CN114891295A - High-voltage direct-current cable and polypropylene semi-conductive shielding material and preparation method thereof - Google Patents
High-voltage direct-current cable and polypropylene semi-conductive shielding material and preparation method thereof Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
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- C08L23/02—Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers not modified by chemical after-treatment
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L23/00—Compositions of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Compositions of derivatives of such polymers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B11/00—Communication cables or conductors
- H01B11/02—Cables with twisted pairs or quads
- H01B11/06—Cables with twisted pairs or quads with means for reducing effects of electromagnetic or electrostatic disturbances, e.g. screens
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B9/00—Power cables
- H01B9/02—Power cables with screens or conductive layers, e.g. for avoiding large potential gradients
- H01B9/021—Features relating to screening tape per se
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- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/001—Conductive additives
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- C08L2203/00—Applications
- C08L2203/20—Applications use in electrical or conductive gadgets
- C08L2203/202—Applications use in electrical or conductive gadgets use in electrical wires or wirecoating
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
- Y02A30/00—Adapting or protecting infrastructure or their operation
- Y02A30/14—Extreme weather resilient electric power supply systems, e.g. strengthening power lines or underground power cables
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Abstract
The invention discloses a high-voltage direct-current cable, a polypropylene semi-conductive shielding material thereof and a preparation method, and relates to the technical field of high-voltage direct-current cable materials. The semiconductive shielding material is prepared from 100 parts by weight of a polypropylene base material and an elastomer base material, 20-30 parts by weight of an additional conductive filler and 0.3-0.4 part by weight of an antioxidant, wherein the elastomer base material is one or two of a propylene-based elastomer and a polyethylene octene co-elastomer, polyethylene or ethylene is not contained, and the melt flow rate of the polyethylene octene co-elastomer is not lower than 25g/10min at 190 ℃ under the measurement condition of 2.16 kg. The invention has reasonable raw material composition and proportion, does not contain materials capable of generating cross linking, effectively reduces space charge injection and accumulation, can be recycled, and meets the requirements of environment-friendly cables.
Description
Technical Field
The invention relates to the technical field of high-voltage direct-current cable materials, in particular to a semi-conductive shielding material of a high-voltage direct-current cable, a preparation method of the semi-conductive shielding material, a semi-conductive shielding layer using the semi-conductive shielding material, and a high-temperature-resistant high-voltage direct-current cable comprising the semi-conductive shielding layer.
Background
With the continuous construction and operation of high-voltage direct-current transmission engineering in the global scope, the material taking XLPE as an insulating layer is exposed to more and more problems in production and operation: the maximum operating temperature of the cable can reach 90 ℃, but the maximum operating temperature of the existing XLPE cable is only 70 ℃, and a crosslinking process can generate byproducts, so that the charge accumulation phenomenon is aggravated.
In the XLPE insulated cable material, the patent CN105131413A and the patent CN109836686A generally have cross-linking by-products such as methyl styrene, acetophenone, benzyl alcohol, etc. which affect the space charge distribution; patent CN113150438A is to add a substrate into one of toluene or xylene as a solvent for blending, then to carry out drying, water cooling and grain cutting, and the like, wherein the solvent has irritation to skin and mucosa and has anesthetic action on central nervous system, and the product with higher concentration can be absorbed in short time to cause obvious irritation symptoms of eyes and upper respiratory tract, congestion of eye conjunctiva and pharynx, dizziness, headache, nausea, vomiting, chest distress, myasthenia of limbs, teeter gait and vague consciousness, and serious patients can have restlessness, convulsion and coma; the patent CN110591216A contains polycarbonate in the material composition, and since bisphenol a is required to be added in the production of polycarbonate, and bisphenol a is a chemical raw material, which has been officially recognized as a toxic substance by the federal government in canada 4.18.2008, this production method may cause a certain harm to the health of the processor during the processing.
Compared with polyethylene, polypropylene has a higher melting point, and can meet the requirement of higher cable operation temperature. The polypropylene is used as an insulating material, has good mechanical strength and insulating property without crosslinking, is a typical thermoplastic material, can be recycled, meets the requirements of environment-friendly cables, and simultaneously meets the targets of carbon neutralization and carbon peak reaching proposed in the current country. When the cable insulation material changes, the corresponding semiconductive shield and insulation shield should also be replaced. The polypropylene composite material is better matched with a polypropylene insulating layer, and the injection and accumulation of space charge are reduced. Therefore, the invention provides a semiconductive shielding layer material matched with a polypropylene insulating layer and a preparation method thereof.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide a material for a polypropylene semi-conductive shielding layer of a high-voltage direct-current cable and a preparation method thereof. The conductive material has good mechanical property, heat resistance, stable conductivity, non-crosslinking property, reduced injection and accumulation phenomena of space charge, environmental protection and easy recycling.
