CN114910945A - Multilayer crystal, probe, and multilayer crystal bonding method - Google Patents
Multilayer crystal, probe, and multilayer crystal bonding method Download PDFInfo
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Images
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/202—Measuring radiation intensity with scintillation detectors the detector being a crystal
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/202—Measuring radiation intensity with scintillation detectors the detector being a crystal
- G01T1/2023—Selection of materials
Abstract
The application provides a multilayer crystal, a detector and a multilayer crystal bonding method, wherein the matrix species of at least two layers of the crystals in the multilayer crystal are the same, and the doping is different; a multilayer crystal bonding method comprising the steps of: polishing the contact surfaces of two adjacent scintillation crystals in the multilayer crystal by using polishing liquid; removing the polishing solution on the contact surface of the scintillation crystal; correspondingly contacting and heating the polished contact surfaces of the adjacent scintillation crystals; applying pressure to the scintillation crystal to strengthen intermolecular connections at the interface of the scintillation crystal; and (6) cooling. The multilayer crystal provided by the application adopts the same kind of crystal materials with different doping, and the coupling interface of the adjacent crystal can not be reflected and refracted, so that the transmission efficiency of visible photons is improved.
Description
Technical Field
The application relates to the field of detectors, in particular to a multilayer crystal, a detector and a multilayer crystal bonding method.
Background
The high-energy photon generally refers to a photon with energy of not less than 100eV, and includes X-ray, gamma-ray, alpha-particle, beta-particle, proton, and the like. The resolution capability of the high-energy photon detector for high-energy photon energy information, time information and space information directly determines the imaging quality of the detection system. The working principle of the high-energy photon detector is as follows: first, the high-energy photons interact with the scintillation crystal to convert the high-energy photons into visible light photons, which are incident on a photoelectric conversion device coupled to the scintillation crystal. The photoelectric conversion device converts incident visible light into an electrical signal, and an electronics system matched with the photoelectric conversion device outputs and collects a digital signal. Then, the information of time, energy, position and the like of the high-energy photon can be calculated from the digital signal by using a software algorithm.
For example, a Positron Emission Tomography (PET) system converts gamma photons into visible light signals by using a scintillation crystal, converts the visible light signals into electrical signals by using a photoelectric conversion device coupled to the scintillation crystal, and samples the electrical signals to obtain digital signals for signal processing, thereby obtaining information of time, energy, spatial Position, and the like of the gamma photons.
In a traditional multilayer crystal detector, each layer is made of different crystal materials, and the layers are coupled by materials such as optical glue. Due to different refractive indexes of different types of crystal materials, scintillation photons can generate reflection and refraction phenomena at a coupling interface of the crystal, the transmission efficiency of visible photons is reduced, the detection of Depth information of incident rays in the crystal is influenced, the imaging quality is reduced, and a Depth of Interaction (DOI) is generated.
The DOI effect causes smearing of the reconstructed image, and reduces the spatial resolution of the image, particularly the edge position of the field of view, which is more significant.
Disclosure of Invention
The application provides a multilayer crystal detector to solve the problem that reflection and refraction generated by a coupling interface of a scintillation crystal influence imaging quality.
According to an aspect of the present application, there is provided a multilayer crystal including: at least two layers of crystals, wherein each layer of the multi-layer crystals is bonded with each other, and the host species of the at least two layers of crystals are the same and the doping is different.
According to some embodiments, a coupling interface is arranged between two adjacent layers of the crystals, and each coupling interface is processed in a crystal bonding manner, so that the two adjacent layers of the crystals form a bond.
According to some embodiments, the root mean square roughness value in the range of 10 μm after polishing the contact surfaces of two adjacent layers of the crystals is less than 1.0 nm.
According to some embodiments, each of the scintillation crystals in the multilayer crystal employs a same kind of matrix, the matrix comprising: LSO, LYSO, LuAG, LuAP or GAGG.
According to some embodiments, the doping of each of the layers of the crystal comprises: luminescent ions and/or cations.
According to some embodiments, the luminescent ion comprises Ce, Pr, Nd, Pm, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb.
