CN114758838A - Manufacturing method of silver-plated wire - Google Patents
Manufacturing method of silver-plated wire Download PDFInfo
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- CN114758838A CN114758838A CN202110029753.5A CN202110029753A CN114758838A CN 114758838 A CN114758838 A CN 114758838A CN 202110029753 A CN202110029753 A CN 202110029753A CN 114758838 A CN114758838 A CN 114758838A
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- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
- H01B13/06—Insulating conductors or cables
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
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Abstract
The invention discloses a method for manufacturing a silver-plated wire, which comprises the steps of carrying out micro etching on the surface of a wire core by using plasma and growing an atom transition layer, further manufacturing a silver-plated conducting layer and a nano insulating layer by using a plasma vapor deposition method in a vacuum environment, and manufacturing the silver-plated wire with a high-density protective layer formed by multi-wire twisting and stranding or single-wire continuous coating under a vacuum condition. The method can replace the traditional manufacturing method of the silver-plated wire, can realize one-step completion, greatly shortens the process flow, and is a clean, environment-friendly and pollution-free method which is more suitable for manufacturing flexible functional wires.
Description
Technical Field
The invention relates to the technical field of wire and cable processing, in particular to a manufacturing method of a silver-plated wire.
Background
Silver-plated wires are developed in the fields of high-frequency electric signal high-speed transmission and electrical appliance miniaturization application, wherein the superfine and flexible wires gradually replace the traditional cables and are widely applied to textile garment fabrics and artificial intelligence wearing products.
The silver-plated copper wire with the largest traditional usage is called as a silver-plated copper wire or a silver-plated wire in some occasions, and is a fine wire formed by drawing through a wire drawing machine after silver is plated on an oxygen-free copper wire or a low-oxygen copper wire, the surface of a silver-plated conductive layer is scratched in the process of drawing for multiple times, the silver layer is secondarily polluted by drawing oil and mold impurities in the process, the surface of the silver layer is damaged by the process of doubling and stranding of the later working procedure, the high-speed transmission of electric signals is directly influenced, and meanwhile, when the process defect of single wires of the silver-plated single wires is compensated by the stranding and twisting of the silver-plated single wires, the application of the superfine silver-plated copper wire is limited. Can not meet the use requirements of ultrafine and high-frequency electric signal high-speed transmission in artificial intelligence and wearing products.
Disclosure of Invention
In order to solve the above technical problems, an object of the present invention is to provide a method for manufacturing a silver-plated wire, which is to manufacture a conductive silver layer by directly using a plasma vapor deposition method on a surface of a core, instead of a conventional production process in which a conductive layer is electroplated on an oxygen-free copper wire or a low-oxygen copper wire and then is drawn down by a wire drawing machine.
In order to achieve the purpose of the invention, the invention adopts the following technical scheme: a method for manufacturing silver-plated wires comprises the following steps: microetching the surface of the wire core by using at least one plasma etching ion source; depositing at least one first material by a magnetron sputtering deposition method to form an atomic transition layer on the surface of the core subjected to the micro etching; depositing a silver material by a plasma vapor deposition method to form a silver-plated conducting layer on the surface of the atomic transition layer; depositing at least one second material by a plasma vapor deposition method to form a nano insulating layer on the surface of the silver-plated conducting layer; and continuously coating at least one third material under a vacuum condition to form a protective layer on the surface of a single wire or a plurality of wires after the nano insulating layer is deposited and twisted and plied.
The manufacturing method of the technical scheme can replace the traditional manufacturing method of the silver plating wire, can realize the one-step method for manufacturing the silver plating wire with a defect-free silver layer, can greatly shorten the production process flow, and is a clean, environment-friendly and pollution-free method which is more suitable for manufacturing superfine and functional wires. Wherein, the micro-etching is to etch nano-sized micro-pits on the surface of the material, which is beneficial to the firm contact between different material layers; the manufactured atom transition layer can achieve the bonding fastness between the connecting wire core material and the silver-plated conducting layer, specifically, the atom transition layer is a controllable transition material which is increased by improving the bonding fastness between two different materials and has common characteristics, and the structure layer is an atomic layer; the outermost protective layer is used for protecting the whole silver-plated conducting layer and insulating layer.
