CN114822979A - High-conductivity wire and preparation method thereof - Google Patents
High-conductivity wire and preparation method thereof Download PDFInfo
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- CN114822979A CN114822979A CN202210581510.7A CN202210581510A CN114822979A CN 114822979 A CN114822979 A CN 114822979A CN 202210581510 A CN202210581510 A CN 202210581510A CN 114822979 A CN114822979 A CN 114822979A
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- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B12/00—Superconductive or hyperconductive conductors, cables, or transmission lines
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
- H01B13/012—Apparatus or processes specially adapted for manufacturing conductors or cables for manufacturing wire harnesses
Abstract
The invention provides a high-conductivity wire and a preparation method thereof, wherein the preparation method comprises the following steps: selecting a copper wire with a specified shape and a specified size as a core layer; cyclically and alternately growing a graphene film layer and a copper coating on the surface of the core layer; and stopping growing according to the required shape and the required size, and finishing the preparation of the high-conductivity wire. According to the preparation method disclosed by the invention, the graphene film layer has excellent electrical property and inherent electrical and mechanical properties of the copper wire by optimizing the preparation method, so that good compounding is obtained, and the electrical conductivity is greatly improved. In the structure, the core layer and the copper coating have very high carrier concentration, the graphene film layer has very high carrier mobility, the multilayer stacked structure prepared by in-situ growth and deposition can reduce the contact potential barrier between the core layer and the copper coating to the greatest extent, the advantage of efficient carrier transmission can be further improved, and meanwhile, the graphene and the copper are continuous structures in the transmission direction of electric power, so that the scattering and loss in the transmission process are greatly reduced.
Description
Technical Field
The invention belongs to the technical field of high-conductivity electric wires, and particularly relates to a high-conductivity electric wire and a preparation method thereof.
Background
This section provides background information related to the present disclosure only and is not necessarily prior art.
The energy and power industry is the key and fundamental industry in the national economic development strategy, and electric energy is an important form of energy transportation and conversion. With the increasing living standard of residents, the power load is increased day by day. The power grid in China is large in scale and wide in area coverage, and huge energy loss can be generated in the process that electric energy is used and converted through equipment such as electric wires and transformers.
Copper metal is currently the most widely used electrical material because of its good ductility and excellent electrical conductivity. With the rapid development of society and science and technology, the requirements of many emerging technical fields on conductive copper materials are higher and higher, and even the requirements on ultrahigh conductive copper, namely materials with conductivity higher than that of pure copper, are urgent. And if the ultrahigh conductive copper material is developed completely and successfully, the performance of almost all electrical systems and equipment can be obviously improved, the energy consumption is reduced, and great economic and social benefits are generated.
The direction of the single crystal copper wire is one of the directions for improving the conductivity of the copper, the conductivity of the copper can be improved to 105% IACS at most, but the cost is high, the conductivity can be improved by about 2% mostly at high cost, the improvement amplitude is too small, and the cost-effectiveness ratio is too high.
Mixing small-particle-size graphite, graphene, carbon nanotubes and the like with good conductivity with metal copper, and dispersing, extruding and stretching the mixture into the wire in a hot extrusion or cold extrusion mode. The method has the advantages that the carbon material in the method can not form a continuous passage, the conductivity is improved but is not more than 5%, the dispersion is uneven, the carbon material and the processing cost are high, and the cost-effectiveness ratio is high.
Graphene grows on the surface of a copper wire in situ, and then the graphene is subjected to hot sintering and extrusion stretching to form the wire, wherein the conductivity is about 105% IACS (International Annealed copper wire graphene is subjected to hot sintering, extrusion stretching electric conductivity is obtained through extrusion stretching to obtain electric wire, and electric wire electric conductivity is high, and preparation cost is high.
Disclosure of Invention
In view of the above problems, a first aspect of the present invention provides a method for producing a highly conductive electric wire, including:
selecting a copper wire with a specified shape and a specified size as a core layer;
cyclically and alternately growing a graphene film layer and a copper coating on the surface of the core layer;
and stopping growing according to the required shape and the required size, and finishing the preparation of the high-conductivity wire.
