CN114815527A - Developing method, device and system of photoresist mask and storage medium - Google Patents
Developing method, device and system of photoresist mask and storage medium Download PDFInfo
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- CN114815527A CN114815527A CN202111543776.4A CN202111543776A CN114815527A CN 114815527 A CN114815527 A CN 114815527A CN 202111543776 A CN202111543776 A CN 202111543776A CN 114815527 A CN114815527 A CN 114815527A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
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Abstract
The invention provides a developing method, a developing device, a developing system and a storage medium of a photoresist mask, wherein the method comprises the following steps: completely immersing the exposed area of the photoresist layer in a developing solution in a container; introducing gas into the developing solution from the lower part of the photoresist layer and generating floating bubbles; and after the exposure area of the photoresist layer is completely developed, separating the photoresist layer from the developing solution. Based on the technical scheme of the invention, the photoresist layer is immersed in the developing solution, so that the condition that the developing solution is not uniformly coated is avoided, meanwhile, the developing solution is stirred by utilizing the floating bubbles, and the size and the quantity of the bubbles are regulated, so that the developing solution can be fully stirred, the mass transfer rate on a solid-liquid interface is further improved, the micro-structure of the photoresist mask is prevented from being damaged due to overlarge impact force of the developing solution, and the developing quality of the photoresist layer on the surface of the large-size substrate is improved.
Description
Technical Field
The present invention relates to the field of lithography, and in particular, to a method, an apparatus, a system, and a storage medium for developing a photoresist mask.
Background
The diffraction grating is a basic optical element, and with the continuous development of the technological level and the urgent need of industrial production, the demand for large-size diffraction gratings is increasing. In the field of high-energy laser, large-size diffraction grating is required to expand and compress laser pulse, and high-energy laser pulse (10) is required to be output 19 W/cm 2 ～10 21 W/cm 2 ) The area of the diffraction grating will reach 450mm x 1500 mm. In a precision positioning measurement system, the complex assembly environment of the equipment puts complex appearance shape requirements on the diffraction grating.
The photoetching is one of the manufacturing methods of the diffraction grating, and has the advantages of short manufacturing period, high product quality and the like in the aspect of manufacturing the diffraction grating with large size and high linear density. The method comprises the steps of manufacturing a diffraction grating by using a photoetching method, manufacturing a photoresist mask on the surface of a substrate, developing the photoresist mask as an intermediate process in the manufacturing process of the photoresist mask, and carrying out chemical reaction on the photoresist in an exposure area and a developing solution in the developing process to finally obtain the photoresist mask with a three-dimensional structure.
However, when developing the photoresist layer on the surface of the large-size substrate, especially when developing the photoresist layer on the surface of the irregular large-size substrate, in the process of the solid-liquid reaction between the photoresist layer and the developing solution, the commonly used developing method is difficult to ensure that the photoresist layer is uniformly coated by the developing solution, the microstructure of the photoresist mask is easily damaged, and the developing quality of the photoresist layer on the surface of the large-size substrate is poor.
Disclosure of Invention
In view of the above problems in the prior art, the present application provides a method, an apparatus, a system and a storage medium for developing a photoresist mask, which can ensure that a photoresist layer is uniformly coated with a developing solution when the photoresist layer on the surface of a large-sized substrate is developed, and can sufficiently stir the developing solution to improve the mass transfer rate on a solid-liquid interface, and prevent the impact force of the developing solution from being too large to damage the microstructure of the photoresist mask, thereby greatly improving the developing quality of the photoresist layer on the surface of the large-sized substrate.
The developing method of the photoresist mask comprises the following steps:
completely immersing the exposed area of the photoresist layer in a developing solution in a container;
introducing gas into the developing solution from the lower part of the photoresist layer and generating floating bubbles;
and after the exposure area of the photoresist layer is completely developed, separating the photoresist layer from the developing solution.
