CN114866040A - Amplifying circuit and amplifying device - Google Patents

Amplifying circuit and amplifying device Download PDF

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Publication number
CN114866040A
CN114866040A CN202210437554.2A CN202210437554A CN114866040A CN 114866040 A CN114866040 A CN 114866040A CN 202210437554 A CN202210437554 A CN 202210437554A CN 114866040 A CN114866040 A CN 114866040A
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China
Prior art keywords
sub
signal
amplifier
power amplifier
output port
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CN202210437554.2A
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Chinese (zh)
Inventor
沈延利
杜军红
葛振纲
李成祥
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Nanchang Longqi Information Technology Co ltd
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Nanchang Longqi Information Technology Co ltd
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Priority to CN202210437554.2A priority Critical patent/CN114866040A/en
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00—Reducing energy consumption in communication networks
    • Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)

Abstract

The application provides an amplifying circuit and amplifier, amplify module and 5G including 4G, 4G amplifies the module and includes first input port, first driver amplifier, first power amplifier and first output port, and 4G signal is received to first input port, and first driver amplifier and first power amplifier amplify 4G signal, and first output port output 4G signal after amplifying. The 5G amplification module includes a second input port, a second driver amplifier, a second power amplifier, and a second output port, the second input port receives the 5G signal, the second driver amplifier and the second power amplifier amplify the 5G signal, and the second output port outputs the amplified 5G signal. Thus, when receiving the 4G signal, the 4G amplification module amplifies the 4G signal, and when receiving the 5G signal, the 5G amplification module amplifies the 5G signal, so that arbitrary collocation of each frequency band of 4G and each frequency band of 5G is met, and various ENDC combinations are realized.