According to the invention, the electric wire with the required shape and the required size is prepared on the copper wire core layer by adopting a mode of alternately stacking the graphene film layer and the copper plating layer in multiple layers. The graphene film layer and the copper coating which grow in situ have excellent and controllable quality, and simultaneously can form a continuous conducting structure in the transmission direction of the copper wire of the core layer, so that the conductivity of the electric wire can be greatly improved. The graphene film layer and the copper coating which grow in situ have excellent binding force, the carrier transmission efficiency between the graphene film layer and the copper coating is guaranteed to the greatest extent, the potential barrier between the graphene film layer and the copper coating is greatly reduced, and the conductivity of the material is greatly improved.
According to the preparation method disclosed by the invention, the graphene film layer has excellent electrical property and inherent electrical and mechanical properties of the copper wire by optimizing the preparation method, so that good compounding is obtained, and the electrical conductivity is greatly improved. In the structure, the core layer and the copper coating have very high carrier concentration, the graphene film layer has very high carrier mobility, the multilayer stacked structure prepared by in-situ growth and deposition can reduce the contact potential barrier between the core layer and the copper coating to the greatest extent, the advantage of efficient carrier transmission can be further improved, and meanwhile, the graphene and the copper are continuous structures in the transmission direction of electric power, so that the scattering and loss in the transmission process are greatly reduced.
By combining the factors, the electric wire can realize the performance advantage that the electric conductivity is not lower than 110% IACS (electric conductivity of the International Annealed Copper Standard metal or alloy), even exceeds the electric conductivity of Standard Annealed Copper by more than 30%, and meanwhile, the mechanical strength of the electric wire is ensured by the continuous graphene film layer, the continuous Copper coating layer and the core layer, the electric wire grows to the required shape and the required size, the growth is stopped, the stretching or extruding is not needed, the production process is simplified, the large-scale production is easier to realize, and the production cost is reduced.
In some embodiments of the invention, the core layer is copper wire having a purity of 80% to 99.99%.
In some embodiments of the invention, the core layer is copper wire of 99% to 99.99% purity.
In some embodiments of the invention, the cross-sectional shape of the core layer is circular, elliptical, fan-shaped, or rectangular.
In some embodiments of the present invention, in cyclically and alternately growing the graphene film layer and the copper plating layer on the surface of the core layer, the graphene film layer is grown on the surface of the core layer by a chemical vapor deposition method, and the growth temperature is 300 ℃ to 1100 ℃.
In some embodiments of the invention, the graphene film layer is grown at a temperature of 700 ℃ to 1000 ℃.
In some embodiments of the present invention, a gas is introduced into the surface of the core layer to cyclically and alternately grow the graphene film layer and the copper plating layer, and the gas comprises one or more of hydrogen, hydrocarbon gas, nitrogen, argon, ethanol, water vapor and oxygen.
In some embodiments of the invention, the gas is a mixture of hydrogen and methane.
In some embodiments of the present invention, in cyclically and alternately growing the graphene film layer and the copper plating layer on the surface of the core layer, the growth pressure for growing the graphene film layer is 1Pa-0.2 MPa.
In some embodiments of the invention, the graphene film layer has a growth pressure of 100Pa to 5000 Pa.
In some embodiments of the present invention, the graphene film layer and the copper plating layer are cyclically and alternately grown on the surface of the core layer, wherein the graphene film layer is grown 1-10 layers at a time.
In some embodiments of the present invention, the graphene film layer and the copper plating layer are cyclically and alternately grown on the surface of the core layer, and the graphene film layer is grown 1-3 layers at a time.
In some embodiments of the present invention, in cyclically and alternately growing the graphene film layer and the copper plating layer on the surface of the core layer, the copper plating layer is grown on the surface of the core layer by one or more of a magnetron sputtering method, a chemical vapor deposition method, an atomic layer deposition method, an evaporation method, and an electroplating method.
In some embodiments of the present invention, in cyclically and alternately growing the graphene film layer and the copper plating layer on the surface of the core layer, the copper plating layer is grown on the surface of the core layer by a magnetron sputtering method.
In some embodiments of the present invention, in cyclically and alternately growing the graphene film layer and the copper plating layer on the surface of the core layer, the thickness of the copper plating layer is 0.01 μm to 1 mm.
In some embodiments of the invention, the copper plating is 0.5 μm to 10 μm thick.
In some embodiments of the invention, the graphene film layer and the copper plating layer are cyclically and alternately grown on the surface of the core layer at least twice.
The invention provides a high-conductivity electric wire, which is obtained by the preparation method of the high-conductivity electric wire in the technical scheme and comprises a copper wire, graphene film layers and copper plating layers, wherein the graphene film layers are alternately coated on the surface of the copper wire.
