CN114883419A - Packaging structure for improving high-power working characteristic of detector - Google Patents
Packaging structure for improving high-power working characteristic of detector Download PDFInfo
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- CN114883419A CN114883419A CN202210436340.3A CN202210436340A CN114883419A CN 114883419 A CN114883419 A CN 114883419A CN 202210436340 A CN202210436340 A CN 202210436340A CN 114883419 A CN114883419 A CN 114883419A
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- 238000004806 packaging method and process Methods 0.000 title abstract description 12
- 230000000694 effects Effects 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims description 9
- 241001270131 Agaricus moelleri Species 0.000 claims description 5
- 238000009826 distribution Methods 0.000 abstract description 13
- 238000009827 uniform distribution Methods 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 description 12
- 238000000034 method Methods 0.000 description 5
- 238000004891 communication Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910005926 GexSi1-x Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention provides a packaging structure for improving high-power working characteristics of a detector, which comprises: base, detector chip, tube cap and lens subassembly. According to the invention, the lens assembly with the light homogenizing effect is adopted, so that the energy distribution of light spots irradiated on the detector chip is changed from Gaussian distribution to uniform distribution, the state of overhigh local carrier density is restrained, and the performance of the detector under high power is improved.
Description
Technical Field
The invention belongs to the technical field of optical communication, and particularly relates to a packaging structure for improving the high-power working characteristic of a detector.
Background
The photoelectric detector can convert optical signals into electric signals and is widely applied to the fields of optical communication, laser radar, imaging and the like. The photodetector is used as a core element of an optical communication technology, and has a high requirement on bandwidth, however, when the incident light power is high, a carrier shielding effect is generated, that is, a large number of photo-generated electron holes generated in an absorption region of the photodetector generate a built-in electric field in a direction opposite to an external electric field, so that the drift speed of carriers is reduced, and the bandwidth of the photodetector is greatly reduced.
In order to reduce or eliminate the carrier shielding effect, a person skilled in the art proposes a photodetection component capable of improving the saturation optical power broadband, and the specific implementation manner is that after an optical signal is received by an input end, the optical signal is distributed to n photodetector chips and outputs n paths of optical currents, and a signal synthesis matching unit superposes the n paths of optical currents. In addition, a waveguide photodetector is proposed by those skilled in the art, which divides incident light into four paths through a beam splitter to enter, so as to avoid the carrier shielding effect caused by too concentrated incident light power of the absorption layer. The methods all need to specially design the structure of the photoelectric detector or split incident light, which not only increases the process manufacturing difficulty and the manufacturing cost, but also greatly increases the device volume, resulting in great limitation in practical application.
Disclosure of Invention
In order to solve the technical problem, the invention provides a packaging structure for improving the high-power working characteristic of a detector. The following presents a simplified summary in order to provide a basic understanding of some aspects of the disclosed embodiments. This summary is not an extensive overview and is intended to neither identify key/critical elements nor delineate the scope of such embodiments. Its sole purpose is to present some concepts in a simplified form as a prelude to the more detailed description that is presented later.
The invention adopts the following technical scheme:
in some optional embodiments, there is provided a package structure for improving high power operation characteristics of a detector, including: the detector comprises a detector chip and a lens assembly packaged at the light receiving side of the detector chip, wherein an external light beam is shaped into a flat-top light beam by the lens assembly and then irradiates the photosensitive surface of the detector chip.
Further, the package structure for improving the high-power operating characteristic of the detector further includes: the detector comprises a base and a pipe cap which is arranged on the base and encapsulates the detector chip in the base, wherein the detector chip is attached to the base.
Further, the lens assembly is composed of a first lens and/or a second lens; the first lens is arranged on the tube cap; the second lens is pasted on the photosensitive surface of the detector chip or is pasted on the base through a support or a pipe leg.
Further, the package structure for improving the high power operating characteristic of the detector further includes: an electrical chip disposed on the base; the detector chip is arranged on the electric core plate or arranged on the base in parallel with the electric chip.