Description

Amplifying circuit and amplifying device
Technical Field
The present application relates to the field of integrated circuits, and in particular, to an amplifier circuit and an amplifier device.
Background
The 4G-5G Dual Connectivity (EN-DC) is to use a 4G base station as a main base station to transmit signaling, and use a 5G base station as an extended enhanced data transmission channel to improve a data transmission rate.
At present, a low-frequency module (LB PAMID) and a medium-high frequency module (MHB PAMID) are mainly matched with a 4G multi-mode multi-frequency power amplifier (MMPA), and a Low Noise Amplifier (LNA) is added to amplify received signals, so that the receiving and sending of 5G signals in each frequency band are realized.
However, at present, the 4G signal and the 5G signal are generally transmitted and received separately, and it is difficult to meet arbitrary matching of each frequency band of 4G and each frequency band of 5G, so that it is difficult to meet various requirements of the combination of the endec.
Disclosure of Invention
The application provides an amplifying circuit and an amplifying device, which are used for meeting the arbitrary collocation of each frequency band of 4G and each frequency band of 5G, thereby meeting the requirements of various ENDC combinations.
In a first aspect, the present application provides an amplification circuit comprising: the device comprises a 4G amplification module and a 5G amplification module;
the 4G amplification module comprises a first input port, a first driving amplifier connected with the first input port, a first power amplifier connected with the first driving amplifier and a first output port connected with the first power amplifier;
the 5G amplifying module comprises a second input port, a second driving amplifier connected with the second input port, a second power amplifier connected with the second driving amplifier and a second output port connected with the second power amplifier;
the first input port is configured to receive a 4G signal, the first driver amplifier and the first power amplifier are configured to amplify the 4G signal, and the first output port is configured to output the amplified 4G signal;
the second input port is configured to receive a 5G signal, the second driver amplifier and the second power amplifier are configured to amplify the 5G signal, and the second output port is configured to output the amplified 5G signal.
Optionally, the first input port includes a first sub-input port, a second sub-input port, and a third sub-input port;
the first sub-input port is configured to receive a 4G signal at a first frequency, the second sub-input port is configured to receive a 4G signal at a second frequency, and the third sub-input port is configured to receive a 4G signal at a third frequency;
the first frequency is greater than the second frequency, which is greater than the third frequency.
Optionally, the first driver amplifier includes a first sub driver amplifier, a second sub driver amplifier, and a third sub driver amplifier;
the first sub-driver amplifier is connected with the first sub-input port, the second sub-driver amplifier is connected with the second sub-input port, and the third sub-driver amplifier is connected with the third sub-input port;
the first power amplifier comprises a first sub power amplifier, a second sub power amplifier and a third sub power amplifier;
the first sub power amplifier is connected with the first sub drive amplifier, the second sub power amplifier is connected with the second sub drive amplifier, and the third sub power amplifier is connected with the third sub drive amplifier;
the first sub-driver amplifier and the first sub-power amplifier are used for amplifying 4G signals of a first frequency, the second sub-driver amplifier and the second sub-power amplifier are used for amplifying 4G signals of a second frequency, and the third sub-driver amplifier and the third sub-power amplifier are used for amplifying 4G signals of a third frequency.
Optionally, the first output port includes a first sub-output port, a second sub-output port, and a third sub-output port;
the first sub-output port is connected with the first sub-power amplifier, the second sub-output port is connected with the second sub-power amplifier, and the third sub-output port is connected with the third sub-power amplifier;
the first sub-output port outputs an amplified 4G signal with a first frequency, the second sub-output port outputs an amplified 4G signal with a second frequency, and the third sub-output port outputs an amplified 4G signal with a third frequency.
Optionally, the number of the first sub-output port, the second sub-output port, and the third sub-output port is multiple;
a first sub-switch is connected between the first sub-power amplifier and the first sub-output port, a second sub-switch is connected between the second sub-power amplifier and the second sub-output port, and a third sub-switch is connected between the third sub-power amplifier and the third sub-output port;
the first sub-switch is used for controlling the first sub-power amplifier to be connected with a corresponding first sub-output port, the second sub-switch is used for controlling the second sub-power amplifier to be connected with a corresponding second sub-output port, and the third sub-switch is used for controlling the third sub-power amplifier to be connected with a corresponding third sub-output port.
Optionally, the first sub-driver amplifier, the second sub-driver amplifier, and the third sub-driver amplifier are connected to a first power supply, and the first power amplifier, the second sub-power amplifier, and the third sub-power amplifier are connected to a second power supply.
Optionally, the second input port includes a fourth sub-input port, a fifth sub-input port, and a sixth sub-input port;
the fourth sub-input port is configured to receive a 5G signal at a first frequency, the fifth sub-input port is configured to receive a 5G signal at a second frequency, and the sixth sub-input port is configured to receive a 5G signal at a third frequency;
the first frequency is greater than the second frequency, which is greater than the third frequency.
Optionally, the second driver amplifier includes a fourth sub driver amplifier, a fifth sub driver amplifier, and a sixth sub driver amplifier;
the fourth sub-driver amplifier is connected to the fourth sub-input port, the fifth sub-driver amplifier is connected to the fifth sub-input port, and the sixth sub-driver amplifier is connected to the sixth sub-input port;
the second power amplifier comprises a fourth sub power amplifier, a fifth sub power amplifier and a sixth sub power amplifier;
the fourth sub power amplifier is connected with the fourth sub drive amplifier, the fifth sub power amplifier is connected with the fifth sub drive amplifier, and the sixth sub power amplifier is connected with the sixth sub drive amplifier;
the fourth sub-driver amplifier and the fourth sub-power amplifier are configured to amplify a 5G signal at a first frequency, the fifth sub-driver amplifier and the fifth sub-power amplifier are configured to amplify a 5G signal at a second frequency, and the sixth sub-driver amplifier and the sixth sub-power amplifier are configured to amplify a 5G signal at a third frequency.
Optionally, the second output port includes a fourth sub-output port, a fifth sub-output port, and a sixth sub-output port;
the fourth sub-output port is connected to the fourth sub-power amplifier, the fifth sub-output port is connected to the fifth sub-power amplifier, and the sixth sub-output port is connected to the sixth sub-power amplifier;
the fourth sub-output port outputs the amplified 5G signal of the first frequency, the fifth sub-output port outputs the amplified 5G signal of the second frequency, and the sixth sub-output port outputs the amplified 5G signal of the third frequency.
Optionally, the number of the fourth sub-output ports, the number of the fifth sub-output ports, and the number of the sixth sub-output ports are all plural;