According to some embodiments, the cation comprises Sc, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Ca, Li, Mg, Zn, and Cu.
According to some embodiments, the molar percentage of the luminescent ion or the cation to the matrix is between 0.001% and 1%.
According to some embodiments, two adjacent layers of crystals have coupling interfaces therebetween, and each coupling interface is coupled by an optical coupling agent with the same refractive index as the crystal, so that each coupling interface does not generate reflection and refraction of photons.
According to some embodiments, each layer of the crystals comprises a plurality of scintillation crystals arranged in a matrix, each of the scintillation crystals in at least one layer of the crystals employing the same matrix but differing in doping of at least a portion of the scintillation crystals in the at least one layer of the crystals.
According to some embodiments, each layer of the crystals comprises a plurality of scintillation crystals arranged in a matrix, and adjacent scintillation crystals in each layer of the crystals are coupled by using an opaque material, crystal bonding or using an optical coupling agent with the same refractive index.
According to an aspect of the application, a detector is proposed, the detector comprising a multilayer crystal as described above, the detector further comprising a photoelectric converter coupled with the multilayer crystal.
According to some embodiments, the detector further comprises a light guide, the multilayer crystal and the photoelectric converter being coupled through the light guide.
According to an aspect of the present application, there is provided a multilayer crystal bonding method including the steps of: polishing the contact surfaces of two adjacent scintillation crystals in the multilayer crystal by using polishing liquid; removing the polishing liquid on the contact surface of the scintillation crystal; correspondingly contacting and heating the polished contact surfaces of the adjacent scintillation crystals; applying pressure to the scintillation crystal to strengthen intermolecular connections of the contact surfaces of the scintillation crystal; cooling the scintillation crystal.
According to some embodiments, after the polishing treatment is performed on the contact surfaces of two adjacent scintillation crystals, the polished contact surfaces of the scintillation crystals have a root mean square roughness value of less than 1.0nm in a range of 10 μm.
According to some embodiments, the temperature of the heating is between 1000 degrees and 1800 degrees.
According to some embodiments, the pressure applied to the scintillation crystal is less than 100 megapascals.
According to some exemplary embodiments of the application, by providing a multilayer crystal and a detector, the multilayer crystal and the detector adopt the same kind of crystal materials with different doping, and a bonding technology is adopted between adjacent crystals, so that the coupling interfaces of the adjacent crystals cannot be reflected and refracted, and the transmission efficiency of visible photons is improved. Therefore, the method is beneficial to judging the deposition position of the high-energy ray by utilizing the detected information such as the amplitude, the decay time, the peak wavelength and the like of the scintillation pulse, thereby realizing the acquisition of depth effect information.
According to some embodiments, adjacent crystals of the multilayer crystal are coupled by using an optical coupling agent with the same refractive index as the crystal material, so that the coupling interface of the adjacent crystals can not be reflected or refracted, and the transmission efficiency of visible photons can be improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings used in the description of the embodiments will be briefly introduced below.
FIG. 1a shows a side view of a multilayer crystal according to an example embodiment of the present application.
FIG. 1b shows a perspective view of a multilayer crystal according to an example embodiment of the present application.
FIG. 1c shows a schematic of a coupling interface of a multilayer crystal according to an example embodiment of the present application.
Fig. 2a shows a side view of a detector according to an exemplary embodiment of the present application.
Fig. 2b shows a perspective view of a detector according to an exemplary embodiment of the present application.
Fig. 2c shows a schematic view of a coupling interface of a multilayer crystal in a detector according to an exemplary embodiment of the present application.
Fig. 3 shows a flow chart of a crystal bonding method according to an example embodiment of the present application.
FIG. 4a shows the LSO: Ce, Pr doped X-ray excitation emission spectra.
FIG. 4b shows the LSO: Ce, Nd doped X-ray excitation emission spectra.
FIG. 4c shows the LSO: Ce, Eu doped X-ray excitation emission spectra.
Ce, Tb doped X-ray excitation emission spectrum.