Further, the package structure for improving the high-power operating characteristic of the detector further includes: the cushion block is arranged on the base; the detector chip and the electric chip are arranged on the base through the cushion block.
Furthermore, the bonding pads of the detector chip and the electric chip are connected with the pins of the base through routing.
Furthermore, the bonding pad of the detector chip is connected with the electric chip through a routing wire or connected with the electric chip through a flip chip mode.
Furthermore, the routing is one or more of an Au wire, a Pt wire or a Cu wire.
Further, the first lens includes but is not limited to a fresnel lens, a grating lens, a lens group black box; in the case where the second lens alone realizes the dodging effect, the first lens is a convex lens, a concave lens, or a planar lens.
Further, the detector chip is a photodiode chip or an avalanche photodiode chip, and the detector chip is made of a group IV material or a group III-V material.
The invention has the following beneficial effects: according to the invention, the lens assembly with the light homogenizing effect is adopted, so that the energy distribution of light spots irradiated on the detector chip is changed from Gaussian distribution to uniform distribution, the state of overhigh local carrier density is restrained, and the performance of the detector under high power is improved; the invention has simple structure, is beneficial to high-efficiency packaging, reduces the manufacturing difficulty and has larger universality; the method has the advantage of low cost, and can ensure the bandwidth and the performance of the device.
Drawings
FIG. 1 is a schematic diagram of one embodiment of a package structure of the present invention;
FIG. 2 is a schematic diagram of another embodiment of a package structure of the present invention;
FIG. 3 is a schematic diagram of yet another embodiment of a package structure of the present invention;
FIG. 4 is a schematic view of one embodiment of a lens assembly of the present invention;
FIG. 5 is a schematic view of another embodiment of a lens assembly of the present invention;
FIG. 6 is a schematic view of yet another embodiment of a lens assembly of the present invention;
FIG. 7 is a graph of power density as a function of spot radial position with a Gaussian distribution of spot energy;
FIG. 8 is a graph illustrating one of the power density profiles of an external light beam after being homogenized by a lens assembly according to the present invention;
FIG. 9 is another power density distribution plot of an ambient light beam after being dimmed by the lens assembly of the present invention;
FIG. 10 is another power density distribution plot of an ambient light beam after being dimmed by the lens assembly of the present invention;
FIG. 11 is another power density distribution plot of an ambient light beam after being dimmed by the lens assembly of the present invention;
FIG. 12 is a schematic view of a Fresnel lens;
FIG. 13 is a schematic view of one of the grating lenses;
FIG. 14 is a schematic view of another grating lens;
fig. 15 is a schematic view of a specific usage scenario of the present invention.
Detailed Description
The following description and the drawings sufficiently illustrate specific embodiments of the invention to enable those skilled in the art to practice them. Other embodiments may incorporate structural, logical, electrical, process, and other changes. The examples merely typify possible variations. Individual components and functions are optional unless explicitly required, and the sequence of operations may vary. Portions and features of some embodiments may be included in or substituted for those of others.
In some illustrative embodiments, as shown in fig. 1-6, the present invention provides a package structure for improving high power performance of a detector, comprising: a base 101, a detector chip 102, a cap 103, and a lens assembly.
The tube cap 103 is disposed on the base 101 and surrounds the base 101 to form a package cavity, the detector chip 102 is located in the package cavity, that is, the tube cap 103 packages the detector chip 102 inside itself, specifically, the detector chip 102 is attached to the base 101. The lens assembly is packaged at the light receiving side of the detector chip 102, where the light receiving side mentioned herein refers to the side of the photosensitive surface of the detector chip 102 facing the incident light beam, and the structural design of the present invention enables the external light beam to be shaped into a flat-top light beam by the lens assembly and then to irradiate onto the photosensitive surface of the detector chip 102.
