CN114833460A - Corundum processing method - Google Patents
Corundum processing method Download PDFInfo
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- CN114833460A CN114833460A CN202110050494.4A CN202110050494A CN114833460A CN 114833460 A CN114833460 A CN 114833460A CN 202110050494 A CN202110050494 A CN 202110050494A CN 114833460 A CN114833460 A CN 114833460A
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- 229910052593 corundum Inorganic materials 0.000 title claims abstract description 95
- 239000010431 corundum Substances 0.000 title claims abstract description 95
- 238000003672 processing method Methods 0.000 title claims abstract description 19
- 238000012545 processing Methods 0.000 claims abstract description 93
- 238000005520 cutting process Methods 0.000 claims abstract description 72
- 238000005488 sandblasting Methods 0.000 claims abstract description 27
- 230000001681 protective effect Effects 0.000 claims description 33
- 239000000428 dust Substances 0.000 claims description 32
- 239000010410 layer Substances 0.000 claims description 25
- 239000007888 film coating Substances 0.000 claims description 20
- 238000009501 film coating Methods 0.000 claims description 20
- 239000011248 coating agent Substances 0.000 claims description 16
- 238000000576 coating method Methods 0.000 claims description 16
- 239000011247 coating layer Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 11
- 238000007493 shaping process Methods 0.000 claims description 11
- 230000000694 effects Effects 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 5
- 239000012528 membrane Substances 0.000 claims description 3
- 238000005422 blasting Methods 0.000 claims description 2
- 238000003754 machining Methods 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 description 42
- 239000010980 sapphire Substances 0.000 description 42
- 239000011521 glass Substances 0.000 description 24
- 239000010979 ruby Substances 0.000 description 22
- 229910001750 ruby Inorganic materials 0.000 description 22
- 239000000047 product Substances 0.000 description 17
- 238000005240 physical vapour deposition Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- 239000010437 gem Substances 0.000 description 2
- 229910001751 gemstone Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 238000013001 point bending Methods 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
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- 230000009467 reduction Effects 0.000 description 1
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Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
- B23K26/142—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor for the removal of by-products
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
Abstract
The invention relates to the field of laser processing, and provides a corundum processing method, which comprises the following steps: performing infrared picosecond cutting on the non-sandblasting surface of the corundum according to a preset processing path to form a plurality of cutting points meeting the preset distance requirement on the corundum; performing CO on the sand blasting surface or the non-film-coated surface of the corundum according to a preset processing path 2 And breaking the corundum along a preset processing path. The corundum processing method provided by the invention can improve the corundum processing efficiency and simultaneously ensure the corundum processing quality.
Description
Technical Field
The invention belongs to the field of laser processing, and particularly relates to a corundum processing method.
Background
Corundum is a mixture of alumina (Al) 2 O 3 ) The crystal of (4) to form a gemstone. Corundum generally includes ruby and sapphire. Ruby refers to corundum doped with metallic chromium and having a bright red color. Sapphire refers to corundum of a color other than red. Corundum has good thermal property, electrical property, corrosion resistance and infrared transmission property, so that corundum is widely applied to the field of optical devices.
However, corundum is difficult to process due to its high hardness. The processing of corundum is divided into bare glass processing and coating processing. The bare glass processing generally adopts laser to enter from the surface of a corundum crystal, the corundum is cut into small pieces, then the small pieces are fixed through a swinging disc, and finally the coating of the small pieces is finished. The bare glass has low processing efficiency, the small glass needs to be fixed in a tray before film coating, and the glass needs to be detached after film coating. The coating processing adopts laser to carry out incident cutting from a non-coating surface, and the coating is not cut, so that the coating damage of a protection area is easily caused. And for the coated sandblasted sapphire, the problems of large heat damage of the film layer and smudgy of the non-coated surface are easy to occur during processing.
Disclosure of Invention
The invention aims to provide a corundum processing method, which aims to improve the corundum processing efficiency and ensure the corundum processing quality.
