CN114824091A - PEDOT (Poly ethylene terephthalate): PSS (Poly styrene)/Nafion composite film, gallium arsenide-based heterojunction solar cell and preparation method thereof - Google Patents

PEDOT (Poly ethylene terephthalate): PSS (Poly styrene)/Nafion composite film, gallium arsenide-based heterojunction solar cell and preparation method thereof Download PDF

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CN114824091A
CN114824091A CN202210417733.XA CN202210417733A CN114824091A CN 114824091 A CN114824091 A CN 114824091A CN 202210417733 A CN202210417733 A CN 202210417733A CN 114824091 A CN114824091 A CN 114824091A
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pss
pedot
nafion
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李国强
刘沛鑫
邓曦
莫由天
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South China University of Technology SCUT
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
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    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H—ELECTRICITY
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H—ELECTRICITY
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
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Abstract

The invention belongs to the technical field of solar cells, and discloses a PEDOT (Poly ethylene glycol Ether-Co-Polymer)/Nafion composite film, a gallium arsenide-based heterojunction solar cell and a preparation method thereof. The solar cell comprises a back electrode, a gallium arsenide substrate, a composite layer, a window layer and a front electrode. According to the invention, the composite layer composed of the PEDOT, PSS and Nafion composite film is obtained by spin-coating the PEDOT, PSS and Nafion on the gallium arsenide substrate through a spin-coating process, so that the series resistance of the device can be reduced, the separation and the transportation of carriers are accelerated, the photoelectric conversion efficiency of the device is obviously improved, the device has high light transmittance and excellent conductivity, and the solar cell prepared by combining with the gallium arsenide substrate has higher open-circuit voltage and excellent conversion efficiency; meanwhile, the passivation effect is achieved, the interface characteristic between the semiconductor device and the substrate is improved, the recombination of carriers at the interface is reduced, and the performance of the semiconductor device is improved.

Description

PEDOT (polyethylene terephthalate)/PSS (Poly styrene/Nafion) composite film, gallium arsenide based heterojunction solar cell and preparation method thereof
Technical Field
The invention relates to the technical field of solar cells, in particular to a PEDOT (Poly ethylene glycol Ether-Co-monomer)/PSS (Nafion) composite film, a gallium arsenide-based heterojunction solar cell and a preparation method thereof.
Background
The development of the solar cell technology greatly reduces the consumption of fossil energy, and is beneficial to environmental protection and reduction of carbon emission. As one of the most mature technologies, the silicon-based solar cell is widely applied in the civil field by virtue of the advantages of abundant sources, mature process and the like. The continuous development of materials makes solar cell devices gradually abundant in types, such as perovskite solar cells, organic solar cells, thin film solar cells and the like. The III-V group semiconductor compound represented by gallium arsenide is widely regarded as a battery material, and due to the large forbidden bandwidth, the III-V group semiconductor compound can be well matched with the solar spectrum, and meanwhile, the III-V group semiconductor compound has excellent high-temperature resistance and high-energy particle irradiation resistance, so that the III-V group semiconductor compound can be applied to a concentrator battery and a space battery.
Even though the theoretical photoelectric conversion efficiency of the gallium arsenide-based solar cell is relatively high, the popularization and application of the preparation technology and the high cost of the gallium arsenide-based solar cell are severely limited, and the gallium arsenide-based semiconductor solar cell has the problems of serious lattice mismatch between epitaxial layers, complex process, easy recombination of current carriers at an interface and the like in the preparation process. In conclusion, the device performance of the gallium arsenide-based solar cell still has a great progress space. Therefore, it is proposed to use heterogeneous materials such as carbon materials, polymers, inorganic compounds, etc. as carrier transport layers to realize the preparation of high-performance heterojunction solar cells, wherein PEDOT: PSS is a hole transport material which is commonly used, but still has the problem of low conductivity, etc., and researchers usually dope some substances in PEDOT: PSS to improve various performances such as the conductivity.
