CN114807631B - Continuous microwave treatment device for strengthening grinding and leaching efficiency of vanadium shale - Google Patents

Continuous microwave treatment device for strengthening grinding and leaching efficiency of vanadium shale Download PDF

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CN114807631B
CN114807631B CN202210474406.8A CN202210474406A CN114807631B CN 114807631 B CN114807631 B CN 114807631B CN 202210474406 A CN202210474406 A CN 202210474406A CN 114807631 B CN114807631 B CN 114807631B
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wave source
side plate
plate
upper edge
roof
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CN114807631A (en
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袁益忠
张一敏
胡鹏程
刘红
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Wuhan University of Science and Engineering WUSE
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Wuhan University of Science and Engineering WUSE
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    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22BPRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B34/00Obtaining refractory metals
    • C22B34/20Obtaining niobium, tantalum or vanadium
    • C22B34/22Obtaining vanadium
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22BPRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B3/00Extraction of metal compounds from ores or concentrates by wet processes
    • C22B3/04Extraction of metal compounds from ores or concentrates by wet processes by leaching

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Abstract

A continuous microwave treatment device for strengthening the grinding and leaching efficiency of vanadium shale. The technical proposal is as follows: the device consists of a cavity surrounded by 4 rectangular flat plates, 4n wave sources and a material conveying belt (9), wherein n is a natural number of 2-10, and the material conveying belt (9) is horizontally arranged in the cavity. The 1 st top plate wave source (8), the 1 st left side plate wave source (2), the 1 st bottom plate wave source (4) and the 1 st right side plate wave source (6) are sequentially positioned at a/2, 3a/2 and 3a/2 of the starting edges of the top plate (1), the left side plate (3), the bottom plate (5) and the right side plate (7) which are respectively corresponding, and the distance between each of the 4 wave sources of the top plate wave source (8), the left side plate wave source (2), the bottom plate wave source (4) and the right side plate wave source (6) is 2a. The method has the characteristics of short treatment period, low energy consumption, no carbon emission, high grindability of the vanadium shale, good leaching rate strengthening effect, simple continuous operation and high production efficiency, and is suitable for a vanadium extraction system of the vanadium shale by an all-wet method.

Description

Continuous microwave treatment device for strengthening grinding and leaching efficiency of vanadium shale
Technical Field
The invention belongs to a continuous microwave treatment device for vanadium shale. In particular to a continuous microwave treatment device for strengthening the grinding and leaching efficiency of vanadium shale.
Background
The vanadium shale (vanadium-containing stone coal) is taken as a special important advantage vanadium-containing resource in China, the vanadium reserves of the shale exceed the sum of the vanadium reserves of other countries, and the shale vanadium extraction is an important path and demand guarantee for the development and utilization of the vanadium resources in China. Microwaves are widely focused as a clean energy source in the field of mining and metallurgy, particularly in the aspects of auxiliary grinding, enhanced leaching and the like. Thus, microwave devices for mineral resource processing are also a focus of attention in the art.
Wang Junpeng et al (Wang Junpeng, jiang Tao, liu Yajing, xue Xiangxin. Influence of microwave pretreatment on grinding kinetics of vanadium titano-magnetite [ J ]. University of northeast university (Nature science edition), 2019,40 (5): 663-667) treatment of vanadium titano-magnetite with a microwave workstation of the top single waveguide type, at a microwave power of 4kW and a treatment time of 2min, the grindability (in terms of crushing rate) of vanadium titano-magnetite was improved up to about 90%, but to a lesser extent; although the treatment time is shorter, higher microwave power is needed, so that the treatment energy consumption is increased; on the other hand, the equipment is a discontinuous microwave treatment device, can not continuously treat the vanadium shale, and is complex in operation and low in efficiency when a large amount of vanadium shale is required to be treated. The method has the advantages that the microwave device is used for treating vanadium minerals, and the defects of high microwave power, high energy consumption, small improvement degree of grindability of the vanadium minerals, responsibility for device operation and low treatment efficiency are overcome.
Liu Tao et al (Liu Tao, hu Pengcheng, zhang Yimin, yuan Yizhong. Research on vanadium extraction test by microwave roasting of vanadium-containing stone coal [ J ]. Nonferrous metals (smelting part), 2015 (1): 46-53.) A microwave high temperature reactor was used to perform microwave roasting pretreatment on vanadium-containing stone coal to enhance the leaching efficiency of shale vanadium. Under the conditions that the microwave roasting temperature is 550 ℃, the roasting time is 20min, the sulfuric acid volume concentration is 15%, the leaching time is 6h, the liquid-solid ratio is 1.5:1 (mL/g), the leaching temperature is 95 ℃, the vanadium leaching rate is 86.64%, and under the same leaching condition, the leaching rate of vanadium is 84.22% after roasting for 1h at 700 ℃ in a conventional muffle furnace. Compared with the conventional device, the microwave equipment treatment device can obtain similar vanadium leaching rate under the conditions of low roasting temperature and short roasting time, but still has the problems of high treatment temperature and long treatment time under the condition of roasting at 700 ℃ for 20 min; and under such roasting conditions, the carbon in the ore is almost completely combusted, and serious carbon emission problems exist; furthermore, the microwave high-temperature reactor belongs to intermittent treatment equipment, and when a large amount of vanadium-containing shale is required to be treated, the device is relatively complex to operate and has low efficiency. The technology for roasting vanadium shale by using the microwave high-temperature reactor has the defects of long treatment time, high energy consumption, high carbon emission, complex operation and low treatment efficiency.