FIG. 4e shows the LSO: Ce, Dy doped X-ray excitation emission spectra.
FIG. 4f shows the LSO: Ce, Yb doped X-ray excitation emission spectra.
Detailed Description
Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals denote the same or similar parts in the drawings, and thus, a repetitive description thereof will be omitted.
The described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided to give a thorough understanding of embodiments of the disclosure. One skilled in the relevant art will recognize, however, that the embodiments of the disclosure can be practiced without one or more of the specific details, or with other means, components, materials, devices, or operations. In such cases, well-known structures, methods, devices, implementations, materials, or operations are not shown or described in detail.
The flow charts shown in the drawings are merely illustrative and do not necessarily include all of the contents and operations/steps, nor do they necessarily have to be performed in the order described. For example, some operations/steps may be decomposed, and some operations/steps may be combined or partially combined, so that the actual execution sequence may be changed according to the actual situation.
The terms "first," "second," and the like in the description and claims of the present application and in the above-described drawings are used for distinguishing between different objects and not for describing a particular order. Furthermore, the terms "include" and "have," as well as any variations thereof, are intended to cover non-exclusive inclusions. For example, a process, method, system, article, or apparatus that comprises a list of steps or elements is not limited to only those steps or elements but may alternatively include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
Specific embodiments according to the present application will be described in detail below with reference to the accompanying drawings.
FIG. 1a shows a side view of a multilayer crystal according to an example embodiment of the present application. FIG. 1b shows a perspective view of a multilayer crystal according to an example embodiment of the present application. FIG. 1c shows a schematic diagram of a coupling interface of a multilayer crystal according to an example embodiment of the present application.
The multilayer crystal as shown in fig. 1a and 1b comprises four layers of crystals, each layer of crystals comprising a number of scintillation crystals coupled in a matrix form. As shown in fig. 1c, the crystal layer 1 and the crystal layer 2 are coupled by a coupling interface 1, the crystal layer 2 and the crystal layer 3 are coupled by a coupling interface 2, and the crystal layer 3 and the crystal layer 4 are coupled by a coupling interface 3.
The multilayer crystal converts high energy photons into visible light signals using a scintillation crystal and converts the visible light signals into electrical signals using a photoelectric converter coupled to the scintillation crystal. According to some example embodiments of the present application, the multilayer crystal contains scintillation crystals of the same kind, differently doped. Since the scintillation crystal uses the same kind of crystal material, a small amount of doping does not change its refractive index.
According to some embodiments, each of the multiple layered crystals employs the same type of matrix, wherein the matrix comprises Lutetium Silicate (LSO), Lutetium Yttrium Silicate (LYSO), Bismuth Silicate (BSO), lutetium aluminum garnet (LuAG), lutetium aluminum perovskite (LuAP), or Gadolinium Aluminum Gallium Garnet (GAGG).
For example, the same substrate is used for crystal layer 1, crystal layer 2, crystal layer 3 and crystal layer 4, and the substrate LYSO is selected.
According to some example embodiments of the present application, each of the multiple layers of crystals employs a different doping. For example, crystal layer 1, crystal layer 2, crystal layer 3, and crystal layer 4 are doped differently, with each crystal using a doping scheme that includes one or more light emitting ions and/or cations.
According to some embodiments, the luminescent ion comprises cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), and ytterbium (Yb).
According to some embodiments, the cation comprises scandium (Sc), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), and ytterbium (Yb), calcium (Ca), lithium (Li), magnesium (Mg), zinc (Zn), and copper (Cu).
For example, the crystal layer 1 is selected from a substrate LYSO including a dopant of a light emitting ion Ce; the crystal layer 2 selects a substrate LYSO, and comprises doping of two luminous ions Ce and Pr; crystal layer 3 is selected from substrate LYSO, including doping of a luminescent ion Ce and a cation Sc; crystal layer 4 is chosen to be the matrix LYSO, including doping of the two cations Sc, La.