In order to achieve the purpose, the invention adopts the technical scheme that: provided is a corundum processing method, which comprises the following steps:
performing infrared picosecond cutting on a non-sandblasting surface of the corundum according to a preset processing path to form a plurality of cutting points meeting the preset distance requirement on the corundum;
performing CO on the sand blasting surface or the non-film-coated surface of the corundum according to the preset processing path 2 And breaking the corundum along the preset processing path.
Optionally, before performing infrared picosecond cutting on a non-sandblasted surface of a corundum according to a preset processing path to form a plurality of cutting points meeting a preset distance requirement on the corundum, the method further includes:
if the corundum comprises a film-coated surface provided with a protective film, performing CO on the film-coated surface according to an initial processing path 2 And cutting the film to remove the protective film on the non-product area on the film coating surface, or removing the protective film on the non-product area on the film coating surface and cutting off at least one part of the film coating layer, wherein the film coating surface is the non-sandblasting surface or the opposite surface of the non-sandblasting surface.
Optionally, if the corundum comprises a film-coated surface provided with a protective film, performing CO (carbon monoxide) on the film-coated surface according to the preset processing path 2 After the membrane is cut, the method also comprises the following steps:
and if the coating surface is the non-sandblasting surface, ultraviolet cleaning is carried out on the residual coating layer on the initial processing path, and the preset processing path is located in the area where the coating layer is cleaned.
Optionally, CO is removed by an annular dust removal device 2 Dust generated during film cutting and/or ultraviolet removal;
the annular dust removal device is provided with an annular body, the inner annular surface of the annular body is provided with an air outlet, and the outer annular surface is provided with an air suction opening.
Optionally, if the corundum comprises a coated surface provided with a protective film, performing CO on the coated surface according to an initial processing path 2 Cutting the film, comprising:
controlling the CO by an energy following mode 2 Laser output energy of the cut film, the energy following mode comprising:
X＝Ratio*vel+MinPower+Prfcomd
wherein X is the laser output energy ratio;
ratio is a follow-up Ratio;
vel is the film cutting speed;
MinPower is the minimum energy output;
prfcomm is the duty cycle.
Optionally, the CO is 2 The cutting width of the cutting film is 50-400 mu m, the protective film is a PET protective film, and the coating film layer comprises a PVD film layer/an NHT film layer.
Optionally, an initial infrared picosecond laser is generated by an infrared picosecond laser, the initial infrared picosecond laser is subjected to beam expanding and shaping, and then is focused by a focusing device to obtain an infrared picosecond processing beam for infrared picosecond cutting, and the spot diameter of the infrared picosecond processing beam is 1-3 μm;
by CO 2 The laser generates a first initial CO 2 Laser, the first initial CO 2 Laser is first expanded and shaped and then focused by a focusing device to obtain the laser used for CO 2 First CO of cutting film 2 Laser beam, the first CO 2 The diameter of a light spot of the laser beam is 20-200 mu m;
generating ultraviolet laser by an ultraviolet laser, wherein the ultraviolet laser is subjected to beam expanding and shaping and then is focused by a focusing device to obtain an ultraviolet laser beam for ultraviolet removal, and the spot diameter of the ultraviolet laser beam is 10-50 microns;
by CO 2 Laser generating a second initial CO 2 Laser, the second initial CO 2 Laser is first expanded and shaped and then focused by a focusing device to obtain the laser used for CO 2 Second CO of lobe 2 Laser beam, the second CO 2 The diameter of a light spot of the laser beam is 20-100 mu m, and the second CO is 2 The distance between the focus of the laser beam and the sand-blasting surface or the non-film-coated surface is 5-15 mm.
Optionally, infrared picosecond cutting and/or CO removal is performed by a dust removal device 2 Dust generated during the breaking.