As shown in fig. 7, the light spot energy distribution of the external light beam is gaussian distribution, and when the high-power signal light irradiates the photosensitive surface, due to the carrier shielding effect, the photogenerated carriers cannot reach the saturation drift velocity, and the bandwidth and performance of the photodetector are significantly reduced. The lens assembly with the light homogenizing effect is introduced into the packaging structure, so that the light spot energy is changed from Gaussian distribution to non-Gaussian distribution, as shown in figures 8-11, the power density is more uniformly distributed along the radial direction, the light spot central power density is obviously reduced, and the working performance of the detector under high power is further improved.
The invention also includes: an electrical chip 201 and a spacer 202.
The electric chip 201 refers to all chips that can transmit and process electric signals, and may be a transimpedance amplifier, or other types of electric chips and corresponding PCB boards. The electrical chip 201 is disposed on the base 101. The detector chip 102 is disposed on the electrical chip 201, or is disposed on the base 101 in parallel with the electrical chip 201.
The pad 202 is disposed on the base 101, and the detector chip 102 and the electric chip 201 are disposed on the base 101 through the pad 202, wherein the pad 202 is used for adjusting the heights of the detector chip 102 and the electric chip 201. Because the thickness of the detector chip 102 is probably different from that of the electric chip 201, and the height difference caused by the different thicknesses can prolong the length of the wire bonding, thereby affecting the radio frequency performance of the assembly, the cushion block 202 is added during packaging, so that the height of the detector chip 102 and the height of the electric chip 201 can be adjusted to be equal, the wire bonding length is reduced, and the assembly performance is ensured.
The pads of the probe chip 102 and the electrical chip 201 are connected to the pins of the base 101 by bonding wires 203. Wire bonding refers to the use of metal wires and the use of hot pressing or ultrasonic energy to complete the connection of the internal interconnection lines of solid circuits in microelectronic devices, i.e., the connection between the chip and the circuit or lead frame is simple
The pads of probe chip 102 are connected to electrical chip 201 by wire bonds 203 or to electrical chip 201 by flip chip. flip chip is a flip chip or flip chip package, which is a packaging technology that a bump is grown on a chip connection point, and then the chip is turned over to directly connect the bump and a substrate.
The invention adopts a wire bonding or crystal inversion packaging mode, and has the advantage of simple packaging mode.
The routing 203 is one or more of an Au wire, a Pt wire or a Cu wire, and has better conductivity.
The lens assembly is composed of the first lens 104 and/or the second lens 401, that is, the dodging effect is directly performed by the first lens 104, or may be performed by the second lens 401 alone, or both the first lens 104 and the second lens 401 together perform the dodging effect.
The first lens 104 is disposed on the cap 103. The second lens 401 is adhered to the photosensitive surface of the detector chip 102, or adhered to the base 101 through the bracket 105 or the tube leg, or adhered to the pad 202 through the bracket 105 or the tube leg. When the light uniformizing effect is achieved by both the first lens 104 and the second lens 401, the second lens 401 is located between the first lens 104 and the detector chip 102. The packaging structure can be packaged and adjusted according to application requirements and actual conditions through various lens combination modes, so that the packaging structure has high universality, and the various combination modes can ensure a good light-homogenizing effect and avoid or greatly reduce a carrier shielding effect.
The first lens 104 includes, but is not limited to, a fresnel lens, a grating lens, a lens set black box. As shown in fig. 12, a fresnel lens, also known as a screw lens, is mostly a sheet formed by injection molding of a polyolefin material, and is also made of glass, one surface of the lens is a smooth surface, and the other surface of the lens is inscribed with concentric circles from small to large, and the texture of the fresnel lens is designed according to the requirements of light interference and interference, relative sensitivity and receiving angle. As shown in fig. 13-14, the grating lens is made of two or more materials with different refractive indexes, alternatively, it can be made of the same material but with different thicknesses, and the effect is that when light passes through the lens, the optical paths of different regions are different, so that diffraction occurs. The lens group black box is an optical component which is formed by combining a plurality of lenses, sequentially images and finally realizes a dodging effect.
In the case where the dodging effect is achieved by the second lens 401 alone, the first lens 104 may be any optical lens that does not change the energy distribution of the light spot, such as a convex lens, a concave lens, a planar lens, and the like.