As another example, the crystal layer 1 is a selective matrix GAGG comprising a doping of the luminescent ion Ce; crystal layer 2 selects a matrix GAGG, and comprises doping of two luminescent ions Nd and Pm and a cation Sc; the crystal layer 3 selects a substrate GAGG, and comprises two luminescent ions Sm and Eu and two cations Pr and Nd; the crystal layer 4 selects a matrix GAGG comprising the doping of three cations Er, Tm and Yb.
It should be noted by those skilled in the art that in the examples of the present application, "small amount" refers to a molar percentage of the luminescent ion or cation to the matrix of between 0.001% and 1%. According to various embodiments, the "small amount" may be any amount within this range, such as 0.1 mole percent of Ce doped into the first LYSO matrix, 0.2 mole percent of Ce doped into the second LYSO matrix and 0.3 mole percent of Pr doped into the second LYSO matrix, and 0.3 mole percent of Sc doped into the third LYSO matrix and 0.4 mole percent of La doped into the third LYSO matrix.
It should be understood by those skilled in the art that in the embodiments of the present application, "multiple layers" refers to a crystal with at least two layers, four layers in the above embodiments are merely used as examples and are not limited, and the specific number of layers can be determined comprehensively according to the energy of the high-energy photons and the requirement of the actual detection resolution, and will not be described herein again.
According to some embodiments of the present application, each scintillation crystal in at least one layer of crystals uses the same kind of matrix, but at least a portion of the scintillation crystals in the layer of crystals uses different doping, and the kind of matrix and the type and content of doping can be the same as in the above embodiments, and will not be described again.
According to some exemplary embodiments of the present application, the coupling interface between two adjacent layers of crystals of the multilayer crystal is formed by crystal bonding, so that the two adjacent layers of crystals form a bond. The bonding mode between two adjacent scintillation crystals in the same layer can be selected according to the needs, for example, for some detector applications, opaque materials are required to be wrapped or coated on the side faces of two adjacent scintillation crystals in the same layer to prevent visible light from entering other crystals; for some special detector applications, the sides of two scintillation crystals in the same layer may also need to be bonded by transparent crystals. The method for bonding two adjacent scintillation crystals can be seen in fig. 2.
According to some exemplary embodiments of the present application, each layer of crystals is made of a crystal material of the same kind and different doping, the crystal material is doped a small amount, and a bonding technology is adopted between adjacent crystals, so that the coupling interface of the adjacent crystals is not emitted and refracted, and not only can the transmission efficiency of visible photons be improved, but also the regulation and control of the scintillation pulse amplitude, the attenuation time and the peak wavelength of the digital signal for signal processing can be realized.
According to some example embodiments of the present application, coupling interfaces between two adjacent layers of crystals of the multilayer crystal are each coupled using an optical couplant having the same refractive index, such that the two adjacent layers of crystals form a bond. The bonding mode between two adjacent crystals in the same layer can be selected according to the needs, for example, for some detector applications, opaque materials are required to be wrapped or coated on the side surfaces of two adjacent crystals in the same layer to prevent visible light from entering other crystals; for some special detector applications, the sides of two crystals in the same layer may also need to be bonded by a transparent crystal. Of course, the sides of two crystals in the same layer can also be coupled using optical couplants with the same refractive index.
According to some exemplary embodiments of the present application, each layer of crystals is made of the same kind of crystal material with different doping, and the coupling interfaces between adjacent crystals are coupled by using the optical coupling agent with the same refractive index, so that gamma photons are not reflected and refracted at the coupling interfaces, and the transmission efficiency of visible photons can be improved.
Fig. 2a shows a side view of a detector according to an exemplary embodiment of the present application. Fig. 2b shows a perspective view of a detector according to an exemplary embodiment of the present application. Fig. 2c shows a schematic view of a coupling interface of a multilayer crystal in a detector according to an exemplary embodiment of the present application.
The multilayer crystal detector shown in fig. 2a and 2b comprises a multilayer crystal as described in the embodiment of fig. 1, the multilayer crystal comprising four layers of crystals, and a photoelectric converter coupled to the multilayer crystal. Wherein, each layer of crystal can adopt the coupling mode as described in the embodiment of fig. 1, and different coupling modes can be selected between the crystal layer 4 and the photoelectric converter, such as coupling by a coupling agent, or optical coupling, or bonding.
