CN114823996A - LED chip transfer method and display panel - Google Patents
LED chip transfer method and display panel Download PDFInfo
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- CN114823996A CN114823996A CN202210500659.8A CN202210500659A CN114823996A CN 114823996 A CN114823996 A CN 114823996A CN 202210500659 A CN202210500659 A CN 202210500659A CN 114823996 A CN114823996 A CN 114823996A
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- 239000002184 metal Substances 0.000 claims abstract description 29
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- 238000010030 laminating Methods 0.000 claims abstract description 6
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- 230000001678 irradiating effect Effects 0.000 claims description 3
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- 238000007723 die pressing method Methods 0.000 abstract 1
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- 229910000679 solder Inorganic materials 0.000 description 4
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
The invention discloses a transfer method of LED chips and a display panel, wherein the transfer method comprises the steps of providing a positioning substrate, arranging a stripping glue layer on the positioning substrate, and transferring and adhering the same type of LED chips on a carrier substrate to the positioning substrate through the stripping glue layer; forming a pressure adhesive film layer on the stripping adhesive layer and the LED chip, and forming a pressing integrated structure by the pressure adhesive film layer and the LED chip together by adopting a mould pressing process; and then stripping off the stripping glue layer, correspondingly laminating the press-fit integrated structure with the driving substrate, binding and welding the LED chip and the corresponding metal bonding pad by adopting a die pressing process, realizing accurate positioning of the LED chip, and being beneficial to improving the yield.
Description
Technical Field
The invention relates to the technical field of display, in particular to a transfer method of an LED chip and a display panel.
Background
Micro-light emitting diode (Micro-LED) chips or Mini-LED chips are transfer-welded to a driving substrate through a bulk transfer process, and multiple transfers are involved in the whole bulk transfer welding process of the LED chips.
Disclosure of Invention
The embodiment of the invention provides a transfer method of an LED chip and a display panel, and aims to solve the technical problems of large-scale insufficient soldering phenomenon and low transfer efficiency and yield of the conventional transfer method of the LED chip.
In order to solve the problems, the technical scheme provided by the invention is as follows:
the invention provides a transfer method of an LED chip, which comprises the following steps:
s1: providing a carrier substrate, wherein a plurality of LED chips of the same type are arranged on the carrier substrate;
s2: providing a positioning substrate, wherein a stripping adhesive layer is arranged on the positioning substrate, at least part of the LED chip is transferred onto the positioning substrate, and the LED chip is adhered to the positioning substrate through the stripping adhesive layer;
s3: forming a pressure adhesive film layer covering the stripping adhesive layer and the LED chip, and forming a pressing integrated structure by adopting a mould pressing process;
s4: peeling off the peeling adhesive layer to separate the pressing integrated structure from the positioning substrate and the peeling adhesive layer;
s5: providing a driving substrate, arranging a plurality of metal bonding pads on the driving substrate, aligning and attaching the pressing integrated structure and the driving substrate, and bonding and welding a plurality of LED chips and the corresponding metal bonding pads by adopting a mould pressing process; and
s6: peeling off the adhesive film layer to separate the plurality of LED chips from the adhesive film layer;
s7: repeating the steps S1 to S6, and sequentially transferring the LED chips of different types on the different carrier substrates or the LED chip of the same type on the same carrier substrate to the same driving substrate.
According to the transfer method of the LED chip provided by the invention, the material of the adhesive pressing film layer is a semi-dry adhesive film;
the step S3 includes the steps of:
attaching the adhesive film laminating layer to one side of the LED chip far away from the positioning substrate; and
and providing a first pressing mechanism, and applying pressure to one side of the first pressing mechanism, which is far away from the positioning substrate, so that the LED chip is wrapped by the adhesive film layer.
According to the LED chip transfer method provided by the invention, the material of the stripping glue layer comprises ultraviolet glue.
According to the transfer method of the LED chip provided by the present invention, the step S4 includes the following steps:
irradiating the stripping adhesive layer on one side of the positioning substrate far away from the pressing integrated structure by adopting an ultraviolet light source so as to reduce the viscosity of the stripping adhesive layer;
tearing off the pressing integrated structure and the stripping adhesive layer from the positioning substrate; and
and peeling off the peeling glue layer from the bottom of the pressing integrated structure.