In the above technical solution, preferably, the wire core of the wire is made of a conductor material or a non-conductor material; wherein, the conductor material is at least one of copper, aluminum, nickel, titanium and tungsten; the non-conductor material is at least one of quartz, carbon fiber, basalt fiber, glass fiber and chemical filament fiber.
In the above technical solution, preferably, the wire core is composed of a single wire or a plurality of wires, or a single strip or a plurality of strips; wherein, the line footpath of wire rod is 4um to 500um, the thickness of strip is 5um to 250um, width 1mm to 10 mm.
In the above technical solution, preferably, the at least one plasma etching ion source includes at least one plasma of argon, fluorine, chlorine and oxygen.
In the above technical solution, preferably, the etching depth of the micro etching is 10nm to 50 nm.
In the foregoing technical solution, preferably, the depositing of the at least one first material includes depositing at least one of nickel, chromium, molybdenum, tungsten, and copper by a magnetron sputtering method, and a thickness of the atomic transition layer is 1nm to 5 μm.
In the above technical solution, preferably, the silver material is deposited by a plasma vapor deposition method to form the silver-plated conductive layer with a thickness of 10nm to 5 μm on the surface of the atomic transition layer.
In the above technical solution, preferably, the depositing of the at least one second material includes depositing at least one of a metal oxide, a metal nitride, and a metal carbide by a plasma vapor deposition method; wherein the metal oxide comprises at least one of silicon oxide, aluminum oxide and zirconium oxide, the metal nitride comprises at least one of aluminum nitride, silicon nitride and titanium nitride, and the metal carbide comprises at least one of titanium carbide, silicon carbide and zirconium carbide.
In the above technical solution, preferably, the nano insulating layer includes at least one insulating film, a thickness of a single insulating film is 1nm to 50nm, and a total number of the insulating film layers is 2 to 20.
In the above technical solution, preferably, the at least one third material is continuously coated under vacuum conditions, including continuously coating at least one of fluoroplastic, silicone rubber, nylon, polyvinyl chloride, and UV glue.
The invention carries out micro-etching and atom transition layer growth on the surface of the wire core by using plasma, further uses a plasma vapor deposition method to manufacture a silver-plated conducting layer and a nano insulating layer in a vacuum environment, and realizes multi-wire twisting and stranding or single-wire continuous coating under the vacuum condition to form a high-density protective layer so as to manufacture the silver-plated wire. The manufactured silver-plated wire has a silver-plated conducting layer without pollution and defects on the surface, and has good flexible conducting performance, high corrosion resistance and high-frequency characteristics and an ultrafine wire structure. These advantages make silver-plated wire the first choice for high-frequency signal transmission line and colored textile line. The material has the characteristics of high conductivity, heat resistance, high frequency characteristic, high temperature resistance and corrosion resistance; the silver-plated wire is mainly applied to the fields of colored wires, textile wires, high-frequency application, miniature cables and aerospace cables.
Drawings
FIG. 1 is a schematic cross-sectional view of a conductive wire according to a first embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of a conductive wire according to a second embodiment of the present invention;
FIG. 3 is a schematic view of a wire manufacturing apparatus according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a lead manufacturing process according to an embodiment of the present invention;
wherein; 100. single-core silver-plated copper wire; 101. a wire core; 102. an atomic transition layer; 103. a silver-plated conductive layer; 104. a nano insulating layer; 105. a protective layer;
200. twisting and plying the silver-plated wire; 201. a wire core; 202. an atomic transition layer; 203. a silver-plated conductive layer; 204. a nano insulating layer; 205. a protective layer;
1. an unwinding system; 2. a pay-off position; 3. an unwinding mechanism; 4. a vacuum pumping system; 5. a plasma microetching system; 6. an atomic transition layer growth system; 7. a plasma deposition system; 8. a plasma deposition system; 9. a plasma deposition system; 10. a ply twist system; 11. coating a protective layer system; 12. a wire; 13. a wire wheel; 14. a twisting system; 15. a winding system; 16. a vacuum pumping system; 17. a vacuum pumping system; 18. and (4) a vacuum pumping system.