For example, the prior art discloses an organic solar cell using In2Se3 doped PEDOT: PSS as a composite layer and a preparation method thereof, wherein the organic solar cell comprises an anode substrate, the composite layer, an active layer, an electron transport layer and a cathode layer which are sequentially stacked; the composite layer is In 2 Se 3 PSS. The organic solar cell of the invention uses high conductivityIn of high transmittance 2 Se 3 (ii) a Firstly, the In2Se3 has higher conductivity, so that the charge transmission efficiency of PEDOT and PSS can be effectively improved, and the sensitivity to the thickness of a film is reduced; second In 2 Se 3 The light transmittance is high, so that the active layer can effectively utilize incident light; finally, In the present invention 2 Se 3 The powder is mixed with deionized water and isopropanol to make a solution, which is not only environmentally friendly, but also enables it to be doped in PEDOT: PSS.
The prior art discloses doping PEDOT with AuNCs: PSS is a tin-containing perovskite solar cell with a composite layer and a preparation method thereof. The cathode comprises an anode base, a composite layer, a tin-containing perovskite active layer, an electron transmission layer, a hole blocking layer and a cathode layer which are sequentially stacked, wherein the composite layer is prepared from AuNCs doped PEDOT (Poly ethylene glycol ether ketone) PSS (Poly ethylene styrene). The introduction of AuNCs can improve the conductivity of PEDOT: PSS, so that the hole extraction, transmission and collection efficiency of the device can be effectively improved, secondly, the AuNCs doped PEDOT: PSS can improve the interface interaction with an active layer, so that the interface charge recombination is reduced, and finally, plasma light scattering and some near-field coupling effects of AuNCs can promote more light capture and enhance the light absorption of perovskites.
Disclosure of Invention
The invention provides a PEDOT/PSS/Nafion composite film for overcoming the problems that the current carriers at the interface of a gallium arsenide-based semiconductor solar cell in the prior art are easy to recombine, the conductivity is low, the photoelectric conversion efficiency is low and the like.
Meanwhile, the PEDOT/PSS/Nafion composite film/gallium arsenide-based heterojunction solar cell is provided.
Meanwhile, the preparation method of the PEDOT/PSS/Nafion composite film/gallium arsenide-based heterojunction solar cell is provided.
In order to solve the technical problems, the technical scheme of the invention is as follows:
a PEDOT, PSS/Nafion composite film comprises the following preparation steps:
step 1, mixing PEDOT, namely a PSS aqueous solution, an ethylene glycol solution and an isopropanol solution to obtain a mixed spin-on solution;
and 2, spin-coating the mixed spin-coating liquid on one surface of the cleaned substrate, then annealing, drying to form a film, then spin-coating a Nafion aqueous solution, and annealing to obtain the composite layer of the PEDOT, PSS/Nafion composite film.
The PEDOT/PSS/Nafion composite film is preferably 85-125 nm thick and can be used as a composite layer of a solar cell, and in the thickness range, the composite layer can be ensured to be easy to form pinholes to generate leakage current due to too thin thickness, and can also be ensured to be larger in series resistance of the cell due to the fact that holes are difficult to transfer to electrodes due to too thick thickness, and meanwhile, the PEDOT/PSS/Nafion composite film has excellent light transmittance.
Further preferably, the thickness of the PEDOT: PSS/Nafion composite film is 105 nm.
According to the invention, after the spin coating is finished, the annealing treatment is carried out in the step 2, so that the volatilization of the solvent can be accelerated, and the contact between the film layer and the substrate is enhanced.
Preferably, the mass fraction of the aqueous solution of PEDOT and PSS in the step 1 is 1.3-1.7%.
Preferably, the mass fraction of the glycol solution in the step 1 is 5-9%.
Preferably, the mass fraction of the isopropanol solution in the step 1 is 0.1-0.3%.