a fourth sub-switch is connected between the fourth sub-power amplifier and the fourth sub-output port, a fifth sub-switch is connected between the fifth sub-power amplifier and the fifth sub-output port, and a sixth sub-switch is connected between the sixth sub-power amplifier and the sixth sub-output port;
the fourth sub-switch is configured to control the fourth sub-power amplifier to be connected to a corresponding fourth sub-output port, the fifth sub-switch is configured to control the fifth sub-power amplifier to be connected to a corresponding fifth sub-output port, and the sixth sub-switch is configured to control the sixth sub-power amplifier to be connected to a corresponding sixth sub-output port.
Optionally, the fourth sub-driver amplifier, the fifth sub-driver amplifier, and the sixth sub-driver amplifier are connected to a third power supply, and the fourth power amplifier, the fifth sub-power amplifier, and the sixth sub-power amplifier are connected to a fourth power supply.
In a second aspect, the present application provides an amplifying device comprising: the amplifier circuit according to any one of the first aspect and the first aspect, a radio frequency transceiver and an antenna connected to the amplifier circuit;
the radio frequency transceiver is used for transmitting 4G signals or 5G signals, the amplifying circuit is used for amplifying the 4G signals or 5G signals, and the antenna is used for transmitting the amplified 4G signals or 5G signals.
Optionally, the antenna includes a first antenna and a second antenna;
the amplifying device further includes: a control switch connected to the first antenna and the second antenna, and a first duplex filter and a second duplex filter connected to the control switch;
the first diplex filter is configured to filter the 4G signal amplified by the amplifying circuit, the control switch is configured to control the first diplex filter to send the filtered 4G signal to a first antenna, and the first antenna is configured to transmit the filtered 4G signal;
the second duplex filter is configured to filter the 5G signal amplified by the amplifying circuit, the control switch is configured to control the second duplex filter to send the filtered 5G signal to a second antenna, and the second antenna is configured to transmit the filtered 5G signal.
Optionally, the method further includes:
a first low noise amplifier connected to the first duplex filter, and a second low noise amplifier connected to the second duplex filter;
the first antenna is further used for receiving 4G signals, the first duplex filter is used for filtering the 4G signals received by the first antenna, the first low noise amplifier is used for amplifying the 4G signals received by the first antenna and sending the signals to the radio frequency transceiver, and the radio frequency transceiver processes the amplified 4G signals received by the first antenna;
the second antenna is further configured to receive a 5G signal, the second duplex filter is configured to filter the 5G signal received by the second antenna, the second low noise amplifier is configured to amplify the 5G signal received by the second antenna and send the amplified 5G signal to the radio frequency transceiver, and the radio frequency transceiver processes the amplified 5G signal received by the second antenna.
The amplifying circuit provided by the application comprises a 4G amplifying module and a 5G amplifying module, wherein the 4G amplifying module comprises a first input port, a first driving amplifier connected with the first input port, a first power amplifier connected with the first driving amplifier and a first output port connected with the first power amplifier, the first input port is used for receiving a 4G signal, the first driving amplifier and the first power amplifier are used for amplifying the 4G signal, and the first output port is used for outputting the amplified 4G signal. The 5G amplification module includes a second input port, a second driver amplifier connected to the second input port, a second power amplifier connected to the second driver amplifier, and a second output port connected to the second power amplifier, the second input port is configured to receive a 5G signal, the second driver amplifier and the second power amplifier are configured to amplify the 5G signal, and the second output port is configured to output the amplified 5G signal. Therefore, when the 4G signal is received, the 4G signal is amplified by the 4G amplification module, and when the 5G signal is received, the 5G signal is amplified by the 5G amplification module, so that any collocation of the 4G frequency bands and the 5G frequency bands is met, and various ENDC combination requirements are met.
Drawings
In order to more clearly illustrate the technical solutions in the present application or the prior art, the drawings needed for the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a circuit diagram of an amplifying circuit according to an embodiment of the present disclosure;
fig. 2 is a circuit diagram of an amplifying circuit according to an embodiment of the present disclosure;
fig. 3 is a schematic structural diagram of an amplifying device according to an embodiment of the present application.
Detailed Description
To make the purpose, technical solutions and advantages of the present application clearer, the technical solutions in the present application will be clearly and completely described below with reference to the drawings in the present application, and it is obvious that the described embodiments are some, but not all embodiments of the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
At present, 4G signals and 5G signals are generally transmitted and received independently, and any collocation of 4G frequency bands and 5G frequency bands is difficult to meet, so that various ENDC combination requirements are difficult to meet.
In view of the above problems, the present application provides an amplifying circuit, which includes a 4G amplifying module and a 5G amplifying module, where the 4G amplifying module includes a first input port, a first driving amplifier, a first power amplifier and a first output port, the first input port receives a 4G signal, the first driving amplifier performs a first-step amplification on the 4G signal received by the first input port, the first power amplifier performs a second-step amplification on the 4G signal amplified by the first driving amplifier, and the first output port outputs the 4G signal amplified by the first power amplifier. The 5G amplification module comprises a second input port, a second drive amplifier, a second power amplifier and a second output port, the second input port receives a 5G signal, the second drive amplifier performs first-step amplification on the 5G signal received by the second input port, the second power amplifier performs second-step amplification on the 5G signal amplified by the second drive amplifier, and the second output port outputs the 5G signal amplified by the second power amplifier. Therefore, when the 4G signal is received, the 4G signal is amplified by the 4G amplification module, and when the 5G signal is received, the 5G signal is amplified by the 5G amplification module, so that any collocation of the 4G frequency bands and the 5G frequency bands is met, and various ENDC combination requirements are met.
The technical solution of the present application will be described in detail below with specific examples. The following several specific embodiments may be combined with each other, and details of the same or similar concepts or processes may not be repeated in some embodiments.
Fig. 1 shows a circuit configuration diagram of an amplifying circuit according to an embodiment of the present application. The amplifying circuit of the present embodiment includes: a 4G amplification module 100 and a 5G amplification module 200;
the 4G amplification module 100 includes a first input port 4G-RFIN, a first drive amplifier D1 connected to the first input port 4G-RFIN, a first power amplifier P1 connected to the first drive amplifier D1, and a first output port 4G-B connected to the first power amplifier P1;