The invention provides a material for a polypropylene semi-conductive shielding layer of a high-voltage direct-current cable, which is prepared from 100 parts by weight of a polypropylene base material and an elastomer base material, 20-30 parts by weight of an additional conductive filler and 0.3-0.4 part by weight of an antioxidant, wherein the elastomer base material is one or two of a propylene-based elastomer and a polyethylene octene co-elastomer, polyethylene or ethylene is not contained, and the melt flow rate of the polyethylene octene co-elastomer is not lower than 25g/10min under the measurement conditions of 190 ℃ and 2.16 kg.
According to the similar compatibility principle, the propylene-based elastomer can be well combined with the polypropylene-based material to form a good crystal interface, so that the overall performance of the material is improved; the polyethylene octene co-elastomer with the melting flow rate of not less than 25g/10min shows excellent processing fluidity, and can be blended with the polypropylene base material to enhance the toughness and refine the polypropylene base material crystals. In addition, the ingredients of the invention do not contain materials such as polyethylene or ethylene which can be crosslinked, which is beneficial to reducing the possibility of crosslinking from the source of raw materials, and further avoiding the phenomenon of charge accumulation caused by or aggravated by the crosslinking process.
Meanwhile, the copper-resistant agent and the lubricating dispersant are not required to be added, and the copper-resistant agent is widely applied to copper-core wires and cables which take polyethylene, polypropylene and the like as insulating materials, has good compatibility with resin and has the effect of improving the dispersibility. The lubricating dispersant can be adsorbed on the surface of carbon black particles to achieve the purposes of modifying and dispersing the conductive carbon black, if the type selection of the dispersant is not proper or the dosage is insufficient, the result is appropriate, and the dispersant cannot reach a dispersion state, so that the addition of the lubricating dispersant not only needs to be strictly controlled, but also improves the production cost to a certain extent. The invention achieves the aim of uniform dispersion by reasonably controlling the material type, the proportion and the melting rate and fully mixing all the raw materials in the internal mixer, thereby avoiding adding a copper resisting agent and a lubricating dispersant, and being beneficial to reducing the operation complexity and the cost.
The polypropylene base material is 35-45 parts, and further 38-43 parts. Accordingly, 65 to 55 parts, and further 62 to 57 parts, of a propylene-based elastomer and/or a polyethylene octene co-elastomer as an elastomer base material.
The melt flow index of the propylene-based elastomer is 2-5 g/10min under the measurement conditions of 230 ℃ and 2.16kg, the melt flow index of the polyethylene octene co-elastomer is 30-40 g/10min under the measurement conditions of 190 ℃ and 2.16kg, the melt flow index of the propylene-based elastomer is 2-5 g/10min under the measurement conditions of 230 ℃ and 2.16kg, and the melt flow index of the polyethylene octene co-elastomer is 33-37 g/10min under the measurement conditions of 190 ℃ and 2.16 kg.
The conductive filler is conductive carbon black, the resistivity is 0.8-1.0 omega-cm, the iodine absorption value is 800-1000 g/kg, the DBP oil absorption value is more than or equal to 300ml/100g, the ash content is less than or equal to 1.5%, the particle size is less than or equal to 20nm, and the conductive filler is soft flaky particles.
The semiconductive shielding layer is made of any one of the semiconductive shielding materials.
A high-temperature-resistant high-voltage direct-current cable comprises a conductive core, a semi-conductive shielding layer and a polypropylene insulating layer, wherein the conductive core, the semi-conductive shielding layer and the polypropylene insulating layer are sequentially arranged in place, the polypropylene insulating layer wraps the semi-conductive shielding layer, and polyethylene is not contained.
The charge injection amount of the semi-conductive shielding layer of the high-temperature-resistant high-voltage direct-current cable at 80-100 ℃ is reduced by more than 40% relative to that of the polyethylene cable shielding layer.