Detailed Description
For the purpose of illustrating the technical content, the constructional features, the achieved objects and the effects of the invention in detail, reference will be made to the following detailed description of the embodiments in conjunction with the accompanying drawings.
Embodiment I Single-core silver-plated copper conductor and manufacturing process thereof
As shown in fig. 1, which shows a schematic cross-sectional view of a manufactured single-core silver-plated copper conductor 100, a core 101 in the middle of the conductor is a single copper conductor, an atomic transition layer 102, a plasma deposition silver-plated conductive layer 103 and a nano-insulation layer 104 are micro-etched and grown on the surface of the core 101 by plasma, and then the core enters a single-wire or multi-wire conductor twisting and stranding system, and a product protective layer 105 is continuously coated on the surface of the conductor. The wire core 101 is a copper core wire with a wire diameter of 0.28mm, the atomic transition layer 102 is made of nickel and has a thickness of 10nm, the silver-plated conductive layer 103 is made of 3um, the nano insulating layer 104 is made of aluminum oxide and has a thickness of 80nm, and the protective layer 105 is made of Fluoroplastic (FEP) and has a thickness of 250 um.
As will be described below with reference to fig. 3 and 4, the single-core silver-plated copper conductor 100 is manufactured in the apparatus shown in fig. 3 according to the manufacturing flow shown in fig. 4: the prepared single copper core wire wheel with 0.28mm is placed at a corresponding paying-off position 2 in an unreeling system 1 of fig. 3, a wire is led out and enters a plasma micro-etching system 5 by using an unreeling mechanism 3 according to process requirements, then the wire is led into an atomic transition layer growing system 6, plasma micro-etching and atomic transition layer growing on the surface of the core wire are sequentially completed, the surface-treated core wire is further led into a plasma deposition system 7, a plasma deposition system 8 and a plasma deposition system 9 to complete a plasma deposition film forming process of a silver-plated conducting layer and a nano insulating layer, the core wire of the silver-plated conducting layer is led into a coating protective layer system 11 in a partition mode to form a coating protective layer, and then a silver-plated wire 12 is further fed into a reeling mechanism 15 and reeled onto a reel 13 with specified specifications. The method comprises the following specific steps:
The first step is as follows: after the system lead is completed under the normal pressure condition, starting the vacuum pumping systems 4, 16, 17 and 18 to enable the vacuum degree of the system to reach the design indication, starting to continuously route and start the plasma micro-etching system 5 corresponding to the core surface micro-etching, wherein the micro-etching gas adopts argon and nitrogen, and enters the plasma micro-etching system 5 as a plasma etching ion source according to the ratio of 9:1 so as to realize the plasma micro-etching on the core surface by utilizing the argon ions and the nitrogen ions, and the etching depth is 5 nm.
The second step is that: in the atom transition layer growth system 6, a direct current cyclotron magnetron sputtering deposition process is used for uniformly depositing and growing a nickel atom transition layer with the thickness of 10nm on the surface of the wire core subjected to plasma micro etching, and further depositing a silver-plated conducting layer in a plasma deposition system 7 and a plasma deposition system 8; in the embodiment, a high-speed deposition combination mode of medium-frequency variable magnetron sputtering silver plating and multi-arc magnetic filtration is adopted, so that a high-flexibility and compact silver-plated conducting layer can be obtained, and the thickness of the deposited silver-plated conducting layer is 3 microns;
the third step: and continuously sputtering an aluminum oxide target in the plasma deposition system 9 by using a radio frequency cyclotron magnetron sputtering deposition process to deposit an aluminum oxide nano insulating layer, wherein the thickness of the deposited aluminum oxide nano insulating layer is 80 nm.