the 5G amplification module 200 includes a second input port 5G-RFIN, a second drive amplifier D2 connected to the second input port 5G-RFIN, a second power amplifier P2 connected to the second drive amplifier D2, and a second output port 5G-B connected to the second power amplifier P2;
the first input port 4G-RFIN is used for receiving 4G signals, the first driving amplifier D1 and the first power amplifier P1 are used for amplifying the 4G signals, and the first output port 4G-B is used for outputting the amplified 4G signals;
the second input port 5G-RFIN is for receiving 5G signals, the second driver amplifier D2 and the second power amplifier P2 are for amplifying 5G signals, and the second output port 5G-B is for outputting amplified 5G signals.
In some embodiments, the first input port 4G-RFIN includes a first sub-input port 4G-RFIN-H1, a second sub-input port 4G-RFIN-M1, and a third sub-input port 4G-RFIN-L1, the first sub-input port 4G-RFIN-H1 receives 4G signals at a first frequency, the second sub-input port 4G-RFIN-M1 receives 4G signals at a second frequency, the third sub-input port 4G-RFIN-L1 receives 4G signals at a third frequency, the first frequency is greater than the second frequency, the second frequency is greater than the third frequency, e.g., the first frequency may be 3MH ~30MHz, the second frequency may be 300KHz ~3MHz, the third frequency is 3KHz ~300KHz, then the first sub-input port 4G-RFIN-H1 is configured to receive 4G high frequency signals, the second sub-input port 4G-RFIN-M1 is configured to receive 4G intermediate frequency signals, the third sub-input port 4G-RFIN-L1 is for receiving 4G low frequency signals.
The first driver amplifier D1 includes a first sub-driver amplifier D11, a second sub-driver amplifier D12, and a third sub-driver amplifier D13. The first sub-driver amplifier D11 is connected to the first sub-input port 4G-RFIN-H1 for amplifying the 4G high frequency signals received at the first sub-input port 4G-RFIN-H1. The second sub-driver amplifier D12 is coupled to the second sub-input port 4G-RFIN-M1 for amplifying the 4G intermediate frequency signals received at the second sub-input port 4G-RFIN-M1. The third sub-driver amplifier D13 is connected to the third sub-input port 4G-RFIN-L1 for amplifying the 4G low frequency signals received at the third sub-input port 4G-RFIN-L1.
The first power amplifier P1 includes a first sub power amplifier P11, a second sub power amplifier P12, and a third sub power amplifier P13. The first sub-power amplifier P11 is connected to the first sub-driver amplifier D11 and is configured to amplify the 4G high-frequency signal amplified by the first sub-driver amplifier D11, that is, the first sub-power amplifier P11 and the first sub-driver amplifier D11 together amplify the 4G high-frequency signal, that is, the first sub-power amplifier P11 and the first sub-driver amplifier D11 together amplify the 4G signal at the first frequency, so that the 4G high-frequency signal obtains sufficient radio-frequency power. The second sub-power amplifier P12 is connected to the second sub-driver amplifier D12 and is configured to amplify the 4G intermediate frequency signal amplified by the second sub-driver amplifier D12, that is, the second sub-power amplifier P12 and the second sub-driver amplifier D12 jointly amplify the 4G intermediate frequency signal, that is, the second sub-power amplifier P12 and the second sub-driver amplifier D12 jointly amplify the 4G signal at the second frequency, so that the 4G intermediate frequency signal obtains sufficient radio frequency power. The third sub power amplifier P13 is connected to the third sub driver amplifier D13 and is configured to amplify the 4G low frequency signal amplified by the third sub driver amplifier D13, that is, the third sub power amplifier P13 and the third sub driver amplifier D13 together amplify the 4G low frequency signal, that is, the third sub power amplifier P13 and the third sub driver amplifier D13 together amplify the 4G signal at the third frequency, so that the 4G low frequency signal obtains sufficient radio frequency power.
The first output port 4G-B comprises a first sub-output port 4G-HB, a second sub-output port 4G-MB and a third sub-output port 4G-LB, the first sub-output port 4G-HB is connected with a first sub-power amplifier P11 and is used for outputting a 4G signal of a first frequency amplified by the first sub-power amplifier P11, namely the first sub-output port 4G-HB is used for outputting a 4G high-frequency signal amplified by the first sub-drive amplifier D11 and the first sub-power amplifier P11. The second sub-output port 4G-MB is connected to the second sub-power amplifier P12 and is configured to output the 4G signal of the second frequency amplified by the second sub-power amplifier P12, that is, the second sub-output port 4G-MB is configured to output the 4G intermediate frequency signal amplified by the second sub-driver amplifier D12 and the second sub-power amplifier P12. The third sub-output port 4G-LB is connected to the third sub-power amplifier P13 and configured to output a 4G signal of the third frequency amplified by the third sub-power amplifier P13, that is, the third sub-output port 4G-LB is configured to output a 4G low-frequency signal amplified by the third sub-driver amplifier D13 and the third sub-power amplifier P13.
In some embodiments, the number of the first sub-output ports 4G-HB, the second sub-output ports 4G-MB and the third sub-output ports 4G-LB are all multiple, a first sub-switch 111 is connected between the first sub-power amplifier P11 and the first sub-output ports 4G-HB, a second sub-switch 112 is connected between the second sub-power amplifier P12 and the second sub-output ports 4G-MB, and a third sub-switch 113 is connected between the third sub-power amplifier P13 and the third sub-output ports 4G-LB.
The first sub-switch 111 controls the first sub-power amplifier P11 to be connected with the corresponding first sub-output port 4G-HB, and referring to FIG. 2, the first sub-switch 111 comprises two single-pole two-throw Switches (SPDT), and the first sub-output port 4G-HB comprises 4G-HB1, 4G-HB2, 4G-HBRX1 and 4G-HBRX 2. One end of one single-pole two-throw switch is connected with the first sub power amplifier P11, and the other end of the one single-pole two-throw switch is connected with 4G-HB1 or 4G-HBRX 1. And one end of the other single-pole two-throw switch is connected with the first sub power amplifier P11, and the other end of the other single-pole two-throw switch is connected with 4G-HB2 or 4G-HBRX 2.
The second sub-switch 112 controls the second sub-power amplifier P12 to connect to the corresponding second sub-output port 4G-MB, and as shown in fig. 2, the second sub-switch 112 includes a single-pole-three-throw switch, and the second sub-output port 4G-MB includes 4G-MB1, 4G-MB2, and 4G-MB 3. One end of the single-pole three-throw switch is connected with the second sub power amplifier P12, and the other end of the single-pole three-throw switch is connected with 4G-MB1, 4G-MB2 or 4G-MB 3.
The third sub-switch 113 controls the third sub-power amplifier P13 to connect with the corresponding third sub-output port 4G-LB, and as shown in fig. 2, the third sub-switch 113 includes a single-pole two-throw switch, and the third sub-output port 4G-LB includes 4G-LB1 and 4G-LB 2. One end of the single-pole two-throw switch is connected with the third sub power amplifier P13, and the other end of the single-pole two-throw switch is connected with 4G-LB1 or 4G-LB 2.
In some embodiments, the first sub-driver amplifier D11, the second sub-driver amplifier D12, and the third sub-driver amplifier D13 are connected to a first power source VCC1, and the first sub-power amplifier P11, the second sub-power amplifier P12, and the third sub-power amplifier P13 are connected to a second power source VCC2, and the first power source VCC1 and the second power source VCC2 may be different power sources and have different voltages.
