CN114759108A - 一种光转换光伏组件 - Google Patents

一种光转换光伏组件 Download PDF

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CN114759108A
CN114759108A CN202011607077.7A CN202011607077A CN114759108A CN 114759108 A CN114759108 A CN 114759108A CN 202011607077 A CN202011607077 A CN 202011607077A CN 114759108 A CN114759108 A CN 114759108A
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宁兆伟
冯涛
黄涛华
石云
徐高伟
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Worldwide Energy And Manufacturing Usa Co ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • HELECTRICITY
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    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/055Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type

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Abstract

本发明公布了一种光转换光伏组件,包括表层钢化玻璃、第一封装层、太阳能电池片、第二封装层和背板,所述的表层钢化玻璃表面带有复合薄膜层,所述的背板上表面设置有光线反射层。所述的复合薄膜层包括自上而下设置的上转换薄膜层、下转换薄膜层及减反射薄膜层。本发明通过使用表面带有复合薄膜层的钢化玻璃,能够将太阳光谱中太阳能电池片响应波长范围外的红外光和紫外光转换为具有高光谱响应的可见光和近红外光,大幅提高了组件的光能利用率及转换效率。

Description

一种光转换光伏组件
技术领域
本发明涉及太阳能技术领域,特别涉及一种光转换光伏组件。
背景技术
太阳能作为一种清洁的可再生新能源受到了越来越多的关注,其应用也越来越广泛,目前太阳能一个最重要的应用就是光伏发电。光伏发电是利用光伏效应直接将太阳能转换为电能,光伏发电的基本单元是太阳能电池,在具体的应用中,通常是将多个太阳能电池片封装成光伏组件,然后再将多个光伏组件进行串联或并联连接后接入逆变器,逆变器将组件产生的直流电转换为交流电,供电气负载使用或并入电网。
太阳光谱波长范围在150nm~4000nm,包含紫外光、可见光和红外光,其中7%的太阳辐射能量分布在紫外光谱区,50%在可见光谱区,43%在红外光谱区。由于目前组件使用封装材料的特性,太阳能电池片对短波长光和长波长光的利用率很低,如现有封装材料的紫外截止波长一般为360nm,当太阳光照射到组件,太阳光谱中小于此波长的紫外光首先被封装材料吸收,无法被太阳能电池片利用,因此间接降低了组件的输出功率及转换效率。另外对于波长大于1200nm的红外光,由于光子能量小于硅的带隙宽度,因此不能使电池片产生光生电流,这部分光只能转换为热量,从而增加电池片的温度,降低组件的转换效率。因此,如何最大限度提高光伏组件的光能利用率,是亟待解决的技术问题。
发明内容
针对以上问题,本发明的目的是提供一种光转换光伏组件,表层钢化玻璃带有的复合薄膜层将太阳光谱中的红外光和紫外光转换为具有高光谱响应的可见光和近红外光,实现了对太阳光谱各种波段光的高效利用,提升了组件的光能利用率及转换效率。
本发明是这样得以实现的:一种光转换光伏组件,包括表层钢化玻璃、第一封装层、太阳能电池片、第二封装层和背板,所述的表层钢化玻璃表面带有复合薄膜层,所述的背板上表面设置有光线反射层。
所述的复合薄膜层包括自上而下设置的上转换薄膜层、下转换薄膜层及减反射薄膜层,上转换薄膜层将波长高于1200nm的红外光转换为可见光,下转换薄膜层将波长低于360nm的紫外光转换为可见光或近红外光。
所述的上转换薄膜层为Er3+单掺、Tm3+单掺、Yb3+-Er3+共掺、Yb3+-Tm3+共掺或Yb3+-Ho3+共掺的氧化物、氟化物或卤氧化物。
所述的下转换薄膜层为Ce3+单掺、Dy3+单掺、Ce3+-Yb3+共掺、Tb3+-Yb3+共掺、Tm3+-Yb3 +共掺、Ho3+-Yb3+共掺或Pr3+-Yb3+共掺的氧化物、氟化物或卤氧化物。
所述的减反射薄膜层包括两层或两层以上减反射薄膜。
