CN114783651A - Aluminum paste with good capability of burning through silicon nitride layer and preparation method thereof - Google Patents
Aluminum paste with good capability of burning through silicon nitride layer and preparation method thereof Download PDFInfo
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 71
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 60
- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 46
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 46
- 238000002360 preparation method Methods 0.000 title abstract description 22
- 239000000843 powder Substances 0.000 claims abstract description 65
- 239000011521 glass Substances 0.000 claims abstract description 56
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 claims abstract description 15
- -1 silver-aluminum Chemical compound 0.000 claims abstract description 10
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 9
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 claims abstract description 9
- 229910000676 Si alloy Inorganic materials 0.000 claims abstract description 8
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 claims abstract description 8
- KKCBUQHMOMHUOY-UHFFFAOYSA-N Na2O Inorganic materials [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 claims abstract description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000012752 auxiliary agent Substances 0.000 claims abstract description 5
- GHPGOEFPKIHBNM-UHFFFAOYSA-N antimony(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Sb+3].[Sb+3] GHPGOEFPKIHBNM-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000000853 adhesive Substances 0.000 claims abstract description 3
- 230000001070 adhesive effect Effects 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 6
- 239000002994 raw material Substances 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 4
- 239000003960 organic solvent Substances 0.000 claims description 4
- 239000001856 Ethyl cellulose Substances 0.000 claims description 3
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims description 3
- 229920001249 ethyl cellulose Polymers 0.000 claims description 3
- 235000019325 ethyl cellulose Nutrition 0.000 claims description 3
- IFPMZBBHBZQTOV-UHFFFAOYSA-N 1,3,5-trinitro-2-(2,4,6-trinitrophenyl)-4-[2,4,6-trinitro-3-(2,4,6-trinitrophenyl)phenyl]benzene Chemical compound [O-][N+](=O)C1=CC([N+](=O)[O-])=CC([N+]([O-])=O)=C1C1=C([N+]([O-])=O)C=C([N+]([O-])=O)C(C=2C(=C(C=3C(=CC(=CC=3[N+]([O-])=O)[N+]([O-])=O)[N+]([O-])=O)C(=CC=2[N+]([O-])=O)[N+]([O-])=O)[N+]([O-])=O)=C1[N+]([O-])=O IFPMZBBHBZQTOV-UHFFFAOYSA-N 0.000 claims description 2
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 claims description 2
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 claims description 2
- CRWNQZTZTZWPOF-UHFFFAOYSA-N 2-methyl-4-phenylpyridine Chemical compound C1=NC(C)=CC(C=2C=CC=CC=2)=C1 CRWNQZTZTZWPOF-UHFFFAOYSA-N 0.000 claims description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 2
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 claims description 2
- 239000011230 binding agent Substances 0.000 claims description 2
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000002270 dispersing agent Substances 0.000 claims description 2
- 239000006185 dispersion Substances 0.000 claims description 2
- 150000002148 esters Chemical class 0.000 claims description 2
- 238000005096 rolling process Methods 0.000 claims description 2
- 229940116411 terpineol Drugs 0.000 claims description 2
- 239000013008 thixotropic agent Substances 0.000 claims description 2
- 239000000080 wetting agent Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 12
- 239000002245 particle Substances 0.000 abstract description 8
- 238000005245 sintering Methods 0.000 abstract description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 239000002003 electrode paste Substances 0.000 abstract description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 17
- 239000000203 mixture Substances 0.000 description 9
- 238000002161 passivation Methods 0.000 description 9
- 238000009472 formulation Methods 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Inorganic materials O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000003723 Smelting Methods 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 238000000498 ball milling Methods 0.000 description 2
- 239000012768 molten material Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000010791 quenching Methods 0.000 description 2
- 230000000171 quenching effect Effects 0.000 description 2
- 238000006722 reduction reaction Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- YEAUATLBSVJFOY-UHFFFAOYSA-N tetraantimony hexaoxide Chemical compound O1[Sb](O2)O[Sb]3O[Sb]1O[Sb]2O3 YEAUATLBSVJFOY-UHFFFAOYSA-N 0.000 description 2
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000011267 electrode slurry Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000000156 glass melt Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
- H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
Abstract
The invention discloses aluminum paste with good capability of burning through a silicon nitride layer and a preparation method thereof, belonging to the field of battery electrode paste. The aluminum paste comprises the following components in percentage by weight: 64-72% of aluminum powder, 0-10% of silver-aluminum alloy powder, 2-5% of glass powder, 1-3% of organic auxiliary agent, 14.9-26.5% of organic adhesive, 0.1-3% of tin powder and 1-5% of aluminum-silicon alloy powder; the glass powder is prepared from V2O5、P2O5、Sb2O3、ZnO、Bi2O3、Na2O and an alkaline earth metal oxide; the aluminum paste with good capability of burning through the silicon nitride layer can be mixed with nitrogen in the sintering processThe silicon oxide film layer is completely reacted and then forms good contact with a Si substrate or a Poly-Si layer at the bottom of the battery, and the reaction degree of aluminum powder particles and the substrate and the sintering degree of the aluminum layer can be controlled by adjusting the components of the aluminum paste.