Optionally, the infrared picosecond cut, the CO are monitored by a CCD vision module 2 Splinting and/or processing effects of said uv removal.
Optionally, the preset distance requirement includes that the distance between adjacent cutting points is a specified value, and the specified value includes 5-10 μm.
The corundum processing method provided by the invention can improve the corundum processing efficiency and simultaneously ensure the corundum processing quality.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
FIG. 1 is a schematic flow chart of a corundum processing method according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of different types of corundum according to an embodiment of the present invention;
FIG. 3 is a simplified schematic diagram of an infrared picosecond cut according to an embodiment of the present invention;
FIG. 4 is a schematic representation of CO production performed in accordance with an embodiment of the present invention 2 A simplified schematic of lobe cracking;
FIG. 5 is a schematic representation of CO production performed by an embodiment of the present invention 2 A simple schematic diagram of cutting the film;
fig. 6 is a simplified schematic diagram of uv removal according to an embodiment of the present invention.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or be indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or be indirectly connected to the other element.
It will be understood that the terms "length," "width," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like, as used herein, refer to an orientation or positional relationship indicated in the drawings that is solely for the purpose of facilitating the description and simplifying the description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and is therefore not to be construed as limiting the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
The method of corundum processing provided by the present invention will now be described. As shown in fig. 1, the corundum processing method provided by the embodiment of the invention comprises the following steps:
and S30, performing infrared picosecond cutting on the non-sandblasting surface of the corundum according to a preset processing path to form a plurality of cutting points meeting the preset distance requirement on the corundum.
Understandably, this step is used to produce latent cracks on the corundum to improve the quality of the corundum product (characterized by 3PB strength). As shown in fig. 2, corundum includes, but is not limited to, bare glass sapphire (red) (fig. 2a), bare glass sandblasted sapphire (red) (fig. 2b), coated sapphire (red) (fig. 2c), and coated sandblasted sapphire (red) (fig. 2 d). Wherein, the bare glass sapphire (ruby) comprises a sapphire body C01; the bare glass sand blasting sapphire (red) comprises a sapphire body C01 and a sand blasting layer C02; the coated sapphire (ruby) comprises a sapphire body C01, a coating layer C03 and a protective film layer C04; the coated sandblasted sapphire (ruby) comprises a sapphire body C01, a sandblasted layer C02, a coated layer C03 and a protective film C04. In some examples, the corundum may be sapphire glass in the form of a sheet.
The preset processing path refers to a processing path set based on the requirements of the shape of the product. The corresponding preset processing paths of the products with different shapes are different. The non-sandblasting surface of the corundum may be the upper or lower surface as illustrated in fig. 2a, the upper surface as illustrated in fig. 2b, the upper or lower surface (generally, the lower surface) as illustrated in fig. 2c, or the upper surface as illustrated in fig. 2 d.
Infrared picosecond cutting refers to cutting a corundum using a laser generated by an infrared picosecond laser. In an example, as shown in fig. 3, an infrared picosecond laser 001 generates laser, and the laser passes through a beam guide shaping device 002 and a focusing device 003 and then is applied to a sapphire body C01 of bare glass sandblasted sapphire, so as to cut the bare glass sandblasted sapphire.
The pulse laser generated by the infrared picosecond laser can generate a plurality of cutting points which meet the requirement of the preset distance on the corundum according to the preset processing path. The preset spacing requirement can be set according to actual requirements. In one example, the predetermined pitch requirement includes equal distances between adjacent cut points, and the distance between adjacent cut points is between 5-10 μm. The cutting points can form hidden cracks along a preset processing path, and the problem of low strength of a processed corundum product can be solved. Tests show that the 3PB strength (3-point bending strength) of the processed corundum product has the minimum value of more than 410MPa, the average value of more than 450MPa and the maximum value of more than 520 MPa.
S40, performing CO on the sand blasting surface or the non-film coating surface of the corundum according to the preset processing path 2 And breaking the corundum along the preset processing path.