In another aspect of the present invention, a method for preparing a semiconductive shielding material of a high voltage dc cable is provided, the method comprising the steps of:
s1, setting the temperature of the internal mixer, and adding the polypropylene base material, wherein the temperature can melt the polypropylene base material;
s2, adding the elastomer base stock for blending;
s3, slowly adding the conductive filler and blending;
s4, adding an antioxidant, and continuing blending;
and S5, completing blending to obtain the semiconductive shielding material.
The temperature setting range of the internal mixer is 180-275 ℃.
The master batch and the carbon black are sequentially added into the internal mixer by directly adopting a melt blending method, the internal mixing process is closed, the contact with the outside is reduced, and the oxidation and the entering of other impurities at high temperature are prevented.
The beneficial effects of the invention comprise at least one of the following:
1. the semiconductive shielding layer material provided by the application can be better matched with a polypropylene insulating material, and does not contain polyethylene or ethylene, so that the occurrence of crosslinking is reduced, the semiconductive shielding layer material provided by the application has high melting point, strong rigidity, good wear resistance and good dielectric property, and meanwhile, the raw materials used by the application are harmless and nontoxic, and are environment-friendly and human-friendly materials in the processing, using or running processes;
2. compared with the preparation of an XLPE semiconductive shielding layer material, the preparation processes of all the semiconductive shielding layer materials do not have a crosslinking phenomenon, so that byproducts generated in the crosslinking process do not need to be considered, the entering of impurities in an insulating layer and a shielding layer is greatly reduced, the space charge injection and accumulation are effectively reduced, meanwhile, the non-crosslinking also means that the materials can be recycled, and the requirements of environment-friendly cables are met;
3. the semiconductive shielding layer obtained by using the semiconductive shielding layer material prepared by the method passes the test of variable temperature resistivity, the volume resistivity of the semiconductive shielding layer is less than 50 omega-cm at 25 ℃ and less than 80 omega-cm at 90 ℃, and the semiconductive shielding layer meets the requirements on the volume resistivity of the semiconductive shielding layer of the high-voltage direct-current cable in national standards, namely the volume resistivity of the semiconductive shielding layer is less than 100 omega-cm at 25 ℃ and less than 1000 omega-cm at 90 ℃. The volume resistivity of the semiconductive shield material also exhibits a relatively low resistivity (e.g., less than 80 Ω · cm) at higher temperatures, such as 100 ℃ to 140 ℃, has good electrical properties and a small temperature dependence with little change in resistivity with temperature.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the application and together with the description serve to explain the application and not to limit the application. In the drawings:
fig. 1 illustrates the temperature change resistance rate performance of a semiconductive shield layer made by an exemplary embodiment of the present invention.
Detailed Description
In order to more clearly explain the overall concept of the invention, the following detailed description is given by way of example in conjunction with the accompanying drawings.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, however, the present invention may be practiced in other ways than those specifically described herein, and therefore the scope of the present invention is not limited by the specific embodiments disclosed below.
In addition, in the description of the present invention, it is to be understood that the terms "top," "bottom," "inner," "outer," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the present invention and simplicity in description, and do not indicate or imply that the referenced devices or elements must have a particular orientation, be constructed in a particular orientation, and be operated, and thus are not to be construed as limiting the present invention.
In the present invention, unless otherwise expressly specified or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; the connection can be mechanical connection, electrical connection or communication; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
Example 1 preparation method of semiconductive shielding material of high voltage direct current cable
The embodiment prepares the semiconductive shielding material of the high-voltage direct-current cable, and the material is prepared by adopting the following method:
the total amount of the polypropylene base material and the polyethylene octene co-elastomer is 100 parts, wherein the weight ratio of the polypropylene base material to the polyethylene octene co-elastomer is 40: 60, the polypropylene base material is isotactic polypropylene, and the melt flow index of the polyethylene octene co-elastomer is 35g/10min under the measurement conditions of 190 ℃ and 2.16 kg. For example, the polyethylene octene co-elastomer may be POE-8401 from Dow, USA.
The conductive carbon black accounts for 25 parts, and the related characteristics of the conductive carbon black meet the following requirements: the resistivity is 0.8-1.0 omega cm, the iodine absorption value is 800-1000 g/kg, the DBP oil absorption value is more than or equal to 300ml/100g, the ash content is less than or equal to 1.5%, the particle size is less than or equal to 20nm, and the appearance is soft flaky particles.
0.3 part of antioxidant 300.