According to the transfer method of the LED chip, provided by the invention, the positioning substrate is a transparent glass substrate.
According to the transferring method of the LED chip provided by the present invention, the step S5 further includes the following steps:
providing a second pressing mechanism, and applying pressure on one side of the second pressing mechanism, which is far away from the driving substrate;
heating the side, far away from the LED chip, of the driving substrate; and
and bonding and welding the LED chip and the corresponding metal bonding pad.
According to the transfer method of the LED chip provided by the present invention, after each type of the LED chip is transferred to the driving substrate, a lighting test is performed on the LED chip that has been transferred onto the driving substrate.
According to the transfer method of the LED chips provided by the invention, the LED chips of various types comprise a red LED chip for emitting red light, a green LED chip for emitting green light and a blue LED chip for emitting blue light.
According to the transfer method of the LED chip provided by the invention, the specification of the positioning substrate is the same as that of the driving substrate; the positioning substrate comprises a plurality of positioning grids, and the LED chips are transferred into the corresponding positioning grids.
The invention provides a display panel which is prepared and formed by adopting the transfer method.
The invention has the beneficial effects that: according to the LED chip transfer method and the display panel, provided by the invention, the LED chips of the same type on the carrier substrate are transferred and adhered to the positioning substrate through the stripping glue layer by providing the positioning substrate and arranging the stripping glue layer on the positioning substrate; forming a pressure adhesive film layer on the stripping adhesive layer and the LED chip, and forming a pressing integrated structure by the pressure adhesive film layer and the LED chip together by adopting a mould pressing process; the stripping glue layer is stripped, the pressing integrated structure is correspondingly attached to the driving substrate, the LED chip and the corresponding metal bonding pad are bound and welded by adopting a mould pressing process, the LED chip can be accurately positioned before the reflow soldering process is adopted due to the fact that the positioning substrate and the driving substrate are identical in specification, the LED chip is pressurized and forcibly positioned during welding, the rosin joint proportion of the LED chip can be reduced, and the yield is improved; in addition, different positioning substrates can be adopted to accurately position and sort multiple different types/the same type of LED chips simultaneously and then transfer the LED chips to the same driving substrate, and the transfer efficiency is improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a flowchart of a transfer method of an LED chip according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a process of transferring the same type of LED chips onto a driving substrate in the transferring method provided by the embodiment of the present invention;
fig. 3 is a schematic view of a flow structure for transferring a blue LED chip onto a driving substrate according to an embodiment of the present invention;
fig. 4 is a schematic view of a flow structure for transferring a green LED chip onto a driving substrate according to an embodiment of the present invention;
fig. 5 is a schematic view of a flow structure for transferring the red LED chip to the driving substrate according to an embodiment of the present invention.
Description of reference numerals:
100. a carrier substrate; 101. an LED chip; 102. positioning the substrate; 103. stripping the adhesive layer; 104. laminating a glue film layer; 105. pressing an integrated structure; 106. a drive substrate; 107. a metal pad; 108. a first pressing mechanism; 1081. an opening; 109. a second pressing mechanism;
10. a first carrier substrate; 11. a blue LED chip; 12. a first positioning substrate; 13. a first release liner; 14. a first adhesive film lamination layer; 15. a first press-fit integrated structure; 16. a drive substrate; 17. a first metal pad;
20. a second carrier substrate; 21. a green LED chip; 22. a second positioning substrate; 23. a second stripping glue layer; 24. a second adhesive film lamination layer; 25. a second press-fit integrated structure; 26. a second metal pad;
30. a third carrier substrate; 31. a red LED chip; 32. a third positioning substrate; 33. a third stripping glue layer; 34. a third adhesive film lamination layer; 35. a third pressing integrated structure; 36. and a third metal pad.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention. Furthermore, it should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, and are not intended to limit the present invention. In the present invention, unless otherwise specified, the use of directional terms such as "upper" and "lower" generally means upper and lower in the actual use or operation of the device, particularly in the orientation of the figures of the drawings; while "inner" and "outer" are with respect to the outline of the device.