Understandably, this step is used to cut the corundum to obtain the final corundum finished product (either finished or semi-finished). The corundum cut by infrared picosecond only forms hidden cracks, and a final corundum finished product can be formed by further processing. CO may be used 2 The corundum is processed in a splintering mode. CO 2 2 Splintering refers to the use of CO 2 The laser generated by the laser cuts the corundum. Here, CO 2 The laser used for the splitting is a continuous laser. By CO 2 After the splitting, a finished product or a semi-finished product matched with the preset processing path can be formed. Wherein, the sandblasted surface refers to a sandblasted surface treated by a sandblasting process. CO 2 2 The laser generated by the laser can processSuch surfaces. The uncoated side refers to the bare crystal face without the coating.
In one example, as shown in FIG. 4, the CO 2 The laser 011 generates laser, and the laser is beaten on the sandblasted surface C02 of bare glass sandblasted sapphire after passing through the beam conductor shaping device 012 and the focusing device 013, and the cutting of the bare glass sandblasted sapphire is realized. Wherein, dust collector 015 is used for cleaing away the dust and the waste residue that produce when cutting.
Note that the processing object at this step may be bare glass sapphire (ruby), bare glass sandblasted sapphire (ruby), coated sapphire (ruby), or coated sandblasted sapphire (ruby).
When the object to be processed is a bare sapphire (ruby), the non-sandblasted surface of step S30 and the non-plated surface of step S40 are bare glass surfaces.
When the object to be processed is a bare glass-blasted sapphire (ruby), the non-blasted surface in step S30 refers to the bare glass surface, and the processed surface in step S40 refers to the blasted surface.
When the processing object is a sapphire (ruby) to be coated, the non-sandblasted surface in step S30 is the bare glass surface, and the coated surface is the opposite surface of the non-sandblasted surface (for example, the bare glass surface is the upper surface, and the coated surface is the lower surface, and they are opposite to each other), and in this case, step S40 is the same as the processing surface in step S30.
When the object to be processed is a coated sandblasted sapphire (ruby), the non-sandblasted surface in step S30 is a coated surface, and the processed surface in step S40 is a sandblasted surface.
In the steps S30-S40, infrared picosecond cutting is carried out on the non-sandblasting surface of the corundum according to a preset processing path, so that a plurality of cutting points meeting the preset distance requirement are formed on the corundum, hidden cracks can be formed on a plurality of cutting points formed by cutting, and the mechanical strength of a processed corundum finished product is ensured. Performing CO on the sand blasting surface or the non-film-coated surface of the corundum according to the preset processing path 2 And splitting to crack the corundum along the preset processing path to obtain the corundum finished product with the shape meeting the requirement.
Optionally, before step S30, that is, before performing infrared picosecond cutting on the non-blasting surface of the corundum according to the preset processing path to form a plurality of cutting points meeting the preset distance requirement on the corundum, the method further includes:
s10, if the corundum comprises a film-coated surface provided with a protective film, carrying out CO on the film-coated surface according to an initial processing path 2 And cutting the film to remove the protective film on the non-product area on the film coating surface, or removing the protective film on the non-product area on the film coating surface and cutting off at least one part of the film coating layer, wherein the film coating surface is the non-sandblasting surface or the opposite surface of the non-sandblasting surface.
Understandably, this step is used to remove the protective film on the non-product areas on the corundum. In some cases, this step may also achieve dicing of the plated layer. In one example, as shown in FIG. 5, the CO 2 The laser 011 generates laser, and the laser passes through the beam guide shaping device 012 and the focusing device 013 and then strikes the protective film C04 and the plated layer C03 of the plated sapphire, so that the cutting of the protective film C04 and the plated layer C03 of the plated sapphire is realized. Wherein, annular dust collector 016 is used for removing dust and waste residue produced during cutting. The annular dust collector 016 is provided with an annular body, an air outlet 0161 is arranged on the inner annular surface of the annular body, and an air pumping hole 0162 is arranged on the outer annular surface.