In one embodiment, further comprising: after the photoresist layer is separated from the developing solution, the developing solution remained on the photoresist layer is removed, and through the implementation mode, the photoresist layer is separated from the developing solution and then is removed from the developing solution remained on the photoresist layer, so that the developing effect of the photoresist layer is prevented from being influenced.
In one embodiment, the removing the developing solution remaining on the photoresist layer includes:
evacuating the developing solution in the container, and injecting a cleaning solution capable of completely submerging the photoresist layer into the container after the photoresist layer is separated from the developing solution;
introducing gas into the cleaning liquid and generating floating bubbles;
after the developing solution on the photoresist layer is completely removed, the cleaning solution in the container is discharged, and through the embodiment, the cleaning work of the photoresist layer is completed by utilizing the structure of the developing device, no other equipment is needed, and the microstructure of the photoresist mask is not easy to damage in the cleaning process.
In one embodiment, the completely immersing the exposed region of the photoresist layer in the developer solution in the container includes:
arranging the photoresist layer on the surface of the substrate fixed on the clamping part;
and moving the clamping part until the part of the exposure area of the photoresist layer corresponding to the substrate is immersed in the developing solution, and fixing the substrate by using the clamping part through the embodiment so as to ensure that the photoresist can keep static in the subsequent developing process.
In one embodiment, the substrate is kept in a vertical state in the developing solution, and by the embodiment, the substrate is vertically entered into the developing solution in a length direction so that the substrate can be sufficiently contacted with the developing solution agitated by the floating bubbles.
In one embodiment, further comprising: and introducing gas into the developing solution at the target moment.
In one embodiment, the target time comprises:
before the exposure area of the photoresist layer is contacted with the developing solution; or
When the photoresist layer exposure area is contacted with the developing solution; or
When the exposure area of the photoresist layer is completely immersed in the developing solution, through the embodiment, three specific time points for introducing the bubbles are provided, and the photoresist layer can be ensured to be uniformly developed by the developing solution when different photoresist layers are developed.
In one embodiment, the floating bubbles form a floating disturbance area in the developing solution, and the exposure area of the photoresist layer is located in the floating disturbance area.
In one embodiment, the introducing a gas into the developing solution from below the photoresist layer to generate floating bubbles further includes:
the flow and the pressure of the gas introduced into the developing solution are adjusted to adjust the quantity and the size of the bubbles, and through the embodiment, the size of the bubbles and the quantity of the bubbles are adjusted in real time in the developing process, so that the phenomenon that the impact force of the developing solution is too large to damage the microstructure of the photoresist mask is avoided under the condition of the developing solution with sufficient stirring.
In one embodiment, before completely immersing the exposed region of the photoresist layer in the developer in the container, the method further comprises:
the temperature of the developing solution is kept to be the target temperature, and through the embodiment, in the developing process, the photoresist layer and the developing solution react to be greatly influenced by the temperature, so that the temperature of the developing solution is kept to be the target temperature in the developing process, and the target temperature is the optimal temperature of the developing process, so that the developing speed is prevented from being influenced.
The developing device of a photoresist mask of the invention, comprising:
a container for containing a developing solution;
the clamping part is used for fixing the photoresist layer to be still in the developing solution;
the bubble generator is arranged at the bottom of the container;
and the bubble generator is used for introducing bubbles into the developing solution.
The invention provides a developing system of a photoresist mask, comprising:
the developing device is used for developing the exposure area of the photoresist layer;
the air supply device is used for supplying an air source to the bubble generator;
a liquid control device for controlling the volume of the liquid in the container;
a traction device for moving the clamping part;
the temperature control device monitors and adjusts the temperature of the liquid in the container in real time;
a storage medium of the present invention includes: a readable storage medium and computer instructions stored in the readable storage medium; the computer instructions are for implementing the method for developing a photoresist mask described above.
The features mentioned above can be combined in various suitable ways or replaced by equivalent features as long as the object of the invention is achieved.