The high-conductivity wire of the embodiment of the invention has the same beneficial effects as the preparation method of the high-conductivity wire of the embodiment, and the details are not repeated herein.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:
fig. 1 is a flow chart of a method of making a highly conductive wire according to an embodiment of the present invention;
fig. 2 is a schematic cross-sectional view of a highly conductive wire according to a first embodiment and a second embodiment of the present invention;
FIG. 3 is a schematic cross-sectional view of a highly conductive wire according to a third embodiment of the present invention;
fig. 4 is a schematic cross-sectional view of a highly conductive wire according to a fourth embodiment of the present invention.
The reference symbols in the drawings denote the following:
1. a core layer;
2. a graphene film layer;
3. and (4) copper plating.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
It is to be understood that the terminology used herein is for the purpose of describing particular example embodiments only, and is not intended to be limiting. As used herein, the singular forms "a", "an" and "the" may be intended to include the plural forms as well, unless the context clearly indicates otherwise. The terms "comprises," "comprising," "including," and "having" are inclusive and therefore specify the presence of stated features, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, elements, components, and/or groups thereof.
Although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms may be only used to distinguish one element, component, region, layer or section from another region, layer or section. Terms such as "first," "second," and other numerical terms when used herein do not imply a sequence or order unless clearly indicated by the context. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the example embodiments.
For convenience of description, spatially relative terms, such as "inner", "outer", "lower", "below", "upper", "above", and the like, may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. This spatially relative term is intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" or "over" the other elements or features. Thus, the example term "below … …" can include both an orientation of above and below. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
The following disclosure provides many different embodiments or examples for implementing different features of the invention. To simplify the disclosure of the present invention, the components and arrangements of specific examples are described below. Of course, they are merely examples and are not intended to limit the present invention. Furthermore, the present invention may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, the present invention provides examples of various specific processes and materials, but one of ordinary skill in the art may recognize applications of other processes and/or uses of other materials.
The preferred embodiments of the present invention will be described in conjunction with the accompanying drawings, and it will be understood that they are described herein for the purpose of illustration and explanation and not limitation.
As shown in fig. 1, a first aspect of the present invention provides a method for preparing a highly conductive wire, including:
selecting a copper wire with a specified shape and a specified size as a core layer 1;
cyclically and alternately growing a graphene film layer 2 and a copper plating layer 3 on the surface of the core layer 1;
and stopping growing according to the required shape and the required size, and finishing the preparation of the high-conductivity wire.
According to the invention, the electric wire with the required shape and the required size is prepared on the copper wire core layer 1 by adopting a mode of alternately stacking the graphene film layer 2 and the copper plating layer 3 in a multilayer manner. The graphene film layer 2 and the copper plating layer 3 which grow in situ have excellent and controllable quality, and simultaneously can form a continuous conduction structure in the transmission direction of the copper wire in the core layer 1, so that the conductivity of the electric wire can be greatly improved. The graphene film layer 2 and the copper coating layer 3 which grow in situ have excellent binding force, the carrier transmission efficiency between the graphene film layer 2 and the copper coating layer 3 is guaranteed to the greatest extent, the potential barrier between the graphene film layer 2 and the copper coating layer 3 is greatly reduced, and the conductivity of the material is greatly improved.
According to the invention, through optimizing the preparation method, the graphene film layer 2 has excellent electrical property and inherent electrical and mechanical properties of the copper wire, so that good compounding is obtained, and the electrical conductivity is greatly improved. In the structure, the core layer 1 and the copper coating layer 3 have very high carrier concentration, the graphene film layer 2 has very high carrier mobility, the multilayer stacked structure prepared by in-situ growth and deposition methods can reduce the contact potential barrier between the two layers to the greatest extent, the advantage of efficient carrier transmission can be further improved, and meanwhile, the graphene and the copper are of continuous structures in the transmission direction of electric power, so that scattering and loss in the transmission process are greatly reduced.
By combining the factors, the electric wire can realize the performance advantage that the electric conductivity is not lower than 110% IACS (electric conductivity of the International Annealed Copper Standard metal or alloy), even exceeds the electric conductivity of Standard Annealed Copper by more than 30%, and meanwhile, the mechanical strength of the electric wire is ensured by the continuous graphene film layer 2, the continuous Copper plating layer 3 and the core layer 1, the electric wire grows to the required shape and the required size, the growth is stopped, the stretching or extruding is not needed, the production process is simplified, the large-scale production is easier to realize, and the production cost is reduced.