The initial processing path is a processing path based on a corundum finished product setup. Since the processing objects of the initial processing path are the protective film and the coating layer, and the requirement for the processing precision is low, the initial processing path may be the same as the preset processing path or slightly deviated from the preset processing path (may be larger or smaller).
Whether to cut coating C03 can be determined according to the processing requirements. That is, in some cases, only the protective film C04 is cut. In another case, the protective film C04 and the plating film C03 need to be cut.
Note that the processing object at this step may be coated sapphire (ruby) or coated sandblasted sapphire (ruby).
When the processing object is a sapphire (ruby) to be coated, the non-sandblasted surface in step S30 is the bare glass surface, that is, the coated surface in step S10 is the opposite surface of the non-sandblasted surface in step S30 (for example, the bare glass surface is the upper surface, and the coated surface is the lower surface, and they are opposite to each other).
When the object to be processed is a coated sandblasted sapphire (ruby), the non-sandblasted surface in step S30 is referred to as a coated surface, that is, the coated surface in step S10 is the same as the non-sandblasted surface in step S30.
Optionally, after step S10, if the corundum includes a film-coated surface with a protective film, performing CO on the film-coated surface according to the preset processing path 2 After the membrane is cut, the method also comprises the following steps:
and S20, if the film coating surface is the non-sandblasting surface, performing ultraviolet removal on the residual film coating layer on the initial processing path, wherein the preset processing path is in the region where the film coating layer is removed.
Understandably, the processing object of step S20 may be a coated sandblasted sapphire (ruby). Coated sandblasted sapphire (ruby) includes a coated face (i.e., a non-sandblasted face) and a sandblasted face. The film coating surface is a non-sandblasting surface.
Ultraviolet cleaning refers to cleaning residual coating layers on an initial processing path by using ultraviolet laser. In an example, as shown in fig. 6, an ultraviolet laser 021 generates an ultraviolet laser, and the ultraviolet laser passes through a beam guide shaping device 022 and a focusing device 023 and then strikes a coating layer C03 of the coated sandblasted sapphire, so that the coating layer C03 is completely removed. Wherein, dust and waste slag generated during cutting are removed by an annular dust removing device (not shown, the structure of which is the same as that of the annular dust removing device 016). A CCD vision module 024 may be used to monitor the cleaning effect of coating C03. Here, the thickness of the UV laser-cleanable coating layer C03 was 10-50 μm.
After the step S20 is completed, a strip region with the removed coating layer along the initial processing path may be formed, where the width of the strip region is 50-200 μm, and the predetermined processing path is located in the strip region. The strip of removed coating may allow for an infrared picosecond cut.
Optionally, CO is removed by an annular dust removal device 2 Dust generated during film cutting and/or ultraviolet removal;
the annular dust removal device is provided with an annular body, the inner annular surface of the annular body is provided with an air outlet, and the outer annular surface is provided with an air suction opening.
Understandably, in performing the steps S10 and S20, dust generated at the time of processing may be removed by the ring-shaped dust removing device. As shown in fig. 5, the annular dust collector 016 has an annular body, an air outlet 0161 is disposed on the inner annular surface of the annular body, and an air exhaust port 0162 is disposed on the outer annular surface. The air outlet 0161 blows air flow which can take away dust generated at a cutting point, and the air suction opening 0162 can suck the air flow containing the dust, so that the pollution of the dust to a corundum finished product is reduced.
Optionally, if the corundum comprises a coated surface provided with a protective film, performing CO on the coated surface according to an initial processing path 2 Cutting the film, comprising:
controlling the CO by an energy following mode 2 Laser output energy of the cut film, the energy following mode comprising:
X＝Ratio*vel+MinPower+Prfcomd
wherein X is the laser output energy ratio;
ratio is a follow-up Ratio;
vel is the film cutting speed;
MinPower is the minimum energy output;
prfcomm is the duty cycle.