In view of the above technical problems in the related art, one or more embodiments of the present disclosure provide a transfer scheme for LED chips, in which a positioning substrate is provided, and a peeling layer is disposed on the positioning substrate, so that LED chips of the same type on a carrier substrate are transferred and adhered to the positioning substrate through the peeling layer; forming a pressure adhesive film layer on the stripping adhesive layer and the LED chip, and forming a pressing integrated structure by the pressure adhesive film layer and the LED chip together by adopting a mould pressing process; the stripping glue layer is stripped, the pressing integrated structure is correspondingly attached to the driving substrate, the LED chip and the corresponding metal bonding pad are bound and welded by adopting a mould pressing process, the LED chip can be accurately positioned before the reflow soldering process is adopted due to the fact that the positioning substrate and the driving substrate are identical in specification, the LED chip is pressurized and forcibly positioned during welding, the rosin joint proportion of the LED chip can be reduced, and the yield is improved; in addition, different positioning substrates can be adopted to accurately position and sort multiple different types/the same type of LED chips simultaneously and then transfer the LED chips to the same driving substrate, and the transfer efficiency is improved.
The technical means of the present invention will be described in further detail below with reference to specific examples.
Referring to fig. 1 and fig. 2, fig. 1 is a flowchart of a transfer method of an LED chip according to an embodiment of the present invention, and fig. 2 is a schematic structural diagram of a flow of transferring the same type of LED chip onto a driving substrate according to the transfer method of the present invention. The embodiment of the invention provides a transfer method of an LED chip, which comprises the following steps:
s1: a carrier substrate 100 is provided, and a plurality of LED chips 101 of the same type are disposed on the carrier substrate 100.
Generally, a panel manufacturer transfers a plurality of LED chips 101 of different types to different carrier substrates 100 before transferring a large number of chips, and because a single LED chip 101 has a small size, if a die bonder selects the same type of LED chip 101 on the carrier substrate 100 provided with the plurality of different types of LED chips 101, the operation difficulty is high, therefore, the carrier substrate 100 of the present invention is provided with a plurality of LED chips 101 of the same type, the die bonder does not need to perform the selection operation, and is convenient for accurately transferring the small-sized LED chip 101 from the carrier substrate 100 to the positioning substrate 102, and the operation is simple, which is beneficial to improving the production efficiency.
Here, the LED chips 101 of the same type are the LED chips 101 having the same light emission color, and the LED chips 101 of different types are the LED chips 101 having different light emission colors.
S2: providing a positioning substrate 102, arranging a stripping glue layer 103 on the positioning substrate 102, transferring at least part of the same type of the LED chips 101 onto the positioning substrate 102, and adhering the LED chips 101 to the positioning substrate 102 through the stripping glue layer 103.
Specifically, the material of the release liner 103 may be a photolytic adhesive, a thermal release adhesive or a polymer material, wherein the photolytic adhesive is degraded or decomposed by laser or ultraviolet radiation, and the thermal release adhesive is degraded or decomposed by heating. In order to avoid the influence of high temperature, the transfer method provided in the embodiment of the present invention is performed under a low temperature condition, and therefore, in the embodiment of the present invention, the material of the release glue layer 103 is photolytic glue, and optionally, the material of the release glue layer 103 is ultraviolet glue, and the viscosity of the ultraviolet glue is reduced when the ultraviolet glue is irradiated by ultraviolet light.
Alternatively, the release glue layer 103 may be coated on the positioning substrate 102 by at least one of chemical vapor deposition, plasma enhanced chemical vapor deposition, evaporation, or spin coating.
Specifically, the LED chip 101 on the carrier substrate 100 is adsorbed by a mechanical arm of a die bonder, and then the LED chip 101 is placed at a suitable preset position on the positioning substrate 102, it can be understood that the specification of the positioning substrate 102 is the same as that of the driving substrate 106, so that when the LED chip 101 is transferred from the positioning substrate 102 to the driving substrate 106, no offset occurs between the LED chip 101 and the preset corresponding position, and the accurate positioning of the LED chip 101 can be realized, so that the proportion of the insufficient solder joints of the LED chip 101 can be greatly reduced, and the yield can be improved.
Further, a plurality of positioning grids are provided on the positioning substrate 102, the LED chips 101 are transferred into the corresponding positioning grids, and similarly, a plurality of positioning grids are also provided on the driving substrate 106, the metal pads 107 on the driving substrate 106 are located in the corresponding positioning grids, and the positioning grids on the positioning substrate 102 and the positioning grids on the driving substrate 106 have the same specification. Wherein one of the LED chips 101 corresponds to one of the positioning grids. The positioning grid may be a grid of metal wires.