Preferably, the volume ratio of the PEDOT to the PSS aqueous solution, the ethylene glycol solution and the isopropanol solution in the step 1 is as follows: 1-3: 1-3.
Further preferably, in the step 1, the mass fraction of the aqueous solution of PEDOT to PSS is 1.5%, the mass fraction of the ethylene glycol solution is 7%, the mass fraction of the isopropanol solution is 0.2%, and the volume ratio of the aqueous solution of PEDOT to PSS, the ethylene glycol solution and the isopropanol solution is 1:1: 1.
Preferably, the mass fraction of the Nafion aqueous solution in the step 2 is 3-7%.
Further preferably, the mass fraction of the Nafion aqueous solution in step 2 is 5%.
Preferably, the step 2 is to centrifuge the mixed spin-coating liquid, and spin-coat the supernatant, wherein the rotation speed of the centrifugation is 1500-3000 rpm, and the centrifugation time is 1-20 min.
Further preferably, in the step 2, the mixed spin-coating solution is centrifuged, and then the supernatant is spin-coated, wherein the rotation speed of the centrifugation is 2000rpm, and the centrifugation time is 15 min.
Preferably, the rotation number of the mixed spin-coating liquid in the step 2 is 1500-3000 rpm, and the spin-coating time is 5-25 s.
Further preferably, the rotation speed of the mixed spin-coating liquid in the step 2 is 2000rpm, and the spin-coating time is 15 s.
Preferably, the rotation number of the Nafion aqueous solution spin coating in the step 2 is 2000-4000 rpm, and the spin coating time is 10-60 s.
Further preferably, the rotation number of the Nafion aqueous solution spin coating in the step 2 is 3500rpm, and the spin coating time is 40 s.
A PEDOT, PSS/Nafion composite film/GaAs-based heterojunction solar cell, comprises a back electrode, a GaAs substrate, a composite layer, a window layer and a front electrode which are arranged in sequence from bottom to top; the composite layer is a PEDOT/PSS/Nafion composite film prepared by the technology, the window layer is prepared on the periphery of the surface of the composite layer, the front electrode is prepared in the middle of the surface of the composite layer, and the front electrode is in contact with the window layer.
Preferably, the window layer is ZnO or SiN x 、SiO 2 Or Al 2 O 3 Any one of them.
Preferably, the back electrode is a single electrode of any one of gold, silver, titanium, copper, nickel, platinum, antimony tin oxide and aluminum-doped zinc oxide or a composite electrode consisting of two or more of the foregoing.
Preferably, the front electrode is a single electrode or a composite electrode consisting of more than two of gold, silver, titanium, copper, nickel, platinum, antimony tin oxide and aluminum-doped zinc oxide.
Further preferably, the front electrode is a silver front electrode, and when the front electrode is the silver front electrode, Nafion in the PEDOT: PSS/Nafion composite film/gallium arsenide-based heterojunction solar cell can react with silver to enable the composite layer to be tightly contacted with the electrode, so that the transmission efficiency of carriers is improved.
A preparation method of a PEDOT, PSS/Nafion composite film/gallium arsenide-based heterojunction solar cell comprises the following steps:
step one, evaporating a back electrode on one surface of a gallium arsenide substrate, and annealing to obtain a back electrode/gallium arsenide substrate;
step two, mixing a PEDOT PSS aqueous solution, an ethylene glycol solution and an isopropanol solution to obtain a mixed spin-coating solution, spin-coating the mixed spin-coating solution on the other surface of the GaAs substrate in the step one, then annealing, drying to form a film, then spin-coating a Nafion aqueous solution, and annealing to obtain a PEDOT PSS/Nafion composite film composite layer;
step three, preparing a window layer on the periphery of the surface of the composite layer in the step two;
and step four, preparing a front electrode in the middle of the surface of the composite layer in the step three, wherein the front electrode is also contacted with the window layer part, and obtaining the PEDOT-PSS/Nafion composite film/GaAs-based heterojunction solar cell.