所述的上转换薄膜层和下转换薄膜层厚度分别为50nm~500nm,减反射薄膜层厚度为100nm~800nm。
所述的光线反射层表面设置有V形、金字塔形或圆锥形的凹凸结构。
所述的光线反射层厚度为100nm~1000nm。
所述的第一封装层和第二封装层材料为乙烯-乙酸乙烯酯共聚物、聚乙烯醇缩丁醛、硅酮或聚氨酯中的一种。
所述的第一封装层材料紫外截止波长高于360nm。
本发明具有如下有益效果:通过使用表面带有复合薄膜层的钢化玻璃,能够将太阳光谱中太阳能电池片响应波长范围外的红外光和紫外光转换为具有高光谱响应的可见光和近红外光,大幅提高了太阳能电池片对太阳光的利用率,而且能够避免太阳光中的红外线使组件温度升高的问题。钢化玻璃层中另外设置的减反射薄膜层包括多层减反射薄膜,对光线有多重减反射的效果,使经过光谱转换过得到的增强可见光最大限度透过表层钢化玻璃到达太阳能电池片表面。此外组件背板的上表面带有光线反射层,光线反射层特殊的表面结构能够优化光线的传播路径,使得组件内非电池片区域更多的光线通过多次反射最终到达太阳能电池片的表面,进一步提升了组件的光能利用率及转换效率。
附图说明
图1为本发明一种光转换光伏组件的剖面图。
图2为本发明复合薄膜层的结构示意图。
图中,1为表层钢化玻璃,2为第一封装层,3为太阳能电池片,4为第二封装层,5为背板,6为复合薄膜层,7为上转换薄膜层,8为下转换薄膜层,9为减反射薄膜层,10为光线反射层。
具体实施方式
为进一步了解本发明的技术特征与内容,下面结合附图进行说明。
如图1和图2所示,一种光转换光伏组件,包括表层钢化玻璃1、第一封装层2、太阳能电池片3、第二封装层4和背板5,所述的表层钢化玻璃表面带有复合薄膜层6。所述的复合薄膜层6包括自上而下设置的上转换薄膜层7、下转换薄膜层8及减反射薄膜层9。上转换薄膜层为Er3+单掺、Tm3+单掺、Yb3+-Er3+共掺、Yb3+-Tm3+共掺或Yb3+-Ho3+共掺的氧化物、氟化物或卤氧化物。以Yb3+-Er3+共掺的NaYF4为例,在转换过程中,Yb3+(2F7/22F5/2)吸收近红外辐射,并将其传递给Er3+,因而Er3+4I11/2能级上的粒子被积累。在4I11/2能级的寿命期内,又一个光子被Yb3+吸收,并将其能量传递给Er3+,使Er3+4I11/2能级跃迁到4I7/2能级,然后无辐射跃迁到4S3/2能级,最后4S3/2能级产生绿光发射,整个过程中吸收了两个红外光子,产生了一个绿光光子。通过这种上转换过程,该上转换薄膜层可将太阳能电池片不能吸收的红外光转换为其具有较高响应的可见光,大幅提高太阳能电池片对太阳光的光谱响应,增加了电池片的光生电流;同时由于太阳光中的红外光被转换利用,降低了红外光带来的热效应,间接降低了电池片的温度。下转换薄膜层为Ce3+单掺、Dy3+单掺、Ce3+-Yb3+共掺、Tb3+-Yb3+共掺、Tm3+-Yb3+共掺、Ho3+-Yb3+共掺或Pr3+-Yb3+共掺的氧化物、氟化物或卤氧化物。下转换过程与上转换过程正好相反,在这个过程中材料吸收一个高能光子的紫外光后,发射两个或多个低能光子。以Ce3+-Yb3+共掺的YBO3为例,在该材料的下转换过程中,吸收一个紫外光子,产生一个蓝光光子和近红外光子。通过这种量子裁剪,该下转换薄膜层可将太阳能电池片不能吸收的紫外光转换为其具有较高响应的可见光及近红外光,进一步提高了太阳能电池片对太阳光的光谱响应,提升了光能的利用率。
上述的复合薄膜层中同时设置有减反射薄膜层。由于上转换薄膜层及下转换薄膜层主要功能是分别实现红外光和紫外光的转换,为了保证经过光谱转换后的可见光及近红外光能充分透过表层钢化玻璃,上转换薄膜层及下转换薄膜层下面的减反射薄膜层中的多层减反射薄膜利用不同光学薄膜产生的干涉效果来消除反射光,从而保证钢化玻璃达到最佳的透光率。
背板上表面设置有光线反射层10,光线反射层表面设置有V形、金字塔形或圆锥形的凹凸结构。在本实施例中,光线反射层表面分布有规则排列的V形槽,这种结构的表面增强了背板与第二封装层之间的粘结力,防止了脱层问题的产生。对于入射到太阳能电池片间隙区域的光线,其光反射路径可通过优化设置V型沟槽的内夹角进行调节。例如,当V型槽内夹角为120°~137°时,垂直入射至V型槽内表面的光线发生第一次反射,反射光到达钢化玻璃上表面,此时在玻璃与空气界面光线的入射角为43°~60°,大于玻璃-空气界面的临界角42°,在此界面光线将会发生第二次反射并被反射至太阳能电池片表面。因此光线反射层的特殊表面结构基本防止了反射光的浪费,实现对组件表面入射光的最大限度利用,进一步提升了组件的输出功率及转换效率。
以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式,然而本发明并不局限于此。对于本领域内的技术人员,根据本发明的上述内容,按照本领域的现有技术和知识,结合本发明的基本思想技术,可以做出各种改变或改进,这些改变或改进应该属于本发明保护范围之内。