In some embodiments of the invention, the core layer 1 is a copper wire with a purity of 80% to 99.99%.
In some embodiments of the invention, the core layer 1 is a copper wire with a purity of 99% to 99.99%.
In some embodiments of the invention, the cross-sectional shape of the core layer 1 is circular, elliptical, fan-shaped or rectangular.
In some embodiments of the present invention, in cyclically and alternately growing the graphene film layer 2 and the copper plating layer 3 on the surface of the core layer 1, the graphene film layer 2 is grown on the surface of the core layer 1 by a chemical vapor deposition method, and the growth temperature is 300 ℃ to 1100 ℃.
In some embodiments of the invention, the graphene film layer 2 is grown at a temperature of 700 ℃ to 1000 ℃.
In some embodiments of the present invention, in the cyclically and alternately growing the graphene film layer 2 and the copper plating layer 3 on the surface of the core layer 1, a gas is introduced to grow the graphene film layer 2, wherein the gas comprises one or more of hydrogen, hydrocarbon gas, nitrogen, argon, ethanol, water vapor and oxygen.
In some embodiments of the invention, the gas is a mixture of hydrogen and methane.
In some embodiments of the present invention, in cyclically and alternately growing the graphene film layer 2 and the copper plating layer 3 on the surface of the core layer 1, the growth pressure for growing the graphene film layer 2 is 1Pa to 0.2 MPa.
In some embodiments of the invention, the graphene film layer 2 has a growth pressure of 100Pa to 5000 Pa.
In some embodiments of the present invention, the graphene film layers 2 and the copper plating layers 3 are cyclically and alternately grown on the surface of the core layer 1, and the graphene film layers 1 to 10 are grown each time.
In some embodiments of the present invention, the graphene film layers 2 and the copper plating layers 3 are cyclically and alternately grown on the surface of the core layer 1, and the graphene film layers 1 to 3 are grown each time.
In some embodiments of the present invention, in cyclically and alternately growing the graphene film layer 2 and the copper plating layer 3 on the surface of the core layer 1, the copper plating layer 3 is grown on the surface of the core layer 1 by one or more of a magnetron sputtering method, a chemical vapor deposition method, an atomic layer deposition method, an evaporation method, and an electroplating method.
In some embodiments of the present invention, in cyclically and alternately growing the graphene film layer 2 and the copper plating layer 3 on the surface of the core layer 1, the copper plating layer 3 is grown on the surface of the core layer 1 by a magnetron sputtering method.
In some embodiments of the present invention, in cyclically and alternately growing the graphene film layer 2 and the copper plating layer 3 on the surface of the core layer 1, the thickness of the copper plating layer 3 is 0.01 μm to 1 mm.
In some embodiments of the invention, the copper plating layer 3 has a thickness of 0.5 μm to 10 μm.
In some embodiments of the present invention, the graphene film layer 2 and the copper plating layer 3 are cyclically and alternately grown on the surface of the core layer 1 at least twice.
The second aspect of the invention provides a high-conductivity electric wire which is obtained by the preparation method of the high-conductivity electric wire in the technical scheme, and the high-conductivity electric wire comprises a copper wire, graphene film layers 2 and copper plating layers 3, wherein the graphene film layers are alternately coated on the surface of the copper wire.
The following will describe the preparation method of the high-conductivity electric wire and the prepared high-conductivity electric wire provided by the present invention with different embodiments:
example one
As shown in fig. 2, a copper wire with a diameter of 300 μm and a circular cross section is selected as a core layer 1, the purity of the copper wire is 99%, and the electric wire is prepared by growing a graphene film layer 2 and a copper plating layer 3 in an annular circumferential direction.
Specifically, a copper wire of the core layer 1 is fed into a cavity of a CVD (Chemical Vapor Deposition) apparatus to grow a graphene film layer 2, and the growth environment of the graphene film layer 2 in the cavity of the CVD apparatus is as follows: 900 ℃, hydrogen and methane volume ratio of 5: 1, the pressure is 500Pa, and the growth environment is kept for 3 minutes every time of secondary growth. And (3) the copper wire after the graphene film layer 2 is grown enters a vacuum PVD (Physical Vapor Deposition) device for copper plating to form a copper plating layer, the copper plating layer with the thickness of 5 microns is uniformly plated on the surface of the graphene film layer 2 every time, the step of growing the graphene film layer 2 and the step of growing the copper plating layer are alternately circulated until the growth diameter of the wire reaches 2.76mm, and the wire is taken out after the preparation of the wire is completed.