A first matching circuit 121 is connected between the first sub-driver amplifier D11 and the first sub-power amplifier P11, and the first matching circuit 121 is configured to impedance match the first sub-driver amplifier D11 and the first sub-power amplifier P11. A second matching circuit 122 is connected between the second sub-driver amplifier D12 and the second sub-power amplifier P12, and the second matching circuit 122 is configured to impedance match the second sub-driver amplifier D12 and the second sub-power amplifier P12. A third matching circuit 123 is connected between the third sub-driver amplifier D13 and the third sub-power amplifier P13, and the third matching circuit 123 is configured to impedance match the third sub-driver amplifier D13 and the third sub-power amplifier P13.
In some embodiments, the second input port 5G-RFIN includes a fourth sub-input port 5G-RFIN-H2, a fifth sub-input port 5G-RFIN-M2, and a sixth sub-input port 5G-RFIN-L2, the fourth sub-input port 5G-RFIN-H2 receives a 5G signal at a first frequency, the fifth sub-input port 5G-RFIN-M2 receives a 5G signal at a second frequency, the sixth sub-input port 5G-RFIN-L2 receives a 5G signal at a third frequency, the first frequency is greater than the second frequency, the second frequency is greater than the third frequency, that is, the fourth sub-input port 5G-RFIN-H2 is for receiving 5G high frequency signals, the fifth sub-input port 5G-RFIN-M2 is for receiving 5G intermediate frequency signals, and the sixth sub-input port 5G-RFIN-L2 is for receiving 5G low frequency signals.
The second driver amplifier D2 includes a fourth sub-driver amplifier D21, a fifth sub-driver amplifier D22, and a sixth sub-driver amplifier D23. The fourth sub-driver amplifier D21 is connected to the fourth sub-input port 5G-RFIN-H2 for amplifying the 5G high frequency signals received at the fourth sub-input port 5G-RFIN-H2. The fifth sub-driver amplifier D22 is connected to the fifth sub-input port 5G-RFIN-M2 for amplifying the 5G intermediate frequency signal received at the fifth sub-input port 5G-RFIN-M2. The sixth sub-driver amplifier D23 is connected to the sixth sub-input port 5G-RFIN-L2 for amplifying the 5G low frequency signals received at the sixth sub-input port 5G-RFIN-L2.
The second power amplifier P2 includes a fourth sub power amplifier P21, a fifth sub power amplifier P22, and a sixth sub power amplifier P23. The fourth sub power amplifier P21 is connected to the fourth sub driver amplifier D21 and is configured to amplify the 5G high frequency signal amplified by the fourth sub driver amplifier D21, that is, the fourth sub power amplifier P21 and the fourth sub driver amplifier D21 together amplify the 5G high frequency signal, that is, the fourth sub power amplifier P21 and the fourth sub driver amplifier D21 together amplify the 5G signal at the first frequency, so that the 5G high frequency signal obtains sufficient radio frequency power. The fifth sub power amplifier P22 is connected to the fifth sub driver amplifier D22 and is configured to amplify the 5G intermediate frequency signal amplified by the fifth sub driver amplifier D22, that is, the fifth sub power amplifier P22 and the fifth sub driver amplifier D22 jointly amplify the 5G intermediate frequency signal, that is, the fifth sub power amplifier P22 and the fifth sub driver amplifier D22 jointly amplify the 5G signal at the second frequency, so that the 5G intermediate frequency signal obtains sufficient radio frequency power. The sixth sub power amplifier P23 is connected to the sixth sub driver amplifier D23 and configured to amplify the 5G low frequency signal amplified by the sixth sub driver amplifier D23, that is, the sixth sub power amplifier P23 and the sixth sub driver amplifier D23 jointly amplify the 5G low frequency signal, that is, the sixth sub power amplifier P23 and the sixth sub driver amplifier D23 jointly amplify the 5G signal at the third frequency, so that the 5G low frequency signal obtains sufficient radio frequency power.
The second output port 5G-B comprises a fourth sub-output port 5G-HB, a fifth sub-output port 5G-MB and a sixth sub-output port 5G-LB, the fourth sub-output port 5G-HB is connected with a fourth sub-power amplifier P21 and is used for outputting a 5G signal of the first frequency amplified by the fourth sub-power amplifier P21, namely the fourth sub-output port 5G-HB is used for outputting a 5G high-frequency signal amplified by a fourth sub-drive amplifier D21 and a fourth sub-power amplifier P21. The fifth sub-output port 5G-MB is connected to the fifth sub-power amplifier P22 and is configured to output the 5G signal of the second frequency amplified by the fifth sub-power amplifier P22, that is, the fifth sub-output port 5G-MB is configured to output the 5G intermediate frequency signal amplified by the fifth sub-driver amplifier D22 and the fifth sub-power amplifier P22. The sixth sub-output port 5G-LB is connected to the sixth sub-power amplifier P23 and configured to output the 5G signal of the third frequency amplified by the sixth sub-power amplifier P23, that is, the sixth sub-output port 5G-LB is configured to output the 5G low-frequency signal amplified by the sixth sub-driver amplifier D23 and the sixth sub-power amplifier P23.
In some embodiments, the number of the fourth sub-output ports 5G-HB, the number of the fifth sub-output ports 5G-MB and the number of the sixth sub-output ports 5G-LB are all plural, the fourth sub-switch 211 is connected between the fourth sub-power amplifier P21 and the fourth sub-output ports 5G-HB, the fifth sub-switch 212 is connected between the fifth sub-power amplifier P22 and the fifth sub-output ports 5G-MB, and the sixth sub-switch 213 is connected between the sixth sub-power amplifier P23 and the sixth sub-output ports 5G-LB.
The fourth sub-switch 211 controls the fourth sub-power amplifier P21 to connect with the corresponding fourth sub-output port 5G-HB, and as shown in FIG. 2, the fourth sub-switch 211 comprises two single-pole two-throw Switches (SPDT), and the fourth sub-output port 5G-HB comprises 5G-HB3, 5G-HB4, 5G-HBRX3 and 5G-HBRX 4. One end of one single-pole two-throw switch is connected with the fourth sub power amplifier P21, and the other end of the one single-pole two-throw switch is connected with 5G-HB3 or 5G-HBRX 3. And one end of the other single-pole two-throw switch is connected with the fourth sub power amplifier P21, and the other end of the other single-pole two-throw switch is connected with 5G-HB4 or 5G-HBRX 4.
The fifth sub-switch 212 controls the fifth sub-power amplifier P22 to connect to the corresponding fifth sub-output port 5G-MB, and as shown in fig. 2, the fifth sub-switch 212 includes a single-pole four-throw switch, and the second sub-output port 5G-MB includes 5G-MB1, 5G-MB2, 5G-MB3 and 5G-MB 4. One end of the single-pole four-throw switch is connected with the fifth sub-power amplifier P22, and the other end of the single-pole four-throw switch is connected with 5G-MB1, 5G-MB2, 5G-MB3 or 5G-MB 4.
The sixth sub-switch 213 controls the sixth sub-power amplifier P23 to connect with the corresponding sixth sub-output port 5G-LB, and as shown in fig. 2, the sixth sub-switch 213 includes a single-pole two-throw switch, and the sixth sub-output port 5G-LB includes 5G-LB1 and 5G-LB 2. One end of the single-pole two-throw switch is connected with the sixth sub power amplifier P23, and the other end of the single-pole two-throw switch is connected with 5G-LB1 or 5G-LB 2.
In some embodiments, the fourth sub-driver amplifier D21, the fifth sub-driver amplifier D22, and the sixth sub-driver amplifier D23 are connected to a third power supply VCC3, the fourth sub-power amplifier P21, the fifth sub-power amplifier P22, and the sixth sub-power amplifier P23 are connected to a fourth power supply VCC4, and the third power supply VCC3 and the fourth power supply VCC4 may be different power supplies and have different voltages.
A fourth matching circuit 221 is connected between the fourth sub-driver amplifier D21 and the fourth sub-power amplifier P21, and the fourth matching circuit 221 is configured to impedance match the fourth sub-driver amplifier D21 and the fourth sub-power amplifier P21. A fifth matching circuit 222 is connected between the fifth sub-driver amplifier D22 and the fifth sub-power amplifier P22, and the fifth matching circuit 222 is used for impedance matching between the fifth sub-driver amplifier D22 and the fifth sub-power amplifier P22. A sixth matching circuit 223 is connected between the sixth sub-driver amplifier D23 and the sixth sub-power amplifier P23, and the sixth matching circuit 223 is configured to impedance-match the sixth sub-driver amplifier D23 and the sixth sub-power amplifier P23.