Claims (10)

1.一种光转换光伏组件,包括表层钢化玻璃、第一封装层、太阳能电池片、第二封装层和背板,其特征在于:所述的表层钢化玻璃表面带有复合薄膜层,所述的背板上表面设置有光线反射层。
2.如权利要求 1所述的光伏组件,其特征在于:所述的复合薄膜层包括自上而下设置的上转换薄膜层、下转换薄膜层及减反射薄膜层,上转换薄膜层将波长高于1200nm的红外光转换为可见光,下转换薄膜层将波长低于360nm的紫外光转换为可见光或近红外光。
3.如权利要求 2所述的光伏组件,其特征在于:所述的上转换薄膜层为Er3+单掺、Tm3+单掺、Yb3+-Er3+共掺、Yb3+-Tm3+共掺或Yb3+-Ho3+共掺的氧化物、氟化物或卤氧化物。
4.如权利要求 2所述的光伏组件,其特征在于:所述的下转换薄膜层为Ce3+单掺、Dy3+单掺、Ce3+-Yb3+共掺、Tb3+-Yb3+共掺、Tm3+-Yb3+共掺、Ho3+-Yb3+共掺或Pr3+-Yb3+共掺的氧化物、氟化物或卤氧化物。
5.如权利要求2所述的光伏组件,其特征在于:所述的减反射薄膜层包括两层或两层以上减反射薄膜。
6.如权利要求 2所述的光伏组件,其特征在于:所述的上转换薄膜层和下转换薄膜层厚度分别为50nm~500nm,减反射薄膜层厚度为100nm~800nm。
7.如权利要求 1所述的光伏组件,其特征在于:所述的光线反射层表面设置有V形、金字塔形或圆锥形的凹凸结构。
8.如权利要求 1所述的光伏组件,其特征在于:所述的光线反射层厚度为100nm~1000nm。
9.如权利要求 1所述的光伏组件,其特征在于:所述的第一封装层和第二封装层材料为乙烯-乙酸乙烯酯共聚物、聚乙烯醇缩丁醛、硅酮或聚氨酯中的一种。
10.如权利要求 1所述的光伏组件,其特征在于:所述的第一封装层材料紫外截止波长高于360nm。
CN202011607077.7A 2020-12-28 2020-12-28 一种光转换光伏组件 Pending CN114759108A (zh)

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CN116199429A (zh) * 2022-12-22 2023-06-02 隆基绿能科技股份有限公司 一种涂层材料及其在光伏组件用玻璃中的应用和光伏组件
CN116199429B (zh) * 2022-12-22 2024-07-26 隆基绿能科技股份有限公司 一种涂层材料及其在光伏组件用玻璃中的应用和光伏组件

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116199429A (zh) * 2022-12-22 2023-06-02 隆基绿能科技股份有限公司 一种涂层材料及其在光伏组件用玻璃中的应用和光伏组件
CN116199429B (zh) * 2022-12-22 2024-07-26 隆基绿能科技股份有限公司 一种涂层材料及其在光伏组件用玻璃中的应用和光伏组件

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