Preferably, the gallium arsenide substrate is cleaned before and after the back electrode is prepared on the gallium arsenide substrate in the first step, and the cleaning process is as follows: sequentially carrying out ultrasonic cleaning by using an organic solvent and water, and drying by using nitrogen.
Further preferably, the organic solvent used in the cleaning process is acetone or ethanol.
Preferably, the mass fraction of the aqueous solution of PEDOT and PSS in the second step is 1.3% -1.7%.
Preferably, the mass fraction of the glycol solution in the second step is 5-9%.
Preferably, the mass fraction of the isopropanol solution in the second step is 0.1-0.3%.
PSS aqueous solution, ethylene glycol solution and isopropanol solution volume ratio of PEDOT in step two are preferably: 1-3: 1-3.
Preferably, the mass fraction of the Nafion aqueous solution in the second step is 3-7%.
Preferably, in the second step, the mixed spin-coating solution is centrifuged, and then the supernatant is spin-coated, wherein the rotation speed of the centrifugation is 1500-3000 rpm, and the centrifugation time is 1-20 min.
Preferably, the rotation number of the mixed spin-coating liquid in the second step is 1500-3000 rpm, and the spin-coating time is 5-25 s.
Preferably, the revolution number of the Nafion aqueous solution spin coating in the second step is 2000-4000 rpm, and the spin coating time is 10-60 s.
Compared with the prior art, the technical scheme of the invention has the beneficial effects that:
the PEDOT/PSS/Nafion composite film/gallium arsenide-based heterojunction solar cell provided by the invention contains a composite layer prepared from the PEDOT/PSS/Nafion composite film, can reduce the series resistance of a device, and quickens the speed of the PEDOT: and the current carrier separation and transportation of the PSS film and the semiconductor light absorption layer interface can obviously improve the photoelectric conversion efficiency of the device.
The PEDOT/PSS/Nafion composite film prepared by the invention has high light transmittance and excellent conductivity, and can obtain a heterojunction solar cell with higher open-circuit voltage and excellent conversion efficiency by combining with a solar cell prepared by a gallium arsenide substrate with direct band gap and wide forbidden band compared with a PEDOT/PSS/gallium arsenide-based solar cell or a PEDOT/PSS/silicon-based solar cell, and the photoelectric conversion efficiency is improved by 27.1-37.5%.
The PEDOT/PSS/Nafion composite film in the solar cell prepared by the invention not only plays a role of a composite layer, but also plays a role of passivation on a gallium arsenide substrate, improves the interface characteristic between the gallium arsenide substrate and the composite layer, reduces the recombination of current carriers at the interface, and further improves the performance of a semiconductor device.
When the front electrode in the solar cell is a silver front electrode, Nafion in the PEDOT/PSS/Nafion composite film reacts with silver, so that the composite layer is tightly contacted with the electrode, the transmission efficiency of carriers is improved, and the performance of a semiconductor device is improved.
Drawings
FIG. 1 is a schematic structural diagram of a PEDOT/PSS/Nafion composite film/GaAs-based heterojunction solar cell of the present invention, wherein 1, a back electrode; 2. a gallium arsenide substrate; 3. compounding layers; 4. a window layer; 5. and a front electrode.
FIG. 2 is a graph of current density versus voltage for the PEDOT/PSS/Nafion composite film/GaAs-based heterojunction solar cell of example 1.
Detailed Description
The invention is further described with reference to the drawings and the following detailed description, which are not intended to limit the invention in any way. Reagents, methods and apparatus used in the present invention are conventional in the art unless otherwise indicated.
Unless otherwise indicated, reagents and materials used in the following examples are commercially available.