The amplifying circuit provided by the application is described in detail above, when receiving a 4G signal, the 4G amplifying module is used to amplify the 4G signal, and when receiving a 5G signal, the 5G amplifying module is used to amplify the 5G signal, so that any collocation of each frequency band of 4G and each frequency band of 5G is met, and thus various requirements of the endec combination are met.
Fig. 3 shows a schematic structural diagram of an amplifying device according to an embodiment of the present application. The amplifying device of the present embodiment includes: the amplifying circuit 10, the radio frequency transceiver 20 and the antenna 30 connected to the amplifying circuit 10;
the radio frequency transceiver 20 is used for transmitting 4G signals or 5G signals, the amplifying circuit 10 is used for amplifying the 4G signals or 5G signals, and the antenna 30 is used for transmitting the amplified 4G signals or 5G signals.
The rf transceiver 20 transmits a 4G signal or a 5G signal, for example, the rf transceiver 20 transmits a 4G signal, the first input port 4G-RFIN of the amplifying circuit 10 receives the 4G signal, the first driver amplifier D1 and the first power amplifier P1 of the amplifying circuit 10 amplify the 4G signal and output the amplified 4G signal to the antenna 30 through the first output port 4G-B, and the antenna 30 receives the amplified 4G signal and transmits the amplified 4G signal. For example, the rf transceiver 20 transmits a 5G signal, the second input port 5G-RFIN of the amplifying circuit 10 receives the 5G signal, the second driver amplifier D2 and the second power amplifier P2 of the amplifying circuit 10 amplify the 5G signal and output the amplified 5G signal to the antenna 30 through the second output port 5G-B, and the antenna 30 receives the amplified 5G signal and transmits the amplified 5G signal.
In some embodiments, the antenna 30 comprises a first antenna 301 and a second antenna 302, the amplifying device further comprises a control switch 60 connected to the first antenna 301 and the second antenna 302, and a first diplex filter 401 and a second diplex filter 402 connected to the control switch 60. The first duplex filter 401 is configured to filter the 4G signal amplified by the amplifying circuit 10, and the control switch 60 is configured to control the first duplex filter 401 to send the filtered 4G signal to the first antenna 301, so that the first antenna 301 transmits the filtered 4G signal. The second duplex filter 402 is configured to filter the 5G signal amplified by the amplifying circuit 10, and the control switch 60 is configured to control the second duplex filter 402 to send the filtered 5G signal to the second antenna 302, so that the second antenna 302 sends the filtered 5G signal.
The amplifying device further comprises a first low noise amplifier 501 connected to the first duplex filter 401, and a second low noise amplifier 502 connected to the second duplex filter 402. The first antenna 301 is further configured to receive a 4G signal, the first diplex filter 401 can also filter the 4G signal received by the first antenna 301, and send the filtered 4G signal received by the first antenna 301 to the first low noise amplifier 501, the first low noise amplifier 501 amplifies the 4G signal received by the first antenna 301 and sends the amplified 4G signal to the radio frequency transceiver 20, and the radio frequency transceiver 20 performs internal signal demodulation processing on the 4G signal received by the first antenna 301. The second antenna 302 is further configured to receive a 5G signal, the second duplex filter 402 is further configured to filter the 5G signal received by the second antenna 302, and send the filtered 5G signal received by the second antenna 302 to the second low noise amplifier 502, the second low noise amplifier 502 amplifies the 5G signal received by the second antenna 302 and sends the amplified 5G signal to the radio frequency transceiver 20, and the radio frequency transceiver 20 performs internal signal demodulation processing on the 5G signal received by the second antenna 302.
The amplifying device provided by the application can realize ENDC combination of 4G frequency bands and 5G frequency bands. For example, an endec combination of DC-7A-N40A (high frequency + high frequency) is implemented, a 4G B7 high frequency Transmission (TX) signal is transmitted through TX1 of radio frequency transceiver 20, signal amplification is performed through amplification circuit 10, the signal amplified by amplification circuit 10 is filtered through first duplex filter 401, and is switched to first antenna 301 through control switch 60, and first antenna 301 transmits a 4G high frequency signal, thereby implementing transmission of a 4G high frequency signal.
The high frequency B7 Reception (RX) signal of 4G is received by the first antenna 301, and is switched to the first duplexer filter 401 through the control switch 60, the first duplexer filter 401 filters the high frequency 4G signal received by the first antenna 301, and the high frequency 4G signal received by the first antenna 301 is amplified through the first low noise amplifier 501, and then enters the RX1 port of the rf transceiver 20 to perform internal signal demodulation processing.
The N40 high frequency transmission signal of 5G is transmitted through TX4 of radio frequency transceiver 20, signal amplification processing is performed through amplification circuit 10, the signal is transmitted through second duplex filter 402 after being amplified by amplification circuit 10, and is switched to second antenna 302 through control switch 60, and second antenna 302 transmits the high frequency signal of 5G, thereby realizing transmission of the high frequency signal of 5G.
The N40 high frequency receive signal of 5G is received by the second antenna 302, and is switched to the second duplex filter 402 through the control switch 60, the second duplex filter 402 filters the 5G high frequency signal received by the second antenna 302, and the 5G high frequency signal received by the second antenna 302 is amplified through the second low noise amplifier 502, and then enters the RX4 port of the rf transceiver 20 to perform internal signal demodulation processing, thereby implementing the transmit-receive signal processing of the B7+ N40 (high frequency + high frequency) endec combination.
For example, the endec combination of DC-3A-N41A (intermediate frequency + high frequency) is realized, a B3 intermediate frequency transmission signal of 4G is transmitted through TX2 of the radio frequency transceiver 20, signal amplification processing is performed through the amplification circuit 10, the signal is transmitted through the first duplex filter 401 after being amplified by the amplification circuit 10, and is switched to the first antenna 301 through the control switch 60, and the first antenna 301 transmits the intermediate frequency signal of 4G, so that transmission of the intermediate frequency signal of 4G is realized.
The 4G B3 intermediate frequency received signal is received by the first antenna 301, and is switched to the first duplexer filter 401 through the control switch 60, the first duplexer filter 401 filters the 4G intermediate frequency signal received by the first antenna 301, and the 4G intermediate frequency signal received by the first antenna 301 is amplified through the first low noise amplifier 501, and then enters the RX2 port of the rf transceiver 20 to perform internal signal demodulation processing.
The N41 high frequency transmission signal of 5G is transmitted through TX4 of radio frequency transceiver 20, signal amplification processing is performed through amplification circuit 10, the signal is transmitted through second duplex filter 402 after being amplified by amplification circuit 10, and is switched to second antenna 302 through control switch 60, and second antenna 302 transmits the high frequency signal of 5G, thereby realizing transmission of the high frequency signal of 5G.