Description
Technical Field
The invention relates to the field of battery electrode slurry, in particular to aluminum slurry with good capability of burning through a silicon nitride layer and a preparation method thereof.
Background
The tunneling oxide layer passivation contact solar cell (TOPCon) is used as a new high-efficiency cell technology, a layer of silicon nitride is covered on the front surface and the back surface of a cell and is used as a passivation film, the passivation effect of the cell is improved by the double-sided film coating structure, and the conversion efficiency of the cell can be improved; TOPCon cells require that the paste used on the front and back sides of the cell be able to form good contact with the underlying Si or poly-Si by burning through the silicon nitride layer; at present, silver paste or silver-aluminum paste is respectively printed on the front surface and the back surface and sintered to be used as electrode materials; however, the silver paste is used as electrode paste, the technical push cost pressure is high, the existing aluminum paste in the current market has poor burn-through performance on a silicon nitride film layer, good ohmic contact cannot be formed between the aluminum paste and a silicon substrate in the sintering process, and the sintering characteristic cannot meet the requirement of a new technology; CN201710717663.9 and CN201410219821.4 describe two cell structures that can be fired through the passivation film layer with aluminum paste, but do not describe the aluminum paste; some technical papers also describe the application evaluation of aluminum paste on TOPCon battery, but do not discuss the paste composition and design.
Disclosure of Invention
The present invention is directed to overcoming the above-mentioned deficiencies of the prior art and providing an aluminum paste capable of reacting off a silicon nitride film layer during a sintering process and further forming a good contact with a Si substrate or a Poly-Si layer at the bottom of a battery and a method for preparing the same.
In order to realize the purpose, the invention adopts the technical scheme that: an aluminum paste with good capability of burning through a silicon nitride layer comprises the following components in percentage by weight: 64-72% of aluminum powder, 0-10% of silver-aluminum alloy powder, 2-5% of glass powder, 1-3% of organic auxiliary agent, 14.9-26.5% of organic adhesive and tin powder0.1-3 percent of aluminum-silicon alloy powder and 1-5 percent of aluminum-silicon alloy powder; the glass powder is prepared from V2O5、P2O5、Sb2O3、ZnO、Bi2O3、Na2O and alkaline earth metal oxides.
The invention uses V2O5-P2O5The ZnO multi-component oxide is used as a main body formed by a glass powder network, so that the glass powder has a lower softening point and a lower surface tension and can infiltrate the passivation film to a greater extent; the invention adds V into glass powder2O5And Bi2O3Is due to V2O5And Bi2O3Has strong oxidizing property under high temperature state, and can make Sb added in the glass powder2O3Converting into Sb with certain oxidation capacity under strong oxidation action2O5And dispersed in the form of microcrystalline state in the glass melt, and the glass powder system has oxidizing V5 +And Sb5+Can generate oxidation-reduction reaction with silicon nitride with reducibility so as to destroy the silicon nitride layer; in addition, due to the addition of P2O5H, the phosphate system can be suspended with the silicon oxynitride surface under the high-temperature molten state of the glass powder+The combination becomes corrosive phosphoric acid, and the phosphoric acid can also corrode and destroy silicon nitride; according to the invention, the tin powder and the aluminum-silicon alloy powder are added into the aluminum paste, because the tin powder and the aluminum-silicon alloy powder have lower softening points, the tin powder and the aluminum-silicon alloy powder can be rapidly melted, the compactness of sintering among aluminum particles is promoted to be improved, and the conductive effect of an aluminum layer is improved; according to the invention, the silver-aluminum alloy powder is added into the aluminum paste, so that the conductivity of the aluminum layer can be improved, and the contact effect of the paste in the area not corroded by the glass powder and the battery substrate can be improved by the silver particles.