A preparation method of a PEDOT, PSS/Nafion composite film/gallium arsenide-based heterojunction solar cell comprises the following steps:
firstly, ultrasonically cleaning a gallium arsenide substrate 2 by using an organic solvent and water in sequence, drying the gallium arsenide substrate by using nitrogen, preparing a back electrode 1 on one surface of the gallium arsenide substrate 2 by evaporation and annealing processes, ultrasonically cleaning the gallium arsenide substrate by using the organic solvent and water in sequence, and drying the gallium arsenide substrate by using the nitrogen for later use;
step two, mixing 5-9% of glycol solution and 0.1-0.3% of isopropanol solution to obtain mixed solution, and then dissolving 1.3-1.7% of PEDOT (polyethylene glycol terephthalate) and PSS (Poly (styrene-co-butylene terephthalate)) aqueous solution into the mixed solution to obtain spin-coating mixed solution, wherein the volume ratio of the PEDOT to the PSS aqueous solution, the glycol solution and the isopropanol solution is as follows: 1-3: 1-3, centrifuging the spin-coating mixed solution at the rotating speed of 1500-3000 rpm for 1-20 min, taking supernatant to spin-coat the other surface of the gallium arsenide substrate 2 at the rotating speed of 1500-3000 rpm for 5-25 s, annealing, drying to form a film, and then spin-coating a Nafion aqueous solution with the mass fraction of 3% -7% at the rotating speed of 2000-4000 rpm for 10-60 s to obtain a PEDOT: PSS/Nafion composite film with the thickness of 85-125 nm, namely a composite layer 3;
step three, preparing a window layer 4 on the periphery of the surface of the composite layer 3 in the step two;
and step four, preparing a front electrode 5 in the middle of the surface of the composite layer 3 in the step three, wherein the front electrode 5 is also partially contacted with the window layer 4, and obtaining the PEDOT, PSS/Nafion composite film/GaAs-based heterojunction solar cell.
Specifically, the window layer 4 is ZnO or SiN x 、SiO 2 Or Al 2 O 3 One kind of (1).
Specifically, the front electrode 5 is a single electrode or a composite electrode composed of two or more of gold, silver, titanium, copper, nickel, platinum, tin antimony oxide, and aluminum-doped zinc oxide.
Specifically, the back electrode 1 is a single electrode or a composite electrode composed of two or more of gold, silver, titanium, copper, nickel, platinum, tin antimony oxide, and aluminum-doped zinc oxide.
Example 1
A preparation method of a PEDOT, PSS/Nafion composite film/gallium arsenide-based heterojunction solar cell comprises the following steps:
firstly, carrying out ultrasonic cleaning on a gallium arsenide substrate 2 by using acetone and deionized water in sequence, drying the gallium arsenide substrate by using nitrogen, preparing a silver back electrode 1 on one surface of the gallium arsenide substrate 2 by evaporation and annealing processes to obtain a silver back electrode/gallium arsenide substrate, carrying out ultrasonic cleaning by using acetone and deionized water in sequence, and drying the gallium arsenide substrate by using nitrogen for later use;
step two, mixing a 7% ethylene glycol solution and a 0.2% isopropanol solution to obtain a mixed solution, and then dissolving a 1.5% PEDOT: PSS aqueous solution into the mixed solution to obtain a spin-coating mixed solution, wherein the volume ratio of the PEDOT: PSS aqueous solution to the ethylene glycol solution to the isopropanol solution is as follows: 1:1:1, centrifuging the spin-coating mixed solution at the rotating speed of 2000rpm for 15min, taking supernatant to spin-coat on the other surface of the gallium arsenide substrate 2 in the first step at the rotating speed of 2000rpm for 15s, annealing, drying to form a film, then spin-coating a Nafion aqueous solution with the mass fraction of 5% at the rotating speed of 3500rpm for 40s continuously, and then annealing to obtain a PEDOT: PSS/Nafion composite film with the thickness of 105nm, so as to form a composite layer 3;
step three, preparing a ZnO window layer 4 around the surface of the composite layer 3 in the step two;
and step four, preparing a silver front electrode 5 in the middle of the surface of the composite layer 3 in the step three through an evaporation and annealing process, wherein the silver front electrode 5 is also partially contacted with the ZnO window layer 4.