The N41 high frequency receive signal of 5G is received by the second antenna 302, and is switched to the second duplex filter 402 through the control switch 60, the second duplex filter 402 filters the 5G high frequency signal received by the second antenna 302, and the 5G high frequency signal received by the second antenna 302 is amplified through the second low noise amplifier 502, and then enters the RX4 port of the rf transceiver 20 to perform internal signal demodulation processing, thereby implementing the transmit-receive signal processing of the B3+ N41 endec (intermediate frequency + high frequency) endec combination.
For example, the endec combination of DC-20A-N1A (low frequency + intermediate frequency) is realized, a 4G B20 low frequency transmission signal is transmitted through TX3 of the radio frequency transceiver 20, is subjected to signal amplification processing by the amplification circuit 10, is transmitted through the first duplex filter 401 after being amplified by the amplification circuit 10, is switched to the first antenna 301 through the control switch 60, and transmits the 4G low frequency signal by the first antenna 301, so that the transmission of the 4G low frequency signal is realized.
The 4G B20 low frequency received signal is received by the first antenna 301, and is switched to the first duplexer filter 401 through the control switch 60, the first duplexer filter 401 filters the 4G low frequency signal received by the first antenna 301, and the 4G low frequency signal received by the first antenna 301 is amplified through the first low noise amplifier 501, and then enters the RX3 port of the rf transceiver 20 to perform internal signal demodulation processing.
The N1 intermediate frequency transmission signal of 5G is transmitted through TX5 of rf transceiver 20, signal amplification processing is performed through amplification circuit 10, the signal is transmitted through second duplex filter 402 after being amplified by amplification circuit 10, and is switched to second antenna 302 through control switch 60, and second antenna 302 transmits the intermediate frequency signal of 5G, thereby implementing transmission of the intermediate frequency signal of 5G.
The 5G intermediate frequency N1 received signal is received by the second antenna 302, and is switched to the second duplex filter 402 through the control switch 60, the second duplex filter 402 filters the 5G intermediate frequency signal received by the second antenna 302, and the 5G intermediate frequency signal received by the second antenna 302 is amplified through the second low noise amplifier 502, and then enters the RX5 port of the rf transceiver 20 to perform internal signal demodulation processing, thereby implementing the transmission and reception signal processing of the B20+ N1 (low frequency + intermediate frequency) endec combination.
For example, an endec combination of DC-5A-N40A (low frequency + high frequency) is realized, a 4G B5 low frequency transmission signal is transmitted through TX3 of the radio frequency transceiver 20, is subjected to signal amplification processing by the amplification circuit 10, is transmitted through the first duplex filter 401 after being amplified by the amplification circuit 10, and is switched to the first antenna 301 by the control switch 60, and the first antenna 301 transmits the 4G low frequency signal, so that transmission of the 4G low frequency signal is realized.
The 4G B5 low frequency received signal is received by the first antenna 301, and is switched to the first duplexer filter 401 through the control switch 60, the first duplexer filter 401 filters the 4G low frequency signal received by the first antenna 301, and the 4G low frequency signal received by the first antenna 301 is amplified through the first low noise amplifier 501, and then enters the RX3 port of the rf transceiver 20 to perform internal signal demodulation processing.
The N40 high frequency transmission signal of 5G is transmitted through TX4 of radio frequency transceiver 20, signal amplification processing is performed through amplification circuit 10, the signal is transmitted through second duplex filter 402 after being amplified by amplification circuit 10, and is switched to second antenna 302 through control switch 60, and second antenna 302 transmits the high frequency signal of 5G, thereby realizing transmission of the high frequency signal of 5G.
The N40 high frequency Receive (RX) signal of 5G is received by the second antenna 302, and is switched to the second duplex filter 402 through the control switch 60, the second duplex filter 402 filters the high frequency signal of 5G received by the second antenna 302, and the high frequency signal of 5G received by the second antenna 302 is amplified by the second low noise amplifier 502, and then enters the RX4 port of the rf transceiver 20 to perform internal signal demodulation processing. Thus, the transmission and reception signal processing of the B5+ N40 (low frequency + high frequency) endec combination is realized.
For example, the endec combination of DC-8A-N20A (low frequency + low frequency) is realized, a 4G B5 low frequency transmission signal is transmitted through TX3 of the radio frequency transceiver 20, is subjected to signal amplification processing by the amplification circuit 10, is transmitted through the first duplex filter 401 after being amplified by the amplification circuit 10, and is switched to the first antenna 301 by the control switch 60, and the first antenna 301 transmits the 4G low frequency signal, so that the transmission of the 4G low frequency signal is realized.
The 4G B5 low frequency received signal is received by the first antenna 301, and is switched to the first duplexer filter 401 through the control switch 60, the first duplexer filter 401 filters the 4G low frequency signal received by the first antenna 301, and the 4G low frequency signal received by the first antenna 301 is amplified through the first low noise amplifier 501, and then enters the RX3 port of the rf transceiver 20 to perform internal signal demodulation processing.
The N20 low frequency transmission signal of 5G is transmitted through TX6 of radio frequency transceiver 20, signal amplification processing is performed through amplification circuit 10, the signal is transmitted through second duplex filter 402 after being amplified by amplification circuit 10, and is switched to second antenna 302 through control switch 60, and second antenna 302 transmits the low frequency signal of 5G, thereby realizing transmission of the low frequency signal of 5G.
The N20 low frequency receive signal of 5G is received by the second antenna 302, and is switched to the second duplex filter 402 through the control switch 60, the second duplex filter 402 filters the 5G low frequency signal received by the second antenna 302, and the 5G low frequency signal received by the second antenna 302 is amplified through the second low noise amplifier 502, and finally enters the RX6 port of the radio frequency transceiver 20 to perform internal signal demodulation processing, thereby realizing the transmit-receive signal processing of the B5+ N20 (low frequency + low frequency) endec combination.
As described in detail above, the amplifying device provided by the present application, the amplifying circuit amplifies the 4G signal or the 5G signal sent by the radio frequency transceiver, and transmits the amplified 4G signal or the amplified 5G signal through the first antenna or the second antenna, so as to implement various endec combinations of each frequency band of 4G and each frequency band of 5G.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present application, and not to limit the same. Although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: it is also possible to modify the solutions described in the previous embodiments or to substitute some or all of them with equivalents. And the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present application.