The fourth step: the silver-plated wire with the deposited nickel atom transition layer, the deposited silver-plated conducting layer and the deposited aluminum oxide nano insulating layer is introduced into a protective layer coating system 11, Fluoroplastic (FEP) is coated, a protective layer is formed after continuous curing, the thickness of the protective layer is 250 micrometers, the silver-plated wire 12 is continuously sent into a winding system 15 and wound into a wire wheel 13, and the wire is automatically wound, is switched to the atmosphere and then is taken out to complete the manufacturing of the silver-plated wire. The product can improve the current transmission capability of high-power medium-high frequency wires or cables and reduce the heat generation and the path loss during high-frequency transmission.
Example II, twisting and stranding 7 copper wire cores and silver-plated wire and manufacturing process thereof
As shown in fig. 2, which is a schematic cross-sectional view of a twisted and stranded silver-plated wire 200 with 7 copper wire cores, a wire core in the wire 200 is formed by 7 single copper wires 201 with a wire diameter of 10um, and the deposition of a nickel atom transition layer 202, a silver-plated conductive layer 203 and an aluminum oxide nano insulating layer 204 on the surface of the single wire core is completed by the first step to the third step in the first embodiment. The outer sides of the 7 wire cores which are deposited and plated with the nickel atom transition layer 202, the silver conducting layer 203 and the aluminum oxide nanometer insulating layer 204 are coated with a protective layer 205.
And further putting 7 wire cores with nickel atom transition layers, silver-plated conducting layers and aluminum oxide nanometer insulating layers deposited on all the wire cores in a stranding and twisting system 10, starting a twisting system 14 to twist and shape the silver-plated wire 12, then putting the wire cores into a protective layer coating system 11, coating Fluoroplastic (FEP) on the surface of the stranded twisted and shaped wire, continuously curing to form a protective layer with the thickness of 5 microns, rolling the silver-plated wire 12 into a wire wheel 13 of a rolling system 15, automatically changing the roll, switching to the atmosphere, and taking out the wire to finish the manufacturing of the silver-plated wire. The process can be used for manufacturing a multi-strand superfine silver-plated wire, and solves the problems that the traditional silver-plated wire is light in bottleneck transmission of a superfine high-frequency signal transmission line and an effective method for realizing micrometer-sized wiring space is realized.
Third embodiment, silver-plated copper flat wire lead and manufacturing process thereof
In the embodiment, the wire core is preferably a single flat copper wire with the thickness of 10um and the width of 1.25mm, and the nickel atom transition layer, the silver-plated conducting layer and the aluminum oxide nanometer insulating layer are deposited on the surface of the single wire core through the first step to the third step in the first embodiment.