Compared with the prior art, the developing method, the developing device and the developing system of the photoresist mask, provided by the invention, at least have the following beneficial effects:
(1) the photoresist layer on the surface of the large-size special-shaped substrate can be uniformly coated by the developing solution, and the developing quality is ensured.
(2) The operation is simple, and a complex coating device is not needed.
(3) The floating bubbles are used for stirring the developing solution, and the size and the number of the bubbles are adjusted, so that the developing solution can be fully stirred, the mass transfer rate on a solid-liquid interface is increased, the phenomenon that the microstructure of a photoresist mask is damaged due to overlarge impact force of the developing solution can be avoided, and the developing quality of the photoresist layer on the surface of the large-size substrate is improved.
(4) And vertically putting the large-size special-shaped substrate into the developing solution along the length direction, so that the substrate can be fully contacted with the developing solution stirred by the floating bubbles.
Drawings
The invention will be described in more detail hereinafter on the basis of embodiments and with reference to the accompanying drawings. Wherein:
FIG. 1 shows a schematic view of a development system of one embodiment of the present invention;
FIG. 2 is a schematic view showing a structure of a developing device in one direction according to an embodiment of the present invention;
FIG. 3 is a schematic view showing a structure of a developing device of an embodiment of the present invention in another direction;
in the drawings, like parts are provided with like reference numerals. The drawings are not to scale.
Reference numerals:
101-substrate assembly, 102-traction device, 103-developing device, 104-cleaning device, 105-drying device, 106-gas supply device, 107-liquid control device, 108-computer equipment, 109-action command, 110-large-size substrate, 111-fixture, 112-liquid inlet, 113-container, 114-temperature measuring device, 115-temperature regulating device, 116-liquid level position of developing solution, 117-fixed part, 118-gas flow controller, 119-bubble generator, 120-area to be developed, 121-bubble floating area, and 122-area where photoresist layer is located.
Detailed Description
The invention will be further explained with reference to the drawings.
The development is an intermediate process in the photoresist mask manufacturing process, in the development process, the photoresist in the exposure area and the developing solution are subjected to chemical reaction, the photoresist mask with the three-dimensional structure is finally obtained, and the condition that the photoresist layer on the surface of the large-size substrate is uniformly coated by the developing solution is the precondition for realizing uniform development.
If the conventional rotary substrate method is used for developing, a complex rotation parameter design is required to adjust the balance relationship between the centrifugal force and the liquid surface tension so as to obtain a uniform liquid film, however, for a substrate with a large size and an irregular shape, the regulation of the balance relationship is very difficult, and a larger and more complex traction device is required.
The conventional line scanning method requires the use of a nozzle wider than the substrate, the nozzle moves linearly from one end of the substrate to the other end of the substrate so that the developing solution flowing out of the nozzle covers the entire photoresist layer, a complicated large-stroke movement device is required, and a well-designed nozzle is required to ensure the uniformity of the coating of the developing solution, even if so, the developing solution film at the edge and the inner area of the substrate is different under the action of surface tension, thereby reducing the uniformity of development.
The invention provides a developing method of a photoresist mask, which comprises the following steps:
completely immersing the exposed area of the photoresist layer in a developing solution in a container;
introducing gas into the developing solution from the lower part of the photoresist layer and generating floating bubbles;
and after the exposure area of the photoresist layer is completely developed, the photoresist layer is separated from the developing solution.
The developing solution is stirred by utilizing the floating bubbles, and the developing solution is fully stirred, so that the photoresist layer on the surface of the large-size substrate can be uniformly coated by the developing solution, the concentration of the developing solution near the surface of the photoresist layer can be ensured to be stable in the developing process of the photoresist layer, and the developing uniformity of the photoresist mask is ensured.
In one embodiment, completely immersing the exposed region of the photoresist layer in a developer solution within a container comprises:
disposing a photoresist layer on a surface of a substrate fixed to the clamping portion;
moving the clamping part until the part of the exposure area of the photoresist layer corresponding to the substrate is immersed in the developing solution; the substrate is fixed by the clamping part, so that the photoresist can be kept static in the subsequent developing process.