Taking a proper amount of dried materials according to the mass of the total mixed materials for melt blending, and specifically comprising the following steps:
s1, setting the temperature of the 1#, 2#, and 3# regions of the internal mixer to 180 ℃, and adding 40 parts of polypropylene base material;
s2, after 5min, adding 60 parts of polyethylene octene co-elastomer and blending for 6.5 min;
s3, slowly adding 25 parts of conductive carbon black, and melting and blending for 10min to fully and uniformly mix;
s4, adding 0.3 part of antioxidant 300, and continuously blending for 5 min;
and S5, finishing blending, stopping running, and taking and shearing materials for subsequent use.
Example 2
In this example, another semiconductive shielding material for a high voltage dc cable is prepared by the following method:
the total 100 parts of the polypropylene base material and the propenyl elastomer, wherein the weight ratio of the polypropylene base material to the propenyl elastomer is 38: 62, the polypropylene base material is isotactic polypropylene, and the melt flow index of the propylene-based elastomer is 2.0g/10min under the measurement conditions of 230 ℃ and 2.16 kg. For example, the propylene-based elastomer may be VERSIFY 2200 model from dow, usa.
The conductive carbon black accounts for 25 parts, and the related characteristics of the conductive carbon black meet the following requirements: the resistivity is 0.8-1.0 omega cm, the iodine absorption value is 800-1000 g/kg, the DBP oil absorption value is more than or equal to 300ml/100g, the ash content is less than or equal to 1.5%, the particle size is less than or equal to 20nm, and the appearance is soft flaky particles.
0.3 part of antioxidant 300.
Taking a proper amount of dried materials according to the mass of the total mixed materials for melt blending, and specifically comprising the following steps:
s1, setting the temperature of the 1#, 2#, and 3# regions of the internal mixer to 180 ℃, and adding 38 parts of polypropylene base material;
s2, after 5min, adding 62 parts of propenyl elastomer and blending for 6.5 min;
s3, slowly adding 25 parts of conductive carbon black, and melting and blending for 10min to fully and uniformly mix;
s4, adding 0.3 part of antioxidant 300, and continuously blending for 5 min;
and S5, finishing blending, stopping running, and taking and shearing materials for subsequent use.
Embodiment 3 semi-conductive Shielding layer of high Voltage direct Current Cable
The semiconductive shield material prepared in example 1 was preheated in a press at 190 ℃ for 6min, then hot-pressed at 190 ℃ and 10MPa to a 10 x 1mm semiconductive sheet for electrical performance testing.
Example 4
The semiconductive shield layer material prepared in example 2 was preheated in a press vulcanizer at 190 ℃ for 6min, then hot-pressed at 190 ℃ and 10MPa to form 10 × 1mm semiconductive sheets for electrical performance testing.
Comparative example 1
The purchased polyethylene semiconductive shielding layer material was preheated in a vulcanizing press at 190 ℃ for 6min, then hot-pressed at 190 ℃ and 10MPa into 10 × 1mm semiconductive sheets, and subjected to electrical performance testing.
Fig. 1 shows the temperature change resistance performance test results of the semiconductive shielding layers prepared in the above exemplary embodiments 3 to 4, and the experimental conditions of the relevant tests are as follows: selecting a 115 x 50 x 1mm semi-conductive sheet, testing the resistivity of the semi-conductive composite material by using a semi-conductive resistivity tester, wherein the testing temperature range is 30-140 ℃, keeping the temperature for 30min after 10 ℃ per liter, and taking the resistivity value at the 24min as the volume resistivity of the semi-conductive composite material at the temperature. As can be seen from the figure, the resistivity of the semiconductive shielding layer used for the polyethylene cable is 32.7 omega cm at 30 ℃, but the resistivity of the shielding layer is continuously increased when the temperature is continuously increased, and can reach 370 omega cm at most. Therefore, the resistivity of the semiconductive shielding layer used for the polyethylene cable has large change along with temperature, and has high temperature dependence. When the variable temperature resistivity of the semiconductive shielding layers prepared from the composite materials in the embodiments 3 and 4 is observed, it can be seen that the two semiconductive shielding layers can also keep lower resistivity at high temperature, the change along with the temperature is small, and the semiconductive shielding layers have better electrical properties. For example, the volume resistivity of the semiconductive shield material of the present invention is less than 50 Ω · cm at 25 ℃, less than 80 Ω · cm at 90 ℃, and less than 80 Ω · cm at 100 ℃ to 140 ℃.