Understandably, when step S10 is executed, an energy following mode can be adopted to prevent the slow moving speed of the laser cutting head when the path is not straight line, which leads to excessive energy accumulation and burns the protective film and the coating layer at the position.
The laser output energy ratio X is reduced along with the reduction of the film cutting speed, so that the burning phenomenon can be effectively prevented when the arc is cut. Meanwhile, the minimum energy output and the duty ratio are set, so that CO can be ensured 2 The laser has sufficient energy to perform the dicing step.
Optionally, the CO is 2 The cutting width of the cutting film is 50-400 mu m, the protective film is a PET protective film, and the coating film layer comprises a PVD film layer/an NHT film layer.
Understandably, the CO of step S10 is executed 2 And cutting the film to form a cutting channel with the cutting width of 50-400 mu m so as to allow an infrared picosecond laser to process the gem body through the cutting channel. The protective film may be a PET (polyester resin) protective film. The coating layer comprises a PVD (physical vapor deposition) film layer (a metal coating formed by physical vapor deposition)/an NHT film layer (a thermal transfer film, namely an ink layer).
Optionally, an initial infrared picosecond laser is generated by an infrared picosecond laser, the initial infrared picosecond laser is subjected to beam expanding and shaping, and then is focused by a focusing device to obtain an infrared picosecond processing beam for infrared picosecond cutting, and the spot diameter of the infrared picosecond processing beam is 1-3 μm;
by CO 2 The laser generates a first initial CO 2 Laser, the first initial CO 2 Laser is first expanded and shaped and then focused by a focusing device to obtain the laser used for CO 2 First CO of cutting film 2 Laser beam, the first CO 2 The diameter of a light spot of the laser beam is 20-200 mu m;
generating ultraviolet laser by an ultraviolet laser, wherein the ultraviolet laser is subjected to beam expanding and shaping and then is focused by a focusing device to obtain an ultraviolet laser beam for ultraviolet removal, and the spot diameter of the ultraviolet laser beam is 10-50 microns;
by CO 2 Laser generating a second initial CO 2 Laser, the second initial CO 2 Laser is first expanded and shaped and then focused by a focusing device to obtain the laser used for CO 2 Second CO of lobe 2 Laser beam, the second CO 2 The diameter of a light spot of the laser beam is 20-100 mu m, and the second CO is 2 The distance between the focus of the laser beam and the sand-blasting surface or the non-film-coated surface is 5-15 mm.
It can be understood that when the processing object is bare glass sapphire (ruby), steps S30 and S40 are performed, and the lasers used at this time include an infrared picosecond laser and CO 2 A laser.
When the processing object is bare glass sandblasted sapphire (ruby), the steps S30 and S40 are performed, and the laser used at this time includes infraredPicosecond laser and CO 2 A laser.
When the processing object is a coated sapphire (red), the steps S10, S30 and S40 are performed, and the lasers used at this time include an infrared picosecond laser and CO 2 A laser.
When the processing object is a coated sandblasted sapphire (ruby), the steps S10, S20, S30 and S40 are performed, and the lasers used at this time include an infrared picosecond laser, an ultraviolet laser and CO 2 A laser.
It should be noted that step S10 and step S40 both use CO 2 The laser has different working parameters and different functions. Step S10 is for slitting and step S40 is for splitting.
After the various lasers are subjected to beam expanding and shaping, the energy of laser spots can be more uniform, and the shapes and the sizes of the laser spots can be flexibly adjusted, so that the processing requirements can be better met. Then, in step S40, the expanded and shaped CO 2 The light beam with spot reduced to 20-100 μm can reduce CO 2 And (3) burning the protective film and the coating layer near the preset processing path by the light beam.