Wang Hui (Wang Hui. Research on leaching process of vanadium ore from stone coal by microwave-assisted method [ D ]. University of construction science and technology of Western An, 2011.) the research on leaching of vanadium-containing stone coal by microwave-enhanced method is carried out by using a microwave solution chemical reactor. It was found that when the microwave power was 440W, the microwave irradiation time was 2 hours, the sulfuric acid concentration was 10% and the liquid-solid ratio was 4:1 (mL/g), the vanadium leaching rate was 77.91%; compared with the vanadium leaching rate of the conventional heating stirring equipment for stirring leaching for 6 hours at 90 ℃, the vanadium leaching rate is improved by about 6 percent. The method has low microwave power, does not need to bake the vanadium-containing stone coal at high temperature, strengthens the leaching efficiency of the vanadium shale by utilizing microwaves under an all-wet vanadium extraction system, and can avoid the problem of carbon emission. However, the process still needs long microwave irradiation time, high energy consumption of microwave treatment, low leaching rate of vanadium and small degree of leaching rate improvement. Likewise, the microwave solution chemical reactor belongs to an intermittent treatment device, cannot realize continuous operation, and is complex to operate and low in efficiency when a large amount of vanadium shale is required to be treated. The technology for carrying out microwave enhanced leaching on the vanadium shale by the microwave solution chemical reactor has the defects of long treatment time, high energy consumption, small improvement degree of vanadium leaching rate, complex device operation and low efficiency.
In summary, the existing vanadium shale microwave treatment device has the technical defects of long treatment time, high energy consumption, high carbon emission, low grindability of vanadium shale, low improvement degree of vanadium leaching efficiency, complex device operation and low treatment efficiency.
Disclosure of Invention
The invention aims to overcome the defects of the prior art, and aims to provide a continuous microwave treatment device for strengthening the grinding and leaching efficiency of vanadium shale, which has the advantages of short treatment period, low energy consumption, less carbon emission, high grindability of the vanadium shale, good leaching rate strengthening effect and high treatment efficiency, and is suitable for a vanadium extraction system of the vanadium shale by a full wet method.
In order to achieve the above purpose, the invention adopts the following technical scheme:
the continuous microwave treatment device consists of a cavity body formed by 4 rectangular flat plates, 4n wave sources and a material conveying belt; the length of the rectangular flat plates is multiplied by the width=2na×a, each rectangular flat plate is uniformly provided with n wave sources respectively, 4n wave sources are the same, and n is a natural number of 2-10. The cavity is horizontally provided with a material conveying belt, the height of the upper surface of the conveying belt from the top of the cavity is 0.52-0.58 a, the width of the conveying belt is 0.9-0.95 a, and the conveying speed of the conveying belt is na-2 na/min.
The four rectangular flat plates are respectively a top plate, a left side plate, a bottom plate and a right side plate, and the top plate, the left side plate, the bottom plate and the right side plate are respectively provided with a top plate wave source, a left side plate wave source, a bottom plate wave source and a right side plate wave source correspondingly in sequence; each wave source consists of 1 magnetron and 1 waveguide, and each wave source is rectangular on the mounting surface of the rectangular flat plate.
Mounting position of each wave source on the respective rectangular flat plate:
for simplicity of description, it is assumed that the cavity is unfolded to a plane by separating the cavity from the intersection of the top plate and the right plate; and the following steps: the inlet end of the material is the initial edge of each rectangular flat plate, the parting line of the top plate is the upper edge of the cavity unfolding surface, namely, the first horizontal line of the cavity unfolding surface is the upper edge of the top plate, the second horizontal line of the cavity unfolding surface is the upper edge of the left side plate, the third horizontal line of the cavity unfolding surface is the upper edge of the bottom plate, and the fourth horizontal line of the cavity unfolding surface is the upper edge of the right side plate.
The mounting position of the top plate wave source on the top plate: the 1 st roof wave source is located at a/2 from the roof start edge, the 2 nd roof wave source is located at 2a (2-1) +a/2 from the roof start edge, the 3 rd roof wave source is located at 2a (3-1) +a/2 from the roof start edge, … …, and so on, the nth roof wave source is located at 2a (n-1) +a/2 from the roof start edge. The distance between the mounting surface center O1 of each roof wave source and the upper edge line of the roof is a/4, and the long side of the mounting surface of each roof wave source is perpendicular to the upper edge line of the roof.