Further in getting into coating protective layer system 11 with the sinle silk, at flat wire surface coating Fluoroplastics (FEP), form the protective layer after the continuous curing, protective layer thickness is 100um to in rolling up silvering flat conductor 12 to the line wheel 13 of rolling system 15, and take out the preparation of accomplishing silvering flat conductor after switching to the atmosphere after the automatic change of book. The process can be used for manufacturing the high-power and high-frequency signal silver-plated transmission line, solves the manufacturing bottleneck of the traditional silver-plated transmission line on the high-frequency signal transmission flat line, realizes light weight of the transmission lead and efficient utilization of wiring space, and can realize the high power and miniaturization of electronic components
Fourth embodiment Single-core silver-plated optical fiber lead and manufacturing process thereof
The following describes the manufacturing process of the single-core silver-plated optical fiber wire: the prepared single bare fiber core wire wheel with the diameter of 125um is placed at a corresponding wire releasing position 2 in an unreeling system 1 of figure 3, a wire is led out and enters a plasma micro-etching system 5 by using an unreeling mechanism 3 in figure 3 according to process requirements, then the bare fiber core wire wheel is led into an atom transition layer growing system 6 to complete plasma micro-etching on the surface of the core wire and grow an atom transition layer, the surface-treated core wire is further led into a plasma deposition system 7, plasma deposition film forming processes of a silver-plated conducting layer and a nano insulating layer are completed in a plasma deposition system 8 and a plasma deposition system 9, the partition leading of the wire core of the silver-plated conducting layer into a protective layer coating system 11 is completed, and the silver-plated optical fiber wire 12 is further wound on a wire wheel 13 with a specified specification in a winding system 15. The method comprises the following specific steps:
The first step is as follows: after the system lead is finished under normal pressure, starting the vacuum pumping systems 4,16,17 and 18 to enable the vacuum degree of the system to reach the design indication, starting continuous wiring and starting a plasma micro-etching system 5 for micro-etching the surface of the corresponding wire core, wherein the micro-etching gas adopts CF4,H2,O2The fluorine ions enter a plasma micro-etching system 5 as a plasma etching ion source according to the ratio of 7:2:1, wherein the fluorine ions are used for carrying out plasma micro-etching on the surface of the optical fiber core wire, and the etching depth is 10 nm.
The second step: in the atom transition layer growth system 6, the direct current cyclotron magnetron sputtering deposition process is used for uniformly depositing and growing a silicon and nickel composite atom transition layer with the thickness of 30nm on the surface of a wire core, and further the deposition of a silver-plated conducting layer is completed in a plasma deposition system 7 and a plasma deposition system 8.
The third step: in the plasma deposition system 9, a ZrC nano insulating layer is deposited by sputtering a ZrC target by using a radio frequency cyclotron magnetron sputtering deposition process, and the thickness of the deposited ZrC nano insulating layer is 100 nm.
The fourth step: the silver-plated optical fiber lead which is deposited with the nickel composite atomic transition layer, the silver-plated conducting layer and the ZrC nano insulating layer is introduced into a protective layer coating system 11, acrylic ester UV glue is coated and continuously ultraviolet-cured to form a protective layer, the thickness of the protective layer is 1.5 microns, the silver-plated optical fiber lead 12 is wound into a wire wheel 13 of a winding system 15, and the silver-plated optical fiber lead is taken out after being automatically wound and switched to the atmosphere after being automatically wound, so that the manufacturing of the silver-plated optical fiber lead is completed. The conductive composite optical fiber can realize synchronous transmission of optical signals and electric high-frequency signals and realize signal transmission on one optical fiber or stranded optical cable.
Fifth embodiment, a carbon fiber bundle silver-plated wire and a manufacturing process thereof
The following describes the manufacturing process of the silver-plated wire of 3000K × 6um carbon fiber bundle: placing carbon fiber bundles at a corresponding pay-off position 2 in an unreeling system 1 of fig. 3, completing partition lead wire leading and entering a plasma micro-etching system 5 by using an unreeling mechanism 3 in the equipment of fig. 4 according to process requirements, then leading the carbon fiber bundles into an atom transition layer growth system 6, completing plasma micro-etching on the surface of a core wire and growing an atom transition layer, further leading the surface-treated core wire into plasma deposition systems 7,8 and 9 to complete a plasma deposition film-forming process of a silver-plated conducting layer and a nano insulating layer, completing partition leading of the core wire of the silver-plated conducting layer into a protective layer coating system 11, and further reeling the silver-plated carbon fiber bundle conductor 12 onto a reel 13 of a reeling system 15 with a specified specification. The method comprises the following specific steps:
the first step is as follows: after the system lead is finished under the normal pressure condition, starting the vacuum pumping systems 4,16,17 and 18 to enable the vacuum degree of the system to reach the design index, starting to continuously route and start the plasma micro-etching system 5 for micro-etching the surface of the corresponding wire core, wherein the micro-etching gas adopts Ar and H2 and enters the plasma micro-etching system 5 as a plasma etching ion source according to the ratio of 9: 1; wherein argon ions are used for carrying out plasma micro-etching on the surface of the carbon fiber bundle core wire, and the etching depth is 5 nm.