Specifically, the positioning substrate 102 is a hard substrate such as a transparent glass substrate, and further, the positioning substrate 102 is a transparent tempered glass substrate. Compared with a metal substrate, the glass substrate is not easy to expand with heat and contract with cold, so that the glass substrate is not easy to tilt and deform under the conditions of pressure and high temperature, the specification of the positioning substrate 102 and the specification of the driving substrate 106 are always kept in the same state, and the accurate positioning of the LED chip 101 is guaranteed.
S3: and forming a pressure adhesive film layer 104 covering the stripping adhesive layer 103 and the LED chip 101, wherein the pressure adhesive film layer 104 and the LED chip 101 form a pressing integrated structure 105 by adopting a mould pressing process.
Specifically, the step S3 includes the steps of:
attaching the adhesive film lamination layer 104 to one side of the LED chip 101 away from the positioning substrate 102; and
providing a first pressing mechanism 108, and applying pressure on a side of the first pressing mechanism 108 away from the positioning substrate 102, so that the adhesive film layer 104 wraps the LED chip 101.
Specifically, a formed adhesive film layer 104 may be directly placed and attached on a side of the LED chip 101 away from the positioning substrate 102, or the adhesive film layer 104 may be directly formed on the LED chip 101 through a coating process or the like. The material of the adhesive film layer 104 is a semi-dry adhesive film, optionally, the material of the adhesive film layer 104 includes a phenyl-based silicone, the semi-dry adhesive film is between a completely cured state and an uncured state, that is, the adhesive film layer 104 is between a liquid state and a solid state, and has a certain fluidity and a deformation capability, then, the LED chip 101 can be embedded into the adhesive film layer 104 by using a mold pressing process, so that the adhesive film layer 104 wraps the LED chip 101, and the adhesive film layer 104 and the LED chip 101 form a press-fit integrated structure 105, therefore, the viscosity between the adhesive film layer 104 and the LED chip 101 is improved, and preparation is made for subsequently peeling the peeling adhesive layer 103.
Specifically, the first pressing mechanism 108 is disposed on a side of the pressing integrated structure 105 away from the positioning substrate 102, and the pressing integrated structure 105 is disposed in an accommodating space formed by the first pressing mechanism 108. The first pressing mechanism 108 includes an opening 1081, and when pressure is applied to the first pressing mechanism 108, the adhesive film layer 104 is pressed to flow out of the opening 1081.
S4: and stripping the stripping adhesive layer 103, so that the integrated pressing structure 105 is separated from the positioning substrate 102 and the stripping adhesive layer 103.
Specifically, the step S4 includes the steps of:
irradiating the stripping glue layer 103 on one side of the positioning substrate 102 far away from the pressing integrated structure 105 by adopting an ultraviolet light source so as to reduce the viscosity of the stripping glue layer 103;
removing the integrated pressing structure 105 and the release adhesive layer 103 from the positioning substrate 102; and
the release liner 103 is peeled away from the bottom of the bonded integrated structure 105.
S5: providing a driving substrate 106, arranging a plurality of metal bonding pads 107 on the driving substrate 106, aligning and attaching the pressing integrated structure 105 and the driving substrate 106, and bonding and welding a plurality of LED chips 101 and the corresponding metal bonding pads 107 by adopting a molding process.
It should be noted that a solder paste is disposed on a side of the metal pad 107 away from the driving substrate 106, and is used for binding the metal pad 107 and the LED chip 101, and before the pressing and bonding integrated structure 105 and the driving substrate 106 are aligned and attached, a pre-soldering process needs to be performed on the driving substrate 106, specifically, a heating process is performed on the bottom of the driving substrate 106 to cure the liquid solder paste, so as to avoid a situation that the liquid solder paste is extruded and flows out when the LED chip 101 is pressed downward to contact the metal pad 107 by using a molding process.
Specifically, the step S5 further includes the following steps:
providing a second pressing mechanism 109, and applying pressure on a side of the second pressing mechanism 109 away from the driving substrate 106;
heating the side of the driving substrate 106 away from the LED chip 101; and
and bonding the LED chip 101 and the corresponding metal pad 107.