The PEDOT/PSS/Nafion composite film/GaAs-based heterojunction solar cell is prepared by the above process steps, and the structural schematic diagram is shown in figure 1.
The electrical properties of the PEDOT/PSS/Nafion composite film/GaAs-based heterojunction solar cell obtained in example 1 were tested, and the results are shown in FIG. 2, in which the short-circuit current density of the solar cell reached 9.55mA/cm 2 The open circuit voltage reaches 0.54V.
Example 2
A preparation method of a PEDOT, PSS/Nafion composite film/gallium arsenide-based heterojunction solar cell comprises the following steps:
firstly, ultrasonically cleaning a gallium arsenide substrate by using acetone and deionized water in sequence, drying the gallium arsenide substrate by using nitrogen, preparing a gold back electrode 1 on one surface of a gallium arsenide substrate 2 by evaporation and annealing processes to obtain a gold back electrode/gallium arsenide substrate, ultrasonically cleaning the gold back electrode/gallium arsenide substrate by using acetone and deionized water in sequence, and drying the gold back electrode/gallium arsenide substrate by using nitrogen for later use;
step two, mixing an ethylene glycol solution with the mass fraction of 5% and an isopropanol solution with the mass fraction of 0.3% to obtain a mixed solution, and then dissolving a PEDOT (polyethylene glycol terephthalate) PSS (PolyEthylene sulfonate) aqueous solution with the mass fraction of 1.3% into the mixed solution to obtain a spin-coating mixed solution, wherein the volume ratio of the PEDOT (polyethylene glycol terephthalate) PSS aqueous solution to the ethylene glycol solution to the isopropanol solution is as follows: 3:1:2, centrifuging the spin-coating mixed solution at the rotating speed of 1500rpm for 20min, taking supernatant to spin-coat on the other surface of the gallium arsenide substrate 2 at the rotating speed of 1500rpm for 25s, annealing, drying to form a film, then spin-coating a 7% Nafion aqueous solution at the rotating speed of 2000rpm for 60s, and annealing to obtain a 85nm PEDOT: PSS/Nafion composite film, so as to form a composite layer 3;
step three, preparing SiN on the periphery of the surface of the composite layer 3 in the step two x A window layer 4;
step four, preparing copper in the middle of the surface of the composite layer 3 in the step three through evaporation and annealing processesA front electrode 5, a copper front electrode 5 and SiN x The window layer 4 is partially in contact.
The PEDOT/PSS/Nafion composite film/GaAs-based heterojunction solar cell is prepared by the above process steps, and the structural schematic diagram is shown in figure 1.
Example 3
A preparation method of a PEDOT, PSS/Nafion composite film/gallium arsenide-based heterojunction solar cell comprises the following steps:
firstly, carrying out ultrasonic cleaning on a gallium arsenide substrate by using acetone and deionized water in sequence, drying the gallium arsenide substrate by using nitrogen, preparing a platinum back electrode 1 on one surface of the gallium arsenide substrate 2 by evaporation and annealing processes to obtain a platinum back electrode/gallium arsenide substrate, carrying out ultrasonic cleaning by using acetone and deionized water in sequence, and drying the gallium arsenide substrate by using nitrogen for later use;
step two, mixing 9% by mass of ethylene glycol solution with 0.1% by mass of isopropanol solution to obtain a mixed solution, and then dissolving 1.7% by mass of PEDOT (polyethylene glycol terephthalate) PSS (polyethylene glycol terephthalate) aqueous solution into the mixed solution to obtain a spin-coating mixed solution, wherein the volume ratio of the PEDOT (polyethylene glycol terephthalate) PSS aqueous solution to the ethylene glycol solution to the isopropanol solution is as follows: 2:2:3, centrifuging the spin-coating mixed solution for 1min at the rotating speed of 3000rpm, taking supernatant to spin-coat the other surface of the gallium arsenide substrate 2 at the rotating speed of 3000rpm for 5s, annealing, drying to form a film, then spin-coating a Nafion aqueous solution with the mass fraction of 3% at the rotating speed of 4000rpm for 10s, and annealing to obtain a 125nm PEDOT: PSS/Nafion composite film, so as to form a composite layer 3;
step three, preparing Al on the periphery of the surface of the composite layer 3 in the step two 2 O 3 A window layer 4;
step four, preparing the titanium front electrode 5 in the middle of the surface of the composite layer 3 in the step three through evaporation and annealing processes, wherein the titanium front electrode 5 is also connected with Al 2 O 3 The window layer 4 is partially in contact.