The second step is that: in the atom transition layer growth system 6, a medium-frequency variable magnetron sputtering deposition process is adopted, a silicon atom transition layer with the thickness of 20nm is uniformly deposited and grown on the surface of the carbon fiber bundle wire core, and the deposition of the silver-plated conducting layer is further completed in a plasma deposition system 7 and a plasma deposition system 8.
The third step: in the plasma deposition system 9, Al is sequentially sputtered by using a radio frequency cyclotron magnetron sputtering deposition process2O3And an AlN target to deposit an 80nm nano aluminum oxide film and a 60nm aluminum nitride insulating film to form a nano insulating layer composed of a single layer of the 80nm nano aluminum oxide film and a single layer of the 60nm aluminum nitride insulating film and having a total deposition thickness of 140 nm.
The fourth step: the silver-plated carbon fiber bundle lead wire with the finished silver-plated conducting layer and the nanometer insulating layer is introduced into a protective layer coating system 11 in a partition mode, acrylic ester UV glue is coated, continuous ultraviolet curing is carried out to form a protective layer, the thickness of the protective layer is 0.5um, the silver-plated carbon fiber bundle lead wire 12 is wound into a wire wheel 13 of a winding mechanism 15, the wire wheel is switched to the atmosphere after automatic coil changing, and then the wire is taken out to finish manufacturing of the silver-plated carbon fiber bundle lead wire. The silver-plated carbon fiber bundle conductor can be used for manufacturing a high-frequency signal transmission cable with light weight and ultrahigh strength, and is an upgrading and updating of a solid-line traditional copper signal cable.
Sixth embodiment, silver-plated twisted nylon monofilament conductor and manufacturing process thereof
The manufacturing process of twisting the nylon monofilament silver-plated wire is described as follows: the prepared twisted nylon monofilament core wheel with the wire diameter of 200 mu m is placed at a corresponding pay-off position 2 in an unreeling system 1 of a reeling system 3, a lead and a multi-wire division area are completed by an unreeling mechanism 3 in the equipment of the reeling system 3 according to process requirements and enter a plasma micro-etching system 5, then the core wheel is introduced into an atom transition layer growth system 6 to complete plasma micro-etching on the surface of the core wheel and grow an atom transition layer, the core wheel after surface treatment is further introduced into plasma deposition systems 7, 8 and 9 to complete a plasma deposition film forming process of a silver-plated conducting layer and a nano insulating layer, the core wheel division of the silver-plated conducting layer is introduced into a coating protective layer system 11 to coat a protective layer, and then the silver-plated conducting wire 12 is further reeled on a reel 13 of a reeling system 15 with specified specification. The method comprises the following specific steps:
the first step is as follows: after the system lead is finished under the normal pressure condition, starting the vacuum pumping systems 4, 16, 17 and 18 to enable the vacuum degree of the system to reach the design indication, starting to continuously route and start the plasma micro-etching system 5 for micro-etching the surface of the corresponding wire core, wherein the micro-etching gas adopts CF 4And H2The plasma etching ion source enters a plasma micro-etching system 5 according to the proportion of 8:2 to be used as a plasma etching ion source; wherein, fluorine ions are used for carrying out plasma micro-etching on the surface of the twisted nylon monofilament, and the etching depth is 10 nm.
The second step: in the atom transition layer growth system 6, a direct current rotary magnetron sputtering deposition process is used, a copper atom transition layer with the thickness of 30nm is uniformly deposited and grown on the surface of the twisted nylon monofilament, and deposition of a silver-plated conducting layer is further completed in a plasma deposition system 7 and a plasma deposition system 8.