Measuring the electric conductivity of the wire in the transmission direction to 150% IACS by Van der Pauw method, and measuring the tensile strength of the wire in the transmission direction to be not less than 410N/mm 2 。
Example two
As shown in FIG. 2, a copper wire with a diameter of 100 μm and a circular cross section is selected as the core layer 1, and the purity of the copper is 99.99%. The preparation of the electric wire is carried out in a mode of growing the graphene film layer 2 and the copper plating layer 3 in the circumferential direction in an annular mode.
Specifically, a copper wire of the core layer 1 is fed into a PECVD (Plasma Enhanced Chemical Vapor Deposition) equipment cavity to grow a graphene film layer 2, and the growth environment of the graphene film layer 2 in the PECVD equipment cavity is as follows: 750 ℃, volume ratio of hydrogen to methane 8: 1, the pressure is 300Pa, and the growth environment is kept for 6 minutes at each growth. And (3) the copper wire after the graphene film layer 2 is grown enters vacuum CVD equipment for copper plating to form a copper plating layer, the copper plating layer with the thickness of 3 mu m is uniformly plated on the surface of the copper wire every time, and the step of growing the graphene film layer 2 and the step of growing the copper plating layer are alternately circulated until the growing diameter of the wire reaches 1.78 mm. And taking out the electric wire when the electric wire is prepared.
Measuring the electric conductivity of the wire in the transmission direction to 160% IACS by Van der Pauw method, and measuring the tensile strength of the wire in the transmission direction to not less than 420N/mm 2 。
EXAMPLE III
As shown in fig. 3, a copper wire with a cross section of 5mm in width, a thickness of 25 μm and a rectangular cross section is selected as a core layer 1, the purity of the copper wire is 98%, and the electric wire is prepared by growing a graphene film layer 2 and a copper plating layer 3 in an annular circumferential direction.
Specifically, the core layer 1 is fed into a CVD (Chemical Vapor Deposition) apparatus cavity to grow a graphene film layer 2, and the growth environment of the graphene film layer 2 in the CVD apparatus cavity is: 850 ℃, hydrogen and methane volume ratio of 4: 1, the pressure is 1000Pa, and the growth environment is kept for 4 minutes each time of growth. And (3) the copper wire after the graphene film layer 2 is grown enters chemical plating equipment for copper plating to form a copper plating layer, the copper plating layer with the thickness of 15 microns is uniformly plated on the surface of the graphene film layer 2 every time, the step of growing the graphene film layer 2 and the step of growing the copper plating layer are alternately circulated until the growth thickness of the wire reaches 3mm, and the wire is taken out until the preparation of the wire is finished.
Measuring the electric conductivity of the wire in the transmission direction to 130% IACS by Van der Pauw method, and measuring the tensile strength of the copper wire in the transmission direction to not less than 380N/mm 2 。
Example four
As shown in fig. 4, a copper wire with a cross section of 5mm in width, a thickness of 50 μm and a rectangular cross section is selected as a core layer 1, the purity of the copper wire is 99.5%, and the preparation of the electric wire is performed by fixing a single-side growth graphene film layer 2 and a copper plating layer 3.
Specifically, the core layer 1 is fed into a CVD (Chemical Vapor Deposition) apparatus cavity to grow the graphene film layer 2, and the growth environment of the graphene film layer 2 in the CVD apparatus cavity is: 900 ℃, volume ratio of hydrogen to acetylene of 10: 1, the pressure is 300Pa, and the growth environment is kept for 5 minutes in each growth. And (3) the copper wire after the graphene film layer 2 is grown enters vacuum PVD equipment for copper plating to form a copper plating layer, the copper plating layer with the thickness of 10 microns is uniformly plated on the surface of the graphene film layer 2 every time, the step of growing the graphene film layer 2 and the step of growing the copper plating layer are alternately circulated until the growth thickness of the wire reaches 2mm, and the wire is taken out until the preparation of the wire is finished.