The detector chip 102 is a photodiode chip or an avalanche photodiode chip. And the detector chip 102 is made of a group iv material, such as Ge, Si, GexSi1-x, etc., or a group iiiv material, such as GaAs, InGaAs, etc.
As shown in fig. 15, in a specific application, an electrical chip 201, a detector chip 102 and a pad 202 are attached to a base 101 and connected by a wire 203. The first lens 104 on the cap 102 is a diffractive lens that can achieve a flat-top beam conversion effect. In use, the fiber optic adapter 601 is soldered to the outside of the structure. The light to be received is Gaussian distributed when exiting from the optical fiber 602 in the adapter, and is shaped by the first lens 104 into a flat-top beam with power density distributed uniformly along the radial direction. The power density of the center of the light spot is obviously reduced, and the performance of the component under high power is improved.
Those of skill would further appreciate that the various illustrative logical blocks, modules, circuits, and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware, computer software, or combinations of both. To clearly illustrate this interchangeability of hardware and software, various illustrative components, blocks, modules, circuits, and steps have been described above generally in terms of their functionality. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the overall system. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present disclosure.
Claims (10)
1. A package structure for improving high-power operating characteristics of a detector is characterized by comprising: the detector comprises a detector chip and a lens assembly packaged at the light receiving side of the detector chip, wherein an external light beam is shaped into a flat-top light beam by the lens assembly and then irradiates the photosensitive surface of the detector chip.
2. The package structure for improving high power operation characteristics of a detector according to claim 1, further comprising: the detector comprises a base and a pipe cap which is arranged on the base and encapsulates the detector chip in the base, wherein the detector chip is attached to the base.
3. The package structure for improving high power performance characteristics of a detector according to claim 2, wherein the lens assembly is composed of a first lens and/or a second lens;
the first lens is arranged on the tube cap;
the second lens is pasted on the photosensitive surface of the detector chip or is pasted on the base through a support or a pipe leg.
4. The package structure for improving high power operation characteristics of a detector according to claim 3, further comprising: an electrical chip disposed on the base;
the detector chip is arranged on the electric core plate or arranged on the base in parallel with the electric chip.
5. The package structure for improving high power operation characteristics of a detector according to claim 4, further comprising: the cushion block is arranged on the base;
the detector chip and the electric chip are arranged on the base through the cushion block.
6. The package structure for improving the high power performance of the detector as claimed in claim 5, wherein the bonding pads of the detector chip and the electrical chip are connected to the pins of the base by bonding wires.
7. The package structure for improving the high-power operating characteristics of the detector as claimed in claim 6, wherein the bonding pad of the detector chip is connected to the electrical chip by wire bonding or by flip chip.
8. The package structure for improving the high power performance of the detector as claimed in claim 7, wherein the bonding wire is one or more of an Au wire, a Pt wire or a Cu wire.
9. The package structure for improving the high power performance characteristics of the detector according to claim 8, wherein the first lens includes but is not limited to a fresnel lens, a grating lens, a lens group black box; in the case where the second lens alone realizes the dodging effect, the first lens is a convex lens, a concave lens, or a planar lens.
10. The package structure for improving the high power operation characteristic of the detector as claimed in claim 9, wherein the detector chip is a photodiode chip or an avalanche photodiode chip, and the detector chip is made of group iv material or group iiiv material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210436340.3A CN114883419A (en) | 2022-04-25 | 2022-04-25 | Packaging structure for improving high-power working characteristic of detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210436340.3A CN114883419A (en) | 2022-04-25 | 2022-04-25 | Packaging structure for improving high-power working characteristic of detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114883419A true CN114883419A (en) | 2022-08-09 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210436340.3A Pending CN114883419A (en) | 2022-04-25 | 2022-04-25 | Packaging structure for improving high-power working characteristic of detector |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114883419A (en) |
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2022
- 2022-04-25 CN CN202210436340.3A patent/CN114883419A/en active Pending
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