In one embodiment, the volume of the developing solution may also be set to be able to immerse the large-sized substrate in the container.
In one embodiment, the developing solution may include, without limitation, a tetramethylammonium hydroxide solution, a sodium hydroxide solution, and the like.
In one embodiment, the exposure area of the photoresist layer corresponding to the substrate is kept in a vertical state in the developing solution, and the substrate is vertically put into the developing solution along the length direction, so that the substrate can be fully contacted with the developing solution stirred by the floating bubbles.
In one embodiment, a fixing portion is provided on the container, and the fixing portion may fix the jig such that the large-sized substrate remains stationary during the developing process.
In one embodiment, bubbles are introduced into the developer solution prior to contacting the exposed areas of the photoresist layer with the developer solution.
In one embodiment, bubbles are introduced into the developer solution while the exposed areas of the photoresist layer are in contact with the developer solution.
In one embodiment, bubbles are introduced into the developer solution while the exposed areas of the photoresist layer are fully immersed in the developer solution.
Specifically, the floating bubbles form a floating disturbance area in the developing solution, the exposure area of the photoresist layer is positioned in the floating disturbance area, and the introduced bubbles are utilized to stir the developing solution, so that the exposure area of the photoresist layer reacts with the fully stirred developing solution, the mass transfer rate on the solid-liquid reaction interface of the photoresist layer and the developing solution can be improved, and the developing effect of the photoresist layer in the depth direction is ensured.
In one embodiment, because the development reaction time is different when different photoresist layers are developed, the hardness of the photoresist mask microstructure is different, and the quantity and the size of bubbles are adjusted by adjusting the flow and the pressure of the gas introduced into the developing solution, so that the developing solution is suitable for developing different photoresist layers and has a wide application range.
It should be noted that when the microstructure of the photoresist mask is fragile, the number of bubbles introduced into the developing solution is easily reduced, and the bubbles are adjusted to be smaller in size, so as to avoid damaging the photoresist mask and affecting the developing quality; when the reaction between the photoresist layer and the developing solution is severe, namely the reaction time is short, the number of bubbles introduced into the developing solution is easily increased, and the photoresist layer can be uniformly coated by the developing solution.
In one embodiment, the flow and pressure of the gas introduced into the developing solution are adjusted to adjust the number and size of the bubbles, and the size and number of the bubbles are adjusted in real time during the developing process, so that the damage to the microstructure of the photoresist mask caused by the overlarge impact force of the developing solution is avoided under the condition of fully stirring the developing solution.
In one embodiment, before completely immersing the exposed region of the photoresist layer in the developer in the container, the method further comprises:
the temperature of the developing solution is kept to be the target temperature, the reaction between the photoresist layer and the developing solution is greatly influenced by the temperature, the temperature of the developing solution is kept to be the target temperature in the developing process, the target temperature is the optimal temperature of the developing process, and the developing speed is prevented from being influenced.
Specifically, the optimum temperature may include, and is not limited to, 25 ℃.
In one embodiment, further comprising: after the photoresist layer is separated from the developing solution, the developing solution remained on the photoresist layer is removed, and through the embodiment, after the photoresist layer is separated from the developing solution, the developing solution remained on the photoresist layer is removed, so that the developing effect of the photoresist layer is prevented from being influenced.
Specifically, the step of removing the residual developing solution on the photoresist layer may include a deionized water rinsing method, in which the developing solution in the container 113 is discharged from the liquid outlet 123 by the liquid control device 107, and then deionized water is added into the container 113 from the liquid inlet 112 by the liquid control device 107, so that the large-sized substrate 110 may be immersed in the deionized water, and after a certain period of time, the deionized water in the container 113 is discharged, and then the deionized water is added into the container 113 again. The process is repeated repeatedly to remove the residual developing solution on the large-sized substrate 110, the fixture 111 and the photoresist layer 122, thereby completing the development.