In one example, the infrared picosecond laser generates a light beam with the diameter of 2-3mm, the diameter of the light beam is changed into 7-10mm after beam expansion, and the light beam is focused by the focusing device to generate a light spot with the diameter of 1-3 mu m. CO 2 2 The laser can generate a 2-4mm light beam, the diameter of the light beam is changed into 8-12cm after beam expansion, and the light beam is focused by the focusing device to generate a laser spot with the diameter of 20-100 mu m (step S40).
Optionally, infrared picosecond cutting and/or CO removal is performed by a dust removal device 2 Dust generated during splintering.
Understandably, the CO of step S40 after performing the infrared picosecond cut of step S30 2 During the splintering, certain dust is also generated. At this time, the dust generated in these two steps can be removed by a dust removing device. The dust removing device can adopt an industrial dust remover.
Optionally, the infrared picosecond cut, the CO are monitored by a CCD vision module 2 Splintering and/or addition of said UV-scavengerAnd (5) working effect.
It is understood that the processing objects in steps S20-S40 are corundum during processing, the processing requirements are high, and the processing effects in steps S20-S40 can be monitored by a CCD vision module. For example, the effect of the infrared picosecond cut in step S30 is monitored by the CCD vision module 004; monitoring CO in step S40 by CCD Vision Module 014 2 The effect of splintering; the effect of uv removal in step S20 is monitored by the CCD vision module 024.
Optionally, the preset distance requirement includes that the distance between adjacent cutting points is a specified value, and the specified value includes 5-10 μm.
Understandably, by means of infrared picosecond cutting, several equidistant cutting points can be formed on the corundum, the distance between adjacent cutting points being the same specified value, which can be 5-10 μm. The diameter of the cutting point may be 1-3 μm.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. A corundum processing method is characterized by comprising the following steps:
performing infrared picosecond cutting on a non-sandblasting surface of the corundum according to a preset processing path to form a plurality of cutting points meeting the preset distance requirement on the corundum;
performing CO on the sand blasting surface or the non-film-coated surface of the corundum according to the preset processing path 2 And breaking the corundum along the preset processing path.
2. The corundum processing method according to claim 1, wherein before the infrared picosecond cutting is carried out on the non-blasting surface of the corundum according to the preset processing path so as to form a plurality of cutting points which meet the preset spacing requirement on the corundum, the method further comprises the following steps:
if the corundum comprises a film-coated surface provided with a protective film, performing film coating on the film-coated surface according to an initial processing pathCO 2 And cutting the film to remove the protective film on the non-product area on the film coating surface, or removing the protective film on the non-product area on the film coating surface and cutting off at least one part of the film coating layer, wherein the film coating surface is the non-sandblasting surface or the opposite surface of the non-sandblasting surface.
3. The corundum processing method of claim 2, wherein if said corundum includes a coated surface provided with a protective film, CO is carried out on said coated surface according to said predetermined processing path 2 After the membrane is cut, the method also comprises the following steps:
and if the coating surface is the non-sandblasting surface, ultraviolet cleaning is carried out on the residual coating layer on the initial processing path, and the preset processing path is located in the area where the coating layer is cleaned.
4. The corundum processing method according to claim 3, characterized in that CO is removed by an annular dust-removing device 2 Dust generated during film cutting and/or ultraviolet removal;
the annular dust removal device is provided with an annular body, the inner annular surface of the annular body is provided with an air outlet, and the outer annular surface is provided with an air suction opening.
5. The corundum processing method of claim 2, wherein if the corundum includes a coated surface provided with a protective film, CO is carried out on the coated surface according to an initial processing path 2 Cutting the film, comprising:
controlling the CO by an energy following mode 2 Laser output energy of the cut film, the energy following mode comprising:
X＝Ratio*vel+MinPower+Prfcomd
wherein X is the laser output energy ratio;
ratio is a follow-up Ratio;
vel is the film cutting speed;
MinPower is the minimum energy output;
prfcomm is the duty cycle.