The polypropylene cable shield layers prepared in the above-described exemplary examples 3 to 4 and the polyethylene cable shield layer of comparative example 1 were respectively subjected to interface matching with a polypropylene insulating layer, and the space charge injection conditions of the insulating layers were investigated, as shown in table 1. The relevant experimental conditions for table 1 are: the semi-conducting layer and the insulating layer are respectively selected from a sample with the thickness of 0.3mm, the sample is tightly contacted with the upper electrode and the lower electrode by using silicone oil, and experiments are carried out in a constant temperature box at 90 ℃ by adopting a PEA space charge testing system.
TABLE 1
From table 1, it can be seen that the semiconductive shielding layer prepared by the present invention and the polypropylene insulating layer have smaller charge injection, and compared with the polyethylene cable shielding layer, the charge injection is reduced by more than 40%. Therefore, the semi-conductive shielding layer and the polypropylene insulating layer have good matching performance, injection of space charge of the insulating layer is effectively reduced, and the service life of the cable can be prolonged.
The above description is only an example of the present invention, and is not intended to limit the present invention. Various modifications and alterations to this invention will become apparent to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.
Claims (10)
1. A semi-conductive shielding material of a high-voltage direct-current cable is characterized by being prepared from 100 parts by weight of polypropylene base material and elastomer base material, 20-30 parts by weight of conductive filler and 0.3-0.4 part by weight of antioxidant,
the elastomer base material is one or two of a propylene-based elastomer and a polyethylene octene co-elastomer, and does not contain polyethylene or ethylene, and the melt flow rate of the polyethylene octene co-elastomer is not lower than 25g/10min at 190 ℃ under the measurement condition of 2.16 kg.
2. The semiconductive shield material of claim 1, wherein the polypropylene base stock is 35 to 45 parts, further 38 to 43 parts.
3. The semiconductive shield material of claim 1, wherein the propylene-based elastomer has a melt flow index of 2 to 5g/10min at 230 ℃ under 2.16kg measurement, the polyethylene octene co-elastomer has a melt flow index of 30 to 40g/10min at 190 ℃ under 2.16kg measurement, further wherein the propylene-based elastomer has a melt flow index of 2 to 5g/10min at 230 ℃ under 2.16kg measurement, and the polyethylene octene co-elastomer has a melt flow index of 33 to 37g/10min at 190 ℃ under 2.16kg measurement.
4. The semiconductive shielding material according to claim 1, wherein the conductive filler is conductive carbon black, the resistivity is 0.8 to 1.0 Ω/cm, the iodine absorption value is 800 to 1000g/kg, the DBP oil absorption value is not less than 300ml/100g, the ash content is not more than 1.5%, the particle size is not more than 20nm, and the conductive filler is soft flaky particles.
5. A semi-conductive shielding layer of a high-voltage direct-current cable, characterized in that the semi-conductive shielding layer is made of the semi-conductive shielding material as claimed in any one of claims 1 to 4.
6. A high temperature and high voltage direct current resistant cable, characterized in that the high temperature and high voltage direct current resistant cable comprises a conductive core, a semi-conductive shielding layer according to claim 5 wrapping the conductive core and a polypropylene insulating layer wrapping the semi-conductive shielding layer which are sequentially arranged from inside to outside, and polyethylene is not contained.
7. The high-temperature-resistant high-voltage direct current cable according to claim 6, wherein the charge injection amount of the semiconductive shielding layer of the high-temperature-resistant high-voltage direct current cable at 80-100 ℃ is reduced by more than 40% relative to the polyethylene cable shielding layer.
8. The preparation method of the semiconductive shielding material of the high-voltage direct-current cable is characterized in that 100 parts by weight of polypropylene base material and elastomer base material, 20-30 parts by weight of additional conductive filler and 0.3-0.4 part by weight of antioxidant are subjected to melt blending to prepare the semiconductive shielding material.
9. The method of preparing the semiconducting shield material of claim 8, comprising the steps of:
s1, setting the temperature of the internal mixer, and adding the polypropylene base material, wherein the temperature can melt the polypropylene base material;
s2, adding the elastomer base stock for blending;
s3, slowly adding the conductive filler and blending;
s4, adding an antioxidant, and continuing blending;
and S5, completing blending to obtain the semiconductive shielding material.
10. The method of claim 9, wherein the temperature of the internal mixer is set to be in the range of 180 ℃ to 275 ℃.
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| CN115850856A (en) * | 2022-12-12 | 2023-03-28 | 全球能源互联网欧洲研究院 | Semi-conductive shielding material of medium-high voltage direct current cable and preparation method and application thereof |
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