Left side board wave source is in the mounted position of left side board: the 1 st left-side plate wave source is positioned at a/2 from the starting edge of the left-side plate, the 2 nd left-side plate wave source is positioned at 2a (2-1) +a/2 from the starting edge of the left-side plate, the 3 rd left-side plate wave source is positioned at 2a (3-1) +a/2 from the starting edge of the left-side plate, … …, and so on, the nth left-side plate wave source is positioned at 2a (n-1) +a/2 from the starting edge of the left-side plate. The distance between the installation surface center O2 of each left side plate wave source and the upper edge line of the left side plate is a/4, and the included angle theta between the long edge of the installation surface of each left side plate wave source and the upper edge line of the left side plate is 0-45 degrees.
The installation position of the bottom plate wave source on the bottom plate: the 1 st floor wave source is located at 3a/2 from the floor start edge, the 2 nd floor wave source is located at 2a (2-1) +3a/2 from the floor start edge, the 3 rd floor wave source is located at 2a (3-1) +3a/2 from the floor start edge, … …, and so on, the nth floor wave source is located at 2a (n-1) +3a/2 from the floor start edge. The distance between the installation surface center O3 of each bottom plate wave source and the upper edge line of the bottom plate is a/4, and the long side of the installation surface of each bottom plate wave source is parallel to the upper edge line of the bottom plate.
Right side board wave source is in the mounted position of right side board: the 1 st right side plate wave source is positioned at 3a/2 from the starting edge of the right side plate, the 2 nd right side plate wave source is positioned at 2a (2-1) +3a/2 from the starting edge of the right side plate, the 3 rd right side plate wave source is positioned at 2a (3-1) +3a/2 from the starting edge of the right side plate, … …, and so on, the nth right side plate wave source is positioned at 2a (n-1) +3a/2 from the starting edge of the right side plate. The distance between the installation surface center O4 of each right side plate wave source and the upper edge line of the right side plate is a/4, and the included angle beta between the long side of the installation surface of each right side plate wave source and the upper edge line of the right side plate is 90-theta.
The long side l=a/6 to a/3 of the rectangle.
By adopting the technical scheme, the invention has the following beneficial effects:
1. the invention is based on simulation and experimental verification of an electric-magnetic-thermal-stress composite physical field in a cavity of a microwave treatment device, carries out layout optimization on the cavity and wave sources of a continuous microwave treatment device (hereinafter referred to as a continuous microwave treatment device) for strengthening the grinding and leaching efficiency of vanadium shale, and n wave sources corresponding to the wave sources are respectively and regularly arranged at different positions and at different angles on the outer walls of 4 flat plates of the cavity of the continuous microwave treatment device, thereby realizing the optimal distribution of the composite physical field in the cavity and fully playing the induction strengthening role of the microwave on the heterogeneous dissociation of the vanadium shale; in addition, the multi-wave source continuous treatment mode can realize that the vanadium shale is subjected to continuous multi-dimensional irradiation in the running process in the cavity, so that the treatment effect is improved and the treatment period is shortened. The test proves that: the device can realize the high-efficiency pretreatment of the vanadium shale within 1-2 min and below the combustion temperature of carbon, so that the grindability (according to the crushing rate) of the vanadium shale is improved by more than 200%, and meanwhile, the ore grinding energy consumption (including the microwave pretreatment energy consumption) is reduced by more than 40%, and the device has the advantages of short treatment period, good treatment effect and low energy consumption.
2. Aiming at the special mineral characteristics of the vanadium shale, the invention is based on the simulation of a composite physical field, through the special designs of a microwave cavity, n stages (a first wave source of 4 flat plates is called a first stage, a second wave source of 4 flat plates is called a second stage, … …, and so on, an nth wave source of 4 flat plates is called an nth stage) wave source and a continuous transmission device, in the pretreatment process, the microwave prime power effect of multiple stages (wave sources) is continuously excited, the treated vanadium shale continuously and alternately receives the effect of the n stages of electric-magnetic-thermal-stress composite physical fields in the cavity, the effective damage to the lattice structure of the vanadium-containing mineral in the vanadium shale is greatly enhanced, the leaching rate of the vanadium is improved by more than 15 percent under the same leaching condition, and the vanadium leaching rate is obviously enhanced.
3. In the process of the microwave treatment of the vanadium shale, the continuous microwave treatment device provided by the invention can be arranged between the crushing process and the ore grinding process of the vanadium shale due to short treatment period, low overall temperature and no carbon emission, and is suitable for a vanadium extraction system of the vanadium shale by a full wet method.
4. According to the invention, a multistage continuous distribution mechanism of an n-level wave source is combined with the material conveying belt (9), the irradiation power, irradiation time and conveying speed of the material conveying belt (9) of each level wave source are regulated, and optimized matching is carried out, so that on one hand, the operation steps are simplified, batch continuous treatment of vanadium shale can be realized under simple operation, on the other hand, as the treated vanadium shale continuously passes through n electric-magnetic-thermal-stress composite physical fields, the radiation non-uniformity in a plurality of physical fields in a cavity of a microwave device can be greatly reduced by continuous and alternate radiation energy, higher grindability and leaching efficiency of the vanadium shale can be obtained in a short time, and the production efficiency is high.