The PEDOT/PSS/Nafion composite film/GaAs-based heterojunction solar cell is prepared by the above process steps, and the structural schematic diagram is shown in figure 1.
Comparative example 1
Comparative example 1 was prepared under similar conditions to example 1 except that the composite layer 3 was PEDOT: PSS.
Comparative example 2
Comparative example 2 was prepared under similar conditions to example 1 except that the gallium arsenide substrate 2 was changed to a silicon substrate.
Comparative examples 3 to 6
The preparation conditions of comparative examples 3 to 6 were similar to those of example 1, except that the spin-coating rotation speed and the spin-coating time of the spin-coating mixture and Nafion aqueous solution of step two were controlled to obtain composite layers having thicknesses of 53nm, 68nm, 145nm and 162nm, respectively.
Performance test
The electrical properties of the solar cells obtained in examples 1 to 3 and comparative examples 1 to 6 were measured, and the results are shown in table 1.
TABLE 1 Electrical Properties of examples 1-3 and comparative examples 1-6 solar cells
Figure BDA0003606655240000091
From table 1, it can be seen that:
compared with the solar cells in the comparative proportions of 1-2, the solar cells obtained in the embodiments 1-3 have higher open-circuit voltage and short-circuit current density, and the photoelectric conversion efficiency is improved by 27.1% -37.5%.
And in the comparative examples 3-6, the thicknesses of the obtained PEDOT/PSS/Nafion composite film composite layers are respectively 53nm, 68nm, 145nm and 162nm by adjusting the spin-coating speed and the spin-coating time in the second step, so that the photoelectric conversion efficiency of the obtained solar cell is poor and can reach less than 6%, which shows that the thickness of the PEDOT/PSS/Nafion composite film composite layers is one of important conditions influencing the solar cell, and the thickness of the PEDOT/PSS/Nafion composite film composite layers is influenced by the spin-coating speed, the spin-coating time and other process conditions of the mixed spin-coating liquid and Nafion water solution.
It should be understood that the above-described embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the claims of the present invention.

Claims (10)

1. The PEDOT/PSS/Nafion composite film is characterized by comprising the following steps:
step 1, mixing PEDOT, namely a PSS aqueous solution, an ethylene glycol solution and an isopropanol solution to obtain a mixed spin-on solution;
and 2, spin-coating the mixed spin-coating liquid on one surface of the cleaned substrate, then annealing, drying to form a film, then spin-coating a Nafion aqueous solution, and annealing to obtain the composite layer of the PEDOT, PSS/Nafion composite film.
2. The PEDOT, PSS/Nafion composite film according to claim 1, wherein the thickness of the PEDOT, PSS/Nafion composite film is 85-125 nm.
3. The PEDOT/PSS/Nafion composite film according to claim 1, wherein the mass fraction of the aqueous solution of PEDOT/PSS in step 1 is 1.3% -1.7%, the mass fraction of the ethylene glycol solution is 5% -9%, the mass fraction of the isopropanol solution is 0.1% -0.3%, and the volume ratio of the aqueous solution of PEDOT/PSS, the ethylene glycol solution and the isopropanol solution is as follows: 1-3: 1-3, wherein the mass fraction of the Nafion aqueous solution in the step 2 is 3% -7%.