Measuring the electric conductivity of the wire in the transmission direction to 140% IACS by Van der Pauw method, and measuring the tensile strength of the wire in the transmission direction to be not less than 390N/mm 2 。
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are also included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (18)
1. A method for preparing a highly conductive wire, comprising:
selecting a copper wire with a specified shape and a specified size as a core layer;
cyclically and alternately growing a graphene film layer and a copper coating on the surface of the core layer;
and stopping growing according to the required shape and the required size, and finishing the preparation of the high-conductivity wire.
2. The method for preparing the high-conductivity electric wire according to claim 1, wherein the core layer is a copper wire with a purity of 80% -99.99%.
3. The method for preparing the high-conductivity electric wire according to claim 2, wherein the core layer is a copper wire with a purity of 99% to 99.99%.
4. The method for manufacturing a highly conductive electric wire according to claim 1, wherein the core layer has a cross-sectional shape of a circle, an ellipse, a sector, or a rectangle.
5. The method for preparing a highly conductive wire according to claim 1, wherein the graphene film layer is grown on the surface of the core layer by chemical vapor deposition at a temperature of 300 ℃ to 1100 ℃ in cyclically and alternately growing the graphene film layer and the copper plating layer on the surface of the core layer.
6. The method for manufacturing a highly conductive wire according to claim 5, wherein the growth temperature of the graphene film layer is 700 ℃ to 1000 ℃.
7. The method for preparing the highly conductive wire according to claim 1, wherein a gas is introduced into the surface of the core layer to cyclically and alternately grow the graphene film layer and the copper plating layer, and the gas is one or more of hydrogen, hydrocarbon gas, nitrogen, argon, ethanol, water vapor and oxygen to grow the graphene film layer.
8. The method for producing a highly conductive electric wire according to claim 7, wherein the gas is a mixed gas of hydrogen and methane.
9. The method for manufacturing a highly conductive electric wire according to claim 1, wherein a graphene film layer and a copper plating layer are cyclically and alternately grown on the surface of the core layer, and a growth pressure for growing the graphene film layer is 1Pa to 0.2 MPa.
10. The method for manufacturing the highly conductive electric wire according to claim 9, wherein a growth pressure of the graphene film layer is 100Pa to 5000 Pa.
11. The method for producing a highly conductive electric wire according to claim 1, wherein the graphene film layer and the copper plating layer are cyclically and alternately grown on the surface of the core layer in a range of 1 to 10 layers at a time.
12. The method for producing a highly conductive electric wire according to claim 11, wherein the graphene film layer and the copper plating layer are cyclically and alternately grown on the surface of the core layer in 1 to 3 layers at a time.
13. The method for manufacturing a highly conductive wire according to claim 1, wherein in cyclically and alternately growing the graphene film layer and the copper plating layer on the surface of the core layer, the copper plating layer is grown on the surface of the core layer by one or more methods selected from a magnetron sputtering method, a chemical vapor deposition method, an atomic layer deposition method, an evaporation method, and an electroplating method.
14. The method for manufacturing a highly conductive electric wire according to claim 13, wherein in cyclically and alternately growing the graphene film layer and the copper plating layer on the surface of the core layer, the copper plating layer is grown on the surface of the core layer by a magnetron sputtering method.
15. The method for manufacturing a highly conductive electric wire according to claim 1, wherein the graphene film layer and the copper plating layer are cyclically and alternately grown on the surface of the core layer, and the thickness of the copper plating layer is 0.01 μm to 1 mm.
16. The method for producing a highly conductive electric wire according to claim 15, wherein the thickness of the copper plating layer is 0.5 μm to 10 μm.
17. The method for manufacturing a highly conductive electric wire according to claim 1, wherein the graphene film layer and the copper plating layer are cyclically and alternately grown on the surface of the core layer at least twice.
18. A highly conductive wire obtained by the method for producing a highly conductive wire according to any one of claims 1 to 17, comprising a copper wire, graphene films alternately coated on the surface of the copper wire, and copper plating layers.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103811095A (en) * | 2013-11-22 | 2014-05-21 | 许子寒 | Graphene wire cable conductor |
| CN112768139A (en) * | 2020-12-29 | 2021-05-07 | 国家高速列车青岛技术创新中心 | High-conductivity aluminum wire cable core and preparation method thereof |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103811095A (en) * | 2013-11-22 | 2014-05-21 | 许子寒 | Graphene wire cable conductor |
| CN112768139A (en) * | 2020-12-29 | 2021-05-07 | 国家高速列车青岛技术创新中心 | High-conductivity aluminum wire cable core and preparation method thereof |
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