Preferably, the aluminum powder is spherical powder with a median diameter D50Is 1-5 μm; the median diameter D of the silver-aluminum alloy powder50Is 5-15 μm.
More preferably, the median diameter D of the aluminum powder501-3 μm, the median diameter D of the silver-aluminum alloy powder508-9 μm; the inventionBy adding aluminum powder, after the glass powder corrodes the silicon nitride, aluminum particles are in contact with the substrate layer in the area; the larger the particle size of the aluminum powder is, the smaller the number of points of contact with the substrate decreases, and the aluminum powder is likely to form excessive reaction with the Si substrate or Poly-Si in the region where the passivation film is corroded, forming destructive recombination centers, and destroying the passivation effect.
Preferably, the glass powder is low-softening-point glass powder with the softening point of 400-450 ℃, and comprises the following components in parts by weight: v2O525 to 40 portions of ZnO, 20 to 30 portions of ZnO, P2O515-25 parts of Sb2O35 to 15 portions of Bi2O38-12 parts of Na20.1-3 parts of O, 1-10 parts of alkaline earth metal oxide; the median diameter D of the low-softening-point glass powder501.2-1.5 μm; the glass powder with the low softening point can be used for infiltrating the passivation film to a large extent, and the glass powder with the small particle size is dispersed in the slurry, so that the passivation film can be corroded more uniformly.
Preferably, the organic auxiliary agent comprises a dispersing agent, a thixotropic agent and a wetting agent.
Preferably, the organic binder comprises the following components in parts by weight: 1-30 parts of EC (ethyl cellulose) and 70-99 parts of organic solvent.
More preferably, the organic solvent is at least one of butyl carbitol, butyl carbitol acetate, diethylene glycol dibutyl ether, alcohol ester dodeca and terpineol.
Preferably, the weight part of silicon in the aluminum-silicon alloy powder is 12 parts.
Preferably, the preparation method of the glass powder comprises the following steps: (1) uniformly mixing the raw materials, smelting and preserving heat, (2) carrying out water quenching and ball milling on the heat-preserved molten material, and drying the obtained solid to obtain the glass powder.
The invention also provides a preparation method of the aluminum paste with good capability of burning through the silicon nitride layer, which comprises the following steps: and uniformly mixing the raw materials, and performing dispersion rolling to obtain the aluminum paste with good silicon nitride layer burning-through capability.
Hair brushThe beneficial effects are as follows: the invention provides aluminum paste with good capability of burning through a silicon nitride layer, which is prepared by adding V into glass powder2O5、P2O5、Sb2O3、ZnO、Bi2O3、Na2O and alkaline earth metal oxide, so that the silicon nitride film layer can be effectively corroded by the glass powder in a molten state, and the aluminum layer is in good contact with the Si substrate or Poly-Si; by adding the silver-aluminum alloy powder into the aluminum paste, the conductivity of the aluminum layer is improved, the contact effect of the paste in the area which is not corroded by the glass powder and the battery substrate is promoted, and the reaction degree of aluminum powder particles and the Si substrate or Poly-Si and the sintering degree of the aluminum layer can be controlled by adjusting the components of the aluminum paste.
Detailed Description
To better illustrate the objects, aspects and advantages of the present invention, the present invention will be further described with reference to the following examples.
Example 1
In an embodiment of the aluminum paste with good ability to burn through a silicon nitride layer, the formula of the glass frit is shown in table 1, and the formula of the aluminum paste with good ability to burn through a silicon nitride layer is shown in table 2.