6. The corundum processing method of claim 2, wherein the CO is 2 The cutting width of the cutting film is 50-400 mu m, the protective film is a PET protective film, and the coating film layer comprises a PVD film layer/an NHT film layer.
7. The corundum processing method according to claim 3, characterized in that an infrared picosecond laser is used for generating initial infrared picosecond laser, the initial infrared picosecond laser is subjected to beam expanding and shaping and then is focused by a focusing device to obtain an infrared picosecond processing beam for infrared picosecond cutting, and the spot diameter of the infrared picosecond processing beam is 1-3 μm;
by CO 2 The laser generates a first initial CO 2 Laser, the first initial CO 2 Laser is first expanded and shaped and then focused by a focusing device to obtain the laser used for CO 2 First CO of cutting film 2 Laser beam, the first CO 2 The diameter of a light spot of the laser beam is 20-200 mu m;
generating ultraviolet laser by an ultraviolet laser, wherein the ultraviolet laser is subjected to beam expanding and shaping and then is focused by a focusing device to obtain an ultraviolet laser beam for ultraviolet removal, and the spot diameter of the ultraviolet laser beam is 10-50 microns;
by CO 2 Laser generating a second initial CO 2 Laser, the second initial CO 2 Laser is first expanded and shaped and then focused by a focusing device to obtain the laser used for CO 2 Second CO of lobe 2 Laser beam, the second CO 2 The diameter of a light spot of the laser beam is 20-100 mu m, and the second CO is 2 The distance between the focus of the laser beam and the sand-blasting surface or the non-film-coated surface is 5-15 mm.
8. The corundum processing method according to claim 1, characterized in that the infrared picosecond cutting and/or CO removal is carried out by means of a dust-removal device 2 Dust generated during splintering.
9. The corundum processing method of claim 3, characterized in thatIn that the infrared picosecond cut, the CO are monitored by a CCD vision module 2 Splinting and/or processing effects of said uv removal.
10. The corundum machining method of claim 1, wherein the preset spacing requirement includes that the distance between adjacent cutting points is a specified value, and the specified value includes 5-10 μm.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1973375A (en) * | 2004-03-29 | 2007-05-30 | J.P.瑟塞尔联合公司 | Method of separating layers of material using laser beam |
| CN106102986A (en) * | 2016-06-08 | 2016-11-09 | 大族激光科技产业集团股份有限公司 | method and device for cutting sapphire |
| CN107649789A (en) * | 2017-10-24 | 2018-02-02 | 武汉华星光电半导体显示技术有限公司 | Soft panel cutting equipment and soft panel cutting method |
| CN108067744A (en) * | 2016-11-18 | 2018-05-25 | 蓝思科技（长沙）有限公司 | A kind of processing method of the sapphire wafer product of the frame containing ink |
| CN109702356A (en) * | 2019-01-09 | 2019-05-03 | 蓝思智能机器人(长沙)有限公司 | A method of laser cutting covering protection film glass |
-
2021
- 2021-01-14 CN CN202110050494.4A patent/CN114833460A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1973375A (en) * | 2004-03-29 | 2007-05-30 | J.P.瑟塞尔联合公司 | Method of separating layers of material using laser beam |
| CN106102986A (en) * | 2016-06-08 | 2016-11-09 | 大族激光科技产业集团股份有限公司 | method and device for cutting sapphire |
| CN108067744A (en) * | 2016-11-18 | 2018-05-25 | 蓝思科技（长沙）有限公司 | A kind of processing method of the sapphire wafer product of the frame containing ink |
| CN107649789A (en) * | 2017-10-24 | 2018-02-02 | 武汉华星光电半导体显示技术有限公司 | Soft panel cutting equipment and soft panel cutting method |
| CN109702356A (en) * | 2019-01-09 | 2019-05-03 | 蓝思智能机器人(长沙)有限公司 | A method of laser cutting covering protection film glass |
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