Specifically, in this step, the heat-treated laminate film layer 104 is changed from the "half-dry" state to the "full-dry" state, facilitating peeling off the laminate film layer 104 in a subsequent step.
Specifically, the second stitching mechanism 109 and the first stitching mechanism 108 may have the same structure.
S6: the adhesive film layer 104 is peeled off, so that the plurality of LED chips are separated from the adhesive film layer 104.
It should be noted that the LED chips 101 of different types include a blue LED chip 11 emitting blue light, a green LED chip 21 emitting green light, and a red LED chip 31 emitting red light. The blue LED chip 11, the green LED chip 21 and the red LED chip 31 can respectively transfer the corresponding three different types of LED chips 101 to the positioning substrate 102 in sequence according to any sequence of the three sequences.
For example, in the embodiment of the present invention, the blue LED chip 11 is transferred to the driving substrate 106, the green LED chip 21 is transferred to the driving substrate 106, and the red LED chip 31 is transferred to the driving substrate 106.
Specifically, referring to fig. 3, fig. 3 is a schematic view of a flow structure for transferring a blue LED chip onto a driving substrate according to an embodiment of the present invention. Transferring the blue LED chip 11 onto the driving substrate 106 without any LED chip 101, specifically comprising the following steps:
providing a first carrier substrate 10, wherein a plurality of blue light LED chips 11 are arranged on the first carrier substrate 10;
providing a first positioning substrate 12, arranging a first stripping adhesive layer 13 on the first positioning substrate 12, transferring at least part of the blue light LED chip 11 onto the first positioning substrate 12, and adhering the blue light LED chip 11 onto the first positioning substrate 12 through the first stripping adhesive layer 13;
forming a first adhesive film laminating layer 14 covering the first stripping adhesive layer 13 and the blue light LED chip 11, and forming a first pressing integrated structure 15 on the first adhesive film laminating layer 14 and the blue light LED chip 11 by adopting a mould pressing process;
peeling off the first release adhesive layer 13, so that the first press-fit integrated structure 15 is separated from the first positioning substrate 102 and the first release adhesive layer 103;
aligning and attaching the first pressing integrated structure 15 and the driving substrate 106 provided with a plurality of first metal bonding pads 17, and bonding and welding a plurality of blue light LED chips 11 and the corresponding first metal bonding pads 17 by adopting a mould pressing process; and
the first adhesive film layer 14 is peeled off, so that the plurality of blue LED chips 11 are separated from the first adhesive film layer 14.
S7: repeating the steps S1 to S6, and sequentially transferring the LED chips 101 of different types on different carrier substrates 100 or the LED chips 101 of the same type on the same carrier substrate 100 to the same driving substrate 106.
Specifically, referring to fig. 4, fig. 4 is a schematic view of a flow structure for transferring a green LED chip onto a driving substrate according to an embodiment of the present invention. Firstly, the green LED chip 21 is transferred to the driving substrate 106 to which the blue LED chip 11 is bonded, which specifically includes the following steps:
providing a second carrier substrate 20, wherein a plurality of green LED chips 21 are disposed on the second carrier substrate 20;
providing a second positioning substrate 22, arranging a second stripping glue layer 23 on the second positioning substrate 22, transferring at least part of the green LED chips 21 onto the second positioning substrate 22, and adhering the green LED chips 21 onto the second positioning substrate 22 through the second stripping glue layer 23;
forming a second adhesive pressing film layer 24 covering the second stripping adhesive layer 23 and the green LED chip 21, and forming a second pressing integrated structure 25 by the second adhesive pressing film layer 24 and the green LED chip 21 by adopting a mould pressing process;
peeling off the second release adhesive layer 23, so that the second pressing integrated structure 25 is separated from the second positioning substrate 22 and the second release adhesive layer 23;
aligning and attaching the second pressing integrated structure 25 and the driving substrate 106 bound with the blue light LED chip 11, wherein a plurality of second metal bonding pads 26 are arranged on the driving substrate 106, and bonding and welding a plurality of green light LED chips 21 and the corresponding second metal bonding pads 26 by adopting a mould pressing process; and
the second lamination film layer 24 is peeled off so that the plurality of green LED chips 21 are separated from the second lamination film layer 24.