4. The PEDOT/PSS/Nafion composite film according to claim 1, wherein the mixed spin-coating solution is centrifuged in the step 2, the supernatant is taken for spin-coating, the rotation speed of the centrifugation is 1500-3000 rpm, and the centrifugation time is 1-20 min.
5. The PEDOT/PSS/Nafion composite film according to claim 1, wherein the rotation number of the mixed spin-coating liquid in the step 2 is 1500-3000 rpm, and the spin-coating time is 5-25 s; the revolution number of the Nafion water solution spin coating is 2000-4000 rpm, and the spin coating time is 10-60 s.
6. A PEDOT/PSS/Nafion composite film/GaAs-based heterojunction solar cell is characterized by comprising a back electrode (1), a GaAs substrate (2), a composite layer (3), a window layer (4) and a front electrode (5) which are sequentially arranged from bottom to top; the composite layer (3) is the PEDOT/PSS/Nafion composite film as claimed in any one of claims 1 to 5, the window layer (4) is prepared on the periphery of the surface of the composite layer (3), the front electrode (5) is prepared in the middle of the surface of the composite layer (3), and the front electrode (5) is partially contacted with the window layer (4).
7. PSS/Nafion composite film/GaAs based heterojunction solar cell according to claim 6, wherein said window layer (4) is ZnO, SiN x 、SiO 2 Or Al 2 O 3 Any one of them.
8. The PEDOT/PSS/Nafion composite film/GaAs-based heterojunction solar cell according to claim 6, wherein the back electrode (1) and the front electrode (5) are single electrodes of any one or more of gold, silver, titanium, copper, nickel, platinum, antimony tin oxide, aluminum-doped zinc oxide, preferably the front electrode (5) is a silver front electrode.
9. The preparation method of the PEDOT/PSS/Nafion composite film/GaAs-based heterojunction solar cell as claimed in any one of claims 6 to 8, which is characterized by comprising the following steps:
step one, evaporating a back electrode (1) on one surface of a gallium arsenide substrate (2), and annealing to obtain a back electrode/gallium arsenide substrate;
step two, mixing a PEDOT PSS aqueous solution, an ethylene glycol solution and an isopropanol solution to obtain a mixed spin-coating solution, spin-coating the mixed spin-coating solution on the other surface of the GaAs substrate (2) in the step one, then annealing, drying to form a film, then spin-coating a Nafion aqueous solution, and annealing to obtain a PEDOT PSS/Nafion composite film composite layer (3);
step three, preparing a window layer (4) on the periphery of the surface of the composite layer (3) in the step two;
and step four, preparing a front electrode (5) in the middle of the surface of the composite layer (3) in the step three, wherein the front electrode (5) is also partially contacted with the window layer (4), and obtaining the PEDOT/PSS/Nafion composite film/GaAs-based heterojunction solar cell.
10. The preparation method of the PEDOT/PSS/Nafion composite film/GaAs-based heterojunction solar cell as claimed in claim 9, wherein the mass fraction of the aqueous solution of the PEDOT/PSS in the second step is 1.3% -1.7%, the mass fraction of the ethylene glycol solution is 5% -9%, the mass fraction of the isopropanol solution is 0.1% -0.3%, and the volume ratio of the aqueous solution of the PEDOT/PSS, the ethylene glycol solution and the isopropanol solution is as follows: 1-3: 1-3, wherein the mass fraction of the Nafion aqueous solution is 3% -7%.
CN202210417733.XA 2022-04-20 2022-04-20 PEDOT (Poly ethylene terephthalate): PSS (Poly styrene)/Nafion composite film, gallium arsenide-based heterojunction solar cell and preparation method thereof Pending CN114824091A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117219705A (en) * 2023-11-08 2023-12-12 华南理工大学 Flexible gallium arsenide solar cell and preparation method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117219705A (en) * 2023-11-08 2023-12-12 华南理工大学 Flexible gallium arsenide solar cell and preparation method thereof

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