According to the embodiment shown in fig. 2a to 2c, by providing a detector with multilayer crystals, the multilayer crystals in the detector are made of scintillation crystal materials of the same kind and different doping, and adjacent scintillation crystals are coupled by using a bonding technique or using an optical coupling agent having the same refractive index as the scintillation crystal material, so that the coupling interfaces of the adjacent scintillation crystals are not reflected and refracted, and the transmission efficiency of visible photons is improved. Therefore, the method is beneficial to judging the deposition position of the gamma ray by utilizing the detected information such as the amplitude, the decay time, the peak wavelength and the like of the scintillation pulse, thereby realizing the acquisition of depth effect information.
Fig. 3 shows a flow chart of a crystal bonding method according to an example embodiment of the present application. A crystal bonding method according to an exemplary embodiment of the present application will be described in detail with reference to fig. 3.
In step S301, the contact surfaces of two adjacent scintillation crystals in the multilayer crystal are polished with a polishing liquid, so that the Root Mean Square (RMS) value of the polished contact surfaces of the two scintillation crystals in the range of 10 μm is less than 1.0 nm.
In step S303, the polishing liquid on the contact surfaces of two adjacent scintillation crystals is removed.
According to some embodiments, two adjacent scintillation crystals which are subjected to the surface treatment in step S301 are placed in deionized water for ultrasonic cleaning to remove the polishing liquid remaining on the surfaces of the scintillation crystals.
In step S305, the polished contact surfaces of two adjacent scintillation crystals are correspondingly contacted and heated.
According to some embodiments, the coupling surfaces of the two scintillation crystals processed in step S303 are correspondingly contacted and heated to a certain temperature according to the designed array shape. For example, the temperature is 1300 to 1800 degrees.
According to some embodiments, the heating time can be determined according to the bonding strength, and different heating times can obtain different coupling strengths, which can be easily appreciated by those skilled in the art according to the teaching of the present application and will not be described herein.
In step S307, pressure is applied to two adjacent scintillation crystals to strengthen the intermolecular connection of the contact surfaces of the scintillation crystals.
According to some embodiments, a pressure of less than 100 mpa is applied to the two scintillation crystals processed in step S305 to strengthen the intermolecular connection of the contact surfaces of the two scintillation crystals.
According to some embodiments, before applying pressure to the two scintillation crystals in step S307, optical couplants with the same refractive index are disposed on the contact surfaces of the scintillation crystals on both sides, and then pressure is applied to the two crystals to strengthen the intermolecular connection between the contact surfaces of the two scintillation crystals.
In step S309, the scintillation crystal is cooled, whereupon a bonded scintillation crystal is formed.
According to some embodiments, the cooling may be achieved by self-cooling at room temperature, or by water cooling or air cooling at room temperature, which is not described herein again.
FIGS. 4 a-4 f show X-ray excitation emission spectra for differently doped LYSO scintillation crystals according to embodiments of the present application. Wherein, the differently doped LYSO scintillation crystals comprise Dy LSO, Tb LSO, Eu LSO, Pr LSO, Nd LSO and Yb LSO.
For example, the case of LSO and Yb indicates that the scintillation crystal matrix adopts LSO and adopts Yb doping, and other doping schemes adopt the same indication, which is not described again.
After the ultraviolet irradiation, the colors displayed by different doping schemes are different, and the colors are deepened according to the sequence of LSO Dy, LSO Tb, LSO Eu, LSO Pr, LSO Nd and LSO Yb. Therefore, different doping schemes can affect the performances of the scintillation crystal such as peak wavelength, light output or decay time, and the like, so that more-dimensional front-end measurement information is provided for acquiring the response depth of the multilayer crystal.