It should be noted that the specific details of the transfer process for the green LED chip 21 are similar to those of the blue LED chip 11 in the above embodiment, and reference is made to the above description for details, and details are not described herein.
Next, referring to fig. 5, fig. 5 is a schematic view of a flow structure for transferring the red LED chip onto the driving substrate according to the embodiment of the present invention. Transferring the red LED chip 31 to the driving substrate 106 bound with the blue LED chip 11 and the green LED chip 21, specifically comprising the following steps:
providing a third carrier substrate 30, wherein a plurality of red LED chips 31 are disposed on the third carrier substrate 30;
providing a third positioning substrate 32, disposing a third release adhesive layer 33 on the third positioning substrate 32, transferring at least a part of the red LED chip 31 onto the third positioning substrate 32, and adhering the red LED chip 31 onto the third positioning substrate 32 through the third release adhesive layer 33;
forming a third adhesive pressing film layer 34 covering the third stripping adhesive layer 33 and the red LED chip 31, and forming a third pressing integrated structure 35 by the third adhesive pressing film layer 34 and the red LED chip 31 by adopting a mould pressing process;
peeling off the third release adhesive layer 33, so that the third press-fit integrated structure 35 is separated from the third positioning substrate 32 and the third release adhesive layer 33;
aligning and attaching the third press-fit integrated structure 35 to the driving substrate 106, wherein the driving substrate 106 is provided with a plurality of blue LED chips 11, a plurality of green LED chips 21 and a plurality of third metal bonding pads 36, and bonding and welding the plurality of red LED chips 31 and the corresponding third metal bonding pads 36 by using a mold pressing process; and
peeling off the third adhesive film layer 34 so that the plurality of red LED chips 31 are separated from the third adhesive film layer 34.
Likewise, the specific details of the transferring process for the red LED chip 31 are similar to those of the transferring process for the blue LED chip 11 in the above embodiments, and the above description is specifically referred to, and will not be described in detail here.
It can be understood that, for the transferring process of different types of LED chips 101, since the steps S1 to S4 respectively use different carrier substrates 100 and different positioning substrates 102, the LED chips 101 of different types can be simultaneously and precisely positioned and sorted and then transferred to the same driving substrate 106, which is beneficial to improving the transferring efficiency. Further, for a plurality of LED chips 101 on the same carrier substrate 100, different positioning substrates 102 may be used for accurate positioning and sorting and then transferring, which is beneficial to further improving the transferring efficiency.
Further, after each type of the LED chip 101 is transferred to the driving substrate 106, a lighting test is performed on the LED chip 101 that has been transferred to the driving substrate 106, and the LED chip 101 that is defective is repaired or replaced at that time, which is advantageous for cost saving.
Based on the same inventive concept, the invention also provides a display panel which is manufactured by adopting the transfer method.
The beneficial effects are that: according to the LED chip transfer method and the display panel, provided by the invention, the LED chips of the same type on the carrier substrate are transferred and adhered to the positioning substrate through the stripping glue layer by providing the positioning substrate and arranging the stripping glue layer on the positioning substrate; forming a pressure adhesive film layer on the stripping adhesive layer and the LED chip, and forming a pressing integrated structure by the pressure adhesive film layer and the LED chip together by adopting a mould pressing process; the stripping glue layer is stripped, the pressing integrated structure is correspondingly attached to the driving substrate, the LED chip and the corresponding metal bonding pad are bound and welded by adopting a mould pressing process, the LED chip can be accurately positioned before the reflow soldering process is adopted due to the fact that the positioning substrate and the driving substrate are identical in specification, the LED chip is pressurized and forcibly positioned during welding, the rosin joint proportion of the LED chip can be reduced, and the yield is improved; in addition, different positioning substrates can be adopted to accurately position and sort multiple different types/the same type of LED chips simultaneously and then transfer the LED chips to the same driving substrate, and the transfer efficiency is improved.
In summary, although the present invention has been described with reference to the preferred embodiments, the above-described preferred embodiments are not intended to limit the present invention, and those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention, therefore, the scope of the present invention shall be determined by the appended claims.