In an embodiment, the preparation method of the glass powder comprises the following steps: proportioning according to the glass formula (weight part) in the table 1, (1) mixing and uniformly stirring various raw materials, putting the mixed materials into a crucible, putting the crucible into a high-temperature muffle furnace, and smelting at the temperature of 1000 ℃ for 40 min; (2) pouring the heat-insulated molten materials into deionized water in sequence for water quenching, carrying out ball milling on the water-quenched glass slag, standing the ball-milled glass slurry, drying, and drying to obtain glass powder; testing the median diameter D of the prepared glass powder by adopting a laser particle size analyzer through a wet method50And the softening point temperature of the glass frit was measured using a high temperature muffle furnace, and the results are shown in table 1.
The preparation method of the aluminum paste with good capability of burning through the silicon nitride layer comprises the following steps: the ingredients were mixed according to the formulation (parts by weight) in table 2, and the raw materials were mixed and stirred uniformly and then dispersed and rolled by a three-roll mill.
Example 2
The formulation of the glass frit used in this example is shown in Table 1, and the formulation of the aluminum paste having good ability to burn through silicon nitride layer is shown in Table 2.
The preparation method of the glass powder is the same as that of the example 1, and the preparation method of the aluminum paste with good silicon nitride layer burning-through capability is the same as that of the example 1.
Example 3
The formulation of the glass frit used in this example is shown in Table 1, and the formulation of the aluminum paste having good ability to burn through silicon nitride layer is shown in Table 2.
The preparation method of the glass powder is the same as that of the example 1, and the preparation method of the aluminum paste with good silicon nitride layer burning-through capability is the same as that of the example 1.
Example 4
The formulation of the glass frit used in this example is shown in Table 1, and the formulation of the aluminum paste having good ability to burn through a silicon nitride layer is shown in Table 2.
The preparation method of the glass powder is the same as that of the example 1, and the preparation method of the aluminum paste with good silicon nitride layer burning-through capability is the same as that of the example 1.
TABLE 1
| Glass powder component (parts by weight) | Example 1 | Example 2 | Example 3 | Example 4 |
| V2O5 | 35 | 27.9 | 40 | 25 |
| ZnO | 25 | 30 | 20 | 20 |
| P2O5 | 17 | 15 | 16 | 25 |
| Sb2O3 | 8 | 5 | 5 | 15 |
| Bi2O3 | 10 | 12 | 8 | 11 |
| Na2O | 2 | 0.1 | 3 | 3 |
| Alkaline earth metal oxide | 3 | 10 | 8 | 1 |
| Median diameter D50 | 1.5μm | 1.2μm | 1.4μm | 1.3μm |
| Softening point | 450℃ | 430℃ | 410℃ | 400℃ |
TABLE 2
Comparative example 1
A comparative example of an aluminum paste according to the invention with good ability to fire through a silicon nitride layer differs from example 2 in that: reduction of V in glass powder2O5The formula of the glass powder is shown in table 3, the formula of the aluminum paste with good silicon nitride layer burning-through capability is the same as that in example 2, the preparation method of the glass powder is the same as that in example 1, and the preparation method of the aluminum paste with good silicon nitride layer burning-through capability is the same as that in example 1.
Comparative example 2
This comparative example differs from example 2 in that: bi is not added into the glass powder2O3And reducing the weight part of ZnOThe formula of the glass powder is shown in table 3, the formula of the aluminum paste with good ability to burn through the silicon nitride layer is the same as that in example 2, the preparation method of the glass powder is the same as that in example 1, and the preparation method of the aluminum paste with good ability to burn through the silicon nitride layer is the same as that in example 1.
Comparative example 3
The comparative example differs from example 2 in that: reduction of glass powder P2O5The formula of the glass powder is shown in table 3, the formula of the aluminum paste with good silicon nitride layer burning-through capability is the same as that in example 2, the preparation method of the glass powder is the same as that in example 1, and the preparation method of the aluminum paste with good silicon nitride layer burning-through capability is the same as that in example 1.
Comparative example 4
The comparative example differs from example 2 in that: sb is not added into the glass powder2O3The formula of the glass powder is shown in table 3, the formula of the aluminum paste with good ability to burn through the silicon nitride layer is the same as that in example 2, the preparation method of the glass powder is the same as that in example 1, and the preparation method of the aluminum paste with good ability to burn through the silicon nitride layer is the same as that in example 1.