FIG. 4a shows LSO: Ce, Pr doped X-ray excitation emission spectra, FIG. 4b shows LSO: Ce, Nd doped X-ray excitation emission spectra, FIG. 4c shows LSO: Ce, Eu doped X-ray excitation emission spectra, FIG. 4d shows LSO: Ce, Tb doped X-ray excitation emission spectra, FIG. 4e shows LSO: Ce, Dy doped X-ray excitation emission spectra, FIG. 4f shows LSO: Ce, Yb doped X-ray excitation emission spectra.
Taking LSO, Ce and Pr as examples, the scintillation crystal matrix adopts LSO, adopts Ce and Pr doping, and other doping schemes adopt the same representation, and are not described again.
As shown in fig. 4a to 4f, the scintillation crystal is doped with other luminescent ions and/or cations, so that the scintillation wavelength information of the scintillation crystal becomes richer, wherein the new emission peaks of the LSO, Ce and Pr are 464nm, 509nm, 545nm, 614nm, 738nm and 772 nm; the new emission peaks of Ce and Nd are 544nm, 608nm and 774 nm; LSO, Ce, Eu newly added emission peaks are 540nm, 608nm and 778 nm; the new emission peaks of Ce and Tb are 383nm, 415nm, 435nm, 545nm, 768nm, 827nm and 872 nm; the newly added emission peaks of Ce and Dy as LSO are 481nm, 539nm, 573nm and 782 nm; the new emission peaks of LSO, Ce and Yb are 536nm, 606nm and 776 nm. The added peak wavelength characteristic information can be used as a basis for judging DOI information.
Although the present application provides method steps as described in the above embodiments or flowcharts, additional or fewer steps may be included in the method, based on conventional or non-inventive efforts. In the case of steps where no necessary causal relationship exists logically, the order of execution of the steps is not limited to that provided by the embodiments of the present application.
The embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments.
According to some exemplary embodiments of the application, by providing a multilayer crystal and a detector, the multilayer crystal adopts scintillation crystal materials of the same kind and different doping, and a bonding technology is adopted between adjacent scintillation crystals, so that the coupling interfaces of the adjacent scintillation crystals can not be reflected and refracted, and the transmission efficiency of visible photons is improved. Therefore, the method is beneficial to judging the deposition position of the high-energy ray by utilizing the detected information such as the amplitude, the decay time, the peak wavelength and the like of the scintillation pulse, thereby realizing the acquisition of depth effect information.
According to some embodiments, adjacent scintillation crystals of the multilayer crystal detector are coupled by using an optical coupling agent with the same refractive index as that of the scintillation crystal material, so that the coupling interfaces of the adjacent scintillation crystals are not reflected or refracted, and the transmission efficiency of visible photons is improved.
The foregoing detailed description of the embodiments of the present application has been presented to illustrate the principles and implementations of the present application, and the description of the embodiments is only intended to facilitate the understanding of the methods and their core concepts of the present application. Meanwhile, a person skilled in the art should, according to the idea of the present application, change or modify the embodiments and applications of the present application based on the scope of the present application. In view of the above, the description should not be taken as limiting the application.
Claims (17)
1. A multilayer crystal characterized in that,
each layer in the multilayer crystal is mutually bonded, and the matrix species of at least two layers of the crystal are the same and the doping is different.
2. The multilayer crystal of claim 1, wherein a coupling interface is provided between two adjacent layers of the crystal, and each coupling interface is formed by crystal bonding, so that the two adjacent layers of the crystal form a bond.
3. The multilayer crystal according to claim 2, wherein the root mean square roughness value in the range of 10 μm after polishing treatment of the contact surfaces of two adjacent layers of the crystal is less than 1.0 nm.
4. A multilayer crystal according to claim 1, wherein each layer of the crystal in the multilayer crystal employs the same kind of matrix, the matrix comprising: LSO, LYSO, LuAG, LuAP or GAGG.
5. A multilayer crystal as defined in claim 1, wherein the doping of each layer of the crystal in the multilayer crystal comprises: luminescent ions and/or cations.
6. A multilayer crystal according to claim 5, wherein the light emitting ion comprises Ce, Pr, Nd, Pm, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb.