In one embodiment, before the large-sized substrate 110 is handled, the large-sized substrate 110 is first fixed on the fixture 111 to form the substrate assembly 101.
In one embodiment, the fixture 111 may be assembled with the mounting locations of the large-sized substrate 110, and the substrate may be transferred between the processing tools by moving the fixture.
In one embodiment, the draw apparatus 102 may be coupled to a chuck 111 and may also transport large-sized substrates 110 between process runs.
In one embodiment, a developing device is shown at 103, a large-sized substrate is placed in the developing device 103 by the pulling device 102, and the photoresist layer on the surface of the large-sized substrate reacts with a developing solution in the developing device 103, and a photoresist mask is obtained after a certain period of time.
Specifically, as shown in fig. 2, the developing device includes: a container 113 for containing a developer; a fixing portion 117 for fixing the clamp 111 to make the photoresist layer still in the developing solution; an air bubble generator 119 disposed at the bottom of the container 113; so that bubbles are introduced into the developing solution through the bubble generator.
In one embodiment, the clamping portion comprises a clamp 111.
In one embodiment, it is first necessary to add a sufficient amount of developer solution to the container 113 through the inlet 112 by the liquid control device 107, and then, the temperature of the developer solution in the container 113 is monitored by the temperature measuring device 114, and the developer solution is adjusted to a specified temperature by the temperature adjusting device 115, wherein the adjustment includes dynamic temperature increase and temperature decrease.
In one embodiment, as shown in fig. 2, after the developing solution in the container 113 is stabilized at a designated temperature, the large-sized substrate 110 is placed in the container 113 by dragging the chuck 111 by the traction device 102. The position of the liquid level of the developing solution in the container 113 after the large-sized substrate 110 is placed therein is shown by a dotted line 116, the large-sized substrate 110 is immersed in the developing solution, and the chucking tool 111 is held in position by a holding portion 117 on the container 113 to keep the large-sized substrate 110 stationary during the developing process.
In one embodiment, gas flow controller 118 provides gas to bubble generator 119, which may include, without limitation, nitrogen.
In one embodiment, the bubble generator 119 generates bubbles, and the bubble generator 119 may adjust the size of the generated bubbles.
In one embodiment, the gas flow controller 118 may regulate the flow of gas into the bubble generator 119, and the amount of bubbles generated may vary with the flow of gas into the bubble generator 119.
In one embodiment, as shown in fig. 3, a region to be developed of the photoresist layer on the surface of the large-sized substrate 110 is shown at 120, a region covered by a floating path of bubbles is shown by a dotted frame 121, and the region to be developed 120 is completely covered by the floating path of bubbles 121.
In one embodiment, as shown in FIG. 3, the bubble-floating region 121 is disposed on a side of the photoresist layer to be developed 120 that is in contact with the developing solution.
In one embodiment, as shown in fig. 3, the bubble generator 119 is disposed at the bottom of the container 113, the bottom of the large-sized substrate 110 is higher than the bubble generator 119, and bubbles generated from the bubble generator 119 float up in the region 121.
In one embodiment, after the photoresist layer 122 is immersed in the developing solution for a period of time, the developing solution in the container 113 may be drained from the liquid control apparatus 107 through the liquid outlet 123, and then deionized water may be added from the liquid control apparatus 107 into the container 113 through the liquid inlet 112, so that the deionized water may immerse the large-sized substrate 110, and after a period of time, the deionized water in the container 113 may be drained, and then deionized water may be added into the container 113 again. The process is repeated repeatedly to remove the residual developing solution on the large-sized substrate 110, the fixture 111 and the photoresist layer 122, thereby completing the development.
In one embodiment, after the photoresist layer 122 is immersed in the developing solution for a period of time, the developing solution in the container 113 may be drained from the liquid control device 107 through the liquid outlet 123, deionized water may be added into the container 113 from the liquid control device 107 through the liquid inlet 112, the deionized water may immerse the large-sized substrate 110, bubbles may be generated by the bubble generator 119 to agitate the deionized water, the deionized water in the container 113 may be drained after a period of time, and deionized water may be added into the container 113 again and introduced into the bubbles. The process is repeated repeatedly to remove the residual developing solution on the large-sized substrate 110, the jig 111, and the photoresist layer 122, thereby completing the development.
