a plurality of second data lines extending in the second direction and arranged in the first direction;
the first data lines and the second data lines are alternately arranged along the first direction; the grid line and the first data line divide the pixel unit;
the pixel unit further includes:
a first thin film transistor; the first thin film transistor comprises a first grid electrode, a first source electrode and a first drain electrode, the first grid electrode is connected with the grid line, the first source electrode is connected with the first data line, and the first drain electrode is connected with the miniature light emitting diode; the first thin film transistor transmits a signal of the first data line to the micro light emitting diode under the control of a signal of the gate line;
a second thin film transistor; the second thin film transistor comprises a second grid electrode, a second source electrode and a second drain electrode, the second grid electrode is connected with the grid line, the second source electrode is connected with the second data line, and the second drain electrode is connected with the electrochromic device; the second thin film transistor transmits a signal of the second data line to the electrochromic device under the control of a signal of the gate line.
3. The display device of claim 2, further comprising:
the driving circuit layer is positioned on one side of the solar cell device, which is far away from the substrate base plate, and is used for providing a driving signal; the driving circuit layer comprises the first thin film transistor, the second thin film transistor, a plurality of exposed first electrodes and a plurality of exposed second electrodes;
the micro light-emitting diode is positioned on one side of the driving circuit layer, which is far away from the substrate base plate, and the micro light-emitting diode is connected with the first electrode;
the electrochromic device is located on one side, away from the substrate base plate, of the driving line layer and connected with the second electrode.
4. The display device according to claim 3, wherein the driving line layer comprises:
the grid metal layer is positioned on the surface of one side of the substrate base plate; the grid metal layer comprises a first grid, a second grid and a grid line; the solar cell device and the grid metal layer are positioned on the surface of the same side of the substrate, and the pattern of the grid metal layer is not overlapped with the pattern of the solar cell device;
the grid electrode insulating layer is positioned on the grid electrode metal layer and the surface of one side of the solar cell device, which is far away from the substrate;
the active layer is positioned on the surface of one side, away from the gate metal layer, of the gate insulating layer;
the source drain metal layer is positioned on the surface of one side, away from the grid insulation layer, of the active layer; the source-drain metal layer comprises a first source electrode, a first drain electrode, a second source electrode, a second drain electrode, a first data line and a second data line;
the passivation layer is positioned on the surfaces of the active layer and the source drain metal layer on the side departing from the grid insulation layer; the passivation layer includes a via hole exposing the first drain electrode and the second drain electrode, the first electrode is electrically connected to the first drain electrode through the via hole of the passivation layer, and the second electrode is electrically connected to the second drain electrode through the via hole of the passivation layer;
the first gate electrode, the active layer, the first source electrode and the first drain electrode constitute the first thin film transistor; the second gate electrode, the active layer, the second source electrode, and the second drain electrode constitute the second thin film transistor.
5. The display device according to claim 4, wherein the gate metal layer further includes a fixed potential signal line; the gate insulating layer includes a via hole for exposing the fixed-potential signal line;
the source-drain metal layer also comprises a third electrode which is electrically connected with the fixed potential signal line through the through hole of the gate insulating layer;
the passivation layer further includes a via hole exposing the third electrode, and the first electrode is electrically connected to the third electrode through the via hole of the passivation layer.
6. The display device according to any one of claims 2 to 5, wherein the display device further comprises:
and the light shielding layer is positioned on the surface of one side of the driving circuit layer, which is far away from the substrate, and has a pattern covering the grid line, the first data line, the second data line, the first thin film transistor and the second thin film transistor.
7. The display device according to any one of claims 1 to 5, wherein the electrochromic device comprises:
a first transparent conductive layer;
an ion storage layer located on one side of the first conductive layer;
the ion conducting layer is positioned on one side, away from the first transparent conducting layer, of the ion storage layer;
a color changing layer located on one side of the ion conducting layer away from the ion storage layer;
the second transparent conducting layer is positioned on one side, far away from the ion conducting layer, of the color changing layer;
the first transparent conducting layer is arranged close to one side of the driving circuit layer; or the second transparent conducting layer is arranged close to one side of the driving circuit layer.
8. The display device according to any one of claims 1 to 5, wherein the solar cell device comprises:
the conducting layer is positioned on one side of the substrate base plate;
the N-type semiconductor layer is positioned on one side of the conducting layer, which is deviated from the substrate;
the intrinsic semiconductor layer is positioned on one side, away from the conducting layer, of the N-type semiconductor layer;
and the P-type semiconductor layer is positioned on one side of the intrinsic semiconductor layer, which is far away from the N-type semiconductor layer.
9. The display device of claim 8, further comprising a power module electrically connected to the conductive layer.
10. A driving method of a display device according to any one of claims 1 to 9, comprising:
when the display device is switched to an energy storage mode, controlling the electrochromic device to be switched to a transparent state so that the solar cell device converts ambient light into electric energy to supply power to the display device;
and when the display device is switched to a display mode, controlling the electrochromic device to be switched to a black opaque state.
CN202110177359.6A 2021-02-09 2021-02-09 Display device Pending CN114913782A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110177359.6A CN114913782A (en) 2021-02-09 2021-02-09 Display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110177359.6A CN114913782A (en) 2021-02-09 2021-02-09 Display device