TABLE 3
| Glass powder component (parts by weight) | Comparative example 1 | Comparative example 2 | Comparative example 3 | Comparative example 4 |
| V2O5 | 5 | 27.9 | 27.9 | 27.9 |
| ZnO | 30 | 12 | 30 | 30 |
| P2O5 | 15 | 15 | 3 | 15 |
| Sb2O3 | 5 | 5 | 5 | 0 |
| Bi2O3 | 12 | 0 | 12 | 12 |
| Na2O | 0.1 | 0.1 | 0.1 | 0.1 |
| Alkaline earth metal oxide | 10 | 10 | 10 | 10 |
| Median diameter D50 | 1.2μm | 1.2μm | 1.2μm | 1.2μm |
| Softening point | 430℃ | 430℃ | 430℃ | 430℃ |
Examples of effects
The aluminum pastes of examples 1 to 4 and comparative examples 1 to 4 were printed on the back of TOPCon batteries, respectively, and the battery pieces were sintered at a temperature of 750 c, and subjected to a contact resistivity test using the TLM method.
TABLE 5
As shown in Table 5, the contact resistivity of the aluminum gate line and the silicon substrate in examples 1-4 was 20m Ω cm or less2Ohmic contact was well achieved, while in comparative examples 1 and 3, V was reduced in the glass frit, respectively2O5And P2O5The contact resistivity measured in comparative examples 1 and 3 was very large and a good ohmic contact could not be formed; comparative examples 2 and 4 are due to the lack of Bi in the glass frit2O3And Sb2O3Composition resulting in a contact resistivity > 1000m Ω cm as tested in comparative examples 2, 42Ohmic contact cannot be formed.
Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention and not for limiting the protection scope of the present invention, and although the present invention is described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions can be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention.
Claims (9)
1. An aluminum paste with good capability of burning through a silicon nitride layer is characterized by comprising the following components in percentage by weight: 64-72% of aluminum powder, 0-10% of silver-aluminum alloy powder, 2-5% of glass powder, 1-3% of organic auxiliary agent, 14.9-26.5% of organic adhesive, 0.1-3% of tin powder and 1-5% of aluminum-silicon alloy powder; the glass powder is prepared from V2O5、P2O5、Sb2O3、ZnO、Bi2O3、Na2O and an alkaline earth metal oxide.
2. The aluminum paste with good capability of burning through a silicon nitride layer according to claim 1, wherein the aluminum powder is spherical powder with a median diameter D50Is 1-5 μm; the median diameter D of the silver-aluminum alloy powder50Is 5-15 μm.
3. The aluminum paste with good ability to fire through a silicon nitride layer according to claim 1, wherein the aluminum powder has a median diameter D50Is 1-3 μm; the median diameter D of the silver-aluminum alloy powder50Is 8-9 μm.
4. The aluminum paste having good ability to fire through a silicon nitride layer according to claim 1, wherein the glass frit comprises the following components in parts by weight: v2O525-40 parts; 20-30 parts of ZnO; p2O515-25 parts; sb2O35-15 parts; bi2O38-12 parts; na (Na)20.1-3 parts of O; 1-10 parts of alkaline earth metal oxide; the median diameter D of the glass powder501.2-1.5 μm, and a softening point of 400-450 ℃.
5. The aluminum paste having a good ability to fire through a silicon nitride layer according to claim 4, wherein the alkaline earth metal oxide is at least one of BaO, CaO, SrO.
6. The aluminum paste having a good ability to fire through a silicon nitride layer according to claim 1, wherein the organic auxiliary agent comprises a dispersant, a thixotropic agent, and a wetting agent.
7. The aluminum paste having good ability to fire through a silicon nitride layer according to claim 1, wherein the organic binder comprises the following components in parts by weight: 1-30 parts of ethyl cellulose and 70-99 parts of an organic solvent.
8. The aluminum paste having a good ability to fire through a silicon nitride layer according to claim 7, wherein the organic solvent is at least one of butyl carbitol, butyl carbitol acetate, diethylene glycol dibutyl ether, alcohol ester dodeca, terpineol.
9. The method for preparing an aluminum paste having a good ability to fire through a silicon nitride layer according to any one of claims 1 to 8, comprising the steps of: and uniformly mixing the raw materials, and performing dispersion rolling to obtain the aluminum paste with good capability of burning through the silicon nitride layer.
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