In one embodiment, after the photoresist layer 122 is immersed in the developing solution for a period of time, the large-sized substrate 110 may be taken out of the container 113 by the pulling device 102 dragging the fixture 111 and put into the cleaning device 104, and the cleaning device 104 removes the residual developing solution on the large-sized substrate 110, the fixture 111 and the photoresist layer 122, thereby completing the development.
The invention provides a developing system of a photoresist mask, comprising:
the gas supply device 106, the gas supply device 106 may include, but is not limited to, a gas source, a gas path, etc., the gas supply device 106 may provide gas to the bubble generator 119, and the gas supply device 106 may also provide gas to other devices requiring gas according to the present invention;
the liquid control device 107, the liquid control device 107 may include but is not limited to a liquid storage tank, a pipeline, a valve, etc., the liquid control device 107 may fill liquid into the container 113, may also discharge liquid in the container 113, and the liquid control device 107 may also fill liquid into other devices requiring liquid in the present invention, and may also discharge liquid in other devices requiring liquid in the present invention;
a drawing device 102, wherein the drawing device 102 can carry the fixture 111 loaded with the large-size substrate 110;
a drying device 105 which can dry the photoresist layer, the large-sized substrate 110, and the jig 111;
a computer program of computer-readable instructions for,
in one embodiment, the system further includes a computer device 108 that can control the traction device, the fluid control device, the air supply device, the cleaning device, and the drying device.
Specifically, the computer device includes:
a memory storing processor readable instructions 109;
a processor arranged to read and execute instructions 109 stored in the memory.
In the description of the present invention, it is to be understood that the terms "upper", "lower", "bottom", "top", "front", "rear", "inner", "outer", "left", "right", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are only for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, should not be construed as limiting the present invention.
Although the invention herein has been described with reference to particular embodiments, it is to be understood that these embodiments are merely illustrative of the principles and applications of the present invention. It is therefore to be understood that numerous modifications may be made to the illustrative embodiments and that other arrangements may be devised without departing from the spirit and scope of the present invention as defined by the appended claims. It should be understood that features from different dependent claims and herein may be combined in ways other than those described in the original claims. It is also to be understood that features described in connection with individual embodiments may be used in other embodiments.
Claims (13)
1. A method of developing a photoresist mask, comprising:
completely immersing the exposed area of the photoresist layer in a developing solution in a container;
introducing gas into the developing solution from the lower part of the photoresist layer and generating floating bubbles;
and after the exposure area of the photoresist layer is completely developed, separating the photoresist layer from the developing solution.
2. The method of developing a photoresist mask of claim 1, further comprising: and removing the developing solution remained on the photoresist layer after the photoresist layer is separated from the developing solution.
3. The method for developing a photoresist mask according to claim 2, wherein the removing the developing solution remaining on the photoresist layer comprises:
evacuating the developing solution in the container, and injecting a cleaning solution capable of completely submerging the photoresist layer into the container after the photoresist layer is separated from the developing solution;
introducing gas into the cleaning liquid and generating floating bubbles;
and after the developing solution on the photoresist layer is completely removed, discharging the cleaning solution in the container.
4. The method of claim 1, wherein completely immersing the exposed region of the photoresist layer in the developer solution in the container comprises:
arranging the photoresist layer on the surface of the substrate fixed on the clamping part;
and moving the clamping part to the part of the exposure area of the photoresist layer corresponding to the substrate to be immersed in the developing solution.
5. The method of claim 4, wherein the substrate is held in a vertical state in the developer.
6. The method of developing a photoresist mask of claim 1, further comprising: and introducing gas into the developing solution at the target moment.