Therefore, the method has the characteristics of short treatment period, low energy consumption, no carbon emission, high grindability of the vanadium shale, good leaching rate strengthening effect, simple continuous operation and high production efficiency, and is suitable for a vanadium extraction system of the vanadium shale by an all-wet method.
Drawings
FIG. 1 is a schematic structural view of a continuous microwave treatment device for enhancing the grinding and leaching efficiency of vanadium shale in the invention;
fig. 2 is an expanded schematic view of the structure shown in fig. 1.
Detailed Description
The invention is further described in connection with the accompanying drawings and detailed description, without limiting the scope thereof:
in order to avoid repetition, the related structures of this embodiment are described in the following in detail, and the embodiments are not repeated here:
as shown in fig. 1, the four rectangular flat plates are respectively a top plate 1, a left side plate 3, a bottom plate 5 and a right side plate 7, and the top plate 1, the left side plate 3, the bottom plate 5 and the right side plate 7 are respectively provided with a top plate wave source 8, a left side plate wave source 2, a bottom plate wave source 4 and a right side plate wave source 6 in sequence correspondingly; each wave source consists of 1 magnetron and 1 waveguide, and each wave source is rectangular on the mounting surface of the rectangular flat plate.
For simplicity of description, it is assumed that the cavity shown in fig. 1 is separated from the intersection of the top plate 1 and the right side plate 7, and the cavity is unfolded into the plan view shown in fig. 2; and the following steps: the inlet end of the material is the initial edge of each rectangular flat plate, the parting line of the top plate 1 is the upper edge of the cavity unfolding surface, namely, the first horizontal line of the cavity unfolding surface is the upper edge of the top plate 1, the second horizontal line of the cavity unfolding surface is the upper edge of the left side plate 3, the third horizontal line of the cavity unfolding surface is the upper edge of the bottom plate 5, and the fourth horizontal line of the cavity unfolding surface is the upper edge of the right side plate 7.
Example 1
A continuous microwave treatment device for strengthening the grinding and leaching efficiency of vanadium shale. As shown in fig. 1, the continuous microwave treatment device is composed of a cavity enclosed by 4 rectangular flat plates, 4×n wave sources and a material conveying belt 9. The length multiplied by the width=2na×a of the rectangular flat plates, each rectangular flat plate is uniformly provided with n wave sources respectively, and the 4n wave sources are the same; a material conveying belt 9 is horizontally arranged in the cavity, the height of the upper surface of the conveying belt 9 from the top of the cavity is 0.55a, and the width of the conveying belt 9 is 0.92a; the transport speed of the conveyor belt 9 was 1.5na/min.
In this embodiment: the n=5.
Mounting position of each wave source on the respective rectangular flat plate:
the mounting position of the roof wave source 8 on the roof 1 is as shown in fig. 2: the 1 st roof wave source 8 is located at a/2 from the start edge of the roof 1, the 2 nd roof wave source 8 is located at 2a+a/2 from the start edge of the roof 1, the 3 rd roof wave source 8 is located at 4a+a/2 from the start edge of the roof 1, the 4 th roof wave source 8 is located at 6a+a/2 from the start edge of the roof 1, and the 5 th roof wave source 8 is located at 8a+a/2 from the start edge of the roof 1. The center O1 of the mounting surface of each roof wave source 8 is a/4 from the upper edge line of the roof 1, and the long side of the mounting surface of each roof wave source 8 is perpendicular to the upper edge line of the roof 1.
The mounting position of the left-side plate wave source 2 on the left-side plate 3 is as shown in fig. 2: the 1 st left-side plate wave source 2 is positioned at a/2 from the starting edge of the left-side plate 3, the 2 nd left-side plate wave source 2 is positioned at 2a+a/2 from the starting edge of the left-side plate 3, the 3 rd left-side plate wave source 2 is positioned at 4a+a/2 from the starting edge of the left-side plate 3, the 4 th left-side plate wave source 2 is positioned at 6a+a/2 from the starting edge of the left-side plate 3, and the 5 th left-side plate wave source 2 is positioned at 8a+a/2 from the starting edge of the left-side plate 3. The distance between the center O2 of the installation surface of each left-side plate wave source 2 and the upper edge line of the left-side plate 3 is a/4, and the included angle theta between the long edge of the installation surface of each left-side plate wave source 2 and the upper edge line of the left-side plate 3 is 30 degrees.
The installation position of the bottom plate wave source 4 on the bottom plate 5 is as shown in fig. 2: the 1 st floor wave source 4 is located at 3a/2 from the starting edge of the floor 5, the 2 nd floor wave source 4 is located at 2a+3a/2 from the starting edge of the floor 5, the 3 rd floor wave source 4 is located at 4a+3a/2 from the starting edge of the floor 5, the 4 th floor wave source 4 is located at 6a+3a/2 from the starting edge of the floor 5, and the 5 th floor wave source 4 is located at 8a+3a/2 from the starting edge of the floor 5. The center O3 of the installation surface of each floor wave source 4 is a/4 from the upper edge line of the floor 5, and the long side of the installation surface of each floor wave source 4 is parallel to the upper edge line of the floor 5.
