CN114836824B - 籽晶提拉装置、晶体生长设备和籽晶提拉方法 - Google Patents
籽晶提拉装置、晶体生长设备和籽晶提拉方法 Download PDFInfo
- Publication number
- CN114836824B CN114836824B CN202210319101.XA CN202210319101A CN114836824B CN 114836824 B CN114836824 B CN 114836824B CN 202210319101 A CN202210319101 A CN 202210319101A CN 114836824 B CN114836824 B CN 114836824B
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- Prior art keywords
- seed crystal
- holder
- crystal
- lifting
- pulling
- Prior art date
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Links
- 239000013078 crystal Substances 0.000 title claims abstract description 442
- 238000000034 method Methods 0.000 title claims abstract description 64
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 83
- 230000007246 mechanism Effects 0.000 claims abstract description 62
- 238000001816 cooling Methods 0.000 claims abstract description 40
- 230000005540 biological transmission Effects 0.000 claims description 39
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 238000005096 rolling process Methods 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 230000010355 oscillation Effects 0.000 abstract description 48
- 230000008569 process Effects 0.000 abstract description 41
- 230000001174 ascending effect Effects 0.000 description 13
- 230000000670 limiting effect Effects 0.000 description 12
- 230000000630 rising effect Effects 0.000 description 11
- 235000014347 soups Nutrition 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000002035 prolonged effect Effects 0.000 description 5
- 230000033001 locomotion Effects 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- 230000003028 elevating effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/32—Seed holders, e.g. chucks
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (9)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202210319101.XA CN114836824B (zh) | 2022-03-29 | 2022-03-29 | 籽晶提拉装置、晶体生长设备和籽晶提拉方法 |
TW112111775A TWI836947B (zh) | 2022-03-29 | 2023-03-28 | 籽晶提拉裝置、晶體生長設備和籽晶提拉方法 |
Applications Claiming Priority (1)
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CN202210319101.XA CN114836824B (zh) | 2022-03-29 | 2022-03-29 | 籽晶提拉装置、晶体生长设备和籽晶提拉方法 |
Publications (2)
Publication Number | Publication Date |
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CN114836824A CN114836824A (zh) | 2022-08-02 |
CN114836824B true CN114836824B (zh) | 2024-03-29 |
Family
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CN202210319101.XA Active CN114836824B (zh) | 2022-03-29 | 2022-03-29 | 籽晶提拉装置、晶体生长设备和籽晶提拉方法 |
Country Status (2)
Country | Link |
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CN (1) | CN114836824B (zh) |
TW (1) | TWI836947B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116180231A (zh) * | 2022-12-30 | 2023-05-30 | 浙江晶盛机电股份有限公司 | 籽晶提升装置及单晶炉 |
CN117604619A (zh) * | 2023-10-16 | 2024-02-27 | 杭州顶星电子有限公司 | 一种单晶炉晶体提升旋转机构 |
CN117966255B (zh) * | 2024-04-01 | 2024-06-25 | 浙江晶盛机电股份有限公司 | 可消除共振的籽晶*** |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1590204A (en) * | 1977-12-31 | 1981-05-28 | V N I Monokristal | Apparatus for pulling single crystals from melt |
US5900059A (en) * | 1996-05-29 | 1999-05-04 | Komatsu Electronic Metals Co., Ltd. | Method and apparatus for fabricating semiconductor single crystal |
KR20140060019A (ko) * | 2012-11-09 | 2014-05-19 | 주식회사 케이씨씨 | 실리콘 단결정 잉곳 성장장치 |
CN110257910A (zh) * | 2019-07-26 | 2019-09-20 | 黎兴才 | 一种硅制半导体材料用单晶炉 |
CN113550001A (zh) * | 2020-04-26 | 2021-10-26 | 内蒙古中环协鑫光伏材料有限公司 | 自动稳定籽晶的单晶炉定位机构、单晶炉***及稳定方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW370580B (en) * | 1997-09-22 | 1999-09-21 | Super Silicon Crystal Res | Monocrystal pulling device |
CN2900558Y (zh) * | 2006-03-31 | 2007-05-16 | 浙江大学 | 基于温度预测补偿的直拉式晶体生长炉 |
JP2015117145A (ja) * | 2013-12-17 | 2015-06-25 | 三菱マテリアルテクノ株式会社 | 単結晶シリコン引上装置 |
-
2022
- 2022-03-29 CN CN202210319101.XA patent/CN114836824B/zh active Active
-
2023
- 2023-03-28 TW TW112111775A patent/TWI836947B/zh active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1590204A (en) * | 1977-12-31 | 1981-05-28 | V N I Monokristal | Apparatus for pulling single crystals from melt |
US5900059A (en) * | 1996-05-29 | 1999-05-04 | Komatsu Electronic Metals Co., Ltd. | Method and apparatus for fabricating semiconductor single crystal |
KR20140060019A (ko) * | 2012-11-09 | 2014-05-19 | 주식회사 케이씨씨 | 실리콘 단결정 잉곳 성장장치 |
CN110257910A (zh) * | 2019-07-26 | 2019-09-20 | 黎兴才 | 一种硅制半导体材料用单晶炉 |
CN113550001A (zh) * | 2020-04-26 | 2021-10-26 | 内蒙古中环协鑫光伏材料有限公司 | 自动稳定籽晶的单晶炉定位机构、单晶炉***及稳定方法 |
Also Published As
Publication number | Publication date |
---|---|
CN114836824A (zh) | 2022-08-02 |
TW202338169A (zh) | 2023-10-01 |
TWI836947B (zh) | 2024-03-21 |
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Address after: 221004 No.1 Xinxin Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Applicant after: Zhonghuan Leading (Xuzhou) Semiconductor Materials Co.,Ltd. Address before: 221004 No.1 Xinxin Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Applicant before: XUZHOU XINJING SEMICONDUCTOR TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20230512 Address after: 221004 No.1 Xinxin Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Applicant after: Zhonghuan Leading (Xuzhou) Semiconductor Materials Co.,Ltd. Applicant after: Zhonghuan leading semiconductor materials Co.,Ltd. Address before: 221004 No.1 Xinxin Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Applicant before: Zhonghuan Leading (Xuzhou) Semiconductor Materials Co.,Ltd. |
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Country or region after: China Address after: 221004 No.1 Xinxin Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Applicant after: Zhonghuan Leading (Xuzhou) Semiconductor Materials Co.,Ltd. Applicant after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Address before: 221004 No.1 Xinxin Road, Xuzhou Economic and Technological Development Zone, Jiangsu Province Applicant before: Zhonghuan Leading (Xuzhou) Semiconductor Materials Co.,Ltd. Country or region before: China Applicant before: Zhonghuan leading semiconductor materials Co.,Ltd. |
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