7. The method of claim 6, wherein the target time comprises:
before the exposure area of the photoresist layer is contacted with the developing solution; or
When the photoresist layer exposure area is contacted with the developing solution; or
And when the exposed area of the photoresist layer is completely immersed in the developing solution.
8. The method of developing a photoresist mask of claim 1, wherein the buoyant bubbles form a buoyant disturbance zone in the developer solution, the exposure area of the photoresist layer being within the buoyant disturbance zone.
9. The method of claim 1, wherein the step of introducing gas into the developing solution from below the photoresist layer to generate floating bubbles further comprises:
and adjusting the flow and pressure of the gas introduced into the developing solution to adjust the quantity and size of the bubbles.
10. The method of claim 1, wherein prior to completely immersing the exposed region of the photoresist layer in the developer solution in the container, further comprising:
maintaining the temperature of the developing solution at a target temperature.
11. An apparatus for developing a photoresist mask, comprising:
a container for containing a developing solution;
the clamping part is used for fixing the photoresist layer to be still in the developing solution;
the bubble generator is arranged at the bottom of the container;
and the bubble generator is used for introducing bubbles into the developing solution.
12. A system for developing a photoresist mask, comprising:
the developing device is used for developing the exposure area of the photoresist layer;
the air supply device is used for supplying an air source to the bubble generator;
a liquid control device for controlling the volume of the liquid in the container;
a traction device for moving the clamping part;
and the temperature control device monitors and adjusts the temperature of the liquid in the container in real time.
13. A storage medium, comprising: a readable storage medium and computer instructions stored in the readable storage medium; the computer instructions are for implementing a method of developing a photoresist mask as claimed in any one of claims 1 to 10.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111543776.4A CN114815527A (en) | 2021-12-16 | 2021-12-16 | Developing method, device and system of photoresist mask and storage medium |
| PCT/CN2022/134220 WO2023109470A1 (en) | 2021-12-16 | 2022-11-25 | Developing method, apparatus and system for photoresist mask, and storage medium |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202111543776.4A CN114815527A (en) | 2021-12-16 | 2021-12-16 | Developing method, device and system of photoresist mask and storage medium |
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| CN114815527A true CN114815527A (en) | 2022-07-29 |
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| CN202111543776.4A Pending CN114815527A (en) | 2021-12-16 | 2021-12-16 | Developing method, device and system of photoresist mask and storage medium |
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| WO (1) | WO2023109470A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2023109470A1 (en) * | 2021-12-16 | 2023-06-22 | 清华大学 | Developing method, apparatus and system for photoresist mask, and storage medium |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0777810A (en) * | 1993-09-09 | 1995-03-20 | Toray Ind Inc | Developing device and developing method for photosensitive polymer film |
| JPH1031315A (en) * | 1996-07-16 | 1998-02-03 | Nec Corp | Developing device for resist pattern |
| JP3679695B2 (en) * | 1999-08-12 | 2005-08-03 | 東京エレクトロン株式会社 | Developing apparatus, substrate processing apparatus, and developing method |
| JP3920897B2 (en) * | 2005-07-25 | 2007-05-30 | 東京エレクトロン株式会社 | Developing apparatus and developing method |
| CN108345187A (en) * | 2018-02-02 | 2018-07-31 | 武汉华星光电技术有限公司 | Develop chamber and its spray assemblies, developing method |
| CN110618586A (en) * | 2019-10-08 | 2019-12-27 | 江苏晟驰微电子有限公司 | Novel photoetching development process |
| CN210954616U (en) * | 2019-12-10 | 2020-07-07 | 广德均瑞电子科技有限公司 | Etching developing device |
| CN114815527A (en) * | 2021-12-16 | 2022-07-29 | 清华大学 | Developing method, device and system of photoresist mask and storage medium |
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- 2021-12-16 CN CN202111543776.4A patent/CN114815527A/en active Pending
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| WO2023109470A1 (en) * | 2021-12-16 | 2023-06-22 | 清华大学 | Developing method, apparatus and system for photoresist mask, and storage medium |
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