The installation position of the right side plate wave source 6 on the right side plate 7 is shown in fig. 2, the 2 nd right side plate wave source 6 is positioned at 2a+3a/2 from the starting edge of the right side plate 7, the 3 rd right side plate wave source 6 is positioned at 4a+3a/2 from the starting edge of the right side plate 7, the 4 th right side plate wave source 6 is positioned at 6a+3a/2 from the starting edge of the right side plate 7, and the 5 th right side plate wave source 6 is positioned at 8a+3a/2 from the starting edge of the right side plate 7. The distance between the installation surface center O4 of each right side plate wave source 6 and the upper edge line of the right side plate 7 is a/4, and the included angle beta between the long side of the installation surface of each right side plate wave source 6 and the upper edge line of the right side plate 7 is 60 degrees.
The long side of the rectangle l=a/6.
Example 2
A continuous microwave treatment device for strengthening the grinding and leaching efficiency of vanadium shale. As shown in fig. 1, the continuous microwave treatment device is composed of a cavity enclosed by 4 rectangular flat plates, 4×n wave sources and a material conveying belt 9. The length of each rectangular flat plate is multiplied by the width=2na×a, each rectangular flat plate is uniformly provided with n wave sources respectively, and the 4n wave sources are the same; a material conveying belt 9 is horizontally arranged in the cavity, the height of the upper surface of the conveying belt 9 from the top of the cavity is 0.58a, and the width of the conveying belt 9 is 0.9a; the transport speed of the conveyor belt 9 is na/min.
In this embodiment: the n=10.
Mounting position of each wave source on the respective rectangular flat plate:
the mounting position of the roof wave source 8 on the roof 1 is as shown in fig. 2: the 1 st roof wave source 8 is located at a/2 from the start edge of the roof 1, the 2 nd roof wave source 8 is located at 2a+a/2 from the start edge of the roof 1, the 3 rd roof wave source 8 is located at 4a+a/2 from the start edge of the roof 1, … …, and so on, the 10 th roof wave source 8 is located at 18a+a/2 from the start edge of the roof 1. The center O1 of the mounting surface of each roof wave source 8 is a/4 from the upper edge line of the roof 1, and the long side of the mounting surface of each roof wave source 8 is perpendicular to the upper edge line of the roof 1.
The mounting position of the left-side plate wave source 2 on the left-side plate 3 is as shown in fig. 2: the 1 st left-side plate wave source 2 is located at a/2 from the starting edge of the left-side plate 3, the 2 nd left-side plate wave source 2 is located at 2a+a/2 from the starting edge of the left-side plate 3, the 3 rd left-side plate wave source 2 is located at 4a+a/2 from the starting edge of the left-side plate 3, … …, and so on, the 10 th left-side plate wave source 2 is located at 18a+a/2 from the starting edge of the left-side plate 3. The distance between the center O2 of the installation surface of each left-side plate wave source 2 and the upper edge line of the left-side plate 3 is a/4, and the included angle theta between the long edge of the installation surface of each left-side plate wave source 2 and the upper edge line of the left-side plate 3 is 45 degrees.
The installation position of the bottom plate wave source 4 on the bottom plate 5 is as shown in fig. 2: the 1 st floor wave source 4 is located at 3a/2 from the start edge of the floor 5, the 2 nd floor wave source 4 is located at 2a+3a/2 from the start edge of the floor 5, the 3 rd floor wave source 4 is located at 4a+3a/2 from the start edge of the floor 5, … …, and so on, the 10 th floor wave source 4 is located at 18a+3a/2 from the start edge of the floor 5. The center O3 of the installation surface of each floor wave source 4 is a/4 from the upper edge line of the floor 5, and the long side of the installation surface of each floor wave source 4 is parallel to the upper edge line of the floor 5.
The installation position of the right-side plate wave source 6 on the right-side plate 7 is as shown in fig. 2: the 1 st right-side plate wave source 6 is located at 3a/2 from the start edge of the right-side plate 7, the 2 nd right-side plate wave source 6 is located at 2a+3a/2 from the start edge of the right-side plate 7, the 3 rd right-side plate wave source 6 is located at 4a+3a/2 from the start edge of the right-side plate 7, … …, and so on, the 10 th right-side plate wave source 6 is located at 18a (n-1) +3a/2 from the start edge of the right-side plate 7. The distance between the installation surface center O4 of each right side plate wave source 6 and the upper edge line of the right side plate 7 is a/4, and the included angle beta between the long side of the installation surface of each right side plate wave source 6 and the upper edge line of the right side plate 7 is 45 degrees.
The long side of the rectangle l=a/4.