Claims (10)
1. A method for transferring LED chips is characterized by comprising the following steps:
s1: providing a carrier substrate, wherein a plurality of LED chips of the same type are arranged on the carrier substrate;
s2: providing a positioning substrate, wherein a stripping adhesive layer is arranged on the positioning substrate, at least part of the LED chip is transferred onto the positioning substrate, and the LED chip is adhered to the positioning substrate through the stripping adhesive layer;
s3: forming a pressure adhesive film layer covering the stripping adhesive layer and the LED chip, and forming a pressing integrated structure by adopting a mould pressing process;
s4: stripping the stripping adhesive layer to separate the pressing integrated structure from the positioning substrate and the stripping adhesive layer;
s5: providing a driving substrate, arranging a plurality of metal bonding pads on the driving substrate, aligning and attaching the pressing integrated structure and the driving substrate, and bonding and welding a plurality of LED chips and the corresponding metal bonding pads by adopting a mould pressing process; and
s6: peeling off the adhesive film layer to separate the plurality of LED chips from the adhesive film layer;
s7: repeating the steps S1-S6, and transferring the LED chips of different types on different carrier substrates or the LED chips of the same type on the same carrier substrate to the same driving substrate in sequence.
2. The method for transferring the LED chip according to claim 1, wherein the material of the adhesive film layer is a semi-dry adhesive film;
the step S3 includes the steps of:
attaching the adhesive film laminating layer to one side of the LED chip, which is far away from the positioning substrate; and
and providing a first pressing mechanism, and applying pressure to one side of the first pressing mechanism, which is far away from the positioning substrate, so that the LED chip is wrapped by the adhesive film layer.
3. The method of claim 2, wherein the material of the release adhesive layer comprises an ultraviolet adhesive.
4. The method for transferring LED chips according to claim 3, wherein said step S4 comprises the steps of:
irradiating the stripping adhesive layer on one side of the positioning substrate far away from the pressing integrated structure by adopting an ultraviolet light source so as to reduce the viscosity of the stripping adhesive layer;
tearing off the pressing integrated structure and the stripping adhesive layer from the positioning substrate; and
and peeling off the peeling glue layer from the bottom of the pressing integrated structure.
5. The method according to claim 4, wherein the positioning substrate is a transparent glass substrate.
6. The method for transferring LED chips according to claim 1, wherein said step S5 further comprises the steps of:
providing a second pressing mechanism, and applying pressure on one side of the second pressing mechanism, which is far away from the driving substrate;
heating the side, far away from the LED chip, of the driving substrate; and
and bonding and welding the LED chip and the corresponding metal bonding pad.
7. The method according to claim 1, wherein a lighting test is performed on the LED chips that have been transferred onto the driving substrate after each type of the LED chips is transferred onto the driving substrate.
8. The method according to claim 1, wherein the plurality of types of LED chips include a red LED chip emitting red light, a green LED chip emitting green light, and a blue LED chip emitting blue light.
9. The method according to claim 1, wherein the positioning substrate has the same specification as the driving substrate; the positioning substrate comprises a plurality of positioning grids, and the LED chips are transferred into the corresponding positioning grids.
10. A display panel produced by the transfer method according to any one of claims 1 to 9.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115207186A (en) * | 2022-09-15 | 2022-10-18 | 江西兆驰半导体有限公司 | Mini-LED chip and preparation method thereof |
| CN116487489A (en) * | 2023-06-25 | 2023-07-25 | 江西兆驰半导体有限公司 | Huge transfer method of Micro-LED chip |
| WO2024066430A1 (en) * | 2022-09-29 | 2024-04-04 | 惠科股份有限公司 | Led chip transfer method and display panel |
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2022
- 2022-05-09 CN CN202210500659.8A patent/CN114823996A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115207186A (en) * | 2022-09-15 | 2022-10-18 | 江西兆驰半导体有限公司 | Mini-LED chip and preparation method thereof |
| WO2024066430A1 (en) * | 2022-09-29 | 2024-04-04 | 惠科股份有限公司 | Led chip transfer method and display panel |
| CN116487489A (en) * | 2023-06-25 | 2023-07-25 | 江西兆驰半导体有限公司 | Huge transfer method of Micro-LED chip |
| CN116487489B (en) * | 2023-06-25 | 2023-10-20 | 江西兆驰半导体有限公司 | Huge transfer method of Micro-LED chip |
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