7. A multilayer crystal according to claim 5, wherein the cations comprise Sc, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Ca, Li, Mg, Zn and Cu.
8. A multilayer crystal according to claim 5, wherein the molar percentage of the luminescent ion or cation to the matrix is between 0.001% and 1%.
9. The multilayer crystal of claim 1, wherein there is a coupling interface between two adjacent layers of crystals, each coupling interface being coupled with an optical coupling agent having the same refractive index as the crystals, such that each coupling interface does not produce reflection or refraction of photons.
10. The multilayer crystal of claim 1, wherein each layer of the crystal comprises a plurality of scintillation crystals arranged in a matrix, each of the scintillation crystals in at least one layer of the crystal employing the same matrix but differing in doping of at least a portion of the scintillation crystals in the at least one layer of the crystal.
11. The multilayer crystal of claim 1, wherein each layer of the crystal comprises a plurality of scintillation crystals arranged in a matrix, and adjacent scintillation crystals in each layer of the crystal are coupled by opaque material, crystal bonding, or optical couplant with the same refractive index.
12. A detector comprising a multilayer crystal according to any of claims 1-11, the detector further comprising a photoelectric converter coupled to the multilayer crystal.
13. The detector of claim 12, further comprising a light guide through which the multilayer crystal and the photoelectric converter are coupled.
14. A multilayer crystal bonding method, comprising the steps of:
polishing the contact surfaces of two adjacent scintillation crystals in the multilayer crystal by using polishing liquid;
removing the polishing liquid on the contact surface of the scintillation crystal;
correspondingly contacting and heating the polished contact surfaces of the adjacent scintillation crystals;
applying pressure to the scintillation crystal to strengthen intermolecular connections of the contact surfaces of the scintillation crystal;
cooling the scintillation crystal.
15. The multilayer crystal bonding method according to claim 14, wherein after polishing treatment is performed on the contact surfaces of two adjacent scintillation crystals, the polished contact surfaces of the scintillation crystals have a root mean square roughness value of less than 1.0nm in a range of 10 μm.
16. The multilayer crystal bonding method according to claim 14, wherein the heating temperature is 1000 to 1800 degrees.
17. The multilayer crystal bonding method of claim 14, wherein the pressure applied to the scintillation crystal is less than 100 megapascals.
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| CN202210372850.9A CN114910945A (en) | 2022-04-11 | 2022-04-11 | Multilayer crystal, probe, and multilayer crystal bonding method |
| PCT/CN2022/136855 WO2023197627A1 (en) | 2022-04-11 | 2022-12-06 | Multilayer crystal, detector and multilayer crystal bonding method |
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| WO2023197627A1 (en) * | 2022-04-11 | 2023-10-19 | 苏州瑞派宁科技有限公司 | Multilayer crystal, detector and multilayer crystal bonding method |
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| US5616924A (en) * | 1995-10-16 | 1997-04-01 | Picker International, Inc. | Optical enhancements to scintillating systems using dynamically controlled materials |
| CN102064229A (en) * | 2010-09-14 | 2011-05-18 | 中国科学院苏州纳米技术与纳米仿生研究所 | High resistance GaN room temperature nuclear detector and preparation method thereof |
| RU2013155081A (en) * | 2011-05-12 | 2015-06-20 | Конинклейке Филипс Н.В. | Optimized scintillating crystals for retomography |
| DE102014225541A1 (en) * | 2014-12-11 | 2016-06-16 | Siemens Healthcare Gmbh | Detection layer comprising perovskite crystals |
| CN209400708U (en) * | 2018-12-17 | 2019-09-17 | 苏州瑞派宁科技有限公司 | Composite detecting device and system |
| CN114236592A (en) * | 2021-11-11 | 2022-03-25 | 东软医疗***股份有限公司 | Combined imaging detector module, preparation method thereof and imaging device |
| CN114910945A (en) * | 2022-04-11 | 2022-08-16 | 苏州瑞派宁科技有限公司 | Multilayer crystal, probe, and multilayer crystal bonding method |
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