Example 3
A continuous microwave treatment device for strengthening the grinding and leaching efficiency of vanadium shale. As shown in fig. 1, the continuous microwave treatment device is composed of a cavity enclosed by 4 rectangular flat plates, 4×n wave sources and a material conveying belt 9. The length of each rectangular flat plate is multiplied by the width=2na×a, each rectangular flat plate is uniformly provided with n wave sources respectively, and the 4n wave sources are the same; a material conveying belt 9 is horizontally arranged in the cavity, the height of the upper surface of the conveying belt 9 from the top of the cavity is 0.52a, and the width of the conveying belt 9 is 0.95a; the transport speed of the conveyor belt 9 was 2na/min.
In this embodiment: the n=3.
Mounting position of each wave source on the respective rectangular flat plate:
the mounting position of the roof wave source 8 on the roof 1 is as shown in fig. 2: the 1 st roof wave source 8 is located at a/2 from the start edge of the roof 1, the 2 nd roof wave source 8 is located at 2a+a/2 from the start edge of the roof 1, and the 3 rd roof wave source 8 is located at 4a/2 from the start edge of the roof 1. The center O1 of the mounting surface of each roof wave source 8 is a/4 from the upper edge line of the roof 1, and the long side of the mounting surface of each roof wave source 8 is perpendicular to the upper edge line of the roof 1.
The mounting position of the left-side plate wave source 2 on the left-side plate 3 is as shown in fig. 2: the 1 st left-side plate wave source 2 is positioned at a/2 from the starting edge of the left-side plate 3, the 2 nd left-side plate wave source 2 is positioned at 2a+a/2 from the starting edge of the left-side plate 3, and the 3 rd left-side plate wave source 2 is positioned at 4a+a/2 from the starting edge of the left-side plate 3. The distance between the center O2 of the installation surface of each left side plate wave source 2 and the upper edge line of the left side plate 3 is a/4, and the included angle theta between the long edge of the installation surface of each left side plate wave source 2 and the upper edge line of the left side plate 3 is 0 degree.
The installation position of the bottom plate wave source 4 on the bottom plate 5 is as shown in fig. 2: the 1 st floor wave source 4 is located at 3a/2 from the start edge of the floor 5, the 2 nd floor wave source 4 is located at 2a+3a/2 from the start edge of the floor 5, and the 3 rd floor wave source 4 is located at 4a+3a/2 from the start edge of the floor 5. The center O3 of the installation surface of each floor wave source 4 is a/4 from the upper edge line of the floor 5, and the long side of the installation surface of each floor wave source 4 is parallel to the upper edge line of the floor 5.
The installation position of the right-side plate wave source 6 on the right-side plate 7 is as shown in fig. 2: the 1 st right-side plate wave source 6 is located at 3a/2 from the start edge of the right-side plate 7, the 2 nd right-side plate wave source 6 is located at 2a+3a/2 from the start edge of the right-side plate 7, and the 3 rd right-side plate wave source 6 is located at 4a4+3a/2 from the start edge of the right-side plate 7. The distance between the installation surface center O4 of each right side plate wave source 6 and the upper edge line of the right side plate 7 is a/4, and the included angle beta between the long side of the installation surface of each right side plate wave source 6 and the upper edge line of the right side plate 7 is 90 degrees.
The long side of the rectangle l=a/3.
Compared with the prior art, the specific embodiment has the following beneficial effects:
1. according to the embodiment, based on simulation and experimental verification of an electric-magnetic-thermal-stress composite physical field in a cavity of a microwave treatment device, the layout optimization is carried out on the cavity and wave sources of a continuous microwave treatment device (hereinafter referred to as a continuous microwave treatment device) for strengthening the grinding and leaching efficiency of vanadium shale, n wave sources corresponding to the cavity and the wave sources are respectively and regularly arranged at different positions and different angles of the outer walls of 4 flat plates of the cavity of the continuous microwave treatment device, so that the optimal distribution of the composite physical field in the cavity is realized, and the induction strengthening effect of microwaves on heterogeneous dissociation of the vanadium shale is fully exerted; in addition, the multi-wave source continuous treatment mode can realize that the vanadium shale is subjected to continuous multi-dimensional irradiation in the running process in the cavity, so that the treatment effect is improved and the treatment period is shortened. The test proves that: the device can realize the high-efficiency pretreatment of the vanadium shale within 1-2 min and below the combustion temperature of carbon, so that the grindability (according to the crushing rate) of the vanadium shale is improved by more than 200%, and meanwhile, the ore grinding energy consumption (including the microwave pretreatment energy consumption) is reduced by more than 40%, and the device has the advantages of short treatment period, good treatment effect and low energy consumption.
2. The specific embodiment aims at the special mineral characteristics of the vanadium shale, and on the basis of the simulation of a composite physical field, the microwave cavity and n stages (a first wave source of 4 flat plates is called a first stage, a second wave source of 4 flat plates is called a second stage, … …, and so on), and an nth wave source of 4 flat plates is called an nth stage) wave source and a special design of a continuous transmission device are adopted, so that in the pretreatment process, the microwave qualitative dynamic effect of the multistage (wave source) is continuously excited, the treated vanadium shale continuously and alternately receives the action of the n-stage electric-magnetic-thermal-stress composite physical field in the cavity, the effective damage to the lattice structure of the vanadium-containing mineral in the vanadium shale is greatly enhanced, the vanadium leaching rate is improved by more than 15% under the same leaching condition, and the remarkable strengthening effect is achieved on the vanadium leaching rate.
3. In the vanadium shale microwave treatment process, the continuous microwave treatment device can be arranged between the vanadium shale crushing procedure and the ore grinding procedure due to the short treatment period, low overall temperature and no carbon emission, and is suitable for a vanadium extraction system of the vanadium shale full wet method.
4. According to the method, a multistage continuous distribution mechanism of an n-level wave source is combined with a material conveying belt (9), irradiation power, irradiation time and conveying speed of the material conveying belt (9) of the n-level wave source are adjusted, optimized matching is achieved, on one hand, operation steps are simplified, batch continuous processing of vanadium shale can be achieved under simple operation, on the other hand, as the processed vanadium shale continuously passes through n electric-magnetic-thermal-stress composite physical fields, radiation non-uniformity in a plurality of physical fields in a cavity of a microwave device is greatly reduced through alternate radiation, high grindability and leaching efficiency of the vanadium shale can be achieved in a short time, and production efficiency is high.
Therefore, the method has the characteristics of short treatment period, low energy consumption, no carbon emission, high grindability of the vanadium shale, good leaching rate strengthening effect, simple continuous operation and high production efficiency, and is suitable for a vanadium extraction system of the vanadium shale by the all-wet method.

Claims (2)

1. The continuous microwave treatment device for strengthening the grinding and leaching efficiency of the vanadium shale is characterized by comprising the following structure:
the continuous microwave treatment device consists of a cavity body formed by 4 rectangular flat plates, 4n wave sources and a material conveying belt (9); the length multiplied by the width=2na×a of the rectangular flat plates, each rectangular flat plate is uniformly provided with n wave sources respectively, 4n wave sources are the same, and n is a natural number of 2-10; a material conveying belt (9) is horizontally arranged in the cavity, the height of the upper surface of the conveying belt (9) from the top of the cavity is 0.52-0.58 a, and the width of the conveying belt (9) is 0.9-0.95 a;
the four rectangular flat plates are respectively a top plate (1), a left side plate (3), a bottom plate (5) and a right side plate (7), and the top plate (1), the left side plate (3), the bottom plate (5) and the right side plate (7) are respectively provided with a top plate wave source (8), a left side plate wave source (2), a bottom plate wave source (4) and a right side plate wave source (6) correspondingly in sequence; each wave source consists of 1 magnetron and 1 waveguide, and each wave source is rectangular on the mounting surface of the rectangular flat plate;
mounting position of each wave source on the respective rectangular flat plate:
for simplicity of description, it is assumed that the cavity is unfolded to a plane by separating the cavity from the intersection of the top plate (1) and the right side plate (7); and the following steps: the inlet end of the material is the initial edge of each rectangular flat plate, the parting line of the top plate (1) is the upper edge of the cavity expansion surface, namely, the first horizontal line of the cavity expansion surface is the upper edge of the top plate (1), the second horizontal line of the cavity expansion surface is the upper edge of the left side plate (3), the third horizontal line of the cavity expansion surface is the upper edge of the bottom plate (5), and the fourth horizontal line of the cavity expansion surface is the upper edge of the right side plate (7);
the installation position of the top plate wave source (8) on the top plate (1): the 1 st roof wave source (8) is positioned at a/2 from the starting edge of the roof (1), the 2 nd roof wave source (8) is positioned at 2a (2-1) +a/2 from the starting edge of the roof (1), the 3 rd roof wave source (8) is positioned at 2a (3-1) +a/2 from the starting edge of the roof (1), … …, and so on, the nth roof wave source (8) is positioned at 2a (n-1) +a/2 from the starting edge of the roof (1); the distance between the mounting surface center O1 of each top plate wave source (8) and the upper edge line of the top plate (1) is a/4, and the long side of the mounting surface of each top plate wave source (8) is perpendicular to the upper edge line of the top plate (1);
the left side plate wave source (2) is arranged at the mounting position of the left side plate (3): the 1 st left side plate wave source (2) is positioned at a/2 from the starting edge of the left side plate (3), the 2 nd left side plate wave source (2) is positioned at 2a (2-1) +a/2 from the starting edge of the left side plate (3), the 3 rd left side plate wave source (2) is positioned at 2a (3-1) +a/2 from the starting edge of the left side plate (3), … …, and so on, the nth left side plate wave source (2) is positioned at 2a (n-1) +a/2 from the starting edge of the left side plate (3); the distance between the installation surface center O2 of each left side plate wave source (2) and the upper edge line of the left side plate (3) is a/4, and the included angle theta between the long side of the installation surface of each left side plate wave source (2) and the upper edge line of the left side plate (3) is 0-45 degrees;
the installation position of the bottom plate wave source (4) on the bottom plate (5): the 1 st floor wave source (4) is positioned at 3a/2 from the starting edge of the floor (5), the 2 nd floor wave source (4) is positioned at 2a (2-1) +3a/2 from the starting edge of the floor (5), the 3 rd floor wave source (4) is positioned at 2a (3-1) +3a/2 from the starting edge of the floor (5), … …, and so on, the nth floor wave source (4) is positioned at 2a (n-1) +3a/2 from the starting edge of the floor (5); the distance between the mounting surface center O3 of each bottom plate wave source (4) and the upper edge line of the bottom plate (5) is a/4, and the long side of the mounting surface of each bottom plate wave source (4) is parallel to the upper edge line of the bottom plate (5);
the right side plate wave source (6) is arranged at the installation position of the right side plate (7): the 1 st right side plate wave source (6) is positioned at 3a/2 from the starting edge of the right side plate (7), the 2 nd right side plate wave source (6) is positioned at 2a (2-1) +3a/2 from the starting edge of the right side plate (7), the 3 rd right side plate wave source (6) is positioned at 2a (3-1) +3a/2 from the starting edge of the right side plate (7), … …, and so on, the nth right side plate wave source (6) is positioned at 2a (n-1) +3a/2 from the starting edge of the right side plate (7); the distance between the installation surface center O4 of each right side plate wave source (6) and the upper edge line of the right side plate (7) is a/4, and the included angle beta between the long side of the installation surface of each right side plate wave source (6) and the upper edge line of the right side plate (7) is 90-theta.
2. The continuous microwave treatment device for enhancing the grinding and leaching efficiency of vanadium shale according to claim 1, wherein the long side l=a/6-a/3 of the rectangle.
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Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2367621Y (en) * 1999-04-09 2000-03-08 电子科技大学 Continuous microwave mineral-roasting apparatus
CN101068939A (en) * 2004-09-30 2007-11-07 技术资源有限公司 Microwave treatment for mineral
CN101550493A (en) * 2009-05-07 2009-10-07 西安建筑科技大学 Microwave-assisting method for fast leaching vanadium in stone coal vanadium ore
CN102065591A (en) * 2010-11-16 2011-05-18 成都纽曼和瑞微波技术有限公司 High-power combined microwave loop cavity
CN104180649A (en) * 2014-07-08 2014-12-03 昆明理工大学 Dynamic high-temperature continuous microwave roasting equipment
CN105331810A (en) * 2015-10-13 2016-02-17 长沙矿冶研究院有限责任公司 Microwave heating device and method for leaching vanadium from stone coal through sulfuric acid
CN106237957A (en) * 2016-08-31 2016-12-21 电子科技大学 A kind of conveying type quasi-salt free ligands ripple microwave reactor continuously
CN108106384A (en) * 2017-12-15 2018-06-01 湖南景远微波科技有限公司 A kind of continuously adjustable molecular sieve tunnel type micro wave drying device of power
CN210420090U (en) * 2019-08-23 2020-04-28 中国科学院过程工程研究所 Stone coal navajoite curing production facility
CN112831664A (en) * 2021-03-22 2021-05-25 云南民族大学 Manufacturing method of microwave-enhanced leaching device for leaching precious metals by using ionic liquid
CN113528813A (en) * 2021-08-04 2021-10-22 攀枝花金原科技有限公司 Preparation method of iron powder and vanadium-rich titanium material

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2367621Y (en) * 1999-04-09 2000-03-08 电子科技大学 Continuous microwave mineral-roasting apparatus
CN101068939A (en) * 2004-09-30 2007-11-07 技术资源有限公司 Microwave treatment for mineral
CN101550493A (en) * 2009-05-07 2009-10-07 西安建筑科技大学 Microwave-assisting method for fast leaching vanadium in stone coal vanadium ore
CN102065591A (en) * 2010-11-16 2011-05-18 成都纽曼和瑞微波技术有限公司 High-power combined microwave loop cavity
CN104180649A (en) * 2014-07-08 2014-12-03 昆明理工大学 Dynamic high-temperature continuous microwave roasting equipment
CN105331810A (en) * 2015-10-13 2016-02-17 长沙矿冶研究院有限责任公司 Microwave heating device and method for leaching vanadium from stone coal through sulfuric acid
CN106237957A (en) * 2016-08-31 2016-12-21 电子科技大学 A kind of conveying type quasi-salt free ligands ripple microwave reactor continuously
CN108106384A (en) * 2017-12-15 2018-06-01 湖南景远微波科技有限公司 A kind of continuously adjustable molecular sieve tunnel type micro wave drying device of power
CN210420090U (en) * 2019-08-23 2020-04-28 中国科学院过程工程研究所 Stone coal navajoite curing production facility
CN112831664A (en) * 2021-03-22 2021-05-25 云南民族大学 Manufacturing method of microwave-enhanced leaching device for leaching precious metals by using ionic liquid
CN113528813A (en) * 2021-08-04 2021-10-22 攀枝花金原科技有限公司 Preparation method of iron powder and vanadium-rich titanium material

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