The third step: in the plasma deposition system 9, an alumina nano insulating layer is deposited by sputtering an alumina target by using a radio frequency cyclotron magnetron sputtering deposition process, and the thickness of the deposited alumina nano insulating layer is 200 nm.
The fourth step: the silver-plated conducting wire with the finished silver-plated conducting layer and the aluminum oxide nano insulating layer is introduced into a protective layer coating system 11, acrylic ester UV glue is coated, a protective layer with the thickness of 1um is formed through ultraviolet curing, the silver-plated twisted nylon monofilament conducting wire 12 is wound into a wire wheel 13 of a winding system, and the silver-plated twisted nylon monofilament conducting wire is taken out after being automatically changed to the atmosphere and is manufactured. The lead can be widely applied to high-frequency signal transmission lines in intelligent wearable textiles or flexible composite materials.
The above embodiments are merely illustrative of the technical ideas and features of the present invention, and the purpose thereof is to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and not to limit the protection scope of the present invention. All equivalent changes and modifications made according to the spirit of the present invention should be covered within the protection scope of the present invention.
Claims (10)
1. A manufacturing method of a silver-plated wire is characterized by comprising the following steps: micro-etching the surface of the wire core by using at least one plasma etching ion source; depositing at least one first material by a magnetron sputtering deposition method to form an atomic transition layer on the surface of the core subjected to the micro etching; depositing a silver material by a plasma vapor deposition method to form a silver-plated conducting layer on the surface of the atomic transition layer; depositing at least one second material by a plasma vapor deposition method to form a nano insulating layer on the surface of the silver-plated conducting layer; and continuously coating at least one third material under a vacuum condition to form a protective layer on the surface of a single wire or a plurality of wires after the nano insulating layer is deposited and twisted and plied.
2. The method according to claim 1, characterized in that the wire core of which the wire is made of a conductive or non-conductive material; wherein, the conductor material is at least one of copper, aluminum, nickel, titanium and tungsten; the non-conductor material is at least one of quartz, carbon fiber, basalt fiber, glass fiber and chemical filament fiber.
3. The method of claim 1, wherein the wire core is comprised of a single or a plurality of wires or a single or a plurality of tapes; wherein, the line footpath of wire rod is 4um to 500um, the thickness of strip is 5um to 250um, width 1mm to 10 mm.
4. The method of claim 1, wherein the at least one plasma etching ion source comprises at least one plasma of argon, fluorine, chlorine, and oxygen.
5. The method of claim 1, wherein the micro-etching has an etch depth of 10nm to 50 nm.
6. The method of claim 1, wherein depositing the at least one first material comprises depositing at least one of nickel, chromium, molybdenum, tungsten, and copper by a magnetron sputtering process, the atomic transition layer being formed to a thickness of 1nm to 5 μ ι η.
7. The method according to claim 1, wherein the silver material is deposited by a plasma vapor deposition method to form the silver-plated conductive layer having a thickness of 10nm to 5 μm on the surface of the atomic transition layer.
8. The method of claim 1, wherein depositing the at least one second material comprises depositing at least one of a metal oxide, a metal nitride, and a metal carbide with a plasma vapor deposition process; wherein the metal oxide comprises at least one of silicon oxide, aluminum oxide and zirconium oxide, the metal nitride comprises at least one of aluminum nitride, silicon nitride and titanium nitride, and the metal carbide comprises at least one of titanium carbide, silicon carbide and zirconium carbide.
9. The method according to claim 1 or 8, wherein the nano insulating layer comprises at least one insulating film, the thickness of a single insulating film is 1nm to 50nm, and the total number of insulating film layers is 2 to 20.
10. The method of claim 1, wherein continuously coating the at least one third material under vacuum comprises continuously coating at least one of fluoroplastic, silicone rubber, nylon, polyvinyl chloride, and UV glue.
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