Publications (1)

Publication Number Publication Date
CN114913782A true CN114913782A (en) 2022-08-16

Family

ID=82762330

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110177359.6A Pending CN114913782A (en) 2021-02-09 2021-02-09 Display device

Country Status (1)

Country Link
CN (1) CN114913782A (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103928474A (en) * 2014-03-28 2014-07-16 京东方科技集团股份有限公司 Array substrate, manufacturing method of array substrate and display panel
US20160246064A1 (en) * 2014-04-02 2016-08-25 Boe Technology Group Co., Ltd. Transparent display device
CN107680989A (en) * 2017-07-26 2018-02-09 友达光电股份有限公司 Double-Sided Display And Manufacturing Method Thereof
US20190206307A1 (en) * 2017-12-28 2019-07-04 X Development Llc Display with switchable background appearance
CN110112140A (en) * 2019-04-22 2019-08-09 深圳市华星光电半导体显示技术有限公司 A kind of display panel and preparation method thereof
CN110535211A (en) * 2019-09-18 2019-12-03 努比亚技术有限公司 Charge control method, terminal and computer readable storage medium

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103928474A (en) * 2014-03-28 2014-07-16 京东方科技集团股份有限公司 Array substrate, manufacturing method of array substrate and display panel
US20160246064A1 (en) * 2014-04-02 2016-08-25 Boe Technology Group Co., Ltd. Transparent display device
CN107680989A (en) * 2017-07-26 2018-02-09 友达光电股份有限公司 Double-Sided Display And Manufacturing Method Thereof
US20190206307A1 (en) * 2017-12-28 2019-07-04 X Development Llc Display with switchable background appearance
CN110112140A (en) * 2019-04-22 2019-08-09 深圳市华星光电半导体显示技术有限公司 A kind of display panel and preparation method thereof
CN110535211A (en) * 2019-09-18 2019-12-03 努比亚技术有限公司 Charge control method, terminal and computer readable storage medium

Similar Documents

Publication Publication Date Title
CN109859647B (en) Display panel and display device
WO2021233437A1 (en) Display device
US20190157341A1 (en) Micro led display panel with double-sides display
US20210043616A1 (en) Display apparatus and manufacturing method thereof
US11960158B2 (en) Display device
CN115843201A (en) Display panel and display device
KR20170142233A (en) Display apparatus
KR100653265B1 (en) Dual Panel Type Organic Electroluminescent Device and Method for Fabricating the same
CN112909204B (en) Display panel, manufacturing method thereof and display device
US20110157114A1 (en) Electroluminescence device
CN113013193B (en) Display device and method for manufacturing the same
WO2020062735A1 (en) Display panel, display screen, and display terminal
JP2005528641A (en) Thin film transistor array substrate for liquid crystal display
US11984434B2 (en) Light unit and display device including the same
CN114519962B (en) Transparent display device
CN114913782A (en) Display device
KR100567272B1 (en) Dual Panel Type Organic Electroluminescent Device and Method for Fabricating the same
CN100524794C (en) Active matrix organic electroluminescent device and fabricating method thereof
CN114171565A (en) Array substrate and display panel
CN114446186A (en) Transparent display device
KR20220048505A (en) Display device and method of fabricating the same
CN113707669A (en) Display device and manufacturing method thereof
CN111627379B (en) Display panel, display module and display device
CN115220269B (en) Display panel and display device
CN115911052A (en) Display device and display method thereof

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination