CN114875384A - Semiconductor processing equipment - Google Patents

Semiconductor processing equipment Download PDF

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Publication number
CN114875384A
CN114875384A CN202210444943.8A CN202210444943A CN114875384A CN 114875384 A CN114875384 A CN 114875384A CN 202210444943 A CN202210444943 A CN 202210444943A CN 114875384 A CN114875384 A CN 114875384A
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CN
China
Prior art keywords
module
modules
semiconductor processing
processing apparatus
gas delivery
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Pending
Application number
CN202210444943.8A
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Chinese (zh)
Inventor
王新征
龚炳建
周仁
侯永刚
周芸福
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jiangsu Leadmicro Nano Technology Co Ltd
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Jiangsu Leadmicro Nano Technology Co Ltd
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Publication date
Application filed by Jiangsu Leadmicro Nano Technology Co Ltd filed Critical Jiangsu Leadmicro Nano Technology Co Ltd
Priority to CN202210444943.8A priority Critical patent/CN114875384A/en
Publication of CN114875384A publication Critical patent/CN114875384A/en
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

The invention discloses a semiconductor processing device, comprising: the reaction cavity module comprises a reaction cavity and a reaction cavity frame; the gas transmission module is at least one and is detachably connected with the reaction cavity module; the block terminal module, the block terminal module is at least one, and the block terminal module can be dismantled with gas transmission module and/or reaction chamber module and be connected. It is with a plurality of functional component modularization, can dismantle the connection between each module, dismantles and assembles more in a flexible way for in the use scene of difference, each module can carry out different combinations according to the use needs, and the flexibility is better. Meanwhile, the gas transmission module is independently arranged and can be directly connected with the reaction cavity module, so that the length and the complexity of the process gas transmission pipeline are reduced, and the transmission pipeline is shortened. And each module lug connection, showing the overall height that has reduced equipment, increased and maintained the space, reduced and maintained the degree of difficulty and maintenance cost.

Description

Semiconductor processing equipment
Technical Field
The application relates to the technical field of semiconductor processing, in particular to semiconductor processing equipment.
Background
In the semiconductor processing equipment, a reaction chamber, a process gas transmission device and a distribution box are all integrated on a frame, and due to the limitation of the frame structure, the connection relationship and the layout among all the parts are single, and the parts are difficult to disassemble and maintain; meanwhile, the height of the machine frame is usually high, and the handrail ladder is needed to be used during maintenance, so that the equipment maintenance cost is high.
Disclosure of Invention
The invention provides semiconductor processing equipment, which at least partially solves the technical problems of single layout of main components, difficulty in equipment maintenance and high maintenance cost in the prior art.
In order to solve the technical problems, the invention provides the following technical scheme:
according to a first aspect of the present invention, there is provided a semiconductor processing apparatus comprising:
the reaction cavity module comprises a reaction cavity and a reaction cavity frame;
the number of the gas transmission modules is at least one, and the gas transmission modules are detachably connected with the reaction cavity module;
the block terminal module, the block terminal module is at least one, just the block terminal module with the gas transmission module and/or the connection can be dismantled to the reaction chamber module.
According to the first aspect of the invention, the semiconductor processing equipment provided by the invention modularizes a plurality of functional components, all modules are detachably connected, the disassembly and the assembly are more flexible, the mechanical functions of all module parts can be independently tested, the manufacturing period is saved, so that in different use scenes, all modules can be combined differently according to the use requirements, and the flexibility is better. Meanwhile, the gas transmission module is independently arranged and can be directly connected with the reaction cavity module, so that the length and the complexity of the process gas transmission pipeline are reduced, and the transmission pipeline is shortened. And each module lug connection need not through the frame equipment, is showing the overall height who has reduced equipment, has increased the maintenance space, has reduced and has maintained the degree of difficulty and maintenance cost.
Furthermore, each reaction cavity module is provided with an independent test interface, so that each reaction cavity module is respectively connected with a test device to realize mechanical property test or physical property test.
Furthermore, each gas transmission module is provided with an independent test interface, so that each gas transmission module is respectively linked with test equipment, and the leakage rate test and the valve action test of a transmission system are realized.
Further, the gas delivery module includes:
at least two sub-modules, each sub-module all has independent air supply bottle cabinet, and adjacent sub-module can dismantle the connection, and each sub-module with the reaction chamber mould is respectively can dismantle the connection.
Further, the number of the distribution box modules is at least two, wherein at least one of the distribution box modules is arranged at the top of the gas transmission module, and at least one of the distribution box modules is arranged at the side of the gas transmission module.
Further, the number of the distribution box modules is at least two, wherein at least one of the distribution box modules is arranged at the bottom of the gas transmission module, and at least one of the distribution box modules is arranged at the side part of the gas transmission module.
Further, the process gas delivery module also comprises a heat conducting layer, and the heat conducting layer is arranged on the surface of at least one of the source bottle, the air inlet pipeline and the ALD high-temperature valve of the process gas delivery module. Further, the heating device also comprises a heating belt, wherein the heating belt is coated outside the heat-conducting layer; or the like, or, alternatively,
the heating belt is coated on the surface of at least one of the source bottle, the air inlet pipeline and the ALD high-temperature valve.
Further, the heat conduction layer of the process gas transmission module comprises an aluminum block, and the aluminum block is wrapped with a heating belt.
Furthermore, a plurality of heating rods are inserted into a flange of the semiconductor processing equipment, and the heating rods are uniformly distributed around the air inlet pipeline.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention, as claimed.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention.
FIG. 1 is a schematic block diagram of a semiconductor processing apparatus according to one embodiment of the present invention;
FIG. 2 is an exploded view of the semiconductor processing apparatus of FIG. 1;
FIG. 3 is a layout diagram of the semiconductor processing apparatus of FIG. 1 in some embodiments;
FIG. 4 is a layout diagram of the semiconductor processing apparatus of FIG. 1 in further embodiments;
fig. 5, 6 and 7 are schematic views of a heating structure.
Description of the reference numerals:
100-a reaction cavity module, 101-a reaction cavity and 102-a reaction cavity frame;
200 gas transmission module;
300-a distribution box module;
400-flange, 500-heating rod, 600-insulating layer, 700-heat conducting layer and 800-source bottle; 900-ALD high temperature valve.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
Referring to fig. 1 and 2, in one embodiment, the semiconductor processing apparatus of the present invention includes a chamber module 100, a gas delivery module 200, and a distribution box module 300. The reaction chamber module 100 comprises a reaction chamber body 101 and a reaction chamber frame 102, at least one gas transmission module 200 is provided, and the gas transmission module 200 is detachably connected with the reaction chamber module 100; the number of the distribution box module 300 is at least one, and the distribution box module 300 is detachably connected with the gas transmission module 200 and/or the reaction chamber module 100.
It should be understood that the gas delivery module 200 and the chamber module 100 may be detachably connected by bolts, snaps, etc. In order to ensure the air tightness of the joint, sealing structures such as sealing rubber pads and/or metal seals can be arranged at the relevant joint.
According to the first aspect of the invention, the semiconductor processing equipment provided by the invention modularizes a plurality of functional components, and the modules are detachably connected, so that the disassembly and assembly are more flexible, and the modules can be combined differently according to the use requirements in different use scenes, so that the flexibility is better. Meanwhile, the gas transmission module 200 is independently arranged and can be directly connected with the reaction chamber module 100, so that the length and complexity of a process gas transmission pipeline are reduced, and the transmission pipeline is shortened. And each module lug connection need not through the frame equipment, is showing the overall height who has reduced equipment, has increased the maintenance space, has reduced and has maintained the degree of difficulty and maintenance cost.
Furthermore, each reaction cavity module is provided with an independent test interface, so that each reaction cavity module is respectively connected with a test device to realize mechanical property test or physical property test.
Furthermore, each gas transmission module is provided with an independent test interface, so that each gas transmission module is respectively linked with test equipment, and the leakage rate test and the valve action test of a transmission system are realized.
In the actual use process, in the prior art, since the gas transmission module 200 and the reaction chamber module 100 have a certain assembly distance, a long transmission pipeline needs to be arranged, which results in increased equipment cost. In order to solve this problem, the gas transmission module 200 includes at least two sub-modules, each sub-module has an independent gas source bottle cabinet, adjacent sub-modules are detachably connected, and each sub-module is detachably connected to the reaction chamber group. Set up a plurality of sub-modules according to operating mode needs for all can realize under various structural requirements that reaction chamber module 100 links to each other with gaseous transmission module 200's directness, thereby reduces wiring length.
In one embodiment, as shown in fig. 3, the number of the sub-modules is four, and the number of the distribution box modules is two, wherein one of the distribution box modules is disposed on the top of the gas transmission module, and the other distribution box module is disposed on the side of the gas transmission module. For convenience of description, four sub-modules are named as sub-modules S1, S2, S3 and S4, respectively, and two distribution box modules are named as distribution box modules E1 and E2, respectively, in this embodiment, S1, S2, S3 and S4 are connected to each other to form a square structure, E1 is disposed at the top of the square structure formed by S1, S2, S3 and S4, and E2 is disposed at the side of S2 and S4.
In another embodiment, as shown in fig. 4, there are two sub-modules and two distribution box modules, wherein one distribution box module is disposed at the bottom of the gas transmission module, and the other distribution box module is disposed at the side of the gas transmission module. For convenience of description, the two sub-modules are named sub-modules S1, S2, respectively, and the two electric box modules are named electric box modules E1 and E2, respectively, then in this embodiment, E1 is disposed on top of S1, S2, and E2 is disposed on the side of S2 and E1.
Further, the process gas delivery module further comprises a heat conducting layer, and theoretically, the heat conducting layer 700 may be disposed on a surface of at least one of the source bottle 800, the air inlet pipeline and the ALD high temperature valve 900 of the process gas delivery module, and the heat conducting layer is wrapped by a heating tape. As shown in fig. 5, in this embodiment, the thermally conductive layer 700 is disposed in a plurality of locations including the source bottle 800, the air inlet line, and the ALD high temperature valve 900.
Further, referring to fig. 5 and 6, a plurality of heating rods 500 are inserted into the flange 400 of the process gas delivery module, and each heating rod 500 is uniformly distributed around the intake pipe.
Preferably, as shown in fig. 7, a heat conducting layer of the process gas delivery module can be provided with the heating rod 500, the heat conducting layer is arranged on the surface of at least one of the source bottle, the air inlet pipeline and the ALD high-temperature valve of the process gas delivery module, and the heat conducting layer is coated with an insulating layer 600.
Preferably, the heat conducting layer of the process gas delivery module can be designed as a special cast aluminum heater, the heat conducting layer is arranged on the surface of at least one of the source bottle, the air inlet pipeline and the ALD high-temperature valve of the process gas delivery module, and the heat conducting layer is coated with the heat insulating layer 600.
In the process gas transmission module, the heat conduction layers are arranged on the surfaces of the source bottle, the air inlet pipeline and the ALD high-temperature valve, the heating belt is wrapped outside the heat conduction layers, and the surfaces of the source bottle, the air inlet pipeline, the ALD high-temperature valve and the like can be uniformly heated by utilizing the good heat conduction of the aluminum block.
The air inlet flange is made of stainless steel, so that the heat conductivity is poor, a plurality of heating rods need to be inserted into the air inlet flange, the heating rods can be arranged around the air inlet pipeline, and in practical application, 1 or more heating rods can be selectively started. The heating rod is coated with an aluminum block to increase the uniformity of heat conduction, and the aluminum block is coated with a heat-insulating material.
The heating belt can also be a heating element in other forms, for example, a heating wire can be wound on an aluminum block, the outer layer of the heating wire is wrapped by a heat insulation layer, and the heating belt and the heating wire can also be used simultaneously.
Further, the source bottle, the air inlet pipeline and the ALD high-temperature valve are heated by the heating belt, but the heating belt is poor in fitting performance and uneven in heating, the pipeline is prone to generating cold spots and blocking the pipeline, so that the process operation is affected, and after the aluminum block is used as the heat conducting layer, the heating uniformity can be improved.
Heating elements outside the aluminum block can adopt different modes such as heating belts or heating wires and the like, and can be flexibly applied according to use scenes.
The aluminum block is formed by assembling a plurality of independent components, and the assembly performance is higher.
After the process is stable, the assembled aluminum blocks can be matched with the heater to be integrated into a set of customized cast aluminum heater, so that the repeatability and the stability are improved. The heater can be arranged inside the aluminum block or outside the aluminum block.
It is to be understood that the terminology used herein is for the purpose of describing particular example embodiments only, and is not intended to be limiting. As used herein, the singular forms "a", "an" and "the" may be intended to include the plural forms as well, unless the context clearly indicates otherwise. The terms "comprises," "comprising," "including," and "having" are inclusive and therefore specify the presence of stated features, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, elements, components, and/or groups thereof. The method steps, processes, and operations described herein are not to be construed as necessarily requiring their performance in the particular order described or illustrated, unless specifically identified as an order of performance. It should also be understood that additional or alternative steps may be used.
Although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms may be only used to distinguish one element, component, region, layer or section from another region, layer or section. Terms such as "first," "second," and other numerical terms when used herein do not imply a sequence or order unless clearly indicated by the context. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the example embodiments.
For convenience of description, spatially relative terms, such as "inner", "outer", "lower", "below", "upper", "above", and the like, may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. Such spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" or "over" the other elements or features. Thus, the example term "below … …" can include both an orientation of above and below. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.

Claims (10)

1. A semiconductor processing apparatus, comprising:
the reaction cavity module comprises a reaction cavity and a reaction cavity frame;
the number of the gas transmission modules is at least one, and the gas transmission modules are detachably connected with the reaction cavity module;
the block terminal module, the block terminal module is at least one, just the block terminal module with the gas transmission module and/or the connection can be dismantled to the reaction chamber module.
2. The semiconductor processing apparatus of claim 1, wherein each of the reaction chamber modules is provided with an independent test interface so that each of the reaction chamber modules is connected with a test apparatus to implement a mechanical property test or a physical property test.
3. The semiconductor processing apparatus of claim 1, wherein each of the gas delivery modules is configured with an independent test interface such that each of the gas delivery modules is separately connected to a test apparatus to enable leak rate testing and valve actuation testing of the delivery system.
4. The semiconductor processing apparatus of claim 1, wherein the gas delivery module comprises:
at least two sub-modules, each sub-module all has independent air supply bottle cabinet, and adjacent sub-module can dismantle the connection, and each sub-module with the reaction chamber mould is respectively can dismantle the connection.
5. The semiconductor processing apparatus of claim 4, wherein there are at least two of the switchbox modules, wherein at least one of the switchbox modules is disposed on top of the gas delivery module and at least one of the switchbox modules is disposed on a side of the gas delivery module.
6. The semiconductor processing apparatus of claim 4, wherein there are at least two of the switchbox modules, wherein at least one of the switchbox modules is disposed at a bottom of the gas delivery module and at least one of the switchbox modules is disposed at a side of the gas delivery module.
7. The semiconductor processing apparatus of any one of claims 1-6, wherein the process gas delivery module further comprises a thermally conductive layer disposed on a surface of at least one of a source bottle, an air inlet line, and an ALD high temperature valve of the process gas delivery module.
8. The semiconductor processing apparatus of claim 7, further comprising a heating belt wrapped outside the heat-conducting layer; or the like, or, alternatively,
the heating belt is coated on the surface of at least one of the source bottle, the air inlet pipeline and the ALD high-temperature valve.
9. The semiconductor processing apparatus of claim 7, wherein the thermally conductive layer comprises an aluminum block that is overwrapped with a heating tape.
10. The semiconductor processing apparatus of claim 7, wherein a plurality of heating rods are inserted into the flange of the semiconductor processing apparatus, and wherein the heating rods are uniformly distributed around the gas inlet pipe.
CN202210444943.8A 2022-04-26 2022-04-26 Semiconductor processing equipment Pending CN114875384A (en)

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CN202210444943.8A CN114875384A (en) 2022-04-26 2022-04-26 Semiconductor processing equipment

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Application Number Priority Date Filing Date Title
CN202210444943.8A CN114875384A (en) 2022-04-26 2022-04-26 Semiconductor processing equipment

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CN114875384A true CN114875384A (en) 2022-08-09

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6312525B1 (en) * 1997-07-11 2001-11-06 Applied Materials, Inc. Modular architecture for semiconductor wafer fabrication equipment
US20070160447A1 (en) * 2004-02-26 2007-07-12 Tokyo Electron Limited Semiconductor treating device
US20080072820A1 (en) * 2006-06-30 2008-03-27 Applied Materials, Inc. Modular cvd epi 300mm reactor
CN102644063A (en) * 2012-04-20 2012-08-22 北京七星华创电子股份有限公司 Equipment for realizing atomic layer deposition process
DE102014220512A1 (en) * 2014-10-09 2016-04-14 Sentech Instruments Gmbh Modular supply system for chemical reaction systems, a block device therefor and methods for supplying chemical reaction systems
WO2020171467A1 (en) * 2019-02-19 2020-08-27 고려대학교 산학협력단 Deposition apparatus comprising metal block-coupled heater assembly for supplying precursor source
CN113186515A (en) * 2021-05-19 2021-07-30 江苏微导纳米科技股份有限公司 Process pipeline heating device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6312525B1 (en) * 1997-07-11 2001-11-06 Applied Materials, Inc. Modular architecture for semiconductor wafer fabrication equipment
US20070160447A1 (en) * 2004-02-26 2007-07-12 Tokyo Electron Limited Semiconductor treating device
US20080072820A1 (en) * 2006-06-30 2008-03-27 Applied Materials, Inc. Modular cvd epi 300mm reactor
CN102644063A (en) * 2012-04-20 2012-08-22 北京七星华创电子股份有限公司 Equipment for realizing atomic layer deposition process
DE102014220512A1 (en) * 2014-10-09 2016-04-14 Sentech Instruments Gmbh Modular supply system for chemical reaction systems, a block device therefor and methods for supplying chemical reaction systems
WO2020171467A1 (en) * 2019-02-19 2020-08-27 고려대학교 산학협력단 Deposition apparatus comprising metal block-coupled heater assembly for supplying precursor source
CN113186515A (en) * 2021-05-19 2021-07-30 江苏微导纳米科技股份有限公司 Process pipeline heating device

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