Claims (14)

1. An amplification circuit, comprising: the 4G amplification module and the 5G amplification module;
the 4G amplification module comprises a first input port, a first driving amplifier connected with the first input port, a first power amplifier connected with the first driving amplifier and a first output port connected with the first power amplifier;
the 5G amplifying module comprises a second input port, a second driving amplifier connected with the second input port, a second power amplifier connected with the second driving amplifier and a second output port connected with the second power amplifier;
the first input port is configured to receive a 4G signal, the first driver amplifier and the first power amplifier are configured to amplify the 4G signal, and the first output port is configured to output the amplified 4G signal;
the second input port is configured to receive a 5G signal, the second driver amplifier and the second power amplifier are configured to amplify the 5G signal, and the second output port is configured to output the amplified 5G signal.
2. The amplification circuit of claim 1, wherein the first input port comprises a first sub-input port, a second sub-input port, and a third sub-input port;
the first sub-input port is configured to receive a 4G signal at a first frequency, the second sub-input port is configured to receive a 4G signal at a second frequency, and the third sub-input port is configured to receive a 4G signal at a third frequency;
the first frequency is greater than the second frequency, which is greater than the third frequency.
3. The amplification circuit of claim 2, wherein the first driver amplifier comprises a first sub driver amplifier, a second sub driver amplifier, and a third sub driver amplifier;
the first sub-driver amplifier is connected with the first sub-input port, the second sub-driver amplifier is connected with the second sub-input port, and the third sub-driver amplifier is connected with the third sub-input port;
the first power amplifier comprises a first sub power amplifier, a second sub power amplifier and a third sub power amplifier;
the first sub power amplifier is connected with the first sub driving amplifier, the second sub power amplifier is connected with the second sub driving amplifier, and the third sub power amplifier is connected with the third sub driving amplifier;
the first sub-driver amplifier and the first sub-power amplifier are used for amplifying 4G signals with first frequency, the second sub-driver amplifier and the second sub-power amplifier are used for amplifying 4G signals with second frequency, and the third sub-driver amplifier and the third sub-power amplifier are used for amplifying 4G signals with third frequency.
4. The amplification circuit of claim 3, wherein the first output port comprises a first sub-output port, a second sub-output port, and a third sub-output port;
the first sub-output port is connected with the first sub-power amplifier, the second sub-output port is connected with the second sub-power amplifier, and the third sub-output port is connected with the third sub-power amplifier;
the first sub-output port outputs an amplified 4G signal with a first frequency, the second sub-output port outputs an amplified 4G signal with a second frequency, and the third sub-output port outputs an amplified 4G signal with a third frequency.
5. The amplification circuit of claim 4, wherein the number of the first sub-output port, the second sub-output port, and the third sub-output port is plural;
a first sub-switch is connected between the first sub-power amplifier and the first sub-output port, a second sub-switch is connected between the second sub-power amplifier and the second sub-output port, and a third sub-switch is connected between the third sub-power amplifier and the third sub-output port;
the first sub-switch is used for controlling the first sub-power amplifier to be connected with a corresponding first sub-output port, the second sub-switch is used for controlling the second sub-power amplifier to be connected with a corresponding second sub-output port, and the third sub-switch is used for controlling the third sub-power amplifier to be connected with a corresponding third sub-output port.
6. The amplifier circuit of claim 3, wherein the first sub-driver amplifier, the second sub-driver amplifier, and the third sub-driver amplifier are connected to a first power supply, and wherein the first power amplifier, the second sub-power amplifier, and the third sub-power amplifier are connected to a second power supply.
7. The amplification circuit of claim 1, wherein the second input port comprises a fourth sub-input port, a fifth sub-input port, and a sixth sub-input port;
the fourth sub-input port is configured to receive a 5G signal at a first frequency, the fifth sub-input port is configured to receive a 5G signal at a second frequency, and the sixth sub-input port is configured to receive a 5G signal at a third frequency;
the first frequency is greater than the second frequency, which is greater than the third frequency.
8. The amplification circuit of claim 7, wherein the second driver amplifier comprises a fourth sub-driver amplifier, a fifth sub-driver amplifier, and a sixth sub-driver amplifier;
the fourth sub-driver amplifier is connected to the fourth sub-input port, the fifth sub-driver amplifier is connected to the fifth sub-input port, and the sixth sub-driver amplifier is connected to the sixth sub-input port;
the second power amplifier comprises a fourth sub power amplifier, a fifth sub power amplifier and a sixth sub power amplifier;
the fourth sub-power amplifier is connected with the fourth sub-driver amplifier, the fifth sub-power amplifier is connected with the fifth sub-driver amplifier, and the sixth sub-power amplifier is connected with the sixth sub-driver amplifier;
the fourth sub-driver amplifier and the fourth sub-power amplifier are configured to amplify a 5G signal at a first frequency, the fifth sub-driver amplifier and the fifth sub-power amplifier are configured to amplify a 5G signal at a second frequency, and the sixth sub-driver amplifier and the sixth sub-power amplifier are configured to amplify a 5G signal at a third frequency.
9. The amplification circuit of claim 8, wherein the second output port comprises a fourth sub-output port, a fifth sub-output port, and a sixth sub-output port;
the fourth sub-output port is connected to the fourth sub-power amplifier, the fifth sub-output port is connected to the fifth sub-power amplifier, and the sixth sub-output port is connected to the sixth sub-power amplifier;
the fourth sub-output port outputs the amplified 5G signal of the first frequency, the fifth sub-output port outputs the amplified 5G signal of the second frequency, and the sixth sub-output port outputs the amplified 5G signal of the third frequency.
10. The amplifying circuit according to claim 9, wherein the number of the fourth sub-output port, the fifth sub-output port, and the sixth sub-output port is plural;
a fourth sub-switch is connected between the fourth sub-power amplifier and the fourth sub-output port, a fifth sub-switch is connected between the fifth sub-power amplifier and the fifth sub-output port, and a sixth sub-switch is connected between the sixth sub-power amplifier and the sixth sub-output port;
the fourth sub-switch is configured to control the fourth sub-power amplifier to be connected to a corresponding fourth sub-output port, the fifth sub-switch is configured to control the fifth sub-power amplifier to be connected to a corresponding fifth sub-output port, and the sixth sub-switch is configured to control the sixth sub-power amplifier to be connected to a corresponding sixth sub-output port.
11. The amplifying circuit according to claim 8, wherein the fourth sub-driver amplifier, the fifth sub-driver amplifier and the sixth sub-driver amplifier are connected to a third power supply, and the fourth power amplifier, the fifth sub-power amplifier and the sixth sub-power amplifier are connected to a fourth power supply.
12. An amplifying device, comprising: the amplification circuit of any one of claims 1-11, a radio frequency transceiver and antenna connected to the amplification circuit;
the radio frequency transceiver is used for transmitting 4G signals or 5G signals, the amplifying circuit is used for amplifying the 4G signals or 5G signals, and the antenna is used for transmitting the amplified 4G signals or 5G signals.
13. The amplification device of claim 12, wherein the antenna comprises a first antenna and a second antenna;
the amplifying device further includes: a control switch connected to the first antenna and the second antenna, and a first duplex filter and a second duplex filter connected to the control switch;
the first diplex filter is configured to filter the 4G signal amplified by the amplifying circuit, the control switch is configured to control the first diplex filter to send the filtered 4G signal to a first antenna, and the first antenna is configured to transmit the filtered 4G signal;
the second duplex filter is configured to filter the 5G signal amplified by the amplifying circuit, the control switch is configured to control the second duplex filter to send the filtered 5G signal to a second antenna, and the second antenna is configured to transmit the filtered 5G signal.
14. The amplifying device according to claim 13, further comprising:
a first low noise amplifier connected to the first duplex filter, and a second low noise amplifier connected to the second duplex filter;
the first antenna is further used for receiving 4G signals, the first duplex filter is used for filtering the 4G signals received by the first antenna, the first low noise amplifier is used for amplifying the 4G signals received by the first antenna and sending the signals to the radio frequency transceiver, and the radio frequency transceiver processes the amplified 4G signals received by the first antenna;
the second antenna is further configured to receive a 5G signal, the second duplex filter is configured to filter the 5G signal received by the second antenna, the second low noise amplifier is configured to amplify the 5G signal received by the second antenna and send the amplified 5G signal to the radio frequency transceiver, and the radio frequency transceiver processes the amplified 5G signal received by the second antenna.
CN202210437554.2A 2022-04-25 2022-04-25 Amplifying circuit and amplifying device Pending CN114866040A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210437554.2A CN114866040A (en) 2022-04-25 2022-04-25 Amplifying circuit and amplifying device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210437554.2A CN114866040A (en) 2022-04-25 2022-04-25 Amplifying circuit and amplifying device

Publications (1)

Publication Number Publication Date
CN114866040A true CN114866040A (en) 2022-08-05

Family

ID=82634152

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210437554.2A Pending CN114866040A (en) 2022-04-25 2022-04-25 Amplifying circuit and amplifying device

Country Status (1)

Country Link
CN (1) CN114866040A (en)

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