CN114800899A - Monocrystalline silicon wafer color difference improving method and system, storage medium and electronic equipment - Google Patents
Monocrystalline silicon wafer color difference improving method and system, storage medium and electronic equipment Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 51
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 66
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- 239000002002 slurry Substances 0.000 claims description 5
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Abstract
The invention provides a method and a system for improving the chromatic aberration of a monocrystalline silicon wafer, a storage medium and electronic equipment. The scheme comprises the steps of extracting the current supply and return line period, the cutting direction and the cutting position, and calculating a color difference index; obtaining the current line winding speed, the current line unwinding speed and the current cutting tension, and calculating an action risk index and a silicon rod line breaking position in real time; obtaining a color difference index, updating the color difference index according to the actually measured data value, and calculating a new supply and return line period, a new cutting direction, a new cutting position, a take-up speed index updating value, a pay-off speed index updating value and a cutting tension updating value; according to the wire breakage position of the silicon rod, flattening and cutting off the steel wire; setting steel wire control parameters; and acquiring an updated value of the take-up speed index, an updated value of the pay-off speed index and an updated value of the cutting tension, and performing automatic control on take-up and pay-off of the steel wire. According to the scheme, the learning and adjusting period position, the cutting direction and the position are automatically adjusted in the crystal bar cutting process, so that the chromatic aberration of the monocrystalline silicon wafer is improved, and the quality of the silicon wafer is improved.
Description
Technical Field
The invention relates to the technical field of photovoltaic cutting, in particular to a method and a system for improving chromatic aberration of a monocrystalline silicon wafer, a storage medium and electronic equipment.
Background
With the worldwide control of carbon emissions, the new energy industry is also rapidly developing. Among them, the photovoltaic industry is developing rapidly as a main force of clean energy. Silicon wafer dicing is an important part of the photovoltaic industry chain. The wire cutting technology has the advantages of high processing efficiency and high material utilization rate, is suitable for the trend of large diameter, and has become the mainstream mode of processing the silicon single crystal slices, so the wire cutting technology is mostly adopted for silicon slice cutting at the present stage.
Before the technology of the invention, in the actual processing of the existing wire cutting technology, due to the complexity of the multi-wire cutting processing process, the problems of unstable cutting quality, high occurrence rate of wire breakage accidents and the like in the cutting process, the color difference zone appears on the surface of the silicon chip, and the quality of the silicon chip is reduced.
Disclosure of Invention
In view of the above problems, the invention provides a method, a system, a storage medium and an electronic device for improving the chromatic aberration of a monocrystalline silicon wafer, which can improve the chromatic aberration of the monocrystalline silicon wafer and improve the quality of the silicon wafer by automatically adjusting the learning and adjusting the cycle position, the cutting direction and the position in the crystal bar cutting process.
According to a first aspect of the embodiments of the present invention, a method for improving chromatic aberration of a monocrystalline silicon wafer is provided.
In one or more embodiments, preferably, the method for improving chromatic aberration of a single-crystal silicon wafer includes:
extracting the current supply and return line period, the cutting direction and the cutting position, and calculating a color difference index;
obtaining the current line winding speed, the current line unwinding speed and the current cutting tension, and calculating an action risk index and a silicon rod line breaking position in real time;
acquiring the color difference index, updating the color difference index according to the measured data value, and calculating a new supply and return line period, a new cutting direction, a new cutting position, a take-up speed index updating value, a pay-off speed index updating value and a cutting tension updating value;
according to the silicon rod wire breaking position, flattening and cutting off steel wires;
acquiring the new supply and return line period, the new cutting direction and the new cutting position, and setting steel wire control parameters;
and acquiring the updated value of the take-up speed index, the updated value of the pay-off speed index and the updated value of the cutting tension, and performing automatic control on take-up and pay-off of the steel wire.
In one or more embodiments, preferably, the extracting a current supply and return line period, a cutting direction, and a cutting position, and calculating a color difference index specifically includes:
extracting a current supply and return line period as a supply and return line period index;
extracting the current cutting direction as a cutting direction index;
extracting a current cutting position as a cutting position index;
setting a first coefficient, a second coefficient, a third coefficient and a fourth coefficient;
calculating the color difference index in real time by using a first calculation formula;
the first calculation formula is:
S＝k 1 Z+k 2 Q F +k 3 Q W +k 4
wherein S is the color difference index, k 1 Is the first coefficient, k 2 Is the second coefficient, k 3 Is the third coefficient, k 4 Is a fourth coefficient, Z is the cycle index of the supply and return lines, Q F Is the index of the cutting direction, Q W Is the cutting position index.
In one or more embodiments, preferably, the obtaining of the current take-up speed, pay-off speed and cutting tension, and the calculating of the action risk index and the silicon rod breakage position in real time specifically include:
extracting the current take-up speed as a take-up speed index;
extracting the current paying-off speed as a paying-off speed index;
extracting the current cutting tension as a cutting tension index;
calculating an action risk index at each position by using a second calculation formula;
extracting the silicon rod broken line position by using a third calculation formula;
the second calculation formula is:
F＝k 5 V S +k 6 V F +k 7 L Z
wherein F is an action risk index, V S Is the take-up speed index, V F Is the pay-off speed index, L Z Is the cutting tension index, k 5 Is the fifth coefficient, k 6 Is the sixth coefficient, k 7 Is a seventh coefficient;
the third calculation formula is:
D＝Max(F x )
wherein D is the silicon rod disconnection position, and Max () is a maximum action risk extraction function.
In one or more embodiments, preferably, the obtaining the color difference index, updating the color difference index according to the measured data value, and calculating a new supply and return line period, a new cutting direction, a new cutting position, an updated value of a take-up speed index, an updated value of a pay-off speed index, and an updated value of a cutting tension specifically include:
acquiring the color difference index and the actually measured data value;
obtaining a first coefficient, a second coefficient, a third coefficient and a fourth coefficient by using a fourth calculation formula, and calling the first calculation formula to update and calculate the color difference index;
judging whether the updated color difference index meets a fifth calculation formula, if so, sending an optimized updating cutting command, and if not, sending an optimized updating take-up and pay-off command;
after the cutting command is received, calculating the new supply loop line period, the new cutting direction and the new cutting position by using a sixth calculation formula;
after the wire take-up and pay-off command is received, calculating an updated value of the take-up speed index, an updated value of the pay-off speed index and an updated value of the cutting tension by using a seventh calculation formula;
the fourth calculation formula is:
wherein S is t Is an actually measured value, (S, S) t ) e.P is a set consisting of all actually measured data values and all the color difference indexes, and Argmin () is a function corresponding to a first coefficient, a second coefficient, a third coefficient and a fourth coefficient when the actually measured data values and the color difference indexes calculate the minimum value in a one-to-one correspondence manner;
the fifth calculation formula is:
S＞T
wherein T is a test margin;
the sixth calculation formula is:
wherein Q is 1 Period, Q, for the new supply loop 2 Is the new cutting direction, Q 3 For the new cutting position, n 1 、n 2 、n 3 Sequentially comprises a first replacement coefficient, a second replacement coefficient and a third replacement coefficient;
the seventh calculation formula is:
wherein, V S1 Updating the value of the take-up speed index, V F1 Is that it isPay-off speed index update value, L Z1 Updating the value for the cutting tension.
In one or more embodiments, preferably, the flattening and shearing off the steel wire according to the silicon rod wire breakage position specifically includes:
obtaining the wire breakage position of the silicon rod;
removing residual steel wires on the guide wheel to enable the steel wires at the broken line to be flat, wherein the flat state is the condition without jumper wires, overlapping wires and cross wires;
cleaning the steel wire with alcohol, and automatically cutting the steel wire.
In one or more embodiments, preferably, the acquiring the new supply and return line period, the new cutting direction, and the new cutting position, and setting steel wire control parameters specifically include:
acquiring the new supply loop line period, the new cutting direction and the new cutting position;
shearing the end face of the steel wire to be flat, and aligning the current installation position according to the period of the new supply and return line, the new cutting direction and the new cutting position;
checking whether the upsetting force, the welding current, the normalizing current and the normalizing time are preset positions or not;
after the silicon rod disconnection position occurs, changing the silicon rod disconnection position into the new supply and return line period, the new cutting direction and the new cutting position;
and after the tension of the take-up and pay-off line is modified into the original cutting tension, the operation is started after the new cutting position is reset.
In one or more embodiments, preferably, the obtaining the updated value of the take-up speed index, the updated value of the pay-off speed index, and the updated value of the cutting tension to perform automatic wire unwinding and unwinding control specifically includes:
acquiring the take-up speed index updating value, the pay-off speed index updating value and the cutting tension updating value, and keeping the slurry spraying from stopping;
carrying out constant-speed wire rewinding according to the wire rewinding speed index updating value, and setting the cutting tension of the steel wire as the cutting tension updating value;
and paying off the steel wire according to the paying off speed index updating value, and starting cutting.
According to a second aspect of the embodiments of the present invention, a system for improving chromatic aberration of a monocrystalline silicon wafer is provided.
In one or more embodiments, preferably, the system for improving chromatic aberration of a single-crystal silicon wafer comprises:
the color difference acquisition module is used for extracting the current supply and return line period, the cutting direction and the cutting position and calculating a color difference index;
the cutting learning module is used for obtaining the current line winding speed, the current line unwinding speed and the current cutting tension and calculating an action risk index and a silicon rod line breaking position in real time;
the wire breakage risk updating module is used for acquiring the color difference index, updating the color difference index according to the actually measured data value, and calculating a new supply and return wire period, a new cutting direction, a new cutting position, a wire take-up speed index updating value, a wire release speed index updating value and a cutting tension updating value;
the wire drawing control module is used for flattening and cutting off steel wires according to the wire breaking position of the silicon rod;
the welding line control module is used for acquiring the new supply and return line period, the new cutting direction and the new cutting position and setting steel wire control parameters;
and the take-up and pay-off control module is used for acquiring the updated take-up speed index value, the updated pay-off speed index value and the updated cutting tension value and performing automatic take-up and pay-off control on the steel wire.
According to a third aspect of embodiments of the present invention, there is provided a computer-readable storage medium having stored thereon computer program instructions which, when executed by a processor, implement the method according to any one of the first aspect of embodiments of the present invention.
According to a fourth aspect of embodiments of the present invention, there is provided an electronic device, comprising a memory and a processor, the memory being configured to store one or more computer program instructions, wherein the one or more computer program instructions are executed by the processor to implement the method of any one of the first aspect of embodiments of the present invention.
The technical scheme provided by the embodiment of the invention can have the following beneficial effects:
according to the invention, by collecting all current historical collected data of chromatic aberration, the quality of the silicon wafer in the collected data can be automatically learned, and the chromatic aberration of the silicon wafer can be automatically reduced.
The invention automatically prompts the reliability of the silicon chip by evaluating the wire breakage risk and adjusting the cutting state in the current recovery process.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
The technical solution of the present invention is further described in detail by the accompanying drawings and embodiments.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a flow chart of a method for improving chromatic aberration of a single crystal silicon wafer according to an embodiment of the present invention.
Fig. 2 is a flowchart of extracting a current supply and return line period, a cutting direction and a cutting position, and calculating a chromatic aberration index in a method for improving chromatic aberration of a monocrystalline silicon wafer according to an embodiment of the present invention.
Fig. 3 is a flowchart of calculating an action risk index and a silicon rod breakage position in real time by obtaining a current take-up speed, a current pay-off speed and a current cutting tension in the method for improving the color difference of the monocrystalline silicon wafer according to the embodiment of the invention.
Fig. 4 is a flowchart of obtaining the color difference index, updating the color difference index according to the measured data value, and calculating a new supply and return line period, a new cutting direction, a new cutting position, a new take-up speed index updating value, a pay-off speed index updating value, and a cutting tension updating value in the method for improving the color difference of the monocrystalline silicon wafer according to the embodiment of the present invention.
Fig. 5 is a flowchart of flattening and cutting steel wires according to the wire breakage position of the silicon rod in a method for improving color difference of a monocrystalline silicon wafer according to an embodiment of the invention.
Fig. 6 is a flowchart of obtaining the new supply return line period, the new cutting direction, and the new cutting position, and setting steel wire control parameters in the method for improving chromatic aberration of a monocrystalline silicon wafer according to an embodiment of the present invention.
Fig. 7 is a flowchart for automatically controlling take-up and pay-off of a wire in a method for improving chromatic aberration of a monocrystalline silicon wafer according to an embodiment of the present invention, in which the updated value of the take-up speed index, the updated value of the pay-off speed index, and the updated value of the cutting tension are obtained.
FIG. 8 is a block diagram of a system for improving chromatic aberration of a single-crystal silicon wafer according to an embodiment of the present invention.
Fig. 9 is a block diagram of an electronic device in one embodiment of the invention.
Detailed Description
In some of the flows described in the present specification and claims and in the above figures, a number of operations are included that occur in a particular order, but it should be clearly understood that these operations may be performed out of order or in parallel as they occur herein, with the order of the operations being indicated as 101, 102, etc. merely to distinguish between the various operations, and the order of the operations by themselves does not represent any order of performance. Additionally, the flows may include more or fewer operations, and the operations may be performed sequentially or in parallel. It should be noted that, the descriptions of "first", "second", etc. in this document are used for distinguishing different messages, devices, modules, etc., and do not represent a sequential order, nor limit the types of "first" and "second" to be different.
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
With the worldwide control of carbon emissions, the new energy industry is also rapidly developing. Among them, the photovoltaic industry is developing rapidly as a main force of clean energy. Silicon wafer dicing is an important part of the photovoltaic industry chain. The wire cutting technology has the advantages of high processing efficiency and high material utilization rate, is suitable for the trend of large diameter, and has become the mainstream mode of processing the silicon single crystal slices, so the wire cutting technology is mostly adopted for silicon slice cutting at the present stage.
Before the technology of the invention, in the actual processing of the existing wire cutting technology, due to the complexity of the multi-wire cutting processing process, the problems of unstable cutting quality, high occurrence rate of wire breakage accidents and the like in the cutting process, the color difference zone appears on the surface of the silicon chip, and the quality of the silicon chip is reduced.
The embodiment of the invention provides a method and a system for improving chromatic aberration of a monocrystalline silicon wafer, a storage medium and electronic equipment. According to the scheme, the learning and adjusting period position, the cutting direction and the position are automatically adjusted in the crystal bar cutting process, so that the chromatic aberration of the monocrystalline silicon wafer is improved, and the quality of the silicon wafer is improved.
According to a first aspect of the embodiments of the present invention, a method for improving chromatic aberration of a monocrystalline silicon wafer is provided.
FIG. 1 is a flow chart of a method for improving chromatic aberration of a single crystal silicon wafer according to an embodiment of the present invention.
In one or more embodiments, preferably, the method for improving chromatic aberration of a single-crystal silicon wafer includes:
s101, extracting the current supply and return line period, cutting direction and cutting position, and calculating a chromatic aberration index;
s102, obtaining the current line winding speed, the current line unwinding speed and the current cutting tension, and calculating an action risk index and a silicon rod line breaking position in real time;
s103, obtaining the color difference index, updating the color difference index according to the actually measured data value, and calculating a new supply return line period, a new cutting direction, a new cutting position, a take-up speed index updating value, a pay-off speed index updating value and a cutting tension updating value;
s104, according to the wire breakage position of the silicon rod, flattening and cutting off steel wires;
s105, acquiring the new supply and return line period, the new cutting direction and the new cutting position, and setting steel wire control parameters;
s106, obtaining the updated value of the take-up speed index, the updated value of the pay-off speed index and the updated value of the cutting tension, and performing automatic steel wire take-up and pay-off control.
In the embodiment of the invention, the learning and the adjustment are carried out in real time during the crystal bar processing process, the quality of the silicon wafer can be automatically improved after the adjustment, and the color difference is smaller after the improvement, and the risk of wire breakage is reduced.
Fig. 2 is a flowchart of extracting a current supply and return line period, a cutting direction and a cutting position, and calculating a chromatic aberration index in a method for improving chromatic aberration of a monocrystalline silicon wafer according to an embodiment of the present invention.
As shown in fig. 2, in one or more embodiments, preferably, the extracting a current supply and return line period, a cutting direction, and a cutting position, and calculating a color difference index specifically includes:
s201, extracting a current supply and return line period as a supply and return line period index;
s202, extracting the current cutting direction as a cutting direction index;
s203, extracting the current cutting position as a cutting position index;
s204, setting a first coefficient, a second coefficient, a third coefficient and a fourth coefficient;
s205, calculating the real-time color difference index by using a first calculation formula;
the first calculation formula is:
S＝k 1 Z+k 2 Q F +k 3 Q W +k 4
wherein S is the color difference index, k 1 Is the first coefficient, k 2 Is the second coefficient, k 3 Is the third coefficient, k 4 Is a fourth coefficient, Z is the cycle index of the supply and return lines, Q F Is the index of the cutting direction, Q W Is the cutting position index.
In the embodiment of the invention, in order to effectively inhibit the generation of color difference, in the actual implementation process, the calculation of the color difference index is automatically carried out, and all the acquired first coefficient, second coefficient, third coefficient and fourth coefficient are preset empirically in the initial operation stage of the whole method, but the first coefficient, second coefficient, third coefficient and fourth coefficient are continuously updated along with the online measurement and adjustment for multiple times.
Fig. 3 is a flowchart of calculating an action risk index and a silicon rod breakage position in real time by obtaining a current take-up speed, a current pay-off speed and a current cutting tension in the method for improving the color difference of the monocrystalline silicon wafer according to the embodiment of the invention.
As shown in fig. 3, in one or more embodiments, preferably, the obtaining the current take-up speed, pay-off speed and cutting tension, and performing calculation of the action risk index and the silicon rod breakage position in real time includes:
s301, extracting the current take-up speed as a take-up speed index;
s302, extracting the current paying-off speed as a paying-off speed index;
s303, extracting the current cutting tension as a cutting tension index;
s304, calculating the action risk index at each position by using a second calculation formula;
s305, extracting the broken line position of the silicon rod by using a third calculation formula;
the second calculation formula is:
F＝k 5 V S +k 6 V F +k 7 L Z
wherein F is an action risk index, V S Is the take-up speed index, V F Is the pay-off speed index, L Z Is the cutting tension index, k 5 Is the fifth coefficient, k 6 Is the sixth coefficient, k 7 Is a seventh coefficient;
the third calculation formula is:
D＝Max(F x )
wherein D is the silicon rod disconnection position, and Max () is a maximum action risk extraction function.
In the embodiment of the invention, in order to depend on the current action risk in the following calculation, the paying-off speed, the taking-up speed and the cutting tension at each position need to be extracted in real time, online risk calculation is carried out according to a preset operation formula, when the action risk index is maximum, the predicted possible broken silicon rod line position is corresponded, the corresponding three coefficients are preset, and the final predicted value of the broken silicon rod line position is gradually closer to the actual broken silicon rod line position in the learning process.
Fig. 4 is a flowchart of obtaining the color difference index, updating the color difference index according to the measured data value, and calculating a new supply and return line period, a new cutting direction, a new cutting position, a new take-up speed index updating value, a pay-off speed index updating value, and a cutting tension updating value in the method for improving the color difference of the monocrystalline silicon wafer according to the embodiment of the present invention.
As shown in fig. 4, in one or more embodiments, preferably, the obtaining the color difference index, updating the color difference index according to the measured data value, and calculating a new supply-return line period, a new cutting direction, a new cutting position, an updated value of the take-up speed index, an updated value of the pay-off speed index, and an updated value of the cutting tension specifically include:
s401, acquiring the color difference index and the actually measured data value;
s402, obtaining a first coefficient, a second coefficient, a third coefficient and a fourth coefficient by using a fourth calculation formula, and calling the first calculation formula to update and calculate the color difference index;
s403, judging whether the updated color difference index meets a fifth calculation formula, if so, sending an optimized updating cutting command, and if not, sending an optimized updating take-up and pay-off command;
s404, after the cutting command is received, calculating the period of the new supply and return line, the new cutting direction and the new cutting position by using a sixth calculation formula;
s405, after the wire take-up and pay-off command is received, calculating an updated value of the wire take-up speed index, an updated value of the wire pay-off speed index and an updated value of the cutting tension by using a seventh calculation formula;
the fourth calculation formula is:
wherein S is t Is an actually measured value, (S, S) t ) e.P is a set consisting of all actually measured data values and all the color difference indexes, and Argmin () is a function corresponding to a first coefficient, a second coefficient, a third coefficient and a fourth coefficient when the actually measured data values and the color difference indexes calculate the minimum value in a one-to-one correspondence manner;
the fifth calculation formula is:
S＞T
wherein T is a test margin;
the sixth calculation formula is:
wherein Q is 1 Period, Q, for the new supply loop 2 Is the new cutting direction, Q 3 For the new cutting position, n 1 、n 2 、n 3 Sequentially comprises a first replacement coefficient, a second replacement coefficient and a third replacement coefficient;
the seventh calculation formula is:
wherein, V S1 Updating the value of the take-up speed index, V F1 Updating the value of the payoff speed index, L Z1 Updating the value for the cutting tension.
In the embodiment of the invention, the parameter values of the real-time cutting and pay-off processes are calculated and obtained through the fifth, sixth and seventh calculation formulas, and the updating processes consider the change condition of the color difference index on one hand and the current risk index on the other hand, so that the online updating value is obtained in real time after comparing all risks and color differences in the condition.
Fig. 5 is a flowchart of flattening and cutting steel wires according to the wire breakage position of the silicon rod in a method for improving color difference of a monocrystalline silicon wafer according to an embodiment of the invention.
As shown in fig. 5, in one or more embodiments, preferably, the flattening and cutting the steel wire according to the silicon rod wire breakage position specifically includes:
s501, obtaining a silicon rod disconnection position;
s502, removing residual steel wires on the guide wheel to enable the steel wires at the broken line to be flat, wherein the flat state is the condition without jumping, overlapping and crossing lines;
s503, cleaning the steel wire by using alcohol, and automatically cutting the steel wire.
In the embodiment of the invention, the current wire breakage position is automatically carried out, the residual steel wire is automatically removed, the steel wire is cleaned, and then the steel wire is cut to be flat.
Fig. 6 is a flowchart of obtaining the new supply return line period, the new cutting direction, and the new cutting position, and setting steel wire control parameters in the method for improving chromatic aberration of a monocrystalline silicon wafer according to an embodiment of the present invention.
As shown in fig. 6, in one or more embodiments, preferably, the acquiring the new feeding and returning line period, the new cutting direction, and the new cutting position, and setting the steel wire control parameters specifically include:
s601, acquiring the new supply loop line period, the new cutting direction and the new cutting position;
s602, shearing the end face of the steel wire to be flat, and aligning the current installation position according to the period of the new supply return wire, the new cutting direction and the new cutting position;
s603, checking whether the upsetting force, the welding current, the normalizing current and the normalizing time are preset positions or not;
s604, after the silicon rod wire breakage position occurs, changing the silicon rod wire breakage position into the new supply and return wire period, the new cutting direction and the new cutting position;
and S605, after the tension of the take-up and pay-off wire is modified into the original cutting tension, the operation is started after the new cutting position is set again.
In the embodiment of the invention, new installation parameter setting is automatically completed in the previously learned new supply and return line period, new cutting direction and new cutting position, and in addition, the machine is restarted.
Fig. 7 is a flowchart for automatically controlling take-up and pay-off of a wire in a method for improving chromatic aberration of a monocrystalline silicon wafer according to an embodiment of the present invention, in which the updated value of the take-up speed index, the updated value of the pay-off speed index, and the updated value of the cutting tension are obtained.
As shown in fig. 7, in one or more embodiments, preferably, the obtaining the updated value of the take-up speed index, the updated value of the pay-off speed index and the updated value of the cutting tension to perform an automatic wire take-up and pay-off control includes:
s701, acquiring the updated value of the take-up speed index, the updated value of the pay-off speed index and the updated value of the cutting tension, and keeping the slurry spraying from stopping;
s702, carrying out constant-speed wire rewinding according to the wire rewinding speed index updating value, and setting the cutting tension of the steel wire as the cutting tension updating value;
and S703, paying off the steel wire according to the updated value of the paying-off speed index, and starting cutting.
In the embodiment of the invention, the slurry is automatically wound and unwound on the basis of obtaining the updated value of the winding speed index, the updated value of the unwinding speed index and the updated value of the cutting tension and keeping the slurry spraying not to stop, and the cutting is automatically started by updating the cutting tension.
According to a second aspect of the embodiments of the present invention, a system for improving chromatic aberration of a monocrystalline silicon wafer is provided.
FIG. 8 is a block diagram of a system for improving chromatic aberration of a single-crystal silicon wafer according to an embodiment of the present invention.
In one or more embodiments, preferably, the system for improving chromatic aberration of a single-crystal silicon wafer comprises:
the color difference acquisition module 801 is used for extracting the current supply and return line period, the cutting direction and the cutting position and calculating a color difference index;
the cutting learning module 802 is used for obtaining the current line winding speed, line unwinding speed and cutting tension, and calculating an action risk index and a silicon rod line breaking position in real time;
a wire breakage risk updating module 803, configured to obtain the color difference index, update the color difference index according to an actually measured data value, and calculate a new supply and return wire cycle, a new cutting direction, a new cutting position, an updated value of a take-up speed index, an updated value of a wire breakage speed index, and an updated value of a cutting tension;
the wire drawing control module 804 is used for flattening and cutting steel wires according to the wire breaking position of the silicon rod;
a welding wire control module 805, configured to obtain the new supply loop cycle, the new cutting direction, and the new cutting position, and set steel wire control parameters;
and a take-up and pay-off control module 806 for obtaining the updated value of the take-up speed index, the updated value of the pay-off speed index and the updated value of the cutting tension to perform automatic take-up and pay-off control of the steel wire.
In the embodiment of the invention, on one hand, the current historical data can be learned in real time, and on the basis, the risk processing of the cutting and wire breaking process can be automatically carried out, so that the risk of the final cutting and wire breaking process can be minimized, and on the other hand, the cutting recovery process can be reduced, and the generation of silicon wafer color difference can be reduced.
According to a third aspect of embodiments of the present invention, there is provided a computer-readable storage medium having stored thereon computer program instructions which, when executed by a processor, implement the method according to any one of the first aspect of embodiments of the present invention.
According to a fourth aspect of the embodiments of the present invention, there is provided an electronic apparatus. Fig. 9 is a block diagram of an electronic device in one embodiment of the invention. The electronic device shown in fig. 9 is a general silicon wafer color difference improving apparatus. Referring to fig. 9, the electronic device may be a smart phone, a tablet computer, or the like. The electronic device 900 includes a processor 901 and memory 902. The processor 901 is electrically connected to the memory 902.
The processor 901 is a control center of the electronic device 900, connects various parts of the whole electronic device by using various interfaces and lines, and performs various functions of the electronic device and processes data by running or calling a computer program stored in the memory 902 and calling data stored in the memory 902, thereby performing overall monitoring of the electronic device.
In this embodiment, the processor 901 in the electronic device 900 loads instructions corresponding to one or more processes of the computer program into the memory 902 according to the following steps, and the processor 901 runs the computer program stored in the memory 902, so as to implement various functions, for example: extracting the current supply and return line period, the cutting direction and the cutting position, and calculating a color difference index; obtaining the current line winding speed, the current line unwinding speed and the current cutting tension, and calculating an action risk index and a silicon rod line breaking position in real time; acquiring the color difference index, updating the color difference index according to the measured data value, and calculating a new supply and return line period, a new cutting direction, a new cutting position, a take-up speed index updating value, a pay-off speed index updating value and a cutting tension updating value; according to the silicon rod wire breaking position, flattening and cutting off steel wires; acquiring the new supply and return line period, the new cutting direction and the new cutting position, and setting steel wire control parameters; and acquiring the updated value of the take-up speed index, the updated value of the pay-off speed index and the updated value of the cutting tension, and performing automatic control on take-up and pay-off of the steel wire.
In some implementations, the electronic device 900 can also include: a display 903, radio frequency circuitry 904, audio circuitry 905, a wireless fidelity module 906, and a power supply 907. The display 903, the radio frequency circuit 904, the audio circuit 905, the wireless fidelity module 906 and the power supply 907 are electrically connected to the processor 901, respectively.
The display 903 may be used to display information entered by or provided to the user as well as various graphical user interfaces, which may be composed of graphics, text, icons, video, and any combination thereof. The Display 903 may include a Display panel, which may be configured in the form of a Liquid Crystal Display (LCD), an Organic Light-Emitting Diode (OLED), or the like in some embodiments.
The radio frequency circuit 904 may be configured to transceive radio frequency signals to establish wireless communication with a network device or other electronic devices via wireless communication, and to transceive signals with the network device or other electronic devices.
The audio circuitry 905 may be used to provide an audio interface between a user and an electronic device through a speaker, microphone.
The wi-fi module 906, which may be used for short-range wireless transmission, may assist users in sending and receiving e-mail, browsing websites, accessing streaming media, etc., and provides wireless broadband internet access for users.
The power supply 907 may be used to power various components of the electronic device 900. In some embodiments, power supply 907 may be logically coupled to processor 901 via a power management system, such that functions of managing charging, discharging, and power consumption are performed via the power management system.
Although not shown in fig. 9, the electronic device 900 may further include a camera, a bluetooth module, etc., which are not described in detail herein.
The technical scheme provided by the embodiment of the invention can have the following beneficial effects:
according to the invention, by collecting all current historical collected data of chromatic aberration, the quality of the silicon wafer in the collected data can be automatically learned, and the chromatic aberration of the silicon wafer can be automatically reduced.
The invention automatically prompts the reliability of the silicon chip by evaluating the wire breakage risk and adjusting the cutting state in the current recovery process.
As will be appreciated by one skilled in the art, embodiments of the present invention may be provided as a method, system, or computer program product. Accordingly, the present invention may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, the present invention may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, optical storage, and the like) having computer-usable program code embodied therein.
The present invention is described with reference to flowchart illustrations and/or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of the invention. It will be understood that each flow and/or block of the flow diagrams and/or block diagrams, and combinations of flows and/or blocks in the flow diagrams and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (10)
1. A method for improving chromatic aberration of a monocrystalline silicon wafer is characterized by comprising the following steps:
extracting the current supply and return line period, the cutting direction and the cutting position, and calculating a color difference index;
obtaining the current line winding speed, the current line unwinding speed and the current cutting tension, and calculating an action risk index and a silicon rod line breaking position in real time;
acquiring the color difference index, updating the color difference index according to the measured data value, and calculating a new supply and return line period, a new cutting direction, a new cutting position, a take-up speed index updating value, a pay-off speed index updating value and a cutting tension updating value;
according to the silicon rod wire breaking position, flattening and cutting off steel wires;
acquiring the new supply and return line period, the new cutting direction and the new cutting position, and setting steel wire control parameters;
and acquiring the updated value of the take-up speed index, the updated value of the pay-off speed index and the updated value of the cutting tension, and performing automatic control on take-up and pay-off of the steel wire.
2. The method for improving the chromatic aberration of the monocrystalline silicon wafer according to claim 1, wherein the extracting the current supply and return line period, the cutting direction and the cutting position and calculating the chromatic aberration index specifically comprise:
extracting a current supply and return line period as a supply and return line period index;
extracting the current cutting direction as a cutting direction index;
extracting a current cutting position as a cutting position index;
setting a first coefficient, a second coefficient, a third coefficient and a fourth coefficient;
calculating the color difference index in real time by using a first calculation formula;
the first calculation formula is:
S＝k 1 Z+k 2 Q F +k 3 Q W +k 4
wherein S is the color difference index, k 1 Is the first coefficient, k 2 Is the second coefficient, k 3 Is the third coefficient, k 4 Is a fourth coefficient, Z is the cycle index of the supply and return lines, Q F Is the index of the cutting direction, Q W Is the cutting position index.
3. The method for improving the chromatic aberration of the monocrystalline silicon wafer according to claim 1, wherein the obtaining of the current take-up speed, the current pay-off speed and the current cutting tension and the real-time calculation of the action risk index and the silicon rod breakage position comprise:
extracting the current take-up speed as a take-up speed index;
extracting the current paying-off speed as a paying-off speed index;
extracting the current cutting tension as a cutting tension index;
calculating an action risk index at each position by using a second calculation formula;
extracting the silicon rod broken line position by using a third calculation formula;
the second calculation formula is:
F＝k 5 V S +K 6 V F +k 7 L Z
wherein F is an action risk index, V S Is the take-up speed index, V F Is the pay-off speed index, L Z Is the cutting tension index, k 5 Is the fifth coefficient, k 6 Is the sixth coefficient, k 7 Is a seventh coefficient;
the third calculation formula is:
D＝MAx(F x )
wherein D is the silicon rod disconnection position, and Max () is a maximum action risk extraction function.
4. The method according to claim 2, wherein the obtaining of the color difference index, the updating of the color difference index according to the measured data value, the calculation of a new supply and return line period, a new cutting direction, a new cutting position, an updated value of a take-up speed index, an updated value of a pay-off speed index, and an updated value of a cutting tension, specifically comprises:
acquiring the color difference index and the actually measured data value;
obtaining a first coefficient, a second coefficient, a third coefficient and a fourth coefficient by using a fourth calculation formula, and calling the first calculation formula to update and calculate the color difference index;
judging whether the updated color difference index meets a fifth calculation formula, if so, sending an optimized updating cutting command, and if not, sending an optimized updating take-up and pay-off command;
after the cutting command is received, calculating the new supply loop line period, the new cutting direction and the new cutting position by using a sixth calculation formula;
after the wire take-up and pay-off command is received, calculating an updated value of the take-up speed index, an updated value of the pay-off speed index and an updated value of the cutting tension by using a seventh calculation formula;
the fourth calculation formula is:
wherein S is t Is an actually measured value, (S, S) t ) e.P is a set consisting of all measured data values and all color difference indexes, and Argmin () is a set of the measured data values and the color difference indexes when the minimum values are calculated in a one-to-one correspondence mannerA function of the first coefficient, the second coefficient, the third coefficient, and the fourth coefficient;
the fifth calculation formula is:
S＞T
wherein T is a test margin;
the sixth calculation formula is:
wherein Q is 1 Period, Q, for the new supply loop 2 Is the new cutting direction, Q 3 For the new cutting position, n 1 、n 2 、n 3 Sequentially comprises a first replacement coefficient, a second replacement coefficient and a third replacement coefficient;
the seventh calculation formula is:
wherein, V S1 Updating the value of the take-up speed index, V F1 Updating the value of the payoff speed index, L Z1 Updating the value for the cutting tension.
5. The method for improving the chromatic aberration of the monocrystalline silicon wafer according to claim 1, wherein the flattening and shearing off the steel wire according to the wire breakage position of the silicon rod specifically comprises:
obtaining the wire breakage position of the silicon rod;
removing residual steel wires on the guide wheel to enable the steel wires at the broken line to be flat, wherein the flat state is the condition without jumper wires, overlapping wires and cross wires;
cleaning the steel wire with alcohol, and automatically cutting the steel wire.
6. The method for improving the chromatic aberration of the monocrystalline silicon wafer according to claim 1, wherein the obtaining of the new supply return line period, the new cutting direction and the new cutting position and the setting of the steel wire control parameters specifically comprise:
acquiring the new supply loop line period, the new cutting direction and the new cutting position;
shearing the end face of the steel wire to be flat, and aligning the current installation position according to the period of the new supply and return line, the new cutting direction and the new cutting position;
checking whether the upsetting force, the welding current, the normalizing current and the normalizing time are preset positions or not;
after the silicon rod wire breakage position occurs, changing the silicon rod wire breakage position into the new supply and return wire period, the new cutting direction and the new cutting position;
and after the tension of the take-up and pay-off line is modified into the original cutting tension, the operation is started after the new cutting position is reset.
7. The method for improving the chromatic aberration of the monocrystalline silicon piece according to claim 1, wherein the obtaining of the updated value of the take-up speed index, the updated value of the pay-off speed index and the updated value of the cutting tension for automatic wire take-up and pay-off control comprises:
acquiring the take-up speed index updating value, the pay-off speed index updating value and the cutting tension updating value, and keeping the slurry spraying from stopping;
carrying out constant-speed wire rewinding according to the wire rewinding speed index updating value, and setting the cutting tension of the steel wire as the cutting tension updating value;
and paying off the steel wire according to the paying off speed index updating value, and starting cutting.
8. A system for improving chromatic aberration of a single crystal silicon wafer, the system comprising:
the color difference acquisition module is used for extracting the current supply and return line period, the cutting direction and the cutting position and calculating a color difference index;
the cutting learning module is used for obtaining the current line winding speed, the current line unwinding speed and the current cutting tension and calculating an action risk index and a silicon rod line breaking position in real time;
the wire breakage risk updating module is used for acquiring the color difference index, updating the color difference index according to the actually measured data value, and calculating a new supply and return wire period, a new cutting direction, a new cutting position, a wire take-up speed index updating value, a wire release speed index updating value and a cutting tension updating value;
the wire drawing control module is used for flattening and cutting steel wires according to the wire breaking position of the silicon rod;
the welding wire control module is used for acquiring the period of the new supply return wire, the new cutting direction and the new cutting position and setting steel wire control parameters;
and the take-up and pay-off control module is used for acquiring the updated take-up speed index value, the updated pay-off speed index value and the updated cutting tension value and performing automatic take-up and pay-off control on the steel wire.
9. A computer-readable storage medium on which computer program instructions are stored, which, when executed by a processor, implement the method of any one of claims 1-7.
10. An electronic device comprising a memory and a processor, wherein the memory is configured to store one or more computer program instructions, wherein the one or more computer program instructions are executed by the processor to implement